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Moderate bending strain induced semiconductor to metal transition in Si nanowires
Authors:
M. Golam Rabbani,
Sunil R. Patil,
M. P. Anantram
Abstract:
Moderate amount of bending strains, ~3% are enough to induce the semiconductor-metal transition in Si nanowires of ~4nm diameter. The influence of bending on silicon nanowires of 1 nm to 4.3 nm diameter is investigated using molecular dynamics and quantum transport simulations. Local strains in nanowires are analyzed along with the effect of bending strain and nanowire diameter on electronic trans…
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Moderate amount of bending strains, ~3% are enough to induce the semiconductor-metal transition in Si nanowires of ~4nm diameter. The influence of bending on silicon nanowires of 1 nm to 4.3 nm diameter is investigated using molecular dynamics and quantum transport simulations. Local strains in nanowires are analyzed along with the effect of bending strain and nanowire diameter on electronic transport and the transmission energy gap. Interestingly, relatively wider nanowires are found to undergo semiconductor-metal transition at relatively lower bending strains. The effect of bending strain on electronic properties is then compared with the conventional way of straining, i.e. uniaxial, which shows that, the bending is much more efficient way of straining to enhance the electronic transport and also to induce the semiconductor-metal transition in experimentally realizable Si nanowires.
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Submitted 12 March, 2017;
originally announced March 2017.
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Zero-bias photocurrents in highly-disordered networks of Ge and Si nanowires
Authors:
M. Golam Rabbani,
Sunil R. Patil,
Amit Verma,
Julian E. Villarreal,
Brian A. Korgel,
Reza Nekovei,
Mahmoud M. Khader,
R. B. Darling,
M. P. Anantram
Abstract:
Semiconducting nanowire (NW) devices have garnered attention in self-powered electronic and optoelectronic applications. This work explores and exhibits, for the first time for visible light, a clear evidence of the zero-biased optoelectronic switching in randomly dispersed Ge and Si NW networks. The test bench, on which the NWs were dispersed for optoelectronic characterization, was fabricated us…
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Semiconducting nanowire (NW) devices have garnered attention in self-powered electronic and optoelectronic applications. This work explores and exhibits, for the first time for visible light, a clear evidence of the zero-biased optoelectronic switching in randomly dispersed Ge and Si NW networks. The test bench, on which the NWs were dispersed for optoelectronic characterization, was fabricated using standard CMOS fabrication process, and utilized metal contacts with dissimilar work functions - Al and Ni. The randomly dispersed NWs respond to light by exhibiting substantial photocurrents and, most remarkably, demonstrate zero-bias photo-switching. The magnitude of the photocurrent is dependent on the NW material, as well as the channel length. The photocurrent in randomly dispersed GeNWs was found to be higher by orders of magnitude compared to SiNWs. In both of these material systems, when the length of the NWs was comparable to the channel length, the currents in sparse NW networks were found to be higher than that in dense NW networks, which can be explained by considering various possible arrangements of NWs in these devices.
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Submitted 12 March, 2017;
originally announced March 2017.
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Nested Dissection Solver for Transport in 3D Nano-Electronic Devices
Authors:
Y. Zhao,
U. Hetmaniuk,
S. R. Patil,
J. Qi,
M. P. Anantram
Abstract:
The Hierarchical Schur Complement method (HSC), and the HSC-extension, have significantly accelerated the evaluation of the retarded Green's function, particularly the lesser Green's function, for two-dimensional nanoscale devices. In this work, the HSC-extension is applied to determine the solution of non-equilibrium Green's functions (NEGF) on three-dimensional nanoscale devices. The operation c…
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The Hierarchical Schur Complement method (HSC), and the HSC-extension, have significantly accelerated the evaluation of the retarded Green's function, particularly the lesser Green's function, for two-dimensional nanoscale devices. In this work, the HSC-extension is applied to determine the solution of non-equilibrium Green's functions (NEGF) on three-dimensional nanoscale devices. The operation count for the HSC-extension is analyzed for a cuboid device. When a cubic device is discretized with $N \times N \times N$ grid points, the state-of-the-art Recursive Green Function (RGF) algorithm takes $\mathcal{O}(N^7)$ operations, whereas the HSC-extension only requires $\mathcal{O}(N^6)$ operations. %Realistic operation counts also depend on the system dimensions in $xyz$-directions and the form of contact self-energy matrix. Operation counts and runtimes are also studied for three-dimensional nanoscale devices of practical interest: a graphene-boron\- nitride-graphene multilayer system, a silicon nanowire, and a DNA molecule. The numerical experiments indicate that the cost for the HSC-extension is proportional to the solution of one linear system (or one LU-factorization) and that the runtime speed-ups over RGF exceed three orders of magnitude when simulating realistic devices, such as a graphene-boron nitride-graphene multilayer system with 40,000 atoms.
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Submitted 14 February, 2017;
originally announced February 2017.
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Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis
Authors:
Y. Zhao,
Z. Wan,
X. Xu,
S. R. Patil,
U. Hetmaniuk,
M. P. Anantram
Abstract:
Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we investigate the quantum transport in heterostructures consisting of a few atomic layers thick hBN film sandwiched between graphene nanoribbon electrodes. We show a gate-controllable vertical transistor exhibiting strong…
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Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we investigate the quantum transport in heterostructures consisting of a few atomic layers thick hBN film sandwiched between graphene nanoribbon electrodes. We show a gate-controllable vertical transistor exhibiting strong negative differential resistance (NDR) effect with multiple resonant peaks, which stay pronounced for various device dimensions. We find two distinct mechanisms that are responsible for NDR, depending on the gate and applied biases, in the same device. The origin of first mechanism is a Fabry-Pé like interference and that of the second mechanism is an in-plane wave vector matching when the Dirac points of the electrodes align. The hBN layers can induce an asymmetry in the current-voltage characteristics which can be further modulated by an applied bias. We find that the electron-phonon scattering introduces the decoherence and therefore suppresses first mechanism whereas second mechanism remains relatively unaffected. We also show that the NDR features are tunable by varying device dimensions. The NDR feature with multiple resonant peaks, combined with the ultrafast tunneling speed provides prospect for the graphene-hBN-graphene heterostructure in the high-performance electronics.
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Submitted 26 June, 2015;
originally announced June 2015.
