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Excess noise in the anomalous metallic phase in amorphous indium oxide
Authors:
André Haug,
Dan Shahar
Abstract:
More than 25 years ago, unexpected metallic behavior was discovered on the superconducting side of the superconductor-to-insulator transition. To this day, the origin of this behavior is unclear. In this work, we present resistance and broadband voltage noise measurements in the kilohertz regime in amorphous indium oxide. We find that the metallic behavior gives rise to excess noise much larger th…
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More than 25 years ago, unexpected metallic behavior was discovered on the superconducting side of the superconductor-to-insulator transition. To this day, the origin of this behavior is unclear. In this work, we present resistance and broadband voltage noise measurements in the kilohertz regime in amorphous indium oxide. We find that the metallic behavior gives rise to excess noise much larger than what is expected from thermal noise with an unexpected frequency and temperature dependence whose origin remains elusive.
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Submitted 25 May, 2023;
originally announced May 2023.
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Gradient-Based Optimization of Optical Vortex Beam Emitters
Authors:
Alexander D. White,
Logan Su,
Daniel I. Shahar,
Ki Youl Yang,
Geun Ho Ahn,
Jinhie Skarda,
Siddharth Ramachandran,
Jelena Vučković
Abstract:
Vortex beams are stable solutions of Maxwell's equations that carry phase singularities and orbital angular momentum, unique properties that give rise to many applications in the basic sciences, optical communications, and quantum technologies. Scalable integration and fabrication of vortex beam emitters will allow these applications to flourish and enable new applications not possible with tradit…
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Vortex beams are stable solutions of Maxwell's equations that carry phase singularities and orbital angular momentum, unique properties that give rise to many applications in the basic sciences, optical communications, and quantum technologies. Scalable integration and fabrication of vortex beam emitters will allow these applications to flourish and enable new applications not possible with traditional optics. Here we present a general framework to generate integrated vortex beam emitters using photonic inverse design. We experimentally demonstrate generation of vortex beams with angular momentum spanning -3$\hbar$ to 3$\hbar$. We show the generality of this design procedure by designing a vortex beam multiplexer capable of exciting a custom vortex beam fiber. Finally, we produce foundry-fabricated beam emitters with wide-bandwidths and high-efficiencies that take advantage of a multi-layer heterogeneous integration.
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Submitted 18 February, 2022;
originally announced February 2022.
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Direct observation of intrinsic surface magnetic disorder in amorphous superconducting films
Authors:
Idan Tamir,
Martina Trahms,
Franzisca Gorniaczyk,
Felix von Oppen,
Dan Shahar,
Katharina J. Franke
Abstract:
The interplay between disorder and interactions can dramatically influence the physical properties of thin-film superconductors. In the most extreme case, strong disorder is able to suppress superconductivity as an insulating phase emerges. Due to the known pair-breaking potential of magnetic disorder on superconductors, the research focus is on the influence of non-magnetic disorder. Here we prov…
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The interplay between disorder and interactions can dramatically influence the physical properties of thin-film superconductors. In the most extreme case, strong disorder is able to suppress superconductivity as an insulating phase emerges. Due to the known pair-breaking potential of magnetic disorder on superconductors, the research focus is on the influence of non-magnetic disorder. Here we provide direct evidence that magnetic disorder is also present at the surface of amorphous superconducting films. This magnetic disorder is present even in the absence of magnetic impurity atoms and is intimately related to the surface termination itself. While bulk superconductivity survives in sufficiently thick films, we suggest that magnetic disorder may crucially affect the superconductor-to-insulator transition in the thin-film limit.
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Submitted 8 December, 2021;
originally announced December 2021.
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Limited role of vortices in transport in highly disordered superconductors near $B_{c2}$
Authors:
Adam Doron,
Tal Levinson,
Franzisca Gorniaczyk,
Idan Tamir,
Dan Shahar
Abstract:
At finite temperatures and magnetic fields, type-II superconductors in the mixed state have a non-zero resistance that is overwhelmingly associated with vortex motion. In this work we study amorphous indium oxide films, which are thicker than the superconducting coherence length, and show that near $B_{c2}$ their resistance in the presence of perpendicular and in-plane magnetic fields becomes almo…
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At finite temperatures and magnetic fields, type-II superconductors in the mixed state have a non-zero resistance that is overwhelmingly associated with vortex motion. In this work we study amorphous indium oxide films, which are thicker than the superconducting coherence length, and show that near $B_{c2}$ their resistance in the presence of perpendicular and in-plane magnetic fields becomes almost isotropic. Up to a linear rescaling of the magnetic fields both the equilibrium resistance as well as the non-equilibrium current-voltage characteristics are insensitive to magnetic field orientation suggesting that, for our superconductors, there is no fundamental difference in transport between perpendicular and in-plane magnetic fields. Additionally we show that this near-isotropic behavior extends to the insulating phase of amorphous indium oxide films of larger disorder strength that undergo a magnetic field driven superconductor-insulator transition. This near-isotropic behavior raises questions regarding the role of vortices in transport and the origin of resistance in thin-film superconductors.
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Submitted 7 November, 2019;
originally announced November 2019.
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The Critical Current of Disordered Superconductors near T=0
Authors:
Adam Doron,
Tal Levinson,
Franzisca Gorniaczyk,
Idan Tamir,
Dan Shahar
Abstract:
An increasing current through a superconductor can result in a discontinuous increase in the differential resistance at the critical current. This critical current is typically associated either with breaking of Cooper-pairs (de-pairing) or with a collective motion of vortices (de-pinning). In this work we measure superconducting amorphous indium oxide films at low temperatures and high magnetic f…
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An increasing current through a superconductor can result in a discontinuous increase in the differential resistance at the critical current. This critical current is typically associated either with breaking of Cooper-pairs (de-pairing) or with a collective motion of vortices (de-pinning). In this work we measure superconducting amorphous indium oxide films at low temperatures and high magnetic fields. Using heat-balance considerations we demonstrate that the current-voltage characteristics are well explained by electron overheating that occurs due to the thermal decoupling of the electrons from the host phonons. As a result the electrons overheat to a significantly higher temperature than that of the lattice. By solving the heat-balance equation we are able to accurately predict the critical currents in a variety of experimental conditions. The heat-balance approach stems directly from energy conservation. As such it is universal and applies to diverse situations from critical currents in superconductors to climate bi-stabilities that can initiate another ice-age. One disadvantage of the universal nature of this approach is that it is insensitive to the microscopic details of the system, which limits our ability to draw conclusions regarding the initial departure from equilibrium.
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Submitted 25 August, 2019;
originally announced August 2019.
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Excessive Noise as a Test for Many-Body Localization
Authors:
I. Tamir,
T. Levinson,
F. Gorniaczyk,
A. Doron,
J. Lieb,
D. Shahar
Abstract:
Recent experimental reports suggested the existence of a finite-temperature insulator in the vicinity of the superconductor-insulator transition. The rapid decay of conductivity over a narrow temperature range was theoretically linked to both a finite-temperature transition to a many-body-localized state, and to a charge-Berezinskii Kosterlitz Thouless transition. Here we report of low-frequency n…
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Recent experimental reports suggested the existence of a finite-temperature insulator in the vicinity of the superconductor-insulator transition. The rapid decay of conductivity over a narrow temperature range was theoretically linked to both a finite-temperature transition to a many-body-localized state, and to a charge-Berezinskii Kosterlitz Thouless transition. Here we report of low-frequency noise measurements of such insulators to test for many body localization. We observed a huge enhancement of the low-temperatures noise when exceeding a threshold voltage for nonlinear conductivity and discuss our results in light of the theoretical models.
