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An electrically controlled single molecule spin switch
Authors:
Wantong Huang,
Kwan Ho Au-Yeung,
Paul Greule,
Máté Stark,
Christoph Sürgers,
Wolfgang Wernsdorfer,
Roberto Robles,
Nicolas Lorente,
Philip Willke
Abstract:
Precise control of spin states and spin-spin interactions in atomic-scale magnetic structures is crucial for spin-based quantum technologies. A promising architecture is molecular spin systems, which offer chemical tunability and scalability for larger structures. An essential component, in addition to the qubits themselves, is switchable qubit-qubit interactions that can be individually addressed…
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Precise control of spin states and spin-spin interactions in atomic-scale magnetic structures is crucial for spin-based quantum technologies. A promising architecture is molecular spin systems, which offer chemical tunability and scalability for larger structures. An essential component, in addition to the qubits themselves, is switchable qubit-qubit interactions that can be individually addressed. In this study, we present an electrically controlled single-molecule spin switch based on a bistable complex adsorbed on an insulating magnesium oxide film. The complex, which consists of an Fe adatom coupled to an iron phthalocyanine (FePc) molecule, can be reversibly switched between two stable states using voltage pulses locally via the tip of a scanning tunnelling microscope (STM). Inelastic electron tunnelling spectroscopy (IETS) measurements and density functional theory (DFT) calculations reveal a distinct change between a paramagnetic and a non-magnetic spin configuration. Lastly, we demonstrate the functionality of this molecular spin switch by using it to modify the electron spin resonance (ESR) frequency of a nearby target FePc spin within a spin-spin coupled structure. Thus, we showcase how individual molecular machines can be utilized to create scalable and tunable quantum devices.
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Submitted 26 March, 2025;
originally announced March 2025.
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Probing Magnetism in Self-Assembled Organometallic Complexes using Kondo Spectroscopy
Authors:
Wantong Huang,
Paul Greule,
Máté Stark,
Joris van Slageren,
Christoph Sürgers,
Wolfgang Wernsdorfer,
Giorgio Sangiovanni,
Christoph Wolf,
Philip Willke
Abstract:
Control of individual spins at the atomic level holds great promise for miniaturized spintronics, quantum sensing, and quantum information processing. Both single atomic and molecular spin centers are prime candidates for these applications and are often individually addressed and manipulated using scanning tunneling microscopy (STM). In this work, we present a hybrid approach and demonstrate a ro…
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Control of individual spins at the atomic level holds great promise for miniaturized spintronics, quantum sensing, and quantum information processing. Both single atomic and molecular spin centers are prime candidates for these applications and are often individually addressed and manipulated using scanning tunneling microscopy (STM). In this work, we present a hybrid approach and demonstrate a robust method for self-assembly of magnetic organometallic complexes consisting of individual iron (Fe) atoms and molecules on a silver substrate using STM. We employ two types of molecules, bis(dibenzoylmethane) copper(II) [Cu(dbm)2] and iron phthalocyanine (FePc). We show that in both cases the Fe atoms preferentially attach underneath the benzene ring ligand of the molecules, effectively forming an organometallic half-sandwich arene complex, Fe(C6H6), that is akin to the properties of metallocenes. In both situations, a molecule can be combined with up to two Fe atoms. In addition, we observe a change in the magnetic properties of the attached Fe atoms in scanning tunneling spectroscopy, revealing a distinct Kondo signature at the Fe sites. We explain the latter using density functional theory calculations, and find that the bond formation between the Fe 3d-orbitals and the benzene π-molecular orbitals creates a favorable situation for Kondo screening of the d_xz- and d_yz-like orbitals. Thus, this work establishes a reliable design principle for forming hybrid organometallic complexes and simultaneous tuning of their atomic spin states.
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Submitted 6 January, 2025;
originally announced January 2025.
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Quantum Spin-Engineering in On-Surface Molecular Ferrimagnets
Authors:
Wantong Huang,
Máté Stark,
Paul Greule,
Kwan Ho Au-Yeung,
Daria Sostina,
José Reina Gálvez,
Christoph Sürgers,
Wolfgang Wernsdorfer,
Christoph Wolf,
Philip Willke
Abstract:
The design and control of atomic-scale spin structures constitute major challenges for spin-based quantum technology platforms, including quantum dots, color centers, and molecular spins. Here, we showcase a strategy for designing the quantum properties of molecular spin qubits by combining tip-assisted on-surface assembly with electron spin resonance scanning tunneling microscopy (ESR-STM): We fa…
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The design and control of atomic-scale spin structures constitute major challenges for spin-based quantum technology platforms, including quantum dots, color centers, and molecular spins. Here, we showcase a strategy for designing the quantum properties of molecular spin qubits by combining tip-assisted on-surface assembly with electron spin resonance scanning tunneling microscopy (ESR-STM): We fabricate magnetic dimer complexes that consist of an iron phthalocyanine (FePc) molecule and an organometallic half-sandwich complex formed by the FePc ligand and an attached iron atom, Fe(C6H6). The total complex forms a mixed-spin (1/2,1) quantum ferrimagnet with a well-separated correlated ground state doublet, which we utilize for coherent control. As a result of the correlation, the quantum ferrimagnet shows an improved spin lifetime (>1.5 $μ$s) as it is partially protected against inelastic electron scattering. Lastly, the ferrimagnet units also enable intermolecular coupling, that can be used to realize both ferromagnetic or antiferromagnetic structures. Thus, quantum ferrimagnets provide a versatile platform to improve coherent control in general and to study complex magnetic interactions.
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Submitted 24 October, 2024;
originally announced October 2024.
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Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas
Authors:
David Weißhaupt,
Christoph Sürgers,
Dominik Bloos,
Hannes Simon Funk,
Michael Oehme,
Gerda Fischer,
Markus Andreas Schubert,
Christian Wenger,
Joris van Slageren,
Inga Anita Fischer,
Jörg Schulze
Abstract:
Ge two-dimensional hole gases in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promis…
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Ge two-dimensional hole gases in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge two-dimensional hole gas (2DHG) can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG - a prerequisite for the realization of spintronic devices - has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm. We observe a magnetoresistance signal for temperatures below 13 K possibly arising from successful spin injection. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG.
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Submitted 14 August, 2024;
originally announced August 2024.
