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Stimulated down-conversion of single-photon emission in a quantum dot placed in a target-frequency microcavity
Authors:
I. V. Krainov,
M. V. Rakhlin,
A. I. Veretennikov,
T. V. Shubina
Abstract:
Currently, two optical processes are mainly used to realize single photon sources: deterministic transitions in a semiconductor quantum dot (QD) placed in a microcavity and spontaneous frequency down-conversion in materials with intrinsic nonlinearity. In this work, we consider another approach that combines the advantages of both, such as high power with on-demand generation from QDs and the poss…
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Currently, two optical processes are mainly used to realize single photon sources: deterministic transitions in a semiconductor quantum dot (QD) placed in a microcavity and spontaneous frequency down-conversion in materials with intrinsic nonlinearity. In this work, we consider another approach that combines the advantages of both, such as high power with on-demand generation from QDs and the possibility of frequency tuning from nonlinear sources. For this purpose, we use stimulated frequency down-conversion occurring directly in the QD inside a microcavity designed not to the exciton frequency in the QD but to the target single photon frequency, which is set by the difference between the exciton resonance and the stimulating laser energies. This down-conversion arises from the second-order nonlinear interaction of an exciton (bright heavy-hole or dark) and a light-hole exciton in the stimulating laser field. We present an analytical model for such a down-conversion process and evaluate its efficiency for a widely sought-after single photon source for the telecom C-band (1530-1565 nm). We show that the emission rate of down-converted single photons can approach MHz. At certain conditions, this process is comparable in efficiency to direct emission from an InAs/GaAs QD at 920 nm, which is outside the cavity mode.
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Submitted 28 November, 2024;
originally announced November 2024.
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Hidden anisotropy controls spin-photon entanglement in a charged quantum dot
Authors:
Yuriy Serov,
Aidar Galimov,
Dmitry S. Smirnov,
Maxim Rakhlin,
Nikita Leppenen,
Grigorii Klimko,
Sergey Sorokin,
Irina Sedova,
Daria Berezina,
Yuliya Salii,
Marina Kulagina,
Yuriy Zadiranov,
Sergey Troshkov,
Tatiana V. Shubina,
Alexey Toropov
Abstract:
Photon entanglement is indispensable for optical quantum technologies. Measurement-based optical quantum computing and all-optical quantum networks rely on multiphoton cluster states consisting of indistinguishable entangled photons. A promising method for creating such cluster states on demand is spin-photon entanglement using the spin of a resident charge carrier in a quantum dot, precessing in…
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Photon entanglement is indispensable for optical quantum technologies. Measurement-based optical quantum computing and all-optical quantum networks rely on multiphoton cluster states consisting of indistinguishable entangled photons. A promising method for creating such cluster states on demand is spin-photon entanglement using the spin of a resident charge carrier in a quantum dot, precessing in a weak external magnetic field. In this work, we show theoretically and experimentally that spin-photon entanglement is strongly affected by the hidden anisotropy of quantum dots, which can arise from mechanical stress, shape anisotropy and even specific crystal structure. In the measurements of time-resolved photoluminescence and cross-polarized second-order photon correlation function in a magnetic field, the anisotropy manifests itself in the spin dynamics and, as a consequence, in the spin-photon concurrence. The measured time-filtered spin-photon Bell state fidelity depends strongly on the excitation polarization and reaches an extremely high value of 94% at maximum. We specify the magnetic field and excitation polarization directions that maximize spin-photon entanglement and thereby enhance the fidelity of multiphoton entangled states.
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Submitted 3 October, 2024;
originally announced October 2024.
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Direct observation of split-mode exciton-polaritons in a single MoS$_2$ nanotube
Authors:
A. I. Galimov,
D. R. Kazanov,
A. V. Poshakinskiy,
M. V. Rakhlin,
I. A. Eliseyev,
A. A. Toropov,
M. Remskar,
T. V. Shubina
Abstract:
A single nanotube synthesized from a transition metal dichalcogenide (TMDC) exhibits strong exciton resonances and, in addition, can support optical whispering gallery modes. This combination is promising for observing exciton-polaritons without an external cavity. However, traditional energy-momentum-resolved detection methods are unsuitable for this tiny object. Instead, we propose to use split…
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A single nanotube synthesized from a transition metal dichalcogenide (TMDC) exhibits strong exciton resonances and, in addition, can support optical whispering gallery modes. This combination is promising for observing exciton-polaritons without an external cavity. However, traditional energy-momentum-resolved detection methods are unsuitable for this tiny object. Instead, we propose to use split optical modes in a twisted nanotube with the flattened cross-section, where a gradually decreasing gap between the opposite walls leads to a change in mode energy, similar to the effect of the barrier width on the eigenenergies in the double-well potential. Using micro-reflectance spectroscopy, we investigated the rich pattern of polariton branches in single MoS$_2$ tubes with both variable and constant gaps. Observed Rabi splitting in the 40 - 60 meV range is comparable to that for a MoS$_2$ monolayer in a microcavity. Our results, based on the polariton dispersion measurements and polariton dynamics analysis, present a single TMDC nanotube as a perfect polaritonic structure for nanophotonics.
