Showing 1–50 of 68 results for author: Rozenberg, M J

A dynamical memory with only one spiking neuron

Authors: Damien Depannemaecker, Adrien d'Hollande, Jiaming Wu, Marcelo J. Rozenberg

Abstract: Common wisdom indicates that to implement a Dynamical Memory with spiking neurons two ingredients are necessary: recurrence and a neuron population. Here we shall show that the second requirement is not needed. We shall demonstrate that under very general assumptions a single recursive spiking neuron can realize a robust model of a dynamical memory. We demonstrate the implementation of a dynamical… ▽ More Common wisdom indicates that to implement a Dynamical Memory with spiking neurons two ingredients are necessary: recurrence and a neuron population. Here we shall show that the second requirement is not needed. We shall demonstrate that under very general assumptions a single recursive spiking neuron can realize a robust model of a dynamical memory. We demonstrate the implementation of a dynamical memory in both, software and hardware. In the former case, we introduce trivial extensions of the popular aQIF and AdEx models. In the latter, we show traces obtained in a circuit model with a recently proposed memristive spiking neuron. We show that the bistability of the theoretical models can be understood in terms of a self-consistent problem that can be represented geometrically. Our minimal dynamical memory model provides a simplest implementation of an important neuro-computational primitive, which can be useful in navigation system models based on purely spiking dynamics. A one neuron dynamical memory may also provides a natural explanation to the surprising recent observation that the excitation bump in Drosophila's ellipsoidal body is made by just a handful of neurons. △ Less

Submitted 21 May, 2025; originally announced May 2025.

Comments: 17 pages, 9 figures

Magnetoresistivity in the Antiferromagnetic Hubbard Model

Authors: Joel Bobadilla, Marcelo J. Rozenberg, Alberto Camjayi

Abstract: We investigate the magnetotransport properties of the half-filled antiferromagnetic (AF) one-band Hubbard model under an external magnetic field using the single-site dynamical mean-field approximation (DMFT). Particular attention is paid to the mechanisms driving the magnetoresistivity behavior. We analyze the dependence of magnetoresistivity on temperature and the strength of the applied magneti… ▽ More We investigate the magnetotransport properties of the half-filled antiferromagnetic (AF) one-band Hubbard model under an external magnetic field using the single-site dynamical mean-field approximation (DMFT). Particular attention is paid to the mechanisms driving the magnetoresistivity behavior. We analyze the dependence of magnetoresistivity on temperature and the strength of the applied magnetic field, providing insights into the interplay between magnetic fluctuations and transport properties in AF systems. △ Less

Submitted 15 April, 2025; originally announced April 2025.

Charge gain via solid-state gating of an oxide Mott system

Authors: Lishai Shoham, Itai Silber, Gal Tuvia, Maria Baskin, Soo-Yoon Hwang, Si-Young Choi, Myung-Geun Han, Yimei Zhu, Eilam Yalon, Marcelo J. Rozenberg, Yoram Dagan, Felix Trier, Lior Kornblum

Abstract: The modulation of channel conductance in field-effect transistors (FETs) via metal-oxide-semiconductor (MOS) structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material n… ▽ More The modulation of channel conductance in field-effect transistors (FETs) via metal-oxide-semiconductor (MOS) structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material near its metal to insulator transition (MIT) offers prospects of substantial modulation of the free carriers and electrical resistivity through small changes in band filling. While electrostatic control of the MIT has been previously reported, the advancement of Mott materials towards novel Mott transistors requires the realization of their charge gain prospects in a solid-state device. In this study, we present gate-control of electron correlation using a solid-state device utilizing the oxide Mott system $La_{1-x}Sr_xVO_3$ as a correlated FET channel. We report on a gate resistance response that cannot be explained in a purely electrostatic framework, suggesting at least $\times100$ charge gain originating from the correlated behavior. These preliminary results pave the way towards the development of highly efficient, low-power electronic devices that could surpass the performance bottlenecks of conventional FETs by leveraging the electronic phase transitions of correlated electron systems. △ Less

Submitted 24 November, 2024; originally announced November 2024.

Journal ref: APL Mater. 13, 021116 (2025)

Solid State Neuroscience: Spiking Neural Networks as Time Matter

Authors: Marcelo J. Rozenberg

Abstract: We aim at building a bridge between to {\it a priori} disconnected fields: Neuroscience and Material Science. We construct an analogy based on identifying spikes events in time with the positions of particles of matter. We show that one may think of the dynamical states of spiking neurons and spiking neural networks as {\it time-matter}. Namely, a structure of spike-events in time having analogue… ▽ More We aim at building a bridge between to {\it a priori} disconnected fields: Neuroscience and Material Science. We construct an analogy based on identifying spikes events in time with the positions of particles of matter. We show that one may think of the dynamical states of spiking neurons and spiking neural networks as {\it time-matter}. Namely, a structure of spike-events in time having analogue properties to that of ordinary matter. We can define for neural systems notions equivalent to the equations of state, phase diagrams and their phase transitions. For instance, the familiar Ideal Gas Law relation (P$v$ = constant) emerges as analogue of the Ideal Integrate and Fire neuron model relation ($I_{in}$ISI = constant). We define the neural analogue of the spatial structure correlation function, that can characterize spiking states with temporal long-range order, such as regular tonic spiking. We also define the ``neuro-compressibility'' response function in analogy to the lattice compressibility. We show that similarly to the case of ordinary matter, the anomalous behavior of the neuro-compressibility is a precursor effect that signals the onset of changes in spiking states. We propose that the notion of neuro-compressibility may open the way to develop novel medical tools for the early diagnose of diseases. It may allow to predict impending anomalous neural states, such as Parkinson's tremors, epileptic seizures, electric cardiopathies, and perhaps may even serve as a predictor of the likelihood of regaining consciousness. △ Less

Submitted 16 February, 2023; originally announced February 2023.

Comments: 8 pages, 8 figures

Bandwidth Control and Symmetry Breaking in a Mott-Hubbard Correlated Metal

Authors: Lishai Shoham, Maria Baskin, Tom Tiwald, Guy Ankonina, Myung-Geun Han, Anna Zakharova, Shaked Caspi, Shay Joseph, Yimei Zhu, Isao H. Inoue, Cinthia Piamonteze, Marcelo J. Rozenberg, Lior Kornblum

Abstract: In Mott materials strong electron correlation yields a spectrum of complex electronic structures. Recent synthesis advancements open realistic opportunities for harnessing Mott physics to design transformative devices. However, a major bottleneck in realizing such devices remains the lack of control over the electron correlation strength. This stems from the complexity of the electronic structure,… ▽ More In Mott materials strong electron correlation yields a spectrum of complex electronic structures. Recent synthesis advancements open realistic opportunities for harnessing Mott physics to design transformative devices. However, a major bottleneck in realizing such devices remains the lack of control over the electron correlation strength. This stems from the complexity of the electronic structure, which often veils the basic mechanisms underlying the correlation strength. Here, we present control of the correlation strength by tuning the degree of orbital overlap using picometer-scale lattice engineering. We illustrate how bandwidth control and concurrent symmetry breaking can govern the electronic structure of a correlated $SrVO_3$ model system. We show how tensile and compressive biaxial strain oppositely affect the $SrVO_3$ in-plane and out-of-plane orbital occupancy, resulting in the partial alleviation of the orbital degeneracy. We derive and explain the spectral weight redistribution under strain and illustrate how high tensile strain drives the system towards a Mott insulating state. Implementation of such concepts will drive correlated electron phenomena closer towards new solid state devices and circuits. These findings therefore pave the way for understanding and controlling electron correlation in a broad range of functional materials, driving this powerful resource for novel electronics closer towards practical realization. △ Less

Submitted 21 April, 2023; v1 submitted 8 February, 2023; originally announced February 2023.

