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Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments
Authors:
F. Kail,
J. Farjas,
P. Roura,
C. Secouard,
O. Nos,
J. Bertomeu,
F. Alzina,
P. Roca i Cabarrocas
Abstract:
The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analysed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain, but it reveals a derelaxation of the bond angle stra…
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The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analysed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain, but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon.
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Submitted 8 July, 2010;
originally announced July 2010.
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Structural Relaxation Kinetics for First and Second-Order Processes: Application to Pure Amorphous Silicon
Authors:
Pere Roura,
Jordi Farjas
Abstract:
The structural relaxation of amorphous materials is described as arising from the superposition of elementary processes with varying activation energies. We show that it is possible to obtain the kinetic parameters of these processes from differential scanning calorimetry experiments. The transformation rate is predicted for the transient decay when an isotherm is reached and for the relaxation…
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The structural relaxation of amorphous materials is described as arising from the superposition of elementary processes with varying activation energies. We show that it is possible to obtain the kinetic parameters of these processes from differential scanning calorimetry experiments. The transformation rate is predicted for the transient decay when an isotherm is reached and for the relaxation threshold detected in partially relaxed samples. Good agreement is obtained with experiment if the individual components transform through first-order kinetics, but inconsistencies arise for second-order components. Our analysis, that improves the classical treatment by Gibbs et al.[1], allows the activation energies and the pre-exponential rate constants to be extracted independently. When applied to a-Si, we conclude that the pre-exponential rate constant is far from constant. The kinetic parameters obtained from DSC are used to analyze the relaxation of a-Si in pulsed laser experiments and to discuss the relationship between structural relaxation and crystallization.
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Submitted 16 January, 2009;
originally announced January 2009.
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Si3N4 single-crystal nanowires grown from silicon micro and nanoparticles near the threshold of passive oxidation
Authors:
J. Farjas,
C. Rath,
A. Pinyol,
P. Roura,
E. Bertran
Abstract:
A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any s…
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A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions.
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Submitted 21 November, 2008;
originally announced November 2008.
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Kinetic study of the oxide-assisted catalyst-free synthesis of silicon nitride nanowires
Authors:
J. Farjas,
A. Pinyol,
Chandana Rath,
P. Roura,
E. Bertran
Abstract:
The synthesis of Si3N4 nanowires from the reaction of silicon nanoparticles with N2 in the 1200-1440 C temperature range is reported. The nitridation conditions are such that the reaction with nitrogen is favoured by the presence of silicon oxide in the particles and by the active oxidation of silicon without a catalyst. It is shown that the Si to Si3N4 conversion rate depends on the amount of s…
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The synthesis of Si3N4 nanowires from the reaction of silicon nanoparticles with N2 in the 1200-1440 C temperature range is reported. The nitridation conditions are such that the reaction with nitrogen is favoured by the presence of silicon oxide in the particles and by the active oxidation of silicon without a catalyst. It is shown that the Si to Si3N4 conversion rate depends on the amount of silicon particles used in the experiments and that, in general, the reaction slows down for greater amounts. This trend is explained by particle stacking, which restricts the exchange of gases between the furnace atmosphere and the atmosphere around the inner particles. In a first stage, local oxygen partial pressure increases around the inner particles and inhibits nitridation locally. If the amount of reactant Si nanoparticles is small enough, this extrinsic effect is avoided and the intrinsic nitridation kinetics can be measured. Experiments show that intrinsic kinetics does not depend on temperature.
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Submitted 21 November, 2008;
originally announced November 2008.
