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Pixel detector hybridization and integration with anisotropic conductive adhesives
Authors:
Alexander Volker,
Janis Viktor Schmidt,
Dominik Dannheim,
Peter Svihra,
Mateus Vicente Barreto Pinto,
Rui de Oliveira,
Justus Braach,
Xiao Yang,
Marie Ruat,
Débora Magalhaes,
Matteo Centis Vignali,
Giovanni Calderini,
Helge Kristiansen
Abstract:
A reliable and cost-effective interconnect technology is required for the development of hybrid pixel detectors. The interconnect technology needs to be adapted for the pitch and die sizes of the respective applications. For small-scale applications and during the ASIC and sensor development phase, interconnect technologies must also be suitable for the assembly of single-dies typically available…
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A reliable and cost-effective interconnect technology is required for the development of hybrid pixel detectors. The interconnect technology needs to be adapted for the pitch and die sizes of the respective applications. For small-scale applications and during the ASIC and sensor development phase, interconnect technologies must also be suitable for the assembly of single-dies typically available from Multi-Project-Wafer submissions. Within the CERN EP R&D program and the AIDAinnova collaboration, innovative and scalable hybridization concepts are under development for pixel-detector applications in future colliders. This contribution presents recent results of a newly developed in-house single-die interconnection process based on Anisotropic Conductive Adhesives (ACA). The ACA interconnect technology replaces solder bumps with conductive micro-particles embedded in an epoxy layer applied as either film or paste. The electro-mechanical connection between the sensor and ASIC is achieved via thermocompression of the ACA using a flip-chip device bonder. A specific pixel-pad topology is required to enable the connection via micro-particles and create cavities into which excess epoxy can flow. This pixel-pad topology is achieved with an in-house Electroless Nickel Immersion Gold process that is also under development within the project. The ENIG and ACA processes are qualified with a variety of different ASICs, sensors, and dedicated test structures, with pad diameters ranging from 12 μm to 140 μm and pitches between 20 μm and 1.3 mm. The produced assemblies are characterized electrically, with radioactive-source exposures, and in tests with high-momentum particle beams. A focus is placed on recent optimization of the plating and interconnect processes, resulting in an improved plating uniformity and interconnect yield.
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Submitted 18 March, 2024; v1 submitted 15 December, 2023;
originally announced December 2023.
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Inverse Low Gain Avalanche Detector (iLGAD) Periphery Design for X-Ray Applications
Authors:
A. Doblas,
D. Flores,
S. Hidalgo,
N. Moffat,
G. Pellegrini,
D. Quirion,
J. Villegas,
D. Maneuski,
M. Ruat,
P. Fajardo
Abstract:
LGAD technology is established within the field of particle physics, as the baseline technology for the timing detectors of both the ATLAS and CMS upgrades at the HL-LHC. Pixelated LGADs have been proposed for the High Granularity Timing Detector (HGTD) and for the Endcap Timing Layer (ETL) of the ATLAS and CMS experiments, respectively. The drawback of segmenting an LGAD is the non-gain area betw…
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LGAD technology is established within the field of particle physics, as the baseline technology for the timing detectors of both the ATLAS and CMS upgrades at the HL-LHC. Pixelated LGADs have been proposed for the High Granularity Timing Detector (HGTD) and for the Endcap Timing Layer (ETL) of the ATLAS and CMS experiments, respectively. The drawback of segmenting an LGAD is the non-gain area between pixels and the consequent reduction in the fill factor. In this sense, inverse LGAD (iLGAD) technology has been proposed by IMB-CNM to enhance the fill factor and to reach excellent tracking capabilities. In this work, we explore the use of iLGAD sensors for X-Ray applications by developing a new generation of iLGADs. The periphery of the first iLGAD generation is optimized by means of TCAD tools, making them suitable for X-Ray irradiations thanks to the double side optimization. The fabricated iLGAD sensors exhibit good electrical performances before and after an X-Ray irradiation. The second iLGAD generation is able to withstand the same voltage, as contrary to the first iLGAD generation after irradiation.
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Submitted 1 June, 2022; v1 submitted 3 February, 2022;
originally announced February 2022.
