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Atomic collapse in gapped graphene: lattice and valley effects
Authors:
Jing Wang,
Xiaotai Wu,
Wen-Sheng Zhao,
Yuhua Cheng,
Yue Hu,
Francois M. Peeters
Abstract:
We study the atomic collapse phenomenon in $K$ and $K'$ valley of gapped graphene. Bound states induced by Coulomb impurity in the gap turn into atomic collapse resonances as the charge increases beyond the supercritical charge $Z_c$. $Z_c$ increases sublinear with the band gap $Δ$. The atomic collapse resonances result in peaks in the LDOS at the same energies in $K$ and $K'$ valley, but the stro…
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We study the atomic collapse phenomenon in $K$ and $K'$ valley of gapped graphene. Bound states induced by Coulomb impurity in the gap turn into atomic collapse resonances as the charge increases beyond the supercritical charge $Z_c$. $Z_c$ increases sublinear with the band gap $Δ$. The atomic collapse resonances result in peaks in the LDOS at the same energies in $K$ and $K'$ valley, but the strong (weak) LDOS peaks in $K$ valley are weak (strong) LDOS peaks in $K'$ valley reminiscent of pseudospin polarization phenomenon. From a spatial LDOS analysis of the atomic collapse resonance states, we assign specific atomic orbitals to the atomic collapse resonances. Remarkably, the two $p$ atomic orbital atomic collapse states are no longer degenerate and splits into two having lobes in different directions in the graphene plane.
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Submitted 24 January, 2025;
originally announced January 2025.
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Phosphorene Junctions as a Platform for Spin-Selective Quantum Dots in Next-Generation Devices
Authors:
Maryam Mahdavifar,
Farhad Khoeini,
Francois M. Peeters
Abstract:
The impact of vacancies on spin-resolved electronic properties of quantum dots (QDs) in phosphorene-based junctions, are investigated numerically. Regardless of the crystal orientation, a phosphorene nanoribbon (PNR) containing a monovacancy is found to exhibit a topological quasi-flat band that emerges within the band gap. The electronic properties of QDs, including spatial confinement and energy…
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The impact of vacancies on spin-resolved electronic properties of quantum dots (QDs) in phosphorene-based junctions, are investigated numerically. Regardless of the crystal orientation, a phosphorene nanoribbon (PNR) containing a monovacancy is found to exhibit a topological quasi-flat band that emerges within the band gap. The electronic properties of QDs, including spatial confinement and energy level distribution, can be strongly tuned by controlling the topological structure of the QDs and by applying electric fields. Additionally, these QDs exhibit remarkable spin-selective properties under a ferromagnetic exchange field, enabling the manipulation of QD features. This opens up the potential for novel applications such as quantum computing, magnetic sensing, spin-based light emission.
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Submitted 3 November, 2024;
originally announced November 2024.
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Magneto-optical conductivity of monolayer transition metal dichalcogenides in the presence of proximity-induced exchange interaction and external electrical field
Authors:
Y. Li,
Y. M. Xiao,
W. Xu,
L. Ding,
M. V. Milošević,
F. M. Peeters
Abstract:
We theoretically investigate the magneto-optical (MO) properties of monolayer (ML) transition metal dichalcogenides (TMDs) in the presence of external electrical and quantizing magnetic fields and of the proximity-induced exchange interaction. The corresponding Landau Level (LL) structure is studied by solving the Schrödinger equation and the spin polarization in ML-TMDs under the action of the ma…
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We theoretically investigate the magneto-optical (MO) properties of monolayer (ML) transition metal dichalcogenides (TMDs) in the presence of external electrical and quantizing magnetic fields and of the proximity-induced exchange interaction. The corresponding Landau Level (LL) structure is studied by solving the Schrödinger equation and the spin polarization in ML-TMDs under the action of the magnetic field is evaluated.The impact of trigonal warping on LLs and MO absorption is examined. Furthermore, the longitudinal MO conductivity is calculated through the dynamical dielectric function under the standard random-phase approximation (RPA) with the Kubo formula. We take ML-MoS$_2$ as an example to examine the effects of proximity-induced exchange interaction, external electrical and magnetic fields on the MO conductivity induced via intra- and interband electronic transitions among the LLs. For intraband electronic transitions within the conduction or valence bands, we can observe two absorption peaks in terahertz (THz) frequency range. While the interband electronic transitions between conduction and valence LLs show a series of absorption peaks in the visible range. We find that the proximity-induced exchange interaction, the carrier density, the strengths of the external electrical and magnetic fields can effectively modulate the positions of the absorption peaks and the shapes of the MO absorption spectra. The results obtained from this study can benefit to an in-depth understanding of the MO properties of ML-TMDs which can be potentially applied for magneto-optic, spintronic and valleytronic devices working in visible to THz frequency bandwidths.
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Submitted 2 November, 2024;
originally announced November 2024.
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Longitudinal and transverse mobilities of $n$-type monolayer transition metal dichalcogenides in the presence of proximity-induced interactions at low temperature
Authors:
J. Liu,
W. Xu,
Y. M. Xiao,
L. Ding,
H. W. Li,
B. Van Duppen,
M. V. Milošević,
F. M. Peeters
Abstract:
We present a detailed theoretical investigation on the electronic transport properties of $n$-type monolayer (ML) transition metal dichalcogenides (TMDs) at low temperature in the presence of proximity-induced interactions such as Rashba spin-orbit coupling (RSOC) and the exchange interaction. The electronic band structure is calculated by solving the Schrödinger equation with a…
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We present a detailed theoretical investigation on the electronic transport properties of $n$-type monolayer (ML) transition metal dichalcogenides (TMDs) at low temperature in the presence of proximity-induced interactions such as Rashba spin-orbit coupling (RSOC) and the exchange interaction. The electronic band structure is calculated by solving the Schrödinger equation with a $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian, and the electric screening induced by electron-electron interaction is evaluated under a standard random phase approximation approach. In particular, the longitudinal and transverse or Hall mobilities are calculated by using a momentum-balance equation derived from a semi-classical Boltzmann equation, where the electron-impurity interaction is considered as the principal scattering center at low temperature. The obtained results show that the RSOC can induce the in-plane spin components for spin-split subbands in different valleys, while the exchange interaction can lift the energy degeneracy for electrons in different valleys. The opposite signs of Berry curvatures in the two valleys would introduce opposite directions of Lorentz force on valley electrons. As a result, the transverse currents from nondegenerate valleys can no longer be canceled out so that the transverse current or Hall mobility can be observed. Interestingly, we find that at a fixed effective Zeeman field, the lowest spin-split conduction subband in ML-TMDs can be tuned from one in the $K'$-valley to one in the $K$-valley by varying the Rashba parameter. The occupation of electrons in different valleys also varies with changing carrier density. Therefore, we can change the magnitude and direction of the Hall current by varying the Rashba parameter, effective Zeeman field, and carrier density by, e.g., the presence of a ferromagnetic substrate and/or applying a gate voltage.
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Submitted 2 November, 2024;
originally announced November 2024.
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Energy levels and Aharonov-Bohm oscillations in twisted bilayer graphene quantum dots and rings
Authors:
N. S. Bandeira,
Andrey Chaves,
L. V. de Castro,
R. N. Costa Filho,
M. Mirzakhani,
F. M. Peeters,
D. R. da Costa
Abstract:
We present a systematic study of the energy levels of twisted bilayer graphene (tBLG) quantum dots (QD) and rings (QR) under an external perpendicular magnetic field. The confinement structures are modeled by a circular dot-like- and ring-like-shaped site-dependent staggered potential, which prevents edge effects and leads to an energy gap between the electron and hole states. Results are obtained…
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We present a systematic study of the energy levels of twisted bilayer graphene (tBLG) quantum dots (QD) and rings (QR) under an external perpendicular magnetic field. The confinement structures are modeled by a circular dot-like- and ring-like-shaped site-dependent staggered potential, which prevents edge effects and leads to an energy gap between the electron and hole states. Results are obtained within the tight-binding model with interlayer hopping parameters defined by the Slater-Koster form for different interlayer twist angles $θ$. Our findings show that, for $θ$ around 0$^\circ$ or $60^\circ$, the energy spectra exhibit features resulting from the interplay between characteristics of the AA and AB/BA stacking orders that compose the moiré pattern of such tBLG, while the low-energy levels are shown to be nearly independent on the rotation angle for $10^\circ\lesssim θ\lesssim 50^\circ$. In the absence of a magnetic field, the energy levels of the QR scale with its width $W$ according to a power law $W^{-α}$, whose exponent $1 \lessapproxα\lessapprox 2$ depends on the twist angle. Most interestingly, the lowest energy states of tBLG QRs oscillate as a function of its average radius, with the oscillation period matching half of the moiré period. In the presence of an intense magnetic field, the lowest energy levels for the tBLG QDs and QRs match almost perfectly, regardless of whether the external radius of the quantum confinement structure is smaller or on the order of the moiré period, which is due to the interplay of the trigonal warping effect and the preferential localization of the eigenstates. Our results reveal relevant information about the moiré pattern in tBLG and its role in charge particle confinement.
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Submitted 15 October, 2024;
originally announced October 2024.
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Ultrasensitive acoustic graphene plasmons in a graphene-transition metal dichalcogenide heterostructure: strong plasmon-phonon coupling and wavelength sensitivity enhanced by a metal screen
Authors:
Ícaro R. Lavora,
Z. H. Tao,
H. M. Dongd,
Andrey Chaves,
F. M. Peeters,
Milorad V. Milosevic
Abstract:
Acoustic plasmons in graphene exhibit strong confinement induced by a proximate metal surface and hybridize with phonons of transition metal dichalcogenides (TMDs) when these materials are combined in a van der Waals heterostructure, thus forming screened graphene plasmon-phonon polaritons (SGPPPs), a type of acoustic mode. While SGPPPs are shown to be very sensitive to the dielectric properties o…
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Acoustic plasmons in graphene exhibit strong confinement induced by a proximate metal surface and hybridize with phonons of transition metal dichalcogenides (TMDs) when these materials are combined in a van der Waals heterostructure, thus forming screened graphene plasmon-phonon polaritons (SGPPPs), a type of acoustic mode. While SGPPPs are shown to be very sensitive to the dielectric properties of the environment, enhancing the SGPPPs coupling strength in realistic heterostructures is still challenging. Here we employ the quantum electrostatic heterostructure model, which builds upon the density functional theory calculations for monolayers, to show that the use of a metal as a substrate for graphene-TMD heterostructures (i) vigorously enhances the coupling strength between acoustic plasmons and the TMD phonons, and (ii) markedly improves the sensitivity of the plasmon wavelength on the structural details of the host platform in real space, thus allowing one to use the effect of environmental screening on acoustic plasmons to probe the structure and composition of a van der Waals heterostructure down to the monolayer resolution.
