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Dynamical Mean-Field Theory for spin-dependent electron transport in spin-valve devices
Authors:
Andrea Droghetti,
Milos M. Radonjić,
Liviu Chioncel,
Ivan Rungger
Abstract:
We present the combination of Density Functional Theory (DFT) and Dynamical Mean Field Theory (DMFT) for computing the electron transmission through two-terminals nanoscale devices. The method is then applied to metallic junctions presenting alternating Cu and Co layers, which exhibit spin-dependent charge transport and giant magnetoresistance (GMR) effect. The calculations show that the coherent…
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We present the combination of Density Functional Theory (DFT) and Dynamical Mean Field Theory (DMFT) for computing the electron transmission through two-terminals nanoscale devices. The method is then applied to metallic junctions presenting alternating Cu and Co layers, which exhibit spin-dependent charge transport and giant magnetoresistance (GMR) effect. The calculations show that the coherent transmission through the $3d$ states is greatly suppressed by electron correlations. This is mainly due to the finite lifetime induced by the electron-electron interaction and is directly related to the imaginary part of the computed many-body DMFT self-energy. At the Fermi energy, where in accordance with the Fermi-liquid behavior the imaginary part of the self-energy vanishes, the suppression of the transmission is entirely due to the shifts of the energy spectrum induced by electron correlations. Based our results, we finally suggest that the GMR measured in Cu/Co heterostructures for electrons with energies about 1 eV above the Fermi energy is a clear manifestation of dynamical correlation effects.
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Submitted 14 July, 2022; v1 submitted 31 January, 2022;
originally announced January 2022.
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The DFT+$Σ_2$ method for electron correlation effects at transition metal surfaces
Authors:
Andrea Droghetti,
Miloš M. Radonjić,
Anita Halder,
Ivan Rungger,
Liviu Chioncel
Abstract:
We present a computational approach for electronically correlated metallic surfaces and interfaces, which combines Density Functional and Dynamical Mean Field Theory using a multi-orbital perturbative solver for the many-body problem. Our implementation is designed to describe ferromagnetic metallic thin films on a substrate. The performances are assessed in detail for a Fe monolayer on a W(110) s…
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We present a computational approach for electronically correlated metallic surfaces and interfaces, which combines Density Functional and Dynamical Mean Field Theory using a multi-orbital perturbative solver for the many-body problem. Our implementation is designed to describe ferromagnetic metallic thin films on a substrate. The performances are assessed in detail for a Fe monolayer on a W(110) substrate, a prototypical nanoscale magnetic system. Comparing our results to photoemission data, we find qualitative and quantitative improvements in the calculated spectral function with respect to the results of Density Functional Theory within the local spin density approximation. In particular, the spin-splitting of the $d$ states is drastically reduced and, at the same time, their spectral width becomes narrower. The method is therefore able to account for the main correlation effects in the system.
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Submitted 27 January, 2022; v1 submitted 12 October, 2021;
originally announced October 2021.
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Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system
Authors:
A. A. Shashkin,
M. Yu. Melnikov,
V. T. Dolgopolov,
M. M. Radonjić,
V. Dobrosavljević,
S. -H. Huang,
C. W. Liu,
Amy Y. X. Zhu,
S. V. Kravchenko
Abstract:
The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature $T_{\text{max}}$, at which the resistivity exhibits a maximum, is…
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The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature $T_{\text{max}}$, at which the resistivity exhibits a maximum, is close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value $T_{\text{max}}$ decreases appreciably for spinless electrons in spin-polarizing (parallel) magnetic fields. The observed behaviour of $T_{\text{max}}$ cannot be described by existing theories. The results indicate the spin-related origin of the effect.
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Submitted 24 March, 2022; v1 submitted 10 June, 2021;
originally announced June 2021.