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Anomalous Nernst effect in the noncollinear antiferromagnet Mn$_5$Si$_3$
Authors:
Christoph Sürgers,
Gerda Fischer,
Warlley H. Campos,
Anna Birk Hellenes,
Libor Šmejkal,
Jairo Sinova,
Michael Merz,
Thomas Wolf,
Wolfgang Wernsdorfer
Abstract:
Investigating the off-diagonal components of the conductivity and thermoelectric tensor of materials hosting complex antiferromagnetic structures has become a viable method to reveal the effects of topology and chirality on the electronic transport in these systems. In this respect, Mn$_5$Si$_3$ is an interesting metallic compound that exhibits several antiferromagnetic phases below 100 K with dif…
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Investigating the off-diagonal components of the conductivity and thermoelectric tensor of materials hosting complex antiferromagnetic structures has become a viable method to reveal the effects of topology and chirality on the electronic transport in these systems. In this respect, Mn$_5$Si$_3$ is an interesting metallic compound that exhibits several antiferromagnetic phases below 100 K with different collinear and noncollinear arrangements of Mn magnetic moments. Previous investigations have shown that the transitions between the various phases give rise to large changes of the anomalous Hall effect. Here, we report measurements of the anomalous Nernst effect of Mn$_5$Si$_3$ single crystals. Below 25 K we observe a sign change of the zero-field Nernst signal with a concomitant decrease of the Hall signal and a gradual reduction of the remanent magnetization which we attribute to a subtle rearrangement of the magnetic moment configuration at low temperatures.
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Submitted 6 May, 2024;
originally announced May 2024.
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Optimization of reactively sputtered Mn3GaN films based on resistivity measurements
Authors:
Christoph Sürgers,
Gerda Fischer,
Sihao Deng,
Dongmei Hu,
Cong Wang
Abstract:
Mn-based nitrides with antiperovskite structures have several properties that can be utilised for antiferromagnetic spintronics. Their magnetic properties depend on the structural quality, composition and doping of the cubic antiperovskite structure. Such nitride thin films are usually produced by reactive physical vapour deposition, where the deposition rate of N can only be controlled by the N2…
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Mn-based nitrides with antiperovskite structures have several properties that can be utilised for antiferromagnetic spintronics. Their magnetic properties depend on the structural quality, composition and doping of the cubic antiperovskite structure. Such nitride thin films are usually produced by reactive physical vapour deposition, where the deposition rate of N can only be controlled by the N2 gas flow. We show that the tuning of the N content can be optimised using low temperature resistivity measurements, which serve as an indicator of the degree of structural disorder. Several Mn3GaNx films were prepared by reactive magnetron sputtering under different N2 gas flows. Under optimised conditions, we obtain films that exhibit a metal-like temperature dependence, a vanishing logarithmic increase in resistivity towards zero, the highest resistivity ratio and a lattice contraction of 0.4 % along the growth direction when heated above that of the Néel temperature in agreement with the bulk samples.
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Submitted 2 May, 2024;
originally announced May 2024.
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Microwave Control of the Tin-Vacancy Spin Qubit in Diamond with a Superconducting Waveguide
Authors:
Ioannis Karapatzakis,
Jeremias Resch,
Marcel Schrodin,
Philipp Fuchs,
Michael Kieschnick,
Julia Heupel,
Luis Kussi,
Christoph Sürgers,
Cyril Popov,
Jan Meijer,
Christoph Becher,
Wolfgang Wernsdorfer,
David Hunger
Abstract:
Group-IV color centers in diamond are promising candidates for quantum networks due to their dominant zero-phonon line and symmetry-protected optical transitions that connect to coherent spin levels. The negatively charged tin-vacancy (SnV) center possesses long electron spin lifetimes due to its large spin-orbit splitting. However, the magnetic dipole transitions required for microwave spin contr…
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Group-IV color centers in diamond are promising candidates for quantum networks due to their dominant zero-phonon line and symmetry-protected optical transitions that connect to coherent spin levels. The negatively charged tin-vacancy (SnV) center possesses long electron spin lifetimes due to its large spin-orbit splitting. However, the magnetic dipole transitions required for microwave spin control are suppressed, and strain is necessary to enable these transitions. Recent work has shown spin control of strained emitters using microwave lines that suffer from Ohmic losses, restricting coherence through heating. We utilize a superconducting coplanar waveguide to measure SnV centers subjected to strain, observing substantial improvement. A detailed analysis of the SnV center electron spin Hamiltonian based on the angle-dependent splitting of the ground and excited states is performed. We demonstrate coherent spin manipulation and obtain a Hahn echo coherence time of up to $T_2 = 430\,μ$s. With dynamical decoupling, we can prolong coherence to $T_2 = 10\,$ms, about six-fold improved compared to earlier works. We also observe a nearby coupling $^{13}\mathrm{C}$ spin which may serve as a quantum memory. This substantiates the potential of SnV centers in diamond and demonstrates the benefit of superconducting microwave structures.
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Submitted 1 March, 2024;
originally announced March 2024.
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Nano-assembled open quantum dot nanotube devices
Authors:
Tim Althuon,
Tino Cubaynes,
Aljoscha Auer,
Christoph Sürgers,
Wolfgang Wernsdorfer
Abstract:
A pristine suspended carbon nanotube is a near ideal environment to host long-lived quantum states. For this reason, they have been used as the core element of qubits and to explore numerous condensed matter physics phenomena. One of the most advanced technique to realize complex carbon nanotube based quantum circuits relies on a mechanical integration of the nanotube into the circuit. Despite the…
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A pristine suspended carbon nanotube is a near ideal environment to host long-lived quantum states. For this reason, they have been used as the core element of qubits and to explore numerous condensed matter physics phenomena. One of the most advanced technique to realize complex carbon nanotube based quantum circuits relies on a mechanical integration of the nanotube into the circuit. Despite the high-quality and complexity of the fabricated circuits, the range of possible experiments was limited to the closed quantum dot regime. Here, by engineering a transparent metal-nanotube interface, we developed a technique that overcomes this limitation. We reliably reach the open quantum dot regime as demonstrated by measurements of Fabry-Perot interferences and Kondo physics in multiple devices. A circuit-nanotube alignment precision of +/-200nm is demonstrated. Our technique allows to envision experiments requiring the combination of complex circuits and strongly coupled carbon nanotubes such as the realization of carbon nanotube superconducting qubits or flux-mediated optomechanics experiments.
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Submitted 8 January, 2024;
originally announced January 2024.
