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Manifestation of nonlocal electron-electron interaction in graphene
Authors:
Søren Ulstrup,
Malte Schüler,
Marco Bianchi,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Tim Wehling,
Philip Hofmann
Abstract:
Graphene is an ideal platform to study many-body effects due to its semimetallic character and the possibility to dope it over a wide range. Here we study the width of graphene's occupied $π$-band as a function of doping using angle-resolved photoemission. Upon increasing electron doping, we observe the expected shift of the band to higher binding energies. However, this shift is not rigid and the…
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Graphene is an ideal platform to study many-body effects due to its semimetallic character and the possibility to dope it over a wide range. Here we study the width of graphene's occupied $π$-band as a function of doping using angle-resolved photoemission. Upon increasing electron doping, we observe the expected shift of the band to higher binding energies. However, this shift is not rigid and the bottom of the band moves less than the Dirac point. We show that the observed shift cannot be accounted for by band structure calculations in the local density approximation but that non-local exchange interactions must be taken into account.
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Submitted 2 April, 2016;
originally announced April 2016.
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Ultrafast Electron Dynamics in Epitaxial Graphene Investigated with Time- and Angle-Resolved Photoemission Spectroscopy
Authors:
Søren Ulstrup,
Jens Christian Johannsen,
Alberto Crepaldi,
Federico Cilento,
Michele Zacchigna,
Cephise Cacho,
Richard T. Chapman,
Emma Springate,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Fulvio Parmigiani,
Marco Grioni,
Philip Hofmann
Abstract:
In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses triggers a series of processes involving interactions between electrons, phonons and impurities. Here we study these interactions in epitaxial graphe…
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In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses triggers a series of processes involving interactions between electrons, phonons and impurities. Here we study these interactions in epitaxial graphene supported on silicon carbide (semiconducting) and iridium (metallic) substrates using ultrafast time- and angle-resolved photoemission spectroscopy (TR-ARPES) based on high harmonic generation. For the semiconducting substrate we reveal a complex hot carrier dynamics that manifests itself in an elevated electronic temperature and an increase in linewidth of the $π$ band. By analyzing these effects we are able to disentangle electron relaxation channels in graphene. On the metal substrate this hot carrier dynamics is found to be severely perturbed by the presence of the metal, and we find that the electronic system is much harder to heat up than on the semiconductor due to screening of the laser field by the metal.
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Submitted 5 January, 2016;
originally announced January 2016.
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Tunable Carrier Multiplication and Cooling in Graphene
Authors:
Jens C. Johannsen,
Søren Ulstrup,
Alberto Crepaldi,
Federico Cilento,
Michele Zacchigna,
Jill A. Miwa,
Cephise Cacho,
Richard T. Chapman,
Emma Springate,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Phil D. C. King,
Fulvio Parmigiani,
Marco Grioni,
Philip Hofmann
Abstract:
Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly ($n$-)doped graphene, we observe larger carrier multiplication factors ($>$ 3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium c…
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Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly ($n$-)doped graphene, we observe larger carrier multiplication factors ($>$ 3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium compared to in the less ($p$-)doped graphene. These results suggest that a careful tuning of the doping level allows for an effective manipulation of graphene's dynamical response to a photoexcitation.
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Submitted 4 January, 2016;
originally announced January 2016.
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Ramifications of Optical Pumping on the Interpretation of Time-Resolved Photoemission Experiments on Graphene
Authors:
Søren Ulstrup,
Jens Christian Johannsen,
Federico Cilento,
Alberto Crepaldi,
Jill A. Miwa,
Michele Zacchigna,
Cephise Cacho,
Richard T. Chapman,
Emma Springate,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Phil D. C. King,
Fulvio Parmigiani,
Marco Grioni,
Philip Hofmann
Abstract:
In pump-probe time and angle-resolved photoemission spectroscopy (TR-ARPES) experiments the presence of the pump pulse adds a new level of complexity to the photoemission process in comparison to conventional ARPES. This is evidenced by pump-induced vacuum space-charge effects and surface photovoltages, as well as multiple pump excitations due to internal reflections in the sample-substrate system…
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In pump-probe time and angle-resolved photoemission spectroscopy (TR-ARPES) experiments the presence of the pump pulse adds a new level of complexity to the photoemission process in comparison to conventional ARPES. This is evidenced by pump-induced vacuum space-charge effects and surface photovoltages, as well as multiple pump excitations due to internal reflections in the sample-substrate system. These processes can severely affect a correct interpretation of the data by masking the out-of-equilibrium electron dynamics intrinsic to the sample. In this study, we show that such effects indeed influence TR-ARPES data of graphene on a silicon carbide (SiC) substrate. In particular, we find a time- and laser fluence-dependent spectral shift and broadening of the acquired spectra, and unambiguously show the presence of a double pump excitation. The dynamics of these effects is slower than the electron dynamics in the graphene sample, thereby permitting us to deconvolve the signals in the time domain. Our results demonstrate that complex pump-related processes should always be considered in the experimental setup and data analysis.
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Submitted 5 February, 2015;
originally announced February 2015.
