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Giant Gate Response of the Charge in an Electron-Lattice Condensate
Authors:
Maedeh Taheri,
Jordan Teeter,
Topojit Debnath,
Nicholas Sesing,
Tina Salguero,
Roger K. Lake,
Alexander A. Balandin
Abstract:
Efficient electrical capacitive control is important for the next generation of ultra-low-power and ultra-fast electronics and energy-storage devices. Correlated electronic phases offer a powerful route to enhancing field-effect control beyond the limits of conventional capacitive gating. In such systems, modest gate voltages can couple to an order parameter, producing responses far larger than ex…
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Efficient electrical capacitive control is important for the next generation of ultra-low-power and ultra-fast electronics and energy-storage devices. Correlated electronic phases offer a powerful route to enhancing field-effect control beyond the limits of conventional capacitive gating. In such systems, modest gate voltages can couple to an order parameter, producing responses far larger than expected from the electrostatics of non-interacting carriers. It was demonstrated that electron-electron interactions, in which the exchange and correlation energies among electrons lower the chemical potential of an electron system as the electron density increases, can significantly increase the effective capacitance over its geometric capacitance value. Here, we show that the electron-lattice or electron-phonon correlations in charge density wave (CDW) condensate can lead to a giant gate response with the corresponding capacitance enhancement. This unusual phenomenon is demonstrated in the quasi-one-dimensional CDW material, where the gate-induced change in CDW charge density exceeds predictions based on geometrical gate capacitance by one to two orders of magnitude. This "giant gating" effect arises from the coupling of the electric field to the CDW electron-lattice condensate, demonstrating a mechanism for massively amplifying gate response via collective electronic behavior. We quantify the effect by determining the quantum capacitance of the CDW charge and by constructing a band diagram for the gated CDW device. The obtained results can lead to an alternative strategy for continuing the downscaling of the transistor feature size in electronic technology.
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Submitted 5 May, 2025;
originally announced May 2025.
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A Quieter State of Charge -- Ultra-Low-Noise Collective Current in Charge-Density-Wave Nanowires
Authors:
Subhajit Ghosh,
Nicholas Sesing,
Tina Salguero,
Sergey Rumyantsev,
Roger K. Lake,
Alexander A. Balandin
Abstract:
In quasi-one-dimensional (quasi-1D) charge-density-wave (CDW) systems, electric current comprises normal electrons and a collective, electron-lattice condensate current associated with CDW sliding. While achieving the dissipation-less Frohlich current of the sliding condensate is impossible in real materials, one can imagine an important related target, namely reaching the electron transport regim…
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In quasi-one-dimensional (quasi-1D) charge-density-wave (CDW) systems, electric current comprises normal electrons and a collective, electron-lattice condensate current associated with CDW sliding. While achieving the dissipation-less Frohlich current of the sliding condensate is impossible in real materials, one can imagine an important related target, namely reaching the electron transport regime where electronic noise is inhibited due to the collective, strongly-correlated nature of the electron-lattice condensate current. Here we report that in nanowires of the fully-gapped CDW material (TaSe4)2I, low-frequency electronic noise is suppressed below the limit of thermalized charge carriers in passive resistors. When the current is dominated by the sliding Frohlich condensate, the normalized noise spectral density decreases linearly with current -- a striking departure from the constant value observed in conventional conductors. This discovery signals intrinsically lower current fluctuations within a correlated transport regime. The dominant noise source due to fluctuations in the CDW depinning threshold is extrinsic and caused by lattice imperfections that locally pin the condensate. Once the bias voltage is well past threshold and the sliding mode is established, the normalized noise drops below the noise of normal electrons. No residual minimum noise level is observed for the current of the condensate. Since flicker noise limits phase stability in communication systems, reduces the sensitivity and selectivity of sensors, and degrades coherence in quantum devices, our discovery introduces a fundamentally new strategy for achieving ultra-low-noise performance in nanoscale and quantum electronics using strongly correlated materials.
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Submitted 29 April, 2025;
originally announced April 2025.
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Solution-Processed Inks with Fillers of NbS$_3$ Quasi-One-Dimensional Charge-Density-Wave Material
Authors:
Tekwam Geremew,
Maedeh Taheri,
Nicholas Sesing,
Subhajit Ghosh,
Fariborz Kargar,
Tina T. Salguero,
Alexander A. Balandin
Abstract:
We report on the solution processing and testing of electronic ink comprised of quasi-one-dimensional NbS$_3$ charge-density-wave fillers. The ink was prepared by liquid-phase exfoliation of NbS$_3$ crystals into high-aspect ratio quasi-1D fillers dispersed in a mixture of isopropyl alcohol and ethylene glycol solution. The results of the electrical measurements of two-terminal electronic test str…
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We report on the solution processing and testing of electronic ink comprised of quasi-one-dimensional NbS$_3$ charge-density-wave fillers. The ink was prepared by liquid-phase exfoliation of NbS$_3$ crystals into high-aspect ratio quasi-1D fillers dispersed in a mixture of isopropyl alcohol and ethylene glycol solution. The results of the electrical measurements of two-terminal electronic test structures printed on silicon substrates reveal resistance anomalies in the temperature range of ~330 K to 370 K. It was found that the changes in the temperature-dependent resistive characteristics of the test structures originate from the charge-density-wave phase transition of individual NbS$_3$ fillers. The latter confirms that the exfoliated NbS$_3$ fillers preserve their intrinsic charge-density-wave quantum condensate states and can undergo phase transitions above room temperature even after chemical exfoliation processes and printing. These results are important for developing "quantum inks" with charge-density-wave fillers for the increased functionality of future solution-processed electronics.