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Submitted 29 January, 2019; v1 submitted 25 June, 2018;
originally announced June 2018.
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Collective energy gap of preformed Cooper-pairs in disordered superconductors
Authors:
Thomas Dubouchet,
Benjamin Sacépé,
Johanna Seidemann,
Dan Shahar,
Marc Sanquer,
Claude Chapelier
Abstract:
In most superconductors the transition to the superconducting state is driven by the binding of electrons into Cooper-pairs. The condensation of these pairs into a single, phase coherent, quantum state takes place concomitantly with their formation at the transition temperature, $T_c$. A different scenario occurs in some disordered, amorphous, superconductors: Instead of a pairing-driven transitio…
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In most superconductors the transition to the superconducting state is driven by the binding of electrons into Cooper-pairs. The condensation of these pairs into a single, phase coherent, quantum state takes place concomitantly with their formation at the transition temperature, $T_c$. A different scenario occurs in some disordered, amorphous, superconductors: Instead of a pairing-driven transition, incoherent Cooper pairs first pre-form above $T_c$, causing the opening of a pseudogap, and then, at $T_c$, condense into the phase coherent superconducting state. Such a two-step scenario implies the existence of a new energy scale, $Δ_{c}$, driving the collective superconducting transition of the preformed pairs. Here we unveil this energy scale by means of Andreev spectroscopy in superconducting thin films of amorphous indium oxide. We observe two Andreev conductance peaks at $\pm Δ_{c}$ that develop only below $T_c$ and for highly disordered films on the verge of the transition to insulator. Our findings demonstrate that amorphous superconducting films provide prototypical disordered quantum systems to explore the collective superfluid transition of preformed Cooper-pairs pairs.
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Submitted 1 June, 2018;
originally announced June 2018.
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The Temperature dependence of the magneto-resistance peak in highly disordered superconductors
Authors:
Adam Doron,
Idan Tamir,
Tal Levinson,
Franzisca Gorniaczyk,
Dan Shahar
Abstract:
Highly disordered superconductors have a rich phase diagram. At a moderate magnetic field (B) the samples go through the superconductor-insulator quantum phase transition. In the insulating phase, the resistance increases sharply with B up to a magneto-resistance peak beyond which the resistance drops with B. In this manuscript we follow the temperature (T) evolution of this magneto-resistance pea…
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Highly disordered superconductors have a rich phase diagram. At a moderate magnetic field (B) the samples go through the superconductor-insulator quantum phase transition. In the insulating phase, the resistance increases sharply with B up to a magneto-resistance peak beyond which the resistance drops with B. In this manuscript we follow the temperature (T) evolution of this magneto-resistance peak. We show that as T is reduced, the peak appears at lower B's approaching the critical field of the superconductor-insulator transition. Due to experimental limitations we are unable to determine whether the T=0 limiting position of the peak matches that of the critical field or is at comparable but slightly higher B. We show that, although the peak appears at different B values, its resistance follows an activated T dependence over a large T range with a prefactor that is very similar to the quantum of resistance for cooper-pairs.
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Submitted 23 April, 2018;
originally announced April 2018.
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Extreme Sensitivity of the Superconducting State in Thin Films
Authors:
I. Tamir,
A. Benyamini,
E. J. Telford,
F. Gorniaczyk,
A. Doron,
T. Levinson,
D. Wang,
F. Gay,
B. Sacépé,
J. Hone,
K. Watanabe,
T. Taniguchi,
C. R. Dean,
A. N. Pasupathy,
D. Shahar
Abstract:
All non-interacting two-dimensional electronic systems are expected to exhibit an insulating ground state. This conspicuous absence of the metallic phase has been challenged only in the case of low-disorder, low density, semiconducting systems where strong interactions dominate the electronic state. Unexpectedly, over the last two decades, there have been multiple reports on the observation of a s…
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All non-interacting two-dimensional electronic systems are expected to exhibit an insulating ground state. This conspicuous absence of the metallic phase has been challenged only in the case of low-disorder, low density, semiconducting systems where strong interactions dominate the electronic state. Unexpectedly, over the last two decades, there have been multiple reports on the observation of a state with metallic characteristics on a variety of thin-film superconductors. To date, no theoretical explanation has been able to fully capture the existence of such a state for the large variety of superconductors exhibiting it. Here we show that for two very different thin-film superconductors, amorphous indium-oxide and a single-crystal of 2H-NbSe2, this metallic state can be eliminated by filtering external radiation. Our results show that these superconducting films are extremely sensitive to external perturbations leading to the suppression of superconductivity and the appearance of temperature independent, metallic like, transport at low temperatures. We relate the extreme sensitivity to the theoretical observation that, in two-dimensions, superconductivity is only marginally stable.
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Submitted 12 April, 2018;
originally announced April 2018.
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Hydrodynamic limits for long-range asymmetric interacting particle systems
Authors:
Sunder Sethuraman,
Doron Shahar
Abstract:
We consider the hydrodynamic scaling behavior of the mass density with respect to a general class of mass conservative interacting particle systems on ${\mathbb Z}^n$, where the jump rates are asymmetric and long-range of order $\|x\|^{-(n+α)}$ for a particle displacement of order $\|x\|$. Two types of evolution equations are identified depending on the strength of the long-range asymmetry. When…
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We consider the hydrodynamic scaling behavior of the mass density with respect to a general class of mass conservative interacting particle systems on ${\mathbb Z}^n$, where the jump rates are asymmetric and long-range of order $\|x\|^{-(n+α)}$ for a particle displacement of order $\|x\|$. Two types of evolution equations are identified depending on the strength of the long-range asymmetry. When $0<α<1$, we find a new integro-partial differential hydrodynamic equation, in an anomalous space-time scale. On the other hand, when $α\geq 1$, we derive a Burgers hydrodynamic equation, as in the finite-range setting, in Euler scale.
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Submitted 26 February, 2018;
originally announced February 2018.
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Absence of cyclotron resonance in the anomalous metallic phase in InO$_x$
Authors:
Youcheng Wang,
Idan Tamir,
Dan Shahar,
N. P. Armitage
Abstract:
It is observed that many thin superconducting films with not too high disorder level (generally R$_N/\Box \leq 2000 Ω$) placed in magnetic field show an anomalous metallic phase where the resistance is low but still finite as temperature goes to zero. Here we report in weakly disordered amorphous InO$_x$ thin films, that this "Bose metal" metal phase possesses no cyclotron resonance and hence non-…
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It is observed that many thin superconducting films with not too high disorder level (generally R$_N/\Box \leq 2000 Ω$) placed in magnetic field show an anomalous metallic phase where the resistance is low but still finite as temperature goes to zero. Here we report in weakly disordered amorphous InO$_x$ thin films, that this "Bose metal" metal phase possesses no cyclotron resonance and hence non-Drude electrodynamics. Its microwave dynamical conductivity shows signatures of remaining short-range superconducting correlations and strong phase fluctuations through the whole anomalous regime. The absence of a finite frequency resonant mode can be associated with a vanishing downstream component of the vortex current parallel to the supercurrent and an emergent particle-hole symmetry of this anomalous metal, which establishes its non-Fermi liquid character.
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Submitted 20 April, 2018; v1 submitted 6 August, 2017;
originally announced August 2017.
