Showing 1–37 of 37 results for author: Patriarche, G

Full ab initio atomistic approach for morphology prediction of hetero-integrated crystals: A confrontation with experiments

Authors: Sreejith Pallikkara Chandrasekharan, Sofia Apergi, Chen Wei, Federico Panciera, Laurent Travers, Gilles Patriarche, Jean-Christophe Harmand, Laurent Pedesseau, Charles Cornet

Abstract: Here, we propose a comprehensive first-principle atomistic approach to predict the Wulff-Kaischew equilibrium shape of crystals heterogeneously integrated on a dissimilar material. This method uses both reconstructed surface and interface absolute energies, as determined by density functional theory, to infer the morphology and wetting properties of Volmer-Weber islands over the whole range of acc… ▽ More Here, we propose a comprehensive first-principle atomistic approach to predict the Wulff-Kaischew equilibrium shape of crystals heterogeneously integrated on a dissimilar material. This method uses both reconstructed surface and interface absolute energies, as determined by density functional theory, to infer the morphology and wetting properties of Volmer-Weber islands over the whole range of accessible chemical potentials. The predicted equilibrium shapes of GaP crystals heterogeneously grown on Si, are found to be in good agreements with experimental observations performed by Transmission Electron Microscopy. Such method provides a tool for optimization of hetero-structured, multifunctional and smart materials and devices. △ Less

Submitted 10 June, 2025; originally announced June 2025.

Comments: 20 pages, 3 figures

Quantum Coherent Transport of 1D ballistic states in second order topological insulator Bi$_4$Br$_4$

Authors: J. Lefeuvre, M. Kobayashi, G. Patriarche, N. Findling, D. Troadec, M. Ferrier, S. Guéron, H. Bouchiat, T. Sasagawa, R. Deblock

Abstract: We investigate quantum transport in micrometer-sized single crystals of Bi$_4$Br$_4$, a material predicted to be a second-order topological insulator. 1D topological states with long phase coherence times are revealed via the modulation of quantum interferences with magnetic field and gate voltage. In particular, we demonstrate the existence of Aharanov-Bohm interference between 1D ballistic state… ▽ More We investigate quantum transport in micrometer-sized single crystals of Bi$_4$Br$_4$, a material predicted to be a second-order topological insulator. 1D topological states with long phase coherence times are revealed via the modulation of quantum interferences with magnetic field and gate voltage. In particular, we demonstrate the existence of Aharanov-Bohm interference between 1D ballistic states several micrometers long, that we identify as phase-coherent hinge modes on neighbouring step edges at the crystal surface. These Aharanov-Bohm interferences are made possible by a disordered phase-coherent contact region, the existence of which is confirmed by STEM/EDX imaging of FIB lamellae. Their coherent nature modulates the transmission of the 1D edge states, leading to weak antilocalization and universal conductance fluctuations with surprisingly large characteristic fields and a strongly anisotropic behavior. These complementary experimental results provide a comprehensive, coherent description of quantum transport in Bi$_4$Br$_4$, and establishes the material as belonging to the class of second-order topological insulators with topologically protected 1D ballistic states. △ Less

Submitted 19 February, 2025; originally announced February 2025.

Comments: Main text and Supplemental material

On the importance of Ni-Au-Ga interdiffusion in the formation of a Ni-Au / p-GaN ohmic contact

Authors: Jules Duraz, Hassen Souissi, Maksym Gromovyi, David Troadec, Teo Baptiste, Nathaniel Findling, Phuong Vuong, Rajat Gujrati, Thi May Tran, Jean Paul Salvestrini, Maria Tchernycheva, Suresh Sundaram, Abdallah Ougazzaden, Gilles Patriarche, Sophie Bouchoule

Abstract: The Ni-Au-Ga interdiffusion mechanisms taking place during rapid thermal annealing (RTA) under oxygen atmosphere of a Ni-Au/p-GaN contact are investigated by high-resolution transmission electron microscopy (HR-TEM) coupled to energy dispersive X-ray spectroscopy (EDX). It is shown that oxygen-assisted, Ni diffusion to the top surface of the metallic contact through the formation of a nickel oxide… ▽ More The Ni-Au-Ga interdiffusion mechanisms taking place during rapid thermal annealing (RTA) under oxygen atmosphere of a Ni-Au/p-GaN contact are investigated by high-resolution transmission electron microscopy (HR-TEM) coupled to energy dispersive X-ray spectroscopy (EDX). It is shown that oxygen-assisted, Ni diffusion to the top surface of the metallic contact through the formation of a nickel oxide (NiOx) is accompanied by Au diffusion down to the GaN surface, and by Ga out-diffusion through the GaN/metal interface. Electrical characterizations of the contact by Transmission Line Method (TLM) show that an ohmic contact is obtained as soon as a thin, Au-Ga interfacial layer is formed, even after complete diffusion of Ni or NiOx to the top surface of the contact. Our results clarify that the presence of Ni or NiOx at the interface is not the main origin of the ohmic-like behavior in such contacts. Auto-cleaning of the interface during the interdiffusion process may play a role, but TEM-EDX analysis evidences that the creation of Ga vacancies associated to the formation of a Ga-Au interfacial layer is crucial for reducing the Schottky barrier height, and maximizing the amount of current flowing through the contact. △ Less

Submitted 10 February, 2025; v1 submitted 16 December, 2024; originally announced December 2024.

Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure

Authors: Aymen Mahmoudi, Meryem Bouaziz, Niels Chapuis, Geoffroy Kremer, Julien Chaste, Davide Romanin, Marco Pala, François Bertran, Patrick Le Fèvre, Iann C. Gerber, Gilles Patriarche, Fabrice Oehler, Xavier Wallart, Abdelkarim Ouerghi

Abstract: The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some specificities of 2D materials. Understanding and exploiting these phenomena hinge on knowing the electronic properties and the hybridization of these structures. Here… ▽ More The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some specificities of 2D materials. Understanding and exploiting these phenomena hinge on knowing the electronic properties and the hybridization of these structures. Here, we demonstrate that rhombohedral-stacked bilayer (AB stacking) can be obtained by molecular beam epitaxy growth of tungsten diselenide (WSe2) on gallium phosphide (GaP) substrate. We confirm the presence of 3R-stacking of the WSe2 bilayer structure using scanning transmission electron microscopy (STEM) and micro-Raman spectroscopy. Also, we report high-resolution angle-resolved photoemission spectroscopy (ARPES) on our rhombohedral-stacked WSe2 bilayer grown on GaP(111)B substrate. Our ARPES measurements confirm the expected valence band structure of WSe2 with the band maximum located at the gamma point of the Brillouin zone. The epitaxial growth of WSe2 on GaP(111)B heterostructures paves the way for further studies of the fundamental properties of these complex materials, as well as prospects for their implementation in devices to exploit their promising electronic and optical properties. △ Less

Submitted 9 October, 2023; originally announced October 2023.