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Submitted 13 April, 2024;
originally announced April 2024.
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Electrical-Field Modulation of the Charge-Density-Wave Quantum Condensate in h-BN/NbS$_3$ Heterostructure Devices
Authors:
Maedeh Taheri,
Nicholas Sesing,
Tina,
T. Salguero,
Alexander A. Balandin
Abstract:
We report on the field-effect modulation of the charge-density-wave quantum condensate in the top-gated heterostructure devices implemented with quasi-one-dimensional NbS$_3$ nanowire channels and quasi-two-dimensional h-BN gate dielectric layers. The charge-density-wave phases and collective current in quasi-1D NbS$_3$ nanowires were verified via temperature dependence of the resistivity, non-lin…
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We report on the field-effect modulation of the charge-density-wave quantum condensate in the top-gated heterostructure devices implemented with quasi-one-dimensional NbS$_3$ nanowire channels and quasi-two-dimensional h-BN gate dielectric layers. The charge-density-wave phases and collective current in quasi-1D NbS$_3$ nanowires were verified via temperature dependence of the resistivity, non-linear current-voltage characteristics, and Shapiro steps that appeared in the device response under radio frequency excitation mixed with the DC bias. It was demonstrated that the electric field of the applied gate bias can reversibly modulate the collective current of the sliding charge-density-wave condensate. The collective current reduces with more positive bias suggesting a surface effect on the condensate mobility. The single particle current, at small source-drain biases, shows small amplitude fluctuation behavior, attributed to the variations in the background potential due to the pinned or creeping charge-density-wave condensate. The knowledge of the electric-field effect on the charge density waves in quasi-1D NbS$_3$ nanowires is useful for potential electronic applications of such quantum materials.
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Submitted 29 October, 2023;
originally announced October 2023.
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Quantum Composites with the Functionality Defined by the Charge-Density-Wave Phase Transitions
Authors:
Zahra Barani,
Tekwam Geremew,
Megan Stokey,
Nicholas Sesing,
Maedeh Taheri,
Matthew J. Hilfiker,
Fariborz Kargar,
Mathias Schubert,
Tina T. Salguero,
Alexander A. Balandin
Abstract:
We demonstrate a unique class of advanced materials - quantum composites based on polymers with fillers comprised of a van der Waals quantum material that reveals multiple charge-density-wave quantum condensate phases. Materials that exhibit quantum phenomena are typically crystalline, pure, and have few defects because disorder destroys the coherence of the electrons and phonons, leading to colla…
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We demonstrate a unique class of advanced materials - quantum composites based on polymers with fillers comprised of a van der Waals quantum material that reveals multiple charge-density-wave quantum condensate phases. Materials that exhibit quantum phenomena are typically crystalline, pure, and have few defects because disorder destroys the coherence of the electrons and phonons, leading to collapses of the quantum states. We succeeded in preserving the macroscopic charge-density-wave phases of filler particles after multiple composite processing steps. The prepared composites manifest strong charge-density-wave phenomena even above room temperature. The dielectric constant experiences more than two orders of magnitude enhancement while the material maintains its electrically insulating properties, opening a venue for advanced applications in energy storage and electronics. The results present a conceptually different approach for engineering the properties of materials, extending the application domain for van der Waals materials.
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Submitted 21 February, 2023;
originally announced February 2023.
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Specifics of the Elemental Excitations in "True One-Dimensional" MoI$_3$ van der Waals Nanowires
Authors:
Fariborz Kargar,
Zahra Barani,
Nicholas R. Sesing,
Thuc T. Mai,
Topojit Debnath,
Huairuo Zhang,
Yuhang Liu,
Yanbing Zhu,
Subhajit Ghosh,
Adam J. Biacchi,
Felipe H. da Jornada,
Ludwig Bartels,
Tehseen Adel,
Angela R. Hight Walker,
Albert V. Davydov,
Tina T. Salguero,
Roger K. Lake,
Alexander A. Balandin
Abstract:
We report on the temperature evolution of the polarization-dependent Raman spectrum of exfoliated MoI$_3$, a van der Waals material with a "true one-dimensional" crystal structure that can be exfoliated to individual atomic chains. The temperature evolution of several Raman features reveals anomalous behavior suggesting a phase transition of a magnetic origin. Theoretical considerations indicate t…
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We report on the temperature evolution of the polarization-dependent Raman spectrum of exfoliated MoI$_3$, a van der Waals material with a "true one-dimensional" crystal structure that can be exfoliated to individual atomic chains. The temperature evolution of several Raman features reveals anomalous behavior suggesting a phase transition of a magnetic origin. Theoretical considerations indicate that MoI$_3$ is an easy-plane antiferromagnet with alternating spins along the dimerized chains and with inter-chain helical spin ordering. The calculated frequencies of the phonons and magnons are consistent with the interpretation of the experimental Raman data. The obtained results shed light on the specifics of the phononic and magnonic states in MoI$_3$ and provide a strong motivation for future study of this unique material with potential for spintronic device applications.