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Phase transitions associated with magnetic-field induced topological orbital momenta in a non-collinear antiferromagnet
Authors:
Sihao Deng,
Olena Gomonay,
Jie Chen,
Gerda Fischer,
Lunhua He,
Cong Wang,
Qingzhen Huang,
Feiran Shen,
Zhijian Tan,
Rui Zhou,
Ze Hu,
Libor Šmejkal,
Jairo Sinova,
Wolfgang Wernsdorfer,
Christoph Sürgers
Abstract:
Resistivity measurements are widely exploited to uncover electronic excitations and phase transitions in metallic solids. While single crystals are preferably studied to explore crystalline anisotropies, these usually cancel out in polycrystalline materials. Here we show that in polycrystalline Mn3Zn0.5Ge0.5N with non-collinear antiferromagnetic order, changes in the diagonal and, rather unexpecte…
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Resistivity measurements are widely exploited to uncover electronic excitations and phase transitions in metallic solids. While single crystals are preferably studied to explore crystalline anisotropies, these usually cancel out in polycrystalline materials. Here we show that in polycrystalline Mn3Zn0.5Ge0.5N with non-collinear antiferromagnetic order, changes in the diagonal and, rather unexpected, off-diagonal components of the resistivity tensor occur at low temperatures indicating subtle transitions between magnetic phases of different symmetry. This is supported by neutron scattering and explained within a phenomenological model which suggests that the phase transitions in magnetic field are associated with field induced topological orbital momenta. The fact that we observe transitions between spin phases in a polycrystal, where effects of crystalline anisotropy are cancelled suggests that they are only controlled by exchange interactions. The observation of an off-diagonal resistivity extends the possibilities for realising antiferromagnetic spintronics with polycrystalline materials.
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Submitted 27 June, 2023;
originally announced June 2023.
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Anomalous Nernst effect in ferromagnetic Mn$_5$Ge$_3$C$_x$ thin films on insulating sapphire
Authors:
R. Kraft,
S. Srichandan,
G. Fischer,
C. Sürgers
Abstract:
Investigating the thermoelectric properties of ferromagnets is important for the development of future microelectronic devices for efficient energy conversion purposes. Ferromagnetic Mn$_5$Ge$_3$C$_x$ thin films with a Curie temperature up to $T_{\rm C}$ = 450 K well above room temperature are potential candidates for spintronic applications by integration into CMOS heterostructures. In this work,…
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Investigating the thermoelectric properties of ferromagnets is important for the development of future microelectronic devices for efficient energy conversion purposes. Ferromagnetic Mn$_5$Ge$_3$C$_x$ thin films with a Curie temperature up to $T_{\rm C}$ = 450 K well above room temperature are potential candidates for spintronic applications by integration into CMOS heterostructures. In this work, the thermoelectric power, in particular, the anomalous Nernst effect (ANE) has been investigated experimentally for magnetron sputtered thin films on sapphire (11-20) substrates. The ANE gradually increases with increasing carbon content x up to a maximum value obtained for x=0.8 in line with earlier investigations of the magnetization and anomalous Hall effect. The ANE is strongly enhanced by a factor three compared to the parent Mn$_5$Ge$_3$ compound. However, for x=0.8 we observe a clear deviation of the calculated ANE from the measured values.
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Submitted 19 May, 2020;
originally announced May 2020.
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Onset of phase diffusion in high kinetic inductance granular aluminum micro-SQUIDs
Authors:
Felix Friedrich,
Patrick Winkel,
Kiril Borisov,
Hannes Seeger,
Christoph Sürgers,
Ioan M. Pop,
Wolfgang Wernsdorfer
Abstract:
Superconducting granular aluminum is attracting increasing interest due to its high kinetic inductance and low dissipation, favoring its use in kinetic inductance particle detectors, superconducting resonators or quantum bits. We perform switching current measurements on DC-SQUIDs, obtained by introducing two identical geometric constrictions in granular aluminum rings of various normal-state resi…
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Superconducting granular aluminum is attracting increasing interest due to its high kinetic inductance and low dissipation, favoring its use in kinetic inductance particle detectors, superconducting resonators or quantum bits. We perform switching current measurements on DC-SQUIDs, obtained by introducing two identical geometric constrictions in granular aluminum rings of various normal-state resistivities in the range from $ρ_\mathrm{n} = 250\,μΩ\mathrm{cm}$ to $5550\,μΩ\mathrm{cm}$. The relative high kinetic inductance of the SQUID loop, in the range of tens of nH, leads to a suppression of the modulation in the measured switching current versus magnetic flux, accompanied by a distortion towards a triangular shape. We observe a change in the temperature dependence of the switching current histograms with increasing normal-state film resistivity. This behavior suggests the onset of a diffusive motion of the superconducting phase across the constrictions in the two-dimensional washboard potential of the SQUIDs, which could be caused by a change of the local electromagnetic environment of films with increasing normal-state resistivities.
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Submitted 29 August, 2019;
originally announced August 2019.
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Creation of equal-spin triplet superconductivity at the Al/EuS interface
Authors:
Simon Diesch,
Peter Machon,
Michael Wolz,
Christoph Sürgers,
Detlef Beckmann,
Wolfgang Belzig,
Elke Scheer
Abstract:
In conventional superconductors, electrons of opposite spins are bound into Cooper pairs. However, when the superconductor is in contact with a non-uniformly ordered ferromagnet, an exotic type of superconductivity can appear at the interface, with electrons bound into three possible spin-triplet states. Triplet pairs with equal spin play a vital role in low-dissipation spintronics. Despite the ob…
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In conventional superconductors, electrons of opposite spins are bound into Cooper pairs. However, when the superconductor is in contact with a non-uniformly ordered ferromagnet, an exotic type of superconductivity can appear at the interface, with electrons bound into three possible spin-triplet states. Triplet pairs with equal spin play a vital role in low-dissipation spintronics. Despite the observation of supercurrents through ferromagnets, spectroscopic evidence for the existence of equal-spin triplet pairs is still missing. Here we show a theoretical model that reveals a characteristic gap structure in the quasiparticle density of states which provides a unique signature for the presence of equal-spin triplet pairs. By scanning tunnelling spectroscopy we measure the local density of states to reveal the spin configuration of triplet pairs. We demonstrate that the Al/EuS interface causes strong and tunable spin-mixing by virtue of its spin-dependent transmission.
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Submitted 21 November, 2018;
originally announced November 2018.