Comments: 5 figures

Highly photostable Zn-treated halide perovskite nanocrystals for efficient single photon generation

Authors: Marianna D'Amato, Lucien Belzane, Corentin Dabard, Mathieu Silly, Gilles Patriarche, Quentin Glorieux, Hanna Le Jeannic, Emmanuel Lhuillier, Alberto Bramati

Abstract: Achieving pure single-photon emission is essential for a range of quantum technologies, from optical quantum computing to quantum key distribution to quantum metrology. Among solid-state quantum emitters, colloidal lead halide perovskite (LHP) nanocrystals (NCs) have garnered significant attention due to their interesting structural and optical properties, which make them appealing single-photon s… ▽ More Achieving pure single-photon emission is essential for a range of quantum technologies, from optical quantum computing to quantum key distribution to quantum metrology. Among solid-state quantum emitters, colloidal lead halide perovskite (LHP) nanocrystals (NCs) have garnered significant attention due to their interesting structural and optical properties, which make them appealing single-photon sources (SPSs). However, their practical utilization for quantum technology applications has been hampered by environment-induced instabilities. In this study, we fabricate and characterize in a systematic manner Zn-treated $CsPbBr_3$ colloidal NCs obtained through $Zn^{2+}$ ion doping at the Pb-site, demonstrating improved stability under dilution and illumination. These doped NCs exhibit high single-photon purity, reduced blinking on a sub-millisecond timescale and stability of the bright state for excitation powers well above the saturation levels. Our findings highlight the potential of this synthesis approach to optimize the performance of LHP-based SPSs, opening up interesting prospects for their integration into nanophotonic systems for quantum technology applications. △ Less

Submitted 29 July, 2023; originally announced July 2023.

Spin-momentum locking and ultrafast spin-charge conversion in ultrathin epitaxial Bi$_{1-x}$Sb$_x$ topological insulator

Authors: E. Rongione, L. Baringthon, D. She, G. Patriarche, R. Lebrun, A. Lemaitre, M. Morassi, N. Reyren, M. Micica, J. Mangeney, J. Tignon, F. Bertran, S. Dhillon, P. Le Fevre, H. Jaffres, J. -M. George

Abstract: The helicity of 3D topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice-versa, through the Rashba-Edelstein effect. However, experimental signatures of these surface… ▽ More The helicity of 3D topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice-versa, through the Rashba-Edelstein effect. However, experimental signatures of these surface states to the spin-charge conversion are extremely difficult to disentangle from bulk state contributions. Here, we combine spin- and angle-resolved photo-emission spectroscopy, and time-resolved THz emission spectroscopy to categorically demonstrate that spin-charge conversion arises mainly from the surface state in Bi$_{1-x}$Sb$_x$ ultrathin films, down to few nanometers where confinement effects emerge. We correlate this large conversion efficiency, typically at the level of the bulk spin Hall effect from heavy metals, to the complex Fermi surface obtained from theoretical calculations of the inverse Rashba-Edelstein response. %We demonstrate this for film thickness down to a few nanometers, Both surface state robustness and sizeable conversion efficiency in epitaxial Bi$_{1-x}$Sb$_x$ thin films bring new perspectives for ultra-low power magnetic random-access memories and broadband THz generation. △ Less

Submitted 25 March, 2023; originally announced March 2023.

Comments: 23 pages, 3 figures

STEM analysis of deformation and B distribution in nanosecond laser ultra-doped Si$_{1-x}$ B$_x$

Authors: G. Hallais, G. Patriarche, L. Desvignes, D. Débarre, F. Chiodi

Abstract: We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser doping. We investigate the crystalline quality, deformation and B distribution profile of the doped layer by STEM analysis followed by HAADF contrast studies and GPA, and compare the results to SIMS analyses and Hall measurements. When increasing the active B concentration above 4.3 at.%, the… ▽ More We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser doping. We investigate the crystalline quality, deformation and B distribution profile of the doped layer by STEM analysis followed by HAADF contrast studies and GPA, and compare the results to SIMS analyses and Hall measurements. When increasing the active B concentration above 4.3 at.%, the fully strained, perfectly crystalline, Si:B layer starts showing dislocations and stacking faults. These only disappear around 8 at.% when the Si:B layer is well accommodated to the substrate. When increasing B incorporation, we increasingly observe small precipitates, filaments with higher active B concentration and stacking faults. At the highest concentrations studied, large precipitates form, related to the decrease of active B concentration. The structural deformation, defect type and concentration, and active B distribution are connected to the initial increase and subsequent gradual loss of superconductivity. △ Less

Submitted 30 September, 2022; v1 submitted 9 August, 2022; originally announced August 2022.

Wetting of Ga droplets in SiO$_2$/Si cavities: Application to self-assisted GaAs nanowire growth

Authors: Louis Bailly-Salins, Marco Vettori, Thomas Dursap, Philippe Regreny, Gilles Patriarche, Michel Gendry, Alexandre Danescu

Abstract: In this paper we compute and compare the surface energy of various Ga liquid droplets wetting a cylindrical cavity in various configurations. While for some of these configurations the surface energy can be computed explicitely for others numerical computation is needed. Motivated by the results obtained for the cylindrical cavities we explore the case of the more realistic situation, conical cavi… ▽ More In this paper we compute and compare the surface energy of various Ga liquid droplets wetting a cylindrical cavity in various configurations. While for some of these configurations the surface energy can be computed explicitely for others numerical computation is needed. Motivated by the results obtained for the cylindrical cavities we explore the case of the more realistic situation, conical cavities. Our results provide a relation between the geometry of the conical cavity and the equilibirum wetting angles of the droplet on the bottom and on the sidewall of the cavity which insure the dewetting of the lateral surface. This is an important result toward the control of the verticality during the nanowire growth by the vapor liquid solid method. △ Less

Submitted 20 May, 2022; originally announced May 2022.

