Showing 1–12 of 12 results for author: Shigematsu, E

Tunable Magnon Polaritons via Eddy-Current-Induced Dissipation in Metallic-Banded YIG Spheres

Authors: Tatsushi Uno, Shugo Yoshii, Sotaro Mae, Ei Shigematsu, Ryo Ohshima, Yuichiro Ando, Masashi Shiraishi

Abstract: We demonstrate a robust method to dynamically tune magnon dissipation in yttrium iron garnet spheres by equipping a metallic band around the sphere's equator, enabling precise control over magnon-photon coupling states. The collective magnetization dynamics in the YIG sphere induce circular eddy currents in the metallic band, whose magnitude can be systematically varied by adjusting the angle betw… ▽ More We demonstrate a robust method to dynamically tune magnon dissipation in yttrium iron garnet spheres by equipping a metallic band around the sphere's equator, enabling precise control over magnon-photon coupling states. The collective magnetization dynamics in the YIG sphere induce circular eddy currents in the metallic band, whose magnitude can be systematically varied by adjusting the angle between the metallic band plane and an external static magnetic field. This angular dependence yields a pronounced modulation of the ferromagnetic resonance (FMR) linewidth, facilitating seamless transitions between the Purcell and strong coupling regimes without altering photon cavity parameters. Systematic FMR and cavity spectroscopy measurements confirm that eddy-current-induced losses govern the primary mechanism behind the observed tunable damping. By achieving extensive periodic-angular dependence of magnon relaxation rate, we precisely control the magnon-photon coupling state, approaching the critical coupling condition. These results establish the YIG-metallic-band platform as a versatile and practical approach for engineering tunable magnon-polariton systems and advancing magnonic applications, including those exploring non-Hermitian magnonics. △ Less

Submitted 11 April, 2025; originally announced April 2025.

Comments: 5 figures

Circular photogalvanic effect in an inversion-symmetry-broken bilayer germanium nanosheet

Authors: Taiki Nishijima, Ei Shigematsu, Ryo Ohshima, Keigo Matsushita, Akio Ohta, Masaaki Araidai, Junji Yuhara, Masashi Kurosawa, Masashi Shiraishi, Yuichiro Ando

Abstract: Spin-to-charge conversion in monolayer and bilayer germanium(Ge) nanosheets was demonstrated via the circular photogalvanic effect (CPGE). The CPGE current generated in a spin-splitting state of the Ge nanosheet reached a maximum value when the thickness of the Ge nanosheet corresponded to bilayer germanene, indicating that the top layer of the bilayer Ge nanosheet mainly contributed to the spin-t… ▽ More Spin-to-charge conversion in monolayer and bilayer germanium(Ge) nanosheets was demonstrated via the circular photogalvanic effect (CPGE). The CPGE current generated in a spin-splitting state of the Ge nanosheet reached a maximum value when the thickness of the Ge nanosheet corresponded to bilayer germanene, indicating that the top layer of the bilayer Ge nanosheet mainly contributed to the spin-to-charge conversion. Because the hybridization of orbitals is suppressed by isolation from the bottom Al layer for the top Ge nanosheet, the observed spin-to-charge conversion has a possibility to be related to the intrinsic features of germanene with breaking of inversion symmetry. △ Less

Submitted 21 November, 2024; originally announced November 2024.

Comments: 18pages, 4figures

Ferroic Berry Curvature Dipole in a Topological Crystalline Insulator at Room Temperature

Authors: T. Nishijima, T. Watanabe, H. Sekiguchi, Y. Ando, E. Shigematsu, R. Ohshima, S. Kuroda, M. Shiraishi

Abstract: The physics related to Berry curvature is now a central research topic in condensed matter physics. The Berry curvature dipole (BCD) is a significant and intriguing condensed matter phenomenon that involves inversion symmetry breaking. However, the creation and controllability of BCDs have so far been limited to far below room temperature (RT) and non-volatile (i.e., ferroic) BCDs have not yet bee… ▽ More The physics related to Berry curvature is now a central research topic in condensed matter physics. The Berry curvature dipole (BCD) is a significant and intriguing condensed matter phenomenon that involves inversion symmetry breaking. However, the creation and controllability of BCDs have so far been limited to far below room temperature (RT) and non-volatile (i.e., ferroic) BCDs have not yet been discovered, hindering further progress in topological physics. In this work, we demonstrate a switchable and non-volatile BCD effect at RT in a topological crystalline insulator, Pb1-xSnxTe (PST), which is attributed to ferroic distortion. Surprisingly, the magnitude of the ferroic BCD is several orders of magnitude greater than that of the non-ferroic BCDs that appear, for example, in transition metal dichalcogenides. The discovery of this ferroic and extraordinarily large BCD in PST could pave the way for further progress in topological material science and the engineering of novel topological devices. △ Less

Submitted 2 March, 2023; originally announced March 2023.

