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Showing 1–2 of 2 results for author: Samm, J

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  1. arXiv:1312.0159  [pdf, other

    cond-mat.mes-hall

    Fabrication and characterisation of nanospintronic devices

    Authors: J. Samm, J. Gramich, A. Baumgartner, M. Weiss, C. Schoenenberger

    Abstract: We report an improved fabrication scheme for carbon based nanospintronic devices and demonstrate the necessity for a careful data analysis to investigate the fundamental physical mechanisms leading to magnetoresistance. The processing with a low-density polymer and an optimised recipe allows us to improve the electrical, magnetic and structural quality of ferromagnetic Permalloy contacts on latera… ▽ More

    Submitted 30 November, 2013; originally announced December 2013.

    Comments: 13 pages, 5 figures

    Journal ref: J. Appl. Phys.115, 174309 (2014)

  2. arXiv:1012.1156  [pdf, other

    cond-mat.mes-hall cond-mat.mtrl-sci

    Observation of Long Spin Relaxation Times in Bilayer Graphene at Room Temperature

    Authors: T. -Y. Yang, J. Balakrishnan, F. Volmer, A. Avsar, M. Jaiswal, J. Samm, S. R. Ali, A. Pachoud, M. Zeng, M. Popinciuc, G. Güntherodt, B. Beschoten, B. Özyilmaz

    Abstract: We report on the first systematic study of spin transport in bilayer graphene (BLG) as a function of mobility, minimum conductivity, charge density and temperature. The spin relaxation time $τ_s$ scales inversely with the mobility $μ$ of BLG samples both at room temperature and at low temperature. This indicates the importance of D'yakonov - Perel' spin scattering in BLG. Spin relaxation times of… ▽ More

    Submitted 20 June, 2011; v1 submitted 6 December, 2010; originally announced December 2010.

    Comments: 19 pages, 7 figures, includes supplementary information, accepted for publication in Physical Review Letters

    Journal ref: Phys. Rev. Lett. 107, 047206 (2011)