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Interface-induced enhancement of the anomalous Nernst effect in ferromagnetic Mn$_5$Ge$_3$C$_{0.8}$ films
Authors:
S. Srichandan,
S. Deng,
I. A. Fischer,
C. Sürgers
Abstract:
The anomalous Nernst effect of thin bilayers comprising a thin normal metal film and a ferromagnetic Mn$_5$Ge$_3$C$_{0.8}$ film has been investigated. Epitaxial c-axis grown Mn$_5$Ge$_3$C$_{0.8}$ films have been obtained by e-beam evaporation as well as by magnetron sputtering on Ge(111) substrates. The size of the anomalous Nernst coefficient is independent of the growth method. Pt, Ta, and Pt/Cu…
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The anomalous Nernst effect of thin bilayers comprising a thin normal metal film and a ferromagnetic Mn$_5$Ge$_3$C$_{0.8}$ film has been investigated. Epitaxial c-axis grown Mn$_5$Ge$_3$C$_{0.8}$ films have been obtained by e-beam evaporation as well as by magnetron sputtering on Ge(111) substrates. The size of the anomalous Nernst coefficient is independent of the growth method. Pt, Ta, and Pt/Cu bilayers have been used as voltage leads on top of the ferromagnetic film. We show that the interface between the normal metal electrode and the ferromagnetic film contributes significantly to the anomalous Nernst voltage which is suprisingly independent of the choice of the metal. The interface-induced enhancement of the anomalous Nernst effect is verified for samples with varying Mn content or undergoing an additional annealing step. The results suggest that the interface quality has a strong impact on the size of the anomalous Nernst effect.
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Submitted 19 April, 2019; v1 submitted 14 November, 2018;
originally announced November 2018.
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Thermoelectric effects in superconductor-ferromagnet tunnel junctions on europium sulfide
Authors:
S. Kolenda,
C. Sürgers,
G. Fischer,
D. Beckmann
Abstract:
We report on large thermoelectric effects in superconductor-ferromagnet tunnel junctions in proximity contact with the ferromagnetic insulator europium sulfide. The combination of a spin-splitting field and spin-polarized tunnel conductance in these systems breaks the electron-hole symmetry and leads to spin-dependent thermoelectric currents. We show that the exchange splitting induced by the euro…
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We report on large thermoelectric effects in superconductor-ferromagnet tunnel junctions in proximity contact with the ferromagnetic insulator europium sulfide. The combination of a spin-splitting field and spin-polarized tunnel conductance in these systems breaks the electron-hole symmetry and leads to spin-dependent thermoelectric currents. We show that the exchange splitting induced by the europium sulfide boosts the thermoelectric effect in small applied fields and can therefore eliminate the need to apply large magnetic fields, which might otherwise impede applications in thermometry or cooling.
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Submitted 24 April, 2017;
originally announced April 2017.
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15 cm$^{-1}$ to 12000 cm$^{-1}$ spectral coverage without changing optics: diamond beam splitter adaptation of an FTIR spectrometer
Authors:
Dmitry Strelnikov,
Bastian Kern,
Christoph Sürgers,
Manfred Kappes
Abstract:
In order to facilitate IR absorption measurements of mass-selected ions isolated in cryogenic matrices, we have upgraded an ion beam deposition apparatus encompassing a Bruker IFS66v/S FTIR spectrometer. A synthetic diamond beam splitter without compensator plate and UHV diamond viewports were installed. We have also modified the IR detector chamber to allow measurements with 5 different detectors…
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In order to facilitate IR absorption measurements of mass-selected ions isolated in cryogenic matrices, we have upgraded an ion beam deposition apparatus encompassing a Bruker IFS66v/S FTIR spectrometer. A synthetic diamond beam splitter without compensator plate and UHV diamond viewports were installed. We have also modified the IR detector chamber to allow measurements with 5 different detectors. As a result we can now obtain FT absorption spectra from 12000 cm$^{-1}$ to 15 cm$^{-1}$ with the same sample held under ultrahigh vacuum conditions, simply by switching between appropriate IR detectors. We demonstrate performance of the upgraded FTIR spectrometer by presenting measurements of matrix isolated fullerene ions and an adhesive tape.
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Submitted 21 October, 2016;
originally announced October 2016.
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Signature of f-electron conductance in $α$-Ce single-atom contacts
Authors:
Sebastian Kuntz,
Oliver Berg,
Christoph Sürgers,
Hilbert v. Löhneysen
Abstract:
Cerium is a fascinating element exhibiting, with its different phases, long-range magnetic order and superconductivity in bulk form. The coupling of the 4f electron to sd conduction electrons and to the lattice is responsible for unique structural and electronic properties like the isostructural first-order solid-solid transition from the cubic $γ$ phase to the cubic $α$ phase, which is accompanie…
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Cerium is a fascinating element exhibiting, with its different phases, long-range magnetic order and superconductivity in bulk form. The coupling of the 4f electron to sd conduction electrons and to the lattice is responsible for unique structural and electronic properties like the isostructural first-order solid-solid transition from the cubic $γ$ phase to the cubic $α$ phase, which is accompanied by a huge volume collapse of 14 %. While the $γ- α$ phase transition has been investigated for decades, experiments aiming at disentangling the 4f contribution to the electric conductance of the different phases have not been performed. Here we report on the strongly enhanced conductance of single-atom Ce contacts. By controlling the content of $α$-Ce employing different rates of cooling, we find a strong correlation between the fraction of $α$-Ce and the magnitude of the last conductance plateau before the contact breaks. We attribute the enhanced conductance of $α$-Ce to the additional contribution of the 4f level.
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Submitted 19 October, 2016;
originally announced October 2016.
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Switching of a large anomalous Hall effect between metamagnetic phases of a non-collinear antiferromagnet
Authors:
Christoph Sürgers,
Thomas Wolf,
Peter Adelmann,
Wolfram Kittler,
Gerda Fischer,
Hilbert v. Löhneysen
Abstract:
The anomalous Hall effect (AHE), which in long-range ordered ferromagnets appears as a voltage transverse to the current and usually is proportional to the magnetization, often is believed to be of negligible size in antiferromagnets due to their low uniform magnetization. However, recent experiments and theory have demonstrated that certain antiferromagnets with a non-collinear arrangement of mag…
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The anomalous Hall effect (AHE), which in long-range ordered ferromagnets appears as a voltage transverse to the current and usually is proportional to the magnetization, often is believed to be of negligible size in antiferromagnets due to their low uniform magnetization. However, recent experiments and theory have demonstrated that certain antiferromagnets with a non-collinear arrangement of magnetic moments exhibit a sizeable spontaneous AHE at zero field due to a non-vanishing Berry curvature arising from the quantum mechanical phase of the electron's wave functions. Here we show that antiferromagnetic Mn5Si3 single crystals exibit a large AHE which is strongly anisotropic and shows multiple transitions with sign changes at different magnetic fields due to field-induced rearrangements of the magnetic structure despite only tiny variations of the total magnetization. The presence of multiple non-collinear magnetic phases offers the unique possiblity to explore the details of the AHE and the sensitivity of the Hall effect on the details of the magnetic texture.
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Submitted 16 September, 2016;
originally announced September 2016.
