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Kilobyte-Scale, Selector-Free, Temperature-Hard AlScN Ferroelectric Diode Crossbar Arrays
Authors:
Zirun Han,
Chao-Chuan Chen,
Dhiren K. Pradhan,
David C. Moore,
Ravali Gudavalli,
Xindi Yang,
Kwan-Ho Kim,
Hyunmin Cho,
Zachary Anderson,
Spencer Ware,
Harsh Yellai,
W. Joshua Kennedy,
Nicholas R. Glavin,
Roy H. Olsson III,
Deep Jariwala
Abstract:
We report the fabrication and characterization of kilobyte-scale, selector-free, ferroelectric (FE) diode crossbar memory arrays based on aluminum scandium nitride (AlScN). Utilizing a fully CMOS back-end-of-line (BEOL) compatible process, we fabricated 2-kilobyte (128 $\times$ 128) arrays with device diameters down to 5 $μ$m, achieving memory densities up to 2500 bits/mm$^2$. Large-scale electric…
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We report the fabrication and characterization of kilobyte-scale, selector-free, ferroelectric (FE) diode crossbar memory arrays based on aluminum scandium nitride (AlScN). Utilizing a fully CMOS back-end-of-line (BEOL) compatible process, we fabricated 2-kilobyte (128 $\times$ 128) arrays with device diameters down to 5 $μ$m, achieving memory densities up to 2500 bits/mm$^2$. Large-scale electrical characterization across 1000 randomly selected devices reveals a yield rate of 95.2%, a tight switching voltage distribution with a coefficient of variation (CV) of 0.003, and consistent on/off ratios of around 10 with a CV of 0.27. We demonstrate selector-free read and program operations of the array, enabled by the high nonlinearity, rectification, and uniform switching behavior of the FE diodes. Furthermore, we verified consistent ferroelectric switching during array operation at temperatures up to 600 $^\circ$C. Our results highlight the potential of AlScN FE diode arrays for energy-efficient, high-density memory applications and lay the groundwork for future integration in compute-near-memory, high-temperature memory, and analog compute-in-memory systems.
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Submitted 5 June, 2025;
originally announced June 2025.
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Leakage Suppression Across Temperature in Al1-xScxN Thin Film Ferroelectric Capacitors through Boron Incorporation
Authors:
Pedram Yousefian,
Xiaolei Tong,
Jonathan Tan,
Dhiren K. Pradhan,
Deep Jariwala,
Roy H. Olsson III
Abstract:
This paper presents high-temperature ferroelectric characterization of 40~nm Al$_{1-x-y}$B$_x$Sc$_y$N (AlBScN) thin film capacitors grown by co-sputtering Al$_{0.89}$B$_{0.11}$ and Sc targets onto Pt(111)/Ti(002)/Si(100) substrates. Structural analysis confirmed a c-axis-oriented wurtzite structure with a low surface roughness of 1.37~nm. Ferroelectric switching, characterized by positive-up-negat…
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This paper presents high-temperature ferroelectric characterization of 40~nm Al$_{1-x-y}$B$_x$Sc$_y$N (AlBScN) thin film capacitors grown by co-sputtering Al$_{0.89}$B$_{0.11}$ and Sc targets onto Pt(111)/Ti(002)/Si(100) substrates. Structural analysis confirmed a c-axis-oriented wurtzite structure with a low surface roughness of 1.37~nm. Ferroelectric switching, characterized by positive-up-negative-down (PUND) measurements up to 600~$^\circ$C, exhibited a linear decrease in coercive fields from 6.2~MV/cm at room temperature to 4.2~MV/cm at 600~$^\circ$C, while remanent polarization remained stable with temperature. Direct current I-V measurements highlight a significant suppression of leakage currents, over two orders of magnitude lower compared to AlScN capacitors fabricated under similar conditions. These results position AlBScN thin films as strong candidates for ferroelectric applications in extreme environments.
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Submitted 2 May, 2025;
originally announced May 2025.
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Observation of giant remnant polarization in ultrathin AlScN at cryogenic temperatures
Authors:
Seunguk Song,
Dhiren K. Pradhan,
Zekun Hu,
Yinuo Zhang,
Rachael N. Keneipp,
Michael A. Susner,
Pijush Bhattacharya,
Marija Drndić,
Roy H. Olsson III,
Deep Jariwala
Abstract:
The discovery of wurtzite ferroelectrics opens new frontiers in polar materials, yet their behavior at cryogenic temperatures remains unexplored. Here, we reveal unprecedented ferroelectric properties in ultrathin (10 nm) Al$_{0.68}$Sc$_{0.32}$N (AlScN) at cryogenic temperatures where the properties are fundamentally distinct from those of conventional oxide ferroelectrics. At 12 K, we demonstrate…
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The discovery of wurtzite ferroelectrics opens new frontiers in polar materials, yet their behavior at cryogenic temperatures remains unexplored. Here, we reveal unprecedented ferroelectric properties in ultrathin (10 nm) Al$_{0.68}$Sc$_{0.32}$N (AlScN) at cryogenic temperatures where the properties are fundamentally distinct from those of conventional oxide ferroelectrics. At 12 K, we demonstrate a giant remnant polarization exceeding 250 $μ$C/cm$^2$ -- more than twice that of any known ferroelectric -- driven by an enhanced c/a ratio in the wurtzite structure. Our devices sustain remarkably high electric fields (~13 MV/cm) while maintaining reliable switching, achieving over 104 polarization reversal cycles at 12 K. Critically, this breakdown field strength approaches that of passive dielectric materials while maintaining ferroelectric functionality. The extraordinary polarization enhancement and high-field stability at cryogenic temperatures contrasts sharply with oxide ferroelectrics, establishing wurtzite ferroelectrics as a distinct class of polar materials with implications spanning fundamental physics to cryogenic non-volatile memory and quantum technologies.
