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Pentagonal nanowires from topological crystalline insulators: a platform for intrinsic core-shell nanowires and higher-order topology
Authors:
Ghulam Hussain,
Giuseppe Cuono,
Piotr Dziawa,
Dorota Janaszko,
Janusz Sadowski,
Slawomir Kret,
Boguslawa Kurowska,
Jakub Polaczynski,
Kinga Warda,
Shahid Sattar,
Carlo M. Canali,
Alexander Lau,
Wojciech Brzezicki,
Tomasz Story,
Carmine Autieri
Abstract:
We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, w…
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We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, we show that the interplay between ionic and covalent bonds favors the formation of pentagonal NWs. Additionally, we find that this pentagonal structure is more likely to occur in tellurides than in selenides. The disclination and twin boundary cause the electronic states originating from the NW core region to generate a conducting band connecting the valence and conduction bands, creating a symmetry-enforced metallic phase. The metallic core band has opposite slopes in the cases of Sn and Te twin boundary, while the bands from the shell are insulating. We finally study the electronic and topological properties of pentagonal NWs unveiling their potential as a new platform for higher-order topology and fractional charge. These pentagonal NWs represent a unique case of intrinsic core-shell one-dimensional nanostructures with distinct structural, electronic and topological properties between the core and the shell region.
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Submitted 17 May, 2024; v1 submitted 7 January, 2024;
originally announced January 2024.
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3D Topological Semimetal Phases of Strained $α$-Sn on Insulating Substrate
Authors:
Jakub Polaczyński,
Gauthier Krizman,
Alexandr Kazakov,
Bartłomiej Turowski,
Joaquín Bermejo Ortiz,
Rafał Rudniewski,
Tomasz Wojciechowski,
Piotr Dłużewski,
Marta Aleszkiewicz,
Wojciech Zaleszczyk,
Bogusława Kurowska,
Zahir Muhammad,
Marcin Rosmus,
Natalia Olszowska,
Louis-Anne De Vaulchier,
Yves Guldner,
Tomasz Wojtowicz,
Valentine V. Volobuev
Abstract:
$α$-Sn is an elemental topological material, whose topological phases can be tuned by strain and magnetic field. Such tunability offers a substantial potential for topological electronics. However, InSb substrates, commonly used to stabilize $α…
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$α$-Sn is an elemental topological material, whose topological phases can be tuned by strain and magnetic field. Such tunability offers a substantial potential for topological electronics. However, InSb substrates, commonly used to stabilize $α$-Sn allotrope, suffer from parallel conduction, restricting transport investigations and potential applications. Here, the successful MBE growth of high-quality $α$-Sn layers on insulating, hybrid CdTe/GaAs(001) substrates, with bulk electron mobility approaching 20000 cm$^2$V$^{-1}$s$^{-1}$ is reported. The electronic properties of the samples are systematically investigated by independent complementary techniques, enabling thorough characterization of the 3D Dirac (DSM) and Weyl (WSM) semimetal phases induced by the strains and magnetic field, respectively. Magneto-optical experiments, corroborated with band structure modeling, provide an exhaustive description of the bulk states in the DSM phase. The modeled electronic structure is directly observed in angle-resolved photoemission spectroscopy, which reveals linearly dispersing bands near the Fermi level. The first detailed study of negative longitudinal magnetoresistance relates this effect to the chiral anomaly and, consequently, to the presence of WSM. Observation of the $π$ Berry phase in Shubnikov-de Haas oscillations agrees with the topologically non-trivial nature of the investigated samples. Our findings establish $α$-Sn as an attractive topological material for exploring relativistic physics and future applications.
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Submitted 13 June, 2024; v1 submitted 7 September, 2023;
originally announced September 2023.
