Showing 1–2 of 2 results for author: Risbud, S H

Pulsed Laser Deposition of High-Quality Thin Films of the Insulating Ferromagnet EuS

Authors: Qi I. Yang, Jinfeng Zhao, Li Zhang, Merav Dolev, Alexander D. Fried, Ann F. Marshall, Subhash H. Risbud, Aharon Kapitulnik

Abstract: High-quality thin films of the ferromagnetic-insulator europium(II) sulfide (EuS) were fabricated by pulsed laser deposition on Al2O3 (0001) and Si (100) substrates. A single orientation was obtained with the [100] planes parallel to the substrates, with atomic-scale smoothness indicates a near-ideal surface topography. The films exhibit uniform ferromagnetism below 15.9 K, with a substantial comp… ▽ More High-quality thin films of the ferromagnetic-insulator europium(II) sulfide (EuS) were fabricated by pulsed laser deposition on Al2O3 (0001) and Si (100) substrates. A single orientation was obtained with the [100] planes parallel to the substrates, with atomic-scale smoothness indicates a near-ideal surface topography. The films exhibit uniform ferromagnetism below 15.9 K, with a substantial component of the magnetization perpendicular to the plane of the films. Optimization of the growth condition also yielded truly insulating films with immeasurably large resistance. This combination of magnetic and electric properties open the gate for novel devices that require a true ferromagnetic insulator. △ Less

Submitted 25 February, 2014; v1 submitted 17 August, 2013; originally announced August 2013.

Comments: 4 pages, 4 figures

Journal ref: Appl. Phys. Lett. 104, 082402 (2014)

Emerging Weak Localization Effects on Topological Insulator-Insulating Ferromagnet (Bi_2Se_3-EuS) Interface

Authors: Qi I. Yang, Merav Dolev, Li Zhang, Jinfeng Zhao, Alexander D. Fried, Elizabeth Schemm, Min Liu, Alexander Palevski, Ann F. Marshall, Subhash H. Risbud, Aharon Kapitulnik

Abstract: Thin films of topological insulator Bi_2Se_3 were deposited directly on insulating ferromagnetic EuS. Unusual negative magnetoresistance was observed near the zero field below the Curie temperature (T_C), resembling the weak localization effect; whereas the usual positive magnetoresistance was recovered above T_C. Such negative magnetoresistance was only observed for Bi_2Se_3 layers thinner than t… ▽ More Thin films of topological insulator Bi_2Se_3 were deposited directly on insulating ferromagnetic EuS. Unusual negative magnetoresistance was observed near the zero field below the Curie temperature (T_C), resembling the weak localization effect; whereas the usual positive magnetoresistance was recovered above T_C. Such negative magnetoresistance was only observed for Bi_2Se_3 layers thinner than t~4nm, when its top and bottom surfaces are coupled. These results provide evidence for a proximity effect between a topological insulator and an insulating ferromagnet, laying the foundation for future realization of the half-integer quantized anomalous Hall effect in three-dimensional topological insulators. △ Less

Submitted 28 August, 2013; v1 submitted 9 June, 2013; originally announced June 2013.

Comments: 4 figures

Journal ref: Phys. Rev. B 88, 081407(R) (2013)