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Non-equilibrium restoration of duality symmetry in the vicinity of the superconductor-insulator transition
Authors:
I. Tamir,
A. Doron,
T. Levinson,
F. Gorniaczyk,
G. C. Tewari,
D. Shahar
Abstract:
The magnetic field driven superconductor to insulator transition in thin films was theoretically analyzed via a vortex-charge duality transformation applied to the Hamiltonian. Vortices condensation was conjectured as the underline physical mechanism of the insulating phase. Experimental evidence supported duality symmetry across the magnetic-field driven superconductor to insulator transition in…
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The magnetic field driven superconductor to insulator transition in thin films was theoretically analyzed via a vortex-charge duality transformation applied to the Hamiltonian. Vortices condensation was conjectured as the underline physical mechanism of the insulating phase. Experimental evidence supported duality symmetry across the magnetic-field driven superconductor to insulator transition in amorphous Indium Oxide films. Counterintuitively, duality symmetry is broken at low temperatures where the insulating phase develops strongly non linear current-voltage characteristics. Here, we follow the breakdown of duality symmetry down to very low temperatures and demonstrate the restoration of duality symmetry out of equilibrium.
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Submitted 28 September, 2017; v1 submitted 12 June, 2017;
originally announced June 2017.
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A Direct Determination of the Temperature of Overheated Electrons in an Insulator
Authors:
Tal Levinson,
Adam Doron,
Idan Tamir,
Girish Chandra Tewari,
Dan Shahar
Abstract:
Highly disordered superconductors, in the magnetic-field-driven insulating state, can show discontinuous current-voltage characteristics. Electron overheating has been shown to give a consistent description of this behavior, but there are other, more exotic, explanations including a novel, superinsulating state and a many-body localized state. We present AC-DC crossed-measurements, in which the ap…
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Highly disordered superconductors, in the magnetic-field-driven insulating state, can show discontinuous current-voltage characteristics. Electron overheating has been shown to give a consistent description of this behavior, but there are other, more exotic, explanations including a novel, superinsulating state and a many-body localized state. We present AC-DC crossed-measurements, in which the application of a DC voltage is applied along our sample, while a small AC voltage is applied in the transverse direction. We varied the DC voltage and observed a simultaneous discontinuity in both AC and DC currents. We show that the inferred electron-temperature in the transverse measurement matches that in the longitudinal one, strongly supporting electron overheating as the source of observed current-voltage characteristics. Our measurement technique may be applicable as a method of probing electron overheating in many other physical systems, which show discontinuous or non-linear current-voltage characteristics.
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Submitted 30 June, 2016; v1 submitted 22 June, 2016;
originally announced June 2016.
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Instability of insulators near quantum phase transitions
Authors:
Adam Doron,
Idan Tamir,
Tal Levinson,
Maoz Ovadia,
Benjamin Sacépé,
Dan Shahar
Abstract:
Thin films of Amorphous indium oxide undergo a magnetic field driven superconducting to insulator quantum phase transition. In the insulating phase, the current-voltage characteristics show large current discontinuities due to overheating of electrons. We show that the onset voltage for the discontinuities vanishes as we approach the quantum critical point.
As a result the insulating phase becom…
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Thin films of Amorphous indium oxide undergo a magnetic field driven superconducting to insulator quantum phase transition. In the insulating phase, the current-voltage characteristics show large current discontinuities due to overheating of electrons. We show that the onset voltage for the discontinuities vanishes as we approach the quantum critical point.
As a result the insulating phase becomes unstable with respect to any applied voltage making it, at least experimentally, immeasurable.
We emphasize that unlike previous reports of the absence of linear response near quantum phase transitions, in our system, the departure from equilibrium is discontinuous. Because the conditions for these discontinuities are satisfied in most insulators at low temperatures, and due to the decay of all characteristic energy scales near quantum phase transitions, we believe that this instability is general and should occur in various systems while approaching their quantum critical point. Accounting for this instability is crucial for determining the critical behavior of systems near the transition.
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Submitted 9 November, 2017; v1 submitted 21 June, 2016;
originally announced June 2016.
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Finite Size Effect in Amorphous Indium oxide
Authors:
Sreemanta Mitra,
Girish C. Tewari,
Diana Mahalu,
Dan Shahar
Abstract:
We study the low temperature magneto-transport properties of several highly disordered amorphous Indium oxide(a:InO) samples. Simultaneously fabricated devices comprising a 2-dimensional (2D) film and 10 $μ$m long wires of different widths were measured to investigate the effect of size as we approach the 1D limit, which is around 4 times the correlation length, and happens to be around 100 nm for…
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We study the low temperature magneto-transport properties of several highly disordered amorphous Indium oxide(a:InO) samples. Simultaneously fabricated devices comprising a 2-dimensional (2D) film and 10 $μ$m long wires of different widths were measured to investigate the effect of size as we approach the 1D limit, which is around 4 times the correlation length, and happens to be around 100 nm for a:InO. The film and the wires showed magnetic field ({\it B}) induced superconductor to insulator transition (SIT). In the superconducting side, the resistance increased with decrease in wire width, whereas, an opposite trend is observed in the insulating side. We find that this effect can be explained in light of charge-vortex duality picture of the SIT. Resistance of the 2D film follows an activated behavior over the temperature ($T$), whereas, the wires show a crossover from the high-$T$ activated to a $T$-independent behavior. At high temperature regime the wires' resistance follow the film's until they deviate and became independent of $T$. We find that temperature at which this deviation occurs evolve with magnetic field and the width of the wire, which show the effect of finite size on the transport.
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Submitted 24 March, 2016; v1 submitted 7 September, 2015;
originally announced September 2015.
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Negative Magnetoresistance in Amorphous Indium Oxide Wires
Authors:
Sreemanta Mitra,
Girish C Tewari,
Diana Mahalu,
Dan Shahar
Abstract:
We study magneto-transport properties of several amorphous Indium oxide nanowires of different widths. The wires show superconducting transition at zero magnetic field, but, there exist a finite resistance at the lowest temperature. The $R(T)$ broadening was explained by available phase slip models. At low field, and far below the superconducting critical temperature, the wires with diameter equal…
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We study magneto-transport properties of several amorphous Indium oxide nanowires of different widths. The wires show superconducting transition at zero magnetic field, but, there exist a finite resistance at the lowest temperature. The $R(T)$ broadening was explained by available phase slip models. At low field, and far below the superconducting critical temperature, the wires with diameter equal to or less than 100 nm, show negative magnetoresistance (nMR). The magnitude of nMR and the crossover field are found to be dependent on both temperature and the cross-sectional area. We find that this intriguing behavior originates from the interplay between two field dependent contributions.
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Submitted 28 November, 2016; v1 submitted 1 June, 2015;
originally announced June 2015.
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High field termination of a Cooper-pair insulator
Authors:
B. Sacepe,
J. Seidemann,
M. Ovadia,
I. Tamir,
D. Shahar,
C. Chapelier,
C. Strunk,
B. A. Piot
Abstract:
We conducted a systematic study of the disorder dependence of the termination of superconductivity, at high magnetic fields (B), of amorphous indium oxide films. Our lower disorder films show conventional behavior where superconductivity is terminated with a transition to a metallic state at a well-defined critical field, Bc2. Our higher disorder samples undergo a B-induced transition into a stron…
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We conducted a systematic study of the disorder dependence of the termination of superconductivity, at high magnetic fields (B), of amorphous indium oxide films. Our lower disorder films show conventional behavior where superconductivity is terminated with a transition to a metallic state at a well-defined critical field, Bc2. Our higher disorder samples undergo a B-induced transition into a strongly insulating state, which terminates at higher B's forming an insulating peak. We demonstrate that the B terminating this peak coincides with Bc2 of the lower disorder samples. Additionally we show that, beyond this field, these samples enter a different insulating state in which the magnetic field dependence of the resistance is weak. These results provide crucial evidence for the importance of Cooper-pairing in the insulating peak regime.