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Quantum critical scaling for finite temperature Mott-like metal-insulator crossover in a few layered-MoS$_2$
Authors:
Byoung Hee Moon,
Gang Hee Han,
Miloš M. Radonjić,
Hyunjin Ji,
Vladimir Dobrosavljević
Abstract:
The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still lacking. Here, we examine the finite-temperature transport behavior of a few layered-MoS$_2$ material in the vicinity of the density-driven metal-insulator transition…
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The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still lacking. Here, we examine the finite-temperature transport behavior of a few layered-MoS$_2$ material in the vicinity of the density-driven metal-insulator transition (MIT), revealing previously overlooked universal features characteristic of strongly correlated electron systems. Our scaling analysis, based on the Wigner-Mott theoretical viewpoint, conclusively demonstrates that the transition is driven by strong electron-electron interactions and not disorder, in striking resemblance to what is seen in other Mott systems. Our results provide compelling evidence that transition-metal dichalcogenides provide an ideal testing ground for the study of strong correlation physics, which should open an exciting avenue for future research, making a parallel with recent advances in twisted bilayer graphene
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Submitted 11 November, 2019; v1 submitted 7 November, 2019;
originally announced November 2019.
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On the superconducting nature of the Bi-II phase of elemental Bismuth
Authors:
Rustem Khasanov,
Miloš M. Radonjić,
Hubertus Luetkens,
Elvezio Morenzoni,
Gediminas Simutis,
Stephan Schönecker,
Wilhelm H. Appelt,
Andreas Östlin,
Liviu Chioncel,
Alex Amato
Abstract:
The superconductivity in the Bi-II phase of elemental Bismuth (transition temperature $T_{\rm c}\simeq3.92$ K at pressure $p\simeq 2.80$ GPa) was studied experimentally by means of the muon-spin rotation as well as theoretically by using the Eliashberg theory in combination with Density Functional Theory calculations. Experiments reveal that Bi-II is a type-I superconductor with a zero temperature…
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The superconductivity in the Bi-II phase of elemental Bismuth (transition temperature $T_{\rm c}\simeq3.92$ K at pressure $p\simeq 2.80$ GPa) was studied experimentally by means of the muon-spin rotation as well as theoretically by using the Eliashberg theory in combination with Density Functional Theory calculations. Experiments reveal that Bi-II is a type-I superconductor with a zero temperature value of the thermodynamic critical field $B_{\rm c}(0)\simeq31.97$~mT. The Eliashberg theory approach provides a good agreement with the experimental $T_{\rm c}$ and the temperature evolution of $B_{\rm c}$. The estimated value for the retardation (coupling) parameter $k_{\rm B}T_{\rm c}/ω_{\rm ln} \approx 0.07$ ($ω_{\rm ln}$ is the logarithmically averaged phonon frequency) suggests that Bi-II is an intermediately-coupled superconductor.
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Submitted 25 February, 2019;
originally announced February 2019.
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Predicting the conductance of strongly correlated molecules: the Kondo effect in perchlorotriphenylmethyl/Au junctions
Authors:
W. H. Appelt,
A. Droghetti,
L. Chioncel,
M. M. Radonjic,
E. Munoz,
S. Kirchner,
D. Vollhardt,
I. Rungger
Abstract:
Stable organic radicals integrated into molecular junctions represent a practical realization of the single-orbital Anderson impurity model. Motivated by recent experiments for perchlorotriphenylmethyl (PTM) molecules contacted to gold electrodes, we develop a method that combines density functional theory (DFT), quantum transport theory, numerical renormalization group (NRG) calculations and reno…
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Stable organic radicals integrated into molecular junctions represent a practical realization of the single-orbital Anderson impurity model. Motivated by recent experiments for perchlorotriphenylmethyl (PTM) molecules contacted to gold electrodes, we develop a method that combines density functional theory (DFT), quantum transport theory, numerical renormalization group (NRG) calculations and renormalized super-perturbation theory (rSPT) to compute both equilibrium and non-equilibrium properties of strongly correlated nanoscale systems at low temperatures effectively from first principles. We determine the possible atomic structures of the interfaces between the molecule and the electrodes, which allow us to estimate the Kondo temperature and the characteristic transport properties, which compare well with experiments. By using the non-equilibrium rSPT results we assess the range of validity of equilibrium DFT+NRG-based transmission calculations for the evaluation of the finite voltage conductance. The results demonstrate that our method can provide qualitative insights into the properties of molecular junctions when the molecule-metal contacts are amorphous or generally ill-defined, and that it can further give a fully quantitative description when the experimental contact structures are well characterized.