Journal ref: Adv. Fun. Mater. 33, 2302330 (2023)

Characteristic lengthscales of the electrically-induced insulator-to-metal transition

Authors: Theodor Luibrand, Adrien Bercher, Rodolfo Rocco, Farnaz Tahouni-Bonab, Lucia Varbaro, Carl Willem Rischau, Claribel Domínguez, Yixi Zhou, Weiwei Luo, Soumen Bag, Lorenzo Fratino, Reinhold Kleiner, Stefano Gariglio, Dieter Koelle, Jean-Marc Triscone, Marcelo J. Rozenberg, Alexey B. Kuzmenko, Stefan Guénon, Javier del Valle

Abstract: Some correlated materials display an insulator-to-metal transition as the temperature is increased. In most cases this transition can also be induced electrically, resulting in volatile resistive switching due to the formation of a conducting filament. While this phenomenon has attracted much attention due to potential applications, many fundamental questions remain unaddressed. One of them is its… ▽ More Some correlated materials display an insulator-to-metal transition as the temperature is increased. In most cases this transition can also be induced electrically, resulting in volatile resistive switching due to the formation of a conducting filament. While this phenomenon has attracted much attention due to potential applications, many fundamental questions remain unaddressed. One of them is its characteristic lengths: what sets the size of these filaments, and how does this impact resistive switching properties. Here we use a combination of wide-field and scattering-type scanning near-field optical microscopies to characterize filament formation in NdNiO3 and SmNiO3 thin films. We find a clear trend: smaller filaments increase the current density, yielding sharper switching and a larger resistive drop. With the aid of numerical simulations, we discuss the parameters controlling the filament width and, hence, the switching properties. △ Less

Submitted 1 January, 2023; originally announced January 2023.

Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V$_2$O$_3$

Authors: Maximilian Thees, Min-Han Lee, Rosa Luca Bouwmeester, Pedro H. Rezende-Gonçalves, Emma David, Alexandre Zimmers, Emmanouil Frantzeskakis, Nicolas M. Vargas, Yoav Kalcheim, Patrick Le Fèvre, Koji Horiba, Hiroshi Kumigashira, Silke Biermann, Juan Trastoy, Marcelo J. Rozenberg, Ivan K. Schuller, Andrés F. Santander-Syro

Abstract: In solids, strong repulsion between electrons can inhibit their movement and result in a "Mott" metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and mome… ▽ More In solids, strong repulsion between electrons can inhibit their movement and result in a "Mott" metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and momentum-resolved electronic structure of the system, the only direct way to probe both itinerant and localized states, has been elusive. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that in V$_2$O$_3$ the temperature-induced MIT is characterized by the progressive disappearance of its itinerant conduction band, without any change in its energy-momentum dispersion, and the simultaneous shift to larger binding energies of a quasi-localized state initially located near the Fermi level. △ Less

Submitted 9 July, 2022; originally announced July 2022.

Comments: Main Text (4 figures) and Supplementary Information (12 figures)

Journal ref: Science Advances 7(45), eabj1164 (2021)

Doping-driven pseudogap-metal-to-metal transition in correlated electron systems

Authors: L. Fratino, S. Bag, A. Camjayi, M. Civelli, M. J. Rozenberg

Abstract: We establish that a doping-driven first-order metal-to-metal transition, from a pseudogap metal to Fermi Liquid, can occur in correlated quantum materials. Our result is based on the exact Dynamical Mean Field Theory solution of the Dimer Hubbard Model. This transition elucidates the origin of many exotic features in doped Mott materials, like the pseudogap in cuprates, incoherent bad metals, enha… ▽ More We establish that a doping-driven first-order metal-to-metal transition, from a pseudogap metal to Fermi Liquid, can occur in correlated quantum materials. Our result is based on the exact Dynamical Mean Field Theory solution of the Dimer Hubbard Model. This transition elucidates the origin of many exotic features in doped Mott materials, like the pseudogap in cuprates, incoherent bad metals, enhanced compressibility and orbital selective Mott transition. This phenomenon is suggestive to be at the roots of the many exotic phases appearing in the phase diagram of correlated materials. △ Less

Submitted 14 September, 2021; originally announced September 2021.

Comments: 4 pages 4 figures

Phenomenological classification of metals based on resistivity

Authors: Qikai Guo, César Magén, Marcelo J. Rozenberg, Beatriz Noheda

Abstract: Efforts to understand metallic behaviour have led to important concepts such as those of strange metal, bad metal or Planckian metal. However, a unified description of metallic resistivity is still missing. An empirical analysis of a large variety of metals shows that the parallel resistor formalism used in the cuprates, which includes T-linear and T-quadratic dependence of the electron scattering… ▽ More Efforts to understand metallic behaviour have led to important concepts such as those of strange metal, bad metal or Planckian metal. However, a unified description of metallic resistivity is still missing. An empirical analysis of a large variety of metals shows that the parallel resistor formalism used in the cuprates, which includes T-linear and T-quadratic dependence of the electron scattering rates, can be used to provide a phenomenological description of the electrical resistivity in all metals, where these two contributions are shown to correspond to the two first terms of a Taylor expansion of the resistivity, detached of their physics origin, and thus, valid for any metal. Here we show that the different metallic classes are then determined by the relative magnitude of these two components and the magnitude of the extrapolated residual resistivity. These two parameters allow to categorize a few systems that are notoriously hard to ascribe to one of the currently accepted metallic classes. This approach also reveals that the T-linear term has a common origin in all cases, strengthening the arguments that propose the universal character of the Planckian dissipation bound. △ Less

Submitted 14 August, 2022; v1 submitted 5 September, 2021; originally announced September 2021.

Comments: 16 pages, 44 figures

Journal ref: Physical Review B, 2022, 106(8): 085141

Quantum interference effects of out-of-plane confinement on two-dimensional electron systems in oxides

Authors: A. F. Santander-Syro, J. Dai, T. C. Rödel, E. Frantzeskakis, F. Fortuna, R. Weht, M. J. Rozenberg

Abstract: It was recently discovered that a conductive, metallic state is formed on the surface of some insulating oxides. Firstly observed on SrTiO$_3$(001), it was then found in other compounds as diverse as anatase TiO$_2$, KTaO$_3$, BaTiO$_3$, ZnO, and also on different surfaces of SrTiO$_3$ (or other oxides) with different symmetries. The spatial extension of the wave function of this electronic state… ▽ More It was recently discovered that a conductive, metallic state is formed on the surface of some insulating oxides. Firstly observed on SrTiO$_3$(001), it was then found in other compounds as diverse as anatase TiO$_2$, KTaO$_3$, BaTiO$_3$, ZnO, and also on different surfaces of SrTiO$_3$ (or other oxides) with different symmetries. The spatial extension of the wave function of this electronic state is of only a few atomic layers. Experiments indicate its existence is related to the presence of oxygen vacancies induced at or near the surface of the oxide. In this article we present a simplified model aimed at describing the effect of its small spatial extension on measurements of its 3D electronic structure by angular resolved photoemission spectroscopy (ARPES). For the sake of clarity, we base our discussion on a simple tight binding scheme plus a confining potential that is assumed to be induced by the oxygen vacancies. Our model parameters are, nevertheless, obtained from density functional calculations. With this methodology we can explain from a very simple concept of selective interference the "wobbling", i.e., the photoemission intensity modulation and/or apparent dispersion of the Fermi surface and spectra along the out-of-plane ($k_z$) direction, and the "mixed 2D/3D" characteristics observed in some experiments. We conclude that the critical model parameters for such an effect are the relative strength of the electronic hopping of each band and the height/width aspect ratio of the surface confining potential. By considering recent photoemission measurements under the light of our findings, we can get relevant information on the electronic wave functions and of the nature of the confining potential. △ Less

Submitted 10 July, 2020; originally announced July 2020.

