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Simultaneous active and diffusive behaviour of asymmetric microclusters in a photophoretic trap
Authors:
Anita Pahi,
Kirty Ranjan Sahoo,
Biswajit Das,
Shuvojit Paul,
Ayan Banerjee
Abstract:
Active and diffusive motion in Brownian particles are regularly observed in fluidic environments, albeit at different time scales. Here, we experimentally study the dynamics of highly asymmetric microclusters trapped in air employing photophoretic forces generated from a loosely focused laser beam, where the trapped particles display active and diffusive dynamics simultaneously in orthogonal spati…
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Active and diffusive motion in Brownian particles are regularly observed in fluidic environments, albeit at different time scales. Here, we experimentally study the dynamics of highly asymmetric microclusters trapped in air employing photophoretic forces generated from a loosely focused laser beam, where the trapped particles display active and diffusive dynamics simultaneously in orthogonal spatial directions. Thus, particle motion in the longitudinal direction ($z$) is enslaved to irregular kicks that naturally arise from an interplay of gravitational and photophoretic forces. This leads to a bimodal nature of the probability distribution function with a near-ballistic scaling of mean-squared displacement in the $z$ direction demonstrating active like dynamics, while the dynamics along the transverse ($x$) direction displays diffusive behaviour with a strong dependence on the motion along $z$. To explain these unique characteristics, we developed a 2D-Langevin model of a confined elliptic particle experiencing an additional stochastic force along $z$ to account for the arbitrary jumps. The numerical results show excellent qualitative agreement with the experimental observations. Our findings should pave the way for the design of high-efficiency Brownian engines in air, besides stimulating new research in the emerging field of photophoretic trapping.
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Submitted 31 March, 2025; v1 submitted 20 March, 2025;
originally announced March 2025.
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Vanadium Doped Magnetic MoS2 Monolayers of Improved Electrical Conductivity as Spin-Orbit Torque Layer
Authors:
Krishna Rani Sahoo,
Manoj Talluri,
Dipak Maity,
Suman Mundlia,
Ashique Lal,
M. S. Devapriya,
Arabinda Haldar,
Chandrasekhar Murapaka,
Tharangattu N. Narayanan
Abstract:
Two-dimensional (2D) transition metal di-chalcogenide layers with high electrical conductivity and spin-orbit coupling (SOC) can find huge potential in spintronic devices. With limited success of 2D spin Hall material development, we demonstrate vanadium (V) substitutionally doped monolayer MoS2 (VMS) as a potential spin Hall material having tunable electrical conductivity, SOC strength, and room…
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Two-dimensional (2D) transition metal di-chalcogenide layers with high electrical conductivity and spin-orbit coupling (SOC) can find huge potential in spintronic devices. With limited success of 2D spin Hall material development, we demonstrate vanadium (V) substitutionally doped monolayer MoS2 (VMS) as a potential spin Hall material having tunable electrical conductivity, SOC strength, and room temperature magnetism. Systematic enhancement in the electrical conductivity is observed with the extent of V doping, where it is enhanced from ~0.3 S/m of MoS2 to ~100000 S/m upon doping to the level of 9 atomic%. Ferromagnetic resonance (FMR) based spin-pumping experiments indicate the spin transport across the junction of permalloy (Py) and VMS. Spin-torque FMR measurements demonstrate the suggesting latter's potential as a spin-orbit torque layer in 2D spintronic devices.
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Submitted 14 November, 2024;
originally announced November 2024.
