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Magnetic oscillations Excited by Concurrent Spin Injection from a Tunneling Current and a Spin Hall Current
Authors:
M. Tarequzzaman,
T. Böhnert,
M. Decker,
J. D. Costa,
J. Borme,
B. Lacoste,
E. Paz,
A. S. Jenkins,
S. Serrano-Guisan,
C. H. Back,
R. Ferreira,
P. P. Freitas
Abstract:
In this paper, a 3-terminal spin-transfer torque nano-oscillator (STNO) is studied using the concurrent spin injection of a spin-polarized tunneling current and a spin Hall current exciting the free layer into dynamic regimes beyond what is achieved by each individual mechanism. The pure spin injection is capable of inducing oscillations in the absence of charge currents effectively reducing the c…
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In this paper, a 3-terminal spin-transfer torque nano-oscillator (STNO) is studied using the concurrent spin injection of a spin-polarized tunneling current and a spin Hall current exciting the free layer into dynamic regimes beyond what is achieved by each individual mechanism. The pure spin injection is capable of inducing oscillations in the absence of charge currents effectively reducing the critical tunneling current to zero. This reduction of the critical charge currents can improve the endurance of both STNOs and non-volatile magnetic memories (MRAM) devices. It is shown that the system response can be described in terms of an injected spin current density $J_s$ which results from the contribution of both spin injection mechanisms, with the tunneling current polarization $p$ and the spin Hall angle $θ$ acting as key parameters determining the efficiency of each injection mechanism. The experimental data exhibits an excellent agreement with this model which can be used to quantitatively predict the critical points ($J_s = -2.26\pm 0.09 \times 10^9 \hbar/e$ A/m$^2$) and the oscillation amplitude as a function of the input currents. In addition, the fitting of the data also allows an independent confirmation of the values estimated for the spin Hall angle and tunneling current polarization as well as the extraction of the damping $α= 0.01$ and non-linear damping $Q = 3.8\pm 0.3$ parameters.
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Submitted 6 February, 2018;
originally announced February 2018.
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Towards wafer scale inductive characterization of spin transfer torque critical current density of magnetic tunnel junction stacks
Authors:
Sibylle Sievers,
Niklas Liebing,
Santiago Serrano-Guisan,
Ricardo Ferreira,
Elvira Paz,
Ambra Caprile,
Alessandra Manzin,
Massimo Pasquale,
Witold Skowroński,
Tomasz Stobiecki,
Karsten Rott,
Günter Reiss,
Jürgen Langer,
Berthold Ocker,
Hans Werner Schumacher
Abstract:
We explore the prospects of wafer scale inductive probing of the critical current density $j^{c0}$ for spin transfer torque switching of a CoFeB/MgO/CoFeB magnetic tunnel junction with varying MgO thickness. From inductive measurements magnetostatic parameters and the effective damping are derived and $j^{c0}$ is calculated based on spin transfer torque equations. The inductive values compare well…
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We explore the prospects of wafer scale inductive probing of the critical current density $j^{c0}$ for spin transfer torque switching of a CoFeB/MgO/CoFeB magnetic tunnel junction with varying MgO thickness. From inductive measurements magnetostatic parameters and the effective damping are derived and $j^{c0}$ is calculated based on spin transfer torque equations. The inductive values compare well to the values derived from current induced switching measurements on individual nanopillars. Using a wafer scale inductive probe head could in the future enable wafer probe station based metrology of $j^{c0}$.
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Submitted 18 November, 2014;
originally announced November 2014.
