Showing 1–8 of 8 results for author: Padture, N P

Cracking in polymer substrates for flexible devices and its mitigation

Authors: Anush Ranka, Madhuja Layek, Sayaka Kochiyama, Cristina Lopez-Pernia, Alicia M. Chandler, Conrad A. Kocoj, Erica Magliano, Aldo Di Carlo, Francesca Brunetti, Peijun Guo, Subra Suresh, David C. Paine, Haneesh Kesari, Nitin P. Padture

Abstract: Mechanical reliability plays an outsized role in determining the durability of flexible electronic devices because of the significant mechanical stresses they can experience during manufacturing and operation. These devices are typically built on sheets comprising stiff thin-film electrodes on compliant polymer substrates, and it is generally assumed that the high-toughness substrates do not crack… ▽ More Mechanical reliability plays an outsized role in determining the durability of flexible electronic devices because of the significant mechanical stresses they can experience during manufacturing and operation. These devices are typically built on sheets comprising stiff thin-film electrodes on compliant polymer substrates, and it is generally assumed that the high-toughness substrates do not crack easily. Contrary to this widespread assumption, here we reveal severe, pervasive, and extensive cracking in the polymer substrates during bending of electrode/substrate sheets, which compromises the overall mechanical integrity of the entire device. The substrate-cracking phenomenon appears to be general, and it is driven by the amplified stress intensity factor caused by the elastic mismatch at the film/substrate interface. To mitigate this substrate cracking, an interlayer-engineering approach is designed and experimentally demonstrated. This approach is generic, and it is potentially applicable to myriad flexible electronic devices that utilize stiff films on compliant substrates, for improving their durability and reliability. △ Less

Submitted 14 April, 2025; originally announced April 2025.

Comments: 22 pages, 5 main figures, 7 supplementary figures, 2 supplementary tables, 2 supplementary notes

Elastic Modulus of Polycrystalline Halide Perovskite Thin Films on Substrates

Authors: Madhuja Layek, In Seok Yang, Zhenghong Dai, Anush Ranka, Truong Cai, Brian W. Sheldon, Eric Chason, Nitin P. Padture

Abstract: Using an innovative combination of multi-beam-optical stress-sensor (MOSS) curvature and X-ray diffraction (XRD) techniques, the Young's modulus (E) of polycrystalline MAPbI3 metal-halide perovskite (MHP) thin films attached to Si substrates is estimated to be 10.2 +/- 3.4 GPa. This is comparable to the E of corresponding MAPbI3 single-crystals. This generic method could be applied to other system… ▽ More Using an innovative combination of multi-beam-optical stress-sensor (MOSS) curvature and X-ray diffraction (XRD) techniques, the Young's modulus (E) of polycrystalline MAPbI3 metal-halide perovskite (MHP) thin films attached to Si substrates is estimated to be 10.2 +/- 3.4 GPa. This is comparable to the E of corresponding MAPbI3 single-crystals. This generic method could be applied to other systems to estimate hard-to-measure E of thin films. △ Less

Submitted 23 October, 2023; v1 submitted 13 July, 2023; originally announced July 2023.

Comments: 9 pages, 4 figures, supplementary information (1 table)

Time-resolved vibrational-pump visible-probe spectroscopy for thermal conductivity measurement of metal-halide perovskites

Authors: Shunran Li, Zhenghong Dai, Linda Li, Nitin P. Padture, Peijun Guo

Abstract: Understanding thermal transport at the micro- to nanoscale is crucially important for a wide range of technologies ranging from device thermal management and protection systems to thermal-energy regulation and harvesting. In the past decades, non-contact optical methods such as time-domain and frequency-domain thermoreflectance (TDTR and FDTR) have emerged as extremely powerful and versatile therm… ▽ More Understanding thermal transport at the micro- to nanoscale is crucially important for a wide range of technologies ranging from device thermal management and protection systems to thermal-energy regulation and harvesting. In the past decades, non-contact optical methods such as time-domain and frequency-domain thermoreflectance (TDTR and FDTR) have emerged as extremely powerful and versatile thermal metrological techniques for the measurement of material thermal conductivities. Here, we report the measurement of thermal conductivity of thin films of CH3NH3PbI3 (MAPbI3), a prototypical metal-halide perovskite, by developing a time-resolved optical technique called vibrational-pump visible-probe (VPVP) spectroscopy. The VPVP technique relies on the direct thermal excitation of MAPbI3 by femtosecond (fs) mid-infrared (MIR) optical pump pulses that are wavelength-tuned to a vibrational mode of the material, after which the time dependent optical transmittance across the visible range is probed in the ns to the us time window using a broadband pulsed laser. Using the VPVP method, we determine the thermal conductivities of MAPbI3 thin films deposited on different substrates. The transducer-free VPVP method reported here is expected to permit spectrally resolving and spatiotemporally imaging the dynamic lattice temperature variations in organic, polymeric, and hybrid organic-inorganic semiconductors. △ Less

