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Carbon Vacancy Formation in Binary Transition Metal Carbides from Density Functional Theory
Authors:
Mikael Råsander,
Anna Delin
Abstract:
We have investigated the trends in the formation of carbon vacancies in binary transition metal (TM) carbides using density functional calculations for two common TM carbide crystal structures, namely the B1 (rock-salt) and WC structure types. The TM are taken from group IV (Ti, Zr, Hf), V (V, Nb, Ta) and VI (Cr, Mo, W) of the periodic table, as well as Sc from group III. For B1-structured TM carb…
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We have investigated the trends in the formation of carbon vacancies in binary transition metal (TM) carbides using density functional calculations for two common TM carbide crystal structures, namely the B1 (rock-salt) and WC structure types. The TM are taken from group IV (Ti, Zr, Hf), V (V, Nb, Ta) and VI (Cr, Mo, W) of the periodic table, as well as Sc from group III. For B1-structured TM carbides, the general trend is that it is easier for C vacancies to be formed as the number of valence electrons in the system increases. The exception is ScC where C vacancies are rather easy to form. It is also clear that the formation of C vacancies depends on the growth conditions: For TM-rich conditions, B1-structured carbides will always favour C vacancy formation. For C-rich conditions it is energetically favourable to form C vacancies in ScC, VC, NbC, CrC, MoC and WC. Experimentally large C vacancy concentrations are found in B1-structured TM carbides and our calculations are in line with these observations. In fact, TiC, ZrC, HfC and TaC are the only B1-structured TM carbides that do not spontaneously favour C vacancies and then only for C-rich conditions. C vacancies may still be present in these systems, however, due to the high temperatures used when growing TM carbides. In the case of WC-structured TM carbides, C vacancy formation is not energetically favourable irrespective of the growth conditions, which is the reason why this structure is only found close to a one-to-one metal-to-carbon ratio. ...
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Submitted 21 August, 2018;
originally announced August 2018.
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Elastic constants of the II-IV nitride semiconductors MgSiN$_{2}$, MgGeN$_{2}$ and MgSnN$_{2}$
Authors:
Mikael Råsander,
Michelle A. Moram
Abstract:
The single crystal elastic constants, polycrystalline elastic moduli and related properties of orthorhombic MgSiN$_{2}$, MgGeN$_{2}$ and MgSnN$_{2}$ have been calculated using density functional theory and compared to the related wurtzite structured AlN, GaN and InN. Since there are no experimental studies of single crystal elastic properties of neither MgSiN$_{2}$, MgGeN$_{2}$ or MgSnN$_{2}$, we…
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The single crystal elastic constants, polycrystalline elastic moduli and related properties of orthorhombic MgSiN$_{2}$, MgGeN$_{2}$ and MgSnN$_{2}$ have been calculated using density functional theory and compared to the related wurtzite structured AlN, GaN and InN. Since there are no experimental studies of single crystal elastic properties of neither MgSiN$_{2}$, MgGeN$_{2}$ or MgSnN$_{2}$, we have established the accuracy of the calculations by comparison with experimental data for AlN, GaN and InN. The calculated polycrystalline elastic moduli of MgSiN$_{2}$ are found to be in good agreement with available experimental elastic moduli. It will be shown that MgSiN$_{2}$ and MgGeN$_{2}$ have a small $xy$-plane lattice mismatch with AlN and GaN, respectively, while at the same time being significantly softer than both AlN and GaN. This shows that MgSiN$_{2}$ and MgGeN$_{2}$ should be possible to be grown on AlN and GaN without significant lattice mismatch or strain.
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Submitted 18 April, 2018;
originally announced April 2018.
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On the thermal expansion in MgSiN$_{2}$
Authors:
Mikael Råsander,
Michelle A. Moram
Abstract:
The thermal expansion of the wide band gap semiconductor MgSiN$_{2}$ has been determined using density functional calculations in combination with the quasi-harmonic approximation. We find that the thermal expansion is rather small in good agreement with previous experimental studies. However, the present calculations suggest that the thermal expansion of the system is more isotropic. Additional t…
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The thermal expansion of the wide band gap semiconductor MgSiN$_{2}$ has been determined using density functional calculations in combination with the quasi-harmonic approximation. We find that the thermal expansion is rather small in good agreement with previous experimental studies. However, the present calculations suggest that the thermal expansion of the system is more isotropic. Additional thermodynamic properties such as the Gr{ü}neisen parameter and the heat capacity at constant pressure have also been determined and found to be in good agreement with available experiments.