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Magneto-thermoelectric figure of merit of Co/Cu multilayers
Authors:
X. K. Hu,
P. Krzysteczko,
N. Liebing,
S. Serrano-Guisan,
K. Rott,
G. Reiss,
J. Kimling,
T. Böhnert,
K. Nielsch,
H. W. Schumacher
Abstract:
The switching of the magnetization configurations of giant magnetoresistance multilayer stacks not only changes the electric and thermal conductivities, but also the thermopower. We study the magnetotransport and the magneto-thermoelectric properties of Co/Cu multilayer devices in a lateral thermal gradient. We derive values of the Seebeck coefficient, the thermoelectric figure of merit, and the t…
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The switching of the magnetization configurations of giant magnetoresistance multilayer stacks not only changes the electric and thermal conductivities, but also the thermopower. We study the magnetotransport and the magneto-thermoelectric properties of Co/Cu multilayer devices in a lateral thermal gradient. We derive values of the Seebeck coefficient, the thermoelectric figure of merit, and the thermoelectric power factor. The Seebeck coefficient reaches values up to -18 microvolt/K at room temperature and shows a magnetic field dependence up to 28.6 % upon spin reversal. In combination with thermal conductivity data of the same Co/Cu stack, we find a spin dependence of the thermoelectric figure of merit of up to 65 %. Furthermore, a spin dependence of the power factor of up to 110 % is derived.
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Submitted 13 November, 2013;
originally announced November 2013.
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Unusual angular dependence of tunneling magneto-Seebeck effect
Authors:
Christian Heiliger,
Michael Czerner,
Niklas Liebing,
Santiago Serrano-Guisan,
Karsten Rott,
Günter Reiss,
Hans W. Schumacher
Abstract:
We find an unusual angular dependence of the tunneling magneto-Seebeck effect (TMS). The conductance shows normally a cosine-dependence with the angle between the magnetizations of the two ferromagnetic leads. In contrast, the angular dependence of the TMS depends strongly on the tunneling magneto resistance (TMR) ratio. For small TMR ratios we obtain also a cosine-dependence whereas for very larg…
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We find an unusual angular dependence of the tunneling magneto-Seebeck effect (TMS). The conductance shows normally a cosine-dependence with the angle between the magnetizations of the two ferromagnetic leads. In contrast, the angular dependence of the TMS depends strongly on the tunneling magneto resistance (TMR) ratio. For small TMR ratios we obtain also a cosine-dependence whereas for very large TMR ratios the angular dependence approaches a step-like function.
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Submitted 12 November, 2013;
originally announced November 2013.
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Influence of sample geometry on inductive damping measurement methods
Authors:
N. Liebing,
S. Serrano-Guisan,
A. Caprile,
E. S. Olivetti,
F. Celegato,
M. Pasquale,
A. Müller,
H. W. Schumacher
Abstract:
We study the precession frequency and effective damping of patterned permalloy thin films of different geometry using integrated inductive test structures. The test structures consist of coplanar wave guides fabricated onto patterned permalloy stripes of different geometry. The width, length and position of the permalloy stripe with respect to the center conductor of the wave guide are varied. The…
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We study the precession frequency and effective damping of patterned permalloy thin films of different geometry using integrated inductive test structures. The test structures consist of coplanar wave guides fabricated onto patterned permalloy stripes of different geometry. The width, length and position of the permalloy stripe with respect to the center conductor of the wave guide are varied. The precession frequency and effective damping of the different devices is derived by inductive measurements in time and frequency domain in in-plane magnetic fields. While the precession frequencies do not reveal a significant dependence on the sample geometry we find a decrease of the measured damping with increasing width of the permalloy centered underneath the center conductor of the coplanar wave guide. We attribute this effect to an additional damping contribution due to inhomogeneous line broadening at the edges of the permalloy stripes which does not contribute to the inductive signal provided the permalloy stripe is wider than the center conductor. Consequences for inductive determination of the effective damping using such integrated reference samples are discussed.
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Submitted 29 October, 2013;
originally announced October 2013.
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Towards wafer scale inductive determination of magnetostatic and dynamic parameters of magnetic thin films and multilayers
Authors:
Sibylle Sievers,
Niklas Liebing,
Paul Nass,
Santiago Serrano-Guisan,
Massimo Pasquale,
Hans Werner Schumacher
Abstract:
We investigate an inductive probe head suitable for non-invasive characterization of the magnetostatic and dynamic parameters of magnetic thin films and multilayers on the wafer scale. The probe is based on a planar waveguide with rearward high frequency connectors that can be brought in close contact to the wafer surface. Inductive characterization of the magnetic material is carried out by vecto…
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We investigate an inductive probe head suitable for non-invasive characterization of the magnetostatic and dynamic parameters of magnetic thin films and multilayers on the wafer scale. The probe is based on a planar waveguide with rearward high frequency connectors that can be brought in close contact to the wafer surface. Inductive characterization of the magnetic material is carried out by vector network analyzer ferromagnetic resonance. Analysis of the field dispersion of the resonance allows the determination of key material parameters such as the saturation magnetization MS or the effective damping parameter Meff. Three waveguide designs are tested. The broadband frequency response is characterized and the suitability for inductive determination of MS and Meff is compared. Integration of such probes in a wafer prober could in the future allow wafer scale in-line testing of magnetostatic and dynamic key material parameters of magnetic thin films and multilayers.
