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Buffer-less Gallium Nitride High Electron Mobility Heterostructures on Silicon
Authors:
Saptarsi Ghosh,
Martin Frentrup,
Alexander M. Hinz,
James W. Pomeroy,
Daniel Field,
David J. Wallis,
Martin Kuball,
Rachel A. Oliver
Abstract:
Thick metamorphic buffers are perceived to be indispensable for the heteroepitaxial integration of III-V semiconductors on silicon substrates with large thermal expansion and lattice mismatches. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistor (HEMT) heterostructures impose a substantial thermal resistance, throttling heat extraction, which reduces device ef…
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Thick metamorphic buffers are perceived to be indispensable for the heteroepitaxial integration of III-V semiconductors on silicon substrates with large thermal expansion and lattice mismatches. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistor (HEMT) heterostructures impose a substantial thermal resistance, throttling heat extraction, which reduces device efficiency and lifetime. Herein, bypassing the buffer, we demonstrate the direct growth of GaN after the AlN nucleation layer on silicon by metal-organic vapor phase epitaxy (MOVPE). By varying reactor pressure, we modulate the growth stress in the submicron epilayers and realise threading dislocation densities similar to that in thick buffered structures. We achieve a GaN-to-substrate thermal resistance of (11(+/-)4) ((m^2)K(GW^-1)), an order of magnitude reduction over conventional designs on silicon and one of the lowest on any non-native substrate. AlGaN/AlN/GaN heterojunctions on this platform show a characteristic 2D electron gas (2DEG), the room-temperature Hall-effect mobility of which, at over 2000 (cm^2/(V-s)), rivals the best-reported values. The low-temperature magnetoresistance of this 2DEG shows clear Shubnikov-de-Haas oscillations, a quantum lifetime > 0.180 ps, and tell-tale signatures of spin-splitting. These results may establish a new paradigm for nitride HEMTs, potentially accelerating applications from energy-efficient transistors to fundamental investigations on electron dynamics in this 2D wide-bandgap system.
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Submitted 12 July, 2024;
originally announced July 2024.
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Thick adherent diamond films on AlN with low thermal barrier resistance
Authors:
Soumen Mandal,
Jerome Cuenca,
Fabien Massabuau,
Chao Yuan,
Henry Bland,
James W. Pomeroy,
David Wallis,
Tim Batten,
David Morgan,
Rachel Oliver,
Martin Kuball,
Oliver A. Williams
Abstract:
Growth of $>$100 $μ$m thick diamond layer adherent on aluminium nitride is presented in this work. While thick films failed to adhere on untreated AlN films, hydrogen/nitrogen plasma treated AlN films retained the thick diamond layers. Clear differences in zeta potential measurement confirms the surface modification due to hydrogen/nitrogen plasma treatment. Areal Raman maps showed an increase in…
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Growth of $>$100 $μ$m thick diamond layer adherent on aluminium nitride is presented in this work. While thick films failed to adhere on untreated AlN films, hydrogen/nitrogen plasma treated AlN films retained the thick diamond layers. Clear differences in zeta potential measurement confirms the surface modification due to hydrogen/nitrogen plasma treatment. Areal Raman maps showed an increase in non-diamond carbon in the initial layers of diamond grown on pre-treated AlN. The presence of non-diamond carbon has minimal effect on the interface between diamond and AlN. The surfaces studied with x-ray photoelectron spectroscopy (XPS) revealed a clear distinction between pre-treated and untreated samples. The surface aluminium goes from nitrogen rich environment to an oxygen rich environment after pre-treatment. Cross section transmission electron microscopy shows a clean interface between diamond and AlN. Thermal barrier resistance between diamond and AlN was found to be in the range of 16 m$^2$K/GW which is a large improvement on the current state-of-the-art.
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Submitted 4 July, 2019;
originally announced July 2019.
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Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology
Authors:
Hareesh Chandrasekar,
Michael J. Uren,
Michael A. Casbon,
Hassan Hirshy,
Abdalla Eblabla,
Khaled Elgaid,
James W. Pomeroy,
Paul J. Tasker,
Martin Kuball
Abstract:
Intrinsic limits to temperature-dependent substrate loss for GaN-on-Si technology, due to the change in resistivity of the substrate with temperature, are evaluated using an experimentally validated device simulation framework. Effect of room temperature substrate resistivity on temperature-dependent CPW line loss at various operating frequency bands are then presented. CPW lines for GaN-on-high r…
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Intrinsic limits to temperature-dependent substrate loss for GaN-on-Si technology, due to the change in resistivity of the substrate with temperature, are evaluated using an experimentally validated device simulation framework. Effect of room temperature substrate resistivity on temperature-dependent CPW line loss at various operating frequency bands are then presented. CPW lines for GaN-on-high resistivity Si are shown to have a pronounced temperature-dependence for temperatures above 150°C and have lower substrate losses for frequencies above the X-band. On the other hand, GaN-on-low resistivity Si is shown to be more temperature-insensitive and have lower substrate losses than even HR-Si for lower operating frequencies. The effect of various CPW geometries on substrate loss is also presented to generalize the discussion. These results are expected to act as a benchmark for temperature dependent substrate loss in GaN-on-Si RF technology.
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Submitted 28 January, 2019;
originally announced January 2019.