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Numerical model of solid phase transformations governed by nucleation and growth. Microstructure development during isothermal crystallization
Authors:
J. Farjas,
P. Roura
Abstract:
A simple numerical model which calculates the kinetics of crystallization involving randomly distributed nucleation and isotropic growth is presented. The model can be applied to different thermal histories and no restrictions are imposed on the time and the temperature dependencies of the nucleation and growth rates. We also develop an algorithm which evaluates the corresponding emerging grain…
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A simple numerical model which calculates the kinetics of crystallization involving randomly distributed nucleation and isotropic growth is presented. The model can be applied to different thermal histories and no restrictions are imposed on the time and the temperature dependencies of the nucleation and growth rates. We also develop an algorithm which evaluates the corresponding emerging grain size distribution. The algorithm is easy to implement and particularly flexible making it possible to simulate several experimental conditions. Its simplicity and minimal computer requirements allow high accuracy for two- and three-dimensional growth simulations. The algorithm is applied to explore the grain morphology development during isothermal treatments for several nucleation regimes. In particular, thermal nucleation, pre-existing nuclei and the combination of both nucleation mechanisms are analyzed. For the first two cases, the universal grain size distribution is obtained. The high accuracy of the model is stated from its comparison to analytical predictions. Finally, the validity of the Kolmogorov-Johnson-Mehl-Avrami model is verified for all the cases studied.
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Submitted 14 November, 2008;
originally announced November 2008.
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Solid phase crystallization under continuous heating: kinetic and microstructure scaling laws
Authors:
J. Farjas,
P. Roura
Abstract:
The kinetics and microstructure of solid-phase crystallization under continuous heating conditions and random distribution of nuclei are analyzed. An Arrhenius temperature dependence is assumed for both nucleation and growth rates. Under these circumstances, the system has a scaling law such that the behavior of the scaled system is independent of the heating rate. Hence, the kinetics and micros…
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The kinetics and microstructure of solid-phase crystallization under continuous heating conditions and random distribution of nuclei are analyzed. An Arrhenius temperature dependence is assumed for both nucleation and growth rates. Under these circumstances, the system has a scaling law such that the behavior of the scaled system is independent of the heating rate. Hence, the kinetics and microstructure obtained at different heating rates differ only in time and length scaling factors.Concerning the kinetics, it is shown that the extended volume evolves with time according to alpha_ex=[exp(kappa Ct)]^m+1, where t' is the dimensionless time. This scaled solution not only represents a significant simplification of the system description, it also provides new tools for its analysis. For instance, it has been possible to find an analytical dependence of the final average grain size on kinetic parameters. Concerning the microstructure, the existence of a length scaling factor has allowed the grain-size distribution to be numerically calculated as a function of the kinetic parameters.
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Submitted 14 November, 2008;
originally announced November 2008.
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Simple approximate analytical solution for non-isothermal single-step transformations: kinetic analysis
Authors:
Jordi Farjas,
Pere Roura
Abstract:
In this paper, we develop a method for obtaining the approximate solution for the evolution of single-step transformations under non-isothermal conditions. We have applied it to many reaction models and obtained very simple analytical expressions for the shape of the corresponding transformation rate peaks. These analytical solutions represent a significant simplification of the system's descrip…
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In this paper, we develop a method for obtaining the approximate solution for the evolution of single-step transformations under non-isothermal conditions. We have applied it to many reaction models and obtained very simple analytical expressions for the shape of the corresponding transformation rate peaks. These analytical solutions represent a significant simplification of the system's description allowing easy curve fitting to experiment. A remarkable property is that the evolutions of the transformed fraction obtained at different heating rates are identical when time is scaled by a time constant. The accuracy achieved with our method is checked against several reaction models and different temperature dependencies of the transformation rate constant. It is shown that its accuracy is closely related with that of the Kissinger method.
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Submitted 10 November, 2008;
originally announced November 2008.