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Magnetostrictive Fe73Ga27 nanocontacts for low field conductance switching
Authors:
U. M. Kannan S. Kuntz O. Berg,
Wolfram Kittler,
Himalay Basumatary,
J. Arout Chelvane,
C. Suergers,
S. Narayana Jammalamadaka
Abstract:
The electrical conductance G of magnetostrictive nanocontacts made from Galfenol Fe73Ga27 can be reproducibly switched between on and off states in a low magnetic field of 20 to 30 mT at 10 K. The switching behavior is in agreement with the magnetic field dependence of the magnetostriction inferred from the magnetization behavior, causing a positive magnetostrictive strain along the magnetic field…
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The electrical conductance G of magnetostrictive nanocontacts made from Galfenol Fe73Ga27 can be reproducibly switched between on and off states in a low magnetic field of 20 to 30 mT at 10 K. The switching behavior is in agreement with the magnetic field dependence of the magnetostriction inferred from the magnetization behavior, causing a positive magnetostrictive strain along the magnetic field. The repeated magneticfield cycling leads to a stable contact geometry and to a robust contact configuration with a very low hysteresis of 1 mT between opening and closing the contact due to a training effect. Nonintegral multiples of the conductance quantum G0 observed for G is greater than G0 are attributed to electron backscattering at defect sites in the electrodes near the contact interface. When the contact is closed either mechanically or by magnetic field, the conductance shows an exponential behavior below G0 due to electron tunneling. This allows to estimate the magnetostriction at 10 K. The results demonstrate that such magnetostrictive devices are suitable for the remote control of the conductance by low magnetic fields in future nanotechnology applications.
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Submitted 6 June, 2016;
originally announced June 2016.
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Anomalous Hall effect in the noncollinear antiferromagnet Mn5Si3
Authors:
C. Sürgers,
W. Kittler,
T. Wolf,
H. v. Loehneysen
Abstract:
Metallic antiferromagnets with noncollinear orientation of magnetic moments provide a playground for investigating spin-dependent transport properties by analysis of the anomalous Hall effect. The intermetallic compound Mn5Si3 is an intinerant antiferromagnet with collinear and noncollinear magnetic structures due to Mn atoms on two inequivalent lattice sites. Here, magnetotransport measurements o…
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Metallic antiferromagnets with noncollinear orientation of magnetic moments provide a playground for investigating spin-dependent transport properties by analysis of the anomalous Hall effect. The intermetallic compound Mn5Si3 is an intinerant antiferromagnet with collinear and noncollinear magnetic structures due to Mn atoms on two inequivalent lattice sites. Here, magnetotransport measurements on polycrystalline thin films and a single crystal are reported. In all samples, an additional contribution to the anomalous Hall effect attributed to the noncollinear arrangment of magnetic moments is observed. Furthermore, an additional magnetic phase between the noncollinear and collinear regimes above a metamagnetic transition is resolved in the single crystal by the anomalous Hall effect.
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Submitted 8 January, 2016;
originally announced January 2016.
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Two-band superconductivity of bulk and surface states in Ag thin films on Nb
Authors:
Tihomir Tomanic,
Michael Schackert,
Wulf Wulfhekel,
Christoph Sürgers,
Hilbert v. Löhneysen
Abstract:
We use epitaxial strain to shift the energy of the two-dimensional Ag(111) surface states of Ag islands on Nb(110) substrates, allowing to spatially tune the bottom of the surface-state band $E_{\rm SS}$ through the Fermi level $E_{\rm F}$. Bulk and surface-state contributions to the Ag(111) local density of states (LDOS) can be separated with scanning tunneling spectroscopy. For thick islands (…
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We use epitaxial strain to shift the energy of the two-dimensional Ag(111) surface states of Ag islands on Nb(110) substrates, allowing to spatially tune the bottom of the surface-state band $E_{\rm SS}$ through the Fermi level $E_{\rm F}$. Bulk and surface-state contributions to the Ag(111) local density of states (LDOS) can be separated with scanning tunneling spectroscopy. For thick islands ($\approx$\, 20 nm), the Ag surface states are decoupled from the Ag bulk states via orthogonality, and the superconductive gap induced by proximity to Nb is due to bulk states only. However, for thin islands (3-4 nm), surface-state electrons develop superconducting correlations as identified by a complete energy gap in the LDOS when $E_{\rm F}$ is smaller than but close to $E_{\rm F}$. The induced superconductivity in this case is of two-band nature and appears to occur when the surface-state wave function reaches down to the Ag/Nb interface.
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Submitted 4 January, 2017; v1 submitted 22 June, 2015;
originally announced June 2015.
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Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
Authors:
Inga Anita Fischer,
Li-Te Chang,
Christoph Sürgers,
Erlend Rolseth,
Sebastian Reiter,
Stefan Stefanov,
Stefano Chiussi,
Jianshi Tang,
Kang L. Wang,
Jörg Schulze
Abstract:
We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5Ge3C0.8/Al2O3/n^{+}-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for complementary metal-oxide-semiconductor compatibility. From three-terminal Hanle-effect measurements, we observe a spin accumulation up to 10 K. The spin lifetime is extrac…
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We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5Ge3C0.8/Al2O3/n^{+}-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for complementary metal-oxide-semiconductor compatibility. From three-terminal Hanle-effect measurements, we observe a spin accumulation up to 10 K. The spin lifetime is extracted to be 38 ps at T = 4K using Lorentzian fitting, and the spin diffusion length is estimated to be 367 nm due to the high diffusion coefficient of the highly doped Ge channel.
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Submitted 5 December, 2014;
originally announced December 2014.
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Spin-polarized quasiparticle transport in exchange-split superconducting aluminum on europium sulfide
Authors:
M. J. Wolf,
C. Sürgers,
G. Fischer,
D. Beckmann
Abstract:
We report on nonlocal spin transport in mesoscopic superconducting aluminum wires in contact with the ferromagnetic insulator europium sulfide. We find spin injection and long-range spin transport in the regime of the exchange splitting induced by europium sulfide. Our results demonstrate that spin transport in superconductors can be manipulated by ferromagnetic insulators, and opens a new path to…
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We report on nonlocal spin transport in mesoscopic superconducting aluminum wires in contact with the ferromagnetic insulator europium sulfide. We find spin injection and long-range spin transport in the regime of the exchange splitting induced by europium sulfide. Our results demonstrate that spin transport in superconductors can be manipulated by ferromagnetic insulators, and opens a new path to control spin currents in superconductors.
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Submitted 1 August, 2014;
originally announced August 2014.