Comments: Accepted to Physical Review B

Odd-frequency superconductivity in dilute magnetic superconductors

Authors: Flávio L. N. Santos, Vivien Perrin, François Jamet, Marcello Civelli, Pascal Simon, Maria C. O. Aguiar, Eduardo Miranda, Marcelo J. Rozenberg

Abstract: We show that dilute magnetic impurities in a conventional superconductor give origin to an odd-frequency component of superconductivity, manifesting itself in Yu-Shiba-Rusinov bands forming within the bulk superconducting gap. Our results are obtained in a general model solved within the dynamical mean field theory. By exploiting a disorder analysis and the limit to a single impurity, we are able… ▽ More We show that dilute magnetic impurities in a conventional superconductor give origin to an odd-frequency component of superconductivity, manifesting itself in Yu-Shiba-Rusinov bands forming within the bulk superconducting gap. Our results are obtained in a general model solved within the dynamical mean field theory. By exploiting a disorder analysis and the limit to a single impurity, we are able to provide general expressions that can be used to extract explicitly the odd-frequency superconducting function from scanning tunneling measurements. △ Less

Submitted 12 August, 2020; v1 submitted 25 May, 2020; originally announced May 2020.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. Research 2, 033229 (2020)

Disordered Mott-Hubbard Physics in Nanoparticle Solids: Persistent Gap Across the Disorder-localized-to-Mott-localized Transition

Authors: Davis Unruh, Alberto Camjayi, Chase Hansen, Joel Bobadilla, Marcelo J. Rozenberg, Gergely T. Zimanyi

Abstract: We show that Nanoparticle (NP) solids are an exciting platform to seek new insights into the disordered Mott-Hubbard physics. We developed a "Hierarchical Nanoparticle Transport Simulator" (HINTS), which builds from localized states to describe the Disorder-localized and Mott-localized phases, and the transitions out of these localized phases. We also studied the interplay between correlations and… ▽ More We show that Nanoparticle (NP) solids are an exciting platform to seek new insights into the disordered Mott-Hubbard physics. We developed a "Hierarchical Nanoparticle Transport Simulator" (HINTS), which builds from localized states to describe the Disorder-localized and Mott-localized phases, and the transitions out of these localized phases. We also studied the interplay between correlations and disorder in the corresponding multi-orbital Hubbard model at and away from integer filling by Dynamical Mean Field Theory. This approach is complementary to HINTS, as it builds from the metallic phase of the NP solid. The mobility scenarios and phase diagrams produced by the two methods are strikingly similar, and account for the mobilities measured in NP solids. △ Less

Submitted 30 July, 2020; v1 submitted 25 March, 2019; originally announced March 2019.

Comments: 6 pages, 5 figures

Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing

Authors: Javier del Valle, Juan Gabriel Ramírez, Marcelo J. Rozenberg, Ivan K. Schuller

Abstract: This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled) implementation using transition metal oxides materials, which exhibit unique properties that emulate key functionalities needed for this application. In the Introducti… ▽ More This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled) implementation using transition metal oxides materials, which exhibit unique properties that emulate key functionalities needed for this application. In the Introduction, we compare the main differences between a conventional computational machine, based on the Turing-von Neumann paradigm, to a Neuromorphic machine, which tries to emulate important functionalities of a biological brain. We also describe the main electrical properties of biological systems, which would be useful to implement in a charge-based system. In Chapter II, we describe the main components of a possible solid-state implementation. In Chapter III, we describe a variety of Resistive Switching phenomena, which may serve as the functional basis for the implementation of key devices for Neuromorphic computing. In Chapter IV we describe why transition metal oxides, are promising materials for future Neuromorphic machines. Theoretical models describing different resistive switching mechanisms are discussed in Chapter V while existing implementations are described in Chapter VI. Chapter VII presents applications to practical problems. We list in Chapter VIII important basic research challenges and open issues. We discuss issues related to specific implementations, novel materials, devices and phenomena. The development of reliable, fault tolerant, energy efficient devices, their scaling and integration into a Neuromorphic computer may bring us closer to the development of a machine that rivals the brain. △ Less

Submitted 31 October, 2018; originally announced December 2018.

Comments: To appear in Journal of Applied Physics. 43 pages

Multiple crossovers and coherent states in a Mott-Peierls insulator

Authors: O. Nájera, M. Civelli, V. Dobrosavljević, M. J. Rozenberg

Abstract: We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insulator transition lines of the phase diagram and the break down of the different solutions that occur along them. We focus on the specific issue of the debated Mott-Peierls insulator crossover and describe the systematic ev… ▽ More We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insulator transition lines of the phase diagram and the break down of the different solutions that occur along them. We focus on the specific issue of the debated Mott-Peierls insulator crossover and describe the systematic evolution of the electronic structure across the phase diagram. We found that at low intra-dimer hopping the emerging local magnetic moments can unbind above a characteristic singlet temperature $T^*$. Upon increasing the inter-dimer hopping subtle changes occur in the electronic structure. Notably, we find Hubbard bands of a mix character with coherent and incoherent excitations. We argue that this state is relevant for VO$_2$ and its signatures may be observed in spectroscopic studies, and possibly through pump-probe experiments. △ Less

Submitted 20 October, 2017; v1 submitted 28 July, 2017; originally announced July 2017.

Comments: 17 pages, 17 figures

Journal ref: Phys. Rev. B 97, 045108 (2018)

Resolving the VO$_2$ controversy: Mott mechanism dominates the insulator-to-metal transition

Authors: Óscar Nájera, Marcello Civelli, Vladimir Dobrosavljević, Marcelo J. Rozenberg

Abstract: We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model within Dynamical Mean Field Theory, characterizing in detail the metal-insulator transition and finding new features in the electronic states. We compare our resul… ▽ More We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model within Dynamical Mean Field Theory, characterizing in detail the metal-insulator transition and finding new features in the electronic states. We compare our results with available experimental data obtaining good agreement in the relevant model parameter range. Crucially, we can account for puzzling optical conductivity data obtained within the hysteresis region, which we associate to a novel metallic state characterized by a split heavy quasiparticle band. Our results show that the thermal-driven insulator-to-metal transition in VO$_2$ is compatible with a Mott electronic mechanism, providing fresh insight to a long standing "chicken-and-egg" debate and calling for further research of "Mottronics" applications of this system. △ Less

Submitted 11 January, 2017; v1 submitted 9 June, 2016; originally announced June 2016.

Comments: 5 pages, 4 figures + supplementary Material

Journal ref: Phys. Rev. B 95, 035113 (2017)

Hubbard band or oxygen vacancy states in the correlated electron metal SrVO$_3$?

Authors: S. Backes, T. C. Rödel, F. Fortuna, E. Frantzeskakis, P. Le Fèvre, F. Bertran, M. Kobayashi, R. Yukawa, T. Mitsuhashi, M. Kitamura, K. Horiba, H. Kumigashira, R. Saint-Martin, A. Fouchet, B. Berini, Y. Dumont, A. J. Kim, F. Lechermann, H. O. Jeschke, M. J. Rozenberg, R. Valentí, A. F. Santander-Syro

Abstract: We study the effect of oxygen vacancies on the electronic structure of the model strongly correlated metal SrVO$_3$. By means of angle-resolved photoemission (ARPES) synchrotron experiments, we investigate the systematic effect of the UV dose on the measured spectra. We observe the onset of a spurious dose-dependent prominent peak at an energy range were the lower Hubbard band has been previously… ▽ More We study the effect of oxygen vacancies on the electronic structure of the model strongly correlated metal SrVO$_3$. By means of angle-resolved photoemission (ARPES) synchrotron experiments, we investigate the systematic effect of the UV dose on the measured spectra. We observe the onset of a spurious dose-dependent prominent peak at an energy range were the lower Hubbard band has been previously reported in this compound, raising questions on its previous interpretation. By a careful analysis of the dose dependent effects we succeed in disentangling the contributions coming from the oxygen vacancy states and from the lower Hubbard band. We obtain the intrinsic ARPES spectrum for the zero-vacancy limit, where a clear signal of a lower Hubbard band remains. We support our study by means of state-of-the-art ab initio calculations that include correlation effects and the presence of oxygen vacancies. Our results underscore the relevance of potential spurious states affecting ARPES experiments in correlated metals, which are associated to the ubiquitous oxygen vacancies as extensively reported in the context of a two-dimensional electron gas (2DEG) at the surface of insulating $d^0$ transition metal oxides. △ Less

Submitted 22 February, 2016; originally announced February 2016.