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Submitted 26 June, 2015; v1 submitted 2 April, 2015;
originally announced April 2015.
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Little-Parks Oscillations in a Single Ring in the vicinity of the Superconductor-Insulator Transition
Authors:
Doron Gurovich,
Konstantin S. Tikhonov,
Diana Mahalu,
Dan Shahar
Abstract:
We present results of measurements obtained from a mesoscopic ring of a highly disordered superconductor. Superimposed on a smooth magnetoresistance background we find periodic oscillations with a period that is independent of the strength of the magnetic field. The period of the oscillations is consistent with charge transport by Cooper pairs. The oscillations persist unabated for more than 90 pe…
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We present results of measurements obtained from a mesoscopic ring of a highly disordered superconductor. Superimposed on a smooth magnetoresistance background we find periodic oscillations with a period that is independent of the strength of the magnetic field. The period of the oscillations is consistent with charge transport by Cooper pairs. The oscillations persist unabated for more than 90 periods, through the transition to the insulating phase, up to our highest field of 12 T.
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Submitted 17 April, 2015; v1 submitted 20 November, 2014;
originally announced November 2014.
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Evidence for a Finite Temperature Insulator
Authors:
M. Ovadia,
D. Kalok,
I. Tamir,
S. Mitra,
B. Sacepe,
D. Shahar
Abstract:
In superconductors the zero-resistance current-flow is protected from dissipation at finite temperatures (T) by virtue of the short-circuit condition maintained by the electrons that remain in the condensed state. The recently suggested finite-T insulator and the "superinsulating" phase are different because any residual mechanism of conduction will eventually become dominant as the finite-T insul…
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In superconductors the zero-resistance current-flow is protected from dissipation at finite temperatures (T) by virtue of the short-circuit condition maintained by the electrons that remain in the condensed state. The recently suggested finite-T insulator and the "superinsulating" phase are different because any residual mechanism of conduction will eventually become dominant as the finite-T insulator sets-in. If the residual conduction is small it may be possible to observe the transition to these intriguing states. We show that the conductivity of the high magnetic-field insulator terminating superconductivity in amorphous indium-oxide exhibits an abrupt drop, and seem to approach a zero conductance at T<0.04 K. We discuss our results in the light of theories that lead to a finite-T insulator.
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Submitted 8 February, 2016; v1 submitted 29 June, 2014;
originally announced June 2014.
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Coherent quantum phase slip
Authors:
O. V. Astafiev,
L. B. Ioffe,
S. Kafanov,
Yu. A. Pashkin,
K. Yu. Arutyunov,
D. Shahar,
O. Cohen,
J. S. Tsai
Abstract:
A hundred years after discovery of superconductivity, one fundamental prediction of the theory, the coherent quantum phase slip (CQPS), has not been observed. CQPS is a phenomenon exactly dual to the Josephson effect: whilst the latter is a coherent transfer of charges between superconducting contacts, the former is a coherent transfer of vortices or fluxes across a superconducting wire. In contra…
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A hundred years after discovery of superconductivity, one fundamental prediction of the theory, the coherent quantum phase slip (CQPS), has not been observed. CQPS is a phenomenon exactly dual to the Josephson effect: whilst the latter is a coherent transfer of charges between superconducting contacts, the former is a coherent transfer of vortices or fluxes across a superconducting wire. In contrast to previously reported observations of incoherent phase slip, the CQPS has been only a subject of theoretical study. Its experimental demonstration is made difficult by quasiparticle dissipation due to gapless excitations in nanowires or in vortex cores. This difficulty might be overcome by using certain strongly disordered superconductors in the vicinity of the superconductor-insulator transition (SIT). Here we report the first direct observation of the CQPS in a strongly disordered indium-oxide (InOx) superconducting wire inserted in a loop, which is manifested by the superposition of the quantum states with different number of fluxes. Similarly to the Josephson effect, our observation is expected to lead to novel applications in superconducting electronics and quantum metrology.
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Submitted 19 April, 2012;
originally announced April 2012.
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A Superconducting Gap in an Insulator
Authors:
D. Sherman,
G. Kopnov,
D. Shahar,
A. Frydman
Abstract:
We present tunneling spectroscopy and transport measurements on disordered indium oxide films that reveal the existence of a superconducting gap in an insulating state. Two films on both sides of the disorder induced superconductor to insulator transition (SIT) show the same energy gap scale at low temperatures. This energy gap persists up to relatively high magnetic fields and is observed across…
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We present tunneling spectroscopy and transport measurements on disordered indium oxide films that reveal the existence of a superconducting gap in an insulating state. Two films on both sides of the disorder induced superconductor to insulator transition (SIT) show the same energy gap scale at low temperatures. This energy gap persists up to relatively high magnetic fields and is observed across the magnetoresistance peak typical of disordered superconductors. The results provide useful information for understanding the nature of the insulating state in the disorder induced SIT.
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Submitted 4 December, 2011;
originally announced December 2011.
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Electric breakdown effect in the current-voltage characteristics of amorphous indium oxide thin films near the superconductor-insulator transition
Authors:
O. Cohen,
M. Ovadia,
D. Shahar
Abstract:
Current-voltage characteristics in the insulator bordering superconductivity in disordered thin films exhibit current jumps of several orders of magnitude due to the development of a thermally bistable electronic state at very low temperatures. In this high-resolution study we find that the jumps can be composed of many (up to 100) smaller jumps that appear to be random. This indicates that inhomo…
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Current-voltage characteristics in the insulator bordering superconductivity in disordered thin films exhibit current jumps of several orders of magnitude due to the development of a thermally bistable electronic state at very low temperatures. In this high-resolution study we find that the jumps can be composed of many (up to 100) smaller jumps that appear to be random. This indicates that inhomogeneity develops near the transition to the insulator and that the current breakdown proceed via percolative paths spanning from one electrode to the other.
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Submitted 20 September, 2011;
originally announced September 2011.
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Localization of preformed Cooper-pairs in disordered superconductors
Authors:
B. Sacepe,
T. Dubouchet,
C. Chapelier,
M. Sanquer,
M. Ovadia,
D. Shahar,
M. Feigel'man,
L. Ioffe
Abstract:
The most profound effect of disorder on electronic systems is the localization of the electrons transforming an otherwise metallic system into an insulator. If the metal is also a superconductor then, at low temperatures, disorder can induce a dramatic transition from a superconducting into an insulating state. An outstanding question is whether the route to insulating behavior proceeds via the di…
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The most profound effect of disorder on electronic systems is the localization of the electrons transforming an otherwise metallic system into an insulator. If the metal is also a superconductor then, at low temperatures, disorder can induce a dramatic transition from a superconducting into an insulating state. An outstanding question is whether the route to insulating behavior proceeds via the direct localization of Cooper pairs or, alternatively, by a two-step process in which the Cooper pairing is first destroyed followed by the standard localization of single electrons. Here we address this question by studying the local superconducting gap of a highly disordered, amorphous, superconductor by means of scanning tunneling spectroscopy. Our measurements reveal that, in the vicinity of the superconductor-insulator transition, the coherence peaks in the one-particle density of states disappear while the superconducting gap remains intact indicating the presence of localized Cooper pairs. Our results provide the first direct evidence that the transition in our system is driven by Cooper pair localization.
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Submitted 16 December, 2010;
originally announced December 2010.
