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Optimizing 2D+1 Packing in Constrained Environments Using Deep Reinforcement Learning
Authors:
Victor Ulisses Pugliese,
Oséias F. de A. Ferreira,
Fabio A. Faria
Abstract:
This paper proposes a novel approach based on deep reinforcement learning (DRL) for the 2D+1 packing problem with spatial constraints. This problem is an extension of the traditional 2D packing problem, incorporating an additional constraint on the height dimension. Therefore, a simulator using the OpenAI Gym framework has been developed to efficiently simulate the packing of rectangular pieces on…
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This paper proposes a novel approach based on deep reinforcement learning (DRL) for the 2D+1 packing problem with spatial constraints. This problem is an extension of the traditional 2D packing problem, incorporating an additional constraint on the height dimension. Therefore, a simulator using the OpenAI Gym framework has been developed to efficiently simulate the packing of rectangular pieces onto two boards with height constraints. Furthermore, the simulator supports multidiscrete actions, enabling the selection of a position on either board and the type of piece to place. Finally, two DRL-based methods (Proximal Policy Optimization -- PPO and the Advantage Actor-Critic -- A2C) have been employed to learn a packing strategy and demonstrate its performance compared to a well-known heuristic baseline (MaxRect-BL). In the experiments carried out, the PPO-based approach proved to be a good solution for solving complex packaging problems and highlighted its potential to optimize resource utilization in various industrial applications, such as the manufacturing of aerospace composites.
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Submitted 21 March, 2025;
originally announced March 2025.
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Photoactivation of color centers induced by laser irradiation in ion-implanted diamond
Authors:
V. Pugliese,
E. Nieto Hernández,
E. Corte,
M. Govoni,
S. Ditalia Tchernij,
P. Olivero,
J. Forneris
Abstract:
Split-vacancy color centers in diamond are promising solid state platforms for the implementation of photonic quantum technologies. These luminescent defects are commonly fabricated upon low energy ion implantation and subsequent thermal annealing. Their technological uptake will require the availability of reliable methods for the controlled, large scale production of localized individual photon…
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Split-vacancy color centers in diamond are promising solid state platforms for the implementation of photonic quantum technologies. These luminescent defects are commonly fabricated upon low energy ion implantation and subsequent thermal annealing. Their technological uptake will require the availability of reliable methods for the controlled, large scale production of localized individual photon emitters. This task is partially achieved by controlled ion implantation to introduce selected impurities in the host material, and requires the development of challenging beam focusing or collimation procedures coupled with single-ion detection techniques. We report on protocol for the direct optical activation of split-vacancy color centers in diamond via localized processing with continuous wave laser at mW optical powers. We demonstrate the activation of photoluminescent Mg- and Sn-related centers at both the ensemble and single-photon emitter level in ion-implanted, high-purity diamond crystals without further thermal processing. The proposed lithographic method enables the activation of individual color centers at specific positions of a large area sample by means of a relatively inexpensive equipment offering the real-time, in situ monitoring of the process.
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Submitted 10 September, 2024;
originally announced September 2024.
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Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing
Authors:
E. Nieto Hernández,
H. B. Yağcı,
V. Pugliese,
P. Aprà,
J. K. Cannon,
S. G. Bishop,
J. Hadden,
S. Ditalia Tchernij,
Olivero,
A. J. Bennett,
J. Forneris
Abstract:
Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III- nitrides have previously been shown to host efficient SPEs which are attributed to deep energy levels within the large bandgap of the material, in a way that is similar to extensively investigated colour centres in diamo…
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Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III- nitrides have previously been shown to host efficient SPEs which are attributed to deep energy levels within the large bandgap of the material, in a way that is similar to extensively investigated colour centres in diamond. Anti-bunched emission from defect centres within gallium nitride (GaN) and aluminium nitride (AlN) have been recently demonstrated. While such emitters are particularly interesting due to the compatibility of III-nitrides with cleanroom processes, the nature of such defects and the optimal conditions for forming them are not fully understood. Here, we investigate Al implantation on a commercial AlN epilayer through subsequent steps of thermal annealing and confocal microscopy measurements. We observe a fluence-dependent increase in the density of the emitters, resulting in creation of ensembles at the maximum implantation fluence. Annealing at 600 °C results in the optimal yield in SPEs formation at the maximum fluence, while a significant reduction in SPE density is observed at lower fluences. These findings suggest that the mechanism of vacancy formation plays a key role in the creation of the emitters, and open new perspectives in the defect engineering of SPEs in solid state.
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Submitted 31 October, 2023;
originally announced October 2023.
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Efficient fabrication of high-density ensembles of color centers via ion implantation on a hot diamond substrate
Authors:
E. Nieto Hernandez,
G. Andrini,
A. Crnjac,
M. Brajkovic,
F. Picariello,
E. Corte,
V. Pugliese,
M. Matijević,
P. Aprà,
V. Varzi,
J. Forneris,
M. Genovese,
Z. Siketic,
M. Jaksic,
S. Ditalia Tchernij
Abstract:
Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of large ensembles of NV centers, whose fabrication by ion implantation is upper limited by the amount of radiation damage introduced in the diamond lattice. In th…
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Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of large ensembles of NV centers, whose fabrication by ion implantation is upper limited by the amount of radiation damage introduced in the diamond lattice. In this works we demonstrate an approach to increase the density of NV centers upon the high-fluence implantation of MeV N2+ ions on a hot target substrate (>550 °C). Our results show that, with respect to room-temperature implantation, the high-temperature process increases the vacancy density threshold required for the irreversible conversion of diamond to a graphitic phase, thus enabling to achieve higher density ensembles. Furthermore, the formation efficiency of color centers was investigated on diamond substrates implanted at varying temperatures with MeV N2+ and Mg+ ions revealing that the formation efficiency of both NV centers and magnesium-vacancy (MgV) centers increases with the implantation temperature.
