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Identifying and mitigating errors in hole spin qubit readout
Authors:
Eoin Gerard Kelly,
Leonardo Massai,
Bence Hetényi,
Marta Pita-Vidal,
Alexei Orekhov,
Cornelius Carlsson,
Inga Seidler,
Konstantinos Tsoukalas,
Lisa Sommer,
Michele Aldeghi,
Stephen W. Bedell,
Stephan Paredes,
Felix J. Schupp,
Matthias Mergenthaler,
Andreas Fuhrer,
Gian Salis,
Patrick Harvey-Collard
Abstract:
High-fidelity readout of spin qubits in semiconductor quantum dots can be achieved by combining a radio-frequency (RF) charge sensor together with spin-to-charge conversion and Pauli spin blockade. However, reaching high readout fidelities in hole spin qubits remains elusive and is complicated by a combination of site-dependent spin anisotropies and short spin relaxation times. Here, we analyze th…
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High-fidelity readout of spin qubits in semiconductor quantum dots can be achieved by combining a radio-frequency (RF) charge sensor together with spin-to-charge conversion and Pauli spin blockade. However, reaching high readout fidelities in hole spin qubits remains elusive and is complicated by a combination of site-dependent spin anisotropies and short spin relaxation times. Here, we analyze the different error processes that arise during readout using a double-latched scheme in a germanium double quantum dot hole spin qubit system. We first investigate the spin-to-charge conversion process as a function of magnetic field orientation, and configure the system to adiabatically map the $\lvert \downarrow\downarrow \rangle$ state to the only non-blockaded state. We reveal a strong dependence of the spin relaxation rates on magnetic field strength and minimize this relaxation by operating at low fields. We further characterize and mitigate the error processes that arise during the double-latching process. By combining an RF charge sensor, a double-latching process, and optimized magnetic field parameters, we achieve a single-shot single-qubit state-preparation-and-measurement fidelity of 97.0%, the highest reported fidelity for hole spin qubits. Unlike prior works and vital to usability, we simultaneously maintain universal control of both spins. These findings lay the foundation for the reproducible achievement of high-fidelity readout in hole-based spin quantum processors.
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Submitted 9 April, 2025;
originally announced April 2025.
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A dressed singlet-triplet qubit in germanium
Authors:
Konstantinos Tsoukalas,
Uwe von Lüpke,
Alexei Orekhov,
Bence Hetényi,
Inga Seidler,
Lisa Sommer,
Eoin G. Kelly,
Leonardo Massai,
Michele Aldeghi,
Marta Pita-Vidal,
Nico W. Hendrickx,
Stephen W. Bedell,
Stephan Paredes,
Felix J. Schupp,
Matthias Mergenthaler,
Gian Salis,
Andreas Fuhrer,
Patrick Harvey-Collard
Abstract:
In semiconductor hole spin qubits, low magnetic field ($B$) operation extends the coherence time ($T_\mathrm{2}^*$) but proportionally reduces the gate speed. In contrast, singlet-triplet (ST) qubits are primarily controlled by the exchange interaction ($J$) and can thus maintain high gate speeds even at low $B$. However, a large $J$ introduces a significant charge component to the qubit, renderin…
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In semiconductor hole spin qubits, low magnetic field ($B$) operation extends the coherence time ($T_\mathrm{2}^*$) but proportionally reduces the gate speed. In contrast, singlet-triplet (ST) qubits are primarily controlled by the exchange interaction ($J$) and can thus maintain high gate speeds even at low $B$. However, a large $J$ introduces a significant charge component to the qubit, rendering ST qubits more vulnerable to charge noise when driven. Here, we demonstrate a highly coherent ST hole spin qubit in germanium, operating at both low $B$ and low $J$. By modulating $J$, we achieve resonant driving of the ST qubit, obtaining an average gate fidelity of $99.68\%$ and a coherence time of $T_\mathrm{2}^*=1.9\,μ$s. Moreover, by applying the resonant drive continuously, we realize a dressed ST qubit with a tenfold increase in coherence time ($T_\mathrm{2ρ}^*=20.3\,μ$s). Frequency modulation of the driving signal enables universal control, with an average gate fidelity of $99.64\%$. Our results demonstrate the potential for extending coherence times while preserving high-fidelity control of germanium-based ST qubits, paving the way for more efficient operations in semiconductor-based quantum processors.
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Submitted 24 January, 2025;
originally announced January 2025.
