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Parametric FEM simulation of composite barrier FTJs under external bias at room temperature
Authors:
C. Tibeica,
T. Sandu,
O. Nedelcu,
R. Plugaru,
N. Plugaru
Abstract:
A study on a parametrized model of a composite barrier FTJ (three-interface system, with a non-polar dielectric layer) under an external bias voltage and at room temperature, using FEM-based simulations, was performed. The approach involves the Thomas-Fermi model assuming incomplete screening of polarization charges for building the energy barrier profile, and numerically simulates the electron tr…
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A study on a parametrized model of a composite barrier FTJ (three-interface system, with a non-polar dielectric layer) under an external bias voltage and at room temperature, using FEM-based simulations, was performed. The approach involves the Thomas-Fermi model assuming incomplete screening of polarization charges for building the energy barrier profile, and numerically simulates the electron transport through the barrier by bias-voltage-dependent tunneling, using Tsu-Esaki formulation. That naturally include the temperature dependent contributions to the total current density. The TER coefficient and current densities are computed considering variation of a large set of parameters that describe the composite barrier FTJ system in realistic physical range of values with respect to a reference (prototypical) system. In this study, the parametric simulations were performed starting from selected data reported on the SRO/STO/BTO/SRO heterostructure. The most important results of our work can be stated as follows: i) The FEM simulations prove to be reliable approach when we are interested in the prediction of FTJ characteristics at temperatures close to 300 K, and ii) We show that several configurations with large TER values may be predicted, but at the expense of very low current densities in the ON state. We suggest that the results may be useful for assessing the FTJ performances at ambient temperature, as well as to design preoptimized FTJs by using different combinations of materials to comply with a set of properties of a specific model.
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Submitted 19 July, 2022;
originally announced July 2022.
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Structure and electrical behavior of silicon nanowires prepared by MACE process
Authors:
R. Plugaru,
E. Fakhri,
C. Romanitan,
I. Mihalache,
G. Craciun,
N. Plugaru,
H. Ö. Árnason,
M. T. Sultan,
G. A. Nemnes,
S. Ingvarsson,
H. G. Svavarsson,
A. Manolescu
Abstract:
We report on the structure and electrical characteristics of silicon nanowire arrays prepared by metal assisted chemical etching (MACE) method, investigated by cross-sectional scanning electron microscopy (SEM) and high resolution X-ray diffraction (HR-XRD) methods. SEM micrographs show arrays of merged parallel nanowires, with lengths of 700 nm and 1000 nm, resulted after 1.5 min and 5 min etchin…
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We report on the structure and electrical characteristics of silicon nanowire arrays prepared by metal assisted chemical etching (MACE) method, investigated by cross-sectional scanning electron microscopy (SEM) and high resolution X-ray diffraction (HR-XRD) methods. SEM micrographs show arrays of merged parallel nanowires, with lengths of 700 nm and 1000 nm, resulted after 1.5 min and 5 min etching time, respectively. X-ray reciprocal space maps (RSMs) around Si (004) reciprocal lattice point indicate the presence of 0D structural defects rather than of extended defects. The photoluminescence spectra exhibit emission bands at 1.70 eV and 1.61 eV, with intensity significantly higher in the case of longer wires and associated with the more defected surface. The transient photoluminescence spectroscopy reveals average lifetime of 60 $μ$s and 111 $μ$s for the two SiNW arrays, which correlate with a larger density of defects states in the latest case. The I-V characteristics of the nanowires, show a memristive behavior with the applied voltage sweep rate in the range 5V/s - 0.32V/s. We attribute this behavior to trap states which control the carrier concentration, and model this effect using an equivalent circuit. Photogeneration processes under excitation wavelengths in visible domain, 405 nm - 650 nm, and under light intensity in the range 20 - 100 mW/cm$^2$ provided a further insight into the trap states.
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Submitted 10 June, 2022;
originally announced June 2022.