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Submitted 10 October, 2022;
originally announced October 2022.
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Electrical Gating of the Charge-Density-Wave Phases in Quasi-2D h-BN/1T-TaS$_2$ Devices
Authors:
Maedeh Taheri,
Jonas Brown,
Adil Rehman,
Nicholas R. Sesing,
Fariborz Kargar,
Tina T. Salguero,
Sergey Rumyantsev,
Alexander A. Balandin
Abstract:
We report on electrical gating of the charge-density-wave phases and current in h-BN capped three-terminal 1T-TaS$_2$ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage hysteresis associated with the transition between the nearly commensurate and incommensurate charge-density wave phases. The evolution of the hysteresis and th…
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We report on electrical gating of the charge-density-wave phases and current in h-BN capped three-terminal 1T-TaS$_2$ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage hysteresis associated with the transition between the nearly commensurate and incommensurate charge-density wave phases. The evolution of the hysteresis and the presence of abrupt spikes in the current while sweeping the gate voltage suggest that the effect is electrical rather than self-heating. We attribute the gating to an electric-field effect on the commensurate charge-density-wave domains in the atomic planes near the gate dielectric. The transition between the nearly commensurate and incommensurate charge-density-wave phases can be induced by both the source-drain current and the electrostatic gate. Since the charge-density-wave phases are persistent in 1T-TaS2 at room temperature, one can envision memory applications of such devices when scaled down to the dimensions of individual commensurate domains and few-atomic plane thicknesses.
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Submitted 10 August, 2022;
originally announced August 2022.
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Low-Frequency Noise in Quasi-1D (TaSe$_4$)$_2$I Weyl Semimetal Nanoribbons
Authors:
Subhajit Ghosh,
Fariborz Kargar,
Nick R. Sesing,
Zahra Barani,
Tina T. Salguero,
Dong Yan,
Sergey Rumyantsev,
Alexander A. Balandin
Abstract:
We report on low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional (TaSe$_4$)$_2$I Weyl semimetal nanoribbons. It was found that the noise spectral density is of the 1/f type and scales with the square of the current, S~I^2 (f is the frequency). The noise spectral density increases by almost an order of magnitude and develops Lorentzian features near the temperature T…
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We report on low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional (TaSe$_4$)$_2$I Weyl semimetal nanoribbons. It was found that the noise spectral density is of the 1/f type and scales with the square of the current, S~I^2 (f is the frequency). The noise spectral density increases by almost an order of magnitude and develops Lorentzian features near the temperature T~225 K. These spectral changes were attributed to the charge-density-wave phase transition even though the temperature of the noise maximum deviates from the reported Peierls transition temperature in bulk (TaSe$_4$)$_2$I crystals. The noise level, normalized by the channel area, in these Weyl semimetal nanoribbons was surprisingly low, $\sim 10^{-9}$ um$^2$Hz$^{-1}$ at f=10 Hz, when measured below and above the Peierls transition temperature. Obtained results shed light on the specifics of electron transport in quasi-1D topological Weyl semimetals and can be important for their proposed applications as downscaled interconnects.
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Submitted 12 August, 2022;
originally announced August 2022.
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One-Dimensional van der Waals Quantum Materials -- State of the Art and Perspectives
Authors:
Alexander A. Balandin,
Fariborz Kargar,
Tina T. Salguero,
Roger K. Lake
Abstract:
The advent of graphene and other two-dimensional van der Waals materials, with their unique electrical, optical, and thermal properties, has resulted in tremendous progress for fundamental science. Recent developments suggest that taking one more step down in dimensionality - from monolayer, atomic sheets to individual atomic chains - can bring exciting prospects as the ultimate limit in material…
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The advent of graphene and other two-dimensional van der Waals materials, with their unique electrical, optical, and thermal properties, has resulted in tremendous progress for fundamental science. Recent developments suggest that taking one more step down in dimensionality - from monolayer, atomic sheets to individual atomic chains - can bring exciting prospects as the ultimate limit in material downscaling is reached while establishing an entirely new field of one-dimensional quantum materials. Here we review this emerging area of one-dimensional van der Waals quantum materials and anticipate its future directions. We focus on quantum effects associated with the charge-density-wave condensate, strongly-correlated phenomena, topological phases, and other unique physical characteristics, which are attainable specifically in van der Waals materials of lower dimensionality. Possibilities for engineering the properties of quasi-one-dimensional materials via compositional changes, vacancies, and defects, as well as the prospects of their applications in composites are also discussed.
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Submitted 26 February, 2022;
originally announced February 2022.
