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An Overview of the Decentralized Reconfiguration Language Concerto-D through its Maude Formalization
Authors:
Farid Arfi,
Hélène Coullon,
Frédéric Loulergue,
Jolan Philippe,
Simon Robillard
Abstract:
We propose an overview of the decentralized reconfiguration language Concerto-D through its Maude formalization. Concerto-D extends the already published Concerto language. Concerto-D improves on two different parameters compared with related work: the decentralized coordination of numerous local reconfiguration plans which avoid a single point of failure when considering unstable networks such as…
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We propose an overview of the decentralized reconfiguration language Concerto-D through its Maude formalization. Concerto-D extends the already published Concerto language. Concerto-D improves on two different parameters compared with related work: the decentralized coordination of numerous local reconfiguration plans which avoid a single point of failure when considering unstable networks such as edge computing, or cyber-physical systems (CPS) for instance; and a mechanized formal semantics of the language with Maude which offers guarantees on the executability of the semantics. Throughout the paper, the Concerto-D language and its semantics are exemplified with a reconfiguration extracted from a real case study on a CPS. We rely on the Maude formal specification language, which is based on rewriting logic, and consequently perfectly suited for describing a concurrent model.
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Submitted 11 December, 2024;
originally announced December 2024.
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(C$_5$H$_9$NH$_3$)$_2$CuBr$_4$: a metal-organic two-ladder quantum magnet
Authors:
J. Philippe,
F. Elson,
M. P. N. Casati,
S. Sanz,
M. Metzelaars,
O. Shliakhtun,
O. K. Forslund,
J. Lass,
T. Shiroka,
A. Linden,
D. G. Mazzone,
J. Ollivier,
S. Shin,
M. Medarde,
B. Lake,
M. Mansson,
M. Bartkowiak,
B. Normand,
P. Kögerler,
Y. Sassa,
M. Janoschek,
G. Simutis
Abstract:
Low-dimensional quantum magnets are a versatile materials platform for studying the emergent many-body physics and collective excitations that can arise even in systems with only short-range interactions. Understanding their low-temperature structure and spin Hamiltonian is key to explaining their magnetic properties, including unconventional quantum phases, phase transitions, and excited states.…
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Low-dimensional quantum magnets are a versatile materials platform for studying the emergent many-body physics and collective excitations that can arise even in systems with only short-range interactions. Understanding their low-temperature structure and spin Hamiltonian is key to explaining their magnetic properties, including unconventional quantum phases, phase transitions, and excited states. We study the metal-organic coordination compound (C$_5$H$_9$NH$_3$)$_2$CuBr$_4$ and its deuterated counterpart, which upon its discovery was identified as a candidate two-leg quantum ($S = 1/2$) spin ladder in the strong-leg coupling regime. By growing large single crystals and probing them with both bulk and microscopic techniques, we deduce that two previously unknown structural phase transitions take place between 136 K and 113 K. The low-temperature structure has a monoclinic unit cell giving rise to two inequivalent spin ladders. We further confirm the absence of long-range magnetic order down to 30 mK and discuss the implications of this two-ladder structure for the magnetic properties of (C$_5$H$_9$NH$_3$)$_2$CuBr$_4$.
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Submitted 6 September, 2024; v1 submitted 12 April, 2024;
originally announced April 2024.
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Efficient Microwave Photon to Electron Conversion in a High Impedance Quantum Circuit
Authors:
Ognjen Stanisavljević,
Jean-Côme Philippe,
Julien Gabelli,
Marco Aprili,
Jérôme Estève,
Julien Basset
Abstract:
We demonstrate an efficient and continuous microwave photon to electron converter with large quantum efficiency ($83\%$) and low dark current. These unique properties are enabled by the use of a high kinetic inductance disordered superconductor, granular aluminium, to enhance light-matter interaction and the coupling of microwave photons to electron tunneling processes. As a consequence of strong…
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We demonstrate an efficient and continuous microwave photon to electron converter with large quantum efficiency ($83\%$) and low dark current. These unique properties are enabled by the use of a high kinetic inductance disordered superconductor, granular aluminium, to enhance light-matter interaction and the coupling of microwave photons to electron tunneling processes. As a consequence of strong coupling, we observe both linear and non-linear photon-assisted processes where 2, 3 and 4 photons are converted into a single electron at unprecedentedly low light intensities. Theoretical predictions, which require quantization of the photonic field within a quantum master equation framework, reproduce well the experimental data. This experimental advancement brings the foundation for high-efficiency detection of individual microwave photons using charge-based detection techniques.