Comments: 13 pages, 9 Figures

Defect free strain relaxation of microcrystals on mesoporous patterned silicon

Authors: Alexandre Heintz, Bouraoui Ilahi, Alexandre Pofelski, Gianluigi Botton, Gilles Patriarche, Andrea Barzaghi, Simon Fafard, Richard Arès, Giovanni Isella, Abderraouf Boucherif

Abstract: A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-established low-cost Si technology platform. Here, we demonstrate a compliant Si substrate allowing defect-free epitaxial growth of lattice mismatched materials. The method is based on the deep patt… ▽ More A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-established low-cost Si technology platform. Here, we demonstrate a compliant Si substrate allowing defect-free epitaxial growth of lattice mismatched materials. The method is based on the deep patterning of the Si substrate to form micrometer-scale pillars and subsequent electrochemical porosification. The investigation of the epitaxial Ge crystalline quality by X-ray diffraction, transmission electron microscopy and etch-pits counting demonstrates the full elastic relaxation of defect-free microcrystals. The achievement of dislocation free heteroepitaxy relies on the interplay between elastic deformation of the porous micropillars, set under stress by the lattice mismatch between Ge and Si, and on the diffusion of Ge into the mesoporous patterned substrate attenuating the mismatch strain at the Ge/Si interface. △ Less

Submitted 28 March, 2022; originally announced March 2022.

Comments: 27 pages and 4 figures along with 11 figures in supplementary information

Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths

Authors: Konstantinos Pantzas, Sylvain Combrié, Myriam Bailly, Raphaël Mandouze, Francesco Rinaldi Talenti, Abdelmounaim Harouri, Bruno Gérard, Grégoire Beaudoin, Luc Le Gratiet, Gilles Patriarche, Alfredo de Rossi, Yoan Léger, Isabelle Sagnes, Arnaud Grisard

Abstract: A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation c… ▽ More A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation configurations. The highest observed conversion efficiency is \SI{200}{\percent\per\watt\per\centi\meter\squared}, with a bandwidth of \SI{2.67}{\nano\meter} in a \SI{1}{\milli\meter}-long waveguide. The variation of the conversion efficiency with wavelength closely follows a squared cardinal sine function, in excellent agreement with theory, confirming the good uniformity of the poling period over the entire length of the waveguide. △ Less

Submitted 5 May, 2022; v1 submitted 17 March, 2022; originally announced March 2022.

Comments: 21 pages, 6 figures

Regulated dynamics with two-monolayer steps in vapor-solid-solid growth of nanowires

Authors: Edith Bellet-Amalric, Federico Panciera, Gilles Patriarche, Laurent Travers, Martien den Hertog, Jean-Christophe Harmand, Frank Glas, Joel Cibert

Abstract: The growth of ZnTe nanowires and ZnTe-CdTe nanowire heterostructures is studied by \emph{in situ} transmission electron microscopy. We describe the shape, and the change of shape, of the solid gold nanoparticle during vapor-solid-solid growth. We show the balance between one-monolayer and two-monolayer steps which characterizes the vapor-liquid-solid and vapor-solid-solid growth modes of ZnTe. We… ▽ More The growth of ZnTe nanowires and ZnTe-CdTe nanowire heterostructures is studied by \emph{in situ} transmission electron microscopy. We describe the shape, and the change of shape, of the solid gold nanoparticle during vapor-solid-solid growth. We show the balance between one-monolayer and two-monolayer steps which characterizes the vapor-liquid-solid and vapor-solid-solid growth modes of ZnTe. We discuss the role of the mismatch strain and lattice coincidence between gold and ZnTe on the predominance of two-monolayer steps during vapor-solid-solid growth, and on the subsequent self-regulation of the step dynamics. Finally, the formation of an interface between CdTe and ZnTe is described. △ Less

Submitted 13 December, 2021; originally announced December 2021.

Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring

Authors: Ali Jaffal, Philippe Regreny, Gilles Patriarche, Michel Gendry, Nicolas Chauvin

Abstract: Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs) with an elongated top-view cross-section relying on the vapor-liquid-solid method using molecular beam epitaxy. By interrupting the rotation of the sample during t… ▽ More Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs) with an elongated top-view cross-section relying on the vapor-liquid-solid method using molecular beam epitaxy. By interrupting the rotation of the sample during the radial growth sequence of the InP shell, hexagonal asymmetric (HA) NWs with long/short cross-section axes were obtained instead of the usual symmetrical shape. Polarization-resolved photoluminescence measurements have revealed a significant influence of the asymmetric shaped NWs on the InAs QD emission polarization with the photons being mainly polarized parallel to the NW long cross-section axis. A degree of linear polarization (DLP) up to 91% is obtained, being at the state of the art for the reported DLP values from QD-NWs. More importantly, the growth protocol herein is fully compatible with the current applications of HA NWs covering a wide range of devices such as polarized light emitting diodes and photodetectors. △ Less

Submitted 15 June, 2021; originally announced June 2021.

Comments: 20 pages, 7 figures

Journal ref: Nanoscale 13, 16952-16958 (2021)

Dynamic formation of spherical voids crossing linear defects

Authors: Youcef A. Bioud, Maxime Rondeau, Abderraouf Boucherif, Gilles Patriarche, Dominique Drouin, Richard Arès

Abstract: A predictive model for the evolution of porous Ge layer upon thermal treatment is reported. We represent an idealized etched dislocation core as an axially symmetric elongated hole and computed its dynamics during annealing. Numerical simulations of the shape change of a completely spherical void via surface diffusion have been performed. Simulations and experiments show individual large spherical… ▽ More A predictive model for the evolution of porous Ge layer upon thermal treatment is reported. We represent an idealized etched dislocation core as an axially symmetric elongated hole and computed its dynamics during annealing. Numerical simulations of the shape change of a completely spherical void via surface diffusion have been performed. Simulations and experiments show individual large spherical voids, aligned along the dislocation core. The creation of voids could facilitate interactions between dislocations, enabling the dislocation network to change its connectivity in a way that facilitates the subsequent annihilation of dislocation segments. This confirms that thermally activated processes such as state diffusion of porous materials provide mechanisms whereby the defects are removed or arranged in configurations of lower energy. This model is intended to be indicative, and more detailed experimental characterization of process parameters such as annealing temperature and time, and could estimate the annealing time for given temperatures, or vice versa, with the right parameters. △ Less

Submitted 7 January, 2021; originally announced January 2021.

