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Characterization of Chromium Impurities in $β$-Ga$_2$O$_3$
Authors:
Mark E. Turiansky,
Sai Mu,
Lukas Razinkovas,
Kamyar Parto,
Sahil D. Patel,
Sean Doan,
Ganesh Pokharel,
Steven J. Gomez Alvarado,
Stephen D. Wilson,
Galan Moody,
Chris G. Van de Walle
Abstract:
Chromium is a common transition-metal impurity that is easily incorporated during crystal growth. It is perhaps best known for giving rise to the 694.3 nm (1.786 eV) emission in Cr-doped Al$_2$O$_3$, exploited in ruby lasers. Chromium has also been found in monoclinic gallium oxide, a wide-bandgap semiconductor being pursued for power electronics. In this work, we thoroughly characterize the behav…
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Chromium is a common transition-metal impurity that is easily incorporated during crystal growth. It is perhaps best known for giving rise to the 694.3 nm (1.786 eV) emission in Cr-doped Al$_2$O$_3$, exploited in ruby lasers. Chromium has also been found in monoclinic gallium oxide, a wide-bandgap semiconductor being pursued for power electronics. In this work, we thoroughly characterize the behavior of Cr in Ga$_2$O$_3$ through theoretical and experimental techniques. $β$-Ga$_2$O$_3$ samples are grown with the floating zone method and show evidence of a sharp photoluminescence signal, reminiscent of ruby. We calculate the energetics of formation of Cr from first principles, demonstrating that Cr preferentially incorporates as a neutral impurity on the octahedral site. Cr possesses a quartet ground-state spin and has an internal transition with a zero-phonon line near 1.8 eV. By comparing the calculated and experimentally measured luminescence lineshape function, we elucidate the role of coupling to phonons and uncover features beyond the Franck-Condon approximation. The combination of strong emission with a small Huang-Rhys factor of 0.05 and a technologically relevant host material render Cr in Ga$_2$O$_3$ attractive as a quantum defect.
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Submitted 31 December, 2024;
originally announced January 2025.
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Theory of the divacancy in 4H-SiC: Impact of Jahn-Teller effect on optical properties
Authors:
Vytautas Žalandauskas,
Rokas Silkinis,
Lasse Vines,
Lukas Razinkovas,
Marianne Etzelmüller Bathen
Abstract:
Understanding the optical properties of color centers in silicon carbide is essential for their use in quantum technologies, such as single-photon emission and spin-based qubits. In this work, first-principles calculations were employed using the r2SCAN density functional to investigate the electronic and vibrational properties of neutral divacancy configurations in 4H-SiC. Our approach addresses…
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Understanding the optical properties of color centers in silicon carbide is essential for their use in quantum technologies, such as single-photon emission and spin-based qubits. In this work, first-principles calculations were employed using the r2SCAN density functional to investigate the electronic and vibrational properties of neutral divacancy configurations in 4H-SiC. Our approach addresses the dynamical Jahn-Teller effect in the excited states of axial divacancies. By explicitly solving the multimode dynamical Jahn-Teller problem, we compute emission and absorption lineshapes for axial divacancy configurations, providing insights into the complex interplay between electronic and vibrational degrees of freedom. The results show strong alignment with experimental data, underscoring the predictive power of the methodologies. Our calculations predict spontaneous symmetry breaking due to the pseudo Jahn-Teller effect in the excited state of the $kh$ divacancy, accompanied by the lowest electron-phonon coupling among the four configurations and distinct polarizability. These unique properties facilitate its selective excitation, setting it apart from other divacancy configurations, and highlight its potential utility in quantum technology applications. These findings underscore the critical role of electron-phonon interactions and optical properties in spin defects with pronounced Jahn-Teller effects, offering valuable insights for the design and integration of quantum emitters for quantum technologies.
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Submitted 3 December, 2024; v1 submitted 2 December, 2024;
originally announced December 2024.
