Showing 1–12 of 12 results for author: Rai, R K

Coercive Field Reduction in Ultra-thin Al1-XScXN via Interfacial Engineering with a Scandium Electrode

Authors: Yinuo Zhang, Rajeev Kumar Rai, Giovanni Esteves, Yubo Wang, Deep M. Jariwala, Eric A. Stach, Roy H. Olsson III

Abstract: Aluminum scandium nitride (AlScN) ferroelectrics are promising for next-generation non-volatile memory applications due to their high remnant polarization as well as fast switching and scalability to nanometer thicknesses. As device dimensions shrink, the coercive field in ultra-thin ferroelectric films increases, which challenges low-voltage operation. We demonstrate that interfacial engineering… ▽ More Aluminum scandium nitride (AlScN) ferroelectrics are promising for next-generation non-volatile memory applications due to their high remnant polarization as well as fast switching and scalability to nanometer thicknesses. As device dimensions shrink, the coercive field in ultra-thin ferroelectric films increases, which challenges low-voltage operation. We demonstrate that interfacial engineering through bottom electrode selection and strain management reduces this coercive field increase and improves ferroelectric performance. Robust ferroelectricity is observed in ultra-thin AlScN capacitors deposited on a Sc bottom electrode under both alternating current and direct current conditions. The coercive field is reduced by over 20 percent compared to capacitors with an Al bottom electrode. Furthermore, dynamic switching behavior is analyzed using the KAI model. At low frequencies (less than 16.7 kHz), capacitors with Sc and Al bottom electrodes exhibit comparable KAI exponents (0.036 and 0.028, respectively), indicating similar switching kinetics. However, at higher frequencies, the capacitor with an Al bottom electrode shows a significantly higher exponent (0.093), indicating stronger frequency dependence, whereas the capacitor with a Sc bottom electrode maintains a stable exponent of 0.036. Scanning Electron Nanobeam Diffraction is used to measure strain differences in AlScN thin films grown on templates with different lattice mismatch, revealing a correlation between lattice mismatch, film strain, and switching behavior in ultra-thin films. △ Less

Submitted 11 June, 2025; originally announced June 2025.

Comments: 27 pages with four figures of manuscript with 10 pages of supporting information. This work has been submitted to ACS Nano

Demonstration of highly scaled AlScN ferroelectric diode memory with storage density > 100 Mbit/mm$^2$

Authors: Zekun Hu, Hyunmin Cho, Rajeev Kumar Rai, Kefei Bao, Yinuo Zhang, Yunfei He, Yaoyang Ji, Chloe Leblanc, Kwan-Ho Kim, Zirun Han, Zhen Qiu, Xingyu Du, Eric A. Stach, Roy Olsson, Deep Jariwala

Abstract: Wurtzite nitride ferroelectric materials have emerged as promising candidates for next-generation memory applications due to their exceptional polarization properties and compatibility with conventional semiconductor processing techniques. Here, we demonstrate the first successful scaling of Aluminum Scandium Nitride (AlScN) ferroelectric diode (FeDiode) memory down to 50 nm device diameters while… ▽ More Wurtzite nitride ferroelectric materials have emerged as promising candidates for next-generation memory applications due to their exceptional polarization properties and compatibility with conventional semiconductor processing techniques. Here, we demonstrate the first successful scaling of Aluminum Scandium Nitride (AlScN) ferroelectric diode (FeDiode) memory down to 50 nm device diameters while maintaining functional performance. Using a 20 nm Al0.64Sc0.36N ferroelectric layer, we investigate both metal-insulator-ferroelectric-metal (MIFM) and metal-ferroelectric-metal (MFM) architectures to optimize device performance. Our scaled devices exhibit a previously unreported size-dependent behavior, where switching voltage decreases while breakdown field increases with miniaturization, resulting in an enhanced breakdown-to-coercive field ratio exceeding 2.6 for the smallest structures. This favorable scaling behavior enables reliable operation at reduced dimensions critical for high-density applications. The MIFM devices demonstrate stable 3-bit non-volatile multistate behavior with clearly distinguishable resistance states and retention exceeding $5\times 10^5$ seconds. This combination of scalability and simple structure enables an effective memory density of 100 Mbit/mm$^2$ under feature size of 50 nm. By achieving 50 nm scaling with enhanced performance metrics, this work establishes AlScN-based FeDiode memory as a highly promising platform for next-generation non-volatile storage with potential for direct integration into CMOS technology. △ Less

Submitted 17 April, 2025; originally announced April 2025.

