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Charge spill-out and work function of few-layer graphene on SiC(0001)
Authors:
O. Renault,
A. M. Pascon,
H. Rotella,
K. Kaja,
C. Mathieu,
J. E. Rault,
P. Blaise,
T. Poiroux,
N. Barrett,
L. R. C. Fonseca
Abstract:
We report on the charge spill-out and work function of epitaxial few-layer graphene on 6H-SiC(0001). Experiments from high-resolution, energy-filtered X-ray photoelectron emission microscopy (XPEEM) are combined with ab initio Density Functional Theory calculations using a relaxed interface model. Work function values obtained from theory and experiments are in qualitative agreement, reproducing t…
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We report on the charge spill-out and work function of epitaxial few-layer graphene on 6H-SiC(0001). Experiments from high-resolution, energy-filtered X-ray photoelectron emission microscopy (XPEEM) are combined with ab initio Density Functional Theory calculations using a relaxed interface model. Work function values obtained from theory and experiments are in qualitative agreement, reproducing the previously observed trend of increasing work function with each additional graphene plane. Electrons transfer at the SiC/graphene interface through a buffer layer causes an interface dipole moment which is at the origin of the graphene work function modulation. The total charge transfer is independent of the number of graphene layers, and is consistent with the constant binding energy of the SiC component of the C 1s core-level measured by XPEEM. Charge leakage into vacuum depends on the number of graphene layers explaining why the experimental, layer-dependent C 1s-graphene core-level binding energy shift does not rigidly follow that of the work function. Thus, a combination of charge transfer at the SiC/graphene interface and charge spill-out into vacuum resolves the apparent discrepancy between the experimental work function and C1s binding energy.
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Submitted 13 June, 2018;
originally announced June 2018.
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Kondo effect goes anisotropic in vanadate oxide superlattices
Authors:
Hélène Rotella,
Alain Pautrat,
Olivier Copie,
Philippe Boullay,
Adrian David,
Bernard Mercey,
Magali Morales,
Wilfrid Prellier
Abstract:
We study the transport properties in SrVO3/LaVO3 (SVO/LVO) superlattices deposited on SrTiO3 (STO) substrates. We show that the electronic conduction occurs in the metallic LVO layers with a galvanomagnetism typical of a 2D Fermi surface. In addition, a Kondo-like component appears in both the thermal variation of resistivity and the magnetoresistance. Surprisingly, in this system where the STO in…
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We study the transport properties in SrVO3/LaVO3 (SVO/LVO) superlattices deposited on SrTiO3 (STO) substrates. We show that the electronic conduction occurs in the metallic LVO layers with a galvanomagnetism typical of a 2D Fermi surface. In addition, a Kondo-like component appears in both the thermal variation of resistivity and the magnetoresistance. Surprisingly, in this system where the STO interface does not contribute to the measured conduction, the Kondo correction is strongly anisotropic. We show that the growth temperature allows a direct control of this contribution. Finally, the key role of vanadium mixed valency stabilized by oxygen vacancies is enlightened.
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Submitted 8 September, 2015;
originally announced September 2015.
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Two components for one resistivity in LaVO3/SrTiO3 heterostructures
Authors:
Helene Rotella,
Olivier Copie,
Alain Pautrat,
Philippe Boullay,
Adrian David,
Christophe Labbe,
Cedric Frilay,
Denis Pelloquin,
Wilfrid Prellier
Abstract:
A series of 100 nm LaVO3 thin films have been synthesized on (001)-oriented SrTiO3 substrates using the pulsed laser deposition technique, and the effects of growth temperature are analyzed. Transport properties reveal a large electronic mobility and a non-linear Hall effect at low temperature. In addition, a cross-over from a semiconducting state at high-temperature to a metallic state at low-tem…
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A series of 100 nm LaVO3 thin films have been synthesized on (001)-oriented SrTiO3 substrates using the pulsed laser deposition technique, and the effects of growth temperature are analyzed. Transport properties reveal a large electronic mobility and a non-linear Hall effect at low temperature. In addition, a cross-over from a semiconducting state at high-temperature to a metallic state at low-temperature is observed, with a clear enhancement of the metallic character as the growth temperature increases. Optical absorption measurements combined with the two-bands analysis of the Hall effect show that the metallicity is induced by the diffusion of oxygen vacancies in the SrTiO3 substrate. These results allow to understand that the film/substrate heterostructure behaves as an original semiconducting-metallic parallel resistor, and electronic transport properties are consistently explained.
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Submitted 29 January, 2015; v1 submitted 29 March, 2014;
originally announced March 2014.
