-
Experimental detection of topological electronic state and large linear magnetoresistance in $SrSn_{4}$ superconductor
Authors:
Arnab Kumar Pariari,
Rajesh O Sharma,
Mohammad Balal,
Markus Hücker,
Tanmoy Das,
Sudipta Roy Barman
Abstract:
While recent experiments confirm the existence of hundreds of topological electronic materials, only a few exhibit the coexistence of superconductivity and a topological electronic state. These compounds attract significant attention in forefront research because of the potential for the existence of topological superconductivity, paving the way for future technological advancements. $SrSn_{4}$ is…
▽ More
While recent experiments confirm the existence of hundreds of topological electronic materials, only a few exhibit the coexistence of superconductivity and a topological electronic state. These compounds attract significant attention in forefront research because of the potential for the existence of topological superconductivity, paving the way for future technological advancements. $SrSn_{4}$ is known for exhibiting unusual superconductivity below the transition temperature ($T_{C}$) of 4.8 K. Recent theory predicts a topological electronic state in this compound, which is yet to be confirmed by experiments. Systematic and detailed studies of the magnetotransport properties of $SrSn_{4}$ and its Fermi surface characterizations are also absent. For the first time, a quantum oscillation study reveals a nontrivial $π$ Berry phase, very light effective mass, and high quantum mobility of charge carriers in $SrSn_{4}$. Magnetotransport experiment unveils large linear transverse magnetoresistance (TMR) of more than 1200% at 5 K and 14 T. Angle-dependent transport experiments detect anisotropic and four-fold symmetric TMR, with the maximum value ($\sim$ 2000%) occurring when the angle between the magnetic field and the crystallographic b-axis is 45 degree. Our results suggest that $SrSn_{4}$ is the first topological material with superconductivity above the boiling point of helium that displays such high magnetoresistance.
△ Less
Submitted 13 October, 2024;
originally announced October 2024.
-
Kramers nodal line in the charge density wave state of YTe$_3$ and the influence of twin domains
Authors:
Shuvam Sarkar,
Joydipto Bhattacharya,
Pramod Bhakuni,
Pampa Sadhukhan,
Rajib Batabyal,
Christos D. Malliakas,
Marco Bianchi,
Davide Curcio,
Shubhankar Roy,
Arnab Pariari,
Vasant G. Sathe,
Prabhat Mandal,
Mercouri G. Kanatzidis,
Philip Hofmann,
Aparna Chakrabarti,
Sudipta Roy Barman
Abstract:
Recent studies have focused on the relationship between charge density wave (CDW) collective electronic ground states and nontrivial topological states. Using angle-resolved photoemission and density functional theory, we establish that YTe$_3$ is a CDW-induced Kramers nodal line (KNL) metal, a newly proposed topological state of matter. YTe$_3$ is a non-magnetic quasi-2D chalcogenide with a CDW w…
▽ More
Recent studies have focused on the relationship between charge density wave (CDW) collective electronic ground states and nontrivial topological states. Using angle-resolved photoemission and density functional theory, we establish that YTe$_3$ is a CDW-induced Kramers nodal line (KNL) metal, a newly proposed topological state of matter. YTe$_3$ is a non-magnetic quasi-2D chalcogenide with a CDW wave vector ($q_{\rm cdw}$) of 0.2907c$^*$. Scanning tunneling microscopy and low energy electron diffraction revealed two orthogonal CDW domains, each with a unidirectional CDW and similar YTe$_3$. The effective band structure (EBS) computations, using DFT-calculated folded bands, show excellent agreement with ARPES because a realistic x-ray crystal structure and twin domains are considered in the calculations. The Fermi surface and ARPES intensity plots show weak shadow bands displaced by $q_{\rm cdw}$ from the main bands. These are linked to CDW modulation, as the EBS calculation confirms. Bilayer split main and shadow bands suggest the existence of crossings, according to theory and experiment. DFT bands, including spin-orbit coupling, indicate a nodal line along the $Σ$ line from multiple band crossings perpendicular to the KNL. Additionally, doubly degenerate bands are only found along the KNL at all energies, with some bands dispersing through the Fermi level.
△ Less
Submitted 16 May, 2024;
originally announced May 2024.
-
Room temperature relaxometry of single nitrogen-vacancy centers in proximity to $α$-RuCl$_3$ nanoflakes
Authors:
Jitender Kumar,
Dan Yudilevich,
Ariel Smooha,
Inbar Zohar,
Arnab K. Pariari,
Rainer Stöhr,
Andrej Denisenko,
Markus Hücker,
Amit Finkler
Abstract:
Investigating spin and charge noise in strongly correlated electron systems is a valuable way to analyze their physical properties and unlock new phases of matter. In this context, nitrogen-vacancy (NV) center-based magnetometry has been proven to be a versatile sensor for various classes of magnetic materials in broad temperature and frequency ranges. Here, we use longitudinal relaxation time…
▽ More
Investigating spin and charge noise in strongly correlated electron systems is a valuable way to analyze their physical properties and unlock new phases of matter. In this context, nitrogen-vacancy (NV) center-based magnetometry has been proven to be a versatile sensor for various classes of magnetic materials in broad temperature and frequency ranges. Here, we use longitudinal relaxation time $T_1$ of single NV centers to investigate the spin dynamics of nanometers-thin flakes of $α$-RuCl$_3$ at room temperature. We observe a significant reduction in the $T_1$ in the presence of $α$-RuCl$_3$ in proximity to our NVs, which we attribute to paramagnetic spin noise confined in the 2D hexagonal plane. Furthermore, the $T_1$ time exhibits an almost linear increase with an applied external magnetic field. We associate this trend with the alteration of spin and charge noise in $α$-RuCl$_3$ under an external magnetic field. These findings suggest that the influence of the room-temperature spin dynamics of $α$-RuCl$_3$ on the longitudinal relaxation time of the NV center can be used to gain information on the material itself and the technique to be used on other 2D materials.
△ Less
Submitted 24 December, 2023;
originally announced December 2023.