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Submitted 15 September, 2018;
originally announced September 2018.
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Phonon anomalies in FeS
Authors:
A. Baum,
A. Milosavljević,
N. Lazarević,
M. M. Radonjić,
B. Nikolić,
M. Mitschek,
Z. Inanloo Maranloo,
M. Šćepanović,
M. Grujuić-Brojčin,
N. Stojilović,
M. Opel,
Aifeng Wang,
C. Petrovic,
Z. V. Popović,
R. Hackl
Abstract:
We present results from light scattering experiments on tetragonal FeS with the focus placed on lattice dynamics. We identify the Raman active A1g and B1g phonon modes, a second order scattering process involving two acoustic phonons, and contributions from potentially defect-induced scattering. The temperature dependence between 300 and 20K of all observed phonon energies is governed by the latti…
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We present results from light scattering experiments on tetragonal FeS with the focus placed on lattice dynamics. We identify the Raman active A1g and B1g phonon modes, a second order scattering process involving two acoustic phonons, and contributions from potentially defect-induced scattering. The temperature dependence between 300 and 20K of all observed phonon energies is governed by the lattice contraction. Below 20K the phonon energies increase by 0.5-1 cm$^{-1}$ thus indicating putative short range magnetic order. Along with the experiments we performed lattice-dynamical simulations and a symmetry analysis for the phonons and potential overtones and find good agreement with the experiments. In particular, we argue that the two-phonon excitation observed in a gap between the optical branches becomes observable due to significant electron-phonon interaction.
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Submitted 13 February, 2018; v1 submitted 7 December, 2017;
originally announced December 2017.
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Small influence of magnetic ordering on lattice dynamics in TaFe$_{1.25}$Te$_3$
Authors:
M. Opačić,
N. Lazarević,
D. Tanasković,
M. M. Radonjić,
A. Milosavljević,
Yongchang Ma,
C. Petrovic,
Z. V. Popović
Abstract:
Raman scattering spectra of zigzag spin chain TaFe$_{1.25}$Te$_3$ single crystal are presented in a temperature range from 80 to 300 K. Nine Raman active modes of $A_g$ and $B_g$ symmetry are clearly observed and assigned by probing different scattering channels, which is confirmed by lattice dynamics calculations. Temperature dependence of the Raman modes linewidth is mainly governed by the latti…
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Raman scattering spectra of zigzag spin chain TaFe$_{1.25}$Te$_3$ single crystal are presented in a temperature range from 80 to 300 K. Nine Raman active modes of $A_g$ and $B_g$ symmetry are clearly observed and assigned by probing different scattering channels, which is confirmed by lattice dynamics calculations. Temperature dependence of the Raman modes linewidth is mainly governed by the lattice anharmonicity. The only deviation from the conventional behavior is observed for $A_g$ symmetry modes in a vicinity of the magnetic phase transition at $T_N \approx 200$ K. This implies that the electron-phonon interaction weakly changes with temperature and magnetic ordering, whereas small changes in the spectra near the critical temperature can be ascribed to spin fluctuations.
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Submitted 17 November, 2017;
originally announced November 2017.
