Showing 1–2 of 2 results for author: Picinin, A
-
Tuning hole mobility in InP nanowires
Authors:
M. Rebello Sousa Dias,
A. Picinin,
V. Lopez-Richard,
S. E. Ulloa,
L. K. Castelano,
J. P. Rino,
G. E. Marques
Abstract:
Transport properties of holes in InP nanowires were calculated considering electron-phonon interaction via deformation potentials, the effect of temperature and strain fields. Using molecular dynamics, we simulate nanowire structures, LO-phonon energy renormalization and lifetime. The valence band ground state changes between light- and heavy-hole character, as the strain fields and the nanowire s…
▽ More
Transport properties of holes in InP nanowires were calculated considering electron-phonon interaction via deformation potentials, the effect of temperature and strain fields. Using molecular dynamics, we simulate nanowire structures, LO-phonon energy renormalization and lifetime. The valence band ground state changes between light- and heavy-hole character, as the strain fields and the nanowire size are changed. Drastic changes in the mobility arise with the onset of resonance between the LO-phonons and the separation between valence subbands.
△ Less
Submitted 6 June, 2012;
originally announced June 2012.
-
90-degree domain wall relaxation and frequency dependence of the coercive field in the ferroelectric switching process
Authors:
M. H. Lente,
A. Picinin,
J. P. Rino,
J. A. Eiras
Abstract:
The mechanisms involved in the polarization switching process in soft and hard Pb(Zr53, Ti47)O3 (PZT) bulk ceramics were investigated through the dependency of the hysteresis loop on the frequency. In order to determine the influence of the defects on the domain switching dynamics the samples were characterized in the virgin state and after a fatigue or a depinning process. The frequency depende…
▽ More
The mechanisms involved in the polarization switching process in soft and hard Pb(Zr53, Ti47)O3 (PZT) bulk ceramics were investigated through the dependency of the hysteresis loop on the frequency. In order to determine the influence of the defects on the domain switching dynamics the samples were characterized in the virgin state and after a fatigue or a depinning process. The frequency dependence of the polarization revealed a strong relaxation of the 90 domain walls at 100 Hz. The results also revealed a strong influence of the kind of defect and their distribution into the ferroelectric matrix on the domain switching dynamics, which reflected in the frequency dependence of the coercive field and the percentage of the backswitching. Initially, it was observed that the frequency dependence of the coercive field for the soft and the hard PZT in the virgin state had just one rate of change per decade in all frequency range investigated, which is the standard behavior found in the literature. However, after the fatigue or the depinning process two rates of changes were noticed. Consequently, an evidence of an upper frequency limit for the coercive field changes was found. The percentage of the backswitching and its behavior for the soft PZT was almost independent of the fatigue state in all frequency range investigated. Nevertheless, for the hard PZT an opposite behavior was verified. The reorientation of the domains was modeled as occurring in a viscous medium where several forces such as viscous and restoring forces act on them.
△ Less
Submitted 7 November, 2003;
originally announced November 2003.