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Differentiating Confined from Adsorbed Water in Single-Walled Carbon Nanotubes via Electronic Transport
Authors:
Said Pashayev,
Romain Lhermerout,
Christophe Roblin,
Eric Alibert,
Remi Jelinek,
Nicolas Izard,
Rasim Jabbarov,
Francois Henn,
Adrien Noury
Abstract:
In this article, we show that it is possible to differentiate between water adsorbed on the outside of a single-walled carbon nanotube and that confined inside. To this aim, we measured the electronic transport of a carbon nanotube based field effect transistor (CNTFET) constructed with an isolated single carbon nanotube subjected to controlled environments. More precisely, this distinction is mad…
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In this article, we show that it is possible to differentiate between water adsorbed on the outside of a single-walled carbon nanotube and that confined inside. To this aim, we measured the electronic transport of a carbon nanotube based field effect transistor (CNTFET) constructed with an isolated single carbon nanotube subjected to controlled environments. More precisely, this distinction is made possible by observing the evolution of the transfer characteristic as a function of the electric field imposed by the gate voltage. It appears that the presence of water results in a displacement of the electrical neutrality point, corresponding to a charge transfer between the nanotube and its environment. Using this approach, we demonstrate the existence of 3 types of water molecules: (i) chemically adsorbed on the SiO\textsubscript{2} surface of the substrate, i.e., forming silanol groups; (ii) physically adsorbed outside next to the nanotube; and (iii) confined inside the nanotube. The first one can only be eliminated by high temperature treatment under vacuum, the second one desorbs in a moderate vacuum at room temperature, while the confined water can be removed at room temperature at higher vacuum, i.e. $10^{-3}$ mbar. We also observe that both water adsorption outside and water confinement inside the nanotube are spontaneous and rather fast, i.e. less than 1 minute in our experimental conditions, while removing the water adsorbed outside and confined inside takes much longer, i.e. 40-60 minutes, thus indicating that water confinement is thermodynamically favorable. It is also shown that the metallicity of the nanotube has no qualitative influence on its interaction with water. Our results experimentally prove the stronger affinity of water for the inner surface of CNT than for the outer one.
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Submitted 16 December, 2024;
originally announced December 2024.
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Quantifying the performances of SU-8 microfluidic devices: high liquid water tightness, long-term stability, and vacuum compatibility
Authors:
Said Pashayev,
Romain Lhermerout,
Christophe Roblin,
Eric Alibert,
Jérôme Barbat,
Rudy Desgarceaux,
Rémi Jelinek,
Edouard Chauveau,
Saïd Tahir,
Vincent Jourdain,
Rasim Jabbarov,
Francois Henn,
Adrien Noury
Abstract:
Despite several decades of development, microfluidics lacks a sealing material that can be readily fabricated, leak-tight under high liquid water pressure, stable over a long time, and vacuum compatible. In this paper, we report the performances of a micro-scale processable sealing material for nanofluidic/microfluidics chip fabrication, which enables us to achieve all these requirements. We obser…
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Despite several decades of development, microfluidics lacks a sealing material that can be readily fabricated, leak-tight under high liquid water pressure, stable over a long time, and vacuum compatible. In this paper, we report the performances of a micro-scale processable sealing material for nanofluidic/microfluidics chip fabrication, which enables us to achieve all these requirements. We observed that micrometric walls made of SU-8 photoresist, whose thickness can be as low as 35 $μ$m, exhibit water pressure leak-tightness from 1.5 bar up to 5.5 bar, no water porosity even after 2 months of aging, and are able to sustain under $10^{-5}$ mbar vacuum. This sealing material is therefore reliable and versatile for building microchips, part of which must be isolated from liquid water under pressure or vacuum. Moreover, the fabrication process we propose does not require the use of aggressive chemicals or high-temperature or high-energy plasma treatment. It thus opens a new perspective to seal microchips where delicate surfaces such as nanomaterials are present.
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Submitted 10 October, 2023;
originally announced October 2023.
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Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells
Authors:
C. Avogadri,
S. Gebert,
S. S. Krishtopenko,
I. Castillo,
C. Consejo,
S. Ruffenach,
C. Roblin,
C. Bray,
Y. Krupko,
S. Juillaguet,
S. Contreras,
S. Juillaguet,
A. Wolf,
F. Hartmann,
S. Höfling,
G. Boissier,
J. B. Rodriguez,
S. Nanot,
E. Tournié,
F. Teppe,
B. Jouault
Abstract:
Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature…
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Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. Combining local and non-local measurements, we attribute the edge conductivity observed at temperatures up to 40 K to the topological edge channels with equilibration lengths of a few micrometers. Our findings pave the way toward manipulating edge transport at high temperatures in QW heterostructures.
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Submitted 11 March, 2022;
originally announced March 2022.
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Controlled light-matter coupling for a single quantum dot embedded in a pillar microcavity using far-field optical lithography
Authors:
A. Dousse,
L. Lanco,
J. Suffczynski,
E. Semenova,
A. Miard,
A. Lemaitre,
I. Sagnes,
C. Roblin,
J. Bloch,
P. Senellart
Abstract:
Using far field optical lithography, a single quantum dot is positioned within a pillar microcavity with a 50 nm accuracy. The lithography is performed in-situ at 10 K while measuring the quantum dot emission. Deterministic spectral and spatial matching of the cavity-dot system is achieved in a single step process and evidenced by the observation of strong Purcell effect. Deterministic coupling…
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Using far field optical lithography, a single quantum dot is positioned within a pillar microcavity with a 50 nm accuracy. The lithography is performed in-situ at 10 K while measuring the quantum dot emission. Deterministic spectral and spatial matching of the cavity-dot system is achieved in a single step process and evidenced by the observation of strong Purcell effect. Deterministic coupling of two quantum dots to the same optical mode is achieved, a milestone for quantum computing.
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Submitted 5 January, 2009; v1 submitted 28 July, 2008;
originally announced July 2008.