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Raman spectroscopy of K_xCo_{2-y}Se_2 single crystals near the ferromagnet-paramagnet transition
Authors:
M. Opačić,
N. Lazarević,
M. M. Radonjić,
M. Šćepanović,
Hyejin Ryu,
Aifeng Wang,
D. Tanasković,
C. Petrovic,
Z. V. Popović
Abstract:
Polarized Raman scattering spectra of the K_xCo_{2-y}Se_2 single crystals reveal the presence of two phonon modes, assigned as of the A_{1g} and B_{1g} symmetry. Absence of additional modes excludes the possibility of vacancy ordering, unlike in K_xFe_{2-y}Se_2. The ferromagnetic (FM) phase transition at T_c\approx 74 K leaves a clear fingerprint on the temperature dependence of the Raman mode ene…
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Polarized Raman scattering spectra of the K_xCo_{2-y}Se_2 single crystals reveal the presence of two phonon modes, assigned as of the A_{1g} and B_{1g} symmetry. Absence of additional modes excludes the possibility of vacancy ordering, unlike in K_xFe_{2-y}Se_2. The ferromagnetic (FM) phase transition at T_c\approx 74 K leaves a clear fingerprint on the temperature dependence of the Raman mode energy and linewidth. For T>T_c the temperature dependence looks conventional, driven by the thermal expansion and anharmonicity. The Raman modes are rather broad due to the electron-phonon coupling increased by the disorder and spin fluctuation effects. In the FM phase the phonon frequency of both modes increases, while an opposite trend is seen in their linewidth: the A_{1g} mode narrows in the FM phase, whereas the B_{1g} mode broadens. We argue that the large asymmetry and anomalous frequency shift of the B_{1g} mode is due to the coupling of spin fluctuations and vibration. Our density functional theory (DFT) calculations for the phonon frequencies agree rather well with the Raman measurements, with some discrepancy being expected since the DFT calculations neglect the spin fluctuations.
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Submitted 10 October, 2016; v1 submitted 19 May, 2016;
originally announced May 2016.
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Transmission through correlated Cu$_n$CoCu$_n$ heterostructures
Authors:
L. Chioncel,
C. Morari,
A. Östlin,
W. H. Appelt,
A. Droghetti,
M. M. Radonjić,
I. Rungger,
L. Vitos,
U. Eckern,
A. V. Postnikov
Abstract:
The effects of local electronic interactions and finite temperatures upon the transmission across the Cu$_4$CoCu$_4$ metallic heterostructure are studied in a combined density functional and dynamical mean field theory. It is shown that, as the electronic correlations are taken into account via a local but dynamic self-energy, the total transmission at the Fermi level gets reduced (predominantly i…
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The effects of local electronic interactions and finite temperatures upon the transmission across the Cu$_4$CoCu$_4$ metallic heterostructure are studied in a combined density functional and dynamical mean field theory. It is shown that, as the electronic correlations are taken into account via a local but dynamic self-energy, the total transmission at the Fermi level gets reduced (predominantly in the minority spin channel), whereby the spin polarization of the transmission increases. The latter is due to a more significant $d$-electrons contribution, as compared to the non-correlated case in which the transport is dominated by $s$ and $p$ electrons.
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Submitted 24 April, 2015;
originally announced April 2015.
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Phonon and magnetic dimer excitations in Fe-based S=2 spin ladder compound BaFe$_2$Se$_2$O
Authors:
Z. V. Popović,
M. Šćepanović,
N. Lazarević,
M. M. Radonjić,
D. Tanasković,
Hechang Lei,
C. Petrovic
Abstract:
Raman scattering spectra of new Fe-based S=2 spin ladder compound BaFe$_2$Se$_2$O are measured in a temperature range between 15 K and 623 K. All six A$_{1g}$ and two B$_{1g}$ Raman active modes of BaFe$_2$Se$_2$O, predicted by the factor-group analysis, have been experimentally observed at energies that are in a rather good agreement with the lattice dynamics calculation. The antiferromagnetic lo…
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Raman scattering spectra of new Fe-based S=2 spin ladder compound BaFe$_2$Se$_2$O are measured in a temperature range between 15 K and 623 K. All six A$_{1g}$ and two B$_{1g}$ Raman active modes of BaFe$_2$Se$_2$O, predicted by the factor-group analysis, have been experimentally observed at energies that are in a rather good agreement with the lattice dynamics calculation. The antiferromagnetic long-range spin ordering in BaFe$_2$Se$_2$O below $T_N$=240 K leaves a fingerprint both in the A$_{1g}$ and B$_{1g}$ phonon mode linewidth and energy. In the energy range between 400 and 650 cm$^{-1}$ we have observed magnetic excitation related structure in the form of magnon continuum, with the peaks corresponding to the singularities in the one dimensional density of magnon states. The onset value of magnetic continuum (2$Δ_{S}$) is found at about 437 cm$^{-1}$ at 15 K. The magnetic continuum disappears at about 623 K, which lead us to conclude that the short-range magnetic ordering in BaFe$_2$Se$_2$O exists apparently up to 2.6$T_N$.