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Performance Evaluation of the Analogue Front-End and ADC Prototypes for the Gotthard-II Development
Authors:
Jiaguo Zhang,
Marie Andrä,
Rebecca Barten,
Anna Bergamaschi,
Martin Brückner,
Roberto Dinapoli,
Erik Fröjdh,
Dominic Greiffenberg,
Carlos Lopez-Cuenca,
Davide Mezza,
Aldo Mozzanica,
Marco Ramilli,
Sophie Redford,
Marie Ruat,
Christian Ruder,
Bernd Schmitt,
Xintian Shi,
Dhanya Thattil,
Gemma Tinti,
Monica Turcato,
Seraphin Vettera
Abstract:
Gotthard-II is a silicon microstrip detector developed for the European X-ray Free-Electron Laser (XFEL.EU). Its potential scientific applications include X-ray absorption/emission spectroscopy, hard X-ray high resolution single-shot spectrometry (HiREX), energy dispersive experiments at 4.5 MHz frame rate, beam diagnostics, as well as veto signal generation for pixel detectors. Gotthard-II uses a…
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Gotthard-II is a silicon microstrip detector developed for the European X-ray Free-Electron Laser (XFEL.EU). Its potential scientific applications include X-ray absorption/emission spectroscopy, hard X-ray high resolution single-shot spectrometry (HiREX), energy dispersive experiments at 4.5 MHz frame rate, beam diagnostics, as well as veto signal generation for pixel detectors. Gotthard-II uses a silicon microstrip sensor with a pitch of 50 $μ$m or 25 $μ$m and with 1280 or 2560 channels wire-bonded to readout chips (ROCs). In the ROC, an adaptive gain switching pre-amplifier (PRE), a fully differential Correlated-Double-Sampling (CDS) stage, an Analog-to-Digital Converter (ADC) as well as a Static Random-Access Memory (SRAM) capable of storing all the 2700 images in an XFEL.EU bunch train will be implemented. Several prototypes with different designs of the analogue front-end (PRE and CDS) and ADC test structures have been fabricated in UMC-110 nm CMOS technology and their performance has been evaluated. In this paper, the performance of the analogue front-end and ADC will be summarized.
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Submitted 3 January, 2018; v1 submitted 23 November, 2017;
originally announced November 2017.
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Towards Gotthard-II: Development of A Silicon Microstrip Detector for the European X-ray Free-Electron Laser
Authors:
Jiaguo Zhang,
Marie Andrä,
Rebecca Barten,
Anna Bergamaschi,
Martin Brückner,
Roberto Dinapoli,
Erik Froejdh,
Dominic Greiffenberg,
Carlos Lopez-Cuenca,
Davide Mezza,
Aldo Mozzanica,
Marco Ramilli,
Sophie Redford,
Marie Ruat,
Christian Ruder,
Bernd Schmitt,
Xintian Shi,
Dhanya Thattil,
Gemma Tinti,
Monica Turcato,
Seraphin Vettera
Abstract:
Gotthard-II is a 1-D microstrip detector specifically developed for the European X-ray Free-Electron Laser. It will not only be used in energy dispersive experiments but also as a beam diagnostic tool with additional logic to generate veto signals for the other 2-D detectors. Gotthard-II makes use of a silicon microstrip sensor with a pitch of either 50 μm or 25 μm and with 1280 or 2560 channels w…
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Gotthard-II is a 1-D microstrip detector specifically developed for the European X-ray Free-Electron Laser. It will not only be used in energy dispersive experiments but also as a beam diagnostic tool with additional logic to generate veto signals for the other 2-D detectors. Gotthard-II makes use of a silicon microstrip sensor with a pitch of either 50 μm or 25 μm and with 1280 or 2560 channels wire-bonded to adaptive gain switching readout chips. Built-in analog-to-digital converters and digital memories will be implemented in the readout chip for a continuous conversion and storage of frames for all bunches in the bunch train. The performance of analogue front-end prototypes of Gotthard has been investigated in this work. The results in terms of noise, conversionngain, dynamic range, obtained by means of infrared laser and X-rays, will be shown. In particular, the effects of the strip-to-strip coupling are studied in detail and it is found that the reduction of the coupling effects is one of the key factors for the development of the analogue front-end of Gotthard-II.
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Submitted 20 November, 2017;
originally announced November 2017.
