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Path Loss, Angular Spread and Channel Sparsity Modeling for Indoor and Outdoor Environments at the sub-THz Band
Authors:
Dimitrios G. Selimis,
Mar Francis De Guzman,
Fotis I. Lazarakis,
Kyriakos N. Manganaris,
Kostas P. Peppas,
Katsuyuki Haneda
Abstract:
In this paper, we present new measurement results to model large-scale path loss, angular spread and channel sparsity at the sub-THz (141-145 GHz) band, for both indoor and outdoor scenarios. Extensive measurement campaigns have been carried out, taking into account both line-of-sight (LoS) and non line-of-sight (NLoS) propagation. For all considered propagation scenarios, omni-directional and dir…
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In this paper, we present new measurement results to model large-scale path loss, angular spread and channel sparsity at the sub-THz (141-145 GHz) band, for both indoor and outdoor scenarios. Extensive measurement campaigns have been carried out, taking into account both line-of-sight (LoS) and non line-of-sight (NLoS) propagation. For all considered propagation scenarios, omni-directional and directional path loss models have been developed, based on the so-called close-in (CI) free-space reference distance model. Moreover, path loss modeling has been applied for the 2nd and 3rd strongest multipath components (MPCs), based on which path loss exponent and large-scale shadow fading estimates have been derived. A power angular spread analysis is further presented, using up to the 3rd strongest MPC. Finally, results on the sparsity of the wireless channel have also been presented by employing the so-called Gini index.
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Submitted 26 April, 2023; v1 submitted 22 September, 2022;
originally announced September 2022.
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Early RTL Analysis for SCA Vulnerability in Fuzzy Extractors of Memory-Based PUF Enabled Devices
Authors:
Xinhui Lai,
Maksim Jenihhin,
Georgios Selimis,
Sven Goossens,
Roel Maes,
Kolin Paul
Abstract:
Physical Unclonable Functions (PUFs) are gaining attention in the cryptography community because of the ability to efficiently harness the intrinsic variability in the manufacturing process. However, this means that they are noisy devices and require error correction mechanisms, e.g., by employing Fuzzy Extractors (FEs). Recent works demonstrated that applying FEs for error correction may enable n…
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Physical Unclonable Functions (PUFs) are gaining attention in the cryptography community because of the ability to efficiently harness the intrinsic variability in the manufacturing process. However, this means that they are noisy devices and require error correction mechanisms, e.g., by employing Fuzzy Extractors (FEs). Recent works demonstrated that applying FEs for error correction may enable new opportunities to break the PUFs if no countermeasures are taken. In this paper, we address an attack model on FEs hardware implementations and provide a solution for early identification of the timing Side-Channel Attack (SCA) vulnerabilities which can be exploited by physical fault injection. The significance of this work stems from the fact that FEs are an essential building block in the implementations of PUF-enabled devices. The information leaked through the timing side-channel during the error correction process can reveal the FE input data and thereby can endanger revealing secrets. Therefore, it is very important to identify the potential leakages early in the process during RTL design. Experimental results based on RTL analysis of several Bose-Chaudhuri-Hocquenghem (BCH) and Reed-Solomon decoders for PUF-enabled devices with FEs demonstrate the feasibility of the proposed methodology.
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Submitted 19 August, 2020;
originally announced August 2020.
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Long-term continuous assessment of SRAM PUF and source of random numbers
Authors:
Rui Wang,
Georgios Selimis,
Roel Maes,
Sven Goossens
Abstract:
The qualities of Physical Unclonable Functions (PUFs) suffer from several noticeable degradations due to silicon aging. In this paper, we investigate the long-term effects of silicon aging on PUFs derived from the start-up behavior of Static Random Access Memories (SRAM). Previous research on SRAM aging is based on transistor-level simulation or accelerated aging test at high temperature and volta…
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The qualities of Physical Unclonable Functions (PUFs) suffer from several noticeable degradations due to silicon aging. In this paper, we investigate the long-term effects of silicon aging on PUFs derived from the start-up behavior of Static Random Access Memories (SRAM). Previous research on SRAM aging is based on transistor-level simulation or accelerated aging test at high temperature and voltage to observe aging effects within a short period of time. In contrast, we have run a long-term continuous power-up test on 16 Arduino Leonardo boards under nominal conditions for two years. In total, we collected around 175 million measurements for reliability, uniqueness and randomness evaluations. Analysis shows that the number of bits that flip with respect to the reference increased by 19.3% while min-entropy of SRAM PUF noise improves by 19.3% on average after two years of aging. The impact of aging on reliability is smaller under nominal conditions than was previously assessed by the accelerated aging test. The test we conduct in this work more closely resembles the conditions of a device in the field, and therefore we more accurately evaluate how silicon aging affects SRAM PUFs.