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Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films
Authors:
Christoph Sürgers,
Gerda Fischer,
Patrick Winkel,
Hilbert v. Löhneysen
Abstract:
The electrical resistivity, anisotropic magnetoresistance (AMR), and anomalous Hall effect of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films has been investigated. The data show a behavior characteristic for a ferromagnetic metal, with a linear increase of the anomalous Hall coefficient with Curie temperature. While for ferromagnetic Mn5Si3C0.8 the normal Hall coefficient R0 and the A…
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The electrical resistivity, anisotropic magnetoresistance (AMR), and anomalous Hall effect of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films has been investigated. The data show a behavior characteristic for a ferromagnetic metal, with a linear increase of the anomalous Hall coefficient with Curie temperature. While for ferromagnetic Mn5Si3C0.8 the normal Hall coefficient R0 and the AMR ratio are independent of temperature, these parameters strongly increase with temperature for the germanide films. This difference is attributed to the different hybridization of electronic states in the materials due different lattice parameters and different atomic configurations (Ge vs. Si metalloid). The concomitant sign change of R0 and the AMR ratio with temperature observed for the germanide films is discussed in a two-current model indicating an electron-like minority-spin transport at low temperatures.
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Submitted 5 June, 2014;
originally announced June 2014.
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Temperature-dependent scanning tunneling spectroscopy on the Si(557)-Au surface
Authors:
M. Sauter,
R. Hoffmann,
C. Surgers,
H. v. Lohneysen
Abstract:
Room-temperature and low-temperature (77 K) scanning tunneling spectroscopy (STS) and voltage-dependent scanning tunneling microscopy (STM) data are used to study the local electronic properties of the quasi-one-dimensional Si(557)-Au surface in real space. A gapped local electron density of states near the Gamma-point is observed at different positions of the surface, i.e., at protrusions arising…
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Room-temperature and low-temperature (77 K) scanning tunneling spectroscopy (STS) and voltage-dependent scanning tunneling microscopy (STM) data are used to study the local electronic properties of the quasi-one-dimensional Si(557)-Au surface in real space. A gapped local electron density of states near the Gamma-point is observed at different positions of the surface, i.e., at protrusions arising from Si adatoms and step-edge atoms. Within the gap region, two distinct peaks are observed on the chain of localized protrusions attributed to Si adatoms. The energy gap widens on both types of protrusions after cooling from room temperature to T = 77 K. The temperature dependence of the local electronic properties can therefore not be attributed to a Peierls transition occurring for the step edge only. We suggest that more attention should be paid to finite-size effects on the one-dimensional segments.
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Submitted 18 February, 2014;
originally announced February 2014.
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Experimental verification of contact-size estimates in point-contact spectroscopy on superconductor/ferromagnet heterocontacts
Authors:
J. Gramich,
P. Brenner,
C. Sürgers,
H. v. Löhneysen,
G. Goll
Abstract:
Nanostructured superconductor/ferromagnet heterocontacts are studied in the different transport regimes of point-contact spectroscopy. Direct measurements of the nanocontact size by scanning electron microscopy allow a comparison with theoretical models for contact-size estimates of heterocontacts. Our experimental data give evidence that size estimates yield reasonable values for the point-contac…
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Nanostructured superconductor/ferromagnet heterocontacts are studied in the different transport regimes of point-contact spectroscopy. Direct measurements of the nanocontact size by scanning electron microscopy allow a comparison with theoretical models for contact-size estimates of heterocontacts. Our experimental data give evidence that size estimates yield reasonable values for the point-contact diameter $d$ as long as the samples are carefully characterized with respect to the local electronic parameters.
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Submitted 13 September, 2012;
originally announced September 2012.
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Nonlocal vs local vortex dynamics in the transversal flux transformer effect
Authors:
Florian Otto,
Ante Bilusic,
Dinko Babic,
Denis Yu. Vodolazov,
Christoph Suergers,
Christoph Strunk
Abstract:
In this follow-up to our recent Letter [F. Otto et al., Phys. Rev. Lett. 104, 027005 (2010)], we present a more detailed account of the superconducting transversal flux transformer effect (TFTE) in amorphous (a-)NbGe nanostructures in the regime of strong nonequilibrium in local vortex motion. Emphasis is put on the relation between the TFTE and local vortex dynamics, as the former turns out to be…
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In this follow-up to our recent Letter [F. Otto et al., Phys. Rev. Lett. 104, 027005 (2010)], we present a more detailed account of the superconducting transversal flux transformer effect (TFTE) in amorphous (a-)NbGe nanostructures in the regime of strong nonequilibrium in local vortex motion. Emphasis is put on the relation between the TFTE and local vortex dynamics, as the former turns out to be a reliable tool for determining the microscopic mechanisms behind the latter. By this method, a progression from electron heating at low temperatures T to the Larkin-Ovchinnikov effect close to the transition temperature Tc is traced over a range 0.26 < T/Tc < 0.95. This is represented by a number of relevant parameters such as the vortex transport entropy related to the Nernst-like effect at low T, and a nonequilibrium magnetization enhancement close to Tc. At intermediate T, the Larkin-Ovchinnikov effect is at high currents modified by electron heating, which is clearly observed only in the TFTE.
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Submitted 24 March, 2010;
originally announced March 2010.
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Reversal of Nonlocal Vortex Motion in the Regime of Strong Nonequilibrium
Authors:
Florian Otto,
Ante Bilusic,
Dinko Babic,
Denis Yu. Vodolazov,
Christoph Suergers,
Christoph Strunk
Abstract:
We investigate nonlocal vortex motion in weakly pinning a-NbGe nanostructures, which is driven by a transport current I and remotely detected as a nonlocal voltage Vnl. At high I, the measured Vnl exhibits dramatic sign reversals that at low and high temperatures T occur for opposite polarities of I. The sign of Vnl becomes independent of that of the drive current at large abs(I). These unusual…
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We investigate nonlocal vortex motion in weakly pinning a-NbGe nanostructures, which is driven by a transport current I and remotely detected as a nonlocal voltage Vnl. At high I, the measured Vnl exhibits dramatic sign reversals that at low and high temperatures T occur for opposite polarities of I. The sign of Vnl becomes independent of that of the drive current at large abs(I). These unusual effects can be nearly quantitatively explained by a novel enhancement of magnetization, arising from a nonequilibrium distribution of quasiparticles at high T, and a Nernst-like effect resulting from local electron heating at low T.
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Submitted 26 August, 2009;
originally announced August 2009.
