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Showing 1–2 of 2 results for author: Petrovykh, D Y

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  1. Atomic Scale Memory at a Silicon Surface

    Authors: R. Bennewitz, J. N. Crain, A. Kirakosian, J. -L. Lin, J. L. McChesney, D. Y. Petrovykh, F. J. Himpsel

    Abstract: The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites along self-assembled tracks with a pitch of 5 atom rows. The writing process involves removal of Si atoms with the tip of a scanning tunneling microscope. The memory can be reformatted by controlled depo… ▽ More

    Submitted 20 June, 2002; v1 submitted 11 April, 2002; originally announced April 2002.

    Comments: 13 pages, 5 figures, accepted by Nanotechnology

  2. Enhanced Spin Polarization of Conduction Electrons in Ni, explained by comparison with Cu

    Authors: K. N. Altmann, D. Y. Petrovykh, G. J. Mankey, Nic Shannon, N. Gilman, M. Hochstrasser, R. F. Willis, F. J. Himpsel

    Abstract: The spin-split Fermi level crossings of the conduction band in Ni are mapped out by high-resolution photoemission and compared to the equivalent crossing in Cu. The area of the quasiparticle peak decreases rapidly below Ef in Ni, but not in Cu. Majority spins have larger spectral weight at Ef than minority spins, thereby enhancing the spin-polarization beyond that expected from the density of st… ▽ More

    Submitted 18 May, 2000; originally announced May 2000.

    Comments: 5 pages revtex, 4 eps figures

    Journal ref: Phys. Rev. B 61, 15661 Phys. Rev. B 61, 15661 Phys. Rev. B 61, 15661 (2000)