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Submitted 25 March, 2025;
originally announced March 2025.
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Inner and characteristic functions in polydiscs
Authors:
Ramlal Debnath,
Deepak K. Pradhan,
Jaydeb Sarkar
Abstract:
Characteristic functions of linear operators are analytic functions that serve as complete unitary invariants. Such functions, as long as they are built in a natural and canonical manner, provide representations of inner functions on a suitable domain and make significant contributions to the development of various theories in Hilbert function spaces. In this paper, we solve this problem in polydi…
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Characteristic functions of linear operators are analytic functions that serve as complete unitary invariants. Such functions, as long as they are built in a natural and canonical manner, provide representations of inner functions on a suitable domain and make significant contributions to the development of various theories in Hilbert function spaces. In this paper, we solve this problem in polydiscs. In particular, we present a concrete description of the characteristic functions of tuples of commuting pure contractions and, consequently, provide a description of inner functions on polydiscs.
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Submitted 2 February, 2025;
originally announced February 2025.
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Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C
Authors:
Yunfei He,
David C. Moore,
Yubo Wang,
Spencer Ware,
Sizhe Ma,
Dhiren K. Pradhan,
Zekun Hu,
Xingyu Du,
W. Joshua Kennedy,
Nicholas R. Glavin,
Roy H. Olsson III,
Deep Jariwala
Abstract:
Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC metal-ferroelectric-semiconductor capacitors for high-temperature non-volatile memory applications. Our 30-nm thick ferroelectric Al0.68Sc0.32N film grown on SiC exhibits stable and…
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Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC metal-ferroelectric-semiconductor capacitors for high-temperature non-volatile memory applications. Our 30-nm thick ferroelectric Al0.68Sc0.32N film grown on SiC exhibits stable and robust ferroelectric switching up to 1000°C. The coercive field decreases linearly from -6.4/+11.9 MV cm-1 at room temperature to -3.1/+7.8 MV cm-1 at 800°C, further reducing to -2.5 MV cm-1 at 1000°C. At 600°C, the devices achieve remarkable reliability with ~2000 endurance cycles and over at least 100 hours of retention with negligible polarization loss. At 800°C, the devices retain data for at least 10,000 seconds and exceed 400 write cycles. Our results further highlight the potential for ferroelectric AlScN thin-films particularly when paired with SiC semiconductor substrates for high-temperature non-volatile memory.
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Submitted 19 March, 2025; v1 submitted 25 November, 2024;
originally announced November 2024.
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Materials for High Temperature Digital Electronics
Authors:
Dhiren K. Pradhan,
David C. Moore,
A. Matt Francis,
Jacob Kupernik,
W. Joshua Kennedy,
Nicholas R. Glavin,
Roy H. Olsson III,
Deep Jariwala
Abstract:
Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and mainstream use, current silicon-based devices suffer significant reliability issues at temperatures exceeding 125 C. The emergent technological frontiers of sp…
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Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and mainstream use, current silicon-based devices suffer significant reliability issues at temperatures exceeding 125 C. The emergent technological frontiers of space exploration, geothermal energy harvesting, nuclear energy, unmanned avionic systems, and autonomous driving will rely on control systems, sensors, and communication devices which operate at temperatures as high as 500 C and beyond. At these extreme temperatures, active (heat exchanger, phase change cooling) or passive (fins and thermal interface materials) cooling strategies add significant mass and complication which is often infeasible. Thus, new material solutions beyond conventional silicon CMOS devices are necessary for high temperature, resilient electronic systems. Accomplishing this will require a united effort to explore development, integration, and ultimately manufacturing of non-silicon-based logic and memory technologies, non-traditional metals for interconnects, and ceramic packaging technology.
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Submitted 21 August, 2024; v1 submitted 4 April, 2024;
originally announced April 2024.
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Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes
Authors:
Kwan-Ho Kim,
Zirun Han,
Yinuo Zhang,
Pariasadat Musavigharavi,
Jeffrey Zheng,
Dhiren K. Pradhan,
Eric A. Stach,
Roy H. Olsson III,
Deep Jariwala
Abstract:
The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a 3D stack, is gaining attention, with CMOS back-end-of-line (BEOL) compatible ferroelectric (FE) diodes being ideal due to their two-terminal design and inherent…
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The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a 3D stack, is gaining attention, with CMOS back-end-of-line (BEOL) compatible ferroelectric (FE) diodes being ideal due to their two-terminal design and inherently selector-free nature, facilitating high-density crossbar arrays. Here, we demonstrate BEOL-compatible, high-performance FE-diodes scaled to 5, 10, and 20 nm FE Al0.72Sc0.28N/Al0.64Sc0.36N films. Through interlayer (IL) engineering, we show substantial improvements in the ON/OFF ratios (>166 times) and rectification ratios (>176 times) in these scaled devices. The superlative characteristics also enables 5-bit multi-state operation with a stable retention. We also experimentally and theoretically demonstrate the counterintuitive result that the inclusion of an IL can lead to a decrease in the ferroelectric switching voltage of the device. An in-depth analysis into the device transport mechanisms is performed, and our compact model aligns seamlessly with the experimental results. Our results suggest the possibility of using scaled AlxSc1-xN FE-diodes for high performance, low-power, embedded NVM.
