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Photoluminescence efficiency of MBE-grown MoSe$_2$ monolayers featuring sharp excitonic lines and diverse grain structures
Authors:
Mateusz Raczyński,
Julia Kucharek,
Kacper Oreszczuk,
Aleksander Rodek,
Tomasz Kazimierczuk,
Rafał Bożek,
Takashi Taniguchi,
Kenji Watanabe,
Wojciech Pacuski,
Piotr Kossacki
Abstract:
Recent studies have demonstrated that using h-BN as a substrate for the growth of transition metal dichalcogenides can significantly reduce excitonic linewidths. However, many other optical parameters still require optimization. In this work, we present a detailed study of the low-temperature photoluminescence efficiency of MBE-grown MoSe$_2$ monolayers on h-BN substrates, comparing them to state-…
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Recent studies have demonstrated that using h-BN as a substrate for the growth of transition metal dichalcogenides can significantly reduce excitonic linewidths. However, many other optical parameters still require optimization. In this work, we present a detailed study of the low-temperature photoluminescence efficiency of MBE-grown MoSe$_2$ monolayers on h-BN substrates, comparing them to state-of-the-art exfoliated monolayers encapsulated in h-BN. We demonstrate that a quantitative comparison between samples requires accounting for interference effects and Purcell enhancement or suppression of the emission. By accounting for these effects in both photoluminescence and Raman signals, we show that the overall intrinsic luminescence efficiency is proportional to the sample coverage. Consequently, we find that exciton diffusion and edge effects are negligible in spectroscopy of MBE-grown samples, even for nanometer-sized crystals.
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Submitted 24 February, 2025;
originally announced February 2025.
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Hybrid electroluminescence device for on-demand single photon generation at room temperature
Authors:
Aleksander Rodek,
Mateusz Hajdel,
Kacper Oreszczuk,
Anna Kafar,
Muhammed Aktas,
Lucja Marona,
Marek Potemski,
Czeslaw Skierbiszewski,
Piotr Kossacki
Abstract:
Recent research focused on single photon emitters (SPEs) hosted by layered semiconductors, particularly hexagonal boron nitride (hBN), has revealed a promising alternative to quantum dots (QDs) for generating single, indistinguishable photons. hBN-based SPEs offer lower material costs, room temperature emission, and easy integration into potential optoelectronic devices due to the layered structur…
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Recent research focused on single photon emitters (SPEs) hosted by layered semiconductors, particularly hexagonal boron nitride (hBN), has revealed a promising alternative to quantum dots (QDs) for generating single, indistinguishable photons. hBN-based SPEs offer lower material costs, room temperature emission, and easy integration into potential optoelectronic devices due to the layered structure of the host crystal. This work presents compact hybrid electroluminescence devices, in which GaN laser diodes (LDs) are used for bottom-to-top excitation of hBN nanoflakes deposited on the laser facets. Our approach circumvents the issue of electroluminescence generation from hBN and provides access to the SPE's signal without optical driving by an external laser. Using laser diodes upgraded with Bragg reflectors a room-temperature generation of single photons from hBN is confirmed by an 80%-dip in their g(2) second-order correlation. The on-demand emission of single photons at room temperature is demonstrated by driving the laser diodes in pulsed operation, with confidence supported by a measured g(2)(0) value of 0.37.
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Submitted 5 August, 2024; v1 submitted 1 August, 2024;
originally announced August 2024.
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Enhancement of electron magnetic susceptibility due to many-body interactions in monolayer MoSe$_2$
Authors:
K. Oreszczuk,
A. Rodek,
M. Goryca,
T. Kazimierczuk,
M. Raczynski,
J. Howarth,
T. Taniguchi,
K. Watanabe,
M. Potemski,
P. Kossacki
Abstract:
Employing the original, all-optical method, we quantify the magnetic susceptibility of a two-dimensional electron gas (2DEG) confined in the MoSe$_2$ monolayer in the range of low and moderate carrier densities. The impact of electron-electron interactions on the 2DEG magnetic susceptibility is found to be particularly strong in the limit of, studied in detail, low carrier densities. Following the…
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Employing the original, all-optical method, we quantify the magnetic susceptibility of a two-dimensional electron gas (2DEG) confined in the MoSe$_2$ monolayer in the range of low and moderate carrier densities. The impact of electron-electron interactions on the 2DEG magnetic susceptibility is found to be particularly strong in the limit of, studied in detail, low carrier densities. Following the existing models, we derive the value of $g_0 = 2.5 \pm 0.4$ for the bare (in the absence of the interaction effects) $g$-factor of the ground state electronic band in the MoSe$_2$ monolayer. The derived value of this parameter is discussed in the context of estimations from other experimental approaches. Surprisingly, the conclusions drawn differ from theoretical ab-initio studies.
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Submitted 22 July, 2023; v1 submitted 2 May, 2023;
originally announced May 2023.
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Controlled coherent-coupling and dynamics of exciton complexes in a MoSe$_2$ monolayer
Authors:
Aleksander Rodek,
Thilo Hahn,
James Howarth,
Takashi Taniguchi,
Kenji Watanabe,
Marek Potemski,
Piotr Kossacki,
Daniel Wigger,
Jacek Kasprzak
Abstract:
Quantifying and controlling the coherent dynamics and couplings of optically active excitations in solids is of paramount importance in fundamental research in condensed matter optics and for their prospective optoelectronic applications in quantum technologies. Here, we perform ultrafast coherent nonlinear spectroscopy of a charge-tunable MoSe$_2$ monolayer. The experiments show that the homogene…
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Quantifying and controlling the coherent dynamics and couplings of optically active excitations in solids is of paramount importance in fundamental research in condensed matter optics and for their prospective optoelectronic applications in quantum technologies. Here, we perform ultrafast coherent nonlinear spectroscopy of a charge-tunable MoSe$_2$ monolayer. The experiments show that the homogeneous and inhomogeneous line width and the population decay of exciton complexes hosted by this material can be directly tuned by an applied gate bias, which governs the Fermi level and therefore the free carrier density. By performing two-dimensional spectroscopy, we also show that the same bias-tuning approach permits us to control the coherent coupling strength between charged and neutral exciton complexes.
