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Static strain tuning of quantum dots embedded in a photonic wire
Authors:
D. Tumanov,
N. Vaish,
H. A. Nguyen,
Y. Curé,
J. -M. Gérard,
J. Claudon,
F. Donatini,
J. -Ph. Poizat
Abstract:
We use strain to statically tune the semiconductor band gap of individual InAs quantum dots (QDs) embedded in a GaAs photonic wire featuring very efficient single photon collection efficiency. Thanks to the geometry of the structure, we are able to shift the QD excitonic transition by more than 20 meV by using nano-manipulators to apply the stress. Moreover, owing to the strong transverse strain g…
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We use strain to statically tune the semiconductor band gap of individual InAs quantum dots (QDs) embedded in a GaAs photonic wire featuring very efficient single photon collection efficiency. Thanks to the geometry of the structure, we are able to shift the QD excitonic transition by more than 20 meV by using nano-manipulators to apply the stress. Moreover, owing to the strong transverse strain gradient generated in the structure, we can relatively tune two QDs located in the wire waveguide and bring them in resonance, opening the way to the observation of collective effects such as superradiance.
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Submitted 9 February, 2018;
originally announced February 2018.
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Giant non-linear interaction between two optical beams via a quantum dot embeddedin a photonic wire
Authors:
H. A Nguyen,
T. Grange,
B Reznychenko,
I. Yeo,
P. -L De Assis,
D Tumanov,
F Fratini,
N Malik,
E Dupuy,
N Gregersen,
A Auffèves,
J. -M Gérard,
J Claudon,
J. -Ph Poizat
Abstract:
Optical non-linearities usually appear for large intensities, but discrete transitions allow for giant non-linearities operating at the single photon level. This has been demonstrated in the last decade for a single optical mode with cold atomic gases, or single two-level systems coupled to light via a tailored photonic environment. Here we demonstrate a two-modes giant non-linearity by using a…
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Optical non-linearities usually appear for large intensities, but discrete transitions allow for giant non-linearities operating at the single photon level. This has been demonstrated in the last decade for a single optical mode with cold atomic gases, or single two-level systems coupled to light via a tailored photonic environment. Here we demonstrate a two-modes giant non-linearity by using a three-level structure in a single semiconductor quantum dot (QD) embedded in a photonic wire antenna. The large coupling efficiency and the broad operation bandwidth of the photonic wire enable us to have two different laser beams interacting with the QD in order to control the reflectivity of a laser beam with the other one using as few as 10 photons per QD lifetime. We discuss the possibilities offered by this easily integrable system for ultra-low power logical gates and optical quantum gates.
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Submitted 9 March, 2018; v1 submitted 11 May, 2017;
originally announced May 2017.
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Strain-gradient mapping of semiconductor quantum dots
Authors:
P. -L De Assis,
I Yeo,
A Gloppe,
H. A. Nguyen,
D Tumanov,
E Dupont-Ferrier,
N. S. Malik,
E Dupuy,
J Claudon,
J. -M Gérard,
Alexia Auffèves,
O Arcizet,
Maxime Richard,
J. -Ph Poizat
Abstract:
In the context of fast developing quantum technologies, locating single quantum objects embedded in solid or fluid environment while keeping their properties unchanged is a crucial requirement as well as a challenge. Such "quantum microscopes" have been demonstrated already for NV-centers embedded in diamond [1], and for single atoms within an ultracold gas [2]. In this work, we demonstrate a new…
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In the context of fast developing quantum technologies, locating single quantum objects embedded in solid or fluid environment while keeping their properties unchanged is a crucial requirement as well as a challenge. Such "quantum microscopes" have been demonstrated already for NV-centers embedded in diamond [1], and for single atoms within an ultracold gas [2]. In this work, we demonstrate a new method to determine non-destructively the position of randomly distributed semiconductor quantum dots (QDs) deeply embedded in a solid photonic waveguide. By setting the wire in an oscillating motion, we generate large stress gradients across the QDs plane. We then exploit the fact that the QDs emission frequency is highly sensitive to the local material stress [3-5] to infer their positions with an accuracy ranging from +/- 35 nm down to +/-1 nm for close-to-axis QDs.
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Submitted 15 September, 2016; v1 submitted 21 July, 2016;
originally announced July 2016.
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Extraction of the homogeneous linewidth of a fast spectrally diffusing line
Authors:
S. Bounouar,
A. Trichet,
M. Elouneg-Jamroz,
R. André,
E. Bellet-Amalric,
C. Bougerol,
M. Den Hertog,
K. Kheng,
S. Tatarenko,
J. -Ph. Poizat
Abstract:
We present a simple method to extract the homogeneous linewidth of a single photon emitter line exhibiting fast (down to 1 ns) spectral diffusion (SD). It is based on a recently developed technique using photon correlation measurements on half of the line. Here we show that the SD induced bunching depends on the ratio between the width of the homogeneous line and the spectral diffusion amplitude.…
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We present a simple method to extract the homogeneous linewidth of a single photon emitter line exhibiting fast (down to 1 ns) spectral diffusion (SD). It is based on a recently developed technique using photon correlation measurements on half of the line. Here we show that the SD induced bunching depends on the ratio between the width of the homogeneous line and the spectral diffusion amplitude. Using this technique on a CdSe/ZnSe quantum dot, we investigate the temperature dependence of its fast SD amplitude and its homogeneous excitonic linewidth.