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High-Sensitivity Characterization of Ultra-Thin Atomic Layers using Spin-Hall Effect of Light
Authors:
Janmey Jay Panda,
Krishna Rani Sahoo,
Aparna Praturi,
Ashique Lal,
Nirmal K. Viswanathan,
Tharangattu N. Narayanan,
G. Rajalakshmi
Abstract:
Magnetic/non-magnetic/heterostructured ultra-thin films' characterisation is highly demanding due to the emerging diverse applications of such films. Diverse measurements are usually performed on such systems to infer their electrical, optical and magnetic properties. We demonstrate that MOKE-based spin-Hall effect of light (SHEL) is a versatile surface characterization tool for studying materials…
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Magnetic/non-magnetic/heterostructured ultra-thin films' characterisation is highly demanding due to the emerging diverse applications of such films. Diverse measurements are usually performed on such systems to infer their electrical, optical and magnetic properties. We demonstrate that MOKE-based spin-Hall effect of light (SHEL) is a versatile surface characterization tool for studying materials' magnetic and dielectric ordering. Using this technique, we measure magnetic field dependent complex Kerr angle and the coercivity in ultra-thin films of permalloy (Py) and at molybdenum disulphide (MoS$_2$) - permalloy (MSPy) hetero-structure interfaces. The measurements are compared with standard magneto-optic Kerr effect (MOKE) studies to demonstrate that SHEL-MOKE is a practical alternative to the conventional MOKE method, with competitive sensitivity. A comprehensive theoretical model and simulation data are provided to further strengthen the potential of this simple non-invasive optical method. The theoretical model is applied to extract the optical conductivity and susceptibility of non-magnetic ultra-thin layers such as MoS$_2$ .
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Submitted 10 June, 2022; v1 submitted 2 May, 2022;
originally announced May 2022.
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On the Existence of Photoluminescence and Room-Temperature Spin Polarization in Ambipolar V doped MoS$_2$ Monolayers
Authors:
Dipak Maity,
Rahul Sharma,
Krishna Rani Sahoo,
Ashique Lal,
Raul Arenal,
Tharangattu N. Narayanan
Abstract:
Opto-spintronics is an emerging field where ultra-thin magnetic-semiconductors having high spin-valley coupling play an important role. Here, we demonstrate substitutional vanadium (V) doping in MoS$_2$ lattice in different extent, leading to the coexistence of photoluminescence (PL), valleypolarization (~32%), and valley splitting (~28 meV shift in PL with helicity $σ^+$ and $σ^-$ of light excita…
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Opto-spintronics is an emerging field where ultra-thin magnetic-semiconductors having high spin-valley coupling play an important role. Here, we demonstrate substitutional vanadium (V) doping in MoS$_2$ lattice in different extent, leading to the coexistence of photoluminescence (PL), valleypolarization (~32%), and valley splitting (~28 meV shift in PL with helicity $σ^+$ and $σ^-$ of light excitation). A large V doping causes semiconductor to metal transition in MoS$_2$ but with medium level causing the existence of photoluminescence with high spin polarization. The ambipolar nature of medium level V doped MoS$_2$ is shown here indicating its potential as an opto-electronic material. The presence of V-dopants and their different level of content are proven by both spectroscopic and microscopic methods.A detailed temperature and power dependent photoluminescence studies along with density functional theory-based calculations in support unravels the emergence of the co-existence of spin-valley coupling and photoluminescence. This study shows the potential of doping MoS$_2$ for deriving new materials for next generation room temperature opto-spintronics.
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Submitted 12 April, 2022;
originally announced April 2022.
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Neutral atom scattering based mapping of atomically thin layers
Authors:
Geetika Bhardwaj,
Krishna Rani Sahoo,
Rahul Sharma,
Parswa Nath,
Pranav R. Shirhatti
Abstract:
Imaging surfaces using low energy neutral atom scattering is a relatively recent development in the field of microscopy. In this work we demonstrate that this technique is sensitive enough to distinguish films as thin as a single monolayer from the underlying substrate. Using collimated beams of He and Kr atoms as an incident probe on MoS$_2$ films grown on SiO$_2$/Si substrate, we observe systema…
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Imaging surfaces using low energy neutral atom scattering is a relatively recent development in the field of microscopy. In this work we demonstrate that this technique is sensitive enough to distinguish films as thin as a single monolayer from the underlying substrate. Using collimated beams of He and Kr atoms as an incident probe on MoS$_2$ films grown on SiO$_2$/Si substrate, we observe systematic changes in the scattered atom flux which allows us to map the thin MoS$_2$ films. Measurements carried out by varying incidence energy using both He and Kr provides insights into the details of atom-surface collision dynamics and its role in contrast generation.
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Submitted 1 March, 2022; v1 submitted 20 May, 2021;
originally announced May 2021.