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Submitted 15 January, 2024; v1 submitted 30 December, 2023;
originally announced January 2024.
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Indirect-to-direct bandgap transition in few-layer $β$-InSe as probed by photoluminescence spectroscopy
Authors:
Bogdan R. Borodin,
Ilya A. Eliseyev,
Aidar I. Galimov,
Lyubov V. Kotova,
Mikhail V. Durnev,
Tatiana V. Shubina,
Maxim V. Rakhlin
Abstract:
InSe is a promising material for a next-generation of two-dimensional electronic and optical devices, characteristics of which are largely determined by the type of band structure, direct or indirect. In general, different methods can be sensitive to different peculiarities of the electronic structure leading to different results. In this work, we will focus on the luminescent properties of few-la…
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InSe is a promising material for a next-generation of two-dimensional electronic and optical devices, characteristics of which are largely determined by the type of band structure, direct or indirect. In general, different methods can be sensitive to different peculiarities of the electronic structure leading to different results. In this work, we will focus on the luminescent properties of few-layer $β$-InSe with a thickness of 6 to 75 monolayers (ML). Low-temperature micro-photoluminescence ($mu$-PL) studies show a sharp increase in PL intensity in the range of thicknesses from 16 to 20 monolayers, where, in addition, there is a singularity in the dependence of the work function on the thickness. Time-resolved photoluminescence spectroscopy (TRPL) reveals three characteristic PL decay times that differ from each other by about an order of magnitude. We associate the processes underlying the two faster decays with the recombination of electrons and holes between the band extrema, either directly or through the interband relaxation of holes. Their contributions to the total PL intensity increase significantly in the same thickness range, 16-20 MLs. On the contrary, the slowest contribution, which we attribute mainly to the defect-assisted recombination, prevails at a smaller number of monolayers and then noticeably decreases. These results indicate the indirect-to-direct bandgap transition near 16-20 MLs, which determines the range of applicability of a few-layer $β$-InSe for efficient light emitters.
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Submitted 27 August, 2023;
originally announced August 2023.
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Twisted Nanotubes of Transition Metal Dichalcogenides with Split Optical Modes for Tunable Radiated Light Resonators
Authors:
Ilya A. Eliseyev,
Bogdan R. Borodin,
Dmitrii R. Kazanov,
Alexander V. Poshakinskiy,
Maja Remškar,
Sergey I. Pavlov,
Lyubov V. Kotova,
Prokhor A. Alekseev,
Alexey V. Platonov,
Valery Yu. Davydov,
Tatiana V. Shubina
Abstract:
Synthesized micro- and nanotubes composed of transition metal dichalcogenides (TMDCs) such as MoS$_2$ are promising for many applications in nanophotonics, because they combine the abilities to emit strong exciton luminescence and to act as whispering gallery microcavities even at room temperature. In addition to tubes in the form of hollow cylinders, there is an insufficiently-studied class of tw…
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Synthesized micro- and nanotubes composed of transition metal dichalcogenides (TMDCs) such as MoS$_2$ are promising for many applications in nanophotonics, because they combine the abilities to emit strong exciton luminescence and to act as whispering gallery microcavities even at room temperature. In addition to tubes in the form of hollow cylinders, there is an insufficiently-studied class of twisted tubes, the flattened cross section of which rotates along the tube axis. As shown by theoretical analysis, in such nanotubes the interaction of electromagnetic waves excited at opposite sides of the cross section can cause splitting of the whispering gallery modes. By studying micro-photoluminescence spectra measured along individual MoS$_2$ tubes, it has been established that the splitting value, which controls the energies of the split modes, depends exponentially on the aspect ratio of the cross section, which varies in "breathing" tubes, while the relative intensity of the modes in a pair is determined by the angle of rotation of the cross section. These results open up the possibility of creating multifunctional tubular TMDC nanodevices that provide resonant amplification of self-emitting light at adjustable frequencies.