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Charge-Density-Wave Devices Printed with the Ink of Chemically Exfoliated 1T-TaS$_2$ Fillers
Authors:
Saba Baraghani,
Zahra Barani,
Yassamin Ghafouri,
Amirmahdi Mohammadzadeh,
Sriharsha Sudhindra,
Tina T. Salguero,
Fariborz Kargar,
Alexander A. Balandin
Abstract:
We report on the preparation of inks containing fillers derived from quasi-two-dimensional charge-density-wave materials, their application for inkjet printing, and the evaluation of their electronic properties in printed thin film form. The inks were prepared by liquid-phase exfoliation of CVT-grown 1T-TaS$_2$ crystals to produce fillers with nm-scale thickness and um-scale lateral dimensions. Ex…
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We report on the preparation of inks containing fillers derived from quasi-two-dimensional charge-density-wave materials, their application for inkjet printing, and the evaluation of their electronic properties in printed thin film form. The inks were prepared by liquid-phase exfoliation of CVT-grown 1T-TaS$_2$ crystals to produce fillers with nm-scale thickness and um-scale lateral dimensions. Exfoliated 1T-TaS$_2$ was dispersed in a mixture of isopropyl alcohol and ethylene glycol to allow fine-tuning of their thermo-physical properties for inkjet printing. The temperature-dependent electrical and current fluctuation measurements of printed thin films demonstrated that the charge-density-wave properties of 1T-TaS$_2$ are preserved after processing. The functionality of the printed thin-film devices can be defined by the nearly-commensurate to commensurate charge-density-wave phase transition of individual exfoliated 1T-TaS$_2$ fillers rather than by electron-hopping transport between them. These results provide pathways for the development of printed electronics with diverse functionality achieved by the incorporation of quasi-two-dimensional van der Waals quantum materials.
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Submitted 15 January, 2022;
originally announced January 2022.
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Metallic vs. Semiconducting Properties of Quasi-One-Dimensional Tantalum Selenide van der Waals Nanoribbons
Authors:
Fariborz Kargar,
Andrey Krayev,
Michelle Wurch,
Yassamin Ghafouri,
Topojit Debnath,
Darshana Wickramaratne,
Tina T. Salguero,
Roger Lake,
Ludwig Bartels,
Alexander A. Balandin
Abstract:
We conducted a tip-enhanced Raman scattering spectroscopy (TERS) and photoluminescence (PL) study of quasi-1D TaSe3 nanoribbons exfoliated onto gold substrates. At a selenium deficiency of ~0.25 (Se/Ta=2.75,), the nanoribbons exhibit a strong, broad PL peak centered around ~920 nm (1.35 eV), suggesting their semiconducting behavior. Such nanoribbons revealed a strong TERS response under 785-nm las…
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We conducted a tip-enhanced Raman scattering spectroscopy (TERS) and photoluminescence (PL) study of quasi-1D TaSe3 nanoribbons exfoliated onto gold substrates. At a selenium deficiency of ~0.25 (Se/Ta=2.75,), the nanoribbons exhibit a strong, broad PL peak centered around ~920 nm (1.35 eV), suggesting their semiconducting behavior. Such nanoribbons revealed a strong TERS response under 785-nm laser excitation, allowing for their nanoscale spectroscopic imaging. Nanoribbons with a smaller selenium deficiency of ~0.15 (Se/Ta=2.85) did not show any PL or TERS response. The confocal Raman spectra of these samples agree with the previously-reported spectra of metallic TaSe3. The differences in the optical response of the nanoribbons examined in this study suggest that even small variations in Se content can induce changes in electronic structure, causing samples to exhibit either metallic or semiconducting character. The temperature-dependent electrical measurements of devices fabricated with both types of materials corroborate these observations. The density-functional-theory calculations revealed that incorporation of an oxygen atom in a Se vacancy can result in band gap opening and thus enable the transition from a metal to a semiconductor. However, the predicted bandgap is substantially smaller than that derived from PL data. These results indicate that the properties of van der Waals materials can vary significantly depending on stoichiometry, defect types and concentration, and possibly environmental and substrate effects. In view of this finding, local probing of nanoribbon properties with TERS becomes essential to understanding such low-dimensional systems.
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Submitted 24 November, 2021;
originally announced November 2021.
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Electromagnetic-Polarization Selective Composites with Quasi-1D van der Waals Metallic Fillers
Authors:
Zahra Barani,
Fariborz Kargar,
Yassamin Ghafouri,
Saba Baraghani,
Sriharsha Sudhindra,
Amirmahdi Mohammadzadeh,
Tina T. Salguero,
Alexander A. Balandin
Abstract:
We report on the preparation of flexible polymer composite films with aligned metallic fillers comprised of atomic chain bundles of the quasi-one-dimensional (1D) van der Waals material tantalum triselenide, TaSe3. The material functionality, embedded at the nanoscale level, is achieved by mimicking the design of an electromagnetic aperture grid antenna. The processed composites employ chemically…
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We report on the preparation of flexible polymer composite films with aligned metallic fillers comprised of atomic chain bundles of the quasi-one-dimensional (1D) van der Waals material tantalum triselenide, TaSe3. The material functionality, embedded at the nanoscale level, is achieved by mimicking the design of an electromagnetic aperture grid antenna. The processed composites employ chemically exfoliated TaSe3 nanowires as the grid building blocks incorporated within the thin film. Filler alignment is achieved using the "blade coating" method. Measurements conducted in the X-band frequency range demonstrate that the electromagnetic transmission through such films can be varied significantly by changing the relative orientations of the quasi-1D fillers and the polarization of the electromagnetic wave. We argue that such polarization-sensitive polymer films with quasi-1D fillers are applicable to advanced electromagnetic interference shielding in future communication systems.