-
Imaging the Ettingshausen effect and cryogenic thermoelectric cooling in a van der Waals semimetal
Authors:
T. Völkl,
A. Aharon-Steinberg,
T. Holder,
E. Alpern,
N. Banu,
A. K. Pariari,
Y. Myasoedov,
M. E. Huber,
M. Hücker,
E. Zeldov
Abstract:
Attaining viable thermoelectric cooling at cryogenic temperatures is of major fundamental and technological interest for novel electronics and quantum materials applications. In-device temperature control can provide a more efficient and precise thermal environment management as compared to the conventional global cooling. Here we develop nanoscale cryogenic imaging of a magneto-thermoelectric eff…
▽ More
Attaining viable thermoelectric cooling at cryogenic temperatures is of major fundamental and technological interest for novel electronics and quantum materials applications. In-device temperature control can provide a more efficient and precise thermal environment management as compared to the conventional global cooling. Here we develop nanoscale cryogenic imaging of a magneto-thermoelectric effect and demonstrate absolute cooling and an ultrahigh Ettingshausen effect in exfoliated WTe2 Weyl semimetal flakes at liquid He temperatures. Application of a current and perpendicular magnetic field gives rise to cooling via generation of electron-hole pairs on one side of the sample and heating by their recombination at the opposite side. In contrast to bulk materials, the cooling process is found to be nonmonotonic in magnetic field and device size. The derived model of magneto-thermoelectricity in mesoscopic semimetal devices shows that the cooling efficiency and the induced temperature profiles are governed by the interplay between sample geometry, electron-hole recombination length, magnetic field, and flake and substrate heat conductivities. The findings open the way for direct integration of microscopic thermoelectric cooling and for temperature landscape engineering in novel van der Waals devices.
△ Less
Submitted 10 December, 2023;
originally announced December 2023.
-
Growth of bilayer stanene on a magnetic topological insulator aided by a buffer layer
Authors:
Sajal Barman,
Pramod Bhakuni,
Shuvam Sarkar,
Joydipto Bhattacharya,
Mohammad Balal,
Mrinal Manna,
Soumen Giri,
Arnab Pariari,
Tomáš Skála,
Markus Huecker,
Rajib Batabyal,
Aparna Chakrabarti,
Sudipta Roy Barman
Abstract:
Stanene, a two-dimensional counterpart to graphene, has the potential to exhibit novel quantum phenomena when grown on a magnetic topological insulator (MTI). This work demonstrates the formation of up to bilayer stanene on 30\% Sb-doped MnBi$_{2}$Te$_4$ (MBST), a well known MTI, albeit with a buffer layer (BL) in between. Angle-resolved photoemission spectroscopy (ARPES), when combined with densi…
▽ More
Stanene, a two-dimensional counterpart to graphene, has the potential to exhibit novel quantum phenomena when grown on a magnetic topological insulator (MTI). This work demonstrates the formation of up to bilayer stanene on 30\% Sb-doped MnBi$_{2}$Te$_4$ (MBST), a well known MTI, albeit with a buffer layer (BL) in between. Angle-resolved photoemission spectroscopy (ARPES), when combined with density functional theory (DFT), reveals stanene related bands such as two hole-like bands and an inverted parabolic band around the $\overlineΓ$ point. An outer hole-like band traverses the Fermi level (\ef) and gives rise to a hexagonal Fermi surface, showing that stanene on MBST is metallic. In contrast, a bandgap of 0.8 eV is observed at the $\overline{K}$ point. We find that DFT shows good agreement with ARPES only when the BL and hydrogen passivation of the top Sn layer are considered in the calculation. Scanning tunneling microscopy (STM) establishes the honeycomb buckled structure of stanene. A stanene-related component is also detected in the Sn $d$ core level spectra, in addition to a BL-related component. The BL, which forms because of the chemical bonding between Sn and the top two layers of MBST, has an ordered crystal lattice with random anti-site defects. The composition of the BL is estimated to be Sn:Te:Bi/Sb $\approx$ 2:1:1 from x-ray photoelectron spectroscopy. Low energy electron diffraction shows that the lattice constant of stanene is marginally larger than that of MBST, and the STM result aligns with this. The BL bridges this disparity and provides a platform for stanene growth.
△ Less
Submitted 8 September, 2024; v1 submitted 12 October, 2023;
originally announced October 2023.
-
Scanning SQUID-on-tip microscope in a top-loading cryogen-free dilution refrigerator
Authors:
Haibiao Zhou,
Nadav Auerbach,
Indranil Roy,
Matan Bocarsly,
Martin E. Huber,
Barun Barick,
Arnab Pariari,
Markus Hücker,
Zhi Shiuh Lim,
A. Ariando,
Alexey I. Berdyugin,
Na Xin,
Michael Rappaport,
Yuri Myasoedov,
Eli Zeldov
Abstract:
The scanning superconducting quantum interference device (SQUID) fabricated on the tip of a sharp quartz pipette (SQUID-on-tip) has emerged as a versatile tool for nanoscale imaging of magnetic, thermal, and transport properties of microscopic devices of quantum materials. We present the design and performance of a scanning SQUID-on-tip microscope in a top-loading probe of a cryogen-free dilution…
▽ More
The scanning superconducting quantum interference device (SQUID) fabricated on the tip of a sharp quartz pipette (SQUID-on-tip) has emerged as a versatile tool for nanoscale imaging of magnetic, thermal, and transport properties of microscopic devices of quantum materials. We present the design and performance of a scanning SQUID-on-tip microscope in a top-loading probe of a cryogen-free dilution refrigerator. The microscope is enclosed in a custom-made vacuum-tight cell mounted at the bottom of the probe and is suspended by springs to suppress vibrations caused by the pulse tube cryocooler. Two capillaries allow in-situ control of helium exchange gas pressure in the cell that is required for thermal imaging. A nanoscale heater is used to create local temperature gradients in the sample, which enables quantitative characterization of the relative vibrations between the tip and the sample. The spectrum of the vibrations shows distinct resonant peaks with maximal power density of about 27 nm/Hz$^{1/2}$ in the in-plane direction. The performance of the SQUID-on-tip microscope is demonstrated by magnetic imaging of the MnBi$_2$Te$_4$ magnetic topological insulator, magnetization and current distribution imaging in a SrRuO$_3$ ferromagnetic oxide thin film, and by thermal imaging of dissipation in graphene.