Comments: Manuscript + Supplemental Material, 12 pages, 9 figures

Journal ref: Phys. Rev. B 94, 241110 (2016)

Magnetism, spin texture and in-gap states: Atomic specialization at the surface of oxygen-deficient SrTiO$_3$

Authors: Michaela Altmeyer, Harald O. Jeschke, Oliver Hijano-Cubelos, Cyril Martins, Frank Lechermann, Klaus Koepernik, Andres F. Santander-Syro, Marcelo J. Rozenberg, Roser Valenti, Marc Gabay

Abstract: Motivated by recent spin- and angular-resolved photoemission (SARPES) measurements performed on the two-dimensional electronic states confined near the (001) surface of SrTiO$_3$ in the presence of oxygen vacancies, we explore their spin structure by means of ab initio density functional theory (DFT) calculations of slabs. Relativistic nonmagnetic DFT calculations display Rashba-like spin winding… ▽ More Motivated by recent spin- and angular-resolved photoemission (SARPES) measurements performed on the two-dimensional electronic states confined near the (001) surface of SrTiO$_3$ in the presence of oxygen vacancies, we explore their spin structure by means of ab initio density functional theory (DFT) calculations of slabs. Relativistic nonmagnetic DFT calculations display Rashba-like spin winding with a splitting of a few meV and when surface magnetism on the Ti ions is in- cluded, bands become spin-split with an energy difference ~100 meV at the $Γ$ point, consistent with SARPES findings. While magnetism tends to suppress the effects of the relativistic Rashba interaction, signatures of it are still clearly visible in terms of complex spin textures. Furthermore, we observe an atomic specialization phenomenon, namely, two types of electronic contributions: one is from Ti atoms neighboring the oxygen vacancies that acquire rather large magnetic moments and mostly create in-gap states; another comes from the partly polarized t$_{2g}$ itinerant electrons of Ti atoms lying further away from the oxygen vacancy, which form the two-dimensional electron system and are responsible for the Rashba spin winding and the spin splitting at the Fermi surface. △ Less

Submitted 7 April, 2016; v1 submitted 27 November, 2015; originally announced November 2015.

Comments: 6 pages, 4 figures, for Suppl. Mat. please contact first author

Journal ref: Phys. Rev. Lett. 116, 157203 (2016)

Engineering two-dimensional electron gases at the (001) and (101) surfaces of TiO2 anatase using light

Authors: T. C. Rödel, F. Fortuna, F. Bertran, M. Gabay, M. J. Rozenberg, A. F. Santander-Syro, P. Le Fèvre

Abstract: We report the existence of metallic two-dimensional electron gases (2DEGs) at the (001) and (101) surfaces of bulk-insulating TiO2 anatase due to local chemical doping by oxygen vacancies in the near-surface region. Using angle-resolved photoemission spectroscopy, we find that the electronic structure at both surfaces is composed of two occupied subbands of d_xy orbital character. While the Fermi… ▽ More We report the existence of metallic two-dimensional electron gases (2DEGs) at the (001) and (101) surfaces of bulk-insulating TiO2 anatase due to local chemical doping by oxygen vacancies in the near-surface region. Using angle-resolved photoemission spectroscopy, we find that the electronic structure at both surfaces is composed of two occupied subbands of d_xy orbital character. While the Fermi surface observed at the (001) termination is isotropic, the 2DEG at the (101) termination is anisotropic and shows a charge carrier density three times larger than at the (001) surface. Moreover, we demonstrate that intense UV synchrotron radiation can alter the electronic structure and stoichiometry of the surface up to the complete disappearance of the 2DEG. These results open a route for the nano-engineering of confined electronic states, the control of their metallic or insulating nature, and the tailoring of their microscopic symmetry, using UV illumination at different surfaces of anatase. △ Less

Submitted 14 July, 2015; originally announced July 2015.

Comments: Article + Supplemental Material. See also the Synopsis @ Physics: http://physics.aps.org/synopsis-for/10.1103/PhysRevB.92.041106

Journal ref: Phys. Rev. B 92, 041106(R) (2015)

First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa4Se8

Authors: A. Camjayi, C. Acha, R. Weht, M. G. Rodríguez, B. Corraze, E. Janod, L. Cario, M. J. Rozenberg

Abstract: The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of t… ▽ More The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement. △ Less

Submitted 15 September, 2014; originally announced September 2014.

Comments: 5 pages and 4 figures. Supplemental material: 2 pages, 2 figures

Journal ref: Phys. Rev. Lett. 113, 086404 (2014)

Localised Wannier orbital basis for the Mott insulators GaV4S8 and GaTa4Se8

Authors: A. Camjayi, R. Weht, M. J. Rozenberg

Abstract: We study the electronic properties of GaV4S8 (GVS) and GaTaSe8 (GTS), two distant members within the large family of chalcogenides AM4X8, with A={Ga, Ge}, M={V, Nb, Ta, Mo} and X={S, Se}. While all these compounds are Mott insulators, their ground state show many types of magnetic order, with GVS being ferromagnetic and GTS non-magnetic. Based on their bandstructures, calculated with Density Funct… ▽ More We study the electronic properties of GaV4S8 (GVS) and GaTaSe8 (GTS), two distant members within the large family of chalcogenides AM4X8, with A={Ga, Ge}, M={V, Nb, Ta, Mo} and X={S, Se}. While all these compounds are Mott insulators, their ground state show many types of magnetic order, with GVS being ferromagnetic and GTS non-magnetic. Based on their bandstructures, calculated with Density Functional Theory methods, we compute an effective tight binding Hamiltonian in a localised Wannier basis set, for each one of the two compounds. The localised orbitals provide a very accurate representation of the bandstructure, with hopping amplitudes that rapidly decrease with distance. We estimate the super-exchange interactions and show that the Coulomb repulsion with the Hund's coupling may account the for the different ground states observed in GVS and GTS. Our localised Wannier basis provides a starting point for realistic Dynamical Mean Field Theory studies of strong correlation effects in this family compounds. △ Less

Submitted 27 August, 2014; originally announced August 2014.

Comments: 5 pages, 5 figures

Journal ref: EPL, 100 (2012) 57004

Orientational tuning of the Fermi sea of confined electrons at the SrTiO3 (110) and (111) surfaces

Authors: T. C. Rödel, C. Bareille, F. Fortuna, C. Baumier, F. Bertran, P. Le Fèvre, M. Gabay, O. Hijano Cubelos, M. J. Rozenberg, T. Maroutian, P. Lecoeur, A. F. Santander-Syro

Abstract: We report the existence of confined electronic states at the (110) and (111) surfaces of SrTiO3. Using angle-resolved photoemission spectroscopy, we find that the corresponding Fermi surfaces, subband masses, and orbital ordering are different from the ones at the (001) surface of SrTiO3. This occurs because the crystallographic symmetries of the surface and sub-surface planes, and the electron ef… ▽ More We report the existence of confined electronic states at the (110) and (111) surfaces of SrTiO3. Using angle-resolved photoemission spectroscopy, we find that the corresponding Fermi surfaces, subband masses, and orbital ordering are different from the ones at the (001) surface of SrTiO3. This occurs because the crystallographic symmetries of the surface and sub-surface planes, and the electron effective masses along the confinement direction, influence the symmetry of the electronic structure and the orbital ordering of the t2g manifold. Remarkably, our analysis of the data also reveals that the carrier concentration and thickness are similar for all three surface orientations, despite their different polarities. The orientational tuning of the microscopic properties of two-dimensional electron states at the surface of SrTiO3 echoes the tailoring of macroscopic (e.g. transport) properties reported recently in LaAlO3/SrTiO3 (110) and (111) interfaces, and is promising for searching new types of 2D electronic states in correlated-electron oxides. △ Less

Submitted 27 May, 2014; originally announced May 2014.

Comments: Accepted for publication as a Letter in Physical Review Applied

Journal ref: Phys. Rev. Applied 1, 051002 (2014)

Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit

Authors: P. Stoliar, P. Levy, M. J. Sánchez, A. G. Leyva, C. A. Albornoz, F. Gomez-Marlasca, A. Zanini, C. Toro Salazar, N. Ghenzi, M. J. Rozenberg

Abstract: We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS devi… ▽ More We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs. △ Less

Submitted 14 October, 2013; originally announced October 2013.

