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Commercial CMOS Process for Quantum Computing: Quantum Dots and Charge Sensing in a 22 nm Fully Depleted Silicon-on-Insulator Process
Authors:
S. V. Amitonov,
A. Aprà ,
M. Asker,
B. Barry,
I. Bashir,
P. Bisiaux,
E. Blokhina,
P. Giounanlis,
P. Hanos-Puskai,
M. Harkin,
I. Kriekouki,
D. Leipold,
M. Moras,
C. Power,
N. Samkharadze,
A. Sokolov,
D. Redmond,
C. Rohrbacher,
X. Wu
Abstract:
Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this communication, we present measurement results of a commercial nanostructure fabricated using the GlobalFoundries 22FDX(TM) industrial process. We demonstrate here that quantum dots are formed in…
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Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this communication, we present measurement results of a commercial nanostructure fabricated using the GlobalFoundries 22FDX(TM) industrial process. We demonstrate here that quantum dots are formed in the device channel by applying a combination of a back- and gate voltages. We report our results on an effective detuning of the energy levels in the quantum dots by varying the barrier gate voltages in combination with the back-gate voltage. Given the need and importance of scaling to larger numbers of qubits, we demonstrate here the feasibility of single-electron box sensors at the edge of the quantum dot array for effective charge sensing in different operation modes -- sensing charge transitions in a single- and double quantum dots forming the quantum dot array. We also report measurement results demonstrating bias triangle pair formation and precise control over coupled quantum dots with variations in the inter-dot barrier. The reported measurement results demonstrate the ability to control the formation and coupling of multiple quantum dots in a quantum dot array and to sense their charge state via a Single Electron Box sensor in a commercial process for the first time.
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Submitted 20 December, 2024; v1 submitted 11 December, 2024;
originally announced December 2024.
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Common-Mode Control and Confinement Inversion of Electrostatically Defined Quantum Dots in a Commercial CMOS Process
Authors:
Andrii Sokolov,
Xutong Wu,
Conor Power,
Mike Asker,
Panagiotis Giounanlis,
Ioanna Kriekouki,
Peter Hanos-Puskai,
Conor McGeough,
Imran Bashir,
David Redmond,
Dirk Leipold,
Bogdan Staszewski,
Elena Blokhina
Abstract:
Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this article, we present our results on a calibrated model of a commercial nanostructure using the simulation tool Quantum TCAD, along with our experimental verification of all model predictions. We d…
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Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this article, we present our results on a calibrated model of a commercial nanostructure using the simulation tool Quantum TCAD, along with our experimental verification of all model predictions. We demonstrate here that quantum dots can be formed in the device channel by applying a combination of a common-mode voltage to the source and drain and a back gate voltage. Moreover, in this approach, the amount of quantum dots can be controlled and modified. Also, we report our results on an effective detuning of the energy levels in the quantum dots by varying the barrier gate voltages. Given the need and importance of scaling to larger numbers of qubits, we demonstrate here the feasibility of simulating and improving the design of quantum dot devices before their fabrication based on a commercial process.
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Submitted 11 December, 2024;
originally announced December 2024.
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Spin Qubit Performance at the Error Correction Threshold: Advancing Quantum Information Processing Above 700 mK
Authors:
S. Amitonov,
A. Aprà ,
M. Asker,
R. Bals,
B. Barry,
I. Bashir,
E. Blokhina,
P. Giounanlis,
M. Harkin,
P. Hanos-Puskai,
I. Kriekouki,
D. Leipold,
M. Moras,
N. Murphy,
N. Petropoulos,
C. Power,
A. Sammak,
N. Samkharadze,
A. Semenov,
A. Sokolov,
D. Redmond,
C. Rohrbacher,
X. Wu
Abstract:
This paper presents a characterization of a two-qubit processor in a 6-quantum dot array in SiGe, from the perspective of its quantum information processing capabilities. The analysis includes randomized benchmarking of single- and two-qubit gates, SPAM characterization, and Bell's state tomography; all basic functionality required for universal quantum computation. In light of our efforts to comb…
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This paper presents a characterization of a two-qubit processor in a 6-quantum dot array in SiGe, from the perspective of its quantum information processing capabilities. The analysis includes randomized benchmarking of single- and two-qubit gates, SPAM characterization, and Bell's state tomography; all basic functionality required for universal quantum computation. In light of our efforts to combine spin qubits with integrated cryogenic electronics, we evaluate the qubits' performance metrics at 300mK and 740mK. The latter temperature lies within the realistic thermal budget for integrated cryogenic electronics, making it particularly relevant for assessing qubit performance in practical scenarios.
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Submitted 23 January, 2025; v1 submitted 2 December, 2024;
originally announced December 2024.