△ Less
Submitted 23 April, 2023;
originally announced April 2023.
-
Charge density wave induced nodal lines in LaTe$_3$
Authors:
Shuvam Sarkar,
Joydipto Bhattacharya,
Pampa Sadhukhan,
Davide Curcio,
Rajeev Dutt,
Vipin Kumar Singh,
Marco Bianchi,
Arnab Pariari,
Shubhankar Roy,
Prabhat Mandal,
Tanmoy Das,
Philip Hofmann,
Aparna Chakrabarti,
Sudipta Roy Barman
Abstract:
LaTe$_3$ is a noncentrosymmetric (NC) material with time reversal (TR) symmetry in which the charge density wave (CDW) is hosted by the Te bilayers. Here, we show that LaTe$_3$ hosts a Kramers nodal line (KNL), a twofold degenerate nodal line that connects the TR invariant momenta in NC achiral systems, using angle resolved photoemission spectroscopy (ARPES), density functional theory (DFT), effec…
▽ More
LaTe$_3$ is a noncentrosymmetric (NC) material with time reversal (TR) symmetry in which the charge density wave (CDW) is hosted by the Te bilayers. Here, we show that LaTe$_3$ hosts a Kramers nodal line (KNL), a twofold degenerate nodal line that connects the TR invariant momenta in NC achiral systems, using angle resolved photoemission spectroscopy (ARPES), density functional theory (DFT), effective band structure (EBS) calculated by band unfolding, and symmetry arguments. DFT incorporating spin-orbit coupling (SOC) reveals that the KNL -- protected by the TR and lattice symmetries -- imposes gapless crossings between the bilayer-split CDW-induced shadow bands and the main bands. In excellent agreement with the EBS, ARPES data corroborate the presence of the KNL and show that the crossings traverse the Fermi level. Furthermore, spinless nodal lines - entirely gapped out by the SOC - are formed by the linear crossings of the shadow and main bands with a high Fermi velocity.
△ Less
Submitted 2 December, 2022;
originally announced December 2022.
-
Direct observation of vortices in an electron fluid
Authors:
Amit Aharon-Steinberg,
Tobias Völkl,
Arkady Kaplan,
Arnab K. Pariari,
Indranil Roy,
Tobias Holder,
Yotam Wolf,
Alexander Y. Meltzer,
Yuri Myasoedov,
Martin E. Huber,
Binghai Yan,
Gregory Falkovich,
Leonid S. Levitov,
Markus Hücker,
Eli Zeldov
Abstract:
Vortices are the hallmarks of hydrodynamic flow. Recent studies indicate that strongly-interacting electrons in ultrapure conductors can display signatures of hydrodynamic behavior including negative nonlocal resistance, Poiseuille flow in narrow channels, and a violation of the Wiedemann-Franz law. Here we provide the first visualization of whirlpools in an electron fluid. By utilizing a nanoscal…
▽ More
Vortices are the hallmarks of hydrodynamic flow. Recent studies indicate that strongly-interacting electrons in ultrapure conductors can display signatures of hydrodynamic behavior including negative nonlocal resistance, Poiseuille flow in narrow channels, and a violation of the Wiedemann-Franz law. Here we provide the first visualization of whirlpools in an electron fluid. By utilizing a nanoscale scanning superconducting quantum interference device on a tip (SQUID-on-tip) we image the current distribution in a circular chamber connected through a small aperture to an adjacent narrow current carrying strip in high-purity type-II Weyl semimetal WTe2. In this geometry, the Gurzhi momentum diffusion length and the size of the aperture determine the vortex stability phase diagram. We find that the vortices are present only for small apertures, whereas the flow is laminar (non-vortical) for larger apertures, consistent with the theoretical analysis of the hydrodynamic regime and in contrast to the expectations of ballistic transport in WTe2 at low temperatures. Moreover, near the vortical-to-laminar transition, we observe a single vortex in the chamber splitting into two vortices, a behavior that can occur only in the hydrodynamic regime and cannot be sustained by ballistic transport. These findings suggest a novel mechanism of hydrodynamic flow: instead of the commonly considered electron-electron scattering at the bulk, which becomes extremely weak at low temperatures, the spatial diffusion of charge carriers' momenta is enabled by small-angle scattering at the planar surfaces of thin pure crystals. This surface-induced para-hydrodynamics opens new avenues for exploring and utilizing electron fluidics in high-mobility electron systems.
△ Less
Submitted 6 February, 2022;
originally announced February 2022.
-
Anomalous Hall effect in half-metallic Heusler compound Co$_{2}$Ti$X$ ($X$=Si, Ge)
Authors:
Shubhankar Roy,
Ratnadwip Singha,
Arup Ghosh,
Arnab Pariari,
Prabhat Mandal
Abstract:
Though Weyl fermions have recently been observed in several materials with broken inversion symmetry, there are very few examples of such systems with broken time reversal symmetry. Various Co$_{2}$-based half-metallic ferromagnetic Heusler compounds are lately predicted to host Weyl type excitations in their band structure. These magnetic Heusler compounds with broken time reversal symmetry are e…
▽ More
Though Weyl fermions have recently been observed in several materials with broken inversion symmetry, there are very few examples of such systems with broken time reversal symmetry. Various Co$_{2}$-based half-metallic ferromagnetic Heusler compounds are lately predicted to host Weyl type excitations in their band structure. These magnetic Heusler compounds with broken time reversal symmetry are expected to show a large momentum space Berry curvature, which introduces several exotic magneto-transport properties. In this report, we present systematic analysis of experimental results on anomalous Hall effect (AHE) in Co$_2$Ti$X$ ($X$=Si and Ge). This study is an attempt to understand the role of Berry curvature on AHE in Co$_2$Ti$X$ family of materials. The anomalous Hall resistivity is observed to scale quadratically with the longitudinal resistivity for both the compounds. The detailed analysis indicates that in anomalous Hall conductivity, the intrinsic Karplus-Luttinger Berry phase mechanism dominates over the extrinsic skew scattering and side-jump mechanism.