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Submitted 26 May, 2025; v1 submitted 30 October, 2023;
originally announced October 2023.
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Magnesium-vacancy optical centers in diamond
Authors:
Emilio Corte,
Greta Andrini,
Elena Nieto Hernández,
Vanna Pugliese,
Ângelo Costa,
Goele Magchiels,
Janni Moens,
Shandirai Malven Tunhuma,
Renan Villarreal,
Lino M. C. Pereira,
André Vantomme,
João Guilherme Correia,
Ettore Bernardi,
Paolo Traina,
Ivo Pietro Degiovanni,
Ekaterina Moreva,
Marco Genovese,
Sviatoslav Ditalia Tchernij,
Paolo Olivero,
Ulrich Wahl,
Jacopo Forneris
Abstract:
We provide the first systematic characterization of the structural and photoluminescence properties of optically active defect centers fabricated upon implantation of 30-100 keV Mg+ ions in artificial diamond. The structural configurations of Mg-related defects were studied by the emission channeling technique for 27Mg implantations performed both at room-temperature and 800 °C, which allowed the…
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We provide the first systematic characterization of the structural and photoluminescence properties of optically active defect centers fabricated upon implantation of 30-100 keV Mg+ ions in artificial diamond. The structural configurations of Mg-related defects were studied by the emission channeling technique for 27Mg implantations performed both at room-temperature and 800 °C, which allowed the identification of a major fraction of Mg atoms (~30-42%) in sites which are compatible with the split-vacancy structure of the MgV complex. A smaller fraction of Mg atoms (~13-17%) was found on substitutional sites. The photoluminescence emission was investigated both at the ensemble and individual defect level in a temperature range comprised between 5 K and 300 K, offering a detailed picture of the MgV-related emission properties and revealing the occurrence of previously unreported spectral features. The optical excitability of the MgV center was also studied as a function of the optical excitation wavelength enabling to identify the optimal conditions for photostable and intense emission. The results are discussed in the context of the preliminary experimental data and the theoretical models available in the literature, with appealing perspectives for the utilization of the tunable properties of the MgV center for quantum information processing applications.
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Submitted 17 June, 2022;
originally announced June 2022.
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Solving the conundrum of intervening strong MgII absorbers towards GRBs and quasars
Authors:
L. Christensen,
S. D. Vergani,
S. Schulze,
N. Annau,
J. Selsing,
J. P. U. Fynbo,
A. de Ugarte Postigo,
R. Cañameras,
S. Lopez,
D. Passi,
P. Cortés-Zuleta,
S. L. Ellison,
V. D'Odorico,
G. Becker,
T. A. M. Berg,
Z. Cano,
S. Covino,
G. Cupani,
V. D'Elia,
P. Goldoni,
A. Gomboc,
F. Hammer,
K. E. Heintz,
P. Jakobsson,
J. Japelj
, et al. (11 additional authors not shown)
Abstract:
Previous studies have shown that the incidence rate of intervening strong MgII absorbers towards GRBs were a factor of 2 - 4 higher than towards quasars. Exploring the similar sized and uniformly selected legacy data sets XQ-100 and XSGRB, each consisting of 100 quasar and 81 GRB afterglow spectra obtained with a single instrument (VLT/X-shooter), we demonstrate that there is no disagreement in th…
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Previous studies have shown that the incidence rate of intervening strong MgII absorbers towards GRBs were a factor of 2 - 4 higher than towards quasars. Exploring the similar sized and uniformly selected legacy data sets XQ-100 and XSGRB, each consisting of 100 quasar and 81 GRB afterglow spectra obtained with a single instrument (VLT/X-shooter), we demonstrate that there is no disagreement in the number density of strong MgII absorbers with rest-frame equivalent widths $W_r^{2796} >$ 1 Å towards GRBs and quasars in the redshift range 0.1 < z < 5. With large and similar sample sizes, and path length coverages of $Δ$z = 57.8 and 254.4 for GRBs and quasars, respectively, the incidences of intervening absorbers are consistent within 1 sigma uncertainty levels at all redshifts. For absorbers at z < 2.3 the incidence towards GRBs is a factor of 1.5$\pm$0.4 higher than the expected number of strong MgII absorbers in SDSS quasar spectra, while for quasar absorbers observed with X-shooter we find an excess factor of 1.4$\pm$0.2 relative to SDSS quasars. Conversely, the incidence rates agree at all redshifts with reported high spectral resolution quasar data, and no excess is found. The only remaining discrepancy in incidences is between SDSS MgII catalogues and high spectral resolution studies. The rest-frame equivalent width distribution also agrees to within 1 sigma uncertainty levels between the GRB and quasar samples. Intervening strong MgII absorbers towards GRBs are therefore neither unusually frequent, nor unusually strong.
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Submitted 4 September, 2017;
originally announced September 2017.