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Submitted 18 March, 2024;
originally announced March 2024.
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A multiple k-means cluster ensemble framework for clustering citation trajectories
Authors:
Joyita Chakraborty,
Dinesh K. Pradhan,
Subrata Nandi
Abstract:
Citation maturity time varies for different articles. However, the impact of all articles is measured in a fixed window. Clustering their citation trajectories helps understand the knowledge diffusion process and reveals that not all articles gain immediate success after publication. Moreover, clustering trajectories is necessary for paper impact recommendation algorithms. It is a challenging prob…
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Citation maturity time varies for different articles. However, the impact of all articles is measured in a fixed window. Clustering their citation trajectories helps understand the knowledge diffusion process and reveals that not all articles gain immediate success after publication. Moreover, clustering trajectories is necessary for paper impact recommendation algorithms. It is a challenging problem because citation time series exhibit significant variability due to non linear and non stationary characteristics. Prior works propose a set of arbitrary thresholds and a fixed rule based approach. All methods are primarily parameter dependent. Consequently, it leads to inconsistencies while defining similar trajectories and ambiguities regarding their specific number. Most studies only capture extreme trajectories. Thus, a generalised clustering framework is required. This paper proposes a feature based multiple k means cluster ensemble framework. 1,95,783 and 41,732 well cited articles from the Microsoft Academic Graph data are considered for clustering short term (10 year) and long term (30 year) trajectories, respectively. It has linear run time. Four distinct trajectories are obtained Early Rise Rapid Decline (2.2%), Early Rise Slow Decline (45%), Delayed Rise No Decline (53%), and Delayed Rise Slow Decline (0.8%). Individual trajectory differences for two different spans are studied. Most papers exhibit Early Rise Slow Decline and Delayed Rise No Decline patterns. The growth and decay times, cumulative citation distribution, and peak characteristics of individual trajectories are redefined empirically. A detailed comparative study reveals our proposed methodology can detect all distinct trajectory classes.
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Submitted 10 September, 2023;
originally announced September 2023.
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Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 $^\circ$C
Authors:
Dhiren K. Pradhan,
David C. Moore,
Gwangwoo Kim,
Yunfei He,
Pariasadat Musavigharavi,
Kwan-Ho Kim,
Nishant Sharma,
Zirun Han,
Xingyu Du,
Venkata S. Puli,
Eric A. Stach,
W. Joshua Kennedy,
Nicholas R. Glavin,
Roy H. Olsson III,
Deep Jariwala
Abstract:
Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for many emerging, complex computing and sensing in harsh environments. Ferroelectric Al$_x$Sc$_{1-x}$N exhibits strong potential for utilization in NVM devices ope…
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Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for many emerging, complex computing and sensing in harsh environments. Ferroelectric Al$_x$Sc$_{1-x}$N exhibits strong potential for utilization in NVM devices operating at very high temperatures (> 500 $^\circ$C) given its stable and high remnant polarization (PR) above 100 $μ$C/cm$^2$ with demonstrated ferroelectric transition temperature (TC) > 1000 $^\circ$C. Here, we demonstrate an Al$_{0.68}$Sc$_{0.32}$N ferroelectric diode based NVM device that can reliably operate with clear ferroelectric switching up to 600 $^\circ$C with distinguishable On and Off states. The coercive field (EC) from the Pulsed I-V measurements is found to be -5.84 (EC-) and +5.98 (EC+) (+/- 0.1) MV/cm at room temperature (RT) and found to decrease with increasing temperature up to 600 $^\circ$C. The devices exhibit high remnant polarizations (> 100 $μ$C/cm$^2$) which are stable at high temperatures. At 500 $^\circ$C, our devices show 1 million read cycles and stable On-Off ratio above 1 for > 6 hours. Finally, the operating voltages of our AlScN ferrodiodes are < 15 V at 600 $^\circ$C which is well matched and compatible with Silicon Carbide (SiC) based high temperature logic technology, thereby making our demonstration a major step towards commercialization of NVM integrated high-T computers.
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Submitted 8 September, 2023;
originally announced September 2023.
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Pairs of inner projections and two applications
Authors:
Ramlal Debnath,
Deepak K. Pradhan,
Jaydeb Sarkar
Abstract:
Orthogonal projections onto closed subspaces of $H^2(\mathbb{D}^n)$ of the form $\varphi H^2(\mathbb{D}^n)$ for inner functions $\varphi$ on $\mathbb{D}^n$ are referred to as inner projections, where $H^2(\mathbb{D}^n)$ denotes the Hardy space over the open unit polydisc $\mathbb{D}^n$. In this paper, we classify pairs of commuting inner projections. We also present two seemingly independent appli…
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Orthogonal projections onto closed subspaces of $H^2(\mathbb{D}^n)$ of the form $\varphi H^2(\mathbb{D}^n)$ for inner functions $\varphi$ on $\mathbb{D}^n$ are referred to as inner projections, where $H^2(\mathbb{D}^n)$ denotes the Hardy space over the open unit polydisc $\mathbb{D}^n$. In this paper, we classify pairs of commuting inner projections. We also present two seemingly independent applications: the first is an answer to a question posed by R. G. Douglas, and the second is a complete classification of partially isometric truncated Toeplitz operators with inner symbols on the polydisc.