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Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures
Authors:
L. Massai,
B. Hetényi,
M. Mergenthaler,
F. J. Schupp,
L. Sommer,
S. Paredes,
S. W. Bedell,
P. Harvey-Collard,
G. Salis,
A. Fuhrer,
N. W. Hendrickx
Abstract:
Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control. However, SOC also increases the susceptibility of spin qubits to charge noise. While qubit coherence can be significantly improved by operating at sweet spots with…
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Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control. However, SOC also increases the susceptibility of spin qubits to charge noise. While qubit coherence can be significantly improved by operating at sweet spots with reduced hyperfine or charge noise sensitivity, the latter ultimately limits coherence, underlining the importance of understanding and reducing charge noise at its source. In this work, we study the voltage-induced hysteresis commonly observed in SiGe-based quantum devices and show that the dominant charge fluctuators are localized at the semiconductor-oxide interface. By applying increasingly negative gate voltages to Hall bar and quantum dot devices, we investigate how the hysteretic filling of interface traps impacts transport metrics and charge noise. We find that the gate-induced accumulation and trapping of charge at the SiGe-oxide interface leads to an increased electrostatic disorder, as probed by transport measurements, as well as the activation of low-frequency relaxation dynamics, resulting in slow drifts and increased charge noise levels. Our results highlight the importance of a conservative device tuning strategy and reveal the critical role of the semiconductor-oxide interface in SiGe heterostructures for spin qubit applications.
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Submitted 9 October, 2023;
originally announced October 2023.
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Radio-frequency characterization of a supercurrent transistor made from a carbon nanotube
Authors:
M. Mergenthaler,
F. J. Schupp,
A. Nersisyan,
N. Ares,
A. Baumgartner,
C. Schönenberger,
G. A. D. Briggs,
P. J. Leek,
E. A. Laird
Abstract:
A supercurrent transistor is a superconductor-semiconductor hybrid device in which the Josephson supercurrent is switched on and off using a gate voltage. While such devices have been studied using DC transport, radio-frequency measurements allow for more sensitive and faster experiments. Here a supercurrent transistor made from a carbon nanotube is measured simultaneously via DC conductance and r…
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A supercurrent transistor is a superconductor-semiconductor hybrid device in which the Josephson supercurrent is switched on and off using a gate voltage. While such devices have been studied using DC transport, radio-frequency measurements allow for more sensitive and faster experiments. Here a supercurrent transistor made from a carbon nanotube is measured simultaneously via DC conductance and radio-frequency reflectometry. The radio-frequency measurement resolves all the main features of the conductance data across a wide range of bias and gate voltage, and many of these features are seen more clearly. These results are promising for measuring other kinds of hybrid superconducting devices, in particular for detecting the reactive component of the impedance, which a DC measurement can never detect.
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Submitted 30 March, 2021;
originally announced March 2021.
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A coherent nanomechanical oscillator driven by single-electron tunnelling
Authors:
Yutian Wen,
N. Ares,
F. J. Schupp,
T. Pei,
G. A. D. Briggs,
E. A. Laird
Abstract:
A single-electron transistor incorporated as part of a nanomechanical resonator represents an extreme limit of electron-phonon coupling. While it allows for fast and sensitive electromechanical measurements, it also introduces backaction forces from electron tunnelling which randomly perturb the mechanical state. Despite the stochastic nature of this backaction, under conditions of strong coupling…
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A single-electron transistor incorporated as part of a nanomechanical resonator represents an extreme limit of electron-phonon coupling. While it allows for fast and sensitive electromechanical measurements, it also introduces backaction forces from electron tunnelling which randomly perturb the mechanical state. Despite the stochastic nature of this backaction, under conditions of strong coupling it is predicted to create self-sustaining coherent mechanical oscillations. Here, we verify this prediction using time-resolved measurements of a vibrating carbon nanotube transistor. This electromechanical oscillator has intriguing similarities with a laser. The single-electron transistor, pumped by an electrical bias, acts as a gain medium while the resonator acts as a phonon cavity. Despite the unconventional operating principle, which does not involve stimulated emission, we confirm that the output is coherent, and demonstrate other laser behaviour including injection locking and frequency narrowing through feedback.
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Submitted 11 March, 2019;
originally announced March 2019.
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Radio-frequency reflectometry of a quantum dot using an ultra-low-noise SQUID amplifier
Authors:
F. J. Schupp,
F. Vigneau,
Y. Wen,
A. Mavalankar,
J. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
C. G. Smith,
L. C. Camenzind,
L. Yu,
D. M. Zumbühl,
G. A. D. Briggs,
N. Ares,
E. A. Laird
Abstract:
Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The…
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Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The SQUID amplifier operates at a frequency near 200 MHz and achieves a noise temperature below 600 mK when integrated into a reflectometry circuit, which is within a factor 120 of the quantum limit. It enables a record sensitivity to capacitance of 0.07 aF/\sqrt{Hz}. The setup is used to acquire charge stability diagrams of a gate-defined double quantum dot in a short time with a signal-to-noise ration of about 38 in 1 microsecond of integration time.
