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Ultra-fast Digital DPC Yielding High Spatio-Temporal Resolution for Low-Dose Phase Characterisation
Authors:
Julie Marie Bekkevold,
Jonathan J. P. Peters,
Ryo Ishikawa,
Naoya Shibata,
Lewys Jones
Abstract:
In the scanning transmission electron microscope, both phase imaging of beam-sensitive materials and characterisation of a material's functional properties using in-situ experiments are becoming more widely available. As the practicable scan speed of 4D-STEM detectors improves, so too does the temporal resolution achievable for both differential phase contrast (DPC) and ptychography. However, the…
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In the scanning transmission electron microscope, both phase imaging of beam-sensitive materials and characterisation of a material's functional properties using in-situ experiments are becoming more widely available. As the practicable scan speed of 4D-STEM detectors improves, so too does the temporal resolution achievable for both differential phase contrast (DPC) and ptychography. However, the read-out burden of pixelated detectors, and the size of the gigabyte to terabyte sized data sets, remain a challenge for both temporal resolution and their practical adoption. In this work, we show that a high-fidelity DPC phase reconstruction can be achieved from both annular segmented detectors or pixelated arrays with relatively few elements using signal digitisation. Unlike conventional analog data, even at the fastest scan speeds, phase reconstructions from digitised DPC-segment images yield reliable data. Finally, dose fractionation by fast scanning and multi-framing allows for post-process binning of frame streams to balance signal-to-noise ratio and temporal resolution for low-dose phase imaging for in-situ experiments.
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Submitted 16 August, 2024; v1 submitted 10 May, 2024;
originally announced May 2024.
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How Fast is Your Detector? The Effect of Temporal Response on Image Quality
Authors:
Tiarnan Mullarkey,
Matthew Geever,
Jonathan J. P. Peters,
Ian Griffiths,
Peter D. Nellist,
Lewys Jones
Abstract:
With increasing interest in high-speed imaging should come an increased interest in the response times of our scanning transmission electron microscope (STEM) detectors. Previous works have previously highlighted and contrasted performance of various detectors for quantitative compositional or structural studies, but here we shift the focus to detector temporal response, and the effect this has on…
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With increasing interest in high-speed imaging should come an increased interest in the response times of our scanning transmission electron microscope (STEM) detectors. Previous works have previously highlighted and contrasted performance of various detectors for quantitative compositional or structural studies, but here we shift the focus to detector temporal response, and the effect this has on captured images. The rise and decay times of eight detectors' single electron response are reported, as well as measurements of their flatness, roundness, smoothness, and ellipticity. We develop and apply a methodology for incorporating the temporal detector response into simulations, showing that a loss of resolution is apparent in both the images and their Fourier transforms. We conclude that the solid-state detector outperforms the photomultiplier-tube (PMT) based detectors in all areas bar a slightly less elliptical central hole and is likely the best detector to use for the majority of applications. However, using tools introduced here we encourage users to effectively evaluate what detector is most suitable for their experimental needs.
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Submitted 7 December, 2022;
originally announced December 2022.
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Interlacing in atomic resolution scanning transmission electron microscopy
Authors:
Jonathan J. P Peters,
Tiarnan Mullarkey,
James A. Gott,
Elizabeth Nelson,
Lewys Jones
Abstract:
Fast frame-rates are desirable in scanning transmission electron microscopy for a number of reasons: controlling electron beam dose, capturing in-situ events or reducing the appearance of scan distortions. Whilst several strategies exist for increasing frame-rates, many impact image quality or require investment in advanced scan hardware. Here we present an interlaced imaging approach to achieve m…
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Fast frame-rates are desirable in scanning transmission electron microscopy for a number of reasons: controlling electron beam dose, capturing in-situ events or reducing the appearance of scan distortions. Whilst several strategies exist for increasing frame-rates, many impact image quality or require investment in advanced scan hardware. Here we present an interlaced imaging approach to achieve minimal loss of image quality with faster frame-rates that can be implemented on many existing scan controllers. We further demonstrate that our interlacing approach provides the best possible strain precision for a given electron dose compared with other contemporary approaches.
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Submitted 13 November, 2022;
originally announced November 2022.