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Submitted 24 October, 2013;
originally announced October 2013.
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Tunneling magneto thermocurrent in CoFeB/MgO/CoFeB based magnetic tunnel junctions
Authors:
Niklas Liebing,
Santiago Serrano-Guisan,
Patryk Krzysteczko,
Karsten Rott,
Günter Reiss,
Jürgen Langer,
Berthold Ocker,
Hans Werner Schumacher
Abstract:
We study the tunneling magneto thermopower and tunneling magneto thermocurrent of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ). The devices show a clear change of the thermoelectric properties upon reversal of the magnetisation of the CoFeB layers from parallel to the antiparallel orientation. When switching from parallel to antiparallel the thermopower increases by up to 55% where as the therm…
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We study the tunneling magneto thermopower and tunneling magneto thermocurrent of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ). The devices show a clear change of the thermoelectric properties upon reversal of the magnetisation of the CoFeB layers from parallel to the antiparallel orientation. When switching from parallel to antiparallel the thermopower increases by up to 55% where as the thermocurrent drops by 45%. These observations can be well explained by the Onsager relations taking into account the tunneling magneto resistance of the MTJ. These findings contrast previous studies on AlO based MTJ systems, revealing tunneling magneto thermo power but no tunneling magneto thermocurrent.
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Submitted 17 April, 2013;
originally announced April 2013.
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Determination of spin-dependent Seebeck coefficients of CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars
Authors:
N. Liebing,
S. Serrano-Guisan,
K. Rott,
G. Reiss,
J. Langer,
B. Ocker,
H. W. Schumacher
Abstract:
We investigate the spin-dependent Seebeck coefficient and the tunneling magneto thermopower of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ) in the presence of thermal gradients across the MTJ. Thermal gradients are generated by an electric heater on top of the nanopillars. The thermo power voltage across the MTJ is found to scale linearly with the heating power and reveals similar field depende…
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We investigate the spin-dependent Seebeck coefficient and the tunneling magneto thermopower of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ) in the presence of thermal gradients across the MTJ. Thermal gradients are generated by an electric heater on top of the nanopillars. The thermo power voltage across the MTJ is found to scale linearly with the heating power and reveals similar field dependence as the tunnel magnetoresistance. The amplitude of the thermal gradient is derived from calibration measurements in combination with finite element simulations of the heat flux. Based on this, large spin-dependent Seebeck coefficients of the order of (240 \pm 110) \muV/K are derived. From additional measurements on MTJs after dielectric breakdown, a tunneling magneto thermopower up to 90% can be derived for 1.5 nm MgO based MTJ nanopillars.
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Submitted 27 September, 2011;
originally announced September 2011.
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Tunneling magneto thermo power in magnetic tunnel junction nanopillars
Authors:
N. Liebing,
S. Serrano-Guisan,
K. Rott,
G. Reiss,
J. Langer,
B. Ocker,
H. W. Schumacher
Abstract:
We study the tunneling magneto thermo power (TMTP) in CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars. Thermal gradients across the junctions are generated by a micropatterned electric heater line. Thermo power voltages up to a few tens of \muV between the top and bottom contact of the nanopillars are measured which scale linearly with the applied heating power and hence with the applied temp…
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We study the tunneling magneto thermo power (TMTP) in CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars. Thermal gradients across the junctions are generated by a micropatterned electric heater line. Thermo power voltages up to a few tens of \muV between the top and bottom contact of the nanopillars are measured which scale linearly with the applied heating power and hence with the applied temperature gradient. The thermo power signal varies by up to 10 \muV upon reversal of the relative magnetic configuration of the two CoFeB layers from parallel to antiparallel. This signal change corresponds to a large spin-dependent Seebeck coefficient of the order of 100 \muV/K and a large TMTP change of the tunnel junction of up to 90%.