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Submitted 9 February, 2021;
originally announced February 2021.
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Electrically-Insulating Flexible Films with Quasi-One-Dimensional van-der-Waals Fillers as Efficient Electromagnetic Shields
Authors:
Zahra Barani,
Fariborz Kargar,
Yassamin Ghafouri,
Subhajit Ghosh,
Konrad Godziszewski,
Saba Seyedmahmoudbaraghani,
Yevhen Yashchyshyn,
Grzegorz Cywiński,
Sergey Rumyantsev,
Tina T. Salguero,
Alexander A. Balandin
Abstract:
We report polymer composite films containing fillers comprised of quasi-one-dimensional (1D) van der Waals materials, specifically transition metal trichalcogenides containing 1D structural motifs that enable their exfoliation into bundles of atomic threads. These nanostructures are characterized by extremely large aspect ratios of up to 10^6. The polymer composites with low loadings of quasi-1D T…
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We report polymer composite films containing fillers comprised of quasi-one-dimensional (1D) van der Waals materials, specifically transition metal trichalcogenides containing 1D structural motifs that enable their exfoliation into bundles of atomic threads. These nanostructures are characterized by extremely large aspect ratios of up to 10^6. The polymer composites with low loadings of quasi-1D TaSe3 fillers (below 3 vol. %) revealed excellent electromagnetic interference shielding in the X-band GHz and EHF sub-THz frequency ranges, while remaining DC electrically insulating. The unique electromagnetic shielding characteristics of these films are attributed to effective coupling of the electromagnetic waves to the high-aspect-ratio electrically-conductive TaSe3 atomic-thread bundles even when the filler concentration is below the electrical percolation threshold. These novel films are promising for high-frequency communication technologies, which require electromagnetic shielding films that are flexible, lightweight, corrosion resistant, electrically insulating and inexpensive.
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Submitted 20 January, 2021;
originally announced January 2021.
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Electric Switching of the Charge-Density-Wave and Normal Metallic Phases in Tantalum Disulfide Thin-Film Devices
Authors:
A. Geremew,
S. Rumyantsev,
F. Kargar,
B. Debnath,
A. Nosek,
M. Bloodgood,
M. Bockrath,
T. Salguero,
R. K. Lake,
A. A. Balandin
Abstract:
We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temperature range, from 77 K to 400 K. The low-frequency electronic noise spectrosco…
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We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temperature range, from 77 K to 400 K. The low-frequency electronic noise spectroscopy has been used as an effective tool for monitoring the transitions, particularly the switching from the incommensurate charge-density-wave phase to the normal metal phase. The noise spectral density exhibits sharp increases at the phase transition points, which correspond to the step-like changes in resistivity. Assignment of the phases is consistent with low-field resistivity measurements over the temperature range from 77 K to 600 K. Analysis of the experimental data and calculations of heat dissipation suggest that Joule heating plays a dominant role in the electric-field induced transitions in the tested 1T-TaS2 devices on Si/SiO2 substrates. The possibility of electrical switching among four different phases of 1T-TaS2 is a promising step toward nanoscale device applications. The results also demonstrate the potential of noise spectroscopy for investigating and identifying phase transitions in materials.
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Submitted 14 March, 2019;
originally announced March 2019.
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Low-Frequency Noise Spectroscopy of Charge-Density-Wave Phase Transitions in Vertical Quasi-2D Devices
Authors:
Ruben Salgado,
Amirmahdi Mohammadzadeh,
Fariborz Kargar,
Adane Geremew,
Chun-Yu Huang,
Matthew A. Bloodgood,
Sergey Rumyantsev,
Tina T. Salguero,
Alexander A. Balandin
Abstract:
We report results regarding the electron transport in vertical quasi-2D layered 1T-TaS2 charge-density-wave devices. The low-frequency noise spectroscopy was used as a tool to study changes in the cross-plane electrical characteristics of the quasi-2D material below room temperature. The noise spectral density revealed strong peaks - changing by more than an order-of-magnitude - at the temperature…
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We report results regarding the electron transport in vertical quasi-2D layered 1T-TaS2 charge-density-wave devices. The low-frequency noise spectroscopy was used as a tool to study changes in the cross-plane electrical characteristics of the quasi-2D material below room temperature. The noise spectral density revealed strong peaks - changing by more than an order-of-magnitude - at the temperatures closely matching the electrical resistance steps. Some of the noise peaks appeared below the temperature of the commensurate to nearly-commensurate charge-density-wave transition, possibly indicating the presence of the debated "hidden" phase transitions. These results confirm the potential of the noise spectroscopy for investigations of electron transport and phase transitions in novel materials.
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Submitted 5 January, 2019;
originally announced January 2019.