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Submitted 21 October, 2023; v1 submitted 13 July, 2023;
originally announced July 2023.
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Properties of symbolic powers of edge ideals of weighted oriented graphs
Authors:
Mousumi Mandal,
Dipak Kumar Pradhan
Abstract:
Let $D$ be a weighted oriented graph and $I(D)$ be its edge ideal.
We provide one method to find all the minimal generators of $ I_{\subseteq C} $, where $ C $ is a maximal strong vertex cover of $D$ and $ I_{\subseteq C} $ is the intersections of irreducible ideals associated to the strong vertex covers contained in $C$. If $ D^{\prime} $ is an induced digraph of $D$, under certain condition on…
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Let $D$ be a weighted oriented graph and $I(D)$ be its edge ideal.
We provide one method to find all the minimal generators of $ I_{\subseteq C} $, where $ C $ is a maximal strong vertex cover of $D$ and $ I_{\subseteq C} $ is the intersections of irreducible ideals associated to the strong vertex covers contained in $C$. If $ D^{\prime} $ is an induced digraph of $D$, under certain condition on the strong vertex covers of $ D^{\prime} $ and $D$, we show that $ {I(D^{\prime})}^{(s)} \neq {I(D^{\prime})}^s $ for some $s \geq 2$ implies $ {I(D)}^{(s)} \neq {I(D)}^s $. We characterize all the maximal strong vertex covers of $D$ such that at most one edge is oriented into each of its vertex and $w(x) \geq 2$ if $°_D(x)\geq 2 $ for all $x \in V(D)$. If $ D $ is a weighted rooted tree with degree of root is $ 1 $ and $ w(x) \geq 2 $ when $ °_D(x) \geq 2 $ for all $ x \in V(D) $, we show that $ {I(D)}^{(s)} = {I(D)}^s $ for all $s \geq 2$
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Submitted 15 June, 2023; v1 submitted 7 May, 2022;
originally announced May 2022.
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Symbolic defects of edge ideals of unicyclic graphs
Authors:
Mousumi Mandal,
Dipak Kumar Pradhan
Abstract:
We introduce the concept of minimum edge cover for an induced subgraph in a graph. Let $G$ be a unicyclic graph with a unique odd cycle and $I=I(G)$ be its edge ideal. We compute the exact values of all symbolic defects of $I$ using the concept of minimum edge cover for an induced subgraph in a graph. We describe one method to find the quasi-polynomial associated with the symbolic defects of edge…
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We introduce the concept of minimum edge cover for an induced subgraph in a graph. Let $G$ be a unicyclic graph with a unique odd cycle and $I=I(G)$ be its edge ideal. We compute the exact values of all symbolic defects of $I$ using the concept of minimum edge cover for an induced subgraph in a graph. We describe one method to find the quasi-polynomial associated with the symbolic defects of edge ideal $I$. We classify the class of unicyclic graphs when some power of maximal ideal annihilates $ I^{(s)}/I^s $ for any fixed $ s $. Also for those class of graphs, we compute the Hilbert function of the module $I^{(s)}/I^s$ for all $s.$
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Submitted 11 April, 2022;
originally announced April 2022.
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Design of acoustic diffraction plates for manipulating ultrasound in liquid Helium
Authors:
Ayanesh Maiti,
Dillip K. Pradhan,
Ambarish Ghosh
Abstract:
Many experiments in liquid Helium, such as the optical imaging of exploding electron bubbles, which enables research on individual particles under applied conditions, involve the usage of ultrasound generated by piezoelectric transducers. Previous studies either use planar transducers, which limits the maximum sound intensity and the spatial resolution, or curved transducers, which only allow obse…
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Many experiments in liquid Helium, such as the optical imaging of exploding electron bubbles, which enables research on individual particles under applied conditions, involve the usage of ultrasound generated by piezoelectric transducers. Previous studies either use planar transducers, which limits the maximum sound intensity and the spatial resolution, or curved transducers, which only allow observations at fixed foci and make it difficult to apply uniform electric fields. In this paper, we introduce the usage of acoustic diffraction plates in liquid Helium to amplify ultrasonic pressure oscillations at an arbitrary set of primary foci coupled with large counts of secondary foci, all of which can be freely moved around by changing the ultrasound frequency. The frequency dependence also allows us to generate controlled Faraday instabilities at the surface, which enables the generation of multi-electron bubbles with desired parameters.
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Submitted 11 March, 2022;
originally announced March 2022.
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Comparing symbolic powers of edge ideals of weighted oriented graphs
Authors:
Mousumi Mandal,
Dipak Kumar Pradhan
Abstract:
Let $D$ be a weighted oriented graph and $I(D)$ be its edge ideal. If $D$ contains an induced odd cycle of length $2n+1$, under certain condition we show that $ {I(D)}^{(n+1)} \neq {I(D)}^{n+1}$. We give necessary and sufficient condition for the equality of ordinary and symbolic powers of edge ideal of a weighted oriented graph having each edge in some induced odd cycle of it. We characterize the…
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Let $D$ be a weighted oriented graph and $I(D)$ be its edge ideal. If $D$ contains an induced odd cycle of length $2n+1$, under certain condition we show that $ {I(D)}^{(n+1)} \neq {I(D)}^{n+1}$. We give necessary and sufficient condition for the equality of ordinary and symbolic powers of edge ideal of a weighted oriented graph having each edge in some induced odd cycle of it. We characterize the weighted naturally oriented unicyclic graphs with unique odd cycles and weighted naturally oriented even cycles for the equality of ordinary and symbolic powers of their edge ideals. Let $ D^{\prime} $ be the weighted oriented graph obtained from $D$ after replacing the weights of vertices with non-trivial weights which are sinks, by trivial weights. We show that the symbolic powers of $I(D)$ and $I(D^{\prime})$ behave in a similar way. Finally, if $D$ is any weighted oriented star graph, we show that $ {I(D)}^{(s)} = {I(D)}^s $ for all $s \geq 2.$
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Submitted 7 October, 2021; v1 submitted 24 May, 2021;
originally announced May 2021.
