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Quantum dots with split enhancement gate tunnel barrier control
Abstract: We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attai… ▽ More
Submitted 5 March, 2019; v1 submitted 12 July, 2017; originally announced July 2017.
Comments: v1: 11 pages, 3 extended data tables, 1 extended data figure, v2: 5 pages, 3 figures, 5 pages supplementary material, 3 extended data tables, 2 extended data figures. Reorganization of the paper structure, modification of the title, abstract and introduction and conclusion, no change to the results and main text figures
Journal ref: Appl. Phys. Lett. 114, 083101 (2019)