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Submitted 29 June, 2020; v1 submitted 12 October, 2018;
originally announced October 2018.
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Carbon Nanotube Millikelvin Transport and Nanomechanics
Authors:
K. J. G. Götz,
F. J. Schupp,
A. K. Hüttel
Abstract:
Single wall carbon nanotubes cooled to cryogenic temperatures are outstanding electronic as well as nano-electromechanical model systems. To probe a largely unperturbed system, we measure a suspended carbon-nanotube device where the nanotube is grown in the last fabrication step, thus avoiding damage and residues from subsequent processing. In this ultra-clean device, we observe the transport spec…
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Single wall carbon nanotubes cooled to cryogenic temperatures are outstanding electronic as well as nano-electromechanical model systems. To probe a largely unperturbed system, we measure a suspended carbon-nanotube device where the nanotube is grown in the last fabrication step, thus avoiding damage and residues from subsequent processing. In this ultra-clean device, we observe the transport spectrum and its interaction with nano-electromechanics over a wide gate voltage range and thereby over a wide range of coupling parameters between the quantum dot and the contact electrodes.
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Submitted 10 December, 2018; v1 submitted 28 September, 2018;
originally announced September 2018.
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Shuttling a single charge across a one-dimensional array of silicon quantum dots
Authors:
A. R. Mills,
D. M. Zajac,
M. J. Gullans,
F. J. Schupp,
T. M. Hazard,
J. R. Petta
Abstract:
Significant advances have been made towards fault-tolerant operation of silicon spin qubits, with single qubit fidelities exceeding 99.9%, several demonstrations of two-qubit gates based on exchange coupling, and the achievement of coherent single spin-photon coupling. Coupling arbitrary pairs of spatially separated qubits in a quantum register poses a significant challenge as most qubit systems a…
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Significant advances have been made towards fault-tolerant operation of silicon spin qubits, with single qubit fidelities exceeding 99.9%, several demonstrations of two-qubit gates based on exchange coupling, and the achievement of coherent single spin-photon coupling. Coupling arbitrary pairs of spatially separated qubits in a quantum register poses a significant challenge as most qubit systems are constrained to two dimensions (2D) with nearest neighbor connectivity. For spins in silicon, new methods for quantum state transfer should be developed to achieve connectivity beyond nearest-neighbor exchange. Here we demonstrate shuttling of a single electron across a linear array of 9 series-coupled Si quantum dots in ~50 ns via a series of pairwise interdot charge transfers. By progressively constructing more complex pulse sequences we perform parallel shuttling of 2 and 3 electrons at a time through the 9-dot array. These experiments establish that physical transport of single electrons is feasible in large silicon quantum dot arrays.
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Submitted 11 September, 2018;
originally announced September 2018.
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Quantum Interference in Silicon 1D Quasi-Ballistic Junctionless Nanowire Field Effect Transistors
Authors:
Felix J. Schupp,
Muhammad M. Mirza,
Donald A. MacLaren,
G. Andrew D. Briggs,
Douglas J. Paul,
Jan A. Mol
Abstract:
We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated doping densities. First we extract the intrinsic gate capacitance of the device geometry from a device that shows Coulomb blockade at 13 mK with over 500 Coulomb peaks across a gate voltage range of 6 V…
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We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated doping densities. First we extract the intrinsic gate capacitance of the device geometry from a device that shows Coulomb blockade at 13 mK with over 500 Coulomb peaks across a gate voltage range of 6 V indicating the formation of a single island in the entire nanowire channel. In two other devices, doped Si:P $4\times10^{19}\,\text{cm}^{-3}$ and $2\times10^{20}\,\text{cm}^{-3}$, we observe quantum interference and use the extracted gate coupling to determine the dominant energy scale and the corresponding mean-free paths. For the higher doped device the analysis yields a mean free path of $4\pm2\,\text{nm}$, which is on the order of the average dopant spacing and suggests scattering on unactivated or activated dopants. For the device with an activated dopant density of $4\times10^{19}\,\text{cm}^{-3}$ the quantum interference effects suggest a mean free path of $10\pm2\,\text{nm}$, which is comparable to the nanowire width, and thus quasi-ballistic transport. A temperature dependent analysis of Universal Conductance Fluctuations suggests a coherence length above the nanowire length for temperatures below 1.9 K and decoherence from 1D electron-electron interactions for higher temperatures. The mobility is limited by scattering on impurities rather than the expected surface roughness scattering for nanowires with diameters larger or comparable to the Fermi wavelength. Our measurements therefore provide insight into the performance limitations from dominant scattering and dephasing mechanisms in technologically relevant silicon device geometries.