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Submitted 9 December, 2022;
originally announced December 2022.
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Demultiplexed Single-Photon Source with a Quantum Dot Coupled to Microresonator
Authors:
M. V. Rakhlin,
A. I. Galimov,
I. V. Dyakonov,
N. N. Skryabin,
G. V. Klimko,
M. M. Kulagina,
Yu. M. Zadiranov,
S. V. Sorokin,
I. V. Sedova,
Yu. A. Guseva,
D. S. Berezina,
Yu. M. Serov,
N. A. Maleev,
A. G. Kuzmenkov,
S. I. Troshkov,
K. V. Taratorin,
A. K. Skalkin,
S. S. Straupe,
S. P. Kulik,
T. V. Shubina,
A. A. Toropov
Abstract:
The characteristics of a single-photon emitter based on a semiconductor quantum dot, such as their indistinguishability and brightness, depend on the stability of the recombination channel, which can switch spontaneously between exciton and trion. We show that dominant recombination through neutral exciton states can be achieved by careful control of the doping profile near an epitaxial InAs/GaAs…
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The characteristics of a single-photon emitter based on a semiconductor quantum dot, such as their indistinguishability and brightness, depend on the stability of the recombination channel, which can switch spontaneously between exciton and trion. We show that dominant recombination through neutral exciton states can be achieved by careful control of the doping profile near an epitaxial InAs/GaAs quantum dot placed in a columnar microcavity with distributed Bragg reflectors. The Hong-Ou-Mandel experiments carried out in the fabricated device demonstrate the degree of indistinguishability of 91% of successively emitted single photons within 242 ns at an efficiency of 10% inside a single-mode optical fiber. The achieved brightness made it possible to implement spatio-temporal demultiplexing of photons in six independent spatial modes with an in-fiber generation frequency of more than 0.1 Hz.
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Submitted 8 November, 2022;
originally announced November 2022.
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Photoluminescence kinetics of dark and bright excitons in atomically thin MoS$_2$
Authors:
Ilya A. Eliseyev,
Aidar I. Galimov,
Maxim. V. Rakhlin,
Evgenii A. Evropeitsev,
Alexey A. Toropov,
Valery Yu. Davydov,
Sebastian Thiele,
Jörg Pezoldt,
Tatiana V. Shubina
Abstract:
The fine structure of the exciton spectrum, containing optically allowed (bright) and forbidden (dark) exciton states, determines the radiation efficiency in nanostructures. We study time-resolved micro-photoluminescence in MoS$_2$ monolayers and bilayers, both unstrained and compressively strained, in a wide temperature range (10-300 K) to distinguish between exciton states optically allowed and…
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The fine structure of the exciton spectrum, containing optically allowed (bright) and forbidden (dark) exciton states, determines the radiation efficiency in nanostructures. We study time-resolved micro-photoluminescence in MoS$_2$ monolayers and bilayers, both unstrained and compressively strained, in a wide temperature range (10-300 K) to distinguish between exciton states optically allowed and forbidden, both in spin and momentum, as well as to estimate their characteristic decay times and contributions to the total radiation intensity. The decay times were found to either increase or decrease with increasing temperature, indicating the lowest bright or lowest dark state, respectively. Our results unambiguously show that, in an unstrained monolayer, the spin-allowed state is the lowest for a series of A excitons (1.9 eV) with the dark state being < 2 meV higher, and that the splitting energy can increase several times at compression. In contrast, in the indirect exciton series in bilayers (1.5 eV), the spin-forbidden state is the lowest, being about 3 meV below the bright one. The strong effect of strain on the exciton spectrum can explain the large scatter among the published data and must be taken into account to realize the desired optical properties of 2D MoS$_2$.
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Submitted 3 August, 2021; v1 submitted 17 May, 2021;
originally announced May 2021.