Comments: 4 figures and 1 table

Broadband Light Harvesting from Scalable Two-Dimensional Semiconductor Heterostructures

Authors: Da Lin, Jason Lynch, Sudong Wang, Zekun Hu, Rajeev Kumar Rai, Huairuo Zhang, Chen Chen, Shalini Kumari, Eric Stach, Albert V. Davydov, Joan M. Redwing, Deep Jariwala

Abstract: Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that maximize absorption using surface plasmons and/or Fabry-Perot cavities, which limits the weight efficiency of the device. Here, we show the theoretical and experime… ▽ More Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that maximize absorption using surface plasmons and/or Fabry-Perot cavities, which limits the weight efficiency of the device. Here, we show the theoretical and experimental realization of an unpatterned/planar semiconductor thin-film absorber based on monolayer transition metal dichalcogenides (TMDCs). We experimentally demonstrate an average total absorption in the visible range (450 nm - 700 nm) of > 70% using > 4 nm of semiconductor absorbing materials scalable over large areas with vapor phase growth techniques. Our analysis suggests that a power conversion efficiency (PCE) of 15.54% and a specific power > 300 W g^-1 may be achieved in a photovoltaic cell based on this metamaterial absorber. △ Less

Submitted 6 July, 2024; originally announced July 2024.

Epitaxial growth and magnetic properties of kagome metal FeSn/elemental ferromagnet heterostructures

Authors: Prajwal M. Laxmeesha, Tessa D. Tucker, Rajeev Kumar Rai, Shuchen Li, Myoung-Woo Yoo, Eric A. Stach, Axel Hoffmann, Steven J. May

Abstract: Binary kagome compounds TmXn (T = Mn, Fe, Co; X = Sn, Ge; m:n = 3:1, 3:2, 1:1) have garnered recent interest owing to the presence of both topological band crossings and flat bands arising from the geometry of the metal-site kagome lattice. To exploit these electronic features for potential applications in spintronics, the growth of high quality heterostructures is required. Here we report the syn… ▽ More Binary kagome compounds TmXn (T = Mn, Fe, Co; X = Sn, Ge; m:n = 3:1, 3:2, 1:1) have garnered recent interest owing to the presence of both topological band crossings and flat bands arising from the geometry of the metal-site kagome lattice. To exploit these electronic features for potential applications in spintronics, the growth of high quality heterostructures is required. Here we report the synthesis of Fe/FeSn and Co/FeSn bilayers on Al2O3 substrates using molecular beam epitaxy to realize heterointerfaces between elemental ferromagnetic metals and antiferromagnetic kagome metals. Structural characterization using high-resolution X-ray diffraction, reflection high-energy electron diffraction, and electron microscopy reveals the FeSn films are flat and epitaxial. Rutherford backscattering spectroscopy was used to confirm the stoichiometric window where the FeSn phase is stabilized, while transport and magnetometry measurements were conducted to verify metallicity and magnetic ordering in the films. Exchange bias was observed, confirming the presence of antiferromagnetic order in the FeSn layers, paving the way for future studies of magnetism in kagome heterostructures and potential integration of these materials into devices. △ Less

Submitted 21 January, 2024; originally announced January 2024.