Comments: 23 pages, 3 figures

Modulation of Hanle magnetoresistance in an ultrathin platinum film by ionic gating

Authors: Yuu Maruyama, Ryo Ohshima, Ei Shigematsu, Yuichiro Ando, Masashi Shiraishi

Abstract: Hanle magnetoresistance (HMR) is a type of magnetoresistance where interplay of the spin Hall effect, Hanle-type spin precession, and spin-dependent scattering at the top/bottom surfaces in a heavy metal controls the effect. In this study, we modulate HMR in ultrathin Pt by ionic gating, where the surface Rashba field created by a strong electric field at the interface between the ionic gate and P… ▽ More Hanle magnetoresistance (HMR) is a type of magnetoresistance where interplay of the spin Hall effect, Hanle-type spin precession, and spin-dependent scattering at the top/bottom surfaces in a heavy metal controls the effect. In this study, we modulate HMR in ultrathin Pt by ionic gating, where the surface Rashba field created by a strong electric field at the interface between the ionic gate and Pt plays the dominant role in the modulation. This finding can facilitate investigations of gate-tunable, spin-related effects and fabrication of spin devices. △ Less

Submitted 16 February, 2023; originally announced February 2023.

Comments: 10 pages, 3 figures (To appear in Applied Physics Express)

Anomalous sign inversion of spin-orbit torque in ferromagnetic/nonmagnetic bilayer systems due to self-induced spin-orbit torque

Authors: Motomi Aoki, Ei Shigematsu, Ryo Ohshima, Teruya Shinjo, Masashi Shiraishi, Yuichiro Ando

Abstract: Self-induced spin-orbit torques (SI-SOTs) in ferromagnetic (FM) layers have been overlooked when estimating the spin Hall angle (SHA) of adjacent nonmagnetic (NM) layers. In this work, we observe anomalous sign inversion of the total SOT in the spin-torque ferromagnetic resonance due to the enhanced SI-SOT, and successfully rationalize the sign inversion through a theoretical calculation consideri… ▽ More Self-induced spin-orbit torques (SI-SOTs) in ferromagnetic (FM) layers have been overlooked when estimating the spin Hall angle (SHA) of adjacent nonmagnetic (NM) layers. In this work, we observe anomalous sign inversion of the total SOT in the spin-torque ferromagnetic resonance due to the enhanced SI-SOT, and successfully rationalize the sign inversion through a theoretical calculation considering the SHE in both the NM and FM layers. The findings show that using an FM layer whose SHA sign is the same as that of the NM achieves efficient SOT-magnetization switching with the assistance of the SI-SOT. The contribution of the SI-SOT becomes salient for a weakly conductive NM layer, and conventional analyses that do not consider the SI-SOT can overestimate the SHA of the NM layer by a factor of more than 150. △ Less

Submitted 19 November, 2022; originally announced November 2022.

Comments: 9 pages, 4 figures

Journal ref: Phys. Rev. B 106, 174418(2022)

All-electric spin device operation using the Weyl semimetal, WTe$_2$, at room temperature

Authors: Kosuke Ohnishi, Motomi Aoki, Ryo Ohshima, Ei Shigematsu, Yuichiro Ando, Taishi Takenobu, Masashi Shiraishi

Abstract: Topological quantum materials (TQMs) possess abundant and attractive spin physics, and a Weyl semimetal is the representative material because of the generation of spin polarization that is available for spin devices due to fictitious Weyl monopoles at the edge of the Weyl node. Meanwhile, a Weyl semimetal allows the other but unexplored spin polarization due to local symmetry breaking. Here, we r… ▽ More Topological quantum materials (TQMs) possess abundant and attractive spin physics, and a Weyl semimetal is the representative material because of the generation of spin polarization that is available for spin devices due to fictitious Weyl monopoles at the edge of the Weyl node. Meanwhile, a Weyl semimetal allows the other but unexplored spin polarization due to local symmetry breaking. Here, we report all-electric spin device operation using a type-II Weyl semimetal, WTe$_2$, at room temperature. The polarization of spins propagating in the all-electric device is perpendicular to the WTe$_2$ plane, which is ascribed to local in-plane symmetry breaking in WTe$_2$, yielding the spin polarization creation of propagating charged carriers, namely, the spin-polarized state creation from the non-polarized state. Systematic control experiments unequivocally negate unexpected artifacts, such as the anomalous Hall effect, the anisotropic magnetoresistance etc. Creation of all-electric spin devices made of TQMs and their operation at room temperature can pave a new pathway for novel spin devices made of TQMs resilient to thermal fluctuation. △ Less

Submitted 22 August, 2022; originally announced August 2022.