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Submitted 19 October, 2017;
originally announced October 2017.
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Structure and lattice dynamics of the wide band gap semiconductors MgSiN$_{2}$ and MgGeN$_{2}$
Authors:
M. Råsander,
J. B. Quirk,
T. Wang,
S. Mathew,
R. Davies,
R. Palgrave,
M. A. Moram
Abstract:
We have determined the structural and lattice dynamical properties of the orthorhombic, wide band gap semiconductors MgSiN$_{2}$ and MgGeN$_{2}$ using density functional theory. In addition, we present structural properties and Raman spectra of a MgSiN$_{2}$ powder. The structural properties and lattice dynamics of the orthorhombic systems are compared to wurtzite AlN. We find clear differences in…
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We have determined the structural and lattice dynamical properties of the orthorhombic, wide band gap semiconductors MgSiN$_{2}$ and MgGeN$_{2}$ using density functional theory. In addition, we present structural properties and Raman spectra of a MgSiN$_{2}$ powder. The structural properties and lattice dynamics of the orthorhombic systems are compared to wurtzite AlN. We find clear differences in the lattice dynamics between MgSiN$_{2}$, MgGeN$_{2}$ and AlN, for example we find that the highest phonon frequency in MgSiN$_{2}$ is about 100~cm$^{-1}$ higher than the highest frequency in AlN and that MgGeN$_{2}$ is much softer. We also provide the Born effective charge tensors and dielectric tensors of MgSiN$_{2}$, MgGeN$_{2}$ and AlN. Phonon related thermodynamic properties, such as the heat capacity and entropy, are in very good agreement with available experimental results.
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Submitted 3 May, 2017;
originally announced May 2017.
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Electronic structure of the high and low pressure polymorphs of MgSiN$_{2}$
Authors:
Mikael Råsander,
Michelle A. Moram
Abstract:
We have performed density functional calculations on the group II-IV nitride MgSiN$_{2}$. At a pressure of about 20~GPa the ground state wurtzite derived MgSiN$_{2}$ structure (LP-MgSiN$_{2}$) transforms into a rock-salt derived structure (HP-MgSiN$_{2}$) in agreement with previous theoretical and experimental studies. Both phases are wide band gap semiconductors with indirect band gaps at equilib…
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We have performed density functional calculations on the group II-IV nitride MgSiN$_{2}$. At a pressure of about 20~GPa the ground state wurtzite derived MgSiN$_{2}$ structure (LP-MgSiN$_{2}$) transforms into a rock-salt derived structure (HP-MgSiN$_{2}$) in agreement with previous theoretical and experimental studies. Both phases are wide band gap semiconductors with indirect band gaps at equilibrium of 5.58 eV (LP-MgSiN$_{2}$) and 5.87 eV (HP-MgSiN$_{2}$), respectively. As the pressure increases, the band gaps become larger for both phases, however, the band gap in LP-MgSiN$_{2}$ increases faster than the gap in HP-MgSiN$_{2}$ and with a high enough pressure the band gap in LP-MgSiN$_{2}$ becomes larger than the band gap in HP-MgSiN$_{2}$.
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Submitted 2 May, 2016;
originally announced May 2016.
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Magnetism in Co$_{1-{\rm x}}$Fe$_{\rm x}$Sb$_{3}$ skutterudites from density functional theory
Authors:
Mikael Råsander,
Lars Bergqvist
Abstract:
We have investigated the electronic and magnetic properties of Co$_{1-{\rm x}}$Fe$_{\rm x}$Sb$_{3}$ skutterudites from density functional theory and Monte Carlo simulations. We find that above a certain threshold in the Fe concentration, somewhere between x=0.125 and x=0.25, Co$_{1-{\rm x}}$Fe$_{\rm x}$Sb$_{3}$ is ferromagnetic with an atomic moment which increases asymptotically towards about 1…
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We have investigated the electronic and magnetic properties of Co$_{1-{\rm x}}$Fe$_{\rm x}$Sb$_{3}$ skutterudites from density functional theory and Monte Carlo simulations. We find that above a certain threshold in the Fe concentration, somewhere between x=0.125 and x=0.25, Co$_{1-{\rm x}}$Fe$_{\rm x}$Sb$_{3}$ is ferromagnetic with an atomic moment which increases asymptotically towards about 1 $μ_{B}$/Fe and a non-zero Curie temperature which reaches 70 K for FeSb$_{3}$. Ferromagnetism is favored due to a Stoner instability in the electronic structure, where a large density of states at the Fermi-level makes it favorable to form the ferromagnetic ground state.
