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On the origin of the E1 electron trap level in GaN and dilute AlxGa1-xN films
Authors:
Piotr Kruszewski,
Jose Coutinho,
Vladimir P. Markevich,
Pawel Prystawko,
Lijie Sun,
Jerzy Plesiewicz,
Chris A. Dawe,
Matthew P. Halsall,
Anthony R. Peaker
Abstract:
The results of high-resolution Laplace deep-level transient spectroscopy (L-DLTS) measurements applied to the E1 and FeGa electron traps in dilute AlxGa1-xN films (x = 0.063), grown by metal-organic vapor phase epitaxy (MOVPE) on Ammono-GaN substrates, are presented. It is shown that the electron emission signals associated with the E1 donor and the FeGa acceptor levels split into individual compo…
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The results of high-resolution Laplace deep-level transient spectroscopy (L-DLTS) measurements applied to the E1 and FeGa electron traps in dilute AlxGa1-xN films (x = 0.063), grown by metal-organic vapor phase epitaxy (MOVPE) on Ammono-GaN substrates, are presented. It is shown that the electron emission signals associated with the E1 donor and the FeGa acceptor levels split into individual components due to the aluminium fluctuations in the nearest neighbour shells around the E1 and FeGa defects. The splitting patterns observed in the L-DLTS spectra are nearly identical for both signals. Furthermore, the ratios of peak magnitudes determined from the L-DLTS analysis for both the E1 and E3 traps are consistent with calculated probabilities of finding a given number of aluminium atoms in the second nearest neighbour shell around a Ga lattice site in AlxGa1-xN with x = 0.063. These findings provide strong evidence that both the E1 and the FeGa trap states in dilute AlxGa1-xN are related to defects located in the Ga sublattice. To elucidate the origin of the E1 trap in AlxGa1-xN, we have performed a comprehensive scan of possible impurities and defects in GaN and AlxGa1-xN using hybrid density functional calculations of transition levels and their associated shifts upon substitution of Ga neighbour atoms by Al. From analysis of the results, we find that the E1 electron trap in GaN and AlxGa1-xN is most likely related to a donor transition from a carbon or molybdenum impurity atom at the gallium site, respectively.
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Submitted 12 June, 2025;
originally announced June 2025.
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Effect of current on terahertz plasmons in AlGaN/GaN heterostructures
Authors:
M. Dub,
P. Sai,
Y. Ivonyak,
P. Prystawko,
W. Knap,
S. Rumyantsev
Abstract:
Terahertz transmittance spectra of plasmonic crystals based on two-dimensional electron gas in AlGaN/GaN heterostructures were studied in grating-gate and gateless plasmonic crystals as a function of lateral bias. The decrease of the plasmon resonance frequencies (redshift) with increase of the lateral current was observed for both types of structures. We show that the change of the electron conce…
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Terahertz transmittance spectra of plasmonic crystals based on two-dimensional electron gas in AlGaN/GaN heterostructures were studied in grating-gate and gateless plasmonic crystals as a function of lateral bias. The decrease of the plasmon resonance frequencies (redshift) with increase of the lateral current was observed for both types of structures. We show that the change of the electron concentration profile and Joule heating are the main phenomena responsible for the shift of plasma resonant frequency. These results are important for designing plasmonic resonances based filters, detectors, and emitters operating under voltage bias conditions.
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Submitted 12 June, 2025;
originally announced June 2025.
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Effect of temperature on 2D terahertz plasmons and electron effective mass in AlGaN/GaN
Authors:
M. Dub,
P. Sai,
D. Yavorskiy,
Y. Ivonyak,
P. Prystawko,
R. Kucharski,
G. Cywinski,
W. Knap,
S. Rumyantsev
Abstract:
The effect of temperature on two-dimensional plasmons in large-area AlGaN/GaN plasmonic crystals was studied experimentally. With the temperature increase the resonant plasmon frequency redshifts due to the strong temperature dependence of the electron effective mass and electron concentration under open to the environment surface of AlGaN. The temperature dependence of electron effective mass is…
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The effect of temperature on two-dimensional plasmons in large-area AlGaN/GaN plasmonic crystals was studied experimentally. With the temperature increase the resonant plasmon frequency redshifts due to the strong temperature dependence of the electron effective mass and electron concentration under open to the environment surface of AlGaN. The temperature dependence of electron effective mass is confirmed by the cyclotron resonance measurements.