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Submitted 21 June, 2024;
originally announced June 2024.
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Electronic and magnetic properties of graphene-fluorographene nanoribbons: Controllable semiconductor-metal transition
Authors:
R. M. Guzmán-Arellano,
A. D. Hernández-Nieves,
F. M. Peeters,
Gonzalo Usaj
Abstract:
We investigate the electronic and magnetic properties of graphene channels ($2$--$4$~nm wide) embedded within fluorographene, focusing on two distinct interfaces: the fully fluorinated $α$ interface and the half-fluorinated $β$ interface. Density functional theory (DFT) calculations reveal that $αα$ systems exhibit semiconducting behavior with antiferromagnetic ordering, closely resembling pristin…
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We investigate the electronic and magnetic properties of graphene channels ($2$--$4$~nm wide) embedded within fluorographene, focusing on two distinct interfaces: the fully fluorinated $α$ interface and the half-fluorinated $β$ interface. Density functional theory (DFT) calculations reveal that $αα$ systems exhibit semiconducting behavior with antiferromagnetic ordering, closely resembling pristine zigzag graphene nanoribbons. In contrast, $αβ$ systems display ferromagnetism and a width-dependent semiconductor-to-metal transition. To enable the study of larger systems, we develop and validate effective Hubbard models for both $αα$ and $αβ$ channels. Building upon DFT results and a Wannier function analysis, these models accurately reproduce the electronic structure and magnetic ordering observed in DFT calculations. Crucially, our $αβ$ model successfully captures the semiconductor-to-metal transition. Application of this model to larger systems reveals the persistence of a ferromagnetic state with spin polarization localized at the $α$ edge. Our results demonstrate the potential of fluorination for targeted property engineering and provide a basis for exploring graphene-fluorographene systems in device applications ranging from microelectronics to spintronics.
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Submitted 30 September, 2024; v1 submitted 15 June, 2024;
originally announced June 2024.
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Unconventional superconducting diode effects via antisymmetry and antisymmetry breaking
Authors:
Chong Li,
Yang-Yang Lyu,
Wen-Cheng Yue,
Peiyuan Huang,
Haojie Li,
Tianyu Li,
Chen-Guang Wang,
Zixiong Yuan,
Ying Dong,
Xiaoyu Ma,
Xuecou Tu,
Tao Tao,
Sining Dong,
Liang He,
Xiaoqing Jia,
Guozhu Sun,
Lin Kang,
Huabing Wang,
Francois M. Peeters,
Milorad V. Milošević,
Peiheng Wu,
Yong-Lei Wang
Abstract:
Symmetry-breaking plays a pivotal role in unlocking intriguing properties and functionalities in material systems. For example, the breaking of spatial and temporal symmetries leads to a fascinating phenomenon of superconducting diode effect. However, generating and precisely controlling the superconducting diode effect poses significant challenges. Here, we take a novel route with deliberate mani…
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Symmetry-breaking plays a pivotal role in unlocking intriguing properties and functionalities in material systems. For example, the breaking of spatial and temporal symmetries leads to a fascinating phenomenon of superconducting diode effect. However, generating and precisely controlling the superconducting diode effect poses significant challenges. Here, we take a novel route with deliberate manipulation of magnetic charge potentials to realize unconventional superconducting flux-quantum diode effects. We achieve this through suitably tailored nanoengineered arrays of nanobar magnets on top of a superconducting thin film. We demonstrate the vital roles of inversion antisymmetry and its breaking in evoking unconventional superconducting effects-a magnetically symmetric diode effect and an odd-parity magnetotransport effect. These effects are non-volatilely controllable through in-situ magnetization switching of the nanobar magnets. Our findings promote the use of antisymmetry (breaking) for initiating unconventional superconducting properties, paving the way for exciting prospects and innovative functionalities in superconducting electronics.
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Submitted 12 April, 2024;
originally announced April 2024.
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Control of proton transport and hydrogenation in double-gated graphene
Authors:
J. Tong,
Y. Fu,
D. Domaretskiy,
F. Della Pia,
P. Dagar,
L. Powell,
D. Bahamon,
S. Huang,
B. Xin,
R. N. Costa Filho,
L. F. Vega,
I. V. Grigorieva,
F. M. Peeters,
A. Michaelides,
M. Lozada-Hidalgo
Abstract:
The basal plane of graphene can function as a selective barrier that is permeable to protons but impermeable to all ions and gases, stimulating its use in applications such as membranes, catalysis and isotope separation. Protons can chemically adsorb on graphene and hydrogenate it, inducing a conductor-insulator transition that has been explored intensively in graphene electronic devices. However,…
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The basal plane of graphene can function as a selective barrier that is permeable to protons but impermeable to all ions and gases, stimulating its use in applications such as membranes, catalysis and isotope separation. Protons can chemically adsorb on graphene and hydrogenate it, inducing a conductor-insulator transition that has been explored intensively in graphene electronic devices. However, both processes face energy barriers and various strategies have been proposed to accelerate proton transport, for example by introducing vacancies, incorporating catalytic metals or chemically functionalizing the lattice. However, these techniques can compromise other properties, such as ion selectivity or mechanical stability. Here we show that independent control of the electric field, E, at around 1 V nm-1, and charge-carrier density, n, at around 1 x 10^14 cm-2, in double-gated graphene allows the decoupling of proton transport from lattice hydrogenation and can thereby accelerate proton transport such that it approaches the limiting electrolyte current for our devices. Proton transport and hydrogenation can be driven selectively with precision and robustness, enabling proton-based logic and memory graphene devices that have on-off ratios spanning orders of magnitude. Our results show that field effects can accelerate and decouple electrochemical processes in double-gated 2D crystals and demonstrate the possibility of mapping such processes as a function of E and n, which is a new technique for the study of 2D electrode-electrolyte interfaces.
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Submitted 25 April, 2024; v1 submitted 10 April, 2024;
originally announced April 2024.
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Optical absorption window in Na$_3$Bi based three-dimensional Dirac electronic system
Authors:
Q. N. Li,
W. Xu,
Y. M. Xiao,
L. Ding,
B. Van Duppen,
F. M. Peeters
Abstract:
We present a detailed theoretical study of the optoelectronic properties of a Na$_3$Bi-based three-dimensional Dirac electronic system (3DDES). The optical conductivity is evaluated using the energy-balance equation derived from a Boltzmann equation, where the electron Hamiltonian is taken from a simplified $\mathbf{k}\cdotp \mathbf{p}$ approach. We find that for short-wavelength irradiation, the…
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We present a detailed theoretical study of the optoelectronic properties of a Na$_3$Bi-based three-dimensional Dirac electronic system (3DDES). The optical conductivity is evaluated using the energy-balance equation derived from a Boltzmann equation, where the electron Hamiltonian is taken from a simplified $\mathbf{k}\cdotp \mathbf{p}$ approach. We find that for short-wavelength irradiation, the optical absorption in Na$_3$Bi is mainly due to inter-band electronic transitions. In contrast to the universal optical conductance observed for graphene, the optical conductivity for Na$_3$Bi based 3DDES depends on the radiation frequency but not on temperature, carrier density and electronic relaxation time. In the radiation wavelength regime of about 5 $μm<λ<$ 200 $μm$, an optical absorption window is found. This is similar to what is observed in graphene. The position and width of the absorption window depend on the direction of the light polarization and sensitively on temperature, carrier density, and electronic relaxation time. Particularly, we demonstrate that the inter-band optical absorption channel can be switched on and off by applying the gate voltage. This implies that similar to graphene, Na$_3$Bi based 3DDES can also be applied in infrared electro-optical modulators. Our theoretical findings are helpful in gaining an in-depth understanding of the basic optoelectronic properties of recently discovered 3DDESs.
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Submitted 7 April, 2024;
originally announced April 2024.
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Valley-selective confinement of excitons in transition metal dichalcogenides with inhomogeneous magnetic fields
Authors:
A. J. Chaves,
D. R. da Costa,
F. M. Peeters,
Nuno M. R. Peres
Abstract:
Magnetized ferromagnetic disks or wires support strong inhomogeneous fields in their borders. Such magnetic fields create an effective potential, due to Zeeman and diamagnetic contributions, that can localize charge carriers. For the case of two-dimensional transition metal dichalcogenides, this potential can valley-localize excitons due to the Zeeman term, which breaks the valley symmetry. We sho…
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Magnetized ferromagnetic disks or wires support strong inhomogeneous fields in their borders. Such magnetic fields create an effective potential, due to Zeeman and diamagnetic contributions, that can localize charge carriers. For the case of two-dimensional transition metal dichalcogenides, this potential can valley-localize excitons due to the Zeeman term, which breaks the valley symmetry. We show that the diamagnetic term is negligible when compared to the Zeeman term for monolayers of transition metal dichalcogenides. The latter is responsible for trapping excitons near the magnetized structure border with valley-dependent characteristics, in which, for one of the valleys, the exciton is confined inside the disk, while for the other, it is outside. This spatial valley separation of exciton can be probed by circularly polarized light, and moreover, we show that the inhomogeneous magnetic field magnitude, the dielectric environment, and the magnetized structure parameters can tailor the spatial separation of the exciton wavefunctions.
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Submitted 7 March, 2024;
originally announced March 2024.
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Band engineering of phosphorene/graphene van der Waals nanoribbons toward high-efficiency thermoelectric devices
Authors:
Maryam Mahdavifar,
Farhad Khoeini,
Francois M. Peeters
Abstract:
Vertical integration of dissimilar layered materials in a so-called van der Waals (vdW) heterostructure (HS) has emerged as a useful tool to engineer band alignments and interfaces. In this paper, we investigate thermoelectric currents in a phosphorene/graphene vdW nanoribbon consisting of an armchair graphene nanoribbon (AGNR) stacked on an armchair phosphorene nanoribbon (APNR). We focus on the…
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Vertical integration of dissimilar layered materials in a so-called van der Waals (vdW) heterostructure (HS) has emerged as a useful tool to engineer band alignments and interfaces. In this paper, we investigate thermoelectric currents in a phosphorene/graphene vdW nanoribbon consisting of an armchair graphene nanoribbon (AGNR) stacked on an armchair phosphorene nanoribbon (APNR). We focus on the currents driven by a temperature difference between the leads in a two-probe junction. In contrast to pristine AGNRs and APNRs, such an armchair-edged HS can provide several nano-amperes of the current at room temperature, without any external field. External electric fields modify the electronic band structure and are able to induce a type-I to type-II band alignment transition and a direct-to-indirect band gap transition. Biasing the APNR/AGNR by an external electric field is found to strongly increase the thermally induced current and also control the direction of current flow at moderate temperatures. These results are important for potential applications of the APNR/AGNR vdW HS in flexible electronics and thermoelectric devices.