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Modification of the Kolmogorov-Johnson-Mehl-Avrami rate equation for non-isothermal experiments and its analytical solution
Authors:
Jordi Farjas,
Pere Roura
Abstract:
Avrami's model describes the kinetics of phase transformation under the assumption of spatially random nucleation. In this paper we provide a quasi-exact analytical solution of Avrami's model when the transformation takes place under continuous heating. This solution has been obtained with different activation energies for both nucleation and growth rates. The relation obtained is also a solutio…
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Avrami's model describes the kinetics of phase transformation under the assumption of spatially random nucleation. In this paper we provide a quasi-exact analytical solution of Avrami's model when the transformation takes place under continuous heating. This solution has been obtained with different activation energies for both nucleation and growth rates. The relation obtained is also a solution of the so-called Kolmogorov-Johnson-Mehl-Avrami transformation rate equation. The corresponding non-isothermal Kolmogorov-Johnson-Mehl-Avrami transformation rate equation only differs from the one obtained under isothermal conditions by a constant parameter, which only depends on the ratio between nucleation and growth rate activation energies. Consequently, a minor correction allows us to extend the Kolmogorov-Johnson-Mehl-Avrami transformation rate equation to continuous heating conditions.
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Submitted 10 November, 2008;
originally announced November 2008.
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Cell size distribution in a random tessellation of space governed by the Kolmogorov-Johnson-Mehl-Avrami model: Grain size distribution in crystallization
Authors:
Jordi Farjas,
Pere Roura
Abstract:
The space subdivision in cells resulting from a process of random nucleation and growth is a subject of interest in many scientific fields. In this paper, we deduce the expected value and variance of these distributions while assuming that the space subdivision process is in accordance with the premises of the Kolmogorov-Johnson-Mehl-Avrami model. We have not imposed restrictions on the time dep…
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The space subdivision in cells resulting from a process of random nucleation and growth is a subject of interest in many scientific fields. In this paper, we deduce the expected value and variance of these distributions while assuming that the space subdivision process is in accordance with the premises of the Kolmogorov-Johnson-Mehl-Avrami model. We have not imposed restrictions on the time dependency of nucleation and growth rates. We have also developed an approximate analytical cell size probability density function. Finally, we have applied our approach to the distributions resulting from solid phase crystallization under isochronal heating conditions.
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Submitted 15 October, 2008;
originally announced October 2008.
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Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon
Authors:
P. Roura,
J. Farjas,
P. Roca i Cabarrocas
Abstract:
A thorough critical analysis of the theoretical relationships between the bond-angle dispersion in a-Si and the width of the transverse optical (TO) Raman peak is presented. It is shown that the discrepancies between them are drastically reduced when unified definitions for these magnitudes are used. This reduced dispersion in the predicted values of the bond-angle dispersion together with the b…
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A thorough critical analysis of the theoretical relationships between the bond-angle dispersion in a-Si and the width of the transverse optical (TO) Raman peak is presented. It is shown that the discrepancies between them are drastically reduced when unified definitions for these magnitudes are used. This reduced dispersion in the predicted values of the bond-angle dispersion together with the broad agreement with its scarce direct determinations is then used to analyze the strain energy in partially relaxed pure a-Si. It is concluded that defect annihilation does not contribute appreciably to reducing the a-Si energy during structural relaxation. In contrast, it can account for half of the crystallization energy, which can be as low as 7 kJ/mol in defect-free a-Si.
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Submitted 8 September, 2008;
originally announced September 2008.
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Bernoulli correction to viscous losses. Radial flow between two parallel discs
Authors:
Jordi Armengol,
Josep Calbo,
Toni Pujol,
Pere Roura
Abstract:
For a massless fluid (density = 0), the steady flow along a duct is governed exclusively by viscous losses. In this paper, we show that the velocity profile obtained in this limit can be used to calculate the pressure drop up to the first order in density. This method has been applied to the particular case of a duct, defined by two plane-parallel discs. For this case, the first-order approximat…
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For a massless fluid (density = 0), the steady flow along a duct is governed exclusively by viscous losses. In this paper, we show that the velocity profile obtained in this limit can be used to calculate the pressure drop up to the first order in density. This method has been applied to the particular case of a duct, defined by two plane-parallel discs. For this case, the first-order approximation results in a simple analytical solution which has been favorably checked against numerical simulations. Finally, an experiment has been carried out with water flowing between the discs. The experimental results show good agreement with the approximate solution.
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Submitted 8 September, 2008;
originally announced September 2008.