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Submitted 6 November, 2024; v1 submitted 21 December, 2023;
originally announced December 2023.
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SamurAI: A Versatile IoT Node With Event-Driven Wake-Up and Embedded ML Acceleration
Authors:
Ivan Miro-Panades,
Benoit Tain,
Jean-Frederic Christmann,
David Coriat,
Romain Lemaire,
Clement Jany,
Baudouin Martineau,
Fabrice Chaix,
Guillaume Waltener,
Emmanuel Pluchart,
Jean-Philippe Noel,
Adam Makosiej,
Maxime Montoya,
Simone Bacles-Min,
David Briand,
Jean-Marc Philippe,
Yvain Thonnart,
Alexandre Valentian,
Frederic Heitzmann,
Fabien Clermidy
Abstract:
Increased capabilities such as recognition and self-adaptability are now required from IoT applications. While IoT node power consumption is a major concern for these applications, cloud-based processing is becoming unsustainable due to continuous sensor or image data transmission over the wireless network. Thus optimized ML capabilities and data transfers should be integrated in the IoT node. Mor…
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Increased capabilities such as recognition and self-adaptability are now required from IoT applications. While IoT node power consumption is a major concern for these applications, cloud-based processing is becoming unsustainable due to continuous sensor or image data transmission over the wireless network. Thus optimized ML capabilities and data transfers should be integrated in the IoT node. Moreover, IoT applications are torn between sporadic data-logging and energy-hungry data processing (e.g. image classification). Thus, the versatility of the node is key in addressing this wide diversity of energy and processing needs. This paper presents SamurAI, a versatile IoT node bridging this gap in processing and in energy by leveraging two on-chip sub-systems: a low power, clock-less, event-driven Always-Responsive (AR) part and an energy-efficient On-Demand (OD) part. AR contains a 1.7MOPS event-driven, asynchronous Wake-up Controller (WuC) with a 207ns wake-up time optimized for sporadic computing, while OD combines a deep-sleep RISC-V CPU and 1.3TOPS/W Machine Learning (ML) for more complex tasks up to 36GOPS. This architecture partitioning achieves best in class versatility metrics such as peak performance to idle power ratio. On an applicative classification scenario, it demonstrates system power gains, up to 3.5x compared to cloud-based processing, and thus extended battery lifetime.
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Submitted 11 April, 2023;
originally announced April 2023.
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In-situ uniaxial pressure cell for X-ray and neutron scattering experiments
Authors:
G. Simutis,
A. Bollhalder,
M. Zolliker,
J. Küspert,
Q. Wang,
D. Das,
F. Van Leeuwen,
O. Ivashko,
O. Gutowski,
J. Philippe,
T. Kracht,
P. Glaevecke,
T. Adachi,
M. Von Zimmermann,
S. Van Petegem,
H. Luetkens,
Z. Guguchia,
J. Chang,
Y. Sassa,
M. Bartkowiak,
M. Janoschek
Abstract:
We present an in-situ uniaxial pressure device optimized for small angle X-ray and neutron scattering experiments at low-temperatures and high magnetic fields. A stepper motor generates force, which is transmitted to the sample via a rod with integrated transducer that continuously monitors the force. The device has been designed to generate forces up to 200 N in both compressive and tensile confi…
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We present an in-situ uniaxial pressure device optimized for small angle X-ray and neutron scattering experiments at low-temperatures and high magnetic fields. A stepper motor generates force, which is transmitted to the sample via a rod with integrated transducer that continuously monitors the force. The device has been designed to generate forces up to 200 N in both compressive and tensile configurations and a feedback control allows operating the system in a continuous-pressure mode as the temperature is changed. The uniaxial pressure device can be used for various instruments and multiple cryostats through simple and exchangeable adapters. It is compatible with multiple sample holders, which can be easily changed depending on the sample properties and the desired experiment and allow rapid sample changes.