Comments: 7 pages, 3 figures

Relaxation mechanism of GaP grown on 001 Sisubstrates: influence of defects on the growth of AlGaPlayers on GaP/Si templates

Authors: Konstantinos Pantzas, Grégoire Beaudoin, Myriam Bailly, Aude Martin, Arnaud Grisard, Daniel Dolfi, Olivia Mauguin, Ludovic Largeau, Isabelle Sagnes, Gilles Patriarche

Abstract: The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the template originally presents an excellent surfacemorphology, annealing at high enough temperatures to remove the native oxideprior to growth leads to plastic relaxation, accompanied by a variety of defects,including a dense gri… ▽ More The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the template originally presents an excellent surfacemorphology, annealing at high enough temperatures to remove the native oxideprior to growth leads to plastic relaxation, accompanied by a variety of defects,including a dense grid of micro-twins. These micro-twins detrimentally affectGaP and AlGaP layers grown subsequently on the template. △ Less

Submitted 8 January, 2021; originally announced January 2021.

Comments: 6 figures

Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region

Authors: Anas Elbaz, Riazul Arefin, Emilie Sakat, Binbin Wang, Etienne Herth, Gilles Patriarche, Antonino Foti, Razvigor Ossikovski, Sebastien Sauvage, Xavier Checoury, Konstantinos Pantzas, Isabelle Sagnes, Jérémie Chrétien, Lara Casiez, Mathieu Bertrand, Vincent Calvo, Nicolas Pauc, Alexei Chelnokov, Philippe Boucaud, Frederic Boeuf, Vincent Reboud, Jean-Michel Hartmann, Moustafa El Kurdi

Abstract: GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless su… ▽ More GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 \% to 10.5 \%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-\SI{8 }{\micro\meter} range. We evidence direct band gap in GeSn with 7 \% of Sn and lasing at 2-\SI{2.3 }{\micro\meter} wavelength under optical injection with reproducible lasing thresholds around \SI{10 }{\kilo\watt\per\square\centi\meter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources. △ Less

Submitted 21 December, 2020; originally announced December 2020.

Comments: 30 pages, 9 figures

Journal ref: ACS Photonics 2020, 7, 10, 2713-2722

Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition

Authors: James Gigliotti, Xin Li, Suresh Sundaram, Dogukan Deniz, Vladimir Prudkovskiy, Jean-Philippe Turmaud, Yiran Hu, Yue Hu, Frédéric Fossard, Jean-Sébastien Mérot, Annick Loiseau, Gilles Patriarche, Bokwon Yoon, Uzi Landman, Abdallah Ougazzaden, Claire Berger, Walt A. de Heer

Abstract: Realizing high-performance nanoelectronics requires control of materials at the nanoscale. Methods to produce high quality epitaxial graphene (EG) nanostructures on silicon carbide are known. The next step is to grow Van der Waals semiconductors on top of EG nanostructures. Hexagonal boron nitride (h-BN) is a wide bandgap semiconductor with a honeycomb lattice structure that matches that of graphe… ▽ More Realizing high-performance nanoelectronics requires control of materials at the nanoscale. Methods to produce high quality epitaxial graphene (EG) nanostructures on silicon carbide are known. The next step is to grow Van der Waals semiconductors on top of EG nanostructures. Hexagonal boron nitride (h-BN) is a wide bandgap semiconductor with a honeycomb lattice structure that matches that of graphene, making it ideally suited for graphene-based nanoelectronics. Here, we describe the preparation and characterization of multilayer h-BN grown epitaxially on EG using a migration-enhanced metalorganic vapor phase epitaxy process. As a result of the lateral epitaxial deposition (LED) mechanism, the grown h-BN/EG heterostructures have highly ordered epitaxial interfaces, as desired in order to preserve the transport properties of pristine graphene. Atomic scale structural and energetic details of the observed row-by-row, growth mechanism of the 2D epitaxial h-BN film are analyzed through first-principles simulations, demonstrating one-dimensional nucleation-free-energy-barrierless growth. This industrially relevant LED process can be applied to a wide variety of van der Waals materials. △ Less

Submitted 22 November, 2020; originally announced November 2020.

Journal ref: ACS Nano 2020, 14, 12962

Experimental quantification of atomically-resolved HAADF-STEMimages using EDX

Authors: Konstantinos Pantzas, Gilles Patriarche

Abstract: Atomically-resolved mappings of the indium composition in InGaN/GaN multi-quantum wellstructures have been obtained by quantifying the contrast in HAADF-STEM. The quantificationprocedure presented here does not rely on computation-intensive simulations, but rather uses EDXmeasurements to calibrate the HAADF-STEM contrast. The histogram of indium compositionsobtained from the mapping provides uniqu… ▽ More Atomically-resolved mappings of the indium composition in InGaN/GaN multi-quantum wellstructures have been obtained by quantifying the contrast in HAADF-STEM. The quantificationprocedure presented here does not rely on computation-intensive simulations, but rather uses EDXmeasurements to calibrate the HAADF-STEM contrast. The histogram of indium compositionsobtained from the mapping provides unique insights into the growth of InGaN: the transitionfrom GaN to InGaN and vice versa occurs in discreet increments of composition; each incrementcorresponds to one monolayer of the interface, indicating that nucleation takes longer than thelateral growth of the step. Strain-state analysis is also performed by applying Peak-Pair Analysisto the positions of the atomic columns identified the quantification of the contrast. The strainmappings yield an estimate of the composition in good agreement with the one obtained fromquantified HAADF-STEM, albeit with a lower precision. Possible improvements to increase theprecision of the strain mappings are discussed, opening potential pathways for the quantification ofarbitrary quaternary alloys at atomic scales. △ Less

Submitted 6 November, 2020; originally announced November 2020.

Comments: 9 pages, 4 figures

Journal ref: Ultramicroscopy, 220, 113152, 2021

Zinc-Blende group III-V/group IV epitaxy: importance of the miscut

Authors: C. Cornet, S. Charbonnier, I. Lucci, L. Chen, A. Letoublon, A. Alvarez, K. Tavernier, T. Rohel, R. Bernard, J. -B. Rodriguez, L. Cerutti, E. Tournie, Y. Leger, G. Patriarche, L. Largeau, A. Ponchet, P. Turban, N. Bertru

Abstract: Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given th… ▽ More Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given through the comparison of antiphase domain distributions in GaP and GaSb/AlSb samples grown on nominal and vicinal Si substrates. The antiphase domain burying step of GaP/Si samples is then observed at the atomic scale by scanning tunneling microscopy. The steps arising from the miscut allow growth rate imbalance between the two phases of the crystal and the growth conditions can deeply modify the imbalance coefficient, as illustrated with GaAs/Si. We finally explain how a monodomain III-V semiconductor configuration can be achieved even on low miscut substrates. △ Less

Submitted 15 January, 2020; originally announced January 2020.