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Regularity in weighted oriented graphs
Authors:
Mousumi Mandal,
Dipak Kumar Pradhan
Abstract:
Let $D$ be a weighted oriented graph with the underlying graph $G$ and $I(D), I(G) $ be the edge ideals corresponding to $D$ and $G$ respectively. We show that the regularity of edge ideal of a certain class of weighted oriented graph remains same even after adding certain kind of new edges to it. We also establish the relationship between the regularity of edge ideal of weighted oriented path and…
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Let $D$ be a weighted oriented graph with the underlying graph $G$ and $I(D), I(G) $ be the edge ideals corresponding to $D$ and $G$ respectively. We show that the regularity of edge ideal of a certain class of weighted oriented graph remains same even after adding certain kind of new edges to it. We also establish the relationship between the regularity of edge ideal of weighted oriented path and cycle with the regularity of edge ideal of their underlying graph when vertices of $V^+$ are sinks.
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Submitted 17 June, 2021; v1 submitted 19 September, 2020;
originally announced September 2020.
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Symbolic powers in weighted oriented graphs
Authors:
Mousumi Mandal,
Dipak Kumar Pradhan
Abstract:
Let $D$ be a weighted oriented graph with the underlying graph $G$ when vertices with non-trivial weights are sinks and $I(D), I(G) $ be the edge ideals corresponding to $D$ and $G,$ respectively. We give explicit description of the symbolic powers of $I(D)$ using the concept of strong vertex covers. We show that the ordinary and symbolic powers of $I(D)$ and $I(G)$ behave in a similar way. We pro…
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Let $D$ be a weighted oriented graph with the underlying graph $G$ when vertices with non-trivial weights are sinks and $I(D), I(G) $ be the edge ideals corresponding to $D$ and $G,$ respectively. We give explicit description of the symbolic powers of $I(D)$ using the concept of strong vertex covers. We show that the ordinary and symbolic powers of $I(D)$ and $I(G)$ behave in a similar way. We provide a description for symbolic powers and Waldschmidt constant of $I(D)$ for certain classes of weighted oriented graphs. When $D$ is a weighted oriented odd cycle we compute $\reg (I(D)^{(s)}/I(D)^s)$ and prove $\reg I(D)^{(s)}\leq\reg I(D)^s$ and show that equality holds when there is only one vertex with non-trivial weight.
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Submitted 5 June, 2021; v1 submitted 30 June, 2020;
originally announced June 2020.
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Submodules in polydomains and noncommutative varieties
Authors:
Susmita Das,
Deepak Kumar Pradhan,
Jaydeb Sarkar
Abstract:
Tensor product of Fock spaces is analogous to the Hardy space over the unit polydisc. This plays an important role in the development of noncommutative operator theory and function theory in the sense of noncommutative polydomains and noncommutative varieties. In this paper we study joint invariant subspaces of tensor product of full Fock spaces and noncommutative varieties. We also obtain, in par…
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Tensor product of Fock spaces is analogous to the Hardy space over the unit polydisc. This plays an important role in the development of noncommutative operator theory and function theory in the sense of noncommutative polydomains and noncommutative varieties. In this paper we study joint invariant subspaces of tensor product of full Fock spaces and noncommutative varieties. We also obtain, in particular, by using techniques of noncommutative varieties, a classification of joint invariant subspaces of $n$-fold tensor products of Drury-Arveson spaces.
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Submitted 23 April, 2020; v1 submitted 5 February, 2020;
originally announced February 2020.
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The reflexivity of hyperexpansions and their Cauchy dual operators
Authors:
Shubhankar Podder,
Deepak Kumar Pradhan
Abstract:
We discuss the reflexivity of hyperexpansions and their Cauchy dual operators. In particular, we show that any cyclic completely hyperexpansive operator is reflexive. We also establish the reflexivity of the Cauchy dual of an arbitrary $2$-hyperexpansive operator. As a consequence, we deduce the reflexivity of the so-called Bergman-type operator, that is, a left-invertible operator $T$ satisfying…
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We discuss the reflexivity of hyperexpansions and their Cauchy dual operators. In particular, we show that any cyclic completely hyperexpansive operator is reflexive. We also establish the reflexivity of the Cauchy dual of an arbitrary $2$-hyperexpansive operator. As a consequence, we deduce the reflexivity of the so-called Bergman-type operator, that is, a left-invertible operator $T$ satisfying the inequality $TT^* + (T^*T)^{-1} \leqslant 2 I_{\mathcal H}.$
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Submitted 16 December, 2019; v1 submitted 12 October, 2018;
originally announced October 2018.