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Submitted 12 February, 2024;
originally announced February 2024.
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Two New Members of the Covalent Organic Frameworks Family: Crystalline 2D-Oxocarbon and 3D-Borocarbon Structures
Authors:
N. Hassani,
A. Movafegh-Ghadirli,
Z. Mahdavifar,
F. M. Peeters,
M. Neek-Amal
Abstract:
While graphene oxide (GO) is representative of a disordered phase of oxocarbons with lackluster electronic properties, the coexistence of ordered, stoichiometric solid-state carbon oxides with graphene brings renewed momentum to the exploration of two-dimensional crystalline oxocarbons. This enduring subject, spanning decades, has recently witnessed significant advancements. In this context, our s…
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While graphene oxide (GO) is representative of a disordered phase of oxocarbons with lackluster electronic properties, the coexistence of ordered, stoichiometric solid-state carbon oxides with graphene brings renewed momentum to the exploration of two-dimensional crystalline oxocarbons. This enduring subject, spanning decades, has recently witnessed significant advancements. In this context, our study delves into a novel material class, COF-66, notable for its meticulously ordered two-dimensional crystalline structure and intrinsic porosity. Employing a global optimization algorithm alongside density-functional calculations, our investigation highlights a standout member within the COF-66 family exceptional quasi-flat oxocarbon (C6O6)exhibiting an unconventional oxygen-decorated pore configuration. This pioneering study introduces C6O6 as an innovative entrant into the crystalline carbon oxide arena, augmenting the established understanding alongside the well-recognized graphene oxide and two graphene monoxide, i.e. α-GMO and \b{eta}-GMO. Expanding the exploration, the COF-66 series encompasses 2D-porous carbon nitride (C6N6) and the recently synthesized 2D-porous boroxine (B6O6), adhering to a generalized stoichiometry of X6Y6, where X = B, C, and Y = B, N, O, with X 6= Y. Remarkably, the entire COF-66 ensemble adopts a 2D-crystalline framework, with the exception of C6B6, which assumes a distinct 3D-crystalline arrangement. Employing the PBE (HSE06) level of theory, our electronic structure calculations yield band gap values of 0.01 (0.05) eV, 3.68 (5.29) eV, 0.00 (0.23) eV, and 1.53 (3.09) eV for B6N6, B6O6, C6B6, and C6N6, respectively, reinforcing and aligning with prior investigations.
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Submitted 22 January, 2024;
originally announced January 2024.
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Rectangular carbon nitrides C4N monolayers with a zigzag buckled structure: Quasi-one-dimensional Dirac nodal lines and topological flat edge states
Authors:
Linyang Li,
Jialei Li,
Yawei Yu,
Yuxuan Song,
Jia Li,
Xiaobiao Liu,
François M. Peeters,
Xin Chen,
Guodong Liu
Abstract:
Due to the flexibility of C and N atoms in forming different types of bonds, the prediction of new two-dimensional (2D) carbon nitrides is a hot topic in the field of carbon-based materials. Using first-principles calculations, we propose two C4N monolayers with a zigzag buckled (ZB) structure. The ZB C4N monolayers contain raised-C (raised-N) atoms with sp3 hybridization, different from the tradi…
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Due to the flexibility of C and N atoms in forming different types of bonds, the prediction of new two-dimensional (2D) carbon nitrides is a hot topic in the field of carbon-based materials. Using first-principles calculations, we propose two C4N monolayers with a zigzag buckled (ZB) structure. The ZB C4N monolayers contain raised-C (raised-N) atoms with sp3 hybridization, different from the traditional 2D graphene-like carbon nitride materials with sp2 hybridization. Interestingly, the band structures of the ZB C4N monolayers exhibit quasi-one-dimensional (quasi-1D) Dirac nodal line that results from the corresponding quasi-1D structure of the zigzag carbon chains, which is essentially different from the more common ring-shaped nodal line. The quasi-1D Dirac nodal line exhibits the following features: (i) gapless Dirac points, (ii) varying Fermi velocity, and (iii) slightly curved band along the high-symmetry path. All these features are successfully explained by our proposed tight-binding model that includes interactions up to the third nearest-neighbor. The Fermi velocity of the 2D system can reach 105 m/s, which is promising for applications in high-speed electronic devices. The topological flat band structure determined by the Zak phase and band inversion of the corresponding 1D system is edge-dependent, which is corresponding to the Su-Schrieffer-Heeger model, providing to rich physical phenomena.
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Submitted 7 January, 2024;
originally announced January 2024.
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Optical spectrum of $n$-type and $p$-type monolayer MoS$_2$ in the presence of proximity-induced interactions
Authors:
J. Liu,
W. Xu,
Y. M. Xiao,
L. Ding,
H. W. Li,
F. M. Peeters
Abstract:
In this paper, we examined the effects of proximity-induced interactions such as Rashba spin-orbit coupling (SOC) and effective Zeeman fields (EZFs) on the optical spectrum of $n$-type and $p$-type monolayer (ML)-MoS$_2$. The optical conductivity is evaluated using the standard Kubo formula under Random phase approximation (RPA) with including the effective electron-electron interaction. It has be…
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In this paper, we examined the effects of proximity-induced interactions such as Rashba spin-orbit coupling (SOC) and effective Zeeman fields (EZFs) on the optical spectrum of $n$-type and $p$-type monolayer (ML)-MoS$_2$. The optical conductivity is evaluated using the standard Kubo formula under Random phase approximation (RPA) with including the effective electron-electron interaction. It has been found that there exists two absorption peaks in $n$-type ML-MoS$_{2}$ and two knife shaped absorptions in $p$-type ML-MoS$_{2}$ which are contributed by the inter-subband spin flip electronic transitions within conduction and valence bands at valleys $K$ and $K'$ with a lifted valley degeneracy. The optical absorptions in $n$-type and $p$-type ML-MoS$_{2}$ occur in THz and infrared radiation regimes and the position, height, and shape of them can be effectively tuned by Rashba parameter, EZFs parameters, and carrier density. The interesting theoretical predictions in this study would be helpful for the experimental observation of the optical absorption in infrared to THz bandwidths contributed by inter-subband spin flip electronic transitions in a lifted valley degeneracy monolayer transition metal dichalcogenides (ML-TMDs) system. The obtained results indicate that ML-MoS$_{2}$ with the platform of proximity interactions make it a promising infrared and THz material for optics and optoelectronics.
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Submitted 12 December, 2023;
originally announced December 2023.
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Charged vacancy in graphene: interplay between Landau levels and atomic collapse resonances
Authors:
Jing Wang,
Wen-Sheng Zhao,
Yue Hu,
R. N. Costa Filho,
Francois M. Peeters
Abstract:
The interplay between a magnetic field and the Coulomb potential from a charged vacancy on the electron states in graphene is investigated within the tight-binding model. The Coulomb potential removes locally Landau level degeneracy, while the vacancy introduces a satellite level next to the normal Landau level. These satellite levels are found throughout the positive energy region, but in the neg…
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The interplay between a magnetic field and the Coulomb potential from a charged vacancy on the electron states in graphene is investigated within the tight-binding model. The Coulomb potential removes locally Landau level degeneracy, while the vacancy introduces a satellite level next to the normal Landau level. These satellite levels are found throughout the positive energy region, but in the negative energy region they turn into atomic collapse resonances. Crossings between Landau levels with different angular quantum number $m$ are found. Unlike the point impurity system in which an anticrossing occurs between Landau levels of the same $m$, in this work anticrossing is found between the normal Landau level and the vacancy induced level. The atomic collapse resonance hybridize with the Landau levels. The charge at which the lowest Landau level $m = -1, N = 1$ crosses increases $E = 0$ with enhancing magnetic field. Landau level scaling anomaly occurs when the charge is larger than the critical charge $β\approx0.6$ and this critical charge is independent of the magnetic field.
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Submitted 14 November, 2023;
originally announced November 2023.
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Gate-controlled suppression of light-driven proton transport through graphene electrodes
Authors:
S. Huang,
E. Griffin,
J. Cai,
B. Xin,
J. Tong,
Y. Fu,
V. Kravets,
F. M. Peeters,
M. Lozada-Hidalgo
Abstract:
Recent experiments demonstrated that proton transport through graphene electrodes can be accelerated by over an order of magnitude with low intensity illumination. Here we show that this photo-effect can be suppressed for a tuneable fraction of the infrared spectrum by applying a voltage bias. Using photocurrent measurements and Raman spectroscopy, we show that such fraction can be selected by tun…
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Recent experiments demonstrated that proton transport through graphene electrodes can be accelerated by over an order of magnitude with low intensity illumination. Here we show that this photo-effect can be suppressed for a tuneable fraction of the infrared spectrum by applying a voltage bias. Using photocurrent measurements and Raman spectroscopy, we show that such fraction can be selected by tuning the Fermi energy of electrons in graphene with a bias, a phenomenon controlled by Pauli blocking of photo-excited electrons. These findings demonstrate a dependence between graphene's electronic and proton transport properties and provide fundamental insights into molecularly thin electrode-electrolyte interfaces and their interaction with light.
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Submitted 12 October, 2023;
originally announced October 2023.
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Proton transport through nanoscale corrugations in two-dimensional crystals
Authors:
O. J. Wahab,
E. Daviddi,
B. Xin,
P. Z. Sun,
E. Griffin,
A. W. Colburn,
D. Barry,
M. Yagmurcukardes,
F. M. Peeters,
A. K. Geim,
M. Lozada-Hidalgo,
P. R. Unwin
Abstract:
Defect-free graphene is impermeable to all atoms and ions at ambient conditions. Experiments that can resolve gas flows of a few atoms per hour through micrometre-sized membranes found that monocrystalline graphene is completely impermeable to helium, the smallest of atoms. Such membranes were also shown to be impermeable to all ions, including the smallest one, lithium. On the other hand, graphen…
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Defect-free graphene is impermeable to all atoms and ions at ambient conditions. Experiments that can resolve gas flows of a few atoms per hour through micrometre-sized membranes found that monocrystalline graphene is completely impermeable to helium, the smallest of atoms. Such membranes were also shown to be impermeable to all ions, including the smallest one, lithium. On the other hand, graphene was reported to be highly permeable to protons, nuclei of hydrogen atoms. There is no consensus, however, either on the mechanism behind the unexpectedly high proton permeability or even on whether it requires defects in graphene's crystal lattice. Here using high resolution scanning electrochemical cell microscopy (SECCM), we show that, although proton permeation through mechanically-exfoliated monolayers of graphene and hexagonal boron nitride cannot be attributed to any structural defects, nanoscale non-flatness of 2D membranes greatly facilitates proton transport. The spatial distribution of proton currents visualized by SECCM reveals marked inhomogeneities that are strongly correlated with nanoscale wrinkles and other features where strain is accumulated. Our results highlight nanoscale morphology as an important parameter enabling proton transport through 2D crystals, mostly considered and modelled as flat, and suggest that strain and curvature can be used as additional degrees of freedom to control the proton permeability of 2D materials.
