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Electrical Characteristics of Superconducting-Ferromagnetic Transistors
Authors:
Ivan P. Nevirkovets,
Oleksandr Chernyashevskyy,
Georgy V. Prokopenko,
Oleg A. Mukhanov,
John B. Ketterson
Abstract:
We report experimental results on characteristics of SFIFS junctions and multi-terminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively). The SFIFS junctions serve as injectors in the SFIFSIS devices which have transistor-like properties; for this reason we call them Superconducting-Ferromagnetic Transistors (SFT…
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We report experimental results on characteristics of SFIFS junctions and multi-terminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively). The SFIFS junctions serve as injectors in the SFIFSIS devices which have transistor-like properties; for this reason we call them Superconducting-Ferromagnetic Transistors (SFTs). We have found the F (Ni) thickness at which the SFIFS current-voltage characteristic (CVC) becomes linear. Furthermore, we investigated the DC and AC characteristics of SFTs of two types: ordinary devices with a single acceptor (SIS) junction, and devices with a double acceptor. In the first case, we focused on studying the influence of the injection current through the SFIFS junction on the maximum Josephson current of the SIS acceptor. For devices of the second type, we studied voltage amplification properties when the operating point was chosen in the sub-gap region of the acceptor CVC. By applying an AC signal (in the kHz range) while biasing the injector (SFIFS) junction with a constant DC current, we observed a voltage gain above 25 on the double acceptor. In the reverse transmission experiment, we applied DC current and an AC modulation to the acceptor junction and, within the accuracy of the experiment, observed no response on the injector junction, which implies an excellent input-output isolation in our SFIFSIS devices. The experiments indicate that, after optimization of the device parameters, they can be used as input/output isolators and amplifiers for memory, digital, and RF applications.
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Submitted 8 October, 2014;
originally announced October 2014.
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Development of 2D Bi-SQUID Arrays with High Linearity
Authors:
S. Berggren,
G. Prokopenko,
P. Longhini,
A. Palacios,
O. A. Mukhanov,
A. Leese de Escobar,
B. J. Taylor,
M. C. de Andrade,
M. Nisenoff,
R. L. Fagaly,
T. Wong,
E. Cho,
E. Wong,
V. In
Abstract:
We develop a two-dimensional (2D) Superconducting Quantum Interference Filter (SQIF) array based on recently introduced high-linearity tri-junction bi-SQUIDs. Our bi-SQUID SQIF array design is based on a tight integration of individual bi- SQUID cells sharing inductances with adjacent cells. We provide extensive computer simulations, analysis and experimental measurements, in which we explore the…
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We develop a two-dimensional (2D) Superconducting Quantum Interference Filter (SQIF) array based on recently introduced high-linearity tri-junction bi-SQUIDs. Our bi-SQUID SQIF array design is based on a tight integration of individual bi- SQUID cells sharing inductances with adjacent cells. We provide extensive computer simulations, analysis and experimental measurements, in which we explore the phase dynamics and linearity of the array voltage response. The non-uniformity in inductances of the bi-SQUIDs produces a pronounced zero-field single antipeak in the voltage response. The anti-peak linearity and size can be optimized by varying the critical current of the additional junction of each bi-SQUID. The layout implementation of the tight 2D array integration leads to a distinct geometrical diamond shape formed by the merged dual bi-SQUID cells. Different size 2D arrays are fabricated using standard HYPRES niobium 4.5 kA/cm2 fabrication process. The measured linearity, power gain, and noise properties will be analyzed for different array sizes and the results will be compared with circuit simulations. We will discuss a design approach for the electrically small magnetic field antenna and low-noise amplifiers with high bandwidth based on these 2D bi-SQUID SQIF arrays. The results from this work will be used to design chips densely and completely covered in bi-SQUIDs that has optimized parameters such as linearity and power gain.
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Submitted 8 January, 2013;
originally announced January 2013.
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DC and RF Measurements of Serial Bi-SQUID Arrays
Authors:
G. V. Prokopenko,
O. A. Mukhanov,
A. Leese de Escobar,
B. Taylor,
M. C. de Andrade,
S. Berggren,
P. Longhini,
A. Palacios,
M. Nisenoff,
R. L. Fagaly
Abstract:
SQUID arrays are promising candidates for low profile antennas and low noise amplifier applications. We present the integrated circuit designs and results of DC and RF measurements of the wideband serial arrays based on integration of linear bi-SQUID cells forming a Superconducting Quantum Interference Filter (bi-SQUID SQIF). Various configurations of serial arrays designs are described. The measu…
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SQUID arrays are promising candidates for low profile antennas and low noise amplifier applications. We present the integrated circuit designs and results of DC and RF measurements of the wideband serial arrays based on integration of linear bi-SQUID cells forming a Superconducting Quantum Interference Filter (bi-SQUID SQIF). Various configurations of serial arrays designs are described. The measured linearity, power gain, and noise temperature are analyzed and compared. The experimental results are matched to results of mathematical modeling. A serial bi-SQUID SQIF arrays are mounted into a coplanar waveguide (CPW) and symmetrically grounded to corresponding sides of CPW. The RF output comes out from the central common line, which is also used for DC biasing and forms a symmetrical balanced output. The signal and DC flux biasing line is designed as coplanar lines passed in parallel over each bi-SQUID cell in a bidirectional fashion concentrating magnetic flux inside of each cell. Serial bi-SQUID SQIF arrays are fabricated on 5 mm x 5 mm chips using standard HYPRES niobium 4.5 kA/cm2 fabrication process.
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Submitted 15 December, 2012;
originally announced December 2012.