Comments: Accepted for publication in the IEEE Transactions on CAS II

Enhanced and continuous electrostatic carrier doping on the SrTiO$_{3}$ surface

Authors: Azar B. Eyvazov, Isao H. Inoue, Pablo Stoliar, Marcelo J. Rozenberg, Christos Panagopoulos

Abstract: Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta$_{2}$O$_{5}$ hybrid gate insulator and fabricate FET devices o… ▽ More Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta$_{2}$O$_{5}$ hybrid gate insulator and fabricate FET devices on single-crystalline SrTiO$_{3}$, which has been regarded as a bedrock material for oxide electronics. The gate insulator accumulates up to $\sim10^{13}$cm$^{-2}$ carriers, while the field-effect mobility is kept at 10\,cm$^2$/Vs even at room temperature. Further to the exceptional performance of our devices, the enhanced compatibility of high carrier density and high mobility revealed the mechanism for the long standing puzzle of the distribution of electrostatically doped carriers on the surface of SrTiO$_{3}$. Namely, the formation and continuous evolution of field domains and current filaments. △ Less

Submitted 7 May, 2013; originally announced May 2013.

Comments: Supplementary Information: <http://www.nature.com/srep/2013/130424/srep01721/extref/srep01721-s1.pdf>

Journal ref: Scientific Reports 3, 1721 (2013)

Phase diagram of the asymmetric Hubbard model and an entropic chromatographic method for cooling cold fermions in optical lattices

Authors: E. A. Winograd, R. Chitra, M. J. Rozenberg

Abstract: We study the phase diagram of the asymmetric Hubbard model (AHM), which is characterized by different values of the hopping for the two spin projections of a fermion or equivalently, two different orbitals. This model is expected to provide a good description of a mass-imbalanced cold fermionic mixture in a 3D optical lattice. We use the dynamical mean field theory to study various physical proper… ▽ More We study the phase diagram of the asymmetric Hubbard model (AHM), which is characterized by different values of the hopping for the two spin projections of a fermion or equivalently, two different orbitals. This model is expected to provide a good description of a mass-imbalanced cold fermionic mixture in a 3D optical lattice. We use the dynamical mean field theory to study various physical properties of this system. In particular, we show how orbital-selective physics, observed in multi-orbital strongly correlated electron systems, can be realized in such a simple model. We find that the density distribution is a good probe of this orbital selective crossover from a Fermi liquid to a non-Fermi liquid state. Below an ordering temperature $T_o$, which is a function of both the interaction and hopping asymmetry, the system exhibits staggered long range orbital order. Apart from the special case of the symmetric limit, i.e., Hubbard model, where there is no hopping asymmetry, this orbital order is accompanied by a true charge density wave order for all values of the hopping asymmetry. We calculate the order parameters and various physical quantities including the thermodynamics in both the ordered and disordered phases. We find that the formation of the charge density wave is signaled by an abrupt increase in the sublattice double occupancies. Finally, we propose a new method, entropic chromatography, for cooling fermionic atoms in optical lattices, by exploiting the properties of the AHM. To establish this cooling strategy on a firmer basis, we also discuss the variations in temperature induced by the adiabatic tuning of interactions and hopping parameters. △ Less

Submitted 6 December, 2012; originally announced December 2012.

Comments: 16 pages, 19 figs

Journal ref: Phys. Rev. B 86, 195118 (2012)

Orbital selective crossover and Mott transitions in an asymmetric Hubbard model of cold atoms in optical lattices

Authors: E. A. Winograd, R. Chitra, M. J. Rozenberg

Abstract: We study the asymmetric Hubbard model at half-filling as a generic model to describe the physics of two species of repulsively interacting fermionic cold atoms in optical lattices. We use Dynamical Mean Field Theory to obtain the paramagnetic phase diagram of the model as function of temperature, interaction strength and hopping asymmetry. A Mott transition with a region of two coexistent solution… ▽ More We study the asymmetric Hubbard model at half-filling as a generic model to describe the physics of two species of repulsively interacting fermionic cold atoms in optical lattices. We use Dynamical Mean Field Theory to obtain the paramagnetic phase diagram of the model as function of temperature, interaction strength and hopping asymmetry. A Mott transition with a region of two coexistent solutions is found for all nonzero values of the hopping asymmetry. At low temperatures the metallic phase is a heavy Fermi-liquid, qualitatively analogous to the Fermi liquid state of the symmetric Hubbard model. Above a coherence temperature, an orbital-selective crossover takes place, wherein one fermionic species effectively localizes, and the resulting bad metallic state resembles the non-Fermi liquid state of the Falicov-Kimball model. We compute observables relevant to cold atom systems such as the double occupation, the specific heat and entropy and characterize their behavior in the different phases. △ Less

Submitted 10 January, 2012; originally announced January 2012.

Journal ref: Phys. Rev. B 84, 233102 (2011)

A path to poor coherence in heavy fermions from Mott physics and hybridization

Authors: A. Amaricci, L. de Medici, G. Sordi, M. J. Rozenberg, M. Capone

Abstract: We investigate the anomalous metal arising by hole doping the Mott insulating state of the periodic Anderson model. Using Dynamical Mean-Field Theory we show that, as opposed to the electron-doped case, in the hole-doped regime the hybridization between localized and delocalized orbitals leads to the formation of composite quasi-particles reminiscent of the Zhang-Rice singlets. We compute the cohe… ▽ More We investigate the anomalous metal arising by hole doping the Mott insulating state of the periodic Anderson model. Using Dynamical Mean-Field Theory we show that, as opposed to the electron-doped case, in the hole-doped regime the hybridization between localized and delocalized orbitals leads to the formation of composite quasi-particles reminiscent of the Zhang-Rice singlets. We compute the coherence temperature of this state, showing its exponentially small value at low dopings. As a consequence the weakly-doped Mott state deviates from the predictions of Fermi-liquid theory already at small temperatures. The onset of the Zhang-Rice state and of the consequent poor coherence is due to the electronic structure in which both localized and itinerant carriers have to be involved in the formation of the conduction states and to the proximity to the Mott state. By investigating the magnetic properties of this state, we discuss the relation between the anomalous metallic properties and the behavior of the magnetic degrees of freedom. △ Less

Submitted 14 June, 2012; v1 submitted 21 December, 2011; originally announced December 2011.

Comments: 12 pages, 14 figures

Journal ref: Phys. Rev. B 85, 235110 (2012)

Asymmetric pulsing for reliable operation of titanium/manganite memristors

Authors: F. Gomez-Marlasca, N. Ghenzi, P. Stoliar, M. J. Sánchez, M. J. Rozenberg, G. Leyva, P. Levy

Abstract: We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than $10^{5}$ switching cycles, as well as the de… ▽ More We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than $10^{5}$ switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles. △ Less

Submitted 22 February, 2011; originally announced February 2011.