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Submitted 12 May, 2025;
originally announced May 2025.
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Off-resonant photoluminescence spectroscopy of high-optical quality single photon emitters in GaN
Authors:
Nilesh Dalla,
Paweł Kulboka,
Michał Kobecki,
Jan Misiak,
Paweł Prystawko,
Henryk Turski,
Piotr Kossacki,
Tomasz Jakubczyk
Abstract:
In this work, we analyze the relevance of excitation parameters on the emission from single-photon emitting defect centers in GaN. We investigate the absorption spectrum of different emitters by photoluminescence excitation technique at 10\,K. We report large spectral jumps (shifts up to 22\,meV) in the emitters' zero-phonon line (ZPL). The likelihood of such jumps is increased by the change in ex…
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In this work, we analyze the relevance of excitation parameters on the emission from single-photon emitting defect centers in GaN. We investigate the absorption spectrum of different emitters by photoluminescence excitation technique at 10\,K. We report large spectral jumps (shifts up to 22\,meV) in the emitters' zero-phonon line (ZPL). The likelihood of such jumps is increased by the change in excitation energy. The shifts indicate a large built-in dipole moment of the defects and suggest a possibility to electrically tune their ZPL in a wide range. From the photoluminescence excitation studies, we observe that for majority of the emitters the absorption peaks exist between 2 and 2.55\,eV. The absorption peaks vary from emitter to emitter, and no universal absorption pattern is apparent. Finally, for selected emitters we observe significantly reduced spectral diffusion and instrument-limited linewidth of $138\,μeV$ (0.04\,nm).These findings show a new perspective for atomic defect GaN emitters as sources of coherent photons, shine new light on their energy level structure and show the possibility of tuning the ZPL, paving the way to fully harness their potential for applications in quantum technologies.
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Submitted 28 January, 2025; v1 submitted 9 January, 2025;
originally announced January 2025.
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Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: manifestation of spin-orbit band splitting
Authors:
P. Sai,
S. O. Potashin,
M. Szola,
D. Yavorskiy,
G. Cywinski,
P. Prystawko,
J. Lusakowski,
S. D. Ganichev,
S. Rumyantsev,
W. Knap,
V. Yu. Kachorovskii
Abstract:
We report on the study of the magnetic ratchet effect in AlGaN/GaN heterostructures superimposed with lateral superlattice formed by dual-grating gate structure. We demonstrate that irradiation of the superlattice with terahertz beam results in the dc ratchet current, which shows giant magneto-oscillations in the regime of Shubnikov de Haas oscillations. The oscillations have the same period and a…
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We report on the study of the magnetic ratchet effect in AlGaN/GaN heterostructures superimposed with lateral superlattice formed by dual-grating gate structure. We demonstrate that irradiation of the superlattice with terahertz beam results in the dc ratchet current, which shows giant magneto-oscillations in the regime of Shubnikov de Haas oscillations. The oscillations have the same period and are in phase with the resistivity oscillations. Remarkably, their amplitude is greatly enhanced as compared to the ratchet current at zero magnetic field, and the envelope of these oscillations exhibits large beatings as a function of the magnetic field. We demonstrate that the beatings are caused by the spin-orbit splitting of the conduction band. We develop a theory which gives a good qualitative explanation of all experimental observations and allows us to extract the spin-orbit splitting constant α_{\rm SO}= 7.5 \pm 1.5 meV \unicode{x212B}. We also discuss how our results are modified by plasmonic effects and show that these effects become more pronounced with decreasing the period of the gating gate structures down to sub-microns.
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Submitted 25 February, 2021;
originally announced February 2021.