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Proton-Irradiation-Immune Electronics Implemented with Two-Dimensional Charge-Density-Wave Devices
Authors:
A. Geremew,
F. Kargar,
E. X. Zhang,
S. E. Zhao,
E. Aytan,
M. A. Bloodgood,
T. T. Salguero,
S. Rumyantsev,
A. Fedoseyev,
D. M. Fleetwood,
A. A. Balandin
Abstract:
Proton radiation damage is an important failure mechanism for electronic devices in near-Earth orbits, deep space and high energy physics facilities. Protons can cause ionizing damage and atomic displacements, resulting in device degradation and malfunction. Shielding of electronics increases the weight and cost of the systems but does not eliminate destructive single events produced by energetic…
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Proton radiation damage is an important failure mechanism for electronic devices in near-Earth orbits, deep space and high energy physics facilities. Protons can cause ionizing damage and atomic displacements, resulting in device degradation and malfunction. Shielding of electronics increases the weight and cost of the systems but does not eliminate destructive single events produced by energetic protons. Modern electronics based on semiconductors - even those specially designed for radiation hardness - remain highly susceptible to proton damage. Here we demonstrate that room temperature (RT) charge-density-wave (CDW) devices with quasi-two-dimensional (2D) 1T-TaS2 channels show remarkable immunity to bombardment with 1.8 MeV protons to a fluence of at least 10^14 H+cm^2. Current-voltage I-V characteristics of these 2D CDW devices do not change as a result of proton irradiation, in striking contrast to most conventional semiconductor devices or other 2D devices. Only negligible changes are found in the low-frequency noise spectra. The radiation immunity of these "all-metallic" CDW devices can be attributed to their two-terminal design, quasi-2D nature of the active channel, and high concentration of charge carriers in the utilized CDW phases. Such devices, capable of operating over a wide temperature range, can constitute a crucial segment of future electronics for space, particle accelerator and other radiation environments.
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Submitted 2 January, 2019;
originally announced January 2019.
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Anomalous Characteristics of the Generation - Recombination Noise in Quasi-One-Dimensional Van der Waals Nanoribbons
Authors:
Adane K. Geremew,
Sergey Rumyantsev,
Matthew A. Bloodgood,
Tina T. Salguero,
Alexander A. Balandin
Abstract:
We describe the low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional ZrTe3 van der Waals nanoribbons, which have recently attracted attention owing to their extraordinary high current carrying capacity. Whereas the low-frequency noise spectral density reveals 1/f behavior near room temperature, it is dominated by the Lorentzian bulges of the generation - recombinatio…
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We describe the low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional ZrTe3 van der Waals nanoribbons, which have recently attracted attention owing to their extraordinary high current carrying capacity. Whereas the low-frequency noise spectral density reveals 1/f behavior near room temperature, it is dominated by the Lorentzian bulges of the generation - recombination noise at low temperatures (f is the frequency). Unexpectedly, the corner frequency of the observed Lorentzian peaks shows strong sensitivity to the applied source - drain bias. This dependence on electric field can be explained by the Frenkel-Poole effect in the scenario where the voltage drop happens predominantly on the defects, which block the quasi-1D conduction channels. We also have found that the activation energy of the characteristic frequencies of the G-R noise in quasi-1D ZrTe3 is defined primarily by the temperature dependence of the capture cross-section of the defects rather than by their energy position. These results are important for the application of quasi-1D van der Waals materials in ultimately downscaled electronics.
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Submitted 28 August, 2018;
originally announced August 2018.
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Low-Frequency Noise and Sliding of the Charge Density Waves in Two-Dimensional Materials
Authors:
Guanxiong Liu,
Sergey Rumyantsev,
Matthew. A. Bloodgood,
Tina T. Salguero,
Alexander A. Balandin
Abstract:
There has been a recent renewal of interest in charge-density-wave (CDW) phenomena, primarily driven by the emergence of two-dimensional (2D) layered CDW materials, such as 1T-TaS2, characterized by very high transition temperatures to CDW phases. In the extensively studied classical bulk CDW materials with quasi-1D crystal structure, the charge carrier transport exhibits intriguing sliding behavi…
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There has been a recent renewal of interest in charge-density-wave (CDW) phenomena, primarily driven by the emergence of two-dimensional (2D) layered CDW materials, such as 1T-TaS2, characterized by very high transition temperatures to CDW phases. In the extensively studied classical bulk CDW materials with quasi-1D crystal structure, the charge carrier transport exhibits intriguing sliding behavior, which reveals itself in the frequency domain as "narrowband" and "broadband" noise. Despite the increasing attention on physics of 2D CDWs, there have been few reports of CDW sliding, specifically in quasi-2D rare-earth tritellurides and none on the noise in any of 2D CDW systems. Here we report the results of low-frequency noise (LFN) measurements on 1T-TaS2 thin films - archetypal 2D CDW systems, as they are driven from the nearly commensurate (NC) to incommensurate (IC) CDW phases by voltage and temperature stimuli. We have found that noise in 1T-TaS2 devices has two pronounced maxima at the bias voltages, which correspond to the onset of CDW sliding and the NC-to-IC phase transition. We observed unusual Lorentzian noise features and exceptionally strong noise dependence on electric bias and temperature. We argue that LFN in 2D CDW systems has unique physical origin, different from known fundamental noise types. The specifics of LFN in 2D CDW materials can be explained by invoking the concept of interacting discrete fluctuators in the NC-CDW phase. Noise spectroscopy can serve as a useful tool for understanding electronic transport phenomena in 2D CDW materials characterized by coexistence of different phases and strong CDW pinning.