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Submitted 26 July, 2022;
originally announced July 2022.
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Fully-gapped superconducting state in interstitial-carbon-doped Zr5Pt3
Authors:
T. Shang,
J. Philippe,
X. Y. Zhu,
H. Zhang,
B. C. Yu,
Z. X. Zhen,
H. -R. Ott,
J. Kitagawa,
T. Shiroka
Abstract:
We report a comprehensive study of the Zr$_5$Pt$_3$C$_x$ superconductors, with interstitial carbon comprised between 0 and 0.3. At a macroscopic level, their superconductivity, with $T_c$ ranging from 4.5 to 6.3 K, was investigated via electrical-resistivity-, magnetic-susceptibility-, and specific-heat measurements. The upper critical fields $μ_0H_\mathrm{c2}$ $\sim$ 7 T were determined mostly fr…
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We report a comprehensive study of the Zr$_5$Pt$_3$C$_x$ superconductors, with interstitial carbon comprised between 0 and 0.3. At a macroscopic level, their superconductivity, with $T_c$ ranging from 4.5 to 6.3 K, was investigated via electrical-resistivity-, magnetic-susceptibility-, and specific-heat measurements. The upper critical fields $μ_0H_\mathrm{c2}$ $\sim$ 7 T were determined mostly from measurements of the electrical resistivity in applied magnetic fields. The microscopic electronic properties were investigated by means of muon-spin rotation and relaxation ($μ$SR) and nuclear magnetic resonance (NMR) techniques. In the normal state, NMR relaxation data indicate an almost ideal metallic behavior, confirmed by band-structure calculations, which suggest a relatively high electronic density of states at the Fermi level, dominated by the Zr 4$d$ orbitals. The low-temperature superfluid density, obtained via transverse-field $μ$SR, suggests a fully-gapped superconducting state in Zr$_5$Pt$_3$ and Zr$_5$Pt$_3$C$_{0.3}$, with a zero-temperature gap $Δ_0$ = 1.20 and 0.60 meV and a magnetic penetration depth $λ_0$ = 333 and 493 nm, respectively. The exponential dependence of the NMR relaxation rates below $T_c$ further supports a nodeless superconductivity. The absence of spontaneous magnetic fields below the onset of superconductivity, as determined from zero-field $μ$SR measurements, confirms a preserved time-reversal symmetry in the superconducting state of Zr$_5$Pt$_3$C$_x$. In contrast to a previous study, our $μ$SR and NMR results suggest a conventional superconductivity in the Zr$_5$Pt$_3$C$_x$ family, independent of the C content.
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Submitted 30 June, 2022;
originally announced July 2022.
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Nematic fluctuations mediated superconductivity revealed by anisotropic strain in Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$
Authors:
J. -C. Philippe,
A. Lespinas,
J. Faria,
A. Forget,
D. Colson,
S. Houver,
M. Cazayous,
A. Sacuto,
I. Paul,
Y. Gallais
Abstract:
Anisotropic strain is an external field capable of selectively addressing the role of nematic fluctuations in promoting superconductivity. We demonstrate this using polarization-resolved elasto-Raman scattering to probe the evolution of nematic fluctuations under strain in the normal and superconducting states of the paradigmatic iron-based superconductor Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$. In the non…
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Anisotropic strain is an external field capable of selectively addressing the role of nematic fluctuations in promoting superconductivity. We demonstrate this using polarization-resolved elasto-Raman scattering to probe the evolution of nematic fluctuations under strain in the normal and superconducting states of the paradigmatic iron-based superconductor Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$. In the non-superconducting parent compound BaFe$_2$As$_2$ we observe a strain-induced suppression of the nematic susceptibility which follows the expected behavior of an Ising order parameter under a symmetry breaking field. For the superconducting compound, the suppression of the nematic susceptibility correlates with the decrease of the superconducting critical temperature $T_c$. Our results indicate a significant contribution of nematic fluctuations to electron pairing and validate theoretical scenarios of enhanced $T_c$ near a nematic quantum critical point.