Comments: 10 pages, 4 figures. To be published in Applied Physics Letters

Unveiling a two-dimensional electron gas with universal subbands at the surface of SrTiO3

Authors: A. F. Santander-Syro, O. Copie, T. Kondo, F. Fortuna, S. Pailhes, R. Weht, X. G. Qiu, F. Bertran, A. Nicolaou, A. Taleb-Ibrahimi, P. Le Fevre, G. Herranz, M. Bibes, Y. Apertet, P. Lecoeur, M. J. Rozenberg, A. Barthelemy

Abstract: Similar to silicon that is the basis of conventional electronics, strontium titanate (SrTiO3) is the bedrock of the emerging field of oxide electronics. SrTiO3 is the preferred template to create exotic two-dimensional (2D) phases of electron matter at oxide interfaces, exhibiting metal-insulator transitions, superconductivity, or large negative magnetoresistance. However, the physical nature of t… ▽ More Similar to silicon that is the basis of conventional electronics, strontium titanate (SrTiO3) is the bedrock of the emerging field of oxide electronics. SrTiO3 is the preferred template to create exotic two-dimensional (2D) phases of electron matter at oxide interfaces, exhibiting metal-insulator transitions, superconductivity, or large negative magnetoresistance. However, the physical nature of the electronic structure underlying these 2D electron gases (2DEGs) remains elusive, although its determination is crucial to understand their remarkable properties. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that there is a highly metallic universal 2DEG at the vacuum-cleaved surface of SrTiO3, independent of bulk carrier densities over more than seven decades, including the undoped insulating material. This 2DEG is confined within a region of ~5 unit cells with a sheet carrier density of ~0.35 electrons per a^2 (a is the cubic lattice parameter). We unveil a remarkable electronic structure consisting on multiple subbands of heavy and light electrons. The similarity of this 2DEG with those reported in SrTiO3-based heterostructures and field-effect transistors suggests that different forms of electron confinement at the surface of SrTiO3 lead to essentially the same 2DEG. Our discovery provides a model system for the study of the electronic structure of 2DEGs in SrTiO3-based devices, and a novel route to generate 2DEGs at surfaces of transition-metal oxides. △ Less

Submitted 17 September, 2010; originally announced September 2010.

Comments: 28 pages, 9 figures

Non-equilibrium electronic transport in a one-dimensional Mott insulator

Authors: F. Heidrich-Meisner, I. Gonzalez, K. A. Al-Hassanieh, A. E. Feiguin, M. J. Rozenberg, E. Dagotto

Abstract: We calculate the non-equilibrium electronic transport properties of a one-dimensional interacting chain at half filling, coupled to non-interacting leads. The interacting chain is initially in a Mott insulator state that is driven out of equilibrium by applying a strong bias voltage between the leads. For bias voltages above a certain threshold we observe the breakdown of the Mott insulator state… ▽ More We calculate the non-equilibrium electronic transport properties of a one-dimensional interacting chain at half filling, coupled to non-interacting leads. The interacting chain is initially in a Mott insulator state that is driven out of equilibrium by applying a strong bias voltage between the leads. For bias voltages above a certain threshold we observe the breakdown of the Mott insulator state and the establishment of a steady-state electronic current through the system. Based on extensive time-dependent density matrix renormalization group simulations, we show that this steady-state current always has the same functional dependence on voltage, independent of the microscopic details of the model and relate the value of the threshold to the Lieb-Wu gap. We frame our results in terms of the Landau-Zener dielectric breakdown picture. Finally, we also discuss the real-time evolution of the current, and characterize the current-carrying state resulting from the breakdown of the Mott insulator by computing the double occupancy, the spin structure factor, and the entanglement entropy. △ Less

Submitted 10 November, 2010; v1 submitted 31 July, 2010; originally announced August 2010.

Comments: 12 pages RevTex4, 12 eps figures, as published, minor revisions

Journal ref: Phys. Rev. B 82, 205110 (2010)

Weak coupling study of decoherence of a qubit in disordered magnetic environments

Authors: E. A. Winograd, M. J. Rozenberg, R. Chitra

Abstract: We study the decoherence of a qubit weakly coupled to frustrated spin baths. We focus on spin-baths described by the classical Ising spin glass and the quantum random transverse Ising model which are known to have complex thermodynamic phase diagrams as a function of an external magnetic field and temperature. Using a combination of numerical and analytical methods, we show that for baths initally… ▽ More We study the decoherence of a qubit weakly coupled to frustrated spin baths. We focus on spin-baths described by the classical Ising spin glass and the quantum random transverse Ising model which are known to have complex thermodynamic phase diagrams as a function of an external magnetic field and temperature. Using a combination of numerical and analytical methods, we show that for baths initally in thermal equilibrium, the resulting decoherence is highly sensitive to the nature of the coupling to the environment and is qualitatively different in different parts of the phase diagram. We find an unexpected strong non-Markovian decay of the coherence when the random transverse Ising model bath is prepared in an initial state characterized by a finite temperature paramagnet. This is contrary to the usual case of exponential decay (Markovian) expected for spin baths in finite temperature paramagnetic phases, thereby illustrating the importance of the underlying non-trivial dynamics of interacting quantum spinbaths. △ Less

Submitted 13 July, 2010; originally announced July 2010.

Comments: 12 pages, 18 figures

Journal ref: Phys. Rev. B 80, 214429 (2009)

Hysteresis Switching Loops in Ag-manganite memristive interfaces

Authors: N. Ghenzi, M. J. Sanchez, F. Gomez-Marlasca, P. Levy, M. J. Rozenberg

Abstract: Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through Hysteresis Switching Loops are found to depend critically on the initial state. The associated vacancy profiles further unvei… ▽ More Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through Hysteresis Switching Loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces. △ Less

Submitted 18 February, 2010; originally announced February 2010.

Comments: 14 pages, 3 figures, to be published in Jour. of Appl. Phys

Mechanism for bipolar resistive switching in transition metal oxides

Authors: M. J. Rozenberg, M. J. Sanchez, R. Weht, C. Acha, F. Gomez-Marlasca, P. Levy

Abstract: We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces, leading to a spatially inhomogeneous oxy… ▽ More We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces, leading to a spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce non-trivial resistance hysteresis experiments that we also report, providing key validation to our model. △ Less

Submitted 5 January, 2010; originally announced January 2010.

Comments: Accepted for publication in Physical Review B, 6 twocolumn pages, 5 figures

Asymmetry between the electron- and hole-doped Mott transition in the periodic Anderson model

Authors: G. Sordi, A. Amaricci, M. J. Rozenberg

Abstract: We study the doping driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron or hole driven transitions is found. The electron doped MIT at larger U is similar to the one found in the single band Hubbard model, with a first order character due to coexistence of solutions. The hole doped MIT, in contrast, is seco… ▽ More We study the doping driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron or hole driven transitions is found. The electron doped MIT at larger U is similar to the one found in the single band Hubbard model, with a first order character due to coexistence of solutions. The hole doped MIT, in contrast, is second order and can be described as the delocalization of Zhang-Rice singlets. △ Less

Submitted 25 June, 2009; originally announced June 2009.

Comments: 18 pages, 19 figures

Journal ref: Phys. Rev. B 80, 035129 (2009) [15 pages]

Dynamical mean field theory of an effective three-band model for Na$_x$CoO$_2$

Authors: A. Bourgeois, A. A. Aligia, M. J Rozenberg

Abstract: We derive an effective Hamiltonian for highly correlated $t_{2g}$ states centered at the Co sites of Na$_x$CoO$_2$. The essential ingredients of the model are an O mediated hopping, a trigonal crystal-field splitting, and on-site effective interactions derived from the exact solution of a multi-orbital model in a CoO$_6$ cluster, with parameters determined previously. The effective model is solv… ▽ More We derive an effective Hamiltonian for highly correlated $t_{2g}$ states centered at the Co sites of Na$_x$CoO$_2$. The essential ingredients of the model are an O mediated hopping, a trigonal crystal-field splitting, and on-site effective interactions derived from the exact solution of a multi-orbital model in a CoO$_6$ cluster, with parameters determined previously. The effective model is solved by dynamical mean-field theory (DMFT). We obtain a Fermi surface (FS) and electronic dispersion that agrees well with angle-resolved photoemission spectra (ARPES). Our results also elucidate the origin of the "sinking-pockets" in different doping regimes. △ Less

Submitted 13 January, 2009; originally announced January 2009.