Submitted 2 May, 2022; originally announced May 2022.

Journal ref: Rev. Sci. Instrum. 93, 053003 (2022)

Photothermally induced, reversible phase transition in methylammonium lead triiodide

Authors: Shunran Li, Zhenghong Dai, Conrad A. Kocoj, Eric I. Altman, Nitin P. Padture, Peijun Guo

Abstract: Metal halide perovskites (MHPs) are known to undergo several structural phase transitions, from lower to higher symmetry, upon heating. While structural phase transitions have been investigated by a wide range of optical, thermal and electrical methods, most measurements are quasi-static and hence do not provide direct information regarding the fundamental timescale of phase transitions in this em… ▽ More Metal halide perovskites (MHPs) are known to undergo several structural phase transitions, from lower to higher symmetry, upon heating. While structural phase transitions have been investigated by a wide range of optical, thermal and electrical methods, most measurements are quasi-static and hence do not provide direct information regarding the fundamental timescale of phase transitions in this emerging class of semiconductors. Here we investigate the timescale of the orthorhombic-to-tetragonal phase transition in the prototypical metal halide perovskite, methylammonium lead triiodide (CH3NH3PbI3 or MAPbI3) using cryogenic nanosecond transient absorption spectroscopy. By using mid-infrared pump pulses to impulsively heat up the material at slightly below the phase-transition temperature and probing the transient optical response as a function of delay time, we observed a clean signature of a transient, reversible orthorhombic-to-tetragonal phase transition. The forward phase transition is found to proceed at tens of nanoseconds timescale, after which a backward phase transition progresses at a timescale commensurate with heat dissipation from the film to the underlying substrate. A high degree of transient phase transition is observed accounting for one third of the steady-state phase transition. In comparison to fully inorganic phase-change materials such as VO2, the orders of magnitude slower phase transition in MAPbI3 can be attributed to the large energy barrier associated with the strong hydrogen bonding between the organic cation and the inorganic framework. Our approach paves the way for unraveling phase transition dynamics in MHPs and other hybrid semiconducting materials. △ Less

Submitted 4 March, 2022; v1 submitted 3 March, 2022; originally announced March 2022.

Ohmic Contact Formation Between Metal and AlGaN/GaN Heterostructure via Graphene Insertion

Authors: Pil Sung Park, Kongara M. Reddy, Digbijoy N. Nath, Zhichao Yang, Nitin P. Padture, Siddharth Rajan

Abstract: A simple method for the creation of Ohmic contact to 2-D electron gas (2DEG) in AlGaN/GaN high electron-mobility transistors (HEMTs) using Cr/Graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in the range 77 to 300 K precludes thermionic emission or trap-assisted hopping as possible carrier-transport mechanisms. It is suggested that the Cr/Graphene combin… ▽ More A simple method for the creation of Ohmic contact to 2-D electron gas (2DEG) in AlGaN/GaN high electron-mobility transistors (HEMTs) using Cr/Graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in the range 77 to 300 K precludes thermionic emission or trap-assisted hopping as possible carrier-transport mechanisms. It is suggested that the Cr/Graphene combination acts akin to a doped n-type semiconductor in contact with AlGaN/GaN heterostructure, and promotes carrier transport along percolating Al-lean paths through the AlGaN layer. This new use of graphene offers a simple and reliable method for making Ohmic contacts to AlGaN/GaN heterostructures, circumventing complex additional processing steps involving high temperatures. These results could have important implications for the fabrication and manufacturing of AlGaN/GaN-based microelectronic and optoelectronic devices/sensors of the future. △ Less

Submitted 14 February, 2013; v1 submitted 9 January, 2013; originally announced January 2013.