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Submitted 16 December, 2015;
originally announced December 2015.
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Resistive Graphene Humidity Sensors with Rapid and Direct Electrical Readout
Authors:
Anderson David Smith,
Karim Elgammal,
Frank Niklaus,
Anna Delin,
Andreas Fischer,
Sam Vaziri,
Fredrik Forsberg,
Mikael Råsander,
Håkan W. Hugosson,
Lars Bergqvist,
Stephan Schröder,
Satender Kataria,
Mikael Östling,
Max C. Lemme
Abstract:
We demonstrate humidity sensing using a change of electrical resistance of a single- layer chemical vapor deposited (CVD) graphene that is placed on top of a SiO2 layer on a Si wafer. To investigate the selectivity of the sensor towards the most common constituents in air, its signal response was characterized individually for water vapor (H2O), nitrogen (N2), oxygen (O2), and argon (Ar). In order…
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We demonstrate humidity sensing using a change of electrical resistance of a single- layer chemical vapor deposited (CVD) graphene that is placed on top of a SiO2 layer on a Si wafer. To investigate the selectivity of the sensor towards the most common constituents in air, its signal response was characterized individually for water vapor (H2O), nitrogen (N2), oxygen (O2), and argon (Ar). In order to assess the humidity sensing effect for a range from 1% relative humidity (RH) to 96% RH, devices were characterized both in a vacuum chamber and in a humidity chamber at atmospheric pressure. The measured response and recovery times of the graphene humidity sensors are on the order of several hundred milliseconds. Density functional theory simulations are employed to further investigate the sensitivity of the graphene devices towards water vapor. Results from the interaction between the electrostatic dipole moment of the water and the impurity bands in the SiO2 substrate, which in turn leads to electrostatic doping of the graphene layer. The proposed graphene sensor provides rapid response direct electrical read out and is compatible with back end of the line (BEOL) integration on top of CMOS-based integrated circuits.
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Submitted 25 October, 2015;
originally announced October 2015.
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On the accuracy of commonly used density functional approximations in determining the elastic constants of insulators and semiconductors
Authors:
M. Råsander,
M. A. Moram
Abstract:
We have performed density functional calculations using a range of local and semi-local as well as hybrid density functional approximations of the structure and elastic constants of 18 semiconductors and insulators. We find that most of the approximations have a very small error in the lattice constants, of the order of 1\%, while the error in the elastic constants and bulk modulus are much larger…
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We have performed density functional calculations using a range of local and semi-local as well as hybrid density functional approximations of the structure and elastic constants of 18 semiconductors and insulators. We find that most of the approximations have a very small error in the lattice constants, of the order of 1\%, while the error in the elastic constants and bulk modulus are much larger, at about 10\%. In addition, we find that the error in the elastic constants, $c_{ij}$, are larger compared to the error in the bulk modulus. Depending on the functional and which error estimate that is being used, the difference in the error between the elastic constants and the bulk modulus can be rather large, about a factor of two. According to our study, the overall best performing density functional approximation for determining the structure and elastic properties is the PBEsol, closely followed by the two hybrid functionals PBE0 and HSE, and the AM05 functional.
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Submitted 10 May, 2015;
originally announced May 2015.
