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Suppression of Phase Separation in AlGaInAs Compositionally Graded Buffers for 1550 nm Photovoltaic Converters on GaAs
Authors:
Kevin L. Schulte,
John F. Geisz,
Harvey L. Guthrey,
Ryan M. France,
Edgard Winter da Costa,
Myles A. Steiner
Abstract:
We investigate strategies to suppress phase separation and reduce threading dislocation densities (TDD) in AlGaInAs compositionally graded buffers (CGBs) that span the lattice constant range from GaAs to InP. Combining results from high resolution x-ray diffraction, cathodoluminescence, transmission electron microscopy, and photovoltaic device measurements, we correlate choices of epitaxial growth…
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We investigate strategies to suppress phase separation and reduce threading dislocation densities (TDD) in AlGaInAs compositionally graded buffers (CGBs) that span the lattice constant range from GaAs to InP. Combining results from high resolution x-ray diffraction, cathodoluminescence, transmission electron microscopy, and photovoltaic device measurements, we correlate choices of epitaxial growth conditions with the defect structure of the CGBs and subsequent device performance. Both the use of substrates with high misorientation off (100) towards the (111)A plane and Zn-doping instead of Si-doping are shown to suppress phase separation and reduce TDD. We demonstrate a 0.74 eV GaInAs device grown on a (411)A GaAs substrate using a Zn-doped AlGaInAs CGB with TDD = 3.5 +/- 0.2 x 106 cm^-2 that has a bandgap-open circuit voltage offset of only 0.434 V measured under the AM1.5G solar spectrum. We characterized this device under high-intensity irradiance from a 1570 nm laser and measured a 31.9% peak efficiency laser power conversion efficiency at 3.6 W/cm2. These results provide a roadmap to the manufacture of laser- and thermal-power conversion devices with the performance and cost-effectiveness needed to drive adoption of these technologies at scale.
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Submitted 5 November, 2024;
originally announced November 2024.
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Sub-0.6 eV Inverted Metamorphic GaInAs Cells Grown on InP and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion
Authors:
Kevin L. Schulte,
Daniel J. Friedman,
Titilope Dada,
Harvey L. Guthrey,
Edgard Winter da Costa,
Eric J. Tervo,
Ryan M. France,
John F. Geisz,
Myles A. Steiner
Abstract:
We present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. The compositionally graded buffers in these devices have threading dislocation densities of 1.3x10^6 cm^-2 and 8.9x10^6 cm^-2 on InP and GaAs, respectively. The devices generate open-circuit voltages of 0.386 V and 0.383 V, respectively, at a current density of ~10 A/cm^…
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We present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. The compositionally graded buffers in these devices have threading dislocation densities of 1.3x10^6 cm^-2 and 8.9x10^6 cm^-2 on InP and GaAs, respectively. The devices generate open-circuit voltages of 0.386 V and 0.383 V, respectively, at a current density of ~10 A/cm^2, yielding bandgap-voltage offsets of 0.20 and 0.21 V. We measured their broadband reflectance and used it to estimate thermophotovoltaic efficiency. The InP-based cell is estimated to yield 1.09 W/cm^2 at 1100 degrees C vs. 0.92 W/cm^2 for the GaAs-based cell, with efficiencies of 16.8 vs. 9.2%. The efficiencies of both devices are limited by sub-bandgap absorption, with power weighted sub-bandgap reflectances of 81% and 58%, respectively, which we assess largely occurs in the graded buffers. We estimate that the thermophotovoltaic efficiencies would peak at ~1100 degrees C at 24.0% and 20.7% in structures with the graded buffer removed, if previously demonstrated reflectance is achieved. These devices also have application to laser power conversion in the 2.0-2.3 micron atmospheric window. We estimate peak LPC efficiencies of 36.8% and 32.5% under 2.0 micron irradiances of 1.86 W/cm^2 and 2.81 W/cm^2, respectively.
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Submitted 12 October, 2023;
originally announced October 2023.
