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Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication
Authors:
Piotr J Cegielski,
Anna Lena Giesecke,
Stefanie Neutzner,
Caroline Porschatis,
Marina Gandini,
Daniel Schall,
Carlo AR Perini,
Jens Bolten,
Stephan Suckow,
Satender Kataria,
Bartos Chmielak,
Thorsten Wahlbrink,
Annamaria Petrozza,
Max C Lemme
Abstract:
Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low temperature processing leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through cost…
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Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low temperature processing leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through costly and inefficient hybrid integration of III-V semiconductors. Until now however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography and therefore on existing semiconductor manufacturing infrastructure has been established. Here, the first methylammonium lead iodide perovskite micro-disc lasers monolithically integrated into silicon nitride PICs by such a top-down process is presented. The lasers show a record low lasing threshold of 4.7 $μ$Jcm$^{-2}$ at room temperature for monolithically integrated lasers, which are CMOS compatible and can be integrated in the back-end-of-line (BEOL) processes.
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Submitted 18 July, 2019;
originally announced July 2019.
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Integrated perovskite lasers on silicon nitride waveguide platform by cost-effective high throughput fabrication
Authors:
Piotr Jacek Cegielski,
Stefanie Neutzner,
Caroline Porschatis,
Holger Lerch,
Jens Bolten,
Stephan Suckow,
Ajay Ram Srimath Kandada,
Bartos Chmielak,
Annamaria Petrozza,
Thorsten Wahlbrink,
Anna Lena Giesecke
Abstract:
Metal-halide perovskites are a class of solution processed materials with remarkable optoelectronic properties such as high photoluminescence quantum yields and long carrier lifetimes, which makes them promising for a wide range of efficient photonic devices. In this work, we demonstrate the first successful integration of a perovskite laser onto a silicon nitride photonic chip. High throughput, l…
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Metal-halide perovskites are a class of solution processed materials with remarkable optoelectronic properties such as high photoluminescence quantum yields and long carrier lifetimes, which makes them promising for a wide range of efficient photonic devices. In this work, we demonstrate the first successful integration of a perovskite laser onto a silicon nitride photonic chip. High throughput, low cost optical lithography is used followed by indirect structuring of the perovskite waveguide. We embed methylammonium lead tri-iodide (MAPbI3) in a pre-patterned race-track microresonator and couple the emitted light to an integrated photonic waveguide. We clearly observe the build-up of spectrally narrow lasing modes at room temperature upon a pump threshold fluence of $19.6 μJcm^{-2}$. Our results evidence the possibility of on-chip lasers based on metal-halide perovskites with industry relevance on a commercially available dielectric photonic platform, which is a step forward towards low-cost integrated photonic devices.
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Submitted 4 July, 2017;
originally announced July 2017.
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Graphene photodetectors with a bandwidth larger than 76 GHz fabricated in a 6 inch wafer process line
Authors:
Daniel Schall,
Caroline Porschatis,
Martin Otto,
Daniel Neumaier
Abstract:
In recent years, the data traffic has grown exponentially and the forecasts indicate a huge market that could be addressed by communication infrastructure and service providers. However, the processing capacity, space, and energy consumption of the available technology is a serious bottleneck for the exploitation of these markets. Chip-integrated optical communication systems hold the promise of s…
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In recent years, the data traffic has grown exponentially and the forecasts indicate a huge market that could be addressed by communication infrastructure and service providers. However, the processing capacity, space, and energy consumption of the available technology is a serious bottleneck for the exploitation of these markets. Chip-integrated optical communication systems hold the promise of significantly improving these issues related to the current technology. At the moment, the answer to the question which material is best suited for ultrafast chip integrated communication systems is still open. In this manuscript we report on ultrafast graphene photodetectors with a bandwidth of more than 76 GHz well suitable for communication links faster than 100 GBit/s per channel. We extract an upper value of 7.2 ps for the timescale in which the bolometric photoresponse in graphene is generated. The photodetectors were fabricated on 6 inch silicon-on-insulator wafers in a semiconductor pilot line, demonstrating the scalable fabrication of high-performance graphene based devices.
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Submitted 16 March, 2017;
originally announced March 2017.