Spatially controlled fabrication of single NV centers in IIa HPHT diamond
Authors:
S. D. Trofimov,
S. A. Tarelkin,
S. V. Bolshedvorskii,
V. S. Bormashov,
S. Yu. Troshchiev,
A. V. Golovanov,
N. V. Luparev,
D. D. Prikhodko,
K. N. Boldyrev,
S. A. Terentiev,
A. V. Akimov,
N. I. Kargin,
N. S. Kukin,
A. S. Gusev,
A. A. Shemukhin,
Yu. V. Balakshin,
S. G. Buga,
V. D. Blank
Abstract:
Single NV centers in HPHT IIa diamond are fabricated by helium implantation through lithographic masks. The concentrations of created NV centers in different growth sectors of HPHT are compared quantitatively. It is shown that the purest {001} growth sector (GS) of HPHT diamond allows to create groups of single NV centers in predetermined locations. The {001} GS HPHT diamond is thus considered a g…
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Single NV centers in HPHT IIa diamond are fabricated by helium implantation through lithographic masks. The concentrations of created NV centers in different growth sectors of HPHT are compared quantitatively. It is shown that the purest {001} growth sector (GS) of HPHT diamond allows to create groups of single NV centers in predetermined locations. The {001} GS HPHT diamond is thus considered a good material for applications that involve single NV centers.
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Submitted 4 December, 2019; v1 submitted 27 November, 2019;
originally announced November 2019.
Resolving isotope splitting of boron-related intracenter transitions in diamond by infrared absorption spectroscopy
Authors:
Dmitrii Prikhodko,
Sergey Pavlov,
Sergey Tarelkin,
Vitaly Bormashov,
Mikhail Kuznetsov,
Sergey Terentiev,
Sergey Nosukhin,
Sergey Troschiev,
Heinz-Wilhelm Hübers,
Vladimir Blank
Abstract:
Isotopic enrichment offers cutting-edge properties of materials opening exciting research and development opportunities. In semiconductors, reached progress of ultimate control in growth and doping techniques follows nowadays the high level isotopic purification. This requires deep understanding of isotopic disorder effects and techniques of their effective determination. Isotopic content of both…
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Isotopic enrichment offers cutting-edge properties of materials opening exciting research and development opportunities. In semiconductors, reached progress of ultimate control in growth and doping techniques follows nowadays the high level isotopic purification. This requires deep understanding of isotopic disorder effects and techniques of their effective determination. Isotopic content of both crystal lattice and impurity centers cause the effects, which can be examined by different optical techniques. While disorder in the host lattice can be straight forward evaluated by inelastic light scattering or by SIMS measurements, determination of isotopic contributions of many orders less presented impurities remains challenging and usually observed in high-resolution photoluminescence or optical absorption spectra. Boron-doped diamonds exhibit complex infrared absorption spectra while boron-related luminescence remains unobserved. Boron, as a most light element acting as a hydrogen-like dopant in elemental semiconductors, has a largest relative difference in its isotope masses, and by this, cause the largest isotopic disorder in semiconductors, including diamond, an elemental semiconductor with the lightest atomic mass of a host lattice. This enables an access to the isotopic constitution of boron in diamond by infrared absorption spectroscopy. By comparison of low-temperature absorption spectra of a natural (20% of 10B and 80% of 11B isotopes) and 11B enriched (up to 99%) doped diamonds we differentiate the intracenter transitions related to 10B and to 11B isotopes. We have found that the isotopic spectral lines of the same boron intracenter transition are separated with the energy of about 0.7 meV. This is the largest impurity isotopic shift ever observed in semiconductors doped by hydrogen-like impurity centers.
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Submitted 26 November, 2019;
originally announced November 2019.