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MoS$_2$ flake as a van der Waals homostructure: luminescence properties and optical anisotropy
Authors:
Lyubov V. Kotova,
Maxim V. Rakhlin,
Aidar I. Galimov,
Ilya A. Eliseyev,
Bogdan R. Borodin,
Alexey V. Platonov,
Demid A. Kirilenko,
Alexander V. Poshakinskiy,
Tatiana V. Shubina
Abstract:
We investigated multilayer plates made by exfoliation from a high-quality MoS$_2$ crystal and reveal that they represent a new object - van der Waals homostructure consisting of a bulk core and a few detached monolayers on its surface. This architecture comprising elements with different electron band structure leads to specific luminescence, when the broad emission band from the core is cut by th…
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We investigated multilayer plates made by exfoliation from a high-quality MoS$_2$ crystal and reveal that they represent a new object - van der Waals homostructure consisting of a bulk core and a few detached monolayers on its surface. This architecture comprising elements with different electron band structure leads to specific luminescence, when the broad emission band from the core is cut by the absorption peaks of strong exciton resonances in the surface monolayers. The exfoliated flakes exhibit strong optical anisotropy. We have observed a conversion of normally incident light polarization to $15\%$ in transmission geometry. This background effect is due to fluctuations of the c axis relative to the normal, whereas the pronounced resonance contribution is explained by the polarization anisotropy of excitons localized in the stripes of dissected surface monolayers.
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Submitted 30 August, 2021; v1 submitted 3 December, 2020;
originally announced December 2020.
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State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods
Authors:
E. A. Evropeitsev,
D. R. Kazanov,
Y. Robin,
A. N. Smirnov,
I. A. Eliseyev,
V. Yu. Davydov,
A. A. Toropov,
S. Nitta,
T. V. Shubina,
H. Amano
Abstract:
Core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) are promising for monolithic white light-emitting diodes and multicolor displays. Such applications, however, are still a challenge because intensity of red band is too weak as compared with blue and green ones. To clarify the problem, we have performed power and temperature dependent, as well as time-resolved measurements of photolumine…
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Core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) are promising for monolithic white light-emitting diodes and multicolor displays. Such applications, however, are still a challenge because intensity of red band is too weak as compared with blue and green ones. To clarify the problem, we have performed power and temperature dependent, as well as time-resolved measurements of photoluminescence (PL) in NRs of different In content and diameter. These studies have shown that the dominant PL bands originate from nonpolar and semipolar QWs, while a broad yellow-red band arises mostly from defects in the GaN core. Intensity of red emission from the polar QWs at the NR tip is fatally small. Our calculation of electromagnetic field distribution inside the NRs shows a low density of photon states in the tip that suppresses the red radiation. We suggest a design of hybrid NRs, in which polar QWs, located inside the GaN core, are pumped by UV-blue radiation of nonpolar QWs. Possibilities of radiative recombination rate enhancement by means of the Purcell effect are discussed.
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Submitted 10 March, 2020;
originally announced March 2020.
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Towards exciton-polaritons in MoS$_2$ nanotubes
Authors:
D. R. Kazanov,
M. V. Rakhlin,
K. G. Belyaev,
A. V. Poshakinskiy,
T. V. Shubina
Abstract:
We measure low-temperature micro-photoluminescence spectra along a MoS$_2$ nanotube, which exhibit the peaks of the optical whispering gallery modes below the exciton resonance. The variation of the position and intensity of these peaks is used to quantify the change of the nanotube geometry. The width of the peaks is shown to be determined by the fluctuations of the nanotube wall thickness and pr…
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We measure low-temperature micro-photoluminescence spectra along a MoS$_2$ nanotube, which exhibit the peaks of the optical whispering gallery modes below the exciton resonance. The variation of the position and intensity of these peaks is used to quantify the change of the nanotube geometry. The width of the peaks is shown to be determined by the fluctuations of the nanotube wall thickness and propagation of the detected optical modes along the nanotube. We analyse the dependence of the energies of the optical modes on the wave vector along the nanotube axis and demonstrate the potential of the high-quality nanotubes for realization of the strong coupling between exciton and optical modes with the Rabi splitting reaching 400 meV. We show how the formation of exciton-polaritons in such structures will be manifested in the micro-photoluminescence spectra.
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Submitted 18 June, 2019;
originally announced June 2019.
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InSe as a case between 3D and 2D layered crystals for excitons
Authors:
W. Desrat,
T. V. Shubina,
M. Moret,
A. Tiberj,
O. Briot,
B. Gil
Abstract:
We demonstrate the successive appearance of the exciton, biexciton, and P band of the exciton-exciton scattering with increasing excitation power in the photoluminescence of indium selenide layered crystals. The strict energy and momentum conservation rules of the P band are used to reexamine the exciton binding energy. The new value $\geq 20$ meV is markedly higher than the currently accepted 14…
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We demonstrate the successive appearance of the exciton, biexciton, and P band of the exciton-exciton scattering with increasing excitation power in the photoluminescence of indium selenide layered crystals. The strict energy and momentum conservation rules of the P band are used to reexamine the exciton binding energy. The new value $\geq 20$ meV is markedly higher than the currently accepted 14 meV, being however well consistent with the robustness of excitons up to room temperature. A peak controlled by the Sommerfeld factor is found near the bandgap ($\sim 1.36$ eV), which puts the question on the pure three-dimensional character of the exciton in InSe, which has been assumed up to now. Our findings are of paramount importance for the successful application of InSe in nanophotonics.