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Direct observation of quantum superconducting fluctuations in an insulating groundstate
Authors:
N. P. Armitage,
R. Crane,
G. Sambandamurthy,
A. Johansson,
D. Shahar,
G. Gruner
Abstract:
We review our recent measurements of the complex AC conductivity of thin InO_x films studied as a function of magnetic field through the nominal 2D superconductor-insulator transition. These measurements - the first of their type to probe nonzero frequency - reveals a significant finite frequency superfluid stiffness well into the insulating regime. Unlike conventional fluctuation superconductiv…
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We review our recent measurements of the complex AC conductivity of thin InO_x films studied as a function of magnetic field through the nominal 2D superconductor-insulator transition. These measurements - the first of their type to probe nonzero frequency - reveals a significant finite frequency superfluid stiffness well into the insulating regime. Unlike conventional fluctuation superconductivity in which thermal fluctuations give a superconducting response in regions of parameter space that don't exhibit long range order, these fluctuations are temperature independent as T --> 0 and are exhibited in samples where the resistance is large (greater than 10^6 Ohms/Square) and strongly diverging. We interpret this as the direct observation of quantum superconducting fluctuations around an insulating ground state. This system serves as a prototype for other insulating states of matter that derive from superconductors.
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Submitted 1 June, 2007;
originally announced June 2007.
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Fluctuations, dissipation, and nonuniversal superfluid jumps in two-dimensional superconductors
Authors:
R. W. Crane,
N. P. Armitage,
A. Johansson,
G. Sambandamurthy,
D. Shahar,
G. Gruner
Abstract:
We report a comprehensive study of the complex AC conductivity of thin effectively 2D amorphous superconducting InO_x films at zero applied field. Below a temperature scale T_c0 where the superconducting order parameter amplitude becomes well defined, there is a temperature where both the generalized superfluid stiffness acquires a frequency dependence and the DC mangetoresistance becomes linear i…
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We report a comprehensive study of the complex AC conductivity of thin effectively 2D amorphous superconducting InO_x films at zero applied field. Below a temperature scale T_c0 where the superconducting order parameter amplitude becomes well defined, there is a temperature where both the generalized superfluid stiffness acquires a frequency dependence and the DC mangetoresistance becomes linear in field. We associate this with a transition of the Kosterlitz-Thouless-Berezinskii (KTB) type. At our measurement frequencies the superfluid stiffness at T_KTB is found to be larger than the universal value. Although this may be understood with a vortex dielectric constant of epsilon_v ~ 1.9 within the usual KTB theory, this is a relatively large value and indicates that such a system may be out of the domain of applicability of the low-fugacity (low vortex density) KTB treatment. This opens up the possibility that at least some of the discrepancy from a non-universal magnitude is intrinsic. Our finite frequency measurements allow us access to a number of other phenomena concerning the charge dynamics in superconducting thin films, including an enhanced conductivity near the amplitude fluctuation temperature T_c0 and a finite dissipation at low temperature which appears to be a universal aspect of highly disordered superconducting films.
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Submitted 15 September, 2010; v1 submitted 4 December, 2006;
originally announced December 2006.
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Survival of superconducting correlations across the 2D superconductor-insulator transition: A finite frequency study
Authors:
R. W. Crane,
N. P. Armitage,
A. Johansson,
G. Sambandamurthy,
D. Shahar,
G. Gruner
Abstract:
The complex ac conductivity of thin highly disordered InOx films was studied as a function of magnetic field through the nominal two-dimensional superconductor-insulator transition. We have resolved a significant finite-frequency superfluid stiffness well into the insulating regime, giving direct evidence for quantum superconducting fluctuations around an insulating ground state and a state of mat…
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The complex ac conductivity of thin highly disordered InOx films was studied as a function of magnetic field through the nominal two-dimensional superconductor-insulator transition. We have resolved a significant finite-frequency superfluid stiffness well into the insulating regime, giving direct evidence for quantum superconducting fluctuations around an insulating ground state and a state of matter with localized Cooper pairs. A phase diagram is established that includes the superconducting state, a transition to a "Bose" insulator, and an eventual crossover to a "Fermi" insulating state at high fields. We speculate on the consequences of these observations, their impact on our understanding of the insulating state, and its relevance as a prototype for other insulating states of matter that derive from superconductors.
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Submitted 15 September, 2010; v1 submitted 4 April, 2006;
originally announced April 2006.
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Angular dependence of the magnetic-field driven superconductor-insulator transition in thin films of amorphous indium-oxide
Authors:
A. Johansson,
N. Stander,
E. Peled,
G. Sambandamurthy,
D. Shahar
Abstract:
A significant anisotropy of the magnetic-field driven superconductor-insulator transition is observed in thin films of amorphous indium-oxide. The anisotropy is largest for more disordered films which have a lower transition field. At higher magnetic field the anisotropy reduces and even changes sign beyond a sample specific and temperature independent magnetic field value. The data are consiste…
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A significant anisotropy of the magnetic-field driven superconductor-insulator transition is observed in thin films of amorphous indium-oxide. The anisotropy is largest for more disordered films which have a lower transition field. At higher magnetic field the anisotropy reduces and even changes sign beyond a sample specific and temperature independent magnetic field value. The data are consistent with the existence of more that one mechanism affecting transport at high magnetic fields.
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Submitted 6 February, 2006;
originally announced February 2006.
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Two-Dimensional Electron Gas in InGaAs/InAlAs Quantum Wells
Authors:
E. Diez,
Y. P. Chen,
S. Avesque,
M. Hilke,
E. Peled,
D. Shahar,
J. M. Cervero,
D. L. Sivco,
A. Y. Cho
Abstract:
We designed and performed low temperature DC transport characterization studies on two-dimensional electron gases confined in lattice-matched In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells grown by molecular beam epitaxy on InP substrates. The nearly constant mobility for samples with the setback distance larger than 50nm and the similarity between the quantum and transport life…
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We designed and performed low temperature DC transport characterization studies on two-dimensional electron gases confined in lattice-matched In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells grown by molecular beam epitaxy on InP substrates. The nearly constant mobility for samples with the setback distance larger than 50nm and the similarity between the quantum and transport life-time suggest that the main scattering mechanism is due to short range scattering, such as alloy scattering, with a scattering rate of 2.2 ps$^{-1}$. We also obtain the Fermi level at the In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As surface to be 0.36eV above the conduction band, when fitting our experimental densities with a Poisson-Schrödinger model.
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Submitted 12 January, 2006;
originally announced January 2006.
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Nanowire Acting as a Superconducting Quantum Interference Device
Authors:
A. Johansson,
G. Sambandamurthy,
N. Jacobson,
D. Shahar,
R. Tenne
Abstract:
We present the results from an experimental study of the magneto-transport of superconducting wires of amorphous Indium-Oxide, having widths in the range 40 - 120 nm. We find that, below the superconducting transition temperature, the wires exhibit clear, reproducible, oscillations in their resistance as a function of magnetic field. The oscillations are reminiscent of those which underlie the o…
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We present the results from an experimental study of the magneto-transport of superconducting wires of amorphous Indium-Oxide, having widths in the range 40 - 120 nm. We find that, below the superconducting transition temperature, the wires exhibit clear, reproducible, oscillations in their resistance as a function of magnetic field. The oscillations are reminiscent of those which underlie the operation of a superconducting quantum interference device.
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Submitted 24 May, 2005;
originally announced May 2005.