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Size Dependence of Current Spin Polarization Through Superconductor/Ferromagnet Nanocontacts
Authors:
M. Stokmaier,
G. Goll,
D. Weissenberger,
C. Sürgers,
H. v. Löhneysen
Abstract:
The spin polarization P of the transport current through the interface between superconducting Al and ferromagnetic Fe is determined by means of Andreev reflection at nanostructured point contacts. We observe a systematic decrease of P with decreasing contact resistance. Our data provide evidence for the reduction of P by spin-orbit scattering and thus establish a link between density-of-states…
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The spin polarization P of the transport current through the interface between superconducting Al and ferromagnetic Fe is determined by means of Andreev reflection at nanostructured point contacts. We observe a systematic decrease of P with decreasing contact resistance. Our data provide evidence for the reduction of P by spin-orbit scattering and thus establish a link between density-of-states and transport spin polarizations.
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Submitted 9 September, 2008;
originally announced September 2008.
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Nonlocal vortex motion in mesoscopic amorphous Nb0.7Ge0.3 structures
Authors:
A. Helzel,
I. Kokanovic,
D. Babic,
L. V. Litvin,
F. Rohlfing,
F. Otto,
C. Surgers,
C. Strunk
Abstract:
We study nonlocal vortex transport in mesoscopic amorphous Nb0.7Ge0.3 samples. A dc current I is passed through a wire connected via a perpendicular channel, of a length L= 2-5 um, with a pair of voltage probes where a nonlocal response Vnl ~ I is measured. The maximum of Rnl=Vnl/I for a given temperature occurs at an L-independent magnetic field and is proportional to 1/L. The results are inter…
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We study nonlocal vortex transport in mesoscopic amorphous Nb0.7Ge0.3 samples. A dc current I is passed through a wire connected via a perpendicular channel, of a length L= 2-5 um, with a pair of voltage probes where a nonlocal response Vnl ~ I is measured. The maximum of Rnl=Vnl/I for a given temperature occurs at an L-independent magnetic field and is proportional to 1/L. The results are interpreted in terms of the dissipative vortex motion along the channel driven by a remote current, and can be understood in terms of a simple model.
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Submitted 16 June, 2006;
originally announced June 2006.
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Strongly nonequilibrium flux flow in the presence of perforating submicron holes
Authors:
D. Babic,
J. Bentner,
C. Suergers,
C. Strunk
Abstract:
We report on the effects of perforating submicron holes on the vortex dynamics of amorphous Nb0.7Ge0.3 microbridges in the strongly nonequilibrium mixed state, when vortex properties change substantially. In contrast to the weak nonequilibrium - when the presence of holes may result in either an increase (close to Tc) or a decrease (well below Tc) of the dissipation, in the strong nonequilibrium…
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We report on the effects of perforating submicron holes on the vortex dynamics of amorphous Nb0.7Ge0.3 microbridges in the strongly nonequilibrium mixed state, when vortex properties change substantially. In contrast to the weak nonequilibrium - when the presence of holes may result in either an increase (close to Tc) or a decrease (well below Tc) of the dissipation, in the strong nonequilibrium an enhanced dissipation is observed irrespectively of the bath temperature. Close to Tc this enhancement is similar to that in the weak nonequilibrium, but corresponds to vortices shrunk due to the Larkin-Ovchinnikov mechanism. At low temperatures the enhancement is a consequence of a weakening of the flux pinning by the holes in a regime where electron heating dominates the superconducting properties.
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Submitted 1 June, 2005;
originally announced June 2005.
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Electrical Spin Injection in Multi-Wall carbon NanoTubes with transparent ferromagnetic contacts
Authors:
S. Sahoo,
T. Kontos,
C. Schönenberger,
C. Sürgers
Abstract:
We report on electrical spin injection measurements on MWNTs . We use a ferromagnetic alloy Pd$_{1-x}$Ni$_{x}$ with x $\approx$ 0.7 which allows to obtain devices with resistances as low as 5.6 $kΩ$ at 300 $K$. The yield of device resistances below 100 $kΩ$, at 300 $K$, is around 50%. We measure at 2 $K$ a hysteretic magneto-resistance due to the magnetization reversal of the ferromagnetic leads…
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We report on electrical spin injection measurements on MWNTs . We use a ferromagnetic alloy Pd$_{1-x}$Ni$_{x}$ with x $\approx$ 0.7 which allows to obtain devices with resistances as low as 5.6 $kΩ$ at 300 $K$. The yield of device resistances below 100 $kΩ$, at 300 $K$, is around 50%. We measure at 2 $K$ a hysteretic magneto-resistance due to the magnetization reversal of the ferromagnetic leads. The relative difference between the resistance in the antiparallel (AP) orientation and the parallel (P) orientation is about 2%.
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Submitted 16 December, 2004; v1 submitted 24 November, 2004;
originally announced November 2004.
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Vortex dynamics in the presence of a line of submicron holes along a superconducting microbridge
Authors:
J. Bentner,
D. Babic,
C. Suergers,
C. Strunk
Abstract:
We measured and compared the electric field vs current density characteristics in the vortex state of two amorphous Nb0.7Ge0.3 microbridges, with and without a line of submicron holes patterned along the sample axis. The power dissipation in the perforated sample exhibits a crossover, being reduced at temperatures well below the superconducting transition temperature Tc and unexpectedly enhanced…
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We measured and compared the electric field vs current density characteristics in the vortex state of two amorphous Nb0.7Ge0.3 microbridges, with and without a line of submicron holes patterned along the sample axis. The power dissipation in the perforated sample exhibits a crossover, being reduced at temperatures well below the superconducting transition temperature Tc and unexpectedly enhanced close to Tc. At low temperatures the holes are efficient artificial pinning centres and reduce the average vortex velocity. We argue that the dissipation enhancement close to Tc is a consequence of a combination of the weakened pinning by the holes and an inhomogeneous driving-current distribution in their vicinity, which results in an increased average vortex velocity as well as in a channeling of the vortex motion through the holes.
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Submitted 13 April, 2004;
originally announced April 2004.
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Flux Flow Instabilities in Microstructured Amorphous Nb0.7Ge0.3 Thin Films
Authors:
D. Babic,
J. Bentner,
C. Suergers,
C. Strunk
Abstract:
We report measurements of the electric field vs. current density [E(J] characteristics in the mixed state of amorphous Nb0.7Ge0.3 microbridges. Close to the transition temperature Tc the Larkin-Ovchinnikov theory of nonlinear flux flow and the related instability describes the data quantitatively up to ~ 70% of the upper critical magnetic field Bc2 and over a wide electric field range. At lower…
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We report measurements of the electric field vs. current density [E(J] characteristics in the mixed state of amorphous Nb0.7Ge0.3 microbridges. Close to the transition temperature Tc the Larkin-Ovchinnikov theory of nonlinear flux flow and the related instability describes the data quantitatively up to ~ 70% of the upper critical magnetic field Bc2 and over a wide electric field range. At lower temperatures the nonlinearities of E(J)can be described by electron heating which reduces Bc2 and leads to a second type of flux flow instability, as shown by a scaling analysis of the high-dissipation data.