Comments: 20 pages, 4 figures

Observation of gigantic spin conversion anisotropy in bismuth

Authors: Naoki Fukumoto, Ryo Ohshima, Motomi Aoki, Yuki Fuseya, Masayuki Matsushima, Ei Shigematsu, Teruya Shinjo, Yuichiro Ando, Shoya Sakamoto, Masanobu Shiga, Shinji Miwa, Masashi Shiraishi

Abstract: Whilst the g-factor can be anisotropic due to the spin-orbit interaction (SOI), its existence in solids cannot be simply asserted from a band structure, which hinders progress on studies from such the viewpoints. The g-factor in bismuth (Bi) is largely anisotropic; especially for holes at T-point, the g-factor perpendicular to the trigonal axis is negligibly small (< 0.112), whereas the g-factor a… ▽ More Whilst the g-factor can be anisotropic due to the spin-orbit interaction (SOI), its existence in solids cannot be simply asserted from a band structure, which hinders progress on studies from such the viewpoints. The g-factor in bismuth (Bi) is largely anisotropic; especially for holes at T-point, the g-factor perpendicular to the trigonal axis is negligibly small (< 0.112), whereas the g-factor along the trigonal axis is very large (62.7). We clarified in this work that the large g- factor anisotropy gives rise to the gigantic spin conversion anisotropy in Bi from experimental and theoretical approaches. Spin-torque ferromagnetic resonance was applied to estimate the spin conversion efficiency in rhombohedral (110) Bi to be 17%, which is unlike the negligibly small efficiency in Bi(111). Harmonic Hall measurements supports the large spin conversion efficiency in Bi(110). This is the first observation of gigantic spin conversion anisotropy as the clear manifestation of the g-factor anisotropy. Beyond the emblematic case of Bi, our study unveiled the significance of the g-factor anisotropy in condensed-matter physics and can pave a pathway toward establishing novel spin physics under g-factor control. △ Less

Submitted 15 August, 2022; v1 submitted 31 July, 2022; originally announced August 2022.

Comments: 28 pages, 7 figures

Journal ref: PNAS 120, e2215030120 (2023)

Giant spin Hall angle in the Heusler alloy Weyl ferromagnet Co$_2$MnGa

Authors: L. Leiva, S. Granville, Y. Zhang, S. Dushenko, E. Shigematsu, T. Shinjo, R. Ohshima, Y. Ando, M. Shiraishi

Abstract: Weyl semimetals are playing a major role in condensed matter physics due to exotic topological properties, and their coexistence with ferromagnetism may lead to enhanced spin-related phenomena. Here, the inverse spin Hall effect (ISHE) in the ferromagnetic Weyl-semimetal Heusler alloy Co$_2$MnGa was investigated at room temperature by means of electrical spin injection in lateral spin valve struct… ▽ More Weyl semimetals are playing a major role in condensed matter physics due to exotic topological properties, and their coexistence with ferromagnetism may lead to enhanced spin-related phenomena. Here, the inverse spin Hall effect (ISHE) in the ferromagnetic Weyl-semimetal Heusler alloy Co$_2$MnGa was investigated at room temperature by means of electrical spin injection in lateral spin valve structures. Spin transport properties such as spin polarization and spin diffusion length in this material were precisely extracted in order to estimate the spin Hall angle $θ_{\textrm{SH}}$, which was found to be $-0.19\pm0.04$ and is among the highest reported for a ferromagnet. Although this value is on the same order of magnitude of known heavy metals, the significantly higher resistivity of Co$_2$MnGa implies an improvement on the magnitude of detection voltages, while its ferromagnetic nature allows controlling the intensity of SHE through the magnetization direction. It was also shown that Onsager's reciprocity does not hold for this system, which is in part attributable to a different spin-dependent Hall conductivity for spin-up and spin-down carriers. △ Less

Submitted 18 March, 2021; originally announced March 2021.

Comments: 14 pages with 13 figures including supplemental materials

Journal ref: Physical Review B 103, L041114 (2021)

Inplane spin orbit torque magnetization switching and its detection using the spin rectification effect at sub-GHz frequencies

Authors: Motomi Aoki, Ei Shigematsu, Ryo Ohshima, Syuta Honda, Teruya Shinjo, Masashi Shiraishi, Yuichiro Ando