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Scheduling Battery-Electric Bus Charging under Stochasticity using a Receding-Horizon Approach
Authors:
Justin Whitaker,
Derek Redmond,
Greg Droge,
Jacob Gunther
Abstract:
A significant challenge of adopting battery electric buses into fleets lies in scheduling the charging, which in turn is complicated by considerations such as timing constraints imposed by routes, long charging times, limited numbers of chargers, and utility cost structures. This work builds on previous network-flow-based charge scheduling approaches and includes both consumption and demand time-o…
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A significant challenge of adopting battery electric buses into fleets lies in scheduling the charging, which in turn is complicated by considerations such as timing constraints imposed by routes, long charging times, limited numbers of chargers, and utility cost structures. This work builds on previous network-flow-based charge scheduling approaches and includes both consumption and demand time-of-use costs while accounting for uncontrolled loads on the same meter. Additionally, a variable-rate, non-linear partial charging model compatible with the mixed-integer linear program (MILP) is developed for increased charging fidelity. To respond to feedback in an uncertain environment, the resulting MILP is adapted to a hierarchical receding horizon planner that utilizes a static plan for the day as a reference to follow while reacting to stochasticity on a regular basis. This receding horizon planner is analyzed with Monte-Carlo techniques alongside two other possible planning methods. It is found to provide up to 52\% cost savings compared to a non-time-of-use aware method and significant robustness benefits compared to an optimal open-loop method.
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Submitted 7 August, 2024;
originally announced August 2024.
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A Case For Noisy Shallow Gate-Based Circuits In Quantum Machine Learning
Authors:
Patrick Selig,
Niall Murphy,
Ashwin Sundareswaran R,
David Redmond,
Simon Caton
Abstract:
There is increasing interest in the development of gate-based quantum circuits for the training of machine learning models. Yet, little is understood concerning the parameters of circuit design, and the effects of noise and other measurement errors on the performance of quantum machine learning models. In this paper, we explore the practical implications of key circuit design parameters (number of…
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There is increasing interest in the development of gate-based quantum circuits for the training of machine learning models. Yet, little is understood concerning the parameters of circuit design, and the effects of noise and other measurement errors on the performance of quantum machine learning models. In this paper, we explore the practical implications of key circuit design parameters (number of qubits, depth etc.) using several standard machine learning datasets and IBM's Qiskit simulator. In total we evaluate over 6500 unique circuits with $n \approx 120700$ individual runs. We find that in general shallow (low depth) wide (more qubits) circuit topologies tend to outperform deeper ones in settings without noise. We also explore the implications and effects of different notions of noise and discuss circuit topologies that are more / less robust to noise for classification machine learning tasks. Based on the findings we define guidelines for circuit topologies that show near-term promise for the realisation of quantum machine learning algorithms using gate-based NISQ quantum computer.
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Submitted 13 December, 2021;
originally announced December 2021.
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Monolithic Integration of Quantum Resonant Tunneling Gate on a 22nm FD-SOI CMOS Process
Authors:
Imran Bashir,
Dirk Leipold,
Elena Blokhina,
Mike Asker,
David Redmond,
Ali Esmailiyan,
Panagiotis Giounanlis,
Hans Haenlein,
Xuton Wu,
Andrii Sokolov,
Dennis Andrade-Miceli,
Andrew K. Mitchell,
Robert Bogdan Staszewski
Abstract:
The proliferation of quantum computing technologies has fueled the race to build a practical quantum computer. The spectrum of the innovation is wide and encompasses many aspects of this technology, such as the qubit, control and detection mechanism, cryogenic electronics, and system integration. A few of those emerging technologies are poised for successful monolithic integration of cryogenic ele…
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The proliferation of quantum computing technologies has fueled the race to build a practical quantum computer. The spectrum of the innovation is wide and encompasses many aspects of this technology, such as the qubit, control and detection mechanism, cryogenic electronics, and system integration. A few of those emerging technologies are poised for successful monolithic integration of cryogenic electronics with the quantum structure where the qubits reside. In this work, we present a fully integrated Quantum Processor Unit in which the quantum core is co-located with control and detection circuits on the same die in a commercial 22-nm FD-SOI process from GlobalFoundries. The system described in this work comprises a two dimensional (2D) 240 qubits array integrated with 8 detectors and 32 injectors operating at 3K and inside a two-stage Gifford-McMahon cryo-cooler. The power consumption of each detector and injector is 1mW and 0.27mW, respectively. The control sequence is programmed into an on-chip pattern generator that acts as a command and control block for all hardware in the Quantum Processor Unit. Using the aforementioned apparatus, we performed a quantum resonant tunneling experiment on two qubits inside the 2D qubit array. With supporting lab measurements, we demonstrate the feasibility of the proposed architecture in scaling-up the existing quantum core to thousands of qubits.
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Submitted 4 February, 2022; v1 submitted 8 December, 2021;
originally announced December 2021.