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Structural characterization of PrVO3 epitaxial thin films
Authors:
O. Copie,
H. Rotella,
P. Boullay,
M. Morales,
A. Pautrat,
A David,
B. Mercey,
D. Pravarthana,
I. C. Infante,
P. -E. Janolin,
W. Prellier
Abstract:
Rare earth perovskite oxides constitute a wide family of materials presenting functional proper- ties strongly coupled to their crystalline structure. Here, we report on the experimental results on epitaxial PrVO3 deposited on SrTiO3 single crystal substrates by pulsed laser deposition. By com- bining advanced structural characterization tools, we have observed that the PVO unrelaxed film structur…
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Rare earth perovskite oxides constitute a wide family of materials presenting functional proper- ties strongly coupled to their crystalline structure. Here, we report on the experimental results on epitaxial PrVO3 deposited on SrTiO3 single crystal substrates by pulsed laser deposition. By com- bining advanced structural characterization tools, we have observed that the PVO unrelaxed film structure grown on STO, is characterized by two kinds of oriented domains whose epitaxial relations are: (i) PrVO3[110]o//SrTiO3[001]c and PrVO3[001]o//SrTiO3[100]c, (ii) PrVO3[110]o//SrTiO3[001]c and PrVO3[001]o//SrTiO3[010]c. We have also measured reciprocal space maps. From these results, we have determined that the PVO film epitaxy on STO imposes a lowering of the PVO structure symmetry from orthorhombic (Pbnm) to monoclinic (P21/m). We show, the nominal strain induced by the substrate being constant, that the obtained film structure depends on both growth oxygen and temperature. Thus, by finely controlling the deposition conditions, we could tune the strain experienced by PrVO3 thin film. These results show an alternative to substrate mismatch as a path to control the strain and structure of PVO films.
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Submitted 28 March, 2014;
originally announced March 2014.
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Structural analysis of strained LaVO$_3$ thin films
Authors:
H. Rotella,
O. Copie,
G. Mouillard-Steciuk,
H. Ouerdane,
P. Boullay,
P. Roussel,
M. Morales,
A. David,
A. Pautrat,
B. Mercey,
L. Lutterotti,
D. Chateigner,
W. Prellier
Abstract:
While structure refinement is routinely achieved for simple bulk materials, the accurate structural determination still poses challenges for thin films due on the one hand to the small amount of material deposited on the thicker substrate and, on the other hand, to the intricate epitaxial relationships that substantially complicate standard X-ray diffraction analysis. Using a combined approach, we…
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While structure refinement is routinely achieved for simple bulk materials, the accurate structural determination still poses challenges for thin films due on the one hand to the small amount of material deposited on the thicker substrate and, on the other hand, to the intricate epitaxial relationships that substantially complicate standard X-ray diffraction analysis. Using a combined approach, we analyze the crystal structure of epitaxial LaVO$_3$ thin films grown on (100)-oriented SrTiO$_3$. Transmission electron microscopy study reveals that the thin films are epitaxially grown on SrTiO$_3$ and points to the presence of 90$^{\circ}$ oriented domains. The mapping of the reciprocal space obtained by high resolution X-ray diffraction permits refinement of the lattice parameters. We finally deduce that strain accommodation imposes a monoclinic structure onto the LaVO$_3$ film. The reciprocal space maps are numerically processed and the extracted data computed to refine the atomic positions, which are compared to those obtained using precession electron diffraction tomography. We discuss the obtained results and our methodological approach as a promising thin film structure determination for complex systems.
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Submitted 7 July, 2014; v1 submitted 28 March, 2014;
originally announced March 2014.
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Mapping electronic reconstruction at the metal/insulator interfaces in \ce{LaVO_3/SrVO_3} heterostructures
Authors:
Haiyan Tan,
Ricardo Egoavil,
Armand Béché,
Gerardo T Martinez,
Sandra Van Aert,
Jo Verbeeck,
Gustaaf Van Tendeloo,
Hélène Rotella,
Philippe Boullay,
Alain Pautrat,
Wilfrid Prellier
Abstract:
A \ce{(LaVO_3)_6/(SrVO_3)_3} superlattice is studied with a combination of sub-Å resolved scanning transmission electron microscopy and monochromated electron energy-loss spectroscopy. The V oxidation state is mapped with atomic spatial resolution enabling to investigate electronic reconstruction at the \ce{LaVO_3}/\ce{SrVO_3} interfaces. Surprisingly, asymmetric charge distribution is found at ad…
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A \ce{(LaVO_3)_6/(SrVO_3)_3} superlattice is studied with a combination of sub-Å resolved scanning transmission electron microscopy and monochromated electron energy-loss spectroscopy. The V oxidation state is mapped with atomic spatial resolution enabling to investigate electronic reconstruction at the \ce{LaVO_3}/\ce{SrVO_3} interfaces. Surprisingly, asymmetric charge distribution is found at adjacent chemically symmetric interfaces. The local structure is proposed and simulated with double channeling calculation which agrees qualitatively with our experiment. We demonstrate that local strain asymmetry is the likely cause of the electronic asymmetry of the interfaces. The electronic reconstruction at the interfaces extends much further than the chemical composition, varying from 0.5 to 1.2 nm. This distance corresponds to the length of charge transfer previously found in the \ce{(LaVO_3)_m}/\ce{(SrVO_3)_n} metal/insulating and the \ce{(LaAlO_3)_m}/\ce{(SrTiO_3)_n} insulating/insulating interfaces.
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Submitted 3 October, 2013;
originally announced October 2013.