△ Less
Submitted 11 August, 2020;
originally announced August 2020.
-
Atoms to topological electronic materials: A bedtime story for beginners
Authors:
Arnab Kumar Pariari
Abstract:
In this review, We discussed the theoretical foundation and experimental discovery of different topological electronic states of material in condensed matter. At first, we briefly reviewed the conventional electronic states, which have been realized in band theory of solid. Next, the simplest non-trivial insulating phase (Integer Quantum Hall State) and the concept of topological order in condense…
▽ More
In this review, We discussed the theoretical foundation and experimental discovery of different topological electronic states of material in condensed matter. At first, we briefly reviewed the conventional electronic states, which have been realized in band theory of solid. Next, the simplest non-trivial insulating phase (Integer Quantum Hall State) and the concept of topological order in condensed matter electronic system have been introduced. In the following sections, we discussed Quantum Spin Hall (QSH) State in two dimensions (2D), and reviewed the theoretical and experimental developments from 2D QSH state to 3D topological insulators (TI). Subsequently, we gave a brief overview on theoretical and experimental understanding on recently discovered topological Dirac semimetals, Weyl semimetals, three-, six- , and eight-fold degenerate semimetals, and Nodal line semimetals. Then, topological crystalline insulator, which can not be considered as a descendent of Quantum Spin Hall or Integer Quantum Hall insulator, has been introduced. Finally, we discussed the presence of magnetism in some topological materials and its consequence on electronic band structure.
△ Less
Submitted 15 May, 2019;
originally announced May 2019.
-
Complex exchange mechanism driven ferromagnetism in half-metallic Heusler Co$_{2}$TiGe: Evidence from critical behavior
Authors:
Shubhankar Roy,
Nazir Khan,
Ratnadwip Singha,
Arnab Pariari,
Prabhat Mandal
Abstract:
We have investigated the critical phenomenon associated with the magnetic phase transition in the half-metallic full-Heusler Co$_2$TiGe. The compound undergoes a continuous ferromagnetic to paramagnetic phase transition at the Curie temperature $T_{C}$=371.5 K. The analysis of magnetization isotherms in the vicinity of $T_{c}$, following modified Arrott plot method, Kouvel-Fisher technique, and cr…
▽ More
We have investigated the critical phenomenon associated with the magnetic phase transition in the half-metallic full-Heusler Co$_2$TiGe. The compound undergoes a continuous ferromagnetic to paramagnetic phase transition at the Curie temperature $T_{C}$=371.5 K. The analysis of magnetization isotherms in the vicinity of $T_{c}$, following modified Arrott plot method, Kouvel-Fisher technique, and critical isotherm plot, yields the asymptotic critical exponents $β$=0.495, $γ$=1.324, and $δ$=3.67. The self-consistency and reliability of the obtained exponents are further verified by the Widom scaling relation and scaling equation of states. The mean-field-like value of the critical exponent $β$ suggests long-range nature of the exchange interactions, whereas the values of the critical exponents $γ$ and $δ$, imply sizeable critical spin fluctuations. The half-metallic itinerant character of Co$_{2}$TiGe in the presence of magnetic inhomogeneity may result in such a strong deviation from the three-dimensional Heisenberg values ($β$=0.369, $γ$=1.38 and $δ$=4.8) of the critical exponents towards the mean field values ($β$=0.5, $γ$=1 and $δ$=3). The results suggest complex nature of exchange couplings that stabilize the long-range ferromagnetic ordering in the system and are consistent with the earlier theoretical studies on the exchange mechanism in Co$_2$TiGe.
△ Less
Submitted 26 March, 2019;
originally announced March 2019.
-
Magnetotransport properties and giant anomalous Hall angle in half-Heusler compound TbPtBi
Authors:
Ratnadwip Singha,
Shubhankar Roy,
Arnab Pariari,
Biswarup Satpati,
Prabhat Mandal
Abstract:
Magnetic lanthanide half-Heuslers ($R$PtBi; $R$ being the lanthanide) represent an attractive subgroup of the Heusler family and have been identified as ideal candidates for time reversal symmetry breaking topological Weyl semimetals. In this paper, we present the detailed analysis of the magnetotransport properties of frustrated antiferromagnet TbPtBi. This material shows large, non-saturating ma…
▽ More
Magnetic lanthanide half-Heuslers ($R$PtBi; $R$ being the lanthanide) represent an attractive subgroup of the Heusler family and have been identified as ideal candidates for time reversal symmetry breaking topological Weyl semimetals. In this paper, we present the detailed analysis of the magnetotransport properties of frustrated antiferromagnet TbPtBi. This material shows large, non-saturating magnetoresistance (MR) with unusual magnetic field dependence. The MR of TbPtBi is significantly anisotropic with respect to the magnetic field, applied along different crystallographic directions and indicates the anisotropic nature of the Fermi surface. The chiral anomaly induced negative longitudinal magnetoresistance confirms the presence of Weyl fermions. At low temperature, Berry phase driven large anomalous Hall conductivity has been observed. The calculated anomalous Hall angle is the largest reported so far.
△ Less
Submitted 28 January, 2019;
originally announced January 2019.