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Submitted 24 December, 2013;
originally announced December 2013.
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Wigner-Mott scaling of transport near the two-dimensional metal-insulator transition
Authors:
M. M. Radonjic,
D. Tanaskovic,
V. Dobrosavljevic,
K. Haule,
G. Kotliar
Abstract:
Electron-electron scattering usually dominates the transport in strongly correlated materials. It typically leads to pronounced resistivity maxima in the incoherent regime around the coherence temperature $T^{*}$, reflecting the tendency of carriers to undergo Mott localization following the demise of the Fermi liquid. This behavior is best pronounced in the vicinity of interaction-driven (Mott-li…
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Electron-electron scattering usually dominates the transport in strongly correlated materials. It typically leads to pronounced resistivity maxima in the incoherent regime around the coherence temperature $T^{*}$, reflecting the tendency of carriers to undergo Mott localization following the demise of the Fermi liquid. This behavior is best pronounced in the vicinity of interaction-driven (Mott-like) metal-insulator transitions, where the $T^{*}$ decreases, while the resistivity maximum $ρ_{max}$ increases. Here we show that, in this regime, the entire family of resistivity curves displays a characteristic scaling behavior $ρ(T)/ρ_{max}\approx F(T/T_{max}),$ while the $ρ_{max}$ and $T_{max}\sim T^{*}$ assume a powerlaw dependence on the quasi-particle effective mass $m^{*}$. Remarkably, precisely such trends are found from an appropriate scaling analysis of experimental data obtained from diluted two-dimensional electron gases in zero magnetic fields. Our analysis provides strong evidence that inelastic electron-electron scattering -- and not disorder effects -- dominates finite temperature transport in these systems, validating the Wigner-Mott picture of the two-dimensional metal-insulator transition.
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Submitted 1 March, 2012; v1 submitted 2 December, 2011;
originally announced December 2011.
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Lattice dynamics of FeSb2
Authors:
N. Lazarevic,
M. M. Radonjic,
D. Tanaskovic,
Rongwei Hu,
C. Petrovic,
Z. V. Popovic
Abstract:
The lattice dynamics of FeSb2 is investigated by the first-principles DFT calculations and Raman spectroscopy. All Raman and infra-red active phonon modes are properly assigned. The calculated and measured phonon energies are in good agreement except for the B3g symmetry mode. We have observed strong mixing of the Ag symmetry modes, with the intensity exchange in the temperature range between 210…
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The lattice dynamics of FeSb2 is investigated by the first-principles DFT calculations and Raman spectroscopy. All Raman and infra-red active phonon modes are properly assigned. The calculated and measured phonon energies are in good agreement except for the B3g symmetry mode. We have observed strong mixing of the Ag symmetry modes, with the intensity exchange in the temperature range between 210 K and 260 K. The Ag modes repulsion increases by doping FeSb2 with Co. There are no signatures of the electron-phonon interaction for these modes.
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Submitted 29 November, 2011; v1 submitted 1 August, 2011;
originally announced August 2011.
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Influence of disorder on incoherent transport near the Mott transition
Authors:
Milos M. Radonjic,
D. Tanaskovic,
V. Dobrosavljevic,
K. Haule
Abstract:
We calculate the optical and DC conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak in the optical conductivity persists even at temperatures when the resistivity is well beyond the semiclassical Mott-Ioffe-Regel limit. Local random potentia…
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We calculate the optical and DC conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak in the optical conductivity persists even at temperatures when the resistivity is well beyond the semiclassical Mott-Ioffe-Regel limit. Local random potential does not introduce new charge carriers, but it induces effective local carrier doping and broadens the bandwidth. This makes the system more metallic, in agreement with the recent experiments on X-ray irradiated charge-transfer salts.
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Submitted 1 March, 2010; v1 submitted 27 October, 2009;
originally announced October 2009.