Journal ref: Phys. Rev. Lett. 102, 066402 (2009)

Mottness scenario for non-Fermi liquid behavior in the periodic Anderson model within Dynamical Mean Field Theory

Authors: A. Amaricci, G. Sordi, M. J. Rozenberg

Abstract: We study the Mott metal-insulator transition in the Periodic Anderson Model within Dynamical Mean Field Theory (DMFT). Near the quantum transition, we find a non-Fermi liquid metallic state down to a vanishing temperature scale. We identify the origin of the non-Fermi liquid behavior as due to magnetic scattering of the doped carriers by the localized moments. The non-Fermi liquid state can be t… ▽ More We study the Mott metal-insulator transition in the Periodic Anderson Model within Dynamical Mean Field Theory (DMFT). Near the quantum transition, we find a non-Fermi liquid metallic state down to a vanishing temperature scale. We identify the origin of the non-Fermi liquid behavior as due to magnetic scattering of the doped carriers by the localized moments. The non-Fermi liquid state can be tuned by either doping or external magnetic field. Our results show that the coupling to spatial magnetic fluctuations (absent in DMFT) is not a prerequisite to realize a non-Fermi liquid scenario for heavy fermion systems. △ Less

Submitted 20 September, 2008; originally announced September 2008.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 101, 146403 (2008) [4 pages]

Metal-Insulator transitions in the periodic Anderson model

Authors: G. Sordi, A. Amaricci, M. J. Rozenberg

Abstract: We solve the Periodic Anderson model in the Mott-Hubbard regime, using Dynamical Mean Field Theory. Upon electron doping of the Mott insulator, a metal-insulator transition occurs which is qualitatively similar to that of the single band Hubbard model, namely with a divergent effective mass and a first order character at finite temperatures. Surprisingly, upon hole doping, the metal-insulator tr… ▽ More We solve the Periodic Anderson model in the Mott-Hubbard regime, using Dynamical Mean Field Theory. Upon electron doping of the Mott insulator, a metal-insulator transition occurs which is qualitatively similar to that of the single band Hubbard model, namely with a divergent effective mass and a first order character at finite temperatures. Surprisingly, upon hole doping, the metal-insulator transition is not first order and does not show a divergent mass. Thus, the transition scenario of the single band Hubbard model is not generic for the Periodic Anderson model, even in the Mott-Hubbard regime. △ Less

Submitted 20 September, 2008; originally announced September 2008.

Comments: 5 pages, 4 figures

Journal ref: Physical Review Letter, 99, 196403 (2007)

Impurity effects in the quantum kagome system ZnCu3(OH)6Cl2

Authors: R. Chitra, M. J. Rozenberg

Abstract: Motivated by the recent experiments on the new spin half Kagome compound ZnCu3(OH)6Cl2, we study a phenomenological model of a frustrated quantum magnet. The model has a spin liquid groundstate and is constructed so as to mimic the macroscopically large quasi-degeneracies expected in the low-lying energy structure of a Kagome system. We use numerical studies of finite size systems to investigate… ▽ More Motivated by the recent experiments on the new spin half Kagome compound ZnCu3(OH)6Cl2, we study a phenomenological model of a frustrated quantum magnet. The model has a spin liquid groundstate and is constructed so as to mimic the macroscopically large quasi-degeneracies expected in the low-lying energy structure of a Kagome system. We use numerical studies of finite size systems to investigate the static as well as the dynamical response at finite temperatures. The results obtained using our simple model are compatible with a large number of recent experiments including neutron scattering data. Our study suggests that many of the anomalous features observed in experiments have a natural interpretation in terms of a spin-1/2 defects (impurities) coupled to an underlying Kagome-type spin liquid. △ Less

Submitted 22 May, 2008; originally announced May 2008.

Comments: text+5figs

Journal ref: PHYSICAL REVIEW B 77, 052407 (2008)

Disorder effects in the quantum kagome antiferromagnet ZnCu3(OH)6Cl2

Authors: M. J. Rozenberg, R. Chitra

Abstract: The recent NMR experiments on ZnCu3(OH)6Cl2 motivate our study of the effect of non- magnetic defects on the antiferromagnetic spin-1/2 kagome lattice. We use exact diagonalization methods to study the effect of two such defects on finite size systems. Our results, obtained without adjustable parameters, are in good quantitative agreement with recent Oxygen 17 NMR data. They provide support for… ▽ More The recent NMR experiments on ZnCu3(OH)6Cl2 motivate our study of the effect of non- magnetic defects on the antiferromagnetic spin-1/2 kagome lattice. We use exact diagonalization methods to study the effect of two such defects on finite size systems. Our results, obtained without adjustable parameters, are in good quantitative agreement with recent Oxygen 17 NMR data. They provide support for the experimental interpretation of the presence of defects within the kagome layers due to Zn/Cu substitutions. Our results also show that disorder effects become relevant at lower temperatures, raising questions about the experimental evidence for the absence of an intrinsic spin gap in the kagome 2D layers. △ Less

Submitted 22 May, 2008; originally announced May 2008.

Comments: 5 pages, 4 figures

Non-volatile resistive switching in dielectric superconductor YBCO

Authors: C. Acha, M. J. Rozenberg

Abstract: We report on the reversible, nonvolatile and polarity dependent resistive switching between superconductor and insulator states at the interfaces of a Au/YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO)/Au system. We show that the superconducting state of YBCO in regions near the electrodes can be reversibly removed and restored. The possible origin of the switching effect may be the migration of oxygen or metalli… ▽ More We report on the reversible, nonvolatile and polarity dependent resistive switching between superconductor and insulator states at the interfaces of a Au/YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO)/Au system. We show that the superconducting state of YBCO in regions near the electrodes can be reversibly removed and restored. The possible origin of the switching effect may be the migration of oxygen or metallic ions along the grain boundaries that control the intergrain superconducting coupling. Four-wire bulk resistance measurements reveal that the migration is not restricted to interfaces and produce significant bulk effects. △ Less

Submitted 11 March, 2008; originally announced March 2008.

Comments: 4 pages, 4 figures, corresponding author: C. Acha ([email protected])

A mechanism for unipolar resistance switching in oxide non-volatile memory devices

Authors: M. J. Sanchez, M. J. Rozenberg, I. H. Inoue

Abstract: Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface are found to play a k… ▽ More Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface are found to play a key role to produce a resistive commutation effect in qualitative agreement with recent experimental reports on binary transition metal oxide based sandwich structures. △ Less

Submitted 20 July, 2007; originally announced July 2007.

Comments: 4 pages, 2 figures

Impurity scattering in strongly correlated metals close to the Mott transition

Authors: Pascal Lederer, Marcelo J. Rozenberg

Abstract: This work explores a simple approximation to describe isolated impurity scattering in a strongly correlated metal. The approximation combines conventional one electron scattering theory and the Dynamic Mean Field Theory to describe strong correlations in the host. It becomes exact in several limits, including those of very weak and very strong impurity potentials. Original electronic structure a… ▽ More This work explores a simple approximation to describe isolated impurity scattering in a strongly correlated metal. The approximation combines conventional one electron scattering theory and the Dynamic Mean Field Theory to describe strong correlations in the host. It becomes exact in several limits, including those of very weak and very strong impurity potentials. Original electronic structure appears at the impurity site when the impurity potential strength is moderate and the host is close to the Mott transition. Our results may provide useful guidance for interpretation of scanning tunneling microscopy experiments in strongly correlated systems. △ Less

Submitted 11 June, 2007; originally announced June 2007.

Comments: 4 figures

Mott transition in the Hubbard model away from particle-hole symmetry

Authors: D. J. Garcia, E. Miranda, K. Hallberg, M. J. Rozenberg

Abstract: We solve the Dynamical Mean Field Theory equations for the Hubbard model away from the particle-hole symmetric case using the Density Matrix Renormalization Group method. We focus our study on the region of strong interactions and finite doping where two solutions coexist. We obtain precise predictions for the boundaries of the coexistence region. In addition, we demonstrate the capabilities of… ▽ More We solve the Dynamical Mean Field Theory equations for the Hubbard model away from the particle-hole symmetric case using the Density Matrix Renormalization Group method. We focus our study on the region of strong interactions and finite doping where two solutions coexist. We obtain precise predictions for the boundaries of the coexistence region. In addition, we demonstrate the capabilities of this precise method by obtaining the frequency dependent optical conductivity spectra. △ Less

Submitted 27 March, 2007; v1 submitted 10 August, 2006; originally announced August 2006.