-
Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe$_{3}$
Authors:
Arnab Pariari,
Sudipta Koley,
Shubhankar Roy,
Ratnadwip Singha,
Mukul S. Laad,
A. Taraphder,
Prabhat Mandal
Abstract:
Charge density wave (CDW) states in solids bear an intimate connection to underlying fermiology. Modification of the latter by a suitable perturbation provides an attractive handle to unearth novel CDW states. Here, we combine extensive magnetotransport experiments and first-principles electronic structure calculations on a non-magnetic tritelluride LaTe$_{3}$ single crystal to uncover phenomena r…
▽ More
Charge density wave (CDW) states in solids bear an intimate connection to underlying fermiology. Modification of the latter by a suitable perturbation provides an attractive handle to unearth novel CDW states. Here, we combine extensive magnetotransport experiments and first-principles electronic structure calculations on a non-magnetic tritelluride LaTe$_{3}$ single crystal to uncover phenomena rare in CDW systems: $(i)$ hump-like feature in the temperature dependence of resistivity at low temperature under application of magnetic field, which moves to higher temperature with increasing field strength, $(ii)$ highly anisotropic large transverse magnetoresistance (MR) upon rotation of magnetic field about current parallel to crystallographic c-axis, (iii) anomalously large positive MR with spike-like peaks at characteristic angles when the angle between current and field is varied in the bc-plane, (iv) extreme sensitivity of the angular variation of MR on field and temperature. Moreover, our Hall measurement reveals remarkably high carrier mobility $\sim$ 33000 cm$^{2}$/Vs, which is comparable to that observed in some topological semimetals. These novel observations find a comprehensive explication in our density functional theory (DFT) and dynamical mean field theory (DMFT) calculations that capture field-induced electronic structure modification in LaTe$_{3}$. The band structure theory together with transport calculations suggest the possibility of a second field-induced CDW transition from the field-reconstructed Fermi surface, which qualitatively explains the hump in temperature dependence of resistivity at low temperature. Thus, our study exposes the novel manifestations of the interplay between CDW order and field-induced electronic structure modifications in LaTe$_{3}$, and establishes a new route to tune CDW states by perturbations like magnetic field.
△ Less
Submitted 23 May, 2020; v1 submitted 24 January, 2019;
originally announced January 2019.
-
Planar Hall effect in type II Dirac semimetal VAl$_{3}$
Authors:
Ratnadwip Singha,
Shubhankar Roy,
Arnab Pariari,
Biswarup Satpati,
Prabhat Mandal
Abstract:
The study of electronic properties in topological systems is one of the most fascinating topics in condensed matter physics, which has generated enormous interests in recent times. New materials are frequently being proposed and investigated to identify their non-trivial band structure. While sophisticated techniques such as angle-resolved photoemission spectroscopy have become popular to map the…
▽ More
The study of electronic properties in topological systems is one of the most fascinating topics in condensed matter physics, which has generated enormous interests in recent times. New materials are frequently being proposed and investigated to identify their non-trivial band structure. While sophisticated techniques such as angle-resolved photoemission spectroscopy have become popular to map the energy-momentum relation, the transport experiments lack any direct confirmation of Dirac and Weyl fermions in a system. From band structure calculations, VAl$_{3}$ has been proposed to be a type II topological Dirac semimetal. This material represents a large family of isostructural compounds, all having similar electronic band structure and is an ideal system to explore the rich physics of Lorentz symmetry violating Dirac fermions. In this work, we present a detailed analysis on the magnetotransport properties of VAl$_{3}$. A large, non-saturating magnetoresistance has been observed. Hall resistivity reveals the presence of two types of charge carriers with high mobility. Our measurements show a large planar Hall effect in this material, which is robust and can be easily detectable up to high temperature. This phenomenon originates from the relativistic chiral anomaly and non-trivial Berry curvature, which validates the theoretical prediction of the Dirac semimetal phase in VAl$_{3}$.
△ Less
Submitted 21 June, 2018;
originally announced June 2018.
-
Tip-induced Superconductivity Coexisting with Preserved Topological Properties in Line-nodal Semimetal ZrSiS
Authors:
Leena Aggarwal,
Chandan K. Singh,
Mohammad Aslam,
Ratnadwip Singha,
Arnab Pariari,
Sirshendu Gayen,
Mukul Kabir,
Prabhat Mandal,
Goutam Sheet
Abstract:
ZrSiS was recently shown to be a new material with topologically non-trivial band structure which exhibits multiple Dirac nodes and a robust linear band dispersion up to an unusually high energy of 2\,eV. Such a robust linear dispersion makes the topological properties of ZrSiS insensitive to perturbations like carrier doping or lattice distortion. Here we show that a novel superconducting phase w…
▽ More
ZrSiS was recently shown to be a new material with topologically non-trivial band structure which exhibits multiple Dirac nodes and a robust linear band dispersion up to an unusually high energy of 2\,eV. Such a robust linear dispersion makes the topological properties of ZrSiS insensitive to perturbations like carrier doping or lattice distortion. Here we show that a novel superconducting phase with a remarkably high $T_c$ of 7.5\,K can be induced in single crystals of ZrSiS by a non-superconducting metallic tip of Ag. From first-principles calculations we show that the observed superconducting phase might originate from dramatic enhancement of density of states due to the presence of a metallic tip on ZrSiS. Our calculations also show that the emerging tip-induced superconducting phase co-exists with the well preserved topological properties of ZrSiS.
△ Less
Submitted 22 February, 2018;
originally announced February 2018.