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Submitted 31 March, 2019;
originally announced April 2019.
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Excitonic emission in van-der-Waals nanotubes of transition metal dichalcogenides
Authors:
T. V. Shubina,
M. Remškar,
V. Yu. Davydov,
K. G. Belyaev,
A. A. Toropov,
B. Gil
Abstract:
Nanotubes (NTs) of transition metal dichalcogenides (TMDs), such as MoS2 and WS2, were first synthesized more than a quarter of a century ago; nevertheless, many of their properties have so far remained basically unknown. This review presents the state of the art in the knowledge of the optical properties of TMD NTs. We first evaluate general properties of multilayered TMD crystals, and analyze av…
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Nanotubes (NTs) of transition metal dichalcogenides (TMDs), such as MoS2 and WS2, were first synthesized more than a quarter of a century ago; nevertheless, many of their properties have so far remained basically unknown. This review presents the state of the art in the knowledge of the optical properties of TMD NTs. We first evaluate general properties of multilayered TMD crystals, and analyze available data on electronic band structure and optical properties of related NTs. Then, the technology for the formation and the structural characteristics of TMD NTs are represented, focusing on the structures synthesized by chemical transport reaction. The core of this work is the presentation of the ability of TMD NTs to emit bright photoluminescence (PL), which has been discovered recently. By means of micro-PL spectroscopy of individual tubes we show that excitonic transitions relevant to both direct and indirect band gaps contribute to the emission spectra of the NTs despite the presence of dozens of monolayers in their walls. We highlight the performance of the tubes as efficient optical resonators, whose confined optical modes strongly affect the emission bands. Finally, a brief conclusion is presented, along with an outlook of the future studies of this novel member of the family of radiative NTs, which have unique potential for different nanophotonics applications.
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Submitted 6 December, 2018; v1 submitted 3 November, 2018;
originally announced November 2018.
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Multiwall nanotubes of molybdenum disulfide as optical resonators
Authors:
D. R. Kazanov,
A. V. Poshakinskiy,
V. Yu. Davydov,
A. N. Smirnov,
D. A. Kirilenko,
M. Remškar,
S. Fathipour,
A. Mintairov,
A. Seabaugh,
B. Gil,
T. V. Shubina
Abstract:
We study the optical properties of MoS$_2$ nanotubes (NTs) with walls comprising dozens of monolayers. We reveal strong peaks in micro-photoluminescence ($μ$-PL) spectra when detecting the light polarized along the NT axis. We develop a model describing the optical properties of the nanotubes acting as optical resonators which support the quantization of whispering gallery modes inside the NT wall…
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We study the optical properties of MoS$_2$ nanotubes (NTs) with walls comprising dozens of monolayers. We reveal strong peaks in micro-photoluminescence ($μ$-PL) spectra when detecting the light polarized along the NT axis. We develop a model describing the optical properties of the nanotubes acting as optical resonators which support the quantization of whispering gallery modes inside the NT wall. The experimental observation of the resonances in $μ$-PL allows one to use them as a contactless method of the estimation of the wall width. Our findings open a way to use such NTs as polarization-sensitive components of nanophotonic devices.
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Submitted 4 July, 2018;
originally announced July 2018.
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Spectroscopic signatures of many-particle energy levels in non-covalently doped single-wall carbon nanotubes
Authors:
T. V. Eremin,
P. A. Obraztsov,
V. A. Velikanov,
T. V. Shubina,
E. D. Obraztsova
Abstract:
We report the first observation of an optical transition from a ground trion state T to excited trion state T* in (6,5) single-wall carbon nanotubes non-covalently doped with hydrochloric acid. The position of such an excited trion level T* is estimated as 2,12 eV, while the ground trion level T has an energy of 1,08 eV. Besides, pump-probe transient absorption spectroscopy indicates that the grou…
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We report the first observation of an optical transition from a ground trion state T to excited trion state T* in (6,5) single-wall carbon nanotubes non-covalently doped with hydrochloric acid. The position of such an excited trion level T* is estimated as 2,12 eV, while the ground trion level T has an energy of 1,08 eV. Besides, pump-probe transient absorption spectroscopy indicates that the ground trion level T cannot be excited directly. Instead, we propose that trions form after nonradioactive relaxation from excitons, dressed by interaction with doping induced hole-polarons. We also report a complete exciton-to-trion conversion by means of photoluminescence spectroscopy, thus supporting existence of the polaron-dressed exciton energy level in p-doped single-wall carbon nanotubes.