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Signatures of dephasing by mirror-symmetry breaking in weak-antilocalization magnetoresistance across the topological transition in Pb$_{1-x}$Sn$_{x}$Se
Authors:
Alexander Kazakov,
Wojciech Brzezicki,
Timo Hyart,
Bartłomiej Turowski,
Jakub Polaczyński,
Zbigniew Adamus,
Marta Aleszkiewicz,
Tomasz Wojciechowski,
Jaroslaw Z. Domagala,
Ondrej Caha,
Andrei Varykhalov,
Gunther Springholz,
Tomasz Wojtowicz,
Valentine V. Volobuev,
Tomasz Dietl
Abstract:
Many conductors, including recently studied Dirac materials, show saturation of coherence length on decreasing temperature. This surprising phenomenon is assigned to external noise, residual magnetic impurities or two-level systems specific to non-crystalline solids. Here, by considering the SnTe-class of compounds as an example, we show theoretically that breaking of mirror symmetry deteriorates…
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Many conductors, including recently studied Dirac materials, show saturation of coherence length on decreasing temperature. This surprising phenomenon is assigned to external noise, residual magnetic impurities or two-level systems specific to non-crystalline solids. Here, by considering the SnTe-class of compounds as an example, we show theoretically that breaking of mirror symmetry deteriorates Berry's phase quantization, leading to additional dephasing in weak-antilocalization magnetoresistance (WAL-MR). Our experimental studies of WAL-MR corroborate these theoretical expectations in (111) Pb$_{1-x}$Sn$_x$Se thin film with Sn contents $x$ corresponding to both topological crystalline insulator and topologically trivial phases. In particular, we find the shortening of the phase coherence length in samples with intentionally broken mirror symmetry. Our results indicate that the classification of quantum transport phenomena into universality classes should encompass, in addition to time-reversal and spin-rotation invariances, spatial symmetries in specific systems.
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Submitted 21 June, 2021; v1 submitted 18 February, 2020;
originally announced February 2020.
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Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors
Authors:
Maria Spies,
Jakub Polaczyński,
Akhil Ajay,
Dipankar Kalita,
Jonas Lähnemann,
Bruno Gayral,
Martien I. den Hertog,
Eva Monroy
Abstract:
Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumina…
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Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current-voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the impinging optical power when the nanowire diameter is below a certain threshold ($\approx$ 80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination.
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Submitted 29 April, 2019;
originally announced April 2019.
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Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors
Authors:
Maria Spies,
Martien I. Den Hertog,
Pascal Hille,
Jörg Schörmann,
Jakub Polaczyński,
Bruno Gayral,
Martin Eickhoff,
Eva Monroy,
Jonas Lähnemann
Abstract:
We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such a way that the application of positive or negative bias leads to an enhancement of the collection of photogenerated carriers from the GaN/AlN superlattice or from the GaN base, respectively, as confirmed by electron beam…
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We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such a way that the application of positive or negative bias leads to an enhancement of the collection of photogenerated carriers from the GaN/AlN superlattice or from the GaN base, respectively, as confirmed by electron beam-induced current measurements. The devices display enhanced response in the ultraviolet A ($\approx$ 330-360 nm) / B ($\approx$ 280-330 nm) spectral windows under positive/negative bias. The result is explained by correlation of the photocurrent measurements with scanning transmission electron microscopy observations of the same single nanowire, and semi-classical simulations of the strain and band structure in one and three dimensions.
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Submitted 27 October, 2017;
originally announced December 2017.
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Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures
Authors:
A. Ajay,
C. B. Lim,
D. A. Browne,
J. Polaczynski,
E. Bellet-Amalric,
J. Bleuse,
M. I. den Hertog,
E. Monroy
Abstract:
In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 microns. We compare the effect of doping the GaN sections with Si and Ge, and we discuss the variation of free-carrier screening with the doping density and well/nanodisk size. We obser…
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In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 microns. We compare the effect of doping the GaN sections with Si and Ge, and we discuss the variation of free-carrier screening with the doping density and well/nanodisk size. We observe that nanowire heterostructures consistently present longer photoluminescence decay times than their planar counterparts, which supports the existence of an in-plane piezoelectric field associated to the shear component of the strain tensor, leading to lateral electron-hole separation. We report intersubband absorption covering 1.45 microns to 1.75 microns using Ge-doped quantum wells, with comparable performance to well-studied Si-doped planar heterostructures. We also report comparable intersubband absorption in Si- and Ge-doped nanowire heterostructures indicating that the choice of dopant is not an intrinsic barrier for observing intersubband phenomena. In addition, we calculate the spectral shift of the intersubband absorption due to many body effects as a function of the doping concentration.
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Submitted 8 August, 2017; v1 submitted 11 May, 2017;
originally announced May 2017.