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Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations
Authors:
Malik Hassanaly,
Hariswaran Sitaraman,
Kevin L. Schulte,
Aaron J. Ptak,
John Simon,
Kevin Udwary,
Jacob H. Leach,
Heather Splawn
Abstract:
Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cells for space and terrestrial applications. However, recent demonstrations of ultra fast growth rates ($\sim$ 500 $μ$m/h) via uncracked hydrides are not well described by present models for the growth. Therefore, it is ne…
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Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cells for space and terrestrial applications. However, recent demonstrations of ultra fast growth rates ($\sim$ 500 $μ$m/h) via uncracked hydrides are not well described by present models for the growth. Therefore, it is necessary to understand the kinetics of the growth process and its coupling with transport phenomena, so as to enable fast and uniform epitaxial growth. In this work, we derive a kinetic model using experimental data and integrate it into a computational fluid dynamics simulation of an HVPE growth reactor. We also modify an existing hydride cracking model that we validate against numerical simulations and experimental data. We show that the developed growth model and the improved cracking model are able to reproduce experimental growth measurements of \ce{GaAs} in an existing HVPE system.
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Submitted 22 September, 2021;
originally announced September 2021.
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Thermophotovoltaic Efficiency of 40%
Authors:
Alina LaPotin,
Kevin L. Schulte,
Myles A. Steiner,
Kyle Buznitsky,
Colin C. Kelsall,
Daniel J. Friedman,
Eric J. Tervo,
Ryan M. France,
Michelle R. Young,
Andrew Rohskopf,
Shomik Verma,
Evelyn N. Wang,
Asegun Henry
Abstract:
We report the fabrication and measurement of thermophotovoltaic (TPV) cells with efficiencies of >40%, which is a record high TPV efficiency and the first experimental demonstration of the efficiency of high-bandgap tandem TPV cells. TPV efficiency was determined by simultaneous measurement of electric power output and heat dissipation from the device via calorimetry. The TPV cells are two-junctio…
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We report the fabrication and measurement of thermophotovoltaic (TPV) cells with efficiencies of >40%, which is a record high TPV efficiency and the first experimental demonstration of the efficiency of high-bandgap tandem TPV cells. TPV efficiency was determined by simultaneous measurement of electric power output and heat dissipation from the device via calorimetry. The TPV cells are two-junction devices comprising high-quality III-V materials with band gaps between 1.0 and 1.4 eV that are optimized for high emitter temperatures of 1900-2400°C. The cells exploit the concept of band-edge spectral filtering to obtain high efficiency, using high-reflectivity back surface reflectors to reject unusable sub-bandgap radiation back to the emitter. A 1.4/1.2 eV device reached a maximum efficiency of (41.1 +/- 1)% operating at a power density of 2.39 W/cm2 under an irradiance of 30.4 W/cm2 and emitter temperature of 2400°C. A 1.2/1.0 device reached a maximum efficiency of (39.3 +/- 1)% operating at a power density of 1.8 W/cm2 under an irradiance of 20.1 W/cm2 and emitter temperature of 2127°C. These cells can be integrated into a TPV system for thermal energy grid storage (TEGS) to enable dispatchable renewable energy. These new TPV cells enable a pathway for TEGS to reach sufficiently high efficiency and sufficiently low cost to enable full decarbonization of the grid. Furthermore, the high demonstrated efficiency also gives TPV the potential to compete with turbine-based heat engines for large-scale power production with respect to both cost and performance, thereby enabling possible usage in natural gas or hydrogen-fueled electricity production.
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Submitted 16 November, 2021; v1 submitted 21 August, 2021;
originally announced August 2021.
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Enabling III-V-based optoelectronics with low-cost dynamic hydride vapor phase epitaxy
Authors:
John Simon,
Kevin L. Schulte,
Kelsey Horowitz,
Timothy Remo,
David L. Young,
Aaron J. Ptak
Abstract:
Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials have improved performance compared to silicon, but currently they are relegated to applications in high-value or niche markets due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials…
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Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials have improved performance compared to silicon, but currently they are relegated to applications in high-value or niche markets due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis using hydride vapor phase epitaxy that has the potential to lower III-V semiconductor deposition costs by orders of magnitude while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market. The emergence of a low-cost III-V deposition technique will enable III-V electronic and opto-electronic devices, with all the benefits that they bring, to permeate throughout modern society.
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Submitted 15 November, 2018; v1 submitted 27 September, 2018;
originally announced September 2018.