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Electronic Structure and Lattice Dynamics in the FeSb$_{3}$ Skutterudite from Density Functional Theory
Authors:
Mikael Råsander,
Lars Bergqvist,
Anna Delin
Abstract:
We have performed density functional calculations of the electronic structure and lattice dynamics of the binary skutterudite FeSb$_{3}$. We find that the ground state of FeSb$_{3}$ is a near semi-metallic ferromagnet with $T_{c}=175$~K. Furthermore, we find that FeSb$_{3}$ is softer than CoSb$_{3}$ based on an analysis of the relation of the elastic constants and the shape of the phonon density o…
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We have performed density functional calculations of the electronic structure and lattice dynamics of the binary skutterudite FeSb$_{3}$. We find that the ground state of FeSb$_{3}$ is a near semi-metallic ferromagnet with $T_{c}=175$~K. Furthermore, we find that FeSb$_{3}$ is softer than CoSb$_{3}$ based on an analysis of the relation of the elastic constants and the shape of the phonon density of states in the two systems, which is in agreement with experimental observation. Based on these observations we find it plausible that FeSb$_{3}$ will have a lower thermal conductivity than CoSb$_{3}$. Additionally, our calculations indicate that FeSb$_{3}$ may be stable towards decomposition into FeSb$_{2}$ and Sb. Furthermore, for ferromagnetic FeSb$_{3}$ we obtain real-valued phonon frequencies and also a $c_{44}$ greater than zero, indicating that the system is mechanically as well as dynamically stable.
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Submitted 2 April, 2014;
originally announced April 2014.
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A first principles study of the stability and mobility of defects in titanium carbide
Authors:
Mikael Råsander,
Biplab Sanyal,
Ulf Jansson,
Olle Eriksson
Abstract:
We have performed density functional calculations of the formation energies of substitutional transition metal (TM) defects, C vacancies, and C interstitial defects in TiC. In addition we have evaluated the migration energy barriers for C atoms in the presence of TM impurities. We find that the solubility of TM impurities taken from the 3d TM series is low and only Sc and V impurities can be disso…
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We have performed density functional calculations of the formation energies of substitutional transition metal (TM) defects, C vacancies, and C interstitial defects in TiC. In addition we have evaluated the migration energy barriers for C atoms in the presence of TM impurities. We find that the solubility of TM impurities taken from the 3d TM series is low and only Sc and V impurities can be dissolved into TiC at equilibrium. In addition, we find that the migration energy barriers of C in TiC are greatly affected by the presence of TM impurities: The migration barriers are generally lower in the presence of impurities compared to pure TiC and show a clear dependence on the atomic size of the TM impurities. We propose that the mobility of C in TiC will be the highest in the presence of TM impurities from the middle of the 3d TM series.
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Submitted 12 March, 2013;
originally announced March 2013.
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Density functional theory study of the electronic structure of fluorite Cu$_{2}$Se
Authors:
Mikael Råsander,
Lars Bergqvist,
Anna Delin
Abstract:
We have investigated the electronic structure of fluorite Cu$_{2}$Se using density functional theory calculations within the LDA, PBE and AM05 approximations as well as with the non-local hybrid PBE0 and HSE approximations. Our results show that Cu$_{2}$Se is a zero gap semiconductor when using either a local or semi-local density functional approximation while there exists a gap when using the PB…
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We have investigated the electronic structure of fluorite Cu$_{2}$Se using density functional theory calculations within the LDA, PBE and AM05 approximations as well as with the non-local hybrid PBE0 and HSE approximations. Our results show that Cu$_{2}$Se is a zero gap semiconductor when using either a local or semi-local density functional approximation while there exists a gap when using the PBE0 functional. For the HSE approximation, we find that the presence of a gap depends on the range separation for the non-local exchange within the HSE approximation. For the occupied states we find that the LDA, PBE, AM05, PBE0 and HSE agrees when regarding the overall structure, however, the hybrid functionals are shifted towards lower energy values compared to the LDA, PBE and AM05. The valence bands obtained using the hybrid functionals are in good agreement with experimental valence band spectra. We also find that the PBE, PBE0 and HSE approximations give similar results regarding bulk properties, such as lattice constants and bulk modulus. In addition, we have investigated the localization of the Cu d-states and its effect on the band gap in the material using the LDA+U approach. We find that a gap is opened up by increasing the $U$, however, the $U$ values required for a gap opening is unrealistically high.
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Submitted 8 November, 2012; v1 submitted 2 November, 2012;
originally announced November 2012.