Comments: The following article has been submitted to the Journal of Applied Physics

Large electro-opto-mechanical coupling in VO2 neuristors

Authors: Upanya Khandelwal, Rama Satya Sandilya, Rajeev Kumar Rai, Deepak Sharma, Smruti Rekha Mahapatra, Debasish Mondal, Navakanta Bhat, Naga Phani Aetkuri, Sushobhan Avasthi, Saurabh Chandorkar, Pavan Nukala

Abstract: Biological neurons are electro-mechanical systems, where the generation and propagation of an action potential is coupled to generation and transmission of an acoustic wave. Neuristors, such as VO2, characterized by insulator-metal transition (IMT) and negative differential resistance, can be engineered as self-oscillators, which are good approximations of biological neurons in the domain of elect… ▽ More Biological neurons are electro-mechanical systems, where the generation and propagation of an action potential is coupled to generation and transmission of an acoustic wave. Neuristors, such as VO2, characterized by insulator-metal transition (IMT) and negative differential resistance, can be engineered as self-oscillators, which are good approximations of biological neurons in the domain of electrical signals. In this study, we show that these self-oscillators are coupled electro-opto-mechanical systems, with better energy conversion coefficients than the conventional electromechanical or electrooptical materials. This is due to the significant contrast in the material's resistance, optical refractive index and density across the induced temperature range in a Joule heating driven IMT. We carried out laser interferometry to measure the opto-mechanical response while simultaneously driving the devices electrically into self-oscillations of different kinds. We analyzed films of various thicknesses, engineered device geometry and performed analytical modelling to decouple the effects of refractive index change vis-a-vis mechanical strain in the interferometry signal. We show that the effective piezoelectric coefficient (d13*) for our neuristor devices is 660 pm/V, making them viable alternatives to Pb-based piezoelectrics for MEMS applications. Furthermore, we show that the effective electro-optic coefficient (r13*) is ~22 nm/V, which is much larger than that in thin-film and bulk Pockels materials. △ Less

Submitted 25 June, 2023; originally announced June 2023.

Comments: 37 pages, 20 Figures

Giant electromechanical response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si 100

Authors: Sandeep Vura, Shubham Kumar Parate, Subhajit Pal, Upanya Khandelwal, Rajeev Kumar Rai, Sri Harsha Molleti, Vishnu Kumar, Rama Satya Sandilya Ventrapragada, Girish Patil, Mudit Jain, Ambresh Mallya, Majid Ahmadi, Bart Kooi, Sushobhan Avasthi, Rajeev Ranjan, Srinivasan Raghavan, Saurabh Chandorkar, Pavan Nukala

Abstract: Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values o… ▽ More Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values of electrostrictive strain coefficients (M31) at frequencies as large as 5 kHz (1.04 x 10-14 m2 per V2 at 1 kHz, and 3.87 x 10-15 m2 per V2 at 5 kHz) using A-site and oxygen-deficient barium titanate thin-films, epitaxially integrated onto Si. The effect is robust and retained even after cycling the devices >5000 times. Our perovskite films are non-ferroelectric, exhibit a different symmetry compared to stoichiometric BaTiO3 and are characterized by twin boundaries and nano polar-like regions. We show that the dielectric relaxation arising from the defect-induced features correlates very well with the observed giant electrostrictive response. These films show large coefficient of thermal expansion (2.36 x 10-5/K), which along with the giant M31 implies a considerable increase in the lattice anharmonicity induced by the defects. Our work provides a crucial step forward towards formulating guidelines to engineer large electromechanical responses even at higher frequencies in lead-free thin films. △ Less

Submitted 6 March, 2023; originally announced March 2023.

Comments: 26 pages, 4 figures, 8 supplementary figures

Modulation-Doping a Correlated Electron Insulator

Authors: Debasish Mondal, Smruti Rekha Mahapatra, Abigail M Derrico, Rajeev Kumar Rai, Jay R Paudel, Christoph Schlueter, Andrei Gloskovskii, Rajdeep Banerjee, Frank M F DeGroot, Dipankar D Sarma, Awadhesh Narayan, Pavan Nukala, Alexander X Gray, Naga Phani B Aetukuri

Abstract: Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2 - especially without inducing structural changes - has been a long-standing challenge. In this work, we design and synthesize modu… ▽ More Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2 - especially without inducing structural changes - has been a long-standing challenge. In this work, we design and synthesize modulation-doped VO2-based thin film heterostructures that closely emulate a textbook example of filling control in a correlated electron insulator. Using a combination of charge transport, hard x-ray photoelectron spectroscopy, and structural characterization, we show that the insulating state can be doped to achieve carrier densities greater than 5x10^21 cm^(-3) without inducing any measurable structural changes. We find that the MIT temperature (T_MIT) continuously decreases with increasing carrier concentration. Remarkably, the insulating state is robust even at doping concentrations as high as ~0.2 e-/vanadium. Finally, our work reveals modulation-doping as a viable method for electronic control of phase transitions in correlated electron oxides with the potential for use in future devices based on electric-field controlled phase transitions. △ Less

Submitted 7 January, 2023; originally announced January 2023.

