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Light / heavy hole switching with correlated characterization on a single quantum dot : Probing the light hole / heavy hole switching with correlated magneto-optical spectroscopy and chemical analysis on a single quantum dot
Authors:
Alberto Artioli,
Pamela Rueda-Fonseca,
Kimon Moratis,
Jean-François Motte,
Fabrice Donatini,
Martien I Den Hertog,
Eric Robin,
Régis André,
Yann-Michel Niquet,
Edith Bellet-Amalric,
Joel Cibert,
David Ferrand
Abstract:
A whole series of complementary studies have been performed on the same, single nanowire containing a quantum dot: cathodoluminescence spectroscopy and imaging, micro-photoluminescence spectroscopy under magnetic field and as a function of temperature, and energy-dispersive X-ray spectrometry and imaging. The ZnTe nanowire was deposited on a Si 3 N 4 membrane with Ti/Al patterns. The complete set…
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A whole series of complementary studies have been performed on the same, single nanowire containing a quantum dot: cathodoluminescence spectroscopy and imaging, micro-photoluminescence spectroscopy under magnetic field and as a function of temperature, and energy-dispersive X-ray spectrometry and imaging. The ZnTe nanowire was deposited on a Si 3 N 4 membrane with Ti/Al patterns. The complete set of data shows that the CdTe quantum dot features the heavy-hole state as a ground state, although the compressive mismatch strain promotes a light-hole ground state as soon as the aspect ratio is larger than unity (elongated dot). A numerical calculation of the whole structure shows that the transition from the heavy-hole to the light-hole configuration is pushed toward values of the aspect ratio much larger than unity by the presence of a (Zn,Mg)Te shell, and that the effect is further enhanced by a small valence band offset between the semiconductors in the dot and around it.
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Submitted 15 January, 2019;
originally announced January 2019.
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Light-hole Exciton in Nanowire Quantum Dot
Authors:
Mathieu Jeannin,
Alberto Artioli,
Pamela Rueda-Fonseca,
Edith Bellet-Amalric,
Kuntheak Kheng,
Régis André,
Serge Tatarenko,
Joël Cibert,
David Ferrand,
Gilles Nogues
Abstract:
Quantum dots inserted inside semiconductor nanowires are extremely promising candidates as building blocks for solid-state based quantum computation and communication. They provide very high crystalline and optical properties and offer a convenient geometry for electrical contacting. Having a complete determination and full control of their emission properties is one of the key goals of nanoscienc…
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Quantum dots inserted inside semiconductor nanowires are extremely promising candidates as building blocks for solid-state based quantum computation and communication. They provide very high crystalline and optical properties and offer a convenient geometry for electrical contacting. Having a complete determination and full control of their emission properties is one of the key goals of nanoscience researchers. Here we use strain as a tool to create in a single magnetic nanowire quantum dot a light-hole exciton, an optically active quasiparticle formed from a single electron bound to a single light hole. In this frame, we provide a general description of the mixing within the hole quadruplet induced by strain or confinement. A multi-instrumental combination of cathodoluminescence, polarisation-resolved Fourier imaging and magneto-optical spectroscopy, allow us to fully characterize the hole ground state, including its valence band mixing with heavy hole states.
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Submitted 24 November, 2016;
originally announced December 2016.
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Deterministic radiative coupling between plasmonic nanoantennas and semiconducting nanowire quantum dots
Authors:
Mathieu Jeannin,
Pamela Rueda-Fonseca,
Edith Bellet-Amalric,
Kuntheak Kheng,
Gilles Nogues
Abstract:
We report on the deterministic coupling between single semiconducting nanowire quantum dots emitting in the visible and plasmonic Au nanoantennas. Both systems are separately carefully characterized through microphotoluminescence and cathodoluminescence. A two-step realignment process using cathodoluminescence allows for electron beam lithography of Au antennas near individual nanowire quantum dot…
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We report on the deterministic coupling between single semiconducting nanowire quantum dots emitting in the visible and plasmonic Au nanoantennas. Both systems are separately carefully characterized through microphotoluminescence and cathodoluminescence. A two-step realignment process using cathodoluminescence allows for electron beam lithography of Au antennas near individual nanowire quantum dots with a precision of 50 nm. A complete set of optical properties are measured before and after antenna fabrication. They evidence both an increase of the NW absorption, and an improvement of the quantum dot emission rate up to a factor two in presence of the antenna.
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Submitted 6 April, 2016;
originally announced April 2016.
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Diffusion-driven growth of nanowires by low-temperature molecular beam epitaxy
Authors:
P. Rueda-Fonseca,
M. Orrù,
E. Bellet-Amalric,
E. Robin,
M. Den Hertog,
Y. Genuist,
R. André,
S. Tatarenko,
J. Cibert
Abstract:
With ZnTe as an example, we use two different methods to unravel the characteristics of the growth of nanowires by gold-catalyzed molecular beam epitaxy at low temperature. In the first approach, CdTe insertions have been used as markers, and the nanowires have been characterized by scanning transmission electron microscopy, including geometrical phase analysis, and energy dispersive electron spec…
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With ZnTe as an example, we use two different methods to unravel the characteristics of the growth of nanowires by gold-catalyzed molecular beam epitaxy at low temperature. In the first approach, CdTe insertions have been used as markers, and the nanowires have been characterized by scanning transmission electron microscopy, including geometrical phase analysis, and energy dispersive electron spectrometry; the second approach uses scanning electron microscopy and the statistics of the relationship between the length of the tapered nanowires and their base diameter. Axial and radial growth are quantified using a diffusion-limited model adapted to the growth conditions; analytical expressions describe well the relationship between the NW length and the total molecular flux (taking into account the orientation of the effusion cells), and the catalyst-nanowire contact area. A long incubation time is observed. This analysis allows us to assess the evolution of the diffusion lengths on the substrate and along the nanowire sidewalls, as a function of temperature and deviation from stoichiometric flux.
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Submitted 7 June, 2016; v1 submitted 31 March, 2016;
originally announced March 2016.
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Optical properties of single ZnTe nanowires grown at low temperature
Authors:
Alberto Artioli,
Pamela Rueda-Fonseca,
Petr Stepanov,
Edith Bellet-Amalric,
Martien Den Hertog,
Catherine Bougerol,
Yann Genuist,
Fabrice Donatini,
Régis André,
Gilles Nogues,
Kuntheak Kheng,
Serge Tatarenko,
David Ferrand,
Joel Cibert
Abstract:
Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature 350\degree under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per micrometer^{2}. The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are <111> orie…
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Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature 350\degree under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per micrometer^{2}. The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are <111> oriented. Low temperature micro-photoluminescence and cathodoluminescence experiments have been performed on single nanowires. We observe a narrow emission line with a blue-shift of 2 or 3 meV with respect to the exciton energy in bulk ZnTe. This shift is attributed to the strain induced by a 5 nm-thick oxide layer covering the nanowires, and this assumption is supported by a quantitative estimation of the strain in the nanowires.
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Submitted 12 June, 2013;
originally announced June 2013.