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Submitted 28 October, 2022; v1 submitted 26 April, 2022;
originally announced April 2022.
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Elasto-Raman scattering: arsenic optical phonon as a probe of nematicity in BaFe$_2$As$_2$
Authors:
J. -C. Philippe,
J. Faria,
A. Forget,
D. Colson,
S. Houver,
M. Cazayous,
A. Sacuto,
Y. Gallais
Abstract:
We report a Raman scattering study of nematic degrees of freedom in the iron-based superconductor parent compound BaFe$_2$As$_2$ under tunable uniaxial strain. We demonstrate that the polarization resolved arsenic (As) phonon intensity can be used to monitor the nematic order parameter as a function of both temperature and strain. At low temperature in the nematic ordered phase we use it to track…
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We report a Raman scattering study of nematic degrees of freedom in the iron-based superconductor parent compound BaFe$_2$As$_2$ under tunable uniaxial strain. We demonstrate that the polarization resolved arsenic (As) phonon intensity can be used to monitor the nematic order parameter as a function of both temperature and strain. At low temperature in the nematic ordered phase we use it to track the continuous and reversible orientation of nematic domains under variable strain. At higher temperature, the evolution of the As phonon intensity under strain reflects an enhanced nematic susceptibility close to the nematic transition $T_S$. Its temperature dependence under strong strain follows qualitatively the expected behavior of an Ising order parameter under a symmetry breaking field. Our elasto-Raman study illustrates the interest of combining selective anisotropic strain with a symmetry resolved probe like Raman scattering. Elasto-Raman scattering can be applied to a wide variety of quantum materials where uniaxial strain tunes electronic orders.
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Submitted 12 October, 2021;
originally announced October 2021.
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Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing
Authors:
Arun Bhaskar,
Justine Philippe,
Etienne Okada,
Flavie Braud,
Jean-François Robillard,
Cédric Durand,
Frédéric Gianesello,
Daniel Gloria,
Christophe Gaquière,
Emmanuel Dubois
Abstract:
With the evolution of radio frequency (RF)/microwave technology, there is a demand for circuits which are able to meet highly challenging RF frontend specifications. Silicon-on-insulator (SOI) technology is one of the leading platforms for upcoming wireless generation. The degradation of performance due to substrate coupling is a key problem to address for telecommunication circuits, especially fo…
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With the evolution of radio frequency (RF)/microwave technology, there is a demand for circuits which are able to meet highly challenging RF frontend specifications. Silicon-on-insulator (SOI) technology is one of the leading platforms for upcoming wireless generation. The degradation of performance due to substrate coupling is a key problem to address for telecommunication circuits, especially for the high throw count switches in RF frontends. In this context, a novel technique for local substrate removal is developed to fabricate membranes of mm-sized RF switch which allows for total etching of silicon handler. RF characterization of membranes reveal a superior linearity performance with lowering of 2nd harmonic by 17.7 dB and improvement in insertion losses by 0.38 dB in comparison with High-Resistivity SOI substrates. This improvement leads to a significant increase in frontend efficiency. These results demonstrate a new route for optimization of circuit performance using post-fabrication substrate processing techniques.
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Submitted 24 August, 2021;
originally announced September 2021.