Comments: Main paper 21 pages, 5 Figures. Supporting Information, 18 Pages,15 SI Figures and 1 SI Section

Constructive comparison in bidding combinatorial games

Authors: Prem Kant, Urban Larsson, Ravi K. Rai, Akshay V. Upasany

Abstract: A class of discrete Bidding Combinatorial Games that generalize alternating normal play was introduced by Kant, Larsson, Rai, and Upasany (2022). The major questions concerning optimal outcomes were resolved. By generalizing standard game comparison techniques from alternating normal play, we propose an algorithmic play-solution to the problem of game comparison for bidding games. We demonstrate s… ▽ More A class of discrete Bidding Combinatorial Games that generalize alternating normal play was introduced by Kant, Larsson, Rai, and Upasany (2022). The major questions concerning optimal outcomes were resolved. By generalizing standard game comparison techniques from alternating normal play, we propose an algorithmic play-solution to the problem of game comparison for bidding games. We demonstrate some consequences of this result that generalize classical results in alternating play (from Winning Ways 1982 and On Numbers and Games 1976). In particular, integers, dyadics and numbers have many nice properties, such as group structures, but on the other hand the game * is non-invertible. We state a couple of thrilling conjectures and open problems for readers to dive into this promising path of bidding combinatorial games. △ Less

Submitted 30 October, 2023; v1 submitted 23 July, 2022; originally announced July 2022.

Comments: 23 pages, 1 figure

MSC Class: 91A46; 91A05

Bidding combinatorial games

Authors: Prem Kant, Urban Larsson, Ravi K. Rai, Akshay V. Upasany

Abstract: Combinatorial Game Theory is a branch of mathematics and theoretical computer science that studies sequential 2-player games with perfect information. Normal play is the convention where a player who cannot move loses. Here, we generalize the classical alternating normal play to infinitely many game families, by means of discrete Richman auctions (Develin et al. 2010, Larsson et al. 2021, Lazarus… ▽ More Combinatorial Game Theory is a branch of mathematics and theoretical computer science that studies sequential 2-player games with perfect information. Normal play is the convention where a player who cannot move loses. Here, we generalize the classical alternating normal play to infinitely many game families, by means of discrete Richman auctions (Develin et al. 2010, Larsson et al. 2021, Lazarus et al. 1996). We generalize the notion of a perfect play outcome, and find an exact characterization of outcome feasibility. As a main result, we prove existence of a game form for each such outcome class; then we describe their lattice structures. By imposing restrictions to the general families, such as impartial and {\em symmetric termination}, we find surprising analogies with alternating play. △ Less

Submitted 30 October, 2023; v1 submitted 17 July, 2022; originally announced July 2022.