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Power law resistivity behavior in 2D superconductors across the magnetic-field tuned superconductor-insulator transition
Authors:
G. Sambandamurthy,
A. Johansson,
E. Peled,
D. Shahar,
P. G. Bjornsson,
K. A. Moler
Abstract:
We present the results of a systematic study of thin-films of amorphous indium-oxide near the superconductor-insulator transition. We show that the film's resistivity follows a simple, well-defined, power-law dependence on the perpendicular magnetic field. This dependence holds well into the insulating state. Our results indicate that vortices play a central role in the transport of our films in…
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We present the results of a systematic study of thin-films of amorphous indium-oxide near the superconductor-insulator transition. We show that the film's resistivity follows a simple, well-defined, power-law dependence on the perpendicular magnetic field. This dependence holds well into the insulating state. Our results indicate that vortices play a central role in the transport of our films in the superconducting as well as insulating phases.
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Submitted 4 August, 2006; v1 submitted 28 October, 2004;
originally announced October 2004.
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Symmetries of the Resistance of Mesoscopic Samples in the Quantum Hall Regime
Authors:
E. Peled,
Y. Chen,
E. Diez,
D. C. Tsui,
D. Shahar,
D. L. Sivco,
A. Y. Cho
Abstract:
The symmetry properties of the resistance of mesoscopic samples in the quantum Hall regime are investigated. In addition to the reciprocity relation, our samples obey new symmetries, that relate resistances measured with different contact configurations. Different kinds of symmetries are identified, depending on whether the magnetic field value is such that the system is above, or below, a quant…
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The symmetry properties of the resistance of mesoscopic samples in the quantum Hall regime are investigated. In addition to the reciprocity relation, our samples obey new symmetries, that relate resistances measured with different contact configurations. Different kinds of symmetries are identified, depending on whether the magnetic field value is such that the system is above, or below, a quantum Hall transition. Related symmetries have recently been reported for macroscopic samples in the quantum Hall regime by Ponomarenko {\it et al.} (Solid State Commun. {\bf 130}, 705 (2004)), and Karmakar {\it et al.} (Preprint cond-mat/0309694).
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Submitted 20 July, 2004;
originally announced July 2004.
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Experimental evidence for a collective insulating state in two-dimensional superconductors
Authors:
G. Sambandamurthy,
L. W. Engel,
A. Johansson,
E. Peled,
D. Shahar
Abstract:
We present the results of an experimental study of the current-voltage characteristics in strong magnetic field ($B$) of disordered, superconducting, thin-films of amorphous Indium-Oxide. As the $B$ strength is increased superconductivity degrades, until a critical field ($B_c$) where the system is forced into an insulating state. We show that the differential conductance measured in the insulat…
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We present the results of an experimental study of the current-voltage characteristics in strong magnetic field ($B$) of disordered, superconducting, thin-films of amorphous Indium-Oxide. As the $B$ strength is increased superconductivity degrades, until a critical field ($B_c$) where the system is forced into an insulating state. We show that the differential conductance measured in the insulating phase vanishes abruptly below a well-defined temperature, resulting in a clear threshold for conduction. Our results indicate that a new collective state emerges in two-dimensional superconductors at high $B$.
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Submitted 13 January, 2005; v1 submitted 18 March, 2004;
originally announced March 2004.
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Superconductivity-Related Insulating Behavior
Authors:
G. Sambandamurthy,
L. W. Engel,
A. Johansson,
D. Shahar
Abstract:
We present the results of an experimental study of superconducting, disordered, thin-films of amorphous Indium Oxide. These films can be driven from the superconducting phase to a reentrant insulating state by the application of a perpendicular magnetic field ($B$). We find that the high-$B$ insulator exhibits activated transport with a characteristic temperature, $T_I$. $T_I$ has a maximum valu…
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We present the results of an experimental study of superconducting, disordered, thin-films of amorphous Indium Oxide. These films can be driven from the superconducting phase to a reentrant insulating state by the application of a perpendicular magnetic field ($B$). We find that the high-$B$ insulator exhibits activated transport with a characteristic temperature, $T_I$. $T_I$ has a maximum value ($T_{I}^p$) that is close to the superconducting transition temperature ($T_c$) at $B$ = 0, suggesting a possible relation between the conduction mechanisms in the superconducting and insulating phases. $T_{I}^p$ and $T_c$ display opposite dependences on the disorder strength.
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Submitted 18 February, 2004; v1 submitted 25 July, 2003;
originally announced July 2003.
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Near-Perfect Correlation of the Resistance Components of Mesoscopic Samples at the Quantum Hall Regime
Authors:
E. Peled,
D. Shahar,
Y. Chen,
E. Diez,
D. L. Sivco,
A. Y. Cho
Abstract:
We study the four-terminal resistance fluctuations of mesoscopic samples near the transition between the $ν=2$ and the $ν=1$ quantum Hall states. We observe near-perfect correlations between the fluctuations of the longitudinal and Hall components of the resistance. These correlated fluctuations appear in a magnetic-field range for which the two-terminal resistance of the samples is quantized. W…
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We study the four-terminal resistance fluctuations of mesoscopic samples near the transition between the $ν=2$ and the $ν=1$ quantum Hall states. We observe near-perfect correlations between the fluctuations of the longitudinal and Hall components of the resistance. These correlated fluctuations appear in a magnetic-field range for which the two-terminal resistance of the samples is quantized. We discuss these findings in light of edge-state transport models of the quantum Hall effect. We also show that our results lead to an ambiguity in the determination of the width of quantum Hall transitions.
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Submitted 10 December, 2003; v1 submitted 17 July, 2003;
originally announced July 2003.
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The quantized Hall effect in the presence of resistance fluctuations
Authors:
E. Peled,
D. Shahar,
Y. Chen,
D. L. Sivco,
A. Y. Cho
Abstract:
We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations. Focusing on the lowest Landau level we find that, while the diagonal resistivity displays strong fluctuations, the Hall resistivity is free of fluctuations and rem…
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We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations. Focusing on the lowest Landau level we find that, while the diagonal resistivity displays strong fluctuations, the Hall resistivity is free of fluctuations and remains quantized at its $ν=1$ value, $h/e^{2}$. This is true also in the insulating phase that terminates the quantum Hall series. These results extend the validity of the semicircle law of conductivity in the quantum Hall effect to the mesoscopic regime.
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Submitted 24 December, 2002; v1 submitted 24 May, 2002;
originally announced May 2002.
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Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs
Authors:
Jongsoo Yoon,
C. C. Li,
D. Shahar,
D. C. Tsui,
M. Shayegan
Abstract:
A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well defined transition. The value of resistivity at the transition is found to depend strongly on density.
A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well defined transition. The value of resistivity at the transition is found to depend strongly on density.
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Submitted 9 July, 1999; v1 submitted 8 July, 1999;
originally announced July 1999.
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Phase diagram of the integer quantum Hall effect in p-type Germanium
Authors:
M. Hilke,
D. Shahar,
S. H. Song,
D. C. Tsui,
Y. H. Xie
Abstract:
We experimentally study the phase diagram of the integer quantized Hall effect, as a function of density and magnetic field. We used a two dimensional hole system confined in a Ge/SiGe quantum well, where all energy levels are resolved, because the Zeeman splitting is comparable to the cyclotron energy. At low fields and close to the quantum Hall liquid-to-insulator transition, we observe the fl…
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We experimentally study the phase diagram of the integer quantized Hall effect, as a function of density and magnetic field. We used a two dimensional hole system confined in a Ge/SiGe quantum well, where all energy levels are resolved, because the Zeeman splitting is comparable to the cyclotron energy. At low fields and close to the quantum Hall liquid-to-insulator transition, we observe the floating up of the lowest energy level, but NO FLOATING of any higher levels, rather a merging of these levels into the insulating state. For a given filling factor, only direct transitions between the insulating phase and higher quantum Hall liquids are observed as a function of density. Finally, we observe a peak in the critical resistivity around filling factor one.