Journal ref: Phys. Rev. Materials 4, 053401 (2020)

Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

Authors: A. Elbaz, D. Buca, N. Von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J. -M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grutzmacher, M. El Kurdi

Abstract: GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn la… ▽ More GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn layer with 5.4 at.% Sn, which is an indirect band-gap semiconductor as-grown with a compressive strain of -0.32 %, is transformed via tensile strain engineering into a truly direct band-gap semiconductor. In this approach the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. Continuous wave (cw) as well as pulsed lasing are observed at very low optical pump powers. Lasers with emission wavelength of 2.5 um have thresholds as low as 0.8kWcm^-2 for ns-pulsed excitation, and 1.1kWcm^-2 under cw excitation. These thresholds are more than two orders of magnitude lower than those previously reported for bulk GeSn lasers, approaching these values obtained for III-V lasers on Si. The present results demonstrate the feasabiliy and are the guideline for monolithically integrated Si-based laser sources on Si photonics platform. △ Less

Submitted 14 January, 2020; originally announced January 2020.

Crystal phase engineering of self-catalyzed GaAs nanowires using RHEED diagram

Authors: T. Dursap, M. Vettori, A. Danescu, C. Botella, P. Regreny, G. Patriarche, M. Gendry, J. Penuelas

Abstract: It is well known that the crystalline structure of the III-V nanowires (NWs) is mainly controlled by the wetting contact angle of the catalyst droplet which can be tuned by the III and V flux. In this work we present a method to control the wurtzite (WZ) or zinc-blende (ZB) structure in self-catalyzed GaAs NWs grown by molecular beam epitaxy, using in situ reflection high energy electron diffracti… ▽ More It is well known that the crystalline structure of the III-V nanowires (NWs) is mainly controlled by the wetting contact angle of the catalyst droplet which can be tuned by the III and V flux. In this work we present a method to control the wurtzite (WZ) or zinc-blende (ZB) structure in self-catalyzed GaAs NWs grown by molecular beam epitaxy, using in situ reflection high energy electron diffraction (RHEED) diagram analysis. Since the diffraction patterns of the ZB and WZ structures differ according to the azimuth [1-10], it is possible to follow the evolution of the intensity of specific ZB and WZ diffraction spots during the NW growth as a function of the growth parameters such as the Ga flux. By analyzing the evolution of the WZ and ZB spot intensities during some NW growths with specific changes of Ga flux, it is then possible to control the crystal structure of the NWs. ZB GaAs NWs with a controlled WZ segment have thus been realized. Using a semi-empirical model for the NW growth and our in situ RHEED measurements, the critical wetting angle of the catalyst droplet for the structural transition is deduced. △ Less

Submitted 13 December, 2019; originally announced December 2019.

Comments: 21 pages, 7 figures

Molecular-beam epitaxy of GaSb on 6{\textdegree}-offcut (001) Si using a GaAs nucleation layer

Authors: M. Rio Calvo, J-B Rodriguez, L. Cerutti, M. Ramonda, G. Patriarche, E. Tournié

Abstract: We studied and optimized the molecular beam epitaxy of GaSb layers on vicinal (001) Si substrates using a GaAs nucleation layer. An in-depth analysis of the different growth stages under optimized conditions revealed the formation of a high density of small GaAs islands forming a quasi-two-dimensional layer. GaSb then nucleated atop this layer as three-dimensional islands before turning to two-dim… ▽ More We studied and optimized the molecular beam epitaxy of GaSb layers on vicinal (001) Si substrates using a GaAs nucleation layer. An in-depth analysis of the different growth stages under optimized conditions revealed the formation of a high density of small GaAs islands forming a quasi-two-dimensional layer. GaSb then nucleated atop this layer as three-dimensional islands before turning to two-dimensional growth within a few nanometers. Moreover, reflexion high-energy electron diffraction revealed a fast relaxation of GaAs on Si and of GaSb on GaAs. The GaSb layer quality was better than that of similar layers grown on Si through AlSb nucleation layers. △ Less

Submitted 24 October, 2019; originally announced October 2019.

Journal ref: Journal of Crystal Growth, Elsevier, 2019, pp.125299

Single-electron tunneling PbS/InP neuromorphic computing building blocks

Authors: Paulo F. Jarschel, Jin H. Kim, Louis Biadala, Maxime Berthe, Yannick Lambert, Richard M. Osgood, Gilles Patriarche, Bruno Grandidier, Jimmy Xu

Abstract: We study single-electron tunneling (SET) characteristics in crystalline PbS/InP junctions, that exhibit single-electron Coulomb-blockade staircases along with memory and memory-fading behaviors. This gives rise to both short-term and long-term plasticities as well as a convenient non-linear response, making this structure attractive for neuromorphic computing applications. For further insights int… ▽ More We study single-electron tunneling (SET) characteristics in crystalline PbS/InP junctions, that exhibit single-electron Coulomb-blockade staircases along with memory and memory-fading behaviors. This gives rise to both short-term and long-term plasticities as well as a convenient non-linear response, making this structure attractive for neuromorphic computing applications. For further insights into this prospect, we predict typical behaviors relevant to the field, obtained by an extrapolation of experimental data in the SET framework. The estimated minimum energy required for a synaptic operation is in the order of 1 fJ, while the maximum frequency of operation can reach the MHz range. △ Less

Submitted 22 August, 2019; originally announced August 2019.