Comments: 5 figures

MSC Class: 91A46; 91A05

Discrete Richman-bidding Scoring Games

Authors: Urban Larsson, Neel Patel, Ravi Kant Rai

Abstract: We study zero-sum (combinatorial) games, within the framework of so-called Richman auctions (Lazarus et al. 1996) namely, we modify the alternating play scoring ruleset Cumulative Subtraction (CS) (Cohensius et al. 2019), to a discrete bidding scheme (similar to Develin and Payne 2010). Players bid to move and the player with the highest bid wins the move, and hands over the winning bidding amount… ▽ More We study zero-sum (combinatorial) games, within the framework of so-called Richman auctions (Lazarus et al. 1996) namely, we modify the alternating play scoring ruleset Cumulative Subtraction (CS) (Cohensius et al. 2019), to a discrete bidding scheme (similar to Develin and Payne 2010). Players bid to move and the player with the highest bid wins the move, and hands over the winning bidding amount to the other player. The new game is dubbed Bidding Cumulative Subtraction (BCS). In so-called unitary games, players remove exactly one item out of a single heap of identical items, until the heap is empty, and their actions contribute to a common score, which increases or decreases by one unit depending on whether the maximizing player won the turn or not. We show that there is a unique bidding equilibrium for a much larger class of games, that generalize standard scoring play in the literature. We prove that for all sufficiently large heap sizes, the equilibrium outcomes of unitary BCS are eventually periodic, with period 2, and we show that the periodicity appears at the latest for heaps of sizes quadratic in the total budget. △ Less

Submitted 12 March, 2020; originally announced March 2020.

Comments: 26 Pages, 6 figures

MSC Class: 91A46; 11B75; 91A05

Modeling anomalous extinction using nanodiamonds

Authors: Rakesh K Rai, Shantanu Rastogi

Abstract: Modeling extinction along anomalous/non-CCM sightlines, which are characterized by a broad $217.5 nm$ bump and steep far-ultraviolet (FUV) rise, is reported. The extinction along these sightlines, viz. {HD 210121}, {HD 204827}, {HD 29647} and {HD 62542}, is difficult to reproduce using standard silicate and graphite grains. Very good match with the observed extinction is obtained by considering na… ▽ More Modeling extinction along anomalous/non-CCM sightlines, which are characterized by a broad $217.5 nm$ bump and steep far-ultraviolet (FUV) rise, is reported. The extinction along these sightlines, viz. {HD 210121}, {HD 204827}, {HD 29647} and {HD 62542}, is difficult to reproduce using standard silicate and graphite grains. Very good match with the observed extinction is obtained by considering nanodiamond component as part of carbonaceous matter. Most of these sightlines are rich in carbon and are invariably backed by a young hot stellar object. Nanodiamond is taken as core within amorphous carbon and graphite. These core-mantle particles taken as additional components along with graphite and silicates lead to reduction in the silicate requirement. The abundance of carbonaceous matter is not affected as a very small fraction of nanodiamond is required. Extinction along sightlines that show steep FUV is also reported demonstrating the importance of nanodiamond component in all such regions. △ Less

Submitted 4 January, 2013; v1 submitted 14 April, 2012; originally announced April 2012.

Comments: 16 pages, 2 Tables and 3 Figures

The scattering and extinction properties of nanodiamonds

Authors: Rakesh K Rai, Shantanu Rastogi

Abstract: The study of scattering and extinction properties of possible nanodiamond grains in the ISM are reported. Calculations using Discrete Dipole Approximation (DDA) for varying ellipsoidal shapes and sizes from 2.5 to $10 nm$ are considered. Nanodiamonds show negligible extinction from IR to near-UV and very sharp far-UV rise. Comparison with observations rule out possibility of independent nanodiam… ▽ More The study of scattering and extinction properties of possible nanodiamond grains in the ISM are reported. Calculations using Discrete Dipole Approximation (DDA) for varying ellipsoidal shapes and sizes from 2.5 to $10 nm$ are considered. Nanodiamonds show negligible extinction from IR to near-UV and very sharp far-UV rise. Comparison with observations rule out possibility of independent nanodiamond dust but point towards possibility of nanodiamonds as a component in the ISM. Radiation induced transformations may lead to carbonaceous grains with different core and mantles. So calculations are also performed for a core-mantle target model with nanodiamond core in graphite mantles. The graphite extinction features get modified with the peak at 2175 Å being lowered, broadened, blue shifted and accompanied by enhanced extinction in the far-UV. Such variations in the 2175 Å band and simultaneous far-UV rise are observed along some sources. A three component dust model incorporating silicate, graphite and graphite with nanodiamond core is also considered. The model extinction compares very well with the average galactic extinction in the complete range from 0.2 to $10 μm^{-1}$. The best fit requires small size and small number of nanodiamonds. △ Less

Submitted 2 November, 2009; originally announced November 2009.

Comments: Accepted for publication in MNRAS; 8 Figures