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Effect of Substrate Temperature on Structural and Magnetic Properties of c-axis Ori-ented Spinel Ferrite Ni0.65Zn0.35Fe2O4 (NZFO) Thin Films
Authors:
Dhiren K. Pradhan,
Shalini Kumari,
Dillip K. Pradhan,
Ashok Kumar,
Ram S. Katiyar,
R. E. Cohen
Abstract:
Varying the substrate temperature changes structural and magnetic properties of spinel ferrite NZFO thin films. XRD of films grown at different temperature display only 004 reflections, without any secondary peaks, showing growth orientation along the c axis. We find an increase in crystalline quality of these thin films with the rise of substrate temperature. The surface topography of the thin fi…
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Varying the substrate temperature changes structural and magnetic properties of spinel ferrite NZFO thin films. XRD of films grown at different temperature display only 004 reflections, without any secondary peaks, showing growth orientation along the c axis. We find an increase in crystalline quality of these thin films with the rise of substrate temperature. The surface topography of the thin films grown on various growth temperatures conditions reveal that these films are smooth with low roughness, however the thin films grown at 800 C exhibit lowest average and rms roughness among all thin films. We find iron and nickel to be more oxidized i,e greater Fe and Ni content in films grown and annealed at 700 C and 800 C, compared to those grown at lower temperatures. The magnetic moment is observed to increase with an increase of substrate temperature and all thin films possess high saturation magnetization and low coercive field at room temperature. Films grown at 800 C exhibit a ferrimagnetic paramagnetic phase transition well above room temperature. The observed large magnetizations with soft magnetic behavior in NZFO thin films above room temperature suggest potential application in memory, spintronics, and multifunctional devices.
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Submitted 28 June, 2018; v1 submitted 6 April, 2018;
originally announced April 2018.
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Classification of Drury-Arveson-type Hilbert modules associated with certain directed graphs
Authors:
Sameer Chavan,
Deepak Kumar Pradhan,
Shailesh Trivedi
Abstract:
Given a directed Cartesian product $\mathscr T$ of locally finite, leafless, rooted directed trees $\mathscr T_1, \ldots, \mathscr T_d$ of finite joint branching index, one may associate with $\mathscr T$ the Drury-Arveson-type $\mathbb C[z_1, \ldots, z_d]$-Hilbert module $\mathscr H_{\mathfrak c_a}(\mathscr T)$ of vector-valued holomorphic functions on the open unit ball $\mathbb B^d$ in…
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Given a directed Cartesian product $\mathscr T$ of locally finite, leafless, rooted directed trees $\mathscr T_1, \ldots, \mathscr T_d$ of finite joint branching index, one may associate with $\mathscr T$ the Drury-Arveson-type $\mathbb C[z_1, \ldots, z_d]$-Hilbert module $\mathscr H_{\mathfrak c_a}(\mathscr T)$ of vector-valued holomorphic functions on the open unit ball $\mathbb B^d$ in $\mathbb C^d$, where $a >0.$ In case all directed trees under consideration are without branching vertices, $\mathscr H_{\mathfrak c_a}(\mathscr T)$ turns out to be the classical Drury-Arveson-type Hilbert module $\mathscr H_{a}$ associated with the reproducing kernel $\frac{1}{(1 - \langle{z}, {w}\rangle)^a}$ defined on $\mathbb B^d$. Unlike the case of $d=1$, the above association does not yield a reproducing kernel Hilbert module if we relax the assumption that $\mathscr T$ has finite joint branching index. The main result of this paper classifies all directed Cartesian product $\mathscr T$ for which the Hilbert modules $\mathscr H_{\mathfrak c_a}(\mathscr T)$ are isomorphic in case $a$ is a positive integer. One of the essential tools used to establish this isomorphism is an operator-valued representing measure arising from $\mathscr H_{\mathfrak c_a}(\mathscr T).$ Further, a careful analysis of these Hilbert modules allows us to prove that the cardinality of the $k^{\tiny \mbox{th}}$ generation $(k =0, 1, \ldots)$ of $\mathscr T_1, \ldots, \mathscr T_d$ are complete invariants for $\mathscr H_{\mathfrak c_a}(\cdot)$ provided $ad \neq 1$. Failure of this result in case $ad =1$ may be attributed to the von Neumann-Wold decomposition for isometries. Along the way, we identify the joint cokernel $E$ of the multiplication $d$-tuple $\mathscr M_{z}$ on $\mathscr H_{\mathfrak c_a}(\mathscr T)$ with orthogonal direct sum of tensor products of certain hyperplanes.
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Submitted 9 September, 2017;
originally announced September 2017.