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Submitted 18 July, 2003;
originally announced July 2003.
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Determining the current polarization in Al/Co nanostructured point contacts
Authors:
F. Perez-Willard,
J. C. Cuevas,
C. Suergers,
P. Pfundstein,
J. Kopu,
M. Eschrig,
H. v. Loehneysen
Abstract:
We present a study of the Andreev reflections in superconductor/ferromagnet nanostructured point contacts. The experimental data are analyzed in the frame of a model with two spin-dependent transmission coefficients for the majority and minority charge carriers in the ferromagnet. This model consistently describes the whole set of conductance measurements as a function of voltage, temperature, a…
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We present a study of the Andreev reflections in superconductor/ferromagnet nanostructured point contacts. The experimental data are analyzed in the frame of a model with two spin-dependent transmission coefficients for the majority and minority charge carriers in the ferromagnet. This model consistently describes the whole set of conductance measurements as a function of voltage, temperature, and magnetic field. The ensemble of our results shows that the degree of spin polarization of the current can be unambiguously determined using Andreev physics.
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Submitted 10 June, 2003;
originally announced June 2003.
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Vortex Motion Noise in Micrometre-Sized Thin Films of the Amorphous Nb0.7Ge0.3 Weak-Pinning Superconductor
Authors:
D. Babic,
T. Nussbaumer,
C. Strunk,
C. Schoenenberger,
C. Suergers
Abstract:
We report high-resolution measurements of voltage (V) noise in the mixed state of micrometre-sized thin films of amorphous Nb0.7Ge0.3, which is a good representative of weak-pinning superconductors. There is a remarkable difference between the noise below and above the irreversibility field Birr. Below Birr, in the presence of measurable pinning, the noise at small applied currents resembles sho…
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We report high-resolution measurements of voltage (V) noise in the mixed state of micrometre-sized thin films of amorphous Nb0.7Ge0.3, which is a good representative of weak-pinning superconductors. There is a remarkable difference between the noise below and above the irreversibility field Birr. Below Birr, in the presence of measurable pinning, the noise at small applied currents resembles shot noise, and in the regime of flux flow at larger currents decreases with increasing voltage due to a progressive ordering of the vortex motion. At magnetic fields B between Birr and the upper critical field Bc2 flux flow is present already at vanishingly small currents. In this regime the noise scales with (1-B/Bc2)^2 V^2 and has a frequency (f) spectrum of 1/f type. We interpret this noise in terms of the properties of strongly driven depinned vortex systems at high vortex density.
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Submitted 3 June, 2002; v1 submitted 23 November, 2001;
originally announced November 2001.
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Investigation of Single Boron Acceptors at the Cleaved Si:B (111) Surface
Authors:
Maya Schoeck,
Christoph Suergers,
Hilbert v. Loehneysen
Abstract:
The cleaved and (2 x 1) reconstructed (111) surface of p-type Si is investigated by scanning tunneling microscopy (STM). Single B acceptors are identified due to their characteristic voltage-dependent contrast which is explained by a local energetic shift of the electronic density of states caused by the Coulomb potential of the negatively charged acceptor. In addition, detailed analysis of the…
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The cleaved and (2 x 1) reconstructed (111) surface of p-type Si is investigated by scanning tunneling microscopy (STM). Single B acceptors are identified due to their characteristic voltage-dependent contrast which is explained by a local energetic shift of the electronic density of states caused by the Coulomb potential of the negatively charged acceptor. In addition, detailed analysis of the STM images shows that apparently one orbital is missing at the B site at sample voltages of 0.4 - 0.6 V, corresponding to the absence of a localized dangling-bond state. Scanning tunneling spectroscopy confirms a strongly altered density of states at the B atom due to the different electronic structure of B compared to Si.
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Submitted 20 October, 1999;
originally announced October 1999.
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Strongly Enhanced Curie Temperature in Carbon-Doped Mn5Ge3 Films
Authors:
M. Gajdzik,
C. Suergers,
M. Kelemen,
H. v. Loehneysen
Abstract:
The structural and magnetic properties of Mn5Ge3Cx films prepared at elevated substrate temperatures TS are investigated. In particular, films with x >= 0.5 and TS = 680 K exhibit a strongly enhanced Curie temperature TC = 440 K compared to Mn5Ge3 with TC = 304 K. Structural analysis of these films suggests that the carbon is interstitially incorporated into the voids of Mn octahedra of the hexa…
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The structural and magnetic properties of Mn5Ge3Cx films prepared at elevated substrate temperatures TS are investigated. In particular, films with x >= 0.5 and TS = 680 K exhibit a strongly enhanced Curie temperature TC = 440 K compared to Mn5Ge3 with TC = 304 K. Structural analysis of these films suggests that the carbon is interstitially incorporated into the voids of Mn octahedra of the hexagonal Mn5Si3-type structure giving rise to a lattice compression. The enhanced ferromagnetic stability in connection with the lattice compression is interpreted in terms of an Mn-Mn interaction mediated by C based on a change in the electronic structure.
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Submitted 10 November, 1999; v1 submitted 19 May, 1999;
originally announced May 1999.
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Superconducting and Magnetic Properties of Nb/Pd_1-xFe_x/Nb Triple Layers
Authors:
M. Schoeck,
C. Suergers,
H. v. Loehneysen
Abstract:
The superconducting and magnetic properties of Nb/Pd_1-xFe_x/Nb triple layers with constant Nb layer thickness d_Nb=200 A and different interlayer thicknesses are investigated. The thickness dependence of the magnetization and of the superconducting transition temperature shows that for small iron concentration x the Pd_1-xFe_x layer is likely to be in the paramagnetic state for very thin films…
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The superconducting and magnetic properties of Nb/Pd_1-xFe_x/Nb triple layers with constant Nb layer thickness d_Nb=200 A and different interlayer thicknesses are investigated. The thickness dependence of the magnetization and of the superconducting transition temperature shows that for small iron concentration x the Pd_1-xFe_x layer is likely to be in the paramagnetic state for very thin films whereas ferromagnetic order is established for x>=0.13. The parallel critical field B_c2II(T) exhibits a crossover from two-dimensional (2D) behavior where the Nb films are coupled across the interlayer, towards a 2D behavior of coupled Nb films with increasing d_PdFe or x. This 2D-2D crossover allows a determination of the penetration depth xi_F of Cooper pairs into the Pd_1-xFe_x layer as a function of x. For samples with a ferromagnetic interlayer xi_ is found to be independent of x.
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Submitted 16 December, 1998;
originally announced December 1998.