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Cost & Capability Compromises in STEM Instrumentation for Low-Voltage Imaging
Authors:
Frances Quigley,
Patrick McBean,
Peter O'Donovan,
Jonathan J. P. Peters,
Lewys Jones
Abstract:
Low voltage transmission electron microscopy (<=80 kV) has many applications in imaging beam-sensitive samples, such as metallic nanoparticles, which may become damaged at higher voltages. To improve resolution, spherical aberration can be corrected for in a Scanning Transmission Electron Microscope (STEM), however chromatic aberration may then dominate, limiting the ultimate resolution of the mic…
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Low voltage transmission electron microscopy (<=80 kV) has many applications in imaging beam-sensitive samples, such as metallic nanoparticles, which may become damaged at higher voltages. To improve resolution, spherical aberration can be corrected for in a Scanning Transmission Electron Microscope (STEM), however chromatic aberration may then dominate, limiting the ultimate resolution of the microscope. Using image simulations, we examine how a chromatic aberration corrector, different objective lenses, and different beam energy-spreads each affect the image quality of a gold nanoparticle imaged at low voltages in a spherical aberration-corrected STEM. Quantitative analysis of the simulated examples can inform the choice of instrumentation for low-voltage imaging. We here demonstrate a methodology whereby the optimum energy spread to operate a specific STEM can be deduced. This methodology can then be adapted to the specific sample and instrument of the reader, enabling them to make an informed economical choice as to what would be most beneficial for their STEM in the cost-conscious landscape of scientific infrastructure.
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Submitted 23 December, 2021; v1 submitted 27 August, 2021;
originally announced August 2021.
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Using Your Beam Efficiently: Reducing Electron-dose in the STEM via Flyback Compensation
Authors:
Tiarnan Mullarkey,
Jonathan J. P. Peters,
Clive Downing,
Lewys Jones
Abstract:
In the scanning transmission electron microscope, fast-scanning and frame-averaging are two widely used approaches for reducing electron-beam damage and increasing image signal-noise ratio which require no additional specialised hardware. Unfortunately, for scans with short pixel dwell-times (less than 5 $μ$s), line flyback time represents an increasingly wasteful overhead. Although beam exposure…
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In the scanning transmission electron microscope, fast-scanning and frame-averaging are two widely used approaches for reducing electron-beam damage and increasing image signal-noise ratio which require no additional specialised hardware. Unfortunately, for scans with short pixel dwell-times (less than 5 $μ$s), line flyback time represents an increasingly wasteful overhead. Although beam exposure during flyback causes damage while yielding no useful information, scan-coil hysteresis means that eliminating it entirely leads to unacceptably distorted images. In this work, we reduce this flyback to an absolute minimum by calibrating and correcting for this hysteresis in postprocessing. Substantial improvements in dose-efficiency can be realised (up to 20 %), while crystallographic and spatial fidelity is maintained for displacement/strain measurement.
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Submitted 12 January, 2022; v1 submitted 5 July, 2021;
originally announced July 2021.
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Unsupervised learning of ferroic variants from atomically resolved STEM images
Authors:
Mani Valleti,
Sergei V. Kalinin,
Christopher T. Nelson,
Jonathan J. P. Peters,
Wen Dong,
Richard Beanland,
Xiaohang Zhang,
Ichiro Takeuchi,
Maxim Ziatdinov
Abstract:
An approach for the analysis of atomically resolved scanning transmission electron microscopy data with multiple ferroic variants in the presence of imaging non-idealities and chemical variabilities based on a rotationally invariant variational autoencoder (rVAE) is presented. We show that an optimal local descriptor for the analysis is a sub-image centered at specific atomic units, since material…
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An approach for the analysis of atomically resolved scanning transmission electron microscopy data with multiple ferroic variants in the presence of imaging non-idealities and chemical variabilities based on a rotationally invariant variational autoencoder (rVAE) is presented. We show that an optimal local descriptor for the analysis is a sub-image centered at specific atomic units, since materials and microscope distortions preclude the use of an ideal lattice as a reference point. The applicability of unsupervised clustering and dimensionality reduction methods is explored and are shown to produce clusters dominated by chemical and microscope effects, with a large number of classes required to establish the presence of rotational variants. Comparatively, the rVAE allows extraction of the angle corresponding to the orientation of ferroic variants explicitly, enabling straightforward identification of the ferroic variants as regions with constant or smoothly changing latent variables and sharp orientational changes. This approach allows further exploration of the chemical variability by separating the rotational degrees of freedom via rVAE and searching for remaining variability in the system. The code used in the manuscript is available at https://github.com/saimani5/ferroelectric_domains_rVAE.
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Submitted 20 June, 2022; v1 submitted 18 January, 2021;
originally announced January 2021.