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Submitted 25 February, 2023;
originally announced February 2023.
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Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides
Authors:
K. Oreszczuk,
J. Slawinska,
A. Rodek,
M. Potemski,
C. Skierbiszewski,
P. Kossacki
Abstract:
We demonstrate a novel electro-luminescence device in which GaN-based $μ$-LEDs are used to trigger the emission spectra of monolayers of transition metal dichalcogenides, which are deposited directly on the $μ$-LED surface. A special $μ$-LED design enables the operation of our structures even in the limit of low temperatures. A device equipped with a selected WSe$_2$ monolayer flake is shown to ac…
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We demonstrate a novel electro-luminescence device in which GaN-based $μ$-LEDs are used to trigger the emission spectra of monolayers of transition metal dichalcogenides, which are deposited directly on the $μ$-LED surface. A special $μ$-LED design enables the operation of our structures even in the limit of low temperatures. A device equipped with a selected WSe$_2$ monolayer flake is shown to act as a stand-alone, electrically-driven single-photon source.
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Submitted 26 June, 2022; v1 submitted 8 June, 2022;
originally announced June 2022.
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Local field effects in ultrafast light-matter interaction measured by pump-probe spectroscopy of monolayer MoSe$_{\boldsymbol 2}$
Authors:
Aleksander Rodek,
Thilo Hahn,
Jacek Kasprzak,
Tomasz Kazimierczuk,
Karol Nogajewski,
Karolina Połczyńska,
Kenji Watanabe,
Takashi Taniguchi,
Tilmann Kuhn,
Paweł Machnikowski,
Marek Potemski,
Daniel Wigger,
Piotr Kossacki
Abstract:
Using a novel approach to ultrafast resonant pump-probe spectroscopy we investigate the spectral shape and dynamics of absorption features related to the A exciton in an hBN/MoSe$_2$/hBN van der Waals heterostructure. While in a pure two-level system a pump-probe experiment measures the occupation or the polarization dynamics, depending on the time ordering of the pulse pair, in the transition met…
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Using a novel approach to ultrafast resonant pump-probe spectroscopy we investigate the spectral shape and dynamics of absorption features related to the A exciton in an hBN/MoSe$_2$/hBN van der Waals heterostructure. While in a pure two-level system a pump-probe experiment measures the occupation or the polarization dynamics, depending on the time ordering of the pulse pair, in the transition metal dichalcogenide (TMD) system both quantities get thoroughly mixed by strong exciton-exciton interaction. We find that for short positive delays the spectral lines experience pronounced changes in their shape and energy and they relax to the original situation on a picosecond time scale. For negative delays distinctive spectral oscillations appear indicating the first-time observation of perturbed free induction decay for a TMD system. The comparison between co-circular and cross-circular excitation schemes further allows us to investigate the rapid inter-valley scattering. By considering a three-level system as a minimal model including the local field effect, excitation induced dephasing and scattering between the excited states we explain all phenomena observed in the experiment with excellent consistency. Our handy model can be even further reduced to two levels in the case of a co-circular excitation, for which we derive analytic expressions to describe the detected signals. This allows us to trace back the spectral shapes and shifts to the impact of local field effect and excitation induced dephasing thus fully reproducing the complex behavior of the observed effects.
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Submitted 22 August, 2021; v1 submitted 9 March, 2021;
originally announced March 2021.
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Readout of a dopant spin in the anisotropic quantum dot with a single magnetic ion
Authors:
Aleksander Rodek,
Tomasz Kazimierczuk,
Aleksander Bogucki,
Tomasz Smoleński,
Wojciech Pacuski,
Piotr Kossacki
Abstract:
Owing to exchange interaction between the exciton and magnetic ion, a quantum dot embedding a single magnetic ion is a great platform for optical control of individual spin. In particular, a quantum dot provides strong and sharp optical transitions, which give experimental access to spin states of an individual magnetic ion. We show, however, that physics of quantum dot excitons also complicate sp…
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Owing to exchange interaction between the exciton and magnetic ion, a quantum dot embedding a single magnetic ion is a great platform for optical control of individual spin. In particular, a quantum dot provides strong and sharp optical transitions, which give experimental access to spin states of an individual magnetic ion. We show, however, that physics of quantum dot excitons also complicate spin readout and optical spin manipulation in such a system. This is due to electron-hole exchange interaction in anisotropic quantum dots, which affects the polarization of the emission lines. One of the consequences is that the intensity of spectral lines in a single spectrum are not simply proportional to the population of various spin states of magnetic ion. In order to provide a solution of the above problem, we present a method of extracting both the spin polarisation degree of a neutral exciton and magnetic dopant inside a semiconductor quantum dot in an external magnetic field. Our approach is experimentally verified on a system of CdSe/ZnSe quantum dot containing a single Fe$^{2+}$ ion. Both the resonant and non-resonant excitation regimes are explored resulting in a record high optical orientation efficiency of dopant spin in the former case. The proposed solutions can be easily expanded to any other system of quantum dots containing magnetic dopants.
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Submitted 7 March, 2019;
originally announced March 2019.