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Natural exceptional points in the excitation spectrum of a light-matter system
Authors:
Andrzej Opala,
Magdalena Furman,
Mateusz Król,
Rafał Mirek,
Krzysztof Tyszka,
Bartłomiej Seredyński,
Wojciech Pacuski,
Jacek Szczytko,
Michał Matuszewski,
Barbara Piętka
Abstract:
We observe natural exceptional points in the excitation spectrum of an exciton-polariton system by optically tuning the light-matter interactions. The observed exceptional points do not require any spatial or polarization degrees of freedom and result solely from the transition from weak to strong light-matter coupling. We demonstrate that they do not coincide with the threshold for photon lasing,…
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We observe natural exceptional points in the excitation spectrum of an exciton-polariton system by optically tuning the light-matter interactions. The observed exceptional points do not require any spatial or polarization degrees of freedom and result solely from the transition from weak to strong light-matter coupling. We demonstrate that they do not coincide with the threshold for photon lasing, confirming previous theoretical predictions [Phys. Rev. Lett. 122, 185301 (2019), Optica 7, 1015 (2020) ]. Using a technique where a strong coherent laser pump induces up-converted excitations, we encircle the exceptional point in the parameter space of coupling strength and particle momentum. Our method of local optical control of light-matter coupling paves the way to investigation of fundamental phenomena including dissipative phase transitions and non-Hermitian topological states.
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Submitted 2 June, 2023;
originally announced June 2023.
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Spin polarization of exciton-polariton condensate in a photonic synthetic effective magnetic field
Authors:
R. Mirek,
M. Furman,
M. Król,
B. Seredyński,
K. Łempicka-Mirek,
K. Tyszka,
W. Pacuski,
M. Matuszewski,
J. Szczytko,
B. Piętka
Abstract:
We investigate the spin polarization of localized exciton-polariton condensates. We demonstrate the presence of an effective magnetic field leading to the formation of elliptically polarized condensates. We show that this synthetic field has an entirely photonic origin, which we believe is unique for the CdTe-based microcavities. Moreover, the degree of spin polarization of localized polariton con…
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We investigate the spin polarization of localized exciton-polariton condensates. We demonstrate the presence of an effective magnetic field leading to the formation of elliptically polarized condensates. We show that this synthetic field has an entirely photonic origin, which we believe is unique for the CdTe-based microcavities. Moreover, the degree of spin polarization of localized polariton condensates in samples with magnetic ions depends on the excitation power or polarization of the non-resonant excitation laser. In an external magnetic field, the semimagnetic condensate spontaneously builds up strong spin polarization. Based on the magnetic field behavior of the condensate in the presence of magnetic ions, we apply a model that allows us to estimate the polariton-polariton interaction strength in a CdTe-system to approx. 0.8 $μ\text{eV}\!\cdot\!μ\text{m}^2$.
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Submitted 4 November, 2022;
originally announced November 2022.
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Structural properties of TaAs Weyl semimetal thin films grown by molecular beam epitaxy on GaAs(001) substrates
Authors:
Janusz Sadowski,
Jarosław Z. Domagała,
Wiktoria Zajkowska,
Sławomir Kret,
Bartłomiej Seredyński,
Marta Gryglas-Borysiewicz,
Zuzanna Ogorzałek,
Rafał Bożek,
Wojciech Pacuski
Abstract:
Thin crystalline layers of TaAs Weyl semimetal (9 and 18 nm thick) are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding in-plane crystallographic directions of the substrate and the layer are rotated by 45°. In spite of a substantial lattice mismatch (about 19%) between GaAs(001)…
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Thin crystalline layers of TaAs Weyl semimetal (9 and 18 nm thick) are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding in-plane crystallographic directions of the substrate and the layer are rotated by 45°. In spite of a substantial lattice mismatch (about 19%) between GaAs(001) substrate and TaAs epilayer no misfit dislocations are observed at the GaAs(001)/TaAs(001) interface. Only stacking fault defects in TaAs are detected with transmission electron microscopy. Thorough X-ray diffraction measurements and analysis of the in-situ reflection high energy electron diffraction images indicates that TaAs layers are fully relaxed already at the initial deposition stage. Atomic force microscopy imaging reveals the columnar structure of the layers, with lateral (parallel to the layer surface) columns about 20 nm wide and 200 nm long. Both X-ray diffraction and transmission electron microscopy measurements indicate that the columns share the same orientation and crystalline structure.
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Submitted 4 September, 2022; v1 submitted 1 September, 2022;
originally announced September 2022.
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Neural networks based on ultrafast time-delayed effects in exciton-polaritons
Authors:
Rafał Mirek,
Andrzej Opala,
Magdalena Furman,
Mateusz Król,
Krzysztof Tyszka,
Bartłomiej Seredyński,
Wojciech Pacuski,
Jan Suffczyński,
Jacek Szczytko,
Michał Matuszewski,
Barbara Piętka
Abstract:
We demonstrate that time-delayed nonlinear effects in exciton-polaritons can be used to construct neural networks where information is coded in optical pulses arriving consecutively on the sample. The highly nonlinear effects are induced by time-dependent interactions with the excitonic reservoir. These nonlinearities allow to create a nonlinear XOR logic gate that can perform operations on the pi…
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We demonstrate that time-delayed nonlinear effects in exciton-polaritons can be used to construct neural networks where information is coded in optical pulses arriving consecutively on the sample. The highly nonlinear effects are induced by time-dependent interactions with the excitonic reservoir. These nonlinearities allow to create a nonlinear XOR logic gate that can perform operations on the picosecond timescale. An optoelectronic neural network based on the constructed logic gate performs classification of spoken digits with a high accuracy rate.