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Exit Wavefunction Reconstruction from Single Transmission Electron Micrographs with Deep Learning
Authors:
Jeffrey M. Ede,
Jonathan J. P. Peters,
Jeremy Sloan,
Richard Beanland
Abstract:
Half of wavefunction information is undetected by conventional transmission electron microscopy (CTEM) as only the intensity, and not the phase, of an image is recorded. Following successful applications of deep learning to optical hologram phase recovery, we have developed neural networks to recover phases from CTEM intensities for new datasets containing 98340 exit wavefunctions. Wavefunctions w…
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Half of wavefunction information is undetected by conventional transmission electron microscopy (CTEM) as only the intensity, and not the phase, of an image is recorded. Following successful applications of deep learning to optical hologram phase recovery, we have developed neural networks to recover phases from CTEM intensities for new datasets containing 98340 exit wavefunctions. Wavefunctions were simulated with clTEM multislice propagation for 12789 materials from the Crystallography Open Database. Our networks can recover 224x224 wavefunctions in ~25 ms for a large range of physical hyperparameters and materials, and we demonstrate that performance improves as the distribution of wavefunctions is restricted. Phase recovery with deep learning overcomes the limitations of traditional methods: it is live, not susceptible to distortions, does not require microscope modification or multiple images, and can be applied to any imaging regime. This paper introduces multiple approaches to CTEM phase recovery with deep learning, and is intended to establish starting points to be improved upon by future research. Source code and links to our new datasets and pre-trained models are available at https://github.com/Jeffrey-Ede/one-shot
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Submitted 30 January, 2020; v1 submitted 29 January, 2020;
originally announced January 2020.
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Enhanced superconductivity in few-layer TaS$_2$ due to healing by oxygenation
Authors:
J. Bekaert,
E. Khestanova,
D. G. Hopkinson,
J. Birkbeck,
N. Clark,
M. Zhu,
D. A. Bandurin,
R. Gorbachev,
S. Fairclough,
Y. Zou,
M. Hamer,
D. J. Terry,
J. J. P. Peters,
A. M. Sanchez,
B. Partoens,
S. J. Haigh,
M. V. Milošević,
I. V. Grigorieva
Abstract:
When approaching the atomically thin limit, defects and disorder play an increasingly important role in the properties of two-dimensional materials. Superconductivity is generally thought to be vulnerable to these effects, but here we demonstrate the contrary in the case of oxygenation of ultrathin tantalum disulfide (TaS$_2$). Our first-principles calculations show that incorporation of oxygen in…
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When approaching the atomically thin limit, defects and disorder play an increasingly important role in the properties of two-dimensional materials. Superconductivity is generally thought to be vulnerable to these effects, but here we demonstrate the contrary in the case of oxygenation of ultrathin tantalum disulfide (TaS$_2$). Our first-principles calculations show that incorporation of oxygen into the TaS$_2$ crystal lattice is energetically favourable and effectively heals sulfur vacancies typically present in these crystals, thus restoring the carrier density to the intrinsic value of TaS$_2$. Strikingly, this leads to a strong enhancement of the electron-phonon coupling, by up to 80% in the highly-oxygenated limit. Using transport measurements on fresh and aged (oxygenated) few-layer TaS$_2$, we found a marked increase of the superconducting critical temperature ($T_{\mathrm{c}}$) upon aging, in agreement with our theory, while concurrent electron microscopy and electron-energy loss spectroscopy confirmed the presence of sulfur vacancies in freshly prepared TaS$_2$ and incorporation of oxygen into the crystal lattice with time. Our work thus reveals the mechanism by which certain atomic-scale defects can be beneficial to superconductivity and opens a new route to engineer $T_{\mathrm{c}}$ in ultrathin materials.
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Submitted 16 December, 2019;
originally announced December 2019.
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Lateral heterojunctions within monolayer semiconductors
Authors:
Chunming Huang,
Sanfeng Wu,
Ana M. Sanchez,
Jonathan J. P. Peters,
Richard Beanland,
Jason S. Ross,
Pasqual Rivera,
Wang Yao,
David H. Cobden,
Xiaodong Xu
Abstract:
Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different two-dimensional (2D) semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we d…
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Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different two-dimensional (2D) semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we demonstrate that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2. The junctions, grown by lateral hetero-epitaxy using physical vapor transport, are visible in an optical microscope and show enhanced photoluminescence. Atomically resolved transmission electron microscopy reveals that their structure is an undistorted honeycomb lattice in which substitution of one transition metal by another occurs across the interface. The growth of such lateral junctions will allow new device functionalities, such as in-plane transistors and diodes, to be integrated within a single atomically thin layer.
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Submitted 12 June, 2014;
originally announced June 2014.