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Submitted 20 February, 2018;
originally announced February 2018.
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Nanomechanical characterization of the Kondo charge dynamics in a carbon nanotube
Authors:
K. J. G. Götz,
D. R. Schmid,
F. J. Schupp,
P. L. Stiller,
Ch. Strunk,
A. K. Hüttel
Abstract:
Using the transversal vibration resonance of a suspended carbon nanotube as charge detector for its embedded quantum dot, we investigate the case of strong Kondo correlations between a quantum dot and its leads. We demonstrate that even when large Kondo conductance is carried at odd electron number, the charging behaviour remains similar between odd and even quantum dot occupation. While the Kondo…
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Using the transversal vibration resonance of a suspended carbon nanotube as charge detector for its embedded quantum dot, we investigate the case of strong Kondo correlations between a quantum dot and its leads. We demonstrate that even when large Kondo conductance is carried at odd electron number, the charging behaviour remains similar between odd and even quantum dot occupation. While the Kondo conductance is caused by higher order processes, a sequential tunneling only model can describe the time-averaged charge. The gate potentials of maximum current and fastest charge increase display a characteristic relative shift, which is suppressed at increased temperature. These observations agree very well with models for Kondo-correlated quantum dots.
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Submitted 23 April, 2018; v1 submitted 1 February, 2018;
originally announced February 2018.
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Secondary electron interference from trigonal warping in clean carbon nanotubes
Authors:
A. Dirnaichner,
M. del Valle,
K. J. G. Götz,
F. J. Schupp,
N. Paradiso,
M. Grifoni,
Ch. Strunk,
A. K. Hüttel
Abstract:
We investigate Fabry-Perot interference in an ultraclean carbon nanotube resonator. The conductance shows a clear superstructure superimposed onto conventional Fabry-Perot oscillations. A sliding average over the fast oscillations reveals a characteristic slow modulation of the conductance as a function of the gate voltage. We identify the origin of this secondary interference in intervalley and i…
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We investigate Fabry-Perot interference in an ultraclean carbon nanotube resonator. The conductance shows a clear superstructure superimposed onto conventional Fabry-Perot oscillations. A sliding average over the fast oscillations reveals a characteristic slow modulation of the conductance as a function of the gate voltage. We identify the origin of this secondary interference in intervalley and intravalley backscattering processes which involve wave vectors of different magnitude, reflecting the trigonal warping of the Dirac cones. As a consequence, the analysis of the secondary interference pattern allows us to estimate the chiral angle of the carbon nanotube.
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Submitted 22 August, 2016; v1 submitted 11 February, 2016;
originally announced February 2016.
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Sensitive radio-frequency measurements of a quantum dot by tuning to perfect impedance matching
Authors:
N. Ares,
F. J. Schupp,
A. Mavalankar,
G. Rogers,
J. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
C. G. Smith,
A. Cottet,
G. A. D. Briggs,
E. A. Laird
Abstract:
Electrical readout of spin qubits requires fast and sensitive measurements, but these are hindered by poor impedance matching to the device. We demonstrate perfect impedance matching in a radio-frequency readout circuit, realized by incorporating voltage-tunable varactors to cancel out parasitic capacitances. In the optimized setup, a capacitance sensitivity of…
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Electrical readout of spin qubits requires fast and sensitive measurements, but these are hindered by poor impedance matching to the device. We demonstrate perfect impedance matching in a radio-frequency readout circuit, realized by incorporating voltage-tunable varactors to cancel out parasitic capacitances. In the optimized setup, a capacitance sensitivity of $1.6~\mathrm{aF}/\sqrt{\mathrm{Hz}}$ is achieved at a maximum source-drain bias of $170~μ$V root-mean-square and with bandwidth above $15~$MHz. Coulomb blockade is measured via both conductance and capacitance in a quantum dot, and the two contributions are found to be proportional, as expected from a quasistatic tunneling model. We benchmark our results against the requirements for single-shot qubit readout using quantum capacitance, a goal that has so far been elusive.
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Submitted 30 November, 2015; v1 submitted 23 October, 2015;
originally announced October 2015.