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Submitted 8 May, 2023;
originally announced May 2023.
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Magnetism in twisted triangular bilayer graphene quantum dots
Authors:
M. Mirzakhani,
H. C. Park,
F. M. Peeters,
D. R. da Costa
Abstract:
Using a tight-binding model along with the mean-field Hubbard method, we investigate the effect of twisting angle on the magnetic properties of twisted bilayer graphene (tBLG) quantum dots (QDs) with triangular shape and zigzag edges. We consider such QDs in two configurations: when their initial untwisted structure is a perfect AA- or AB-stacked BLG, referred to as AA- or AB-like dots. We find th…
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Using a tight-binding model along with the mean-field Hubbard method, we investigate the effect of twisting angle on the magnetic properties of twisted bilayer graphene (tBLG) quantum dots (QDs) with triangular shape and zigzag edges. We consider such QDs in two configurations: when their initial untwisted structure is a perfect AA- or AB-stacked BLG, referred to as AA- or AB-like dots. We find that AA-like dots exhibit an antiferromagnetic spin polarization for small twist angles, which transits to a ferromagnetic spin polarization beyond a critical twisting angle $θ_c$. Our analysis shows that $θ_c$ decreases as the dot size increases, obeying a criterion, according to which once the maximum energy difference between electron and hole edge states (in the single-particle picture) is less than $(U / γ_0)\, t_0$, the spin-polarized energy levels are aligned ferromagnetically [$U$ is the Hubbard parameter and $γ_0$ ($t_0$) the graphene intralayer (interlayer) hopping]. Unlike AA-like dots, AB-like dots exhibit finite magnetization for any twist angle. Furthermore, in the ferromagnetic polarization state, the ground net spin for both dot configurations agrees with prediction from Lieb's theorem.
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Submitted 12 April, 2023;
originally announced April 2023.
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Flattening conduction and valence bands for interlayer excitons in a moiré MoS$_2$/WSe$_2$ heterobilayer
Authors:
Sara Conti,
Andrey Chaves,
Tribhuwan Pandey,
Lucian Covaci,
François M. Peeters,
David Neilson,
Milorad V. Milošević
Abstract:
We explore the flatness of conduction and valence bands of interlayer excitons in MoS$_2$/WSe$_2$ van der Waals heterobilayers, tuned by interlayer twist angle, pressure, and external electric field. We employ an efficient continuum model where the moiré pattern from lattice mismatch and/or twisting is represented by an equivalent mesoscopic periodic potential. We demonstrate that the mismatch moi…
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We explore the flatness of conduction and valence bands of interlayer excitons in MoS$_2$/WSe$_2$ van der Waals heterobilayers, tuned by interlayer twist angle, pressure, and external electric field. We employ an efficient continuum model where the moiré pattern from lattice mismatch and/or twisting is represented by an equivalent mesoscopic periodic potential. We demonstrate that the mismatch moiré potential is too weak to produce significant flattening. Moreover, we draw attention to the fact that the quasi-particle effective masses around the $Γ$-point and the band flattening are \textit{reduced} with twisting. As an alternative approach, we show (i) that reducing the interlayer distance by uniform vertical pressure can significantly increase the effective mass of the moiré hole, and (ii) that the moiré depth and its band flattening effects are strongly enhanced by accessible electric gating fields perpendicular to the heterobilayer, with resulting electron and hole effective masses increased by more than an order of magnitude leading to record-flat bands. These findings impose boundaries on the commonly generalized benefits of moiré twistronics, while also revealing alternate feasible routes to achieve truly flat electron and hole bands to carry us to strongly correlated excitonic phenomena on demand.
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Submitted 14 March, 2023;
originally announced March 2023.
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Enhanced thermoelectric properties in phosphorene nanorings
Authors:
Fatemeh Moghadasi Borojeni,
Esmaeil Taghizadeh Sisakht,
Farhad Fazileh,
F. M. Peeters
Abstract:
Using the tight-binding approach, we investigate the thermoelectric (TE) properties of rectangular phosphorene nanorings for both symmetrically and asymmetrically attaching to phosphorene nanoribbon leads. We design our phosphorene-based nanostructures to enhance the TE performance in the absence and the presence of perpendicular magnetic fields. Our results show that when zigzag phosphorene nanor…
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Using the tight-binding approach, we investigate the thermoelectric (TE) properties of rectangular phosphorene nanorings for both symmetrically and asymmetrically attaching to phosphorene nanoribbon leads. We design our phosphorene-based nanostructures to enhance the TE performance in the absence and the presence of perpendicular magnetic fields. Our results show that when zigzag phosphorene nanoribbons (ZPNRs) are coupled symmetrically to rectangular rings, a comparatively large band gap is induced in the electronic conductance due to the suppression of the contribution of edge states. This gives rise to a remarkable increase in the thermopower response compared to the case of pristine ZPNRs. More intriguingly, we found that though the maximum power factor in this system is about the same as the one for its ZPNR counterpart, the much smaller electronic thermal conductance of this phosphorene-based nanostructure can remarkably contribute to the improvement of the figure of merit. Also, we found that the symmetry/asymmetry of our designed nanostructures, the geometrical characteristics of the ring, and the magnetic flux are three important factors that control the thermoelectric properties of phosphorene quantum rings. Our numerical calculations show that by changing the magnetic flux through the nanoring, a drastic increase in the thermopower is observed near an antiresonance point. We demonstrate the tunability of the thermopower and the possibility to switch on and off the TE response of phosphorene nanorings with the magnetic flux. Moreover, for asymmetric connection configurations with armchair-edged leads, we found that though the thermopower is almost intact, a remarkable reduction of the electronic thermal conductance can lead to a notable improvement in the figure of merit. Our results suggest phosphorene nanorings as promising candidate nanostructures for TE applications.
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Submitted 20 December, 2022;
originally announced December 2022.
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The overlooked role of band-gap parameter in characterization of Landau levels in a gapped phase semi-Dirac system: the monolayer phosphorene case
Authors:
Esmaeil Taghizadeh Sisakht,
Farhad Fazileh,
S. Javad Hashemifar,
Francois M. Peeters
Abstract:
Two-dimensional gapped semi-Dirac (GSD) materials are systems with a finite band gap that their charge carriers behave relativistically in one direction and Schrödinger-like in the other. In the present work, we show that besides the two well-known energy bands features (curvature and chirality), the band-gap parameter also play a crucial role in the index- and magnetic field-dependence of the Lan…
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Two-dimensional gapped semi-Dirac (GSD) materials are systems with a finite band gap that their charge carriers behave relativistically in one direction and Schrödinger-like in the other. In the present work, we show that besides the two well-known energy bands features (curvature and chirality), the band-gap parameter also play a crucial role in the index- and magnetic field-dependence of the Landau levels (LLs) in a GSD system. We take the monolayer phosphorene as a GSD representative example to explicitly provide physical insights into the role of this parameter in determining the index- and magnetic field-dependence of LLs. We derive an effective one-dimensional Schrödinger equation for charge carriers in the presence of a perpendicular magnetic field and argue that the form of its effective potential is clearly sensitive to a dimensionless band-gap that is tunable by structural parameters. The theoretical magnitude of this effective gap and its interplay with oval shape $k$-space cyclotron orbits resolve the seeming contradiction in determining the type of the quantum Hall effect in the pristine monolayer phosphorene. Our results strongly confirm that the dependence of LLs on the magnetic field in this GSD material is as conventional two-dimensional semiconductor electron gases up to a very high field regime. Using the strain-induced gap modification scheme, we show the field dependence of the LLs continuously evolves into $B^{2/3}$ behavior, which holds for a gapless semi-Dirac system. The highlighted role of the band-gap parameter may affect the consequences of the band anisotropy in the physical properties of a GSD material, including magnetotransport, optical conductivity, dielectric function, and thermoelectric performance.
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Submitted 9 November, 2022;
originally announced November 2022.
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Photo-accelerated water dissociation across one-atom-thick electrodes
Authors:
J. Cai,
E. Griffin,
V. Guarochico-Moreira,
D. Barry,
B. Xin,
S. Huang,
A. K. Geim,
F. M. Peeters,
M. Lozada-Hidalgo
Abstract:
Recent experiments demonstrated that interfacial water dissociation (H2O = H+ + OH-) could be accelerated exponentially by an electric field applied to graphene electrodes, a phenomenon related to the Wien effect. Here we report an order-of-magnitude acceleration of the interfacial water dissociation reaction under visible-light illumination. This process is accompanied by spatial separation of pr…
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Recent experiments demonstrated that interfacial water dissociation (H2O = H+ + OH-) could be accelerated exponentially by an electric field applied to graphene electrodes, a phenomenon related to the Wien effect. Here we report an order-of-magnitude acceleration of the interfacial water dissociation reaction under visible-light illumination. This process is accompanied by spatial separation of protons and hydroxide ions across one-atom-thick graphene and enhanced by strong interfacial electric fields. The found photo-effect is attributed to the combination of graphene's perfect selectivity with respect to protons, which prevents proton-hydroxide recombination, and to proton transport acceleration by the Wien effect, which occurs in synchrony with the water dissociation reaction. Our findings provide fundamental insights into ion dynamics near atomically-thin proton-selective interfaces and suggest that strong interfacial fields can enhance and tune very fast ionic processes, which is of relevance for applications in photo-catalysis and designing reconfigurable materials.
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Submitted 31 October, 2022;
originally announced October 2022.
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Wien effect in interfacial water dissociation through proton-permeable graphene electrodes
Authors:
J. Cai,
E. Griffin,
V. Guarochico-Moreira,
D. Barry,
B. Xin,
M. Yagmurcukardes,
S. Zhang,
A. K. Geim,
F. M. Peeters,
M. Lozada-Hidalgo
Abstract:
Strong electric fields can accelerate molecular dissociation reactions. The phenomenon known as the Wien effect was previously observed using high-voltage electrolysis cells that produced fields of about 10^7 V m-1, sufficient to accelerate the dissociation of weakly bound molecules (e.g., organics and weak electrolytes). The observation of the Wien effect for the common case of water dissociation…
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Strong electric fields can accelerate molecular dissociation reactions. The phenomenon known as the Wien effect was previously observed using high-voltage electrolysis cells that produced fields of about 10^7 V m-1, sufficient to accelerate the dissociation of weakly bound molecules (e.g., organics and weak electrolytes). The observation of the Wien effect for the common case of water dissociation (H2O = H+ + OH-) has remained elusive. Here we study the dissociation of interfacial water adjacent to proton-permeable graphene electrodes and observe strong acceleration of the reaction in fields reaching above 10^8 V m-1. The use of graphene electrodes allow measuring the proton currents arising exclusively from the dissociation of interfacial water, while the electric field driving the reaction is monitored through the carrier density induced in graphene by the same field. The observed exponential increase in proton currents is in quantitative agreement with Onsager's theory. Our results also demonstrate that graphene electrodes can be valuable for the investigation of various interfacial phenomena involving proton transport.
