Gain and Threshold Improvements of 1300 nm Lasers based on InGaAs/InAlGaAs Superlattice Active Regions
Authors:
Andrey Babichev,
Evgeniy Pirogov,
Maksim Sobolev,
Sergey Blokhin,
Yuri Shernyakov,
Mikhail Maximov,
Andrey Lutetskiy,
Nikita Pikhtin,
Leonid Karachinsky,
Innokenty Novikov,
Anton Egorov,
Si-Cong Tian,
Dieter Bimberg
Abstract:
A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer compositions were grown. Using a superlattice allows to downshift the energy position of the miniband, as compared to thin InGaAs quantum wells, having the same compo…
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A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer compositions were grown. Using a superlattice allows to downshift the energy position of the miniband, as compared to thin InGaAs quantum wells, having the same composition, being beneficial for high-temperature operation. Very low internal loss (~6$cm^{-1}$), low transparency current density of ~500$ A/cm^2$, together with 46$ cm^{-1}$ modal gain and 53 % internal efficiency were observed for broad-area lasers with an active region based on a highly strained $In_{0.74}Ga_{0.26}As/In_{0.53}Al_{0.25}Ga_{0.22}As$ superlattice. Characteristic temperatures $T_0$ and $T_1$ were improved up to 76 K and 100 K, respectively. These data suggest that such superlattices have also the potential to much improve VCSEL properties at this wavelength.
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Submitted 5 August, 2024;
originally announced August 2024.
Observation of long turn-on delay in pulsed quantum cascade lasers
Authors:
E. D. Cherotchenko,
V. V. Dudelev,
D. A. Mikhailov,
S. N. Losev,
A. V. Babichev,
A. G. Gladyshev,
I. I. Novikov,
A. V. Lutetskiy,
D. A. Veselov,
S. O. Slipchenko,
N. A. Pikhtin,
L. Ya. Karachinsky,
D. V. Denisov,
V. I. Kuchinskii,
E. A. Kognovitskaya,
A. Yu. Egorov,
R. Teissier,
A. N. Baranov,
G. S. Sokolovskii
Abstract:
We present an experimental study of the turn-on delay in pulsed mid-infrared quantum cascade lasers. We report the unexpectedly long delay time depending on the pumping current, which does not agree with conventional theoretical predictions for step-like excitation. Similar behavior has been observed in InP- and InAs-based QCLs emitting near 8$μ$m. Numerical simulations performed using a model bas…
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We present an experimental study of the turn-on delay in pulsed mid-infrared quantum cascade lasers. We report the unexpectedly long delay time depending on the pumping current, which does not agree with conventional theoretical predictions for step-like excitation. Similar behavior has been observed in InP- and InAs-based QCLs emitting near 8$μ$m. Numerical simulations performed using a model based on rate equations for excitation by current pulses with non-zero rise time provide fair agreement with our observations.
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Submitted 12 July, 2021; v1 submitted 25 June, 2021;
originally announced June 2021.