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Optical lineshapes of the C-center in silicon from ab initio calculations: Interplay of localized modes and bulk phonons
Authors:
Rokas Silkinis,
Marek Maciaszek,
Vytautas Žalandauskas,
Marianne Etzelmüller Bathen,
Lasse Vines,
Audrius Alkauskas,
Lukas Razinkovas
Abstract:
In this work, we present a first-principles density functional theory (DFT) computational investigation of the luminescence and absorption lineshapes associated with the neutral carbon-oxygen interstitial pair (CiOi) defect in silicon. We obtain the lineshapes of the defect in the dilute limit using a computational methodology that constructs dynamical matrices of supercells containing tens of tho…
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In this work, we present a first-principles density functional theory (DFT) computational investigation of the luminescence and absorption lineshapes associated with the neutral carbon-oxygen interstitial pair (CiOi) defect in silicon. We obtain the lineshapes of the defect in the dilute limit using a computational methodology that constructs dynamical matrices of supercells containing tens of thousands of atoms, utilizing systems directly accessible through DFT. Both perturbed bulk phonons and localized vibrations contribute to the phonon sideband. We achieve excellent agreement with experimental luminescence data. Our findings further reinforce the attribution of the well-known C-line in silicon to the neutral CiOi complex.
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Submitted 30 October, 2024; v1 submitted 29 October, 2024;
originally announced October 2024.
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Magneto-optical properties of Group-IV--vacancy centers in diamond upon hydrostatic pressure
Authors:
Meysam Mohseni,
Lukas Razinkovas,
Vytautas Žalandauskas,
Gergő Thiering,
Adam Gali
Abstract:
In recent years, the negatively charged group-IV--vacancy defects in diamond, labeled as G4V(-) or G4V centers, have attracted significant attention in quantum information processing. In this study, we investigate the magneto-optical properties of G4V centers under high compressive hydrostatic pressures up to 180 GPa. The spin-orbit splitting of the electronic ground and excited states, as well as…
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In recent years, the negatively charged group-IV--vacancy defects in diamond, labeled as G4V(-) or G4V centers, have attracted significant attention in quantum information processing. In this study, we investigate the magneto-optical properties of G4V centers under high compressive hydrostatic pressures up to 180 GPa. The spin-orbit splitting of the electronic ground and excited states, as well as the hyperfine tensors, are calculated using plane-wave supercell density functional theory, providing distinctive fingerprints that uniquely characterize these defects. To this end, we develop a theory for calculating the hyperfine tensors when the electronic states are subject to the Jahn--Teller effect. We find that the zero-phonon-line energy increases with hydrostatic pressure, with the deformation potential increasing from SiV(-) to PbV(-). On the other hand, our calculated photoionization threshold energies indicate that PbV(-)-based quantum sensors can operate only up to 32 GPa, whereas SnV(-), GeV(-), and SiV(-) remain photostable up to 180 GPa. We also find that the spin-orbit splitting increases in both the electronic ground and excited states with increasing pressure. The optical transitions associated with the hyperfine fine structure of the dopant atoms are interpreted using our theoretical framework, which reproduces existing experimental data at zero strain. We show that the hyperfine levels are weakly dependent on magnetic field, and increasing pressure leads to optical transitions at longer wavelengths. Finally, we estimate the spin coherence times of the G4V centers under increasing hydrostatic pressure across different temperature regimes.
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Submitted 25 April, 2025; v1 submitted 19 August, 2024;
originally announced August 2024.
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Optical lineshapes for orbital singlet to doublet transitions in a dynamical Jahn-Teller system: the NiV$^{-}$ center in diamond
Authors:
Rokas Silkinis,
Vytautas Žalandauskas,
Gergő Thiering,
Adam Gali,
Chris G. Van de Walle,
Audrius Alkauskas,
Lukas Razinkovas
Abstract:
We apply density functional theory to investigate interactions between electronic and vibrational states in crystal defects with multi-mode dynamical Jahn-Teller (JT) systems. Our focus is on transitions between orbital singlet and degenerate orbital doublet characterized by $E \otimes (e \oplus e \oplus \cdots)$ JT coupling, which frequently occurs in crystal defects that are investigated for app…
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We apply density functional theory to investigate interactions between electronic and vibrational states in crystal defects with multi-mode dynamical Jahn-Teller (JT) systems. Our focus is on transitions between orbital singlet and degenerate orbital doublet characterized by $E \otimes (e \oplus e \oplus \cdots)$ JT coupling, which frequently occurs in crystal defects that are investigated for applications in quantum information science. We utilize a recently developed methodology to model the photoluminescence (PL) spectrum of the negatively charged split nickel-vacancy center (NiV$^{-}$) in diamond, where JT-active modes significantly influence electron-phonon interactions. Our results validate the effectiveness of the methodology in accurately reproducing the observed 1.4 eV PL lineshape. The strong agreement between our theoretical predictions and experimental observations reinforces the identification of the 1.4 eV PL center with the NiV$^{-}$ complex. This study highlights the critical role of JT-active modes in affecting optical lineshapes and demonstrates the power of advanced techniques for modeling optical properties in complex systems with multiple JT-active frequencies.