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Submitted 23 August, 2022;
originally announced August 2022.
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Field-free superconducting diode in a magnetically nanostructured superconductor
Authors:
Ji Jiang,
M. V. Milošević,
Yong-Lei Wang,
Zhi-Li Xiao,
F. M. Peeters,
Qing-Hu Chen
Abstract:
A strong superconducting diode effect (SDE) is revealed in a thin superconducting film periodically nanostructured with magnetic dots. The SDE is caused by the current-activated dissipation mitigated by vortex-antivortex pairs (VAPs), which periodically nucleate under the dots, move and annihilate in the superconductor - eventually driving the system to the high-resistive state. Inversing the pola…
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A strong superconducting diode effect (SDE) is revealed in a thin superconducting film periodically nanostructured with magnetic dots. The SDE is caused by the current-activated dissipation mitigated by vortex-antivortex pairs (VAPs), which periodically nucleate under the dots, move and annihilate in the superconductor - eventually driving the system to the high-resistive state. Inversing the polarity of the applied current destimulates the nucleation of VAPs, the system remains superconducting up to far larger currents, leading to the pronounced diodic response. Our dissipative Ginzburg-Landau simulations detail the involved processes, and provide reliable geometric and parametric ranges for the experimental realization of such a non-volatile superconducting diode, which operates in absence of any applied magnetic field while being fluxonic by design.
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Submitted 23 September, 2022; v1 submitted 3 August, 2022;
originally announced August 2022.
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Gas permeation through graphdiyne-based nanoporous membranes
Authors:
Zhihua Zhou,
Yongtao Tan,
Qian Yang,
Achintya Bera,
Zecheng Xiong,
Mehmet Yagmurcukardes,
Minsoo Kim,
Yichao Zou,
Guanghua Wang,
Artem Mishchenko,
Ivan Timokhin,
Canbin Wang,
Hao Wang,
Chongyang Yang,
Yizhen Lu,
Radha Boya,
Honggang Liao,
Sarah Haigh,
Huibiao Liu,
Francois M. Peeters,
Yuliang Li,
Andre K. Geim,
Sheng Hu
Abstract:
Nanoporous membranes based on two dimensional materials are predicted to provide highly selective gas transport in combination with extreme permeability. Here we investigate membranes made from multilayer graphdiyne, a graphene-like crystal with a larger unit cell. Despite being nearly a hundred of nanometers thick, the membranes allow fast, Knudsen-type permeation of light gases such as helium an…
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Nanoporous membranes based on two dimensional materials are predicted to provide highly selective gas transport in combination with extreme permeability. Here we investigate membranes made from multilayer graphdiyne, a graphene-like crystal with a larger unit cell. Despite being nearly a hundred of nanometers thick, the membranes allow fast, Knudsen-type permeation of light gases such as helium and hydrogen whereas heavy noble gases like xenon exhibit strongly suppressed flows. Using isotope and cryogenic temperature measurements, the seemingly conflicting characteristics are explained by a high density of straight-through holes (direct porosity of ~0.1%), in which heavy atoms are adsorbed on the walls, partially blocking Knudsen flows. Our work offers important insights into intricate transport mechanisms playing a role at nanoscale.
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Submitted 2 July, 2022;
originally announced July 2022.
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Alternating superconducting and charge density wave monolayers within bulk 6R-TaS2
Authors:
A. Achari,
J. Bekaert,
V. Sreepal,
A. Orekhov,
P. Kumaravadivel,
M. Kim,
N. Gauquelin,
P. Balakrishna Pillai,
J. Verbeeck,
F. M. Peeters,
A. K. Geim,
M. V. Milosevic,
R. R. Nair
Abstract:
Van der Waals (vdW) heterostructures continue to attract intense interest as a route of designing materials with novel properties that cannot be found in naturally occurring materials. Unfortunately, this approach is currently limited to only a few layers that can be stacked on top of each other. Here we report a bulk material consisting of superconducting monolayers interlayered with monolayers d…
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Van der Waals (vdW) heterostructures continue to attract intense interest as a route of designing materials with novel properties that cannot be found in naturally occurring materials. Unfortunately, this approach is currently limited to only a few layers that can be stacked on top of each other. Here we report a bulk material consisting of superconducting monolayers interlayered with monolayers displaying charge density waves (CDW). This bulk vdW heterostructure is created by phase transition of 1T-TaS2 to 6R at 800 °C in an inert atmosphere. Electron microscopy analysis directly shows the presence of alternating 1T and 1H monolayers within the resulting bulk 6R phase. Its superconducting transition (Tc) is found at 2.6 K, exceeding the Tc of the bulk 2H phase of TaS2. The superconducting temperature can be further increased to 3.6 K by exfoliating 6R-TaS2 and then restacking its layers. Using first-principles calculations, we argue that the coexistence of superconductivity and CDW within 6R-TaS2 stems from amalgamation of the properties of adjacent 1H and 1T monolayers, where the former dominates the superconducting state and the latter the CDW behavior.
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Submitted 23 June, 2022;
originally announced June 2022.
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Electronic Mach-Zehnder interference in a bipolar hybrid monolayer-bilayer graphene junction
Authors:
M. Mirzakhani,
N. Myoung,
F. M. Peeters,
H. C. Park
Abstract:
Graphene matter in a strong magnetic field, realizing one-dimensional quantum Hall channels, provides a unique platform for studying electron interference. Here, using the Landauer-Büttiker formalism along with the tight-binding model, we investigate the quantum Hall (QH) effects in unipolar and bipolar monolayer-bilayer graphene (MLG-BLG) junctions. We find that a Hall bar made of an armchair MLG…
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Graphene matter in a strong magnetic field, realizing one-dimensional quantum Hall channels, provides a unique platform for studying electron interference. Here, using the Landauer-Büttiker formalism along with the tight-binding model, we investigate the quantum Hall (QH) effects in unipolar and bipolar monolayer-bilayer graphene (MLG-BLG) junctions. We find that a Hall bar made of an armchair MLG-BLG junction in the bipolar regime results in valley-polarized edge-channel interferences and can operate a fully tunable Mach-Zehnder (MZ) interferometer device. Investigation of the bar-width and magnetic-field dependence of the conductance oscillations shows that the MZ interference in such structures can be drastically affected by the type of (zigzag) edge termination of the second layer in the BLG region [composed of vertical dimer or non-dimer atoms]. Our findings reveal that both interfaces exhibit a double set of Aharonov-Bohm interferences, with the one between two oppositely valley-polarized edge channels dominating and causing a large-amplitude conductance oscillation ranging from 0 to $ 2 e^2 / h$. We explain and analyze our findings by analytically solving the Dirac-Weyl equation for a gated semi-infinite MLG-BLG junction.
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Submitted 25 May, 2022;
originally announced May 2022.
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Chester supersolid of spatially indirect excitons in double-layer semiconductor heterostructures
Authors:
Sara Conti,
Andrea Perali,
Alexander R. Hamilton,
Milorad V. Milosevic,
Francois M. Peeters,
David Neilson
Abstract:
A supersolid, a counter-intuitive quantum state in which a rigid lattice of particles flows without resistance, has to date not been unambiguously realised. Here we reveal a supersolid ground state of excitons in a double-layer semiconductor heterostructure over a wide range of layer separations outside the focus of recent experiments. This supersolid conforms to the original Chester supersolid wi…
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A supersolid, a counter-intuitive quantum state in which a rigid lattice of particles flows without resistance, has to date not been unambiguously realised. Here we reveal a supersolid ground state of excitons in a double-layer semiconductor heterostructure over a wide range of layer separations outside the focus of recent experiments. This supersolid conforms to the original Chester supersolid with one exciton per supersolid site, as distinct from the alternative version reported in cold-atom systems of a periodic modulation of the superfluid density. We provide the phase diagram augmented by the supersolid. This new phase appears at layer separations much smaller than the predicted exciton normal solid, and it persists up to a solid--solid transition where the quantum phase coherence collapses. The ranges of layer separations and exciton densities in our phase diagram are well within reach of the current experimental capabilities.
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Submitted 13 May, 2022;
originally announced May 2022.
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Anisotropic and tunable optical conductivity of a two-dimensional semi-Dirac system in the presence of elliptically polarized radiation
Authors:
H. Y. Zhang,
Y. M. Xiao,
Q. N. Li,
L. Ding,
B. Van Duppen,
W. Xu,
F. M. Peeters
Abstract:
We investigate the effect of ellipticity ratio of the polarized radiation field on optoelectronic properties of a two-dimensional (2D) semi-Dirac (SD) system. The optical conductivity is calculated within the energy balance equation approach derived from the semiclassical Boltzmann equation. We find that there exists the anisotropic optical absorption induced via both the intra- and interband elec…
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We investigate the effect of ellipticity ratio of the polarized radiation field on optoelectronic properties of a two-dimensional (2D) semi-Dirac (SD) system. The optical conductivity is calculated within the energy balance equation approach derived from the semiclassical Boltzmann equation. We find that there exists the anisotropic optical absorption induced via both the intra- and interband electronic transition channels in the perpendicular $xx$ and $yy$ directions. Furthermore, we examine the effects of the ellipticity ratio, the temperature, the carrier density, and the band-gap parameter on the optical conductivity of the 2D SD system placed in transverse and vertical directions, respectively. It is shown that the ellipticity ratio, temperature, carrier density, and band-gap parameter can play the important roles in tuning the strength, peak position, and shape of the optical conductivity spectrum. The results obtained from this study indicate that the 2D SD system can be a promising anisotropic and tunable optical and optoelectronic material for applications in innovative 2D optical and optoelectronic devices, which are active in the infrared and terahertz bandwidths.
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Submitted 20 March, 2022;
originally announced March 2022.