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Submitted 7 February, 2018;
originally announced February 2018.
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Total Ionizing Dose Effects on Threshold Switching in 1T-Tantalum Disulfide Charge-Density-Wave Devices
Authors:
G. Liu,
E. X. Zhang,
C. D. Liang,
M. A. Bloodgood,
T. T. Salguero,
D. M. Fleetwood,
A. A. Balandin
Abstract:
The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T-TaS2 at doses up…
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The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T-TaS2 at doses up to 1 Mrad(SiO2). The threshold voltage changed by less than 2% after irradiation, with persistent self-sustained oscillations observed through the full irradiation sequence. The radiation hardness is attributed to the high intrinsic carrier concentration of 1T-TaS2 in both of the phases that lead to threshold switching. These results suggest that charge density wave devices, implemented with thin films of 1T-TaS2, are promising for applications in high radiation environments.
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Submitted 18 October, 2017;
originally announced December 2017.
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Low-Frequency Electronic Noise in Exfoliated Quasi-1D TaSe3 van Der Waals Nanowires
Authors:
Guanxiong Liu,
Sergey Rumyantsev,
Matthew A. Bloodgood,
Tina T. Salguero,
Michael Shur,
Alexander A. Balandin
Abstract:
We report results of investigation of the low-frequency electronic excess noise in quasi-1D nanowires of TaSe3 capped with quasi-2D h-BN layers. Semi-metallic TaSe3 is a quasi-1D van der Waals material with exceptionally high breakdown current density. It was found that TaSe3 nanowires have lower levels of the normalized noise spectral density, compared to carbon nanotubes and graphene. The temper…
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We report results of investigation of the low-frequency electronic excess noise in quasi-1D nanowires of TaSe3 capped with quasi-2D h-BN layers. Semi-metallic TaSe3 is a quasi-1D van der Waals material with exceptionally high breakdown current density. It was found that TaSe3 nanowires have lower levels of the normalized noise spectral density, compared to carbon nanotubes and graphene. The temperature-dependent measurements revealed that the low-frequency electronic 1/f noise becomes the 1/f^2-type as temperature increases to about 400 K, suggesting the onset of electromigration (f is the frequency). Using the Dutta- Horn random fluctuation model of the electronic noise in metals we determined that the noise activation energy for quasi-1D TaSe3 nanowires is approximately E_P=1.0 eV. In the framework of the empirical noise model for metallic interconnects, the extracted activation energy, related to electromigration, is E_A=0.88 eV, consistent with that for Cu and Al interconnects. Our results shed light on the physical mechanism of low-frequency 1/f noise in quasi-1D van der Waals semi-metals and suggest that such material systems have potential for ultimately downscaled local interconnect applications.
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Submitted 16 October, 2016;
originally announced October 2016.
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Breakdown Current Density in BN-Capped Quasi-1D TaSe3 Metallic Nanowires: Prospects of Interconnect Applications
Authors:
Maxim A. Stolyarov,
Guanxiong Liu,
Matthew A. Bloodgood,
Ece Aytan,
Chenglong Jiang,
Rameez Samnakay,
Tina T. Salguero,
Denis L. Nika,
Krassimir N. Bozhilov,
Alexander A. Balandin
Abstract:
We report results of investigation of the current-carrying capacity of nanowires made from the quasi-1D van der Waals metal tantalum triselenide capped with quasi-2D boron nitride. The chemical vapor transport method followed by chemical and mechanical exfoliation were used to fabricate mm-long TaSe3 wires with lateral dimensions in the 20 to 70 nm range. Electrical measurements establish that TaS…
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We report results of investigation of the current-carrying capacity of nanowires made from the quasi-1D van der Waals metal tantalum triselenide capped with quasi-2D boron nitride. The chemical vapor transport method followed by chemical and mechanical exfoliation were used to fabricate mm-long TaSe3 wires with lateral dimensions in the 20 to 70 nm range. Electrical measurements establish that TaSe3/h-BN nanowire heterostructures have a breakdown current density exceeding 10 MA/cm2 - an order-of-magnitude higher than that in copper. Some devices exhibited an intriguing step-like breakdown, which can be explained by the atomic thread bundle structure of the nanowires. The quasi-1D single crystal nature of TaSe3 results in low surface roughness and the absence of grain boundaries; these features potentially can enable the downscaling of these wires to lateral dimensions in the few-nm range. These results suggest that quasi-1D van der Waals metals have potential for applications in the ultimately downscaled local interconnects.
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Submitted 11 April, 2016;
originally announced April 2016.