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Submitted 28 September, 1999; v1 submitted 15 June, 1999;
originally announced June 1999.
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From the magnetic-field-driven transitions to the zero-field transition in two-dimensions
Authors:
Y. Hanein,
D. Shahar,
Hadas Shtrikman,
J. Yoon,
C. C. Li,
D. C. Tsui
Abstract:
For more than a decade it was widely accepted that two-dimensional electrons are insulating at zero temperature and at zero magnetic-field. Experimentally it was demonstrated that, when placed in a strong perpendicular magnetic field, the insulating phase turns into a quantum-Hall state. While this transition was in accordance with existing theoretical models (KLZ), the density driven metal-insu…
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For more than a decade it was widely accepted that two-dimensional electrons are insulating at zero temperature and at zero magnetic-field. Experimentally it was demonstrated that, when placed in a strong perpendicular magnetic field, the insulating phase turns into a quantum-Hall state. While this transition was in accordance with existing theoretical models (KLZ), the density driven metal-insulator transition at zero magnetic-field, recently observed in high-quality two-dimensional systems, was unforeseen and, despite considerable amount of effort, its origins are still unknown. In order to improve our understanding of the zero magnetic-field transition, we conducted a study of the insulator to quantum-Hall transition in low-density, two-dimensional, hole system in GaAs that exhibits the zero magnetic-field metal-insulator transition. We found that, in the low field insulating phase, upon increasing the carrier density towards the metal-insulator transition, the critical magnetic-field of the insulator to quantum-Hall transition decreases and converges to the zero magnetic-field metal-insulator transition. This implies a common origin for both the finite magnetic-field and the zero magnetic-field transitions.
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Submitted 19 January, 1999;
originally announced January 1999.
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Semicircle: An exact relation in the Integer and Fractional Quantum Hall Effect
Authors:
M. Hilke,
D. Shahar,
S. H. Song,
D. C. Tsui,
Y. H. Xie,
M. Shayegan
Abstract:
We present experimental results on the quantized Hall insulator in two dimensions. This insulator, with vanishing conductivities, is characterized by the quantization (within experimental accuracy) of the Hall resistance in units of the quantum unit of resistance, h/e^2. The measurements were performed in a two dimensional hole system, confined in a Ge/SiGe quantum well, when the magnetic field…
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We present experimental results on the quantized Hall insulator in two dimensions. This insulator, with vanishing conductivities, is characterized by the quantization (within experimental accuracy) of the Hall resistance in units of the quantum unit of resistance, h/e^2. The measurements were performed in a two dimensional hole system, confined in a Ge/SiGe quantum well, when the magnetic field is increased above the nu=1 quantum Hall state. This quantization leads to a nearly perfect semi-circle relation for the diagonal and Hall conductivities. Similar results are obtained with a higher mobility n-type modulation doped GaAs/AlGaAs sample, when the magnetic field is increased above the nu=1/3 fractional quantum Hall state.
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Submitted 18 October, 1998;
originally announced October 1998.
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The Quantized Hall Insulator: A New Insulator in Two-Dimensions
Authors:
M. Hilke,
D. Shahar,
S. H. Song,
D. C. Tsui,
Y. H. Xie,
Don Monroe
Abstract:
Quite generally, an insulator is theoretically defined by a vanishing conductivity tensor at the absolute zero of temperature. In classical insulators, such as band insulators, vanishing conductivities lead to diverging resistivities. In other insulators, in particular when a high magnetic field (B) is added, it is possible that while the magneto-resistance diverges, the Hall resistance remains…
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Quite generally, an insulator is theoretically defined by a vanishing conductivity tensor at the absolute zero of temperature. In classical insulators, such as band insulators, vanishing conductivities lead to diverging resistivities. In other insulators, in particular when a high magnetic field (B) is added, it is possible that while the magneto-resistance diverges, the Hall resistance remains finite, which is known as a Hall insulator. In this letter we demonstrate experimentally the existence of another, more exotic, insulator. This insulator, which terminates the quantum Hall effect series in a two-dimensional electron system, is characterized by a Hall resistance which is approximately quantized in the quantum unit of resistance h/e^2. This insulator is termed a quantized Hall insulator. In addition we show that for the same sample, the insulating state preceding the QHE series, at low-B, is of the HI kind.
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Submitted 15 October, 1998;
originally announced October 1998.
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Microwave Resonance and Carrier-Carrier Interaction in Two-Dimensional Hole Systems at High Magnetic Field
Authors:
C. -C. Li,
J. Yoon,
L. W. Engel,
D. Shahar,
D. C. Tsui,
M. Shayegan
Abstract:
Microwave frequency conductivity, Re($σ_{xx}$), of high quality two-dimensional hole systems (2DHS) in a large perpendicular magnetic field (B) is measured with the carrier density ($n_s$) of the 2DHS controlled by a backgate bias. The high B insulating phase of the 2DHS exhibits a microwave resonance that remains well-defined, but shifts to higher peak frequency ($f_{pk}$) as $n_s$ is reduced.…
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Microwave frequency conductivity, Re($σ_{xx}$), of high quality two-dimensional hole systems (2DHS) in a large perpendicular magnetic field (B) is measured with the carrier density ($n_s$) of the 2DHS controlled by a backgate bias. The high B insulating phase of the 2DHS exhibits a microwave resonance that remains well-defined, but shifts to higher peak frequency ($f_{pk}$) as $n_s$ is reduced. Over a wide range of $n_s, f_{pk} \propto n_s^{-1/2}$ is observed for the two samples we measured. The data clearly indicate that both carrier-carrier interactions and disorder are indispensable in determining the dynamics of the insulator. The $n_s$ dependence of $f_{pk}$ is consistent with a weakly pinned Wigner crystal in which domain size increases with $n_s$, due to larger carrier-carrier interaction.
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Submitted 6 October, 1998;
originally announced October 1998.
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Observation of the Metal-Insulator Transition in Two-Dimensional n-type GaAs
Authors:
Y. Hanein,
D. Shahar,
J. Yoon,
C. C. Li,
D. C. Tsui,
Hadas Shtrikman
Abstract:
The observation of a carrier-density driven metal-insulator transition in n-type GaAs-based heterostructure is reported. Although weaker than in comparable-quality p-type GaAs samples, the main features of the transition are rather similar.
The observation of a carrier-density driven metal-insulator transition in n-type GaAs-based heterostructure is reported. Although weaker than in comparable-quality p-type GaAs samples, the main features of the transition are rather similar.
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Submitted 24 August, 1998;
originally announced August 1998.
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Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs/AlGaAs at B=0
Authors:
Jongsoo Yoon,
C. C. Li,
D. Shahar,
D. C. Tsui,
M. Shayegan
Abstract:
We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of $7\times 10^5cm^2/Vs$, with hole density of $4.8\times 10^9 cm^{-2}<p<3.72\times 10^{10}cm^{-2}$ in the temperature range of $50mK<T<1.3K$. From their T, p, and electric field dependences, we find that the metal-insulator t…
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We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of $7\times 10^5cm^2/Vs$, with hole density of $4.8\times 10^9 cm^{-2}<p<3.72\times 10^{10}cm^{-2}$ in the temperature range of $50mK<T<1.3K$. From their T, p, and electric field dependences, we find that the metal-insulator transition in zero magnetic field in this exceptionally clean 2DHS occurs at $r_s=35.1\pm0.9$, which is in good agreement with the critical $r_s$ for Wigner crystallization ${r_s}^c=37\pm 5$, predicted by Tanatar and Ceperley for an ideally clean 2D system.