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Orbital dichotomy of Fermi liquid properties in Sr$_2$RuO$_4$ revealed by Raman spectroscopy
Authors:
J. -C. Philippe,
B. Baptiste,
C. Sow,
Y. Maeno,
A. Forget,
D. Colson,
M. Cazayous,
A. Sacuto,
Y. Gallais
Abstract:
We report a polarization-resolved Raman spectroscopy study of the orbital dependence of the quasiparticles properties in the prototypical multi-band Fermi liquid Sr\textsubscript{2}RuO\textsubscript{4}. We show that the quasiparticle scattering rate displays $ω^{2}$ dependence as expected for a Fermi liquid. Besides, we observe a clear polarization-dependence in the energy and temperature dependen…
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We report a polarization-resolved Raman spectroscopy study of the orbital dependence of the quasiparticles properties in the prototypical multi-band Fermi liquid Sr\textsubscript{2}RuO\textsubscript{4}. We show that the quasiparticle scattering rate displays $ω^{2}$ dependence as expected for a Fermi liquid. Besides, we observe a clear polarization-dependence in the energy and temperature dependence of the quasiparticle scattering rate and mass, with the $d_{xz/yz}$ orbital derived quasiparticles showing significantly more robust Fermi liquid properties than the $d_{xy}$ orbital derived ones. The observed orbital dichotomy of the quasiparticles is consistent with the picture of Sr\textsubscript{2}RuO\textsubscript{4} as a Hund's metal. Our study establishes Raman scattering as a powerful probe of Fermi liquid properties in correlated metals.
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Submitted 5 July, 2021; v1 submitted 30 March, 2021;
originally announced March 2021.
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Large-area femtosecond laser milling of silicon employing trench analysis
Authors:
Arun Bhaskar,
Justine Philippe,
Flavie Braud,
Etienne Okada,
Vanessa Avramovic,
Jean-François Robillard,
Cédric Durand,
Daniel Gloria,
Christophe Gaquière,
Emmanuel Dubois
Abstract:
A femtosecond laser is a powerful tool for micromachining of silicon. In this work, large-area laser ablation of crystalline silicon is comprehensively studied using a laser source of pulse width 300 fs at two wavelengths of 343 nm and 1030 nm. We develop a unique approach to gain insight into the laser milling process by means of detailed analysis of trenches. Laser scribed trenches and milled ar…
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A femtosecond laser is a powerful tool for micromachining of silicon. In this work, large-area laser ablation of crystalline silicon is comprehensively studied using a laser source of pulse width 300 fs at two wavelengths of 343 nm and 1030 nm. We develop a unique approach to gain insight into the laser milling process by means of detailed analysis of trenches. Laser scribed trenches and milled areas are characterized using optical profilometry to extract dimensional and roughness parameters with accuracy and repeatability. In a first step, multiple measures of the trench including the average depth, the volume of recast material, the average longitudinal profile roughness, the inner trench width and the volume removal rate are studied. This allows for delineation of ablation regimes and associated characteristics allowing to determine the impact of fluence and repetition rate on laser milling. In a second step, additional factors of debris formation and material redeposition that come into play during laser milling are further elucidated. These results are utilized for processing large-area (up to few mm2) with milling depths up to 200 μm to enable the fabrication of cavities with low surface roughness at high removal rates of up to 6.9 μm3 μs-1. Finally, laser processing in combination with XeF2 etching is applied on SOI-CMOS technology in the fabrication of radio-frequency (RF) functions standing on suspended membranes. Performance is considerably improved on different functions like RF switch (23 dB improvement in 2nd harmonic), inductors (near doubling of Q-factor) and LNA (noise figure improvement of 0.1 dB) demonstrating the applicability of milling to radio-frequency applications.
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Submitted 30 August, 2020;
originally announced August 2020.
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Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA
Authors:
Arun Bhaskar,
Justine Philippe,
Vanessa Avramovic,
Flavie Braud,
Jean-François Robillard,
Cédric Durand,
Daniel Gloria,
Christophe Gaquiere,
Emmanuel Dubois
Abstract:
High Q-factor inductors are critical in designing high performance RF/microwave circuits on SOI technology. Substrate losses is a key limiting factor when designing inductors with high Q-factors. In this context, we report a substrate engineering method that enables improvement of quality factors of already fabricated inductors on SOI. A novel femtosecond laser milling process is utilized for the…
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High Q-factor inductors are critical in designing high performance RF/microwave circuits on SOI technology. Substrate losses is a key limiting factor when designing inductors with high Q-factors. In this context, we report a substrate engineering method that enables improvement of quality factors of already fabricated inductors on SOI. A novel femtosecond laser milling process is utilized for the fabrication of locally suspended membranes of inductors with handler silicon completely etched. Such flexible membranes suspended freely on the BOX show up to 92 % improvement in Q factor for single turn inductor. The improvement in Q-factor is reported on large sized inductors due to reduced parallel capacitance which allows enhanced operation of inductors at high frequencies. A compact model extraction methodology has been developed to model inductor membranes. These membranes have been utilized for the improvement of noise performance of LNA working in the 4.9,5.9 GHz range. A 0.1 dB improvement in noise figure has been reported by taking an existing design and suspending the input side inductors of the LNA circuit. The substrate engineering method reported in this work is not only applicable to inductors but also to active circuits, making it a powerful tool for enhancement of RF devices.