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Strong anisotropic optical properties of 8-Pmmn borophene: a many-body perturbation study
Authors:
N. Deily Nazar,
T. Vazifehshenas,
M. R. Ebrahimi,
F. M. Peeters
Abstract:
Using first-principle many-body perturbation theory, we investigate the optical properties of 8- borophene at two levels of approximations; the GW method considering only the electron-electron interaction and the GW in combination with the Bethe-Salpeter equation including electron-hole coupling. The band structure exhibits anisotropic Dirac cones with semimetallic character. The optical absorptio…
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Using first-principle many-body perturbation theory, we investigate the optical properties of 8- borophene at two levels of approximations; the GW method considering only the electron-electron interaction and the GW in combination with the Bethe-Salpeter equation including electron-hole coupling. The band structure exhibits anisotropic Dirac cones with semimetallic character. The optical absorption spectra are obtained for different light polarizations and we predict strong optical absorbance anisotropy. The absorption peaks undergo a global redshift when the electron-hole interaction is taken into account due to the formation of bound excitons which have an anisotropic excitonic wave function.
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Submitted 6 January, 2022;
originally announced January 2022.
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Pivotal role of magnetic ordering and strain in lattice thermal conductivity of chromium-trihalide monolayers
Authors:
T. Pandey,
F. M. Peeters,
M. V. Milovsevic
Abstract:
Understanding the coupling between spin and phonons is critical for controlling the lattice thermal conductivity ($κ_l$) in magnetic materials, as we demonstrate here for CrX$_3$ (X = Br and I) monolayers. We show that these compounds exhibit large spin-phonon coupling (SPC), dominated by out-of-plane vibrations of Cr atoms, resulting in significantly different phonon dispersions in ferromagnetic…
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Understanding the coupling between spin and phonons is critical for controlling the lattice thermal conductivity ($κ_l$) in magnetic materials, as we demonstrate here for CrX$_3$ (X = Br and I) monolayers. We show that these compounds exhibit large spin-phonon coupling (SPC), dominated by out-of-plane vibrations of Cr atoms, resulting in significantly different phonon dispersions in ferromagnetic (FM) and paramagnetic (PM) phases. Lattice thermal conductivity calculations provide additional evidence for strong SPC, where particularly large $κ_l$ is found for the FM phase. Most strikingly, PM and FM phases exhibit radically different behavior with tensile strain, where $κ_l$ increases with strain for the PM phase, and strongly decreases for the FM phase -- as we explain through analysis of phonon lifetimes and scattering rates. Taken all together, we uncover the very high significance of SPC on the phonon transport in CrX$_3$ monolayers, a result extendable to other 2D magnetic materials, that will be useful in further design of thermal spin devices.
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Submitted 9 December, 2021;
originally announced December 2021.
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Stability of adsorption of Mg and Na on sulfur-functionalized MXenes
Authors:
G. Chaney,
D. Çakır,
F. M. Peeters,
C. Ataca
Abstract:
Two-dimensional materials composed of transition metal carbides and nitrides (MXenes) are poised to revolutionize energy conversion and storage. In this work, we used density functional theory (DFT) to investigate adsorption of Mg and Na adatoms on five M$_{2}$CS$_{2}$ monolayers (where M= Mo, Nb, Ti, V, Zr) for battery applications. We assessed the stability of the adatom (i.e. Na and Mg)-monolay…
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Two-dimensional materials composed of transition metal carbides and nitrides (MXenes) are poised to revolutionize energy conversion and storage. In this work, we used density functional theory (DFT) to investigate adsorption of Mg and Na adatoms on five M$_{2}$CS$_{2}$ monolayers (where M= Mo, Nb, Ti, V, Zr) for battery applications. We assessed the stability of the adatom (i.e. Na and Mg)-monolayer systems by calculating adsorption and formation energies, as well as voltages as a function of surface coverage. For instance, we found that Mo$_{2}$CS$_{2}$ cannot support a full layer of Na nor even a single Mg atom. Na and Mg exhibit the strongest binding on Zr$_{2}$CS$_{2}$, followed by Ti$_{2}$CS$_{2}$, Nb$_{2}$CS$_{2}$ and V$_{2}$CS$_{2}$. Using the nudged elastic band method (NEB) we computed promising diffusion barriers for both dilute and nearly-full ion surface coverage cases. In the dilute ion adsorption case, a single Mg and Na atom on Ti$_{2}$CS$_{2}$ experience $\sim$0.47 eV and $\sim$0.10 eV diffusion barriers between the lowest energy sites, respectively. For a nearly full surface coverage, a Na ion moving on Ti$_{2}$CS$_{2}$ experiences a $\sim$0.33 eV energy barrier, implying a concentration dependent diffusion barrier. Our molecular dynamics results indicate that three (one) layers (layer) of Mg (Na) ion on both surfaces of Ti$_{2}$CS$_{2}$ remain stable at T=300 K. While, according to voltage calculations, Zr$_{2}$CS$_{2}$ can store Na up to three atomic layers, our MD simulations predict that the outermost layers detach from Zr$_{2}$CS$_{2}$ monolayer due to weak interaction between Na ions and the monolayer. This suggests that MD simulations are essential to confirming the stability of an ion-electrode system - an insight that is mostly absence in previous studies.
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Submitted 20 October, 2021;
originally announced October 2021.
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Al$_2$B$_2$ and AlB$_4$ monolayers: emergence of multiple two-dimensional Dirac nodal line semimetals with novel properties
Authors:
Saeid Abedi,
Esmaeil Taghizadeh Sisakht,
S. Javad Hashemifar,
Nima Ghafari Cherati,
Ismaeil Abdolhosseini Sarsari,
Francois M. Peeters
Abstract:
Topological semimetal phases in two-dimensional (2D) materials have gained widespread interest due to their potential applications in developing nanoscale devices. Despite the prediction of the Dirac/Weyl points in a wide variety of 2D candidates, materials featuring topological nodal lines are still in great scarcity. Herein, we predict two stable thinnest films of aluminum diboride with hyper- a…
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Topological semimetal phases in two-dimensional (2D) materials have gained widespread interest due to their potential applications in developing nanoscale devices. Despite the prediction of the Dirac/Weyl points in a wide variety of 2D candidates, materials featuring topological nodal lines are still in great scarcity. Herein, we predict two stable thinnest films of aluminum diboride with hyper- and hypo-stoichiometries of Al$_2$B$_2$ and AlB$_4$ as new 2D nonmagnetic Dirac nodal line semimetals (NLSMs) which promise to offer many novel features. Our elaborate electronic structure calculations combined with analytical studies reveal that, in addition to the multiple Dirac points, these 2D configurations host various type-I closed nodal lines (NLs) around the Fermi level, all of which are semimetal states protected by the time-reversal and in-plane mirror symmetries. The most intriguing NL in Al$_2$B$_2$ encloses the K point and crosses the Fermi level with a considerable dispersion, thus providing a fresh playground to explore exotic properties in dispersive Dirac nodal lines. More strikingly, in the case of 2D superconductor AlB$_4$ which exhibits a high transition temperature, we provide the first evidence for a set of 2D nonmagnetic open type-II NLs in weak spin-orbit coupling limit, coinciding with closed type-I NLs near the Fermi level. The coexistence of superconductivity and nontrivial band topology in AlB$_4$ not only makes it a promising material to exhibit novel topological superconducting phases, but also the rather large energy dispersion of type-II nodal lines in this configuration, may offer a distinguished platform for realization of novel topological features in two-dimensional limit.
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Submitted 18 October, 2021;
originally announced October 2021.
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Infrared to terahertz optical conductivity of $n$-type and $p$-type monolayer MoS$_2$ in the presence of Rashba spin-orbit coupling
Authors:
Y. M. Xiao,
W. Xu,
B. Van Duppen,
F. M. Peeters
Abstract:
We investigate the effect of Rashba spin-orbit coupling (SOC) on the optoelectronic properties of n- and p-type monolayer MoS2. The optical conductivity is calculated within the Kubo formalism. We find that the spin-flip transitions enabled by the Rashba SOC result in a wide absorption window in the optical spectrum. Furthermore, we evaluate the effects of the polarization direction of the radiati…
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We investigate the effect of Rashba spin-orbit coupling (SOC) on the optoelectronic properties of n- and p-type monolayer MoS2. The optical conductivity is calculated within the Kubo formalism. We find that the spin-flip transitions enabled by the Rashba SOC result in a wide absorption window in the optical spectrum. Furthermore, we evaluate the effects of the polarization direction of the radiation, temperature, carrier density, and the strength of the Rashba spin-orbit parameter on the optical conductivity. We find that the position, width, and shape of the absorption peak or absorption window can be tuned by varying these parameters. This study shows that monolayer MoS2 can be a promising tunable optical and optoelectronic material that is active in the infrared to terahertz spectral range.
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Submitted 16 September, 2021;
originally announced September 2021.
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Terahertz magneto-optical properties of graphene hydrodynamic electron liquid
Authors:
L. F. Man,
W. Xu,
Y. M. Xiao,
H. Wen,
L. Ding,
B. Van Duppen,
F. M. Peeters
Abstract:
The discovery of the hydrodynamic electron liquid (HEL) in graphene [D. Bandurin \emph{et al.}, Science {\bf 351}, 1055 (2016) and J. Crossno \emph{et al.}, Science {\bf 351}, 1058 (2016)] has marked the birth of the solid-state HEL which can be probed near room temperature in a table-top setup. Here we examine the terahertz (THz) magneto-optical (MO) properties of a graphene HEL. Considering the…
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The discovery of the hydrodynamic electron liquid (HEL) in graphene [D. Bandurin \emph{et al.}, Science {\bf 351}, 1055 (2016) and J. Crossno \emph{et al.}, Science {\bf 351}, 1058 (2016)] has marked the birth of the solid-state HEL which can be probed near room temperature in a table-top setup. Here we examine the terahertz (THz) magneto-optical (MO) properties of a graphene HEL. Considering the case where the magnetic length $l_B=\sqrt{\hbar/eB}$ is comparable to the mean-free path $l_{ee}$ for electron-electron interaction in graphene, the MO conductivities are obtained by taking a momentum balance equation approach on the basis of the Boltzmann equation. We find that when $l_B\sim l_{ee}$, the viscous effect in a HEL can weaken significantly the THz MO effects such as cyclotron resonance and Faraday rotation. The upper hybrid and cyclotron resonance magnetoplasmon modes $ω_\pm$ are also obtained through the RPA dielectric function. The magnetoplasmons of graphene HEL at large wave-vector regime are affected by the viscous effect, and results in red-shifts of the magnetoplasmon frequencies. We predict that the viscosity in graphene HEL can affect strongly the magneto-optical and magnetoplasmonic properties, which can be verified experimentally.
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Submitted 15 September, 2021;
originally announced September 2021.