Abstract: Inplane magnetization reversal of a permalloy/platinum bilayer was detected using the spin rectification effect. Using a sub GHz microwave frequency to excite spin torque ferromagnetic resonance (ST FMR) in the bilayer induces two discrete DC voltages around an external static magnetic field of 0 mT. These discrete voltages depend on the magnetization directions of the permalloy and enable detecti… ▽ More Inplane magnetization reversal of a permalloy/platinum bilayer was detected using the spin rectification effect. Using a sub GHz microwave frequency to excite spin torque ferromagnetic resonance (ST FMR) in the bilayer induces two discrete DC voltages around an external static magnetic field of 0 mT. These discrete voltages depend on the magnetization directions of the permalloy and enable detection of the inplane magnetization reversal. The threshold current density for the magnetization reversal is from 10 to 20 MA/cm^2, the same order as for known spin orbit torque (SOT) switching with in-plane magnetization materials. The magnitude of the signal is the same or larger than that of the typical ST FMR signal; that is, detection of magnetization switching is highly sensitive in spite of deviation from the optimal ST-FMR condition. The proposed method is applicable to a simple device structure even for a small ferromagnetic electrode with a width of 100 nm. △ Less

Submitted 9 October, 2020; originally announced October 2020.

Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves

Authors: H. Koike, S. Lee, R. Ohshima, E. Shigematsu, M. Goto, S. Miwa, Y. Suzuki, T. Sasaki, Y. Ando, M. Shiraishi

Abstract: To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger local strain into the Si channel by changing a capping insulator. The highest MR ratio of 1.4% is achieved in the Si-LSVs through these improvements, with significant roles played by a reduction in the resistance-area produ… ▽ More To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger local strain into the Si channel by changing a capping insulator. The highest MR ratio of 1.4% is achieved in the Si-LSVs through these improvements, with significant roles played by a reduction in the resistance-area product of the ferromagnetic contacts and an enhancement of the momentum relaxation time in the Si channel. △ Less

Submitted 31 August, 2020; originally announced August 2020.

Comments: 14 pages, 4 figures

Optical visualization of the enhanced spin Hall effect in bismuth doped silicon

Authors: Taiki Nishijima, Yakun Liu, Dushyant Kumar, Kyusup Lee, Fabien Rortais, Syuta Honda, Yuichiro Ando, Ei Shigematsu, Ryo Ohshima, Hyunsoo Yang, Masashi Shiraishi

Abstract: Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a dc current to the Bi-doped Si, clear helicity-dependent photovoltages are detected at the edges of the Si channel, indicating a perpendicular spin accumulation… ▽ More Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a dc current to the Bi-doped Si, clear helicity-dependent photovoltages are detected at the edges of the Si channel, indicating a perpendicular spin accumulation due to the SHE. In contrast, the HDP signals are negligibly small for phosphorus-doped Si. Compared to a platinum channel, which has a large spin Hall angle, more than two-orders of magnitude larger HDP signals are obtained in the Bi-doped Si. △ Less

Submitted 2 June, 2020; originally announced June 2020.

Spin-wave-induced lateral temperature gradient in a YIG thin film/GGG system excited in an ESR cavity

Authors: Ei Shigematsu, Yuichiro Ando, Sergey Dushenko, Teruya Shinjo, Masashi Shiraishi

Abstract: Lateral thermal gradient of an yttrium iron garnet (YIG) film under the microwave application in the cavity of the electron spin resonance system (ESR) was measured at room temperature by fabricating a Cu/Sb thermocouple onto it. To date, thermal transport in YIG films caused by the Damon-Eshbach mode (DEM) - the unidirectional spin-wave heat conveyer effect - was demonstrated only by the excitati… ▽ More Lateral thermal gradient of an yttrium iron garnet (YIG) film under the microwave application in the cavity of the electron spin resonance system (ESR) was measured at room temperature by fabricating a Cu/Sb thermocouple onto it. To date, thermal transport in YIG films caused by the Damon-Eshbach mode (DEM) - the unidirectional spin-wave heat conveyer effect - was demonstrated only by the excitation using coplanar waveguides. Here we show that effect exists even under YIG excitation using the ESR cavity - tool often employed to realize spin pumping. The temperature difference observed around the ferromagnetic resonance (FMR) field under the 4 mW microwave power peaked at 13 mK. The observed thermoelectric signal indicates the imbalance of the population between the DEMs that propagate near the top and bottom surfaces of the YIG film. We attribute the DEM population imbalance to the different magnetic damping near the top and bottom YIG surfaces. Additionally, the spin wave dynamics of the system were investigated using the micromagnetic simulations. The micromagnetic simulations confirmed the existence of the DEM imbalance in the system with the increased Gilbert damping at one of the YIG interfaces. The reported results are indispensable for the quantitative estimation of the electromotive force in the spin-charge conversion experiments using ESR cavities. △ Less

Submitted 16 October, 2018; originally announced October 2018.

Comments: 18 pages, 6 figures

Journal ref: Appl. Phys. Lett. 112, 212401 (2018)