Comments: 9 pages, 5 figures

InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon

Authors: Ali Jaffal, Walid Redjem, Philippe Regreny, Hai Son Nguyen, Sébastien Cueff, Xavier Letartre, Gilles Patriarche, Emmanuel Rousseau, Guillaume Cassabois, Michel Gendry, Nicolas Chauvin

Abstract: Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we propose the monolithic growth of needlelike tapered InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates with a small taper angle and a nanowire diameter t… ▽ More Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we propose the monolithic growth of needlelike tapered InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates with a small taper angle and a nanowire diameter tailored to support a single mode waveguide. Such a NW geometry is obtained by a controlled balance over axial and radial growths during the gold-catalyzed growth of the NWs by molecular beam epitaxy. This allows us to investigate the impact of the taper angle on the emission properties of a single InAs/InP QD-NW. At room temperature, a Gaussian far-field emission profile in the telecom O-band with a 30° beam divergence angle is demonstrated from a single InAs QD embedded in a 2° tapered InP NW. Moreover, single photon emission is observed at cryogenic temperature for an off-resonant excitation and the best result, $g^2(0) = 0.05$, is obtained for a 7° tapered NW. This all-encompassing study paves the way for the monolithic growth on silicon of an efficient single photon source in the telecom band based on InAs/InP QD-NWs. △ Less

Submitted 26 November, 2019; v1 submitted 27 June, 2019; originally announced June 2019.

Journal ref: Nanoscale 11, 21847-21855 (2019)

Physical mechanisms involved in the formation and operation of memory devices based on a monolayer of gold nanoparticles-polythiophene hybrid materials

Authors: T. Zhang, D. Guérin, F. Alibart, D. Troadec, D. Hourlier, G. Patriarche, A. Yassin, M. Oçafrain, P. Blanchard, J. Roncali, D. Vuillaume, K. Lmimouni, S. Lenfant

Abstract: Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a major issue for better performances. Various mechanisms were suggested in vertically stacked memory structures, but the analysis remains indirect and needs destructive characterization (e.g. cross-section to access the organic layers sandwiched between el… ▽ More Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a major issue for better performances. Various mechanisms were suggested in vertically stacked memory structures, but the analysis remains indirect and needs destructive characterization (e.g. cross-section to access the organic layers sandwiched between electrodes). Here, we report a study on a planar, monolayer thick, hybrid nanoparticle/molecule device (10 nm gold nanoparticles embedded in an electro-generated poly(2-thienyl-3,4-(ethylenedioxy)thiophene) layer), combining, in situ, on the same device, physical (scanning electron microscope, physico-chemical (thermogravimetry and mass spectroscopy, Raman spectroscopy) and electrical (temperature dependent current-voltage) characterizations. We demonstrate that the forming process causes an increase in the gold particle size, almost 4 times larger than the starting nanoparticles, and that the organic layer undergoes a significant chemical rearrangement from a sp3 to sp2 amorphous carbon material. Temperature dependent electrical characterizations of this nonvolatile memory confirm that the charge transport mechanism in the device is consistent with a trap-filled space charge limited current in the off state, the sp2 amorphous carbon material containing many electrically active defects. △ Less

Submitted 29 May, 2019; originally announced May 2019.

Journal ref: Nanoscale Adv., 2019,1, 2718-2726

A universal description of III-V/Si epitaxial growth processes

Authors: I. Lucci, S. Charbonnier, L. Pedesseau, M. Vallet, L. Cerutti, J. -B. Rodriguez, E. Tournie, R. Bernard, A. Letoublon, N. Bertru, A. Le Corre, S. Rennesson, F. Semond, G. Patriarche, L. Largeau, P. Turban, A. Ponchet, C. Cornet

Abstract: Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations a… ▽ More Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations are found to be prominent over strain relief processes. We finally propose a general and unified description of III-V/Si growth processes, including the description of antiphase boundaries formation. △ Less

Submitted 6 April, 2018; originally announced April 2018.

Comments: includes the manuscript file and the supplemental materials

Journal ref: Phys. Rev. Materials 2, 060401 (2018)

Interplay between tightly focused excitation and ballistic propagation of polariton condensates in a ZnO microcavity

Authors: Rereao Hahe, Christelle Brimont, Pierre Valvin, Thierry Guillet, Feng Li, Mathieu Leroux, Jesus Zuniga-Perez, Xavier Lafosse, Gilles Patriarche, Sophie Bouchoule

Abstract: The formation and propagation of a polariton condensate under tightly focused excitation is investigated in a ZnO microcavity both experimentally and theoretically. 2D near-field and far-field images of the condensate are measured under quasi-continuous non-resonant excitation. The corresponding spatial profiles are compared to a model based on the Gross-Pitaevskii equation under cylindrical geome… ▽ More The formation and propagation of a polariton condensate under tightly focused excitation is investigated in a ZnO microcavity both experimentally and theoretically. 2D near-field and far-field images of the condensate are measured under quasi-continuous non-resonant excitation. The corresponding spatial profiles are compared to a model based on the Gross-Pitaevskii equation under cylindrical geometry. This work allows to connect the experiments performed with a small excitation laser spot and the previous kinetic models of condensation in a 2D infinite microcavity, and to determine the relevant parameters of both the interaction and the relaxation between the reservoir and the condensate. Two main parameters are identified: the exciton-photon detuning through the polariton effective mass and the temperature, which determines the efficiency of the relaxation from the reservoir to the condensate. △ Less

Submitted 5 January, 2016; v1 submitted 22 October, 2015; originally announced October 2015.

Comments: 13 pages, 3 tables and 9 figures

Journal ref: Phys. Rev. B 92, 235308 (2015)

Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics

Authors: Renaud Puybaret, Gilles Patriarche, Matthew B. Jordan, Suresh Sundaram, Youssef El Gmili, Jean-Paul Salvestrini, Paul L. Voss, Walt A. de Heer, Claire Berger, Abdallah Ougazzaden

Abstract: We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defective crystals in the heteroepitaxial growth of nitrides, and the high mobility graphene film can readily provide the back low-dissipative electrode in GaN-… ▽ More We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defective crystals in the heteroepitaxial growth of nitrides, and the high mobility graphene film can readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. The process consists in first growing a 5-8 graphene layers film on the C-face of 4H- SiC by confinement-controlled sublimation of silicon carbide. The graphene film is then patterned and arrays of 75-nanometer-wide openings are etched in graphene revealing the SiC substrate. 30-nanometer-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in openings patterned through graphene, with no nucleation on graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal hexagonal wurtzite. The GaN crystalline nanomesas have no threading dislocations, and do not show any V-pit. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene / silicon carbide platform. △ Less

Submitted 15 October, 2015; originally announced October 2015.