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Carbon release by selective alloying of transition metal carbides
Authors:
Mikael Råsander,
Erik Lewin,
Ola Wilhelmsson,
Biplab Sanyal,
Mattias Klintenberg,
Olle Eriksson,
Ulf Jansson
Abstract:
We have performed first principles density functional theory calculations on TiC alloyed on the Ti sublattice with 3d transition metals ranging from Sc to Zn. The theory is accompanied with experimental investigations, both as regards materials synthesis as well as characterization. Our results show that by dissolving a metal with a weak ability to form carbides, the stability of the alloy is lowe…
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We have performed first principles density functional theory calculations on TiC alloyed on the Ti sublattice with 3d transition metals ranging from Sc to Zn. The theory is accompanied with experimental investigations, both as regards materials synthesis as well as characterization. Our results show that by dissolving a metal with a weak ability to form carbides, the stability of the alloy is lowered and a driving force for the release of carbon from the carbide is created. During thin film growth of a metal carbide this effect will favor the formation of a nanocomposite with carbide grains in a carbon matrix. The choice of alloying elements as well as their concentrations will affect the relative amount of carbon in the carbide and in the carbon matrix. This can be used to design the structure of nanocomposites and their physical and chemical properties. One example of applications is as low-friction coatings. Of the materials studied, we suggest the late 3d transition metals as the most promising elements for this phenomenon, at least when alloying with TiC.
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Submitted 22 April, 2011;
originally announced April 2011.
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A novel wear-resistant magnetic thin film material based on a $Ti_{1-x}Fe_xC_{1-y}$ nanocomposite alloy
Authors:
Stojanka Bijelovic,
Mikael Råsander,
Ola Wilhelmsson,
Erik Lewin,
Biplab Sanyal,
Ulf Jansson,
Olle Eriksson,
Peter Svedlindh
Abstract:
In this study we report on the film growth and characterization of thin (approximately 50 nm thick) Ti-Fe-C films deposited on amorphous quartz. The experimental studies have been complemented by first principles density functional theory (DFT) calculations. Upon annealing of as-prepared films, the composition of the metastable Ti-Fe-C film changes. An iron-rich phase is first formed close to th…
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In this study we report on the film growth and characterization of thin (approximately 50 nm thick) Ti-Fe-C films deposited on amorphous quartz. The experimental studies have been complemented by first principles density functional theory (DFT) calculations. Upon annealing of as-prepared films, the composition of the metastable Ti-Fe-C film changes. An iron-rich phase is first formed close to the film surface, but with increasing annealing time this phase is gradually displaced toward the film-substrate interface where its position stabilizes. Both the magnetic ordering temperature and the saturation magnetization changes significantly upon annealing. The DFT calculations show that the critical temperature and the magnetic moment both increase with increasing Fe and C-vacancy concentration. The formation of the metastable iron-rich Ti-Fe-C compound is reflected in the strong increase of the magnetic ordering temperature. Eventually, after enough annealing time ($\geq 10$ minutes), nano-crystalline $α$-Fe starts to precipitate and the amount and size of these precipitates can be controlled by the annealing procedure; after 20 minutes of annealing, the experimental results indicate a nano-crystalline iron-film embedded in a wear resistant TiC compound. This conclusion is further supported by transmission electron microscopy studies on epitaxial Ti-Fe-C films deposited on single crystalline MgO substrates where, upon annealing, an iron film embedded in TiC is formed. Our results suggest that annealing of metastable Ti-Fe-C films can be used as an efficient way of creating a wear-resistant magnetic thin film material.
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Submitted 29 June, 2009;
originally announced June 2009.
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Pauli spin blockade in weakly coupled quantum dots
Authors:
J. Fransson,
M. Rasander
Abstract:
In a two-level system, constituted by two serially coupled single level quantum dots, coupled to external leads we find that the current is suppressed in one direction of biasing caused by a fully occupied two-electron triplet state in the interacting region. The efficiency of the current suppression is governed by the ratio between the interdot tunnelling rate and the level off-set. In the oppo…
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In a two-level system, constituted by two serially coupled single level quantum dots, coupled to external leads we find that the current is suppressed in one direction of biasing caused by a fully occupied two-electron triplet state in the interacting region. The efficiency of the current suppression is governed by the ratio between the interdot tunnelling rate and the level off-set. In the opposite bias direction, the occupation of the two-electron triplet is lifted which allows a larger current to flow through the system, where the conductance is provided by transitions between one-electron states and two-electron singlet states. Is is also shown that a finite ferromagnetic interdot exchange interaction provides an extended range of the current suppression, while an anti-ferromagnetic exchange leads to a decreased range of the blockade regime.
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Submitted 1 December, 2005; v1 submitted 19 September, 2005;
originally announced September 2005.