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Submitted 29 April, 2018;
originally announced May 2018.
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Optical activity in chiral stacks of 2D semiconductors
Authors:
Alexander V. Poshakinskiy,
Dmitrii R. Kazanov,
Tatiana V. Shubina,
Sergey A. Tarasenko
Abstract:
We show that the stacks of two-dimensional semiconductor crystals with the chiral packing exhibit optical activity and circular dichroism. We develop a microscopic theory of these phenomena in the spectral range of exciton transitions which takes into account the spin-dependent hopping of excitons between the layers in the stack and the interlayer coupling of excitons via electromagnetic field. Fo…
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We show that the stacks of two-dimensional semiconductor crystals with the chiral packing exhibit optical activity and circular dichroism. We develop a microscopic theory of these phenomena in the spectral range of exciton transitions which takes into account the spin-dependent hopping of excitons between the layers in the stack and the interlayer coupling of excitons via electromagnetic field. For the stacks of realistic two-dimensional semiconductors such as transition metal dichalcogenides, we calculate the rotation and ellipticity angles of radiation transmitted through such structures. The angles are resonantly enhanced at the frequencies of both bright and dark exciton modes in the stack. We also study the photoluminescence of chiral stacks and show that it is circularly polarized.
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Submitted 15 November, 2017;
originally announced November 2017.
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Resonant photonic crystals based on van der Waals heterostructures
Authors:
D. R. Kazanov,
A. V. Poshakinskiy,
T. V. Shubina
Abstract:
We propose to use 2D monolayers possessing optical gaps and high exciton oscillator strength as an element of one-dimensional resonant photonic crystals. We demonstrate that such systems are promising for the creation of effective and compact delay units. In the transition-metal-dichalcogenide-based structures where the frequencies of Bragg and exciton resonances are close, a propagating short pul…
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We propose to use 2D monolayers possessing optical gaps and high exciton oscillator strength as an element of one-dimensional resonant photonic crystals. We demonstrate that such systems are promising for the creation of effective and compact delay units. In the transition-metal-dichalcogenide-based structures where the frequencies of Bragg and exciton resonances are close, a propagating short pulse can be slowed down by few picoseconds while the pulse intensity decreases only 2 - 5 times. This is realized at the frequency of the "slow" mode situated within the stopband. The pulse retardation and attenuation can be controlled by detuning the Bragg frequency from the exciton resonance frequency.
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Submitted 24 July, 2017;
originally announced July 2017.
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III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to near infrared
Authors:
T. V. Shubina,
G. Pozina,
V. N. Jmerik,
V. Yu. Davydov,
C. Hemmingsson,
A. V. Andrianov,
D. R. Kazanov,
S. V. Ivanov
Abstract:
Rapidly developing nanophotonics needs microresonators for different spectral ranges, formed by chip-compatible technologies. In addition, the tunable ones are in greatest demand. Here, we present epitaxial site--controlled III--nitride cup--cavities which can operate from ultraviolet to near--infrared, supporting quasi whispering gallery modes up to room temperature. In these cavities, the refrac…
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Rapidly developing nanophotonics needs microresonators for different spectral ranges, formed by chip-compatible technologies. In addition, the tunable ones are in greatest demand. Here, we present epitaxial site--controlled III--nitride cup--cavities which can operate from ultraviolet to near--infrared, supporting quasi whispering gallery modes up to room temperature. In these cavities, the refractive index variation near an absorption edge causes the remarkable effect of mode switching, which is accompanied by the change of spatial intensity distribution, concentration of light efficiently into a subwavelength volume, and emission of terahertz photons. At a distance from the edge, the mode-related narrow emission lines have stable energies and widths at different temperatures. Moreover, their energies are identical in the large 'ripened' monocrystal cavities. Our results shed light on the mode behavior in the semiconductor cavities and open the way for single--growth--run manufacturing the devices comprising an active region and a cavity with tunable mode frequencies.
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Submitted 31 July, 2015;
originally announced July 2015.