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Submitted 31 July, 2020;
originally announced July 2020.
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RESCUE: Interdependent Challenges of Reliability, Security and Quality in Nanoelectronic Systems
Authors:
Maksim Jenihhin,
Said Hamdioui,
Matteo Sonza Reorda,
Milos Krstic,
Peter Langendoerfer,
Christian Sauer,
Anton Klotz,
Michael Huebner,
Joerg Nolte,
Heinrich Theodor Vierhaus,
Georgios Selimis,
Dan Alexandrescu,
Mottaqiallah Taouil,
Geert-Jan Schrijen,
Jaan Raik,
Luca Sterpone,
Giovanni Squillero,
Zoya Dyka
Abstract:
The recent trends for nanoelectronic computing systems include machine-to-machine communication in the era of Internet-of-Things (IoT) and autonomous systems, complex safety-critical applications, extreme miniaturization of implementation technologies and intensive interaction with the physical world. These set tough requirements on mutually dependent extra-functional design aspects. The H2020 MSC…
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The recent trends for nanoelectronic computing systems include machine-to-machine communication in the era of Internet-of-Things (IoT) and autonomous systems, complex safety-critical applications, extreme miniaturization of implementation technologies and intensive interaction with the physical world. These set tough requirements on mutually dependent extra-functional design aspects. The H2020 MSCA ITN project RESCUE is focused on key challenges for reliability, security and quality, as well as related electronic design automation tools and methodologies. The objectives include both research advancements and cross-sectoral training of a new generation of interdisciplinary researchers. Notable interdisciplinary collaborative research results for the first half-period include novel approaches for test generation, soft-error and transient faults vulnerability analysis, cross-layer fault-tolerance and error-resilience, functional safety validation, reliability assessment and run-time management, HW security enhancement and initial implementation of these into holistic EDA tools.
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Submitted 29 November, 2019;
originally announced December 2019.
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A Robust SRAM-PUF Key Generation Scheme Based on Polar Codes
Authors:
Bin Chen,
Tanya Ignatenko,
Frans M. J. Willems,
Roel Maes,
Erik van der Sluis,
Georgios Selimis
Abstract:
Physical unclonable functions (PUFs) are relatively new security primitives used for device authentication and device-specific secret key generation. In this paper we focus on SRAM-PUFs. The SRAM-PUFs enjoy uniqueness and randomness properties stemming from the intrinsic randomness of SRAM memory cells, which is a result of manufacturing variations. This randomness can be translated into the crypt…
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Physical unclonable functions (PUFs) are relatively new security primitives used for device authentication and device-specific secret key generation. In this paper we focus on SRAM-PUFs. The SRAM-PUFs enjoy uniqueness and randomness properties stemming from the intrinsic randomness of SRAM memory cells, which is a result of manufacturing variations. This randomness can be translated into the cryptographic keys thus avoiding the need to store and manage the device cryptographic keys. Therefore these properties, combined with the fact that SRAM memory can be often found in today's IoT devices, make SRAM-PUFs a promising candidate for securing and authentication of the resource-constrained IoT devices. PUF observations are always effected by noise and environmental changes. Therefore secret-generation schemes with helper data are used to guarantee reliable regeneration of the PUF-based secret keys. Error correction codes (ECCs) are an essential part of these schemes. In this work, we propose a practical error correction construction for PUF-based secret generation that are based on polar codes. The resulting scheme can generate $128$-bit keys using $1024$ SRAM-PUF bits and $896$ helper data bits and achieve a failure probability of $10^{-9}$ or lower for a practical SRAM-PUFs setting with bit error probability of $15\%$. The method is based on successive cancellation combined with list decoding and hash-based checking that makes use of the hash that is already available at the decoder. In addition, an adaptive list decoder for polar codes is investigated. This decoder increases the list size only if needed.
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Submitted 27 July, 2017; v1 submitted 25 January, 2017;
originally announced January 2017.