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Submitted 1 July, 2024; v1 submitted 15 June, 2024;
originally announced June 2024.
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Blue quantum emitter in hexagonal boron nitride and carbon chain tetramer: proposition of identification
Authors:
Marek Maciaszek,
Lukas Razinkovas
Abstract:
Single photon emitters in hexagonal boron nitride offer a gateway to the future of quantum technologies, yet their identification remains challenging and subject to ongoing debate. We demonstrate through ab initio calculations that the optical properties of a carbon chain tetramer are in excellent agreement with the characteristics of a blue quantum emitter in hexagonal boron nitride emitting at 4…
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Single photon emitters in hexagonal boron nitride offer a gateway to the future of quantum technologies, yet their identification remains challenging and subject to ongoing debate. We demonstrate through ab initio calculations that the optical properties of a carbon chain tetramer are in excellent agreement with the characteristics of a blue quantum emitter in hexagonal boron nitride emitting at 435 nm. Its calculated zero-phonon line energy (2.77 eV) and radiative lifetime (1.6 ns) perfectly align with experimental observations. The relatively weak electron--phonon coupling (Huang-Rhys factor of 1.5) indicates intense emission at the zero-phonon line. Despite the absence of an inversion center in the carbon tetramer, we demonstrate that it exhibits a negligible linear Stark effect, consistent with experimental findings. Additionally, our hypothesis explains the experimental observation that the formation of blue emitters is only possible in samples containing numerous ultraviolet emitters, which are likely identical to carbon dimers.
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Submitted 14 April, 2024;
originally announced April 2024.
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Enhancement of spin-to-charge conversion of diamond NV centers at ambient conditions using surface electrodes
Authors:
Liam Hanlon,
Michael Olney-Fraser,
Lukas Razinkovas,
Marcus W. Dohert
Abstract:
The nitrogen-vacancy (NV) center in diamond is a heavily studied defect due to its potential applications to quantum metrology and computation, particularly in ambient conditions. The key mechanism to using the NV in any application lies in the ability to read out the spin state of the defect which is typically done optically. The optical contrast is then the key metric for electron spin readout f…
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The nitrogen-vacancy (NV) center in diamond is a heavily studied defect due to its potential applications to quantum metrology and computation, particularly in ambient conditions. The key mechanism to using the NV in any application lies in the ability to read out the spin state of the defect which is typically done optically. The optical contrast is then the key metric for electron spin readout fidelity and one of the key limiting factors in the NV's overall performance. We present a new mechanism for high contrast readout using the spin-to-charge conversion (SCC) mechanism in conjunction with an electrode to improve the spin contrast by altering the NV energy levels relative to the diamond conduction band. Theoretical modelling predicts an optical spin contrast at 42% which would be the highest optical contrast for the NV at room temperature and the technique opens up a range of alternative research pathways for the NV which are discussed.
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Submitted 28 September, 2022;
originally announced September 2022.