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Excitonic parameters of GaN studied by time-of-flight spectroscopy
Authors:
T. V. Shubina,
A. A. Toropov,
G. Pozina,
J. P. Bergman,
M. M. Glazov,
N. A. Gippius,
P. Disseix,
J. Leymarie,
B. Gil,
B. Monemar
Abstract:
We refine excitonic parameters of bulk GaN by means of time-of-flight spectroscopy of light pulses propagating through crystals. The influence of elastic photon scattering is excluded by using the multiple reflections of the pulses from crystal boundaries. The shapes of these reflexes in the time-energy plane depict the variation of the group velocity induced by excitonic resonances. Modeling of t…
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We refine excitonic parameters of bulk GaN by means of time-of-flight spectroscopy of light pulses propagating through crystals. The influence of elastic photon scattering is excluded by using the multiple reflections of the pulses from crystal boundaries. The shapes of these reflexes in the time-energy plane depict the variation of the group velocity induced by excitonic resonances. Modeling of the shapes, as well as other spectra, shows that a homogeneous width of the order of 10 μeV characterizes the exciton-polariton resonances within the crystal. The oscillator strength of A and B exciton-polaritons is determined as 0.0022 and 0.0016, respectively.
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Submitted 14 April, 2011;
originally announced April 2011.
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Delay and distortion of slow light pulses by excitons in ZnO
Authors:
T. V. Shubina,
M. M. Glazov,
N. A. Gippius,
A. A. Toropov,
D. Lagarde,
P. Disseix,
J. Leymarie,
B. Gil,
G. Pozina,
J. P. Bergman,
B. Monemar
Abstract:
Light pulses propagating through ZnO undergo distortions caused by both bound and free excitons. Numerous lines of bound excitons dissect the pulse and induce slowing of light around them, to the extend dependent on their nature. Exciton-polariton resonances determine the overall pulse delay and attenuation. The delay time of the higher-energy edge of a strongly curved light stripe approaches 1.6…
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Light pulses propagating through ZnO undergo distortions caused by both bound and free excitons. Numerous lines of bound excitons dissect the pulse and induce slowing of light around them, to the extend dependent on their nature. Exciton-polariton resonances determine the overall pulse delay and attenuation. The delay time of the higher-energy edge of a strongly curved light stripe approaches 1.6 ns at 3.374 eV with a 0.3 mm propagation length. Modelling the data of cw and time-of-flight spectroscopies has enabled us to determine the excitonic parameters, inherent for bulk ZnO. We reveal the restrictions on these parameters induced by the light attenuation, as well as a discrepancy between the parameters characterizing the surface and internal regions of the crystal.
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Submitted 8 March, 2011;
originally announced March 2011.
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Terahertz radiation due to random grating coupled surface plasmon polaritons
Authors:
T. V. Shubina,
N. A. Gippius,
V. A. Shalygin,
A. V. Andrianov,
S. V. Ivanov
Abstract:
We report on terahertz (THz) radiation under electrical pumping from a degenerate semiconductor possessing an electron accumulation layer. In InN, the random grating formed by topographical defects provides high-efficiency coupling of surface plasmon polaritons supported by the accumulation layer to the THz emission. The principal emission band occupies the 2-6 THz spectral range. We establish a l…
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We report on terahertz (THz) radiation under electrical pumping from a degenerate semiconductor possessing an electron accumulation layer. In InN, the random grating formed by topographical defects provides high-efficiency coupling of surface plasmon polaritons supported by the accumulation layer to the THz emission. The principal emission band occupies the 2-6 THz spectral range. We establish a link between the shape of emission spectra and the structural factor of the random grating and show that the change of slope of power dependencies is characteristic for temperature-dependent plasmonic mechanisms. The super-linear rise of a THz emission intensity on applied electric power provides advantage of such materials in emission yield.
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Submitted 2 August, 2010;
originally announced August 2010.
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InN/In nanocomposites: Plasmonic effects and a hidden optical gap
Authors:
T. V. Shubina,
V. A. Kosobukin,
T. A. Komissarova,
V. N. Jmerik,
P. S. Kopev,
S. V. Ivanov,
A. Vasson,
J. Leymarie,
N. A. Gippius,
T. Araki,
T. Akagi,
Y. Nanishi
Abstract:
InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, be…
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InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, being strongly suggestive of plasmon-dominated emission and absorption, are discussed in terms of electromagnetic enhancement taking into account the In parallel-band transitions.
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Submitted 27 June, 2008;
originally announced June 2008.