-
Magneto-transport properties of proposed triply degenerate topological semimetal Pd$_{3}$Bi$_{2}$S$_{2}$
Authors:
Shubhankar Roy,
Arnab Pariari,
Ratnadwip Singha,
Biswarup Satpati,
Prabhat Mandal
Abstract:
We report transport properties of single-crystalline Pd$_{3}$Bi$_{2}$S$_{2}$, which has been predicted to host an unconventional electronic phase of matter beyond three-dimensional Dirac and Weyl semimetals. Similar to several topological systems, the resistivity shows field induced metal-semiconductor-like crossover at low temperature. Large, anisotropic and non-saturating magnetoresistance (MR)…
▽ More
We report transport properties of single-crystalline Pd$_{3}$Bi$_{2}$S$_{2}$, which has been predicted to host an unconventional electronic phase of matter beyond three-dimensional Dirac and Weyl semimetals. Similar to several topological systems, the resistivity shows field induced metal-semiconductor-like crossover at low temperature. Large, anisotropic and non-saturating magnetoresistance (MR) has been observed in transverse experimental configuration. At 2 K and 9 T, the MR value reaches as high as $\sim$1.1$\times$10$^{3}$ \%. Hall resistivity reveals the presence of two types of charge carriers and has been analyzed using two-band model. In spite of the large density ($>$ 10$^{21}$ cm$^{-3}$), the mobility of charge carriers is found to be quite high ($\sim$ 0.75$\times$10$^{4}$ cm$^{2}$ V$^{-1}$ s$^{-1}$ for hole and $\sim$ 0.3$\times$10$^{4}$ cm$^{2}$ V$^{-1}$ s$^{-1}$ for electron). The observed magneto-electrical properties indicate that Pd$_{3}$Bi$_{2}$S$_{2}$ may be a new member of the topological semimetal family, which can have a significant impact in technological applications.
△ Less
Submitted 26 April, 2018; v1 submitted 2 February, 2018;
originally announced February 2018.
-
Probing lattice dynamics and electron-phonon coupling in topological nodal-line semimetal ZrSiS
Authors:
Ratnadwip Singha,
Sudeshna Samanta,
Swastika Chatterjee,
Arnab Pariari,
Dipanwita Majumdar,
Biswarup Satpati,
Lin Wang,
Achintya Singha,
Prabhat Mandal
Abstract:
Topological materials provide an exclusive platform to study the dynamics of relativistic particles in table-top experiments and offer the possibility of wide-scale technological applications. ZrSiS is a newly discovered topological nodal-line semimetal and has drawn enormous interests. In this report, we have investigated the lattice dynamics and electron-phonon interaction in single crystalline…
▽ More
Topological materials provide an exclusive platform to study the dynamics of relativistic particles in table-top experiments and offer the possibility of wide-scale technological applications. ZrSiS is a newly discovered topological nodal-line semimetal and has drawn enormous interests. In this report, we have investigated the lattice dynamics and electron-phonon interaction in single crystalline ZrSiS using Raman spectroscopy. Polarization and angle resolved measurements have been performed and the results have been analyzed using crystal symmetries and theoretically calculated atomic vibrational patterns along with phonon dispersion spectra. Wavelength and temperature dependent measurements show the complex interplay of electron and phonon degrees of freedom, resulting in resonant phonon and quasielastic electron scatterings through inter-band transitions. Our high-pressure Raman studies reveal vibrational anomalies, which were further investigated from the high-pressure synchrotron x-ray diffraction (HPXRD) spectra. From HPXRD, we have clearly identified pressure-induced structural transitions and coexistence of multiple phases, which also indicate possible electronic topological transitions in ZrSiS. The present study not only provides the fundamental information on the phonon subsystem, but also sheds some light in understanding the topological nodal-line phase in ZrSiS and other iso-structural systems.
△ Less
Submitted 30 March, 2018; v1 submitted 22 December, 2017;
originally announced December 2017.
-
Probing the Fermi surface and magnetotransport properties in MoAs$_{2}$
Authors:
Ratnadwip Singha,
Arnab Pariari,
Prabhat Mandal,
Gaurav Kumar Gupta,
Tanmoy Das
Abstract:
Transition metal dipnictides (TMDs) have recently been identified as possible candidates to host topology protected electronic band structure. These materials belong to an isostructural family and show several exotic transport properties. Especially, the large values of magnetoresistance (MR) and carrier mobility have drawn significant attention from the perspective of technological applications.…
▽ More
Transition metal dipnictides (TMDs) have recently been identified as possible candidates to host topology protected electronic band structure. These materials belong to an isostructural family and show several exotic transport properties. Especially, the large values of magnetoresistance (MR) and carrier mobility have drawn significant attention from the perspective of technological applications. In this report, we have investigated the magnetotransport and Fermi surface properties of single crystalline MoAs$_{2}$, another member of this group of compounds. Field induced resistivity plateau and a large MR have been observed, which are comparable to several topological systems. Interestingly, in contrast to other isostructural materials, the carrier density in MoAs$_{2}$ is quite high and shows single-band dominated transport. The Fermi pockets, which have been identified from the quantum oscillation, are largest among the members of this group and have significant anisotropy with crystallographic direction. Our first-principles calculations reveal a substantial difference between the band structures of MoAs$_{2}$ and other TMDs. The calculated Fermi surface consists of one electron pocket and another 'open-orbit' hole pocket, which has not been observed in TMDs so far.
△ Less
Submitted 24 August, 2017;
originally announced August 2017.
-
Anisotropic Fermi surface probed by the de Haas-van Alphen oscillation in proposed Dirac Semimetal TaSb$_{2}$
Authors:
Arnab Pariari,
Ratnadwip Singha,
Shubhankar Roy,
Biswarup Satpati,
Prabhat Mandal
Abstract:
TaSb$_{2}$ has been predicted theoretically and proposed through magnetotransport experiment to be a topological semimetal. In earlier reports, the Shubnikov-de Haas oscillation has been analyzed to probe the Fermi surface, with magnetic field along a particular crystallographic axis only. By employing a sample rotator, we reveal highly anisotropic transverse magnetoresistance by rotating the magn…
▽ More
TaSb$_{2}$ has been predicted theoretically and proposed through magnetotransport experiment to be a topological semimetal. In earlier reports, the Shubnikov-de Haas oscillation has been analyzed to probe the Fermi surface, with magnetic field along a particular crystallographic axis only. By employing a sample rotator, we reveal highly anisotropic transverse magnetoresistance by rotating the magnetic field along different crystallographic directions. To probe the anisotropy in the Fermi surface, we have performed magnetization measurements and detected strong de Haas-van Alphen (dHvA) oscillations for the magnetic field applied along \textbf{b} and \textbf{c} axes as well as perpendicular to \textbf{bc} plane of the crystals. Three Fermi pockets have been identified by analyzing the dHvA oscillations. Hall measurement reveals electron as the only charge carrier, i.e., all the three Fermi pockets are electron type. With the application of magnetic field along different crystal directions, the cross sectional areas of the Fermi pockets have been found significantly different. Other physical parameters, such as the effective mass of the charge carrier and Fermi velocity have also been calculated using the Lifshitz-Kosevich formula.