Comments: 4 pages, 4 figures; updated version

Journal ref: Phys. Rev. B 75, 121102(R) (2007)

Electronic state of a doped Mott-Hubbard insulator at finite temperatures studied using the dynamical mean-field theory

Authors: A. Camjayi, R. Chitra, M. J. Rozenberg

Abstract: We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both antiferromagnetic and paramagnetic phases. In particular, a metallic antiferromagnetic state is obtained with a low frequency Slater-splitted quasiparticle pea… ▽ More We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both antiferromagnetic and paramagnetic phases. In particular, a metallic antiferromagnetic state is obtained with a low frequency Slater-splitted quasiparticle peak coexisting with Hubbard bands. In the high temperature paramagnetic metallic phase, upon reducing doping, the system has a crossover through a ``bad metal'' state characterized by an anomalous shift of the quasiparticle peak away from the Fermi energy. We find that the {\it charge} compressibility of the antiferromagnetic metal is dramatically enhanced upon approaching the second order Néel line. △ Less

Submitted 6 April, 2006; originally announced April 2006.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B 73, 041103(R) (2006)

Quantum Monte Carlo method for models of molecular nanodevices

Authors: Liliana Arrachea, Marcelo J. Rozenberg

Abstract: We introduce a quantum Monte Carlo technique to calculate exactly at finite temperatures the Green function of a fermionic quantum impurity coupled to a bosonic field. While the algorithm is general, we focus on the single impurity Anderson model coupled to a Holstein phonon as a schematic model for a molecular transistor. We compute the density of states at the impurity in a large range of para… ▽ More We introduce a quantum Monte Carlo technique to calculate exactly at finite temperatures the Green function of a fermionic quantum impurity coupled to a bosonic field. While the algorithm is general, we focus on the single impurity Anderson model coupled to a Holstein phonon as a schematic model for a molecular transistor. We compute the density of states at the impurity in a large range of parameters, to demonstrate the accuracy and efficiency of the method. We also obtain the conductance of the impurity model and analyze different regimes. The results show that even in the case when the effective attractive phonon interaction is larger than the Coulomb repulsion, a Kondo-like conductance behavior might be observed. △ Less

Submitted 11 May, 2005; originally announced May 2005.

Comments: 5 pages, 4 figures

Quantum Magnets with Anisotropic Infinite Range Random Interactions

Authors: Liliana Arrachea, Marcelo J. Rozenberg

Abstract: Using exact diagonalization techniques we study the dynamical response of the anisotropic disordered Heisenberg model for systems of S=1/2 spins with infinite range random exchange interactions at temperature T=0. The model can be considered as a generalization, to the quantum case, of the well known Sherrington-Kirkpatrick classical spin-glass model. We also compute and study the behavior of th… ▽ More Using exact diagonalization techniques we study the dynamical response of the anisotropic disordered Heisenberg model for systems of S=1/2 spins with infinite range random exchange interactions at temperature T=0. The model can be considered as a generalization, to the quantum case, of the well known Sherrington-Kirkpatrick classical spin-glass model. We also compute and study the behavior of the Edwards Anderson order parameter and energy per spin as the anisotropy evolves from the Ising to the Heisenberg limits. △ Less

Submitted 22 December, 2004; originally announced December 2004.

Comments: To appear in a special issue of Biophysical Chemistry

Strong electron correlation effects in non-volatile electronic memory devices

Authors: Marcelo J. Rozenberg, Isao H. Inoue, Maria Jose Sanchez

Abstract: We investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a novel switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The obs… ▽ More We investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a novel switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The observed resistance switching phenomenon could be the experimental realisation of a novel type of strongly correlated electron device. △ Less

Submitted 25 June, 2004; originally announced June 2004.

Comments: 4pages, 4 figures

Dynamical Mean Field Theory with the Density Matrix Renormalization Group

Authors: Daniel J. Garcia, Karen Hallberg, Marcelo J. Rozenberg

Abstract: A new numerical method for the solution of the Dynamical Mean Field Theory's self-consistent equations is introduced. The method uses the Density Matrix Renormalization Group technique to solve the associated impurity problem. The new algorithm makes no a priori approximations and is only limited by the number of sites that can be considered. We obtain accurate estimates of the critical values o… ▽ More A new numerical method for the solution of the Dynamical Mean Field Theory's self-consistent equations is introduced. The method uses the Density Matrix Renormalization Group technique to solve the associated impurity problem. The new algorithm makes no a priori approximations and is only limited by the number of sites that can be considered. We obtain accurate estimates of the critical values of the metal-insulator transitions and provide evidence of substructure in the Hubbard bands of the correlated metal. With this algorithm, more complex models having a larger number of degrees of freedom can be considered and finite-size effects can be minimized. △ Less

Submitted 5 March, 2004; originally announced March 2004.

Comments: 5 pages, 4 figures

Melting transition of an Ising glass driven by magnetic field

Authors: L. Arrachea, D. Dalidovich, V. Dobrosavljević, M. J. Rozenberg

Abstract: The quantum critical behavior of the Ising glass in a magnetic field is investigated. We focus on the spin glass to paramagnet transition of the transverse degrees of freedom in the presence of finite longitudinal field. We use two complementary techniques, the Landau theory close to the T=0 transition and the exact diagonalization method for finite systems. This allows us to estimate the size o… ▽ More The quantum critical behavior of the Ising glass in a magnetic field is investigated. We focus on the spin glass to paramagnet transition of the transverse degrees of freedom in the presence of finite longitudinal field. We use two complementary techniques, the Landau theory close to the T=0 transition and the exact diagonalization method for finite systems. This allows us to estimate the size of the critical region and characterize various crossover regimes. An unexpectedly small energy scale on the disordered side of the critical line is found, and its possible relevance to experiments on metallic glasses is briefly discussed. △ Less

Submitted 19 February, 2003; originally announced February 2003.

Comments: 4 pages, 3 figures

Quantum and thermal fluctuations in the SU(N) Heisenberg spin-glass model near the quantum critical point

Authors: A. Camjayi, M. J. Rozenberg

Abstract: We solve for the SU(N) Heisenberg spin-glass in the limit of large N focusing on small S and T. We study the effect of quantum and thermal fluctuations in the frequency dependent response function and observed interesting transfers of spectral weight. We compute the T-dependence of the order parameter and the specific heat and find an unusual T^2 behavior for the latter at low temperatures in th… ▽ More We solve for the SU(N) Heisenberg spin-glass in the limit of large N focusing on small S and T. We study the effect of quantum and thermal fluctuations in the frequency dependent response function and observed interesting transfers of spectral weight. We compute the T-dependence of the order parameter and the specific heat and find an unusual T^2 behavior for the latter at low temperatures in the spin-glass phase. We find a remarkable qualitative agreement with various experiments on the quantum frustrated magnet SrCr_{9p}Ga_{12-9p}O_{19}. △ Less

Submitted 18 October, 2002; originally announced October 2002.

Comments: 5 pages, 4 figures, submitted to Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 90, 217202 (2003)

The infinite-range quantum random Heisenberg magnet

Authors: L. Arrachea, M. J. Rozenberg

Abstract: We study with exact diagonalization techniques the Heisenberg model for a system of SU(2) spins with S=1/2 and random infinite-range exchange interactions. We calculate the critical temperature T_g for the spin-glass to paramagnetic transition. We obtain T_g ~ 0.13, in good agreement with previous quantum Monte Carlo and analytical estimates. We provide a detailed picture for the different kind… ▽ More We study with exact diagonalization techniques the Heisenberg model for a system of SU(2) spins with S=1/2 and random infinite-range exchange interactions. We calculate the critical temperature T_g for the spin-glass to paramagnetic transition. We obtain T_g ~ 0.13, in good agreement with previous quantum Monte Carlo and analytical estimates. We provide a detailed picture for the different kind of excitations which intervene in the dynamical response chi''(w,T) at T=0 and analyze their evolution as T increases. We also calculate the specific heat Cv(T). We find that it displays a smooth maximum at TM ~ 0.25, in good qualitative agreement with experiments. We argue that the fact that TM>Tg is due to a quantum disorder effect. △ Less

Submitted 26 March, 2002; originally announced March 2002.

Comments: 17 pages, 14 figures