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Submitted 22 May, 2012;
originally announced May 2012.
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Exciton-phonon coupling efficiency in CdSe quantum dots embedded in ZnSe nanowires
Authors:
S. Bounouar,
C. Morchutt,
M. Elouneg-Jamroz,
L. Besombes,
R. André,
E. Bellet-Amalric,
C. Bougerol,
M. Den Hertog,
K. Kheng,
S. Tatarenko,
J. -Ph. Poizat
Abstract:
Exciton luminescence of a CdSe quantum dot (QD) inserted in a ZnSe nanowire is strongly influenced by the dark exciton states. Because of the small size of these QDs (2-5nm), exchange interaction between hole and electron is highly enhanced and we measured large energy splitting between bright and dark exciton states ($ΔE\in [4, 9.2 ]$ meV) and large spin flip rates between these states. Statistic…
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Exciton luminescence of a CdSe quantum dot (QD) inserted in a ZnSe nanowire is strongly influenced by the dark exciton states. Because of the small size of these QDs (2-5nm), exchange interaction between hole and electron is highly enhanced and we measured large energy splitting between bright and dark exciton states ($ΔE\in [4, 9.2 ]$ meV) and large spin flip rates between these states. Statistics on many QDs showed that this splitting depends on the QD size. Moreover, we measured an increase of the spin flip rate to the dark states with increasing energy splitting. We explain this observation with a model taking into account the fact that the exciton-phonon interaction depends on the bright to dark exciton energy splitting as well as on the size and shape of the exciton wave function. It also has consequences on the exciton line intensity at high temperature.
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Submitted 23 September, 2011; v1 submitted 16 September, 2011;
originally announced September 2011.
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Subnanosecond spectral diffusion of a single quantum dot in a nanowire
Authors:
G. Sallen,
A. Tribu,
T. Aichele,
R. André,
L. Besombes,
C. Bougerol,
M. Richard,
S. Tatarenko,
K. Kheng,
J. -Ph. Poizat
Abstract:
We have studied spectral diffusion of the photoluminescence of a single CdSe quantum dot inserted in a ZnSe nanowire. We have measured the characteristic diffusion time as a function of pumping power and temperature using a recently developed technique [G. Sallen et al, Nature Photon. \textbf{4}, 696 (2010)] that offers subnanosecond resolution. These data are consistent with a model where only a…
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We have studied spectral diffusion of the photoluminescence of a single CdSe quantum dot inserted in a ZnSe nanowire. We have measured the characteristic diffusion time as a function of pumping power and temperature using a recently developed technique [G. Sallen et al, Nature Photon. \textbf{4}, 696 (2010)] that offers subnanosecond resolution. These data are consistent with a model where only a \emph{single} carrier wanders around in traps located in the vicinity of the quantum dot.
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Submitted 4 May, 2011;
originally announced May 2011.
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Monitoring the Bragg peak location of 73 MeV/u carbon ions by means of prompt $γ$-ray measurements
Authors:
E. Testa,
M. Bajard,
M. Chevallier,
D. Dauvergne,
F. Le Foulher,
J. -C. Poizat,
C. Ray,
M. Testa,
N. Freud,
J. -M. Létang
Abstract:
By means of a time-of-flight technique, we measured the longitudinal profile of prompt $γ$-rays emitted by 73 MeV/u $^{13}$C ions irradiating a PMMA target. This technique allowed us to minimize the shielding against neutrons and scattered $γ$-rays, and to correlate prompt gamma emission to the ion path. This correlation, together with a high counting rate, paves the way toward real-time monitor…
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By means of a time-of-flight technique, we measured the longitudinal profile of prompt $γ$-rays emitted by 73 MeV/u $^{13}$C ions irradiating a PMMA target. This technique allowed us to minimize the shielding against neutrons and scattered $γ$-rays, and to correlate prompt gamma emission to the ion path. This correlation, together with a high counting rate, paves the way toward real-time monitoring of the longitudinal dose profile during ion therapy treatments. Moreover, the time correlation between the prompt gamma detection and the transverse position of the incident ions measured by a beam monitor can provide real-time 3D control of the irradiation.
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Submitted 1 September, 2008;
originally announced September 2008.