Comments: 7 pages, 5 figures

Conductance statistics from a large array of sub-10 nm molecular junctions

Authors: Kacem Smaali, Nicolas Clement, Gilles Patriarche, Dominique Vuillaume

Abstract: Devices made of few molecules constitute the miniaturization limit that both inorganic and organic-based electronics aspire to reach. However, integration of millions of molecular junctions with less than 100 molecules each has been a long technological challenge requiring well controlled nanometric electrodes. Here we report molecular junctions fabricated on a large array of sub-10 nm single crys… ▽ More Devices made of few molecules constitute the miniaturization limit that both inorganic and organic-based electronics aspire to reach. However, integration of millions of molecular junctions with less than 100 molecules each has been a long technological challenge requiring well controlled nanometric electrodes. Here we report molecular junctions fabricated on a large array of sub-10 nm single crystal Au nanodots electrodes, a new approach that allows us to measure the conductance of up to a million of junctions in a single conducting Atomic Force Microscope (C-AFM) image. We observe two peaks of conductance for alkylthiol molecules. Tunneling decay constant (beta) for alkanethiols, is in the same range as previous studies. Energy position of molecular orbitals, obtained by transient voltage spectroscopy, varies from peak to peak, in correlation with conductance values. △ Less

Submitted 26 May, 2012; originally announced May 2012.

Comments: ACS Nano (in press)

Journal ref: ACS Nano 6, 4639-4647 (2012)

Large array of sub-10 nm single-grain Au nanodots for use in nanotechnology

Authors: N. Clement, G. Patriarche, K. Smaali, F. Vaurette, K. Nishiguchi, D. Troadec, A. Fujiwara, D. Vuillaume

Abstract: A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin SiO2 layer. These findings are based on physical measurements, such as atomic force microscopy (AFM), atomic resolution scanning transmission electron microsco… ▽ More A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin SiO2 layer. These findings are based on physical measurements, such as atomic force microscopy (AFM), atomic resolution scanning transmission electron microscopy, and chemical techniques using energy dispersive x-ray spectroscopy. A self-assembled organic monolayer is grafted on the nanodots and characterized chemically with nanometric lateral resolution. We use the extended uniform array of nanodots as a new test-bed for molecular electronics devices. △ Less

Submitted 22 June, 2011; originally announced June 2011.

Comments: In press. One file, including the manuscript and supplementary information

Journal ref: SMALL 7 (18) pp. 2607-2613 (2011)

Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires

Authors: Damien Lucot, Fauzia Jabeen, Jean-Christophe Harmand, Gilles Patriarche, Romain Giraud, Giancarlo Faini, Dominique Mailly

Abstract: We present an original approach to fabricate single GaAs/AlGaAs core-shell nanowire with robust and reproducible transport properties. The core-shell structure is buried in an insulating GaAs overlayer and connected as grown in a two probe set-up using the highly doped growth substrate and a top diffused contact. The measured conductance shows a non-ohmic behavior with temperature and voltage-bias… ▽ More We present an original approach to fabricate single GaAs/AlGaAs core-shell nanowire with robust and reproducible transport properties. The core-shell structure is buried in an insulating GaAs overlayer and connected as grown in a two probe set-up using the highly doped growth substrate and a top diffused contact. The measured conductance shows a non-ohmic behavior with temperature and voltage-bias dependences following power laws, as expected for a quasi-1D system. △ Less

Submitted 2 January, 2011; originally announced January 2011.

Quantum well infrared photodetectors hardiness to the non ideality of the energy band profile

Authors: Emmanuel Lhuillier, Nicolas Pere-Laperne, Isabelle Ribet-Mohamed, Emmanuel Rosencher, Gilles Patriarche, Amandine Buffaz, Vincent Berger, Alexandru Nedelcu, Mathieu Carras

Abstract: We report results on the effect of a non-sharp and disordered potential in Quantum Well Infrared Photodetectors (QWIP). Scanning electronic transmission microscopy is used to measure the alloy profile of the structure which is shown to present a gradient of composition along the growth axis. Those measurements are used as inputs to quantify the effect on the detector performance (peak wavelength… ▽ More We report results on the effect of a non-sharp and disordered potential in Quantum Well Infrared Photodetectors (QWIP). Scanning electronic transmission microscopy is used to measure the alloy profile of the structure which is shown to present a gradient of composition along the growth axis. Those measurements are used as inputs to quantify the effect on the detector performance (peak wavelength, spectral broadening and dark current). The influence of the random positioning of the doping is also studied. Finally we demonstrate that QWIP properties are quite robust with regard to the non ideality of the energy band profile. △ Less

Submitted 23 March, 2010; v1 submitted 18 February, 2010; originally announced February 2010.

Interface roughness transport in THz quantum cascade detectors

Authors: Emmanuel Lhuillier, Isabelle Ribet-Mohamed, Emmanuel Rosencher, Gilles Patriarche, Amandine Buffaz, Vincent Berger, Mathieu Carras

Abstract: Infrared Detectors based on a Quantum Cascade have been proposed to suppress the dark current which is identified as a limiting factor in Quantum Well Infrared Photodetectors. Those detectors have been mostly designed for the 3-5um and 8-12um range of wavelength. For detector operating in the THz range a complete change of regime of transport is expected since the photon energy is lower than the… ▽ More Infrared Detectors based on a Quantum Cascade have been proposed to suppress the dark current which is identified as a limiting factor in Quantum Well Infrared Photodetectors. Those detectors have been mostly designed for the 3-5um and 8-12um range of wavelength. For detector operating in the THz range a complete change of regime of transport is expected since the photon energy is lower than the Longitudinal Optical (LO) phonon energy. Using a two dimensional code of transport we have identified Interface Roughness (IR) as the key interaction in such a structure. We have used scanning transmission electron microscopy (STEM) to evaluate the IR parameters (magnitude of the roughness and mean distance between defects) instead of the classical mobility measurements. Finally, we used these parameters to study their influence on the resistance of the device. △ Less

Submitted 28 October, 2009; originally announced October 2009.

Journal ref: Appl. Phys. Lett. 96, 061111 (2010)

Why does wurtzite form in nanowires of III-V zinc-blende semiconductors?