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Submitted 1 January, 2022;
originally announced January 2022.
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Leaky Integrate-and-Fire Mechanism in Exciton-Polariton Condensates for Photonic Spiking Neurons
Authors:
K. Tyszka,
M. Furman,
R. Mirek,
M. Król,
A. Opala,
B. Seredyński,
J. Suffczyński,
W. Pacuski,
M. Matuszewski,
J. Szczytko,
B. Piętka
Abstract:
This paper introduces a new approach to neuromorphic photonics in which microcavities exhibiting strong exciton-photon interaction may serve as building blocks of optical spiking neurons. The experimental results demonstrate the intrinsic property of exciton-polaritons to resemble the Leaky Integrate-and-Fire spiking mechanism. It is shown that exciton-polariton microcavities when non-resonantly p…
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This paper introduces a new approach to neuromorphic photonics in which microcavities exhibiting strong exciton-photon interaction may serve as building blocks of optical spiking neurons. The experimental results demonstrate the intrinsic property of exciton-polaritons to resemble the Leaky Integrate-and-Fire spiking mechanism. It is shown that exciton-polariton microcavities when non-resonantly pumped with a pulsed laser exhibit leaky-integration due to relaxation of the excitonic reservoir, threshold-and-fire mechanism due to transition to Bose-Einstein condensate, and resetting due to stimulated emission of photons. These effects, evidenced in photoluminescence characteristics, arise within sub-ns timescales. The presented approach provides means for energy-efficient ultrafast processing of spike-like laser pulses at the level below 1 pJ/spike.
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Submitted 25 November, 2021;
originally announced November 2021.
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Molecular Beam Epitaxy growth of MoTe$_2$ on Hexagonal Boron Nitride
Authors:
Bartłomiej Seredyński,
Rafał Bożek,
Jan Suffczyński,
Justyna Piwowar,
Janusz Sadowski,
Wojciech Pacuski
Abstract:
Hexagonal boron nitride has already been proven to serve as a decent substrate for high quality epitaxial growth of several 2D materials, such as graphene, MoSe$_{\tiny{\textrm{2}}}$, MoS$_{\tiny{\textrm{2}}}$ or WSe$_{\tiny{\textrm{2}}}$. Here, we present for the first time the molecular beam epitaxy growth of MoTe$_{\tiny{\textrm{2}}}$ on atomically smooth hexagonal boron nitride (hBN) substrate…
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Hexagonal boron nitride has already been proven to serve as a decent substrate for high quality epitaxial growth of several 2D materials, such as graphene, MoSe$_{\tiny{\textrm{2}}}$, MoS$_{\tiny{\textrm{2}}}$ or WSe$_{\tiny{\textrm{2}}}$. Here, we present for the first time the molecular beam epitaxy growth of MoTe$_{\tiny{\textrm{2}}}$ on atomically smooth hexagonal boron nitride (hBN) substrate. Occurrence of MoTe$_{\tiny{\textrm{2}}}$ in various crystalline phases such as distorted octahedral 1T' phase with semimetal properties or hexagonal 2H phase with semiconducting properties opens a possibility of realisation of crystal-phase homostructures with tunable properties. Atomic force microscopy studies of MoTe$_{\tiny{\textrm{2}}}$ grown in a single monolayer regime enable us to determine surface morphology as a function of the growth conditions. The diffusion constant of MoTe$_{\tiny{\textrm{2}}}$ grown on hBN can be altered 5 times by annealing after the growth, reaching about 5 $\cdot$ 10$^{-6}$ cm$^{2}$/s. Raman spectroscopy results suggest a coexistence of both 2H and 1T' MoTe$_{\tiny{\textrm{2}}}$ phases in the studied samples.
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Submitted 5 July, 2023; v1 submitted 24 November, 2021;
originally announced November 2021.
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Molecular Beam Epitaxy of a 2D material nearly lattice matched to a 3D substrate: $NiTe_{2}$ on $GaAs$
Authors:
Bartłomiej Seredyński,
Zuzanna Ogorzałek,
Wiktoria Zajkowska,
Rafał Bożek,
Mateusz Tokarczyk,
Jan Suffczyński,
Sławomir Kret,
Janusz Sadowski,
Marta Gryglas-Borysiewicz,
Wojciech Pacuski
Abstract:
The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for epitaxy. Here we present the first molecular beam epitaxy growth of NiTe$_{2}$ 2D transition metal dichalcogenide. Importantly, the growth is realized on a nearl…
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The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for epitaxy. Here we present the first molecular beam epitaxy growth of NiTe$_{2}$ 2D transition metal dichalcogenide. Importantly, the growth is realized on a nearly lattice matched GaAs(111)B substrate. Structural properties of the grown layers are investigated by electron diffraction, X-ray diffraction, and scanning tunnelling microscopy. Surface coverage and atomic scale order is evidenced by images obtained with atomic force, scanning electron, and transmission electron microscopy. Basic transport properties were measured confirming that NiTe$_{2}$ layers are metallic, with the Hall concentration of $10^{20}$cm$^{-3}$ to $10^{23}$cm$^{-3}$, depending on the growth conditions.
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Submitted 16 August, 2021;
originally announced August 2021.