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Optical properties of SiV and GeV color centers in nanodiamonds under hydrostatic pressures up to 180 GPa
Authors:
Baptiste Vindolet,
Marie-Pierre Adam,
Loïc Toraille,
Mayeul Chipaux,
Antoine Hilberer,
Géraud Dupuy,
Lukas Razinkovas,
Audrius Alkauskas,
Gergő Thiering,
Adam Gali,
Mary De Feudis,
Midrel Wilfried Ngandeu Ngambou,
Jocelyn Achard,
Alexandre Tallaire,
Martin Schmidt,
Christoph Becher,
Jean-François Roch
Abstract:
We investigate the optical properties of silicon-vacancy (SiV) and germanium-vacancy (GeV) color centers in nanodiamonds under hydrostatic pressure up to 180 GPa. The nanodiamonds were synthetized by Si or Ge-doped plasma assisted chemical vapor deposition and, for our experiment, pressurized in a diamond anvil cell. Under hydrostatic pressure we observe blue-shifts of the SiV and GeV zero-phonon…
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We investigate the optical properties of silicon-vacancy (SiV) and germanium-vacancy (GeV) color centers in nanodiamonds under hydrostatic pressure up to 180 GPa. The nanodiamonds were synthetized by Si or Ge-doped plasma assisted chemical vapor deposition and, for our experiment, pressurized in a diamond anvil cell. Under hydrostatic pressure we observe blue-shifts of the SiV and GeV zero-phonon lines by 17 THz (70 meV) and 78 THz (320 meV), respectively. These measured pressure induced shifts are in good agreement with ab initio calculations that take into account the lattice compression based on the equation of state of diamond and that are extended to the case of the tin-vacancy (SnV) center. This work provides guidance on the use of group-IV-vacancy centers as quantum sensors under extreme pressures that will exploit their specific optical and spin properties induced by their intrinsic inversion-symmetric structure.
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Submitted 29 November, 2022; v1 submitted 20 September, 2022;
originally announced September 2022.
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Thermodynamics of carbon point defects in hexagonal boron nitride
Authors:
Marek Maciaszek,
Lukas Razinkovas,
Audrius Alkauskas
Abstract:
We present a first-principles computational study of the thermodynamics of carbon defects in hexagonal boron nitride (hBN). The defects considered are carbon monomers, dimers, trimers, and larger carbon clusters, as well as complexes of carbon with vacancies, antisites, and substitutional oxygen. Our calculations show that monomers ($\text{C}_{\text{B}}$, $\text{C}_{\text{B}}$), dimers, trimers, a…
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We present a first-principles computational study of the thermodynamics of carbon defects in hexagonal boron nitride (hBN). The defects considered are carbon monomers, dimers, trimers, and larger carbon clusters, as well as complexes of carbon with vacancies, antisites, and substitutional oxygen. Our calculations show that monomers ($\text{C}_{\text{B}}$, $\text{C}_{\text{B}}$), dimers, trimers, and $\text{C}_{\text{N}}\text{O}_{\text{N}}$ pairs are the most prevalent species under most growth conditions. Compared to these defects, larger carbon clusters, as well as complexes of carbon with vacancies and antisites, occur at much smaller concentrations. Our results are discussed in view of the relevance of carbon defects in single-photon emission in hBN.
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Submitted 30 December, 2021; v1 submitted 23 October, 2021;
originally announced October 2021.
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Photoionization of negatively charged NV centers in diamond: theory and ab initio calculations
Authors:
Lukas Razinkovas,
Marek Maciaszek,
Friedemann Reinhard,
Marcus W. Doherty,
Audrius Alkauskas
Abstract:
We present ab-initio calculations of photoionization thresholds and cross sections of the negatively charged nitrogen-vacancy (NV) center in diamond from the ground $^{3}\!A_2$ and the excited $^{3}\!E$ states. We show that after the ionization from the $^{3}\!E$ level the NV center transitions into the metastable $^{4}\!A_2$ electronic state of the neutral defect. We reveal how spin polarization…
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We present ab-initio calculations of photoionization thresholds and cross sections of the negatively charged nitrogen-vacancy (NV) center in diamond from the ground $^{3}\!A_2$ and the excited $^{3}\!E$ states. We show that after the ionization from the $^{3}\!E$ level the NV center transitions into the metastable $^{4}\!A_2$ electronic state of the neutral defect. We reveal how spin polarization of $\mathrm{NV}^{-}$ gives rise to spin polarization of the $^{4}\!A_2$ state, providing an explanation of electron spin resonance experiments. We obtain smooth photoionization cross sections by employing dense $k$-point meshes for the Brillouin zone integration together with the band unfolding technique to rectify the distortions of the band structure induced by artificial periodicity of the supercell approach. Our calculations provide a comprehensive picture of photoionization mechanisms of $\mathrm{NV}^{-}$. They will be useful in interpreting and designing experiments on charge-state dynamics at NV centers. In particular, we offer a consistent explanation of recent results of spin-to-charge conversion of NV centers.