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An Integrated Tantalum Sulfide - Boron Nitride - Graphene Oscillator: A Charge-Density-Wave Device Operating at Room Temperature
Authors:
Guanxiong Liu,
Bishwajit Debnath,
Timothy R. Pope,
Tina T. Salguero,
Roger K. Lake,
Alexander A. Balandin
Abstract:
The charge-density-wave (CDW) phase is a macroscopic quantum state consisting of a periodic modulation of the electronic charge density accompanied by a periodic distortion of the atomic lattice in quasi-1D or layered 2D metallic crystals. Several layered transition metal dichalcogenides, such as 1T-TaSe2, 1T-TaS2 and 1T-TiSe2, exhibit unusually high transition temperatures to different CDW symmet…
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The charge-density-wave (CDW) phase is a macroscopic quantum state consisting of a periodic modulation of the electronic charge density accompanied by a periodic distortion of the atomic lattice in quasi-1D or layered 2D metallic crystals. Several layered transition metal dichalcogenides, such as 1T-TaSe2, 1T-TaS2 and 1T-TiSe2, exhibit unusually high transition temperatures to different CDW symmetry-reducing phases. These transitions can be affected by environmental conditions, film thickness and applied electric bias. However, device applications of these intriguing systems at room temperature or their integration with other 2D materials have not been explored. Here we show that in 2D CDW 1T-TaS2, the abrupt change in the electrical conductivity and hysteresis at the transition point between nearly-commensurate and incommensurate charge-density-wave phases can be used for constructing an oscillator that operates at room temperature. The hexagonal boron nitride was capped on 1T-TaS2 thin film to provide protection from oxidation, and an integrated graphene transistor provides a voltage tunable, matched, low-resistance load enabling precise voltage control of the oscillator frequency. The integration of these three disparate two-dimensional materials, in a way that exploits the unique properties of each, yields a simple, miniaturized, voltage-controlled oscillator device. Theoretical considerations suggest that the upper limit of oscillation frequency to be in the THz regime.
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Submitted 16 February, 2016;
originally announced February 2016.
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The Commensurate-Incommensurate Charge-Density-Wave Transition and Phonon Zone Folding in 1T-TaSe2 Thin Films
Authors:
R. Samnakay,
D. Wickramaratne,
T. R. Pope,
R. K. Lake,
T. T. Salguero,
A. A. Balandin
Abstract:
Bulk 1T-TaSe2 exhibits unusually high charge density wave (CDW) transition temperatures of 600 K and 473 K below which the material exists in the incommensurate (I-CDW) and the commensurate (C-CDW) charge-density-wave phases, respectively. The C-CDW reconstruction of the lattice coincides with new Raman peaks resulting from zone-folding of phonon modes from middle regions of the original Brillouin…
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Bulk 1T-TaSe2 exhibits unusually high charge density wave (CDW) transition temperatures of 600 K and 473 K below which the material exists in the incommensurate (I-CDW) and the commensurate (C-CDW) charge-density-wave phases, respectively. The C-CDW reconstruction of the lattice coincides with new Raman peaks resulting from zone-folding of phonon modes from middle regions of the original Brillouin zone back to the Gamma point. The C-CDW transition temperatures as a function of film thickness are determined from the evolution of these new Raman peaks and they are found to decrease from 473K to 413K as the film thicknesses decrease from 150 nm to 35 nm. A comparison of the Raman data with ab initio calculations of both the normal and C-CDW phases gives a consistent picture of the zone-folding of the phonon modes following lattice reconstruction. In the I-CDW phase, the loss of translational symmetry coincides with a strong suppression and broadening of the Raman peaks. The observed change in the C-CDW transition temperature is consistent with total energy calculations of bulk and monolayer 1T-TaSe2.
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Submitted 23 March, 2015;
originally announced March 2015.
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All-Metallic Electrically-Gated Tantalum Diselenide Switches and Logic Circuits
Authors:
J. Renteria,
R. Samnakay,
C. Jiang,
T. R. Pope,
P. Goli,
Z. Yan,
D. Wickramaratne,
T. T. Salguero,
A. G. Khitun,
R. K. Lake,
A. A. Balandin
Abstract:
We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, u…
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We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe2-Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used in principle for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.
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Submitted 24 December, 2013;
originally announced December 2013.
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Phonon and Thermal Properties of Exfoliated Tantalum Diselenide Thin Films
Authors:
Z. Yan,
C. Jiang,
T. R. Pope,
C. F. Tsang,
J. L. Stickney,
P. Goli,
J. Renteria,
T. T. Salguero,
A. A. Balandin
Abstract:
We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe2) obtained via the graphene-like mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from the Si substrate and the E2g peak of TaSe2 presents a convenient metric for quantifying film thickness. The temperature coefficients for two main Raman…
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We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe2) obtained via the graphene-like mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from the Si substrate and the E2g peak of TaSe2 presents a convenient metric for quantifying film thickness. The temperature coefficients for two main Raman peaks, A1g and E2g, are -0.013 and -0.0097 cm-1/oC, respectively. The Raman optothermal measurements indicate that the room temperature thermal conductivity in these films decreases from its bulk value of ~16 W/mK to ~9 W/mK in 45-nm thick films. The measurement of electrical resistivity of the field-effect devices with TaSe2 channels indicates that heat conduction is dominated by acoustic phonons in these van der Waals films. The scaling of thermal conductivity with the film thickness suggests that the phonon scattering from the film boundaries is substantial despite the sharp interfaces of the mechanically cleaved samples. These results are important for understanding the thermal properties of thin films exfoliated from TaSe2 and other metal dichalcogenides, as well as for evaluating self-heating effects in devices made from such materials.
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Submitted 9 November, 2013;
originally announced November 2013.