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InN/In nanocomposites: Evidences of plasmonic effects and hidden gap
Authors:
T. V. Shubina,
V. A. Kosobukin,
T. A. Komissarova,
V. N. Jmerik,
P. S. Kopev,
S. V. Ivanov,
A. Vasson,
J. Leymarie,
N. A. Gippius,
T. Araki,
T. Akagi,
Y. Nanishi
Abstract:
InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, be…
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InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, being strongly suggestive of plasmon-dominated emission and absorption, are discussed in terms of electromagnetic enhancement taking into account the In parallel-band transitions.
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Submitted 3 July, 2008; v1 submitted 27 June, 2008;
originally announced June 2008.
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Resonant light delay in GaN with ballistic and diffusive propagation
Authors:
T. V. Shubina,
M. M. Glazov,
A. A. Toropov,
N. A. Gippius,
A. Vasson,
J. Leymarie,
A. Kavokin,
A. Usui,
J. P. Bergman,
G. Pozina,
B. Monemar
Abstract:
We report on a strong delay in light propagation through bulk GaN, detected by time-of-flight spectroscopy. The delay increases resonantly as the photon energy approaches the energy of a neutral-donor bound exciton (BX), resulting in a velocity of light as low as 2100 km/s. In the close vicinity of the BX resonance, the transmitted light contains both ballistic and diffusive components. This phe…
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We report on a strong delay in light propagation through bulk GaN, detected by time-of-flight spectroscopy. The delay increases resonantly as the photon energy approaches the energy of a neutral-donor bound exciton (BX), resulting in a velocity of light as low as 2100 km/s. In the close vicinity of the BX resonance, the transmitted light contains both ballistic and diffusive components. This phenomenon is quantitatively explained in terms of optical dispersion in a medium where resonant light scattering by the BX resonance takes place in addition to the polariton propagation.
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Submitted 26 November, 2007;
originally announced November 2007.
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Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN
Authors:
T. V. Shubina,
S. V. Ivanov,
V. N. Jmerik,
D. D. Solnyshkov,
N. A. Cherkashin,
P. S. Kop'ev,
A. Vasson,
J. Leymarie,
K. F. Karlsson,
P. O. Holtz,
B. Monemar
Abstract:
We demonstrate that the 3.42 eV photoluminescence (PL) band in GaN is of the same intrinsic origin as the near-edge $\sim$3.47 eV band, but arises from regions of inversed polarity characterized by different strain and growth rate. Two absorption edges are thermally detected at 0.35 K in nanocolumn structures, exhibiting both bands. Micro-PL studies have shown similar temperature/power behavior…
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We demonstrate that the 3.42 eV photoluminescence (PL) band in GaN is of the same intrinsic origin as the near-edge $\sim$3.47 eV band, but arises from regions of inversed polarity characterized by different strain and growth rate. Two absorption edges are thermally detected at 0.35 K in nanocolumn structures, exhibiting both bands. Micro-PL studies have shown similar temperature/power behavior of these bands, with a competition in intensity in closely spaced spots accompanied by alterations of exciton level ordering. Strain-induced one-dimensional carrier confinement in small inversion domains likely explains the discrete narrow lines observed between the bands.
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Submitted 9 November, 2003;
originally announced November 2003.
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Mie-resonances, infrared emission and band gap of InN
Authors:
T. V. Shubina,
S. V. Ivanov,
V. N. Jmerik,
D. D. Solnyshkov,
V. A. Vekshin,
P. S. Kop'ev,
A. Vasson,
J. Leymarie,
A. Kavokin,
H. Amano,
K. Shimono,
A. Kasic,
B. Monemar
Abstract:
Mie resonances due to scattering/absorption of light in InN containing clusters of metallic In may have been erroneously interpreted as the infrared band gap absorption in tens of papers. Here we show by direct thermally detected optical absorption measurements that the true band gap of InN is markedly wider than currently accepted 0.7 eV. Micro-cathodoluminescence studies complemented by imagin…
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Mie resonances due to scattering/absorption of light in InN containing clusters of metallic In may have been erroneously interpreted as the infrared band gap absorption in tens of papers. Here we show by direct thermally detected optical absorption measurements that the true band gap of InN is markedly wider than currently accepted 0.7 eV. Micro-cathodoluminescence studies complemented by imaging of metallic In have shown that bright infrared emission at 0.7-0.8 eV arises from In aggregates, and is likely associated with surface states at the metal/InN interfaces.
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Submitted 30 October, 2003;
originally announced October 2003.