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Submitted 20 April, 2021; v1 submitted 19 April, 2021;
originally announced April 2021.
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Vibrational and vibronic structure of isolated point defects: the nitrogen-vacancy center in diamond
Authors:
Lukas Razinkovas,
Marcus W. Doherty,
Neil B. Manson,
Chris G. Van de Walle,
Audrius Alkauskas
Abstract:
We present a theoretical study of vibrational and vibronic properties of a point defect in the dilute limit by means of first-principles density functional theory calculations. As an exemplar we choose the negatively charged nitrogen-vacancy center, a solid-state system that has served as a testbed for many protocols of quantum technology. We achieve low effective concentrations of defects by cons…
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We present a theoretical study of vibrational and vibronic properties of a point defect in the dilute limit by means of first-principles density functional theory calculations. As an exemplar we choose the negatively charged nitrogen-vacancy center, a solid-state system that has served as a testbed for many protocols of quantum technology. We achieve low effective concentrations of defects by constructing dynamical matrices of large supercells containing tens of thousands of atoms. The main goal of the paper is to calculate luminescence and absorption lineshapes due to coupling to vibrational degrees of freedom. The coupling to symmetric $a_1$ modes is computed via the Huang-Rhys theory. Importantly, to include a nontrivial contribution of $e$ modes we develop an effective methodology to solve the multi-mode $E \otimes e$ Jahn-Teller problem. Our results show that for NV centers in diamond a proper treatment of $e$ modes is particularly important for absorption. We obtain good agreement with experiment for both luminescence and absorption. Finally, the remaining shortcomings of the theoretical approach are critically reviewed. The presented theoretical approach will benefit identification and future studies of point defects in solids.
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Submitted 6 August, 2021; v1 submitted 8 December, 2020;
originally announced December 2020.
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Vibrational modes of negatively charged silicon-vacancy centers in diamond from ab initio calculations
Authors:
Elisa Londero,
Gergő Thiering,
Lukas Razinkovas,
Adam Gali,
Audrius Alkauskas
Abstract:
Silicon-vacancy (SiV) center in diamond is a photoluminescence (PL) center with a characteristic zero-phonon line energy at 1.681 eV that acts as a solid-state single photon source and, potentially, as a quantum bit. The majority of the luminescence intensity appears in the zero-phonon line; nevertheless, about 30\% of the intensity manifests in the phonon sideband. Since phonons play an essential…
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Silicon-vacancy (SiV) center in diamond is a photoluminescence (PL) center with a characteristic zero-phonon line energy at 1.681 eV that acts as a solid-state single photon source and, potentially, as a quantum bit. The majority of the luminescence intensity appears in the zero-phonon line; nevertheless, about 30\% of the intensity manifests in the phonon sideband. Since phonons play an essential role in the operation of this system, it is of importance to understand the vibrational properties of the SiV center in detail. To this end, we carry out density functional theory calculations of dilute SiV centers by embedding the defect in supercells of a size of a few thousand atoms. We find that there exist two well-pronounced quasi-local vibrational modes (resonances) with $A_{2u}$ and $E_u$ symmetries, corresponding to the vibration of the Si atom along and perpendicular to the defect symmetry axis, respectively. Isotopic shifts of these modes explain the isotopic shifts of prominent vibronic features in the experimental SiV PL spectrum. Moreover, calculations show that the vibrational frequency of the $A_{2u}$ mode increases by about 30\% in the excited state with respect to the ground state, while the frequency of the $E_u$ mode increases by about 5\%. These changes explain experimentally observed isotopic shifts of the zero-phonon line energy. We also emphasize possible dangers of extracting isotopic shifts of vibrational resonances from finite-size supercell calculations, and instead propose a method to do this correctly.
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Submitted 30 July, 2021; v1 submitted 10 May, 2016;
originally announced May 2016.