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Tunable coupling of terahertz Dirac plasmons and phonons in transition metal dicalchogenide-based van der Waals heterostructures
Authors:
I. R. Lavor,
Andrey Chaves,
F. M. Peeters,
B. Van Duppen
Abstract:
Dirac plasmons in graphene hybridize with phonons of transition metal dichalcogenides (TMDs) when the materials are combined in so-called van der Waals heterostructures (vdWh), thus forming surface plasmon-phonon polaritons (SPPPs). The extend to which these modes are coupled depends on the TMD composition and structure, but also on the plasmons' properties. By performing realistic simulations tha…
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Dirac plasmons in graphene hybridize with phonons of transition metal dichalcogenides (TMDs) when the materials are combined in so-called van der Waals heterostructures (vdWh), thus forming surface plasmon-phonon polaritons (SPPPs). The extend to which these modes are coupled depends on the TMD composition and structure, but also on the plasmons' properties. By performing realistic simulations that account for the contribution of each layer of the vdWh separately, we calculate how the strength of plasmon-phonon coupling depends on the number and composition of TMD layers, on the graphene Fermi energy and the specific phonon mode. From this, we present a semiclassical theory that is capable of capturing all relevant characteristics of the SPPPs. We find that it is possible to realize both strong and ultra-strong coupling regimes by tuning graphene's Fermi energy and changing TMD layer number.
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Submitted 14 August, 2021;
originally announced August 2021.
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Ferromagnetism with in-plane magnetization, Dirac spin-gapless semiconducting property, and tunable topological states in two-dimensional rare-earth-metal dinitrides
Authors:
Yawei Yu,
Xin Chen,
Xiaobiao Liu,
Jia Li,
Biplab Sanyal,
Xiangru Kong,
François M. Peeters,
Linyang Li
Abstract:
As the bulk single-crystal MoN2/ReN2 with a layered structure was successfully synthesized in experiment, transition-metal dinitrides have attracted considerable attention in recent years. Here, we focus on rare-earth-metal (Rem) elements and propose seven stable Rem dinitride monolayers with a 1T structure, namely 1T-RemN2. These monolayers have a ferromagnetic ground state with in-plane magnetiz…
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As the bulk single-crystal MoN2/ReN2 with a layered structure was successfully synthesized in experiment, transition-metal dinitrides have attracted considerable attention in recent years. Here, we focus on rare-earth-metal (Rem) elements and propose seven stable Rem dinitride monolayers with a 1T structure, namely 1T-RemN2. These monolayers have a ferromagnetic ground state with in-plane magnetization. Without spin-orbit coupling (SOC) effect, the band structures are spin-polarized with Dirac points at the Fermi level. Remarkably, the 1T-LuN2 monolayer shows an isotropic magnetic anisotropy energy in the xy-plane with in-plane magnetization, indicating easy tunability of the magnetization direction. When rotating the magnetization vector in the xy-plane, our proposed model can accurately describe the variety of the SOC band gap and two topological states (Weyl-like semimetal and Chern insulator states) appear with tunable properties. The Weyl-like semimetal state is a critical point between the two Chern insulator states with opposite sign of the Chern numbers. The large nontrivial band gap (up to 60.3 meV) and the Weyl-like semimetal state are promising for applications in spintronic devices.
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Submitted 28 July, 2021;
originally announced July 2021.
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Ion exchange in atomically thin clays and micas
Authors:
Yi-Chao Zou,
Lucas Mogg,
Nick Clark,
Cihan Bacaksiz,
Slavisa Milanovic,
Vishnu Sreepal,
Guang-Ping Hao,
Yi-Chi Wang,
David G. Hopkinson,
Roman Gorbachev,
Samuel Shaw,
Kostya S. Novoselov,
Rahul Raveendran-Nair,
Francois M. Peeters,
Marcelo Lozada-Hidalgo,
Sarah J. Haigh
Abstract:
Clays and micas are receiving attention as materials that, in their atomically thin form, could allow for novel proton conductive, ion selective, osmotic power generation, or solvent filtration membranes. The interest arises from the possibility of controlling their properties by exchanging ions in the crystal lattice. However, the ion exchange process itself remains largely unexplored in atomical…
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Clays and micas are receiving attention as materials that, in their atomically thin form, could allow for novel proton conductive, ion selective, osmotic power generation, or solvent filtration membranes. The interest arises from the possibility of controlling their properties by exchanging ions in the crystal lattice. However, the ion exchange process itself remains largely unexplored in atomically thin materials. Here we use atomic-resolution scanning transmission electron microscopy to study the dynamics of the process and reveal the binding sites of individual ions in atomically thin and artificially restacked clays and micas. Imaging ion exchange after different exposure time and for different crystal thicknesses, we find that the ion diffusion constant, D, for the interlayer space of atomically thin samples is up to 10^4 times larger than in bulk crystals and approaches its value in free water. Surprisingly, samples where no bulk exchange is expected display fast exchange if the mica layers are twisted and restacked; but in this case, the exchanged ions arrange in islands controlled by the moiré superlattice dimensions. We attribute the fast ion diffusion to enhanced interlayer expandability resulting from weaker interlayer binding forces in both atomically thin and restacked materials. Finally, we demonstrate images of individual surface cations for these materials, which had remained elusive in previous studies. This work provides atomic scale insights into ion diffusion in highly confined spaces and suggests strategies to design novel exfoliated clays membranes.
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Submitted 14 July, 2021;
originally announced July 2021.
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Zitterbewegung of moiré excitons in twisted MoS$_2$/WSe$_2$ hetero-bilayers
Authors:
I. R. Lavor,
D. R. da Costa,
L. Covaci,
M. V. Milošević,
F. M. Peeters,
A. Chaves
Abstract:
The moiré pattern observed in stacked non-commensurate crystal lattices, such as hetero-bilayers of transition metal dichalcogenides, produces a periodic modulation of their bandgap. Excitons subjected to this potential landscape exhibit a band structure that gives rise to a quasi-particle dubbed moiré exciton. In the case of MoS$_2$/WSe$_2$ hetero-bilayers, the moiré trapping potential has honeyc…
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The moiré pattern observed in stacked non-commensurate crystal lattices, such as hetero-bilayers of transition metal dichalcogenides, produces a periodic modulation of their bandgap. Excitons subjected to this potential landscape exhibit a band structure that gives rise to a quasi-particle dubbed moiré exciton. In the case of MoS$_2$/WSe$_2$ hetero-bilayers, the moiré trapping potential has honeycomb symmetry and, consequently, the moiré exciton band structure is the same as that of a Dirac-Weyl fermion, whose mass can be further tuned down to zero with a perpendicularly applied field. Here we show that, analogously to other Dirac-like particles, moiré exciton exhibits a trembling motion, also known as zitterbewegung, whose long timescales are compatible with current experimental techniques for exciton dynamics. This promotes the study of the dynamics of moiré excitons in van der Waals heterostructures as an advantageous solid-state platform to probe zitterbewegung, broadly tunable by gating and inter-layer twist angle.
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Submitted 30 June, 2021;
originally announced July 2021.
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Isolated and hybrid bilayer graphene rings
Authors:
M. Mirzakhani,
D. R. da Costa,
F. M. Peeters
Abstract:
Using the continuum model, we investigate the electronic properties of two types of bilayer graphene (BLG) quantum ring (QR) geometries: (i) an isolated BLG QR and (ii) a monolayer graphene (MLG) with a QR put on top of an infinite graphene sheet (hybrid BLG QR). Solving the Dirac-Weyl equation in the presence of a perpendicular magnetic field and applying the infinite-mass boundary condition at t…
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Using the continuum model, we investigate the electronic properties of two types of bilayer graphene (BLG) quantum ring (QR) geometries: (i) an isolated BLG QR and (ii) a monolayer graphene (MLG) with a QR put on top of an infinite graphene sheet (hybrid BLG QR). Solving the Dirac-Weyl equation in the presence of a perpendicular magnetic field and applying the infinite-mass boundary condition at the ring boundaries, we obtain analytical results for the energy levels and corresponding wave spinors for both structures. In the case of isolated BLG QR, we observe a sizeable and magnetically tunable band gap which agrees with the tight-binding transport simulations. Our analytical results also show the intervalley symmetry $ E^K_e (m) = -E^{K'}_h(m) $ between the electron (e) and hole (h) states ($ m $ being the angular momentum quantum number) for the energy spectrum of the isolated BLG QR. The presence of interface boundary in a hybrid BLG QR modifies drastically the energy levels as compared to that of an isolated BLG QR. Its energy levels are tunable from MLG dot, to isolated BLG QR, and to MLG Landau energy levels as magnetic field is varied. Our predictions can be verified experimentally using different techniques such as by magnetotransport measurements.
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Submitted 18 March, 2022; v1 submitted 2 June, 2021;
originally announced June 2021.
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Tunable effective masses of magneto-excitons in two-dimensional materials
Authors:
Andrey Chaves,
F. M. Peeters
Abstract:
Excitonic properties of Ge$_2$H$_2$ and Sn$_2$H$_2$, also known as Xanes, are investigated within the effective mass model. A perpendicularly applied magnetic field induces a negative shift on the exciton center-of-mass kinetic energy that is approximately quadratic with its momentum, thus pushing down the exciton dispersion curve and flattening it. This can be interpreted as an increase in the ef…
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Excitonic properties of Ge$_2$H$_2$ and Sn$_2$H$_2$, also known as Xanes, are investigated within the effective mass model. A perpendicularly applied magnetic field induces a negative shift on the exciton center-of-mass kinetic energy that is approximately quadratic with its momentum, thus pushing down the exciton dispersion curve and flattening it. This can be interpreted as an increase in the effective mass of the magneto-exciton, tunable by the field intensity. Our results show that in low effective mass two-dimensional semiconductors, such as Xanes, the applied magnetic field allows one to tune the magneto-exciton effective mass over a wide range of values.
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Submitted 28 May, 2021;
originally announced May 2021.
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Superconducting diode effect via conformal-mapped nanoholes
Authors:
Yang-Yang Lyu,
Ji Jiang,
Yong-Lei Wang,
Zhi-Li Xiao,
Sining Dong,
Qing-Hu Chen,
Milorad V. Milošević,
Huabing Wang,
Ralu Divan,
John E. Pearson,
Peiheng Wu,
Francois M. Peeters,
Wai-Kwong Kwok
Abstract:
A superconducting diode is an electronic device that conducts supercurrent and exhibits zero resistance primarily for one direction of applied current. Such a dissipationless diode is a desirable unit for constructing electronic circuits with ultralow power consumption. However, realizing a superconducting diode is fundamentally and technologically challenging, as it usually requires a material st…
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A superconducting diode is an electronic device that conducts supercurrent and exhibits zero resistance primarily for one direction of applied current. Such a dissipationless diode is a desirable unit for constructing electronic circuits with ultralow power consumption. However, realizing a superconducting diode is fundamentally and technologically challenging, as it usually requires a material structure without a centre of inversion, which is scarce among superconducting materials. Here, we demonstrate a superconducting diode achieved in a conventional superconducting film patterned with a conformal array of nanoscale holes, which breaks the spatial inversion symmetry. We showcase the superconducting diode effect through switchable and reversible rectification signals, which can be three orders of magnitude larger than that from a flux-quantum diode. The introduction of conformal potential landscapes for creating a superconducting diode is thereby proven as a convenient, tunable, yet vastly advantageous tool for superconducting electronics. This could be readily applicable to any superconducting materials, including cuprates and iron-based superconductors that have higher transition temperatures and are desirable in device applications.