Authors: F. Glas, J. -C. Harmand, G. Patriarche

Abstract: We develop a nucleation-based model to explain the formation of the wurtzite (WZ) crystalline phase during the vapor-liquid-solid growth of free-standing nanowires of zinc-blende (ZB) semiconductors. We first show that, in nanowires, nucleation generally occurs at the outer edge of the solid/liquid interface (the triple phase line) rather than elsewhere at the solid/liquid interface. In the pres… ▽ More We develop a nucleation-based model to explain the formation of the wurtzite (WZ) crystalline phase during the vapor-liquid-solid growth of free-standing nanowires of zinc-blende (ZB) semiconductors. We first show that, in nanowires, nucleation generally occurs at the outer edge of the solid/liquid interface (the triple phase line) rather than elsewhere at the solid/liquid interface. In the present case, this entails major differences between ZB and WZ nuclei. Depending on the pertinent interface energies, WZ nucleation is favored at high liquid supersaturation. This explains our systematic observation of ZB during the early stages of nanowire growth. △ Less

Submitted 6 June, 2007; originally announced June 2007.

Comments: 4 pages with 4 figures Submitted to Physical Review Letters

Journal ref: Physical Review Letters 99, 146101 (2007)

Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy

Authors: Laura Thevenard, Ludovic Largeau, Olivia Mauguin, Gilles Patriarche, Aristide Lemaître, Nicolas Vernier, Jacques Ferré

Abstract: The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic semiconductor. The magnetic layer was grown under tensile strain on a relaxed GaInAs buffer layer using a procedure that limits the density of threa… ▽ More The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic semiconductor. The magnetic layer was grown under tensile strain on a relaxed GaInAs buffer layer using a procedure that limits the density of threading dislocations. Magnetometry, magneto-transport and polar magneto-optical Kerr effect (PMOKE) measurements reveal the high quality of this layer, in particular through its high Curie temperature (130 K) and well-defined magnetic anisotropy. We show that magnetization reversal is initiated from a limited number of nucleation centers and develops by easy domain wall propagation. Furthermore, MOKE microscopy allowed us to characterize in detail the magnetic domain structure. In particular we show that domain shape and wall motion are very sensitive to some defects, which prevents a periodic arrangement of the domains. We ascribed these defects to threading dislocations emerging in the magnetic layer, inherent to the growth mode on a relaxed buffer. △ Less

Submitted 17 February, 2006; v1 submitted 16 February, 2006; originally announced February 2006.

Journal ref: Physical Review B 73 (2006) 195331

Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks

Authors: Jose Coelho, Gilles Patriarche, Frank Glas, Guillaume Saint-Girons, Isabelle Sagnes

Abstract: We account for lateral orderings of III-V nanostructures resulting from a GaAs/InAs/InGaAs/GaAs sequence grown on GaAs by metallorganic vapour phase epitaxy at two different temperatures. For both samples, the ordering is induced by the stress field of a periodic dislocation network (DN) shallowly buried and parallel to the surface. This DN is a grain boundary (GB) that forms, between a thinGaAs… ▽ More We account for lateral orderings of III-V nanostructures resulting from a GaAs/InAs/InGaAs/GaAs sequence grown on GaAs by metallorganic vapour phase epitaxy at two different temperatures. For both samples, the ordering is induced by the stress field of a periodic dislocation network (DN) shallowly buried and parallel to the surface. This DN is a grain boundary (GB) that forms, between a thinGaAs layer (onwhich growthwas performed) and aGaAs substrate joined together by wafer bonding, in order to accommodate a tilt and a twist between these two crystals; both these misorientations are imposed in a controlled manner. This GB is composed of a one-dimensional network of mixed dislocations and of a one-dimensional network of screwdislocations. For both samples, the nanostructures observed by transmission electronmicroscopy (TEM) and atomic forcemicroscopy are ordered by the underlyingDNobserved byTEMsince they have same dimensions andorientations as the cells of the DN. △ Less

Submitted 29 November, 2004; originally announced November 2004.

Journal ref: Journal of Physics: Condensed Matter 16 (2004) 7941

Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures

Authors: Jose Coelho, Gilles Patriarche, Frank Glas, Guillaume Saint-Girons, Isabelle Sagnes, Ludovic Largeau

Abstract: We first report a detailed transmission electron microscopy study of dislocation networks (DNs) formed at shallowly buried interfaces obtained by bonding two GaAs crystals between which we establish in a controlled manner a twist and a tilt around a k110l direction. For large enough twists, the DN consists of a twodimensional network of screw dislocations accommodating mainly the twist and of a… ▽ More We first report a detailed transmission electron microscopy study of dislocation networks (DNs) formed at shallowly buried interfaces obtained by bonding two GaAs crystals between which we establish in a controlled manner a twist and a tilt around a k110l direction. For large enough twists, the DN consists of a twodimensional network of screw dislocations accommodating mainly the twist and of a one-dimensional network of mixed dislocations accommodating mainly the tilt. We show that in addition the mixed dislocations accommodate part of the twist and we observe and explain slight unexpected disorientations of the screw dislocations with respect to the k110l directions. By performing a quantitative analysis of the whole DN, we propose a coherent interpretation of these observations which also provides data inaccessible by direct experiments. When the twist is small enough, one screw subnetwork vanishes. The surface strain field induced by such DNs has been used to pilot the lateral ordering of GaAs and InGaAs nanostructures during metal-organic vapor phase epitaxy. We prove that the dimensions and orientations of the nanostructures are correlated with those of the cells of the underlying DN and explain how the interface dislocation structure governs the formation of the nanostructures. △ Less

Submitted 29 November, 2004; originally announced November 2004.

Journal ref: Physical Review B 70 (2004) 155329

Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs

Authors: F. Glas, G. Patriarche, L. Largeau, A. Lemaitre

Abstract: We present a method for the determination of the local concentrations of interstitial and substitutional Mn atoms and As antisite defects in GaMnAs. The method relies on the sensitivity of the structure factors of weak reflections to the concentrations and locations of these minority constituents. High spatial resolution is obtained by combining structure factor measurement and X-ray analysis in… ▽ More We present a method for the determination of the local concentrations of interstitial and substitutional Mn atoms and As antisite defects in GaMnAs. The method relies on the sensitivity of the structure factors of weak reflections to the concentrations and locations of these minority constituents. High spatial resolution is obtained by combining structure factor measurement and X-ray analysis in a transmission electron microscope. We demonstrate the prevalence of interstitials with As nearest neighbors in as-grown layers. △ Less

Submitted 20 August, 2004; v1 submitted 17 May, 2004; originally announced May 2004.

Comments: 10 pages, 4 figures

Journal ref: Physical Review Letters 93 (2004) 086107