Non-Fermi liquid induced by U(1) gauge field interactions: a functional renormalization group analysis
Authors:
Thomas P. Sheerin,
Chris A. Hooley
Abstract:
We study the non-Fermi-liquid state formed by an isotropic, degenerate Fermi gas in two spatial dimensions interacting with a U(1) gauge field. Our calculation uses the functional renormalization group (fRG) with a soft frequency cutoff for the fermions. The fRG scheme we employ takes account of the gauge symmetry, which imposes relations (modified Ward-Takahashi identities) between the couplings…
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We study the non-Fermi-liquid state formed by an isotropic, degenerate Fermi gas in two spatial dimensions interacting with a U(1) gauge field. Our calculation uses the functional renormalization group (fRG) with a soft frequency cutoff for the fermions. The fRG scheme we employ takes account of the gauge symmetry, which imposes relations (modified Ward-Takahashi identities) between the couplings which constrain the RG flow. The critical exponents and couplings we find for the resulting non-Fermi liquid are mostly insensitive to whether or not we enforce the gauge symmetry constraints, which signifies either that the constraints are superfluous or that the frequency-cutoff scheme is particularly robust. The exception is the gauge-boson mass term, which is RG-relevant about the fixed point without the constraints, but is irrelevant when they are enforced. The latter is physically accurate, as a gauge symmetry cannot be spontaneously broken. In addition, we find $z=2$ and $Σ(ω,k_F)\simω^{1/2}$ for the boson dynamical exponent and scaling of the fermion self-energy, respectively. These results differ considerably from those of past works on the model, though we argue for their plausibility.
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Submitted 27 November, 2024;
originally announced November 2024.
Electronic and optical properties of boron containing GaN alloys: The role boron atom clustering
Authors:
Cara-Lena Nies,
Thomas P. Sheerin,
Stefan Schulz
Abstract:
Boron (B) containing III-nitride materials, such as wurtzite (B,Ga)N alloys, have recently attracted significant interest to tailor the electronic and optical properties of optoelectronic devices operating in the visible and ultraviolet spectral range. However, the growth of high quality samples is challenging and B atom clustering is often observed in (B,Ga)N alloys. To date, fundamental understa…
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Boron (B) containing III-nitride materials, such as wurtzite (B,Ga)N alloys, have recently attracted significant interest to tailor the electronic and optical properties of optoelectronic devices operating in the visible and ultraviolet spectral range. However, the growth of high quality samples is challenging and B atom clustering is often observed in (B,Ga)N alloys. To date, fundamental understanding of the impact of such clustering on electronic and optical properties of these alloys is sparse. In this work we employ density functional theory (DFT) in the framework of the meta generalized gradient approximation (modified Becke Johnson (mBJ) functional) to provide insight into this question. We use mBJ DFT calculations, benchmarked against state-of-the-art hybrid functional DFT, on (B,Ga)N alloys in the experimentally relevant B content range of up to 7.4%. Our results reveal that B atom clustering can lead to a strong reduction in the bandgap of such an alloy, in contrast to alloy configurations where B atoms are not forming clusters, thus not sharing nitrogen (N) atoms. We find that the reduction in bandgap is linked mainly to carrier localization effects in the valence band, which stem from local strain and polarization field effects. However, our study also reveals that the alloy microstructure of a B atom cluster plays an important role: B atom chains along the wurtzite c-axis impact the electronic structure far less strongly when compared to a chain formed within the c-plane. This effect is again linked to local polarization field effects and the orbital character of the involved valence states in wurtzite BN and GaN. Overall, our calculations show that controlling the alloy microstructure of (B,Ga)N alloys is of central importance when it comes to utilizing these systems in future optoelectronic devices with improved efficiencies.
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Submitted 15 August, 2023;
originally announced August 2023.