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Dirichlet Spaces Associated With Locally Finite Rooted Directed Trees
Authors:
Sameer Chavan,
Deepak Kumar Pradhan,
Shailesh Trivedi
Abstract:
Let $\mathscr T=(V, \mathcal E)$ be a leafless, locally finite rooted directed tree. We associate with $\mathscr T$ a one parameter family of Dirichlet spaces $\mathscr H_q~(q \geqslant 1)$, which turn out to be Hilbert spaces of vector-valued holomorphic functions defined on the unit disc $\mathbb D$ in the complex plane. These spaces can be realized as reproducing kernel Hilbert spaces associate…
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Let $\mathscr T=(V, \mathcal E)$ be a leafless, locally finite rooted directed tree. We associate with $\mathscr T$ a one parameter family of Dirichlet spaces $\mathscr H_q~(q \geqslant 1)$, which turn out to be Hilbert spaces of vector-valued holomorphic functions defined on the unit disc $\mathbb D$ in the complex plane. These spaces can be realized as reproducing kernel Hilbert spaces associated with the positive definite kernel \begin{eqnarray*} κ_{\mathscr H_q}(z, w) = \sum_{n=0}^{\infty}\frac{(1)_n}{(q)_n}\,{z^n \overline{w}^n} ~P_{\langle e_{\mathsf{root}}\rangle} + \sum_{v \in V_{\prec}} \sum_{n=0}^{\infty} \frac{(n_v +2)_n}{(n_v + q+1)_n}\, {z^n \overline{w}^n}~P_{v}~(z, w \in \mathbb D), \end{eqnarray*} where $V_{\prec}$ denotes the set of branching vertices of $\mathscr T$, $n_v$ denotes the depth of $v \in V$ in $\mathscr T,$ and $P_{\langle e_{\mathsf{root}}\rangle}$, $~P_{v}~(v \in V_{\prec})$ are certain orthogonal projections. We also discuss some structural properties of the operator $\mathscr M_{z, q}$ of multiplication by $z$ on $\mathscr H_q.$ Further, we discuss the question of unitary equivalence of operators $\mathscr M^{(1)}_z$ and $\mathscr M^{(2)}_z$ of multiplication by $z$ on Dirichlet spaces $\mathscr H_q$ associated with directed trees $\mathscr T_1$ and $\mathscr T_2$ respectively.
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Submitted 18 February, 2017; v1 submitted 8 February, 2017;
originally announced February 2017.
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Multishifts on Directed Cartesian Product of Rooted Directed Trees
Authors:
Sameer Chavan,
Deepak Kumar Pradhan,
Shailesh Trivedi
Abstract:
We systematically develop the multivariable counterpart of the theory of weighted shifts on rooted directed trees. Capitalizing on the theory of product of directed graphs, we introduce and study the notion of multishifts on directed Cartesian product of rooted directed trees. This framework unifies the theory of weighted shifts on rooted directed trees and that of classical unilateral multishifts…
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We systematically develop the multivariable counterpart of the theory of weighted shifts on rooted directed trees. Capitalizing on the theory of product of directed graphs, we introduce and study the notion of multishifts on directed Cartesian product of rooted directed trees. This framework unifies the theory of weighted shifts on rooted directed trees and that of classical unilateral multishifts. Moreover, this setup brings into picture some new phenomena such as the appearance of system of linear equations in the eigenvalue problem for the adjoint of a multishift. In the first half of the paper, we focus our attention mostly on the multivariable spectral theory and function theory including finer analysis of various joint spectra and wandering subspace property for multishifts. In the second half, we separate out two special classes of multishifts, which we refer to as torally balanced and spherically balanced multishifts. The classification of these two classes is closely related to toral and spherical polar decompositions of multishifts. Furthermore, we exhibit a family of spherically balanced multishifts on $d$-fold directed Cartesian product $\mathscr T$ of rooted directed trees. These multishifts turn out be multiplication $d$-tuples $\mathscr M_{z, a}$ on certain reproducing kernel Hilbert spaces $\mathscr H_a$ of vector-valued holomorphic functions defined on the unit ball $\mathbb B^d$ in $\mathbb C^d$, which can be thought of as tree analogs of the multiplication $d$-tuples acting on the reproducing kernel Hilbert spaces associated with the kernels $\frac{1}{(1-\langle{z},{{w}\rangle})^a}~(z, w \in \mathbb B^d, a \in \mathbb N).$
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Submitted 11 September, 2016; v1 submitted 13 July, 2016;
originally announced July 2016.
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Effect of Temperature, Pressure and Aging time on the Relaxation Dynamics of Bi0.9Gd0.1Fe0.9Mn0.1O3 System: Direct Evidence of Glassy State and Pressure Induced Relaxor Behavior
Authors:
Satya N. Tripathy,
Zaneta Wojnarowska,
Justyna Knapik,
Arthur Chrobak,
Dillip K. Pradhan,
Sebastian Pawlus,
Marian Paluch
Abstract:
The fundamental aspects of relaxation dynamics in Bi0.9Gd0.1Fe0.9Mn0.1O3 multiferroic system have been reported. The study was carried out employing dielectric relaxation spectroscopy covering eight decades in frequency 0.01 to106 Hz and in a wide range of temperature 423 K to 153 K, hydrostatic pressure 0.1 MPa to 1765 MPa and aging time 0 s to 80000 s. The temperature dependent dielectric respon…
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The fundamental aspects of relaxation dynamics in Bi0.9Gd0.1Fe0.9Mn0.1O3 multiferroic system have been reported. The study was carried out employing dielectric relaxation spectroscopy covering eight decades in frequency 0.01 to106 Hz and in a wide range of temperature 423 K to 153 K, hydrostatic pressure 0.1 MPa to 1765 MPa and aging time 0 s to 80000 s. The temperature dependent dielectric response indicates three relaxations processes in the dynamic window of modulus formalism. Variable range hopping model of small polarons manifests the bulk conduction mechanism. The bulk and grain boundary contributions have been estimated using impedance spectroscopy analysis and reveal that localized process dominates the relaxation. The direct evidence of glassy feature is established below 200 K by aging experiments. Our findings provide a potential connection between nearly constant loss features appearing below 200 K with fastest relaxation of magnitude 0.16 eV. We also discuss the time temperature superposition behavior using modulus scaling. A pressure driven normal ferroelectric to relaxor behavior is witnessed above a critical pressure as a result of relative competition between short range and long range forces. Our findings focus the role of high pressure as a fundamental bridge between normal ferroelectrics and relaxors. Intriguingly, there exists a direct connection between chemical pressure induced by substitution and external hydrostatic pressure. These findings have robust fundamental importance on theoretical elucidation of relaxation dynamics in perovskite systems.