△ Less
Submitted 9 June, 2017;
originally announced June 2017.
-
Magnetotransport properties and evidence of topological insulating state in LaSbTe
Authors:
Ratnadwip Singha,
Arnab Pariari,
Biswarup Satpati,
Prabhat Mandal
Abstract:
In this report, we present the magnetotransport and magnetization properties of LaSbTe single crystals. Magnetic field-induced turn-on behavior and low-temperature resistivity plateau have been observed. By adopting both metal-semiconductor crossover and Kohler scaling analysis, we have discussed the possible origin of the temperature and magnetic field dependence of resistivity. At 5 K and 9 T, a…
▽ More
In this report, we present the magnetotransport and magnetization properties of LaSbTe single crystals. Magnetic field-induced turn-on behavior and low-temperature resistivity plateau have been observed. By adopting both metal-semiconductor crossover and Kohler scaling analysis, we have discussed the possible origin of the temperature and magnetic field dependence of resistivity. At 5 K and 9 T, a large, non-saturating transverse magnetoresistance (MR) $\sim$ 5$\times$10$^{3}$ \% has been obtained. The MR shows considerable anisotropy, when the magnetic field is applied along different crystallographic directions. The non-linear field dependence of the Hall resistivity confirms the presence of two types of charge carriers. From the semiclassical two-band fitting of Hall conductivity and longitudinal conductivity, very high carrier mobilities and almost equal electron and hole densities have been deduced, which result in large MR. The Fermi surface properties have been analyzed from de Haas-van Alphen oscillation. From the magnetization measurement, the signature of non-trivial surface state has been detected, which confirms that LaSbTe is a topological insulator, consistent with the earlier first-principles calculations.
△ Less
Submitted 28 January, 2018; v1 submitted 29 September, 2016;
originally announced September 2016.
-
Prominent metallic surface conduction and the singular magnetic response of topological Dirac fermion in three-dimensional topological insulator Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$
Authors:
Prithwish Dutta,
Arnab Pariari,
Prabhat Mandal
Abstract:
We report semiconductor to metal-like crossover in temperature dependence of resistivity ($ρ$) due to the switching of charge transport from bulk to surface channel in three-dimensional topological insulator Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$. Unlike earlier studies, a much sharper drop in $ρ$($T$) is observed below the crossover temperature due to the dominant surface conduction. Remarkably…
▽ More
We report semiconductor to metal-like crossover in temperature dependence of resistivity ($ρ$) due to the switching of charge transport from bulk to surface channel in three-dimensional topological insulator Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$. Unlike earlier studies, a much sharper drop in $ρ$($T$) is observed below the crossover temperature due to the dominant surface conduction. Remarkably, the resistivity of the conducting surface channel follows a rarely observable $T^2$ dependence at low temperature as predicted theoretically for a two-dimensional Fermi liquid system. The field dependence of magnetization shows a cusp-like paramagnetic peak in the susceptibility ($χ$) at zero field over the diamagnetic background. The peak is found to be robust against temperature and decays linearly with field from its zero-field value. This unique behavior of $χ$ is associated with the spin-momentum locked topological surface state of Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$. The reconstruction of surface state with time is clearly reflected through the reduction of peak height with the age of the sample.
△ Less
Submitted 21 September, 2016; v1 submitted 3 August, 2016;
originally announced August 2016.
-
Coexistence of topological Dirac fermions in the surface and three-dimensional Dirac cone state in the bulk of ZrTe$_{5}$ single crystal
Authors:
Arnab Pariari,
Prabhat Mandal
Abstract:
Although, the long-standing debate on the resistivity anomaly in ZrTe$_{5}$ somewhat comes to an end, the exact topological nature of the electronic band structure remains elusive till today. Theoretical calculations predicted that bulk ZrTe$_{5}$ to be either a weak or a strong three-dimensional (3D) topological insulator. However, the angle resolved photoemission spectroscopy and transport measu…
▽ More
Although, the long-standing debate on the resistivity anomaly in ZrTe$_{5}$ somewhat comes to an end, the exact topological nature of the electronic band structure remains elusive till today. Theoretical calculations predicted that bulk ZrTe$_{5}$ to be either a weak or a strong three-dimensional (3D) topological insulator. However, the angle resolved photoemission spectroscopy and transport measurements clearly demonstrate 3D Dirac cone state with a small mass gap between the valence band and conduction band in the bulk. From the magnetization and magneto-transport measurements on ZrTe$_{5}$ single crystal, we have detected both the signature of helical spin texture from topological surface state and chiral anomaly associated with the 3D Dirac cone state in the bulk. This implies that ZrTe$_{5}$ is a novel 3D topological insulator having massless Dirac fermionic excitation in its bulk gap state. Whereas, no 3D topological insulator known in material science holds linear band dispersion in its insulating bulk. Apart from the band topology, it is also apparent from the resistivity and Hall measurements that the anomalous peak in the resistivity can be shifted to a much lower temperature ($T$$<$2 K) by controlling impurity and defects.
△ Less
Submitted 24 August, 2016; v1 submitted 16 March, 2016;
originally announced March 2016.