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Ultrafast Dynamics of Massive Dirac Fermions in Bilayer Graphene
Authors:
Søren Ulstrup,
Jens Christian Johannsen,
Federico Cilento,
Jill A. Miwa,
Alberto Crepaldi,
Michele Zacchigna,
Cephise Cacho,
Richard Chapman,
Emma Springate,
Samir Mammadov,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Fulvio Parmigiani,
Marco Grioni,
Phil D. C. King,
Philip Hofmann
Abstract:
Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gap's effect on the optical and transport behavior has emerged so far, and it has been proposed that the insulating nature of the gap could be compromised by unavoidable structural defects, by to…
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Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gap's effect on the optical and transport behavior has emerged so far, and it has been proposed that the insulating nature of the gap could be compromised by unavoidable structural defects, by topological in-gap states, or that the electronic structure could be altogether changed by many-body effects. Here we directly follow the excited carriers in bilayer graphene on a femtosecond time scale, using ultrafast time- and angle-resolved photoemission. We find a behavior consistent with a single-particle band gap. Compared to monolayer graphene, the existence of this band gap leads to an increased carrier lifetime in the minimum of the lowest conduction band. This is in sharp contrast to the second sub-state of the conduction band, in which the excited electrons decay through fast, phonon-assisted inter-band transitions.
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Submitted 1 March, 2014;
originally announced March 2014.
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Direct view on the ultrafast carrier dynamics in graphene
Authors:
Jens Christian Johannsen,
Søren Ulstrup,
Federico Cilento,
Alberto Crepaldi,
Michele Zacchigna,
Cephise Cacho,
I. C. Edmond Turcu,
Emma Springate,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Fulvio Parmigiani,
Marco Grioni,
Philip Hofmann
Abstract:
The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum and plays a central role for many electronic and optoelectronic applications. Harvesting energy from excited electron-hole pairs, for instance, is only possible if these pairs can be separated before they lose energy to vibrations, merely heating the lattice. While the hot carrier dynamics in graphene co…
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The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum and plays a central role for many electronic and optoelectronic applications. Harvesting energy from excited electron-hole pairs, for instance, is only possible if these pairs can be separated before they lose energy to vibrations, merely heating the lattice. While the hot carrier dynamics in graphene could so far only be accessed indirectly, we here present a direct time-resolved view on the Dirac cone by angle-resolved photoemission (ARPES). This allows us to show the quasi-instant thermalisation of the electron gas to a temperature of more than 2000 K; to determine the time-resolved carrier density; to disentangle the subsequent decay into excitations of optical phonons and acoustic phonons (directly and via supercollisions); and to show how the presence of the hot carrier distribution affects the lifetime of the states far below the Fermi energy.
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Submitted 9 April, 2013;
originally announced April 2013.
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Detecting the local transport properties and the dimensionality of transport of epitaxial graphene by a multi-point probe approach
Authors:
Lucas Barreto,
Edward Perkins,
Jens Johannsen,
Søren Ulstrup,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Philip Hofmann
Abstract:
The electronic transport properties of epitaxial monolayer graphene (MLG) and hydrogen-intercalated quasi free-standing bilayer graphene (QFBLG) on SiC(0001) are investigated by micro multi-point probes. Using a probe with 12 contacts, we perform four-point probe measurements with the possibility to effectively vary the contact spacing over more than one order of magnitude, allowing us to establis…
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The electronic transport properties of epitaxial monolayer graphene (MLG) and hydrogen-intercalated quasi free-standing bilayer graphene (QFBLG) on SiC(0001) are investigated by micro multi-point probes. Using a probe with 12 contacts, we perform four-point probe measurements with the possibility to effectively vary the contact spacing over more than one order of magnitude, allowing us to establish that the transport is purely two-dimensional. Combined with the carrier density obtained by angle-resolved photoemission spectroscopy, we find the room temperature mobility of MLG to be (870+-120)cm2/Vs. The transport in QFBLG is also found to be two-dimensional with a mobility of (1600+-160) cm2/Vs.
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Submitted 2 November, 2012;
originally announced November 2012.
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Electron-phonon coupling in quasi free-standing graphene
Authors:
Jens Christian Johannsen,
Søren Ulstrup,
Marco Bianchi,
Richard Hatch,
Dandan Guan,
Federico Mazzola,
Liv Hornekær,
Felix Fromm,
Christian Raidel,
Thomas Seyller,
Philip Hofmann
Abstract:
Quasi free-standing monolayer graphene can be produced by intercalating species like oxygen or hydrogen between epitaxial graphene and the substrate crystal. If the graphene is indeed decoupled from the substrate, one would expect the observation of a similar electronic dispersion and many-body effects, irrespective of the substrate and the material used to achieve the decoupling. Here we investig…
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Quasi free-standing monolayer graphene can be produced by intercalating species like oxygen or hydrogen between epitaxial graphene and the substrate crystal. If the graphene is indeed decoupled from the substrate, one would expect the observation of a similar electronic dispersion and many-body effects, irrespective of the substrate and the material used to achieve the decoupling. Here we investigate the electron-phonon coupling in two different types of quasi free-standing monolayer graphene: decoupled from SiC via hydrogen intercalation and decoupled from Ir via oxygen intercalation. Both systems show a similar overall behaviour of the self-energy and a weak renormalization of the bands near the Fermi energy. The electron-phonon coupling is found to be sufficiently weak to make the precise determination of the coupling constant lambda through renormalization difficult. The estimated value of lambda is 0.05(3) for both systems.
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Submitted 5 October, 2012;
originally announced October 2012.