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Submitted 20 August, 2020;
originally announced August 2020.
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Nodeless superconductivity and preserved time-reversal symmetry in the noncentrosymmetric Mo3P superconductor
Authors:
T. Shang,
J. Philippe,
J. A. T. Verezhak,
Z. Guguchia,
J. Z. Zhao,
L. -J. Chang,
M. K. Lee,
D. J. Gawryluk,
E. Pomjakushina,
M. Shi,
M. Medarde,
H. -R. Ott,
T. Shiroka
Abstract:
We report a comprehensive study of the noncentrosymmetric superconductor Mo$_3$P. Its bulk superconductivity, with $T_c = 5.5$ K, was characterized via electrical resistivity, magnetization, and heat-capacity measurements, while its microscopic electronic properties were investigated by means of muon-spin rotation/relaxation ($μ$SR) and nuclear magnetic resonance (NMR) techniques. In the normal st…
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We report a comprehensive study of the noncentrosymmetric superconductor Mo$_3$P. Its bulk superconductivity, with $T_c = 5.5$ K, was characterized via electrical resistivity, magnetization, and heat-capacity measurements, while its microscopic electronic properties were investigated by means of muon-spin rotation/relaxation ($μ$SR) and nuclear magnetic resonance (NMR) techniques. In the normal state, NMR relaxation data indicate an almost ideal metallic behavior, confirmed by band-structure calculations, which suggest a relatively high electron density of states, dominated by the Mo $4d$-orbitals. The low-temperature superfluid density, determined via transverse-field $μ$SR and electronic specific heat, suggest a fully-gapped superconducting state in Mo$_3$P, with $Δ_0= 0.83$ meV, the same as the BCS gap value in the weak-coupling case, and a zero-temperature magnetic penetration depth $λ_0 = 126$ nm. The absence of spontaneous magnetic fields below the onset of superconductivity, as determined from zero-field $μ$SR measurements, indicates a preserved time-reversal symmetry in the superconducting state of Mo$_3$P and, hence, spin-singlet pairing.
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Submitted 12 May, 2019;
originally announced May 2019.
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Design of multimedia processor based on metric computation
Authors:
Nader Ben Amor,
Yannick Le Moullec,
Jean-Philippe Diguet,
Jean Luc Philippe,
Mohamed Abid
Abstract:
Media-processing applications, such as signal processing, 2D and 3D graphics rendering, and image compression, are the dominant workloads in many embedded systems today. The real-time constraints of those media applications have taxing demands on today's processor performances with low cost, low power and reduced design delay. To satisfy those challenges, a fast and efficient strategy consists i…
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Media-processing applications, such as signal processing, 2D and 3D graphics rendering, and image compression, are the dominant workloads in many embedded systems today. The real-time constraints of those media applications have taxing demands on today's processor performances with low cost, low power and reduced design delay. To satisfy those challenges, a fast and efficient strategy consists in upgrading a low cost general purpose processor core. This approach is based on the personalization of a general RISC processor core according the target multimedia application requirements. Thus, if the extra cost is justified, the general purpose processor GPP core can be enforced with instruction level coprocessors, coarse grain dedicated hardware, ad hoc memories or new GPP cores. In this way the final design solution is tailored to the application requirements. The proposed approach is based on three main steps: the first one is the analysis of the targeted application using efficient metrics. The second step is the selection of the appropriate architecture template according to the first step results and recommendations. The third step is the architecture generation. This approach is experimented using various image and video algorithms showing its feasibility.
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Submitted 18 August, 2006;
originally announced August 2006.