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Submitted 1 July, 2011; v1 submitted 4 April, 2011;
originally announced April 2011.
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Inductive determination of the optimum tunnel barrier thickness in magnetic tunnelling junction stacks for spin torque memory applications
Authors:
Santiago Serrano-Guisan,
Witold Skowronski,
Jerzy Wrona,
Niklas Liebing,
Maciej Czapkiewicz,
Tomasz Stobiecki,
Günter Reiss,
Hans-Werner Schumacher
Abstract:
We use pulsed inductive microwave magnetometry to study the precessional magnetization dynamics of the free layer in CoFeB/MgO/CoFeB based magnetic tunnelling junction stacks with varying MgO barrier thickness. From the field dependence of the precession frequency we are able to derive the uniaxial anisotropy energy and the exchange coupling between the free and the pinned layer. Furthermore the f…
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We use pulsed inductive microwave magnetometry to study the precessional magnetization dynamics of the free layer in CoFeB/MgO/CoFeB based magnetic tunnelling junction stacks with varying MgO barrier thickness. From the field dependence of the precession frequency we are able to derive the uniaxial anisotropy energy and the exchange coupling between the free and the pinned layer. Furthermore the field dependence of the effective damping parameter is derived. Below a certain threshold barrier thickness we observe an increased effective damping for antiparallel orientation of free and pinned layer which would inhibit reversible low current density spin torque magnetization reversal. Such inductive measurements, in combination with wafer probe station based magneto transport experiments, allow a fast determination of the optimum tunnel barrier thickness range for spin torque memory applications in a lithography free process.
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Submitted 22 March, 2011;
originally announced March 2011.
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Parameter dependence of resonant spin torque magnetization reversal
Authors:
L. Fricke,
S. Serrano-Guisan,
H. W. Schumacher
Abstract:
We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunnelling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The precessional ST dynamics of the single domain MTJ free layer cell are modelled in the macro spin approximation. The energy efficiency, reversal time, and reversal reliabil…
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We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunnelling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The precessional ST dynamics of the single domain MTJ free layer cell are modelled in the macro spin approximation. The energy efficiency, reversal time, and reversal reliability are investigated under variation of pulse parameters like direct and AC current amplitude, AC frequency and AC phase. We find a range of AC and direct current amplitudes where robust resonant ST reversal is obtained with faster switching time and reduced energy consumption per pulse compared to purely direct current ST reversal. However for a certain range of AC and direct current amplitudes a strong dependence of the reversal properties on AC frequency and phase is found. Such regions of unreliable reversal must be avoided for ST memory applications.
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Submitted 18 August, 2010;
originally announced August 2010.
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Biased quasi ballistic spin torque magnetization reversal
Authors:
S. Serrano-Guisan,
K. Rott,
G. Reiss,
J. Langer,
B. Ocker,
H. W. Schumacher
Abstract:
We explore the fundamental time limit of ultra fast spin torque induced magnetization reversal of a magnetic memory cell. Spin torque precession during a spin torque current pulse and free precessional magnetization ringing after spin torque pulse excitation is detected by time resolved magneto transport. Adapting the duration of the spin torque excitation pulse to the spin torque precession per…
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We explore the fundamental time limit of ultra fast spin torque induced magnetization reversal of a magnetic memory cell. Spin torque precession during a spin torque current pulse and free precessional magnetization ringing after spin torque pulse excitation is detected by time resolved magneto transport. Adapting the duration of the spin torque excitation pulse to the spin torque precession period allows suppression of the magnetization ringing and thus coherent control of the final orientation of the magnetization. In the presence of a hard axis bias field such coherent control enables an optimum ultra fast, quasi ballistic spin torque magnetization reversal by a single precessional turn directly from the initial to the reversed equilibrium state.
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Submitted 30 April, 2008;
originally announced April 2008.