Comprehensive Control of Optical Polarization Anisotropy in Semiconducting Nanowires

Authors: Lei Fang, Xianwei Zhao, Yi-Hsin Chiu, Dongkyun Ko, Kongara M. Reddy, Nitin P. Padture, Fengyuan Yang, Ezekiel Johnston-Halperin

Abstract: The demonstration of strong photoluminescence polarization anisotropy in semiconducting nanowires embodies both technological promise and scientific challenge. Here we present progress on both fronts through the study of the photoluminescence polarization anisotropy of randomly oriented nanowire ensembles in materials without/with crystalline anisotropy, small/wide bandgap, and both III-V/II-VI ch… ▽ More The demonstration of strong photoluminescence polarization anisotropy in semiconducting nanowires embodies both technological promise and scientific challenge. Here we present progress on both fronts through the study of the photoluminescence polarization anisotropy of randomly oriented nanowire ensembles in materials without/with crystalline anisotropy, small/wide bandgap, and both III-V/II-VI chemistry (InP/ZnO nanowires, respectively). Comprehensive control of the polarization anisotropy is realized by dielectric matching with conformally deposited Ta2O5 (dielectric ratios of 9.6:4.41 and 4.0:4.41 for InP and ZnO, respectively). After dielectric matching, the polarization anisotropy of the nanowire ensembles is reduced by 86% for InP:Ta2O5 and 84% for ZnO:Ta2O5. △ Less

Submitted 29 July, 2011; originally announced August 2011.

Defect states and disorder in charge transport in semiconductor nanowires

Authors: Dongkyun Ko, X. W. Zhao, Kongara M. Reddy, O. D. Restrepo, R. Mishra, I. S. Beloborodov, Nandini Trivedi, Nitin P. Padture, W. Windl, F. Y. Yang, E. Johnston-Halperin

Abstract: We present a comprehensive investigation into disorder-mediated charge transport in InP nanowires in the statistical doping regime. At zero gate voltage transport is well described by the space charge limited current model and Efros-Shklovskii variable range hopping, but positive gate voltage (electron accumulation) reveals a previously unexplored regime of nanowire charge transport that is not we… ▽ More We present a comprehensive investigation into disorder-mediated charge transport in InP nanowires in the statistical doping regime. At zero gate voltage transport is well described by the space charge limited current model and Efros-Shklovskii variable range hopping, but positive gate voltage (electron accumulation) reveals a previously unexplored regime of nanowire charge transport that is not well described by existing theory. The ability to continuously tune between these regimes provides guidance for the extension of existing models and directly informs the design of next-generation nanoscale electronic devices. △ Less

Submitted 22 June, 2011; originally announced June 2011.

Comments: Main Text is 16 pages with 4 figures, Supplemental Materials is additional 6 pages with 1 figure

High Quality, Transferable Graphene Grown on Single Crystal Cu(111) Thin Films on Basal-Plane Sapphire

Authors: Kongara M. Reddy, Andrew D. Gledhill, Chun-Hu Chen, Julie M. Drexler, Nitin P. Padture

Abstract: The current method of growing large-area graphene on Cu surfaces (polycrystalline foils and thin films) and its transfer to arbitrary substrates is technologically attractive. However, the quality of graphene can be improved significantly by growing it on single-crystal Cu surfaces. Here we show that high quality, large-area graphene can be grown on epitaxial single-crystal Cu(111) thin films on r… ▽ More The current method of growing large-area graphene on Cu surfaces (polycrystalline foils and thin films) and its transfer to arbitrary substrates is technologically attractive. However, the quality of graphene can be improved significantly by growing it on single-crystal Cu surfaces. Here we show that high quality, large-area graphene can be grown on epitaxial single-crystal Cu(111) thin films on reusable basal-plane sapphire (alpha-Al2O3(0001)) substrates and then transferred to another substrate. While enabling graphene growth on Cu single-crystal surfaces, this method has the potential to avoid the high cost and extensive damage to graphene associated with sacrificing bulk single-crystal Cu during graphene transfer. △ Less

Submitted 18 March, 2011; v1 submitted 7 December, 2010; originally announced December 2010.

Comments: 10 pages, 3 figures

Journal ref: Applied Physics Letters, 98 (2011) 113117