-
Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS
Authors:
R. Singha,
A. Pariari,
B. Satpati,
P. Mandal
Abstract:
While the discovery of Dirac and Weyl type excitations in electronic systems is a major breakthrough in recent condensed matter physics, finding appropriate materials for fundamental physics and technological applications, is an experimental challenge. In all the reported materials, linear dispersion survives only up to a few hundred meV from the Dirac or Weyl nodes. On the other hand, real materi…
▽ More
While the discovery of Dirac and Weyl type excitations in electronic systems is a major breakthrough in recent condensed matter physics, finding appropriate materials for fundamental physics and technological applications, is an experimental challenge. In all the reported materials, linear dispersion survives only up to a few hundred meV from the Dirac or Weyl nodes. On the other hand, real materials are subject to uncontrolled doping during preparation and thermal effect near room temperature can hinder the rich physics. In ZrSiS, ARPES measurements have shown an unusually robust linear dispersion (up to $\sim$2 eV) with multiple non-degenerate Dirac nodes. In this context, we present the magnetotransport study on ZrSiS crystal, which represents a large family of materials (\textit{WHM} with \textit{W} = Zr, Hf; \textit{H} = Si, Ge, Sn; \textit{M} = O, S, Se, Te) with identical band topology. Along with extremely large and non-saturating magnetoresistance (MR), $\sim$ 1.4 $\times$ 10$^{5}$ \% at 2 K and 9 T, it shows strong anisotropy depending on the direction of the magnetic field. Quantum oscillation and Hall effect measurements have revealed large hole and small electron Fermi pockets. Non-trivial $π$ Berry phase confirms the Dirac fermionic nature for both types of charge carriers. The long-sought relativistic phenomenon of massless Dirac fermions, known as Adler-Bell-Jackiw chiral anomaly, has also been observed.
△ Less
Submitted 17 January, 2017; v1 submitted 5 February, 2016;
originally announced February 2016.
-
Magnetic field induced drastic violation of Wiedemann-Franz law in Dirac semimetal Cd$_{3}$As$_{2}$
Authors:
A. Pariari,
N. Khan,
P. Mandal
Abstract:
The journey through the nontrivial band topology beyond the conventional band structure has resulted in the recent discovery of three-dimensional Dirac semimetal phase in Na$_{3}$Bi and Cd$_{3}$As$_{2}$. The bulk state of which is semi-metallic obeying linear energy dispersion, while the surface state is topology protected Fermi arc. Due to the unique band topology, they show different exotic elec…
▽ More
The journey through the nontrivial band topology beyond the conventional band structure has resulted in the recent discovery of three-dimensional Dirac semimetal phase in Na$_{3}$Bi and Cd$_{3}$As$_{2}$. The bulk state of which is semi-metallic obeying linear energy dispersion, while the surface state is topology protected Fermi arc. Due to the unique band topology, they show different exotic electronic properties of both fundamental and technological interest. From electrical and thermal transport measurements, we have demonstrated a remarkable violation of Wiedemann-Franz law (WFL) under application of magmatic field in Cd$_{3}$As$_{2}$ and the violation becomes more and more drastic with increasing magnetic field strength. Whereas the validity of WFL is the key feature of Landau Fermi-liquid theory in metal, the notion of quasiparticles is the building block to this theory. This implies that the fundamental concept of Landau quasiparticle no longer holds in Cd$_{3}$As$_{2}$ in presence of magnetic field. The continuous break down of Landau quasiparticle framework with field introduces a concept of field induced quantum critical point (QCP) as in the case of heavy fermion compounds YbRh$_{2}$Si$_{2}$, Sr$_{3}$Ru$_{2}$O$_{7}$, etc.
△ Less
Submitted 10 August, 2015;
originally announced August 2015.
-
Tuning the scattering mechanism in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$
Authors:
A. Pariari,
N. Khan,
R. Singha,
B. Satpati,
P. Mandal
Abstract:
To probe the charge scattering mechanism in Cd$_{3}$As$_{2}$ single crystal, we have analyzed the temperature and magnetic field dependence of the Seebeck coefficient ($S$). The large saturation value of $S$ at high field clearly demonstrates the linear energy dispersion of three-dimensional Dirac fermion. A wide tunability of the charge scattering mechanism has been realized by varying the streng…
▽ More
To probe the charge scattering mechanism in Cd$_{3}$As$_{2}$ single crystal, we have analyzed the temperature and magnetic field dependence of the Seebeck coefficient ($S$). The large saturation value of $S$ at high field clearly demonstrates the linear energy dispersion of three-dimensional Dirac fermion. A wide tunability of the charge scattering mechanism has been realized by varying the strength of the magnetic field and carrier density via In doping. With the increase in magnetic field, the scattering time crosses over from being nearly energy independent to a regime of linear dependence. On the other hand, the scattering time enters into the inverse energy-dependent regime and the Fermi surface strongly modifies with 2\% In doping at Cd site. With further increase in In content from 2 to 4\%, we did not observe any Shubnikov-de Haas oscillation up to 9 T field, but the magnetoresistance is found to be quite large as in the case of undoped sample.
△ Less
Submitted 18 October, 2016; v1 submitted 8 February, 2015;
originally announced February 2015.
-
Probing the Fermi Surface of 3D Dirac Semimetal Cd$_{3}$As$_{2}$ through de Haas-van Alphen Technique
Authors:
A. Pariari,
P. Dutta,
P. Mandal
Abstract:
We have observed Shubnikov-de Haas and de Haas-van Alphen effect in the single crystals of three dimensional Dirac semimetal Cd$_{3}$As$_{2}$ upto 50 K, traceable at field as low as 2 T and 1 T, respectively. The values of Fermi wave vector, Fermi velocity, and effective cyclotron mass of charge carrier, calculated from both the techniques, are close to each other and match well with the earlier r…
▽ More
We have observed Shubnikov-de Haas and de Haas-van Alphen effect in the single crystals of three dimensional Dirac semimetal Cd$_{3}$As$_{2}$ upto 50 K, traceable at field as low as 2 T and 1 T, respectively. The values of Fermi wave vector, Fermi velocity, and effective cyclotron mass of charge carrier, calculated from both the techniques, are close to each other and match well with the earlier reports. However, the de Haas-van Alphen effect clearly reflects the existence of two different Fermi surface cross-sections along certain direction and a non-trivial Berry's phase which is the signature of 3D Dirac Fermion in Cd$_{3}$As$_{2}$.
△ Less
Submitted 4 March, 2015; v1 submitted 6 January, 2015;
originally announced January 2015.