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Submitted 22 July, 1998; v1 submitted 15 July, 1998;
originally announced July 1998.
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Universality at integer quantum Hall transitions
Authors:
Kun Yang,
D. Shahar,
R. N. Bhatt,
D. C. Tsui,
M. Shayegan
Abstract:
We report in this paper results of experimental and theoretical studies of transitions between different integer quantum Hall phases, as well as transition between the insulating phase and quantum Hall phases at high magnetic fields. We focus mainly on universal properties of the transitions. We demonstrate that properly defined conductivity tensor is universal at the transitions. We also presen…
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We report in this paper results of experimental and theoretical studies of transitions between different integer quantum Hall phases, as well as transition between the insulating phase and quantum Hall phases at high magnetic fields. We focus mainly on universal properties of the transitions. We demonstrate that properly defined conductivity tensor is universal at the transitions. We also present numerical results of a non-interacting electron model, which suggest that the Thouless conductance is universal at integer quantum Hall transitions, just like the conductivity tensor. Finite temperature and system size effects near the transition point are also studied.
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Submitted 26 May, 1998;
originally announced May 1998.
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Novel Properties of The Apparent Metal-Insulator Transition in Two-Dimensional Systems
Authors:
Y. Hanein,
D. Shahar,
J. Yoon,
C. C. Li,
D. C. Tsui,
Hadas Shtrikman
Abstract:
The low-temperature conductivity of low-density, high-mobility, two-dimensional hole systems in GaAs was studied. We explicitly show that the metal-insulator transition, observed in these systems, is characterized by a well-defined critical density, p_0c. We also observe that the low-temperature conductivity of these systems depends linearly on the hole density, over a wide density range. The hi…
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The low-temperature conductivity of low-density, high-mobility, two-dimensional hole systems in GaAs was studied. We explicitly show that the metal-insulator transition, observed in these systems, is characterized by a well-defined critical density, p_0c. We also observe that the low-temperature conductivity of these systems depends linearly on the hole density, over a wide density range. The high-density linear conductivity extrapolates to zero at a density close to the critical density.
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Submitted 17 July, 1998; v1 submitted 10 May, 1998;
originally announced May 1998.
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The Metallic-Like Conductivity of a Two-Dimensional Hole System
Authors:
Y. Hanein,
U. Meirav,
D. Shahar,
C. C. Li,
D. C. Tsui,
Hadas Shtrikman
Abstract:
We report on a zero magnetic field transport study of a two-dimensional, variable-density, hole system in GaAs. As the density is varied we observe, for the first time in GaAs-based materials, a crossover from an insulating behavior at low-density, to a metallic-like behavior at high-density, where the metallic behavior is characterized by a large drop in the resistivity as the temperature is lo…
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We report on a zero magnetic field transport study of a two-dimensional, variable-density, hole system in GaAs. As the density is varied we observe, for the first time in GaAs-based materials, a crossover from an insulating behavior at low-density, to a metallic-like behavior at high-density, where the metallic behavior is characterized by a large drop in the resistivity as the temperature is lowered. These results are in agreement with recent experiments on Si-based two-dimensional systems by Kravchenko et al. and others. We show that, in the metallic region, the resistivity is dominated by an exponential temperature-dependence with a characteristic temperature which is proportional to the hole density, and appear to reach a constant value at lower temperatures.
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Submitted 18 September, 1997; v1 submitted 16 September, 1997;
originally announced September 1997.
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Symmetry in the insulator - quantum Hall - insulator transitions observed in a Ge/SiGe quantum well
Authors:
M. Hilke,
D. Shahar,
S. H. Song,
D. C. Tsui,
Y. H. Xie,
Don Monroe
Abstract:
We examine the magnetic field driven insulator-quantum Hall-insulator transitions of the two dimensional hole gas in a Ge/SiGe quantum well. We observe direct transitions between low and high magnetic field insulators and the $ν=1$ quantum Hall state. With increasing magnetic field, the transitions from insulating to quantum Hall and quantum Hall to insulating are very similar with respect to th…
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We examine the magnetic field driven insulator-quantum Hall-insulator transitions of the two dimensional hole gas in a Ge/SiGe quantum well. We observe direct transitions between low and high magnetic field insulators and the $ν=1$ quantum Hall state. With increasing magnetic field, the transitions from insulating to quantum Hall and quantum Hall to insulating are very similar with respect to their transport properties. We address the temperature dependence around the transitions and show that the characteristic energy scale for the high field transition is larger.
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Submitted 29 August, 1997; v1 submitted 29 August, 1997;
originally announced August 1997.
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A New Transport Regime in the Quantum Hall Effect
Authors:
D. Shahar,
M. Hilke,
C. C. Li,
D. C. Tsui,
S. L. Sondhi,
M. Razeghi
Abstract:
This paper describes an experimental identification and characterization of a new low temperature transport regime near the quantum Hall-to-insulator transition. In this regime, a wide range of transport data are compactly described by a simple phenomenological form which, on the one hand, is inconsistent with either quantum Hall or insulating behavior and, on the other hand, is also clearly at…
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This paper describes an experimental identification and characterization of a new low temperature transport regime near the quantum Hall-to-insulator transition. In this regime, a wide range of transport data are compactly described by a simple phenomenological form which, on the one hand, is inconsistent with either quantum Hall or insulating behavior and, on the other hand, is also clearly at odds with a quantum-critical, or scaling, description. We are unable to determine whether this new regime represents a clearly defined state or is a consequence of finite temperature and sample-size measurements.
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Submitted 5 June, 1997;
originally announced June 1997.
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A different view of the quantum Hall plateau-to-plateau transitions
Authors:
D. Shahar,
D. C. Tsui,
M. Shayegan,
E. Shimshoni,
S. L. Sondhi
Abstract:
We demonstrate experimentally that the transitions between adjacent integer quantum Hall (QH) states are equivalent to a QH-to-insulator transition occurring in the top Landau level, in the presence of an inert background of the other completely filled Landau levels, each contributing a single unit of quantum conductance, $e^{2}/h$, to the total Hall conductance of the system.
We demonstrate experimentally that the transitions between adjacent integer quantum Hall (QH) states are equivalent to a QH-to-insulator transition occurring in the top Landau level, in the presence of an inert background of the other completely filled Landau levels, each contributing a single unit of quantum conductance, $e^{2}/h$, to the total Hall conductance of the system.
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Submitted 2 November, 1996;
originally announced November 1996.
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Duality Near Quantum Hall Transitions
Authors:
E. Shimshoni,
S. L. Sondhi,
D. Shahar
Abstract:
A recent experiment by Shahar et al, on the phase transitions between quantum Hall states and the insulator, found that the current-voltage characteristics in the two phases are related by symmetry. It was suggested in this work that this is evidence for charge-flux duality near quantum Hall transitions. Here we provide details of this analysis. (Appearances notwithstanding, this is a theoretica…
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A recent experiment by Shahar et al, on the phase transitions between quantum Hall states and the insulator, found that the current-voltage characteristics in the two phases are related by symmetry. It was suggested in this work that this is evidence for charge-flux duality near quantum Hall transitions. Here we provide details of this analysis. (Appearances notwithstanding, this is a theoretical paper.)
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Submitted 12 October, 1996;
originally announced October 1996.