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Submitted 11 September, 2020; v1 submitted 11 May, 2016;
originally announced May 2016.
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Giant Magnetoelectric coupling in Single Phase Pb(Zr0.20Ti0.80)0.70Pd0.30O3-δ Multiferroics
Authors:
Shalini Kumari,
Dhiren K. Pradhan,
Nora Ortega,
Kallol Pradhan,
Christopher DeVreugd,
Gopalan Srinivasan,
Ashok Kumar,
J. F. Scott,
Ram S. Katiyar
Abstract:
During the last fifteen years, multiferroic (MF) research communities have been searching for an alternative room temperature MF material with large magnetoelectric (ME) coupling for possible applications in high density electronic components, low heat dissipation memory and logic devices. We have studied Pb(Zr0.20Ti0.80)0.70Pd0.30O3-δ (PZTP30) system with an unusually large (30%) palladium occupa…
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During the last fifteen years, multiferroic (MF) research communities have been searching for an alternative room temperature MF material with large magnetoelectric (ME) coupling for possible applications in high density electronic components, low heat dissipation memory and logic devices. We have studied Pb(Zr0.20Ti0.80)0.70Pd0.30O3-δ (PZTP30) system with an unusually large (30%) palladium occupancy in B site of PZT. This material exhibited a giant ME coupling coefficient ~0.36 mV/cm.Oe. Interestingly, this is the first time any room temperature single phase compound that showed ME trends, and magnitude similar to those in the well established mechanical strain-mediated ferroelectric and ferromagnetic composites; the latter ones are already in the commercial stage as nT/pT magnetic field sensors due to their large ME values. The presence of Pd in PZTP30 has been confirmed by XPS and XRF studies and assigned with related binding energies of Pd+2 and Pd+4 ions as 336.37 eV, 342.9 eV, and 337.53 eV, 343.43 eV, respectively, which may be the origin of room temperature magnetism in Pd substituted PZT ceramics. A sharp first order ferroelectric phase transition was observed at ~569 K (+/-5 K) that is confirmed from dielectric, Raman, and thermal analysis. Both ferromagnetic and ferroelectric orderings with large ME coupling were found above room temperature, a significant step forward in the development of single phase ME material with enhanced functionalities.
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Submitted 24 March, 2016;
originally announced March 2016.
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Sum of two maximal monotone operators in a general Banach space is maximal
Authors:
S. R. Pattanaik,
D. K. Pradhan,
S. Pradhan
Abstract:
In a real Banach space, we first prove that the sum of a monotone operator of type (FPV) and maximal monotone operator Rockafellar's constraint qualification is maximal. This prove leads to the solution of most interesting long-time outstanding problem in monotone operator theory is the sum problem.
In a real Banach space, we first prove that the sum of a monotone operator of type (FPV) and maximal monotone operator Rockafellar's constraint qualification is maximal. This prove leads to the solution of most interesting long-time outstanding problem in monotone operator theory is the sum problem.
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Submitted 7 February, 2019; v1 submitted 19 May, 2015;
originally announced May 2015.
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Maximality of the sum of the monotone operator of type (FPV) and a maximal monotone operator
Authors:
S. R. Pattanaik,
D. K. Pradhan
Abstract:
Here, question raised by Borwein and Yao has been settled by establishing that the sum of two maximal monotone operators A and B is maximal monotone with the condition that A is of type (FPV) and satisfies Rockafellar's constraints qualification. Also we have proved that A+B is of type (FPV) without assuming convexity on the domain of A.
Here, question raised by Borwein and Yao has been settled by establishing that the sum of two maximal monotone operators A and B is maximal monotone with the condition that A is of type (FPV) and satisfies Rockafellar's constraints qualification. Also we have proved that A+B is of type (FPV) without assuming convexity on the domain of A.
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Submitted 7 February, 2019; v1 submitted 23 November, 2014;
originally announced November 2014.
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On the Design and Optimization of a Quantum Polynomial-Time Attack on Elliptic Curve Cryptography
Authors:
Donny Cheung,
Dmitri Maslov,
Jimson Mathew,
Dhiraj K. Pradhan
Abstract:
We consider a quantum polynomial-time algorithm which solves the discrete logarithm problem for points on elliptic curves over $GF(2^m)$. We improve over earlier algorithms by constructing an efficient circuit for multiplying elements of binary finite fields and by representing elliptic curve points using a technique based on projective coordinates. The depth of our proposed implementation, exec…
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We consider a quantum polynomial-time algorithm which solves the discrete logarithm problem for points on elliptic curves over $GF(2^m)$. We improve over earlier algorithms by constructing an efficient circuit for multiplying elements of binary finite fields and by representing elliptic curve points using a technique based on projective coordinates. The depth of our proposed implementation, executable in the Linear Nearest Neighbor (LNN) architecture, is $O(m^2)$, which is an improvement over the previous bound of $O(m^3)$ derived assuming no architectural restrictions.
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Submitted 6 February, 2009; v1 submitted 4 October, 2007;
originally announced October 2007.