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Electron gas polarization effect induced by heavy H-like ions of moderate velocities channeled in a silicon crystal
Authors:
D. Dauvergne,
A. Bräuning-Demian,
F. Bosch,
H. Bräuning,
M. Chevallier,
C. Cohen,
A. Gumberidze,
S. Hagmann,
A. L'hoir,
R. Kirsch,
C. Kozhuharov,
D. Liesen,
P. H. Mokler,
J. -C. Poizat,
C. Ray,
J. -P. Rozet,
Th. Stöhlker,
S. Toleikis,
M. Toulemonde,
P. Verma
Abstract:
We report on the observation of a strong perturbation of the electron gas induced by 20 MeV/u U$^{91+}$ ions and 13 MeV/u Pb$^{81+}$ ions channeled in silicon crystals. This collective response (wake effect) in-duces a shift of the continuum energy level by more than 100 eV, which is observed by means of Radiative Electron Capture into the K and L-shells of the projectiles. We also observe an in…
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We report on the observation of a strong perturbation of the electron gas induced by 20 MeV/u U$^{91+}$ ions and 13 MeV/u Pb$^{81+}$ ions channeled in silicon crystals. This collective response (wake effect) in-duces a shift of the continuum energy level by more than 100 eV, which is observed by means of Radiative Electron Capture into the K and L-shells of the projectiles. We also observe an increase of the REC probability by 20-50% relative to the probability in a non-perturbed electron gas. The energy shift is in agreement with calculations using the linear response theory, whereas the local electron density enhancement is much smaller than predicted by the same model. This shows that, for the small values of the adiabaticity parameter achieved in our experiments, the density fluctuations are not strongly localized at the vicinity of the heavy ions.
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Submitted 13 September, 2005;
originally announced September 2005.
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Summary of experimental studies at CERN on a positron source using crystal effects
Authors:
X. Artru,
V. Baier,
K. Beloborodov,
A. Bogdanov,
A. Bukin,
S. Burdin,
R. Chehab,
M. Chevallier,
R. Cizeron,
D. Dauvergne,
T. Dimova,
V. Druzhinin,
M. Dubrovin,
L. Gatignon,
V. Goluev,
A. Jejcic,
P. Keppker,
R. Kirsch,
V. Kulibaba,
P. Lautesse,
J. Major,
J. -C. Poizat,
A. Potylitsin,
J. Remillieux,
S. Serednyakov
, et al. (3 additional authors not shown)
Abstract:
New kind of positron sources for future linear colliders, where the converter is a tungsten crystal oriented on the <111> axis, has been studied at CERN in the WA103 experiment. In such sources the photons which create the $e^+ e^-$ pairs result from channeling radiation and coherent bremsstrahlung. In this experiment electron beams of 6 and 10 GeV were sent on different kinds of targets: a 4 mm…
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New kind of positron sources for future linear colliders, where the converter is a tungsten crystal oriented on the <111> axis, has been studied at CERN in the WA103 experiment. In such sources the photons which create the $e^+ e^-$ pairs result from channeling radiation and coherent bremsstrahlung. In this experiment electron beams of 6 and 10 GeV were sent on different kinds of targets: a 4 mm thick crystal, a 8 mm thick crystal and a compound taraget (4 mm crystal + 4 mm amorphous disk). An amorphous tungsten target 20 mm thick was also used for comparison with the 8 mm crystal. Tracks of outgoing charged particles were detected and analyzed by a drift chamber in a magnetic field. The energy and angle spectra of the positrons were obtained for energies up to 150 MeV and angles up to 30 degrees. The measured positron distribution in momentum space (longitudinal versus transverse) is also presented, giving a full momentum space description of the source. Results on outgoing photons are also presented. A significant enhancement of both photon and positron production is clearly observed. At 10 GeV incident energy, the positron enhancement factor is 4 for the 4 mm crystal, about 2 for the 8 mm crystal. Besides, the simulation code for the crystal processes is validated by a quite good agreement between the simulated and experimental spectra, both for positrons and photons.
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Submitted 2 June, 2005;
originally announced June 2005.
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Bunching and antibunching from single NV color centers in diamond
Authors:
A. Beveratos,
R. Brouri,
J. -P. Poizat,
P. Grangier
Abstract:
We investigate correlations between fluorescence photons emitted by single N-V centers in diamond with respect to the optical excitation power. The autocorrelation function shows clear photon antibunching at short times, proving the uniqueness of the emitting center. We also report on a photon bunching effect, which involves a trapping level. An analysis using rate-equations for the populations…
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We investigate correlations between fluorescence photons emitted by single N-V centers in diamond with respect to the optical excitation power. The autocorrelation function shows clear photon antibunching at short times, proving the uniqueness of the emitting center. We also report on a photon bunching effect, which involves a trapping level. An analysis using rate-equations for the populations of the N-V center levels shows the intensity dependence of the rate equation coefficients.
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Submitted 11 October, 2000;
originally announced October 2000.