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Piezoresistance characterization of silicon nanowires in uniaxial and isostatic pressure variation
Authors:
Elham Fakhri,
Rodica Plugaru,
Muhammad Taha Sultan,
Thorsteinn Hanning Kristinsson,
Hákon Örn Árnason,
Neculai Plugaru,
Andrei Manolescu,
Snorri Ingvarsson,
Halldor Gudfinnur Svavarsson
Abstract:
Silicon nanowires (SiNWs) are known to exhibit large piezoresistance (PZR) effect, making it suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers using a silver catalysed top-down etching process. The piezor…
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Silicon nanowires (SiNWs) are known to exhibit large piezoresistance (PZR) effect, making it suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers using a silver catalysed top-down etching process. The piezoresistance response of these SiNW arrays was analysed by measuring their I-V characteristics under applied uniaxial as well as isostatic pressure. The interconnected SiNWs exhibit increased mechanical stability in comparison with separated or periodic nanowires. The repeatability of the fabrication process and statistical distribution of measurements were also tested on several samples from different batches. A sensing resolution down to roughly \SI{1}{\milli\bar} pressure was observed with uniaxial force application, and more than two orders of magnitude resistance variation was determined for isostatic pressure below atmospheric pressure.
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Submitted 23 June, 2022; v1 submitted 10 June, 2022;
originally announced June 2022.
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Insights into electron transport in a ferroelectric tunnel junction
Authors:
Titus Sandu,
Catalin Tibeica,
Rodica Plugaru,
Oana Nedelcu,
Neculai Plugaru
Abstract:
The success of a ferroelectric tunnel junction (FTJ) depends on the asymmetry of electron tunneling as given by the tunneling electroresistance (TER) effect. This characteristic is mainly assessed considering three transport mechanisms: direct tunneling, thermionic emission, and Fowler-Nordheim tunneling. Here, by analyzing the effect of temperature on TER, we show that taking into account only th…
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The success of a ferroelectric tunnel junction (FTJ) depends on the asymmetry of electron tunneling as given by the tunneling electroresistance (TER) effect. This characteristic is mainly assessed considering three transport mechanisms: direct tunneling, thermionic emission, and Fowler-Nordheim tunneling. Here, by analyzing the effect of temperature on TER, we show that taking into account only these mechanisms may not be enough in order to fully characterize the performance of FTJ devices. We approach the electron tunneling in FTJ with the non-equilibrium Green function (NEGF) method, which is able to overcome the limitations affecting the three mechanisms mentioned above. We bring evidence that the performance of FTJs is also affected by temperature, in a non-trivial way, via resonance (Gamow-Siegert) states, which are present in the electron transmission probability and are usually situated above the barrier. Although the NEGF technique does not provide direct access to the wavefunctions, we show that, for single-band transport, one can find the wavefunction at any given energy and in particular at resonant energies in the system.
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Submitted 25 February, 2022;
originally announced February 2022.
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Polarization branches and optimization calculation strategy applied to ABO3 ferroelectrics
Authors:
Lucian D. Filip,
Neculai Plugaru
Abstract:
Berry phase polarization calculations have been investigated for several ferroelectric materials from the point of view of practical calculations. It was shown that interpretation of the results is particular to each case due to the multivalued aspect of polarization in the modern theory. Almost all of the studied examples show ambiguous polarization results which can be difficult to solve especia…
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Berry phase polarization calculations have been investigated for several ferroelectric materials from the point of view of practical calculations. It was shown that interpretation of the results is particular to each case due to the multivalued aspect of polarization in the modern theory. Almost all of the studied examples show ambiguous polarization results which can be difficult to solve especially for super-cells containing large number of atoms. For this reason, a procedure has been proposed to minimize the number of calculations required to produce an unambiguous polarization result from Berry phase polarization investigations.
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Submitted 25 April, 2017;
originally announced April 2017.