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Submitted 12 May, 2021;
originally announced May 2021.
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Coulomb impurity on a Dice lattice: atomic collapse and bound states
Authors:
Jing Wang,
R. Van Pottelberge,
Wen-Sheng Zhao,
François M. Peeters
Abstract:
The modification of the quantum states in a Dice lattice due to a Coulomb impurity are investigated. The energy band structure of a pristine Dice lattice consists of a Dirac cone and a flat band at the Dirac point. We use the tight binding formalism and find that the flat band states transform into a set of discrete bound states whose electron density is localized on a ring around the impurity mai…
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The modification of the quantum states in a Dice lattice due to a Coulomb impurity are investigated. The energy band structure of a pristine Dice lattice consists of a Dirac cone and a flat band at the Dirac point. We use the tight binding formalism and find that the flat band states transform into a set of discrete bound states whose electron density is localized on a ring around the impurity mainly on two of the three sublattices. The energy is proportional to the strength of the Coulomb impurity. Beyond a critical strength of the Coulomb potential atomic collapse states appear that have some similarity with those found in graphene with the difference that the flat band states contribute with an additional ring-like electron density that is spatially decoupled from the atomic collapse part. At large value of the strength of the Coulomb impurity the flat band bound states anti-cross with the atomic collapse states.
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Submitted 11 May, 2021;
originally announced May 2021.
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Effective Landé factors for an electrostatically defined quantum point contact in silicene
Authors:
Bartłomiej Rzeszotarski,
Alina Mreńca-Kolasińska,
François M. Peeters,
Bartłomiej Szafran
Abstract:
The transconductance and effective Landé $g^*$ factors for a quantum point contact defined in silicene by the electric field of a split gate is investigated. The strong spin-orbit coupling in buckled silicene reduces the $g^*$ factor for in-plane magnetic field from the nominal value 2 to around 1.2 for the first- to 0.45 for the third conduction subband. However, for perpendicular magnetic field…
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The transconductance and effective Landé $g^*$ factors for a quantum point contact defined in silicene by the electric field of a split gate is investigated. The strong spin-orbit coupling in buckled silicene reduces the $g^*$ factor for in-plane magnetic field from the nominal value 2 to around 1.2 for the first- to 0.45 for the third conduction subband. However, for perpendicular magnetic field we observe an enhancement of $g^*$ factors for the first subband to 5.8 in nanoribbon with zigzag and to 2.5 with armchair edge. The main contribution to the Zeeman splitting comes from the intrinsic spin-orbit coupling defined by the Kane-Mele form of interaction.
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Submitted 7 May, 2021; v1 submitted 6 May, 2021;
originally announced May 2021.
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Exponentially selective molecular sieving through angstrom pores
Authors:
P. Z. Sun,
M. Yagmurcukardes,
R. Zhang,
W. J. Kuang,
M. Lozada-Hidalgo,
B. L. Liu,
H. -M. Cheng,
F. C. Wang,
F. M. Peeters,
I. V. Grigorieva,
A. K. Geim
Abstract:
Two-dimensional crystals with angstrom-scale pores are widely considered as candidates for a next generation of molecular separation technologies aiming to provide extreme, exponentially large selectivity combined with high flow rates. No such pores have been demonstrated experimentally. Here we study gas transport through individual graphene pores created by low intensity exposure to low kV elect…
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Two-dimensional crystals with angstrom-scale pores are widely considered as candidates for a next generation of molecular separation technologies aiming to provide extreme, exponentially large selectivity combined with high flow rates. No such pores have been demonstrated experimentally. Here we study gas transport through individual graphene pores created by low intensity exposure to low kV electrons. Helium and hydrogen permeate easily through these pores whereas larger species such as xenon and methane are practically blocked. Permeating gases experience activation barriers that increase quadratically with molecules' kinetic diameter, and the effective diameter of the created pores is estimated as ~2 angstroms, about one missing carbon ring. Our work reveals stringent conditions for achieving the long sought-after exponential selectivity using porous two-dimensional membranes and suggests limits on their possible performance.
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Submitted 9 December, 2021; v1 submitted 6 April, 2021;
originally announced April 2021.
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Confinement and edge effects on atomic collapse in graphene nanoribbons
Authors:
Jing Wang,
Robbe Van Pottelberge,
Amber Jacobs,
Ben Van Duppen,
Francois M. Peeters
Abstract:
Atomic collapse in graphene nanoribbons behaves in a fundamentally different way as compared to monolayer graphene, due to the presence of multiple energy bands and the effect of edges. For armchair nanoribbons we find that bound states gradually transform into atomic collapse states with increasing impurity charge. This is very different in zig-zag nanoribbons where multiple quasi-one-dimensional…
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Atomic collapse in graphene nanoribbons behaves in a fundamentally different way as compared to monolayer graphene, due to the presence of multiple energy bands and the effect of edges. For armchair nanoribbons we find that bound states gradually transform into atomic collapse states with increasing impurity charge. This is very different in zig-zag nanoribbons where multiple quasi-one-dimensional \emph{bound states} are found that originates from the zero energy zig-zag edge states. They are a consequence of the flat band and the electron distribution of these bound states exhibits two peaks. The lowest energy edge state transforms from a bound state into an atomic collapse resonance and shows a distinct relocalization from the edge to the impurity position with increasing impurity charge.
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Submitted 19 January, 2021;
originally announced January 2021.
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Reversible ratchet effects in a narrow superconducting ring
Authors:
Ji Jiang,
Yong-Lei Wang,
M. V. Milošević,
Zhi-Li Xiao,
F. M. Peeters,
Qing-Hu Chen
Abstract:
We study the ratchet effect in a narrow pinning-free superconductive ring based on time-dependent Ginzburg-Landau (TDGL) equations. Voltage responses to external dc an ac currents at various magnetic fields are studied. Due to asymmetric barriers for flux penetration and flux exit in the ring-shaped superconductor, the critical current above which the flux-flow state is reached, as well as the cri…
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We study the ratchet effect in a narrow pinning-free superconductive ring based on time-dependent Ginzburg-Landau (TDGL) equations. Voltage responses to external dc an ac currents at various magnetic fields are studied. Due to asymmetric barriers for flux penetration and flux exit in the ring-shaped superconductor, the critical current above which the flux-flow state is reached, as well as the critical current for the transition to the normal state, are different for the two directions of applied current. These effects cooperatively cause ratchet signal reversal at high magnetic fields, which has not been reported to date in a pinning-free system. The ratchet signal found here is larger than those induced by asymmetric pinning potentials. Our results also demonstrate the feasibility of using mesoscopic superconductors to employ superconducting diode effect in versatile superconducting devices.
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Submitted 6 January, 2021;
originally announced January 2021.
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Electron-hole superfluidity in strained Si/Ge type II heterojunctions
Authors:
Sara Conti,
Samira Saberi Pouya,
Andrea Perali,
Michele Virgilio,
Francois M. Peeters,
Alexander R. Hamilton,
Giordano Scappucci,
David Neilson
Abstract:
Excitons are promising candidates for generating superfluidity and Bose-Einstein Condensation (BEC) in solid state devices, but an enabling material platform with in-built bandstructure advantages and scaling compatibility with industrial semiconductor technology is lacking. Here we predict that spatially indirect excitons in a lattice-matched strained Si/Ge bilayer embedded into a germanium-rich…
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Excitons are promising candidates for generating superfluidity and Bose-Einstein Condensation (BEC) in solid state devices, but an enabling material platform with in-built bandstructure advantages and scaling compatibility with industrial semiconductor technology is lacking. Here we predict that spatially indirect excitons in a lattice-matched strained Si/Ge bilayer embedded into a germanium-rich SiGe crystal, would lead to observable mass-imbalanced electron-hole superfluidity and BEC. Holes would be confined in a compressively strained Ge quantum well and electrons in a lattice-matched tensile strained Si quantum well. We envision a device architecture that does not require an insulating barrier at the Si/Ge interface, since this interface offers a type II band alignment. Thus the electrons and holes can be kept very close but strictly separate, strengthening the electron-hole pairing attraction while preventing fast electron-hole recombination. The band alignment also allows a one-step procedure for making independent contacts to the electron and hole layers, overcoming a significant obstacle to device fabrication. We predict superfluidity at experimentally accessible temperatures of a few Kelvin and carrier densities up to $\sim 6\times 10^{10}$ cm$^{-2}$, while the large imbalance of the electron and hole effective masses can lead to exotic superfluid phases.
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Submitted 14 December, 2020; v1 submitted 10 December, 2020;
originally announced December 2020.
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Prevalence of oxygen defects in an in-plane anisotropic transition metal dichalcogenide
Authors:
Ryan Plumadore,
Mehmet Baskurt,
Justin Boddison-Chouinard,
Gregory Lopinski,
Mohsen Modaresi,
Pawel Potasz,
Pawel Hawrylak,
Hasan Sahin,
Francois M. Peeters,
Adina Luican-Mayer
Abstract:
Atomic scale defects in semiconductors enable their technological applications and realization of novel quantum states. Using scanning tunneling microscopy and spectroscopy complemented by ab-initio calculations we determine the nature of defects in the anisotropic van der Waals layered semiconductor ReS$_2$. We demonstrate the in-plane anisotropy of the lattice by directly visualizing chains of r…
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Atomic scale defects in semiconductors enable their technological applications and realization of novel quantum states. Using scanning tunneling microscopy and spectroscopy complemented by ab-initio calculations we determine the nature of defects in the anisotropic van der Waals layered semiconductor ReS$_2$. We demonstrate the in-plane anisotropy of the lattice by directly visualizing chains of rhenium atoms forming diamond-shaped clusters. Using scanning tunneling spectroscopy we measure the semiconducting gap in the density of states. We reveal the presence of lattice defects and by comparison of their topographic and spectroscopic signatures with ab initio calculations we determine their origin as oxygen atoms absorbed at lattice point defect sites. These results provide an atomic-scale view into the semiconducting transition metal dichalcogenides, paving the way toward understanding and engineering their properties.
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Submitted 9 October, 2020;
originally announced October 2020.