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Measuring the Impact of Influence on Individuals: Roadmap to Quantifying Attitude
Authors:
Xiaoyun Fu,
Madhavan Rajagopal Padmanabhan,
Raj Gaurav Kumar,
Samik Basu,
Shawn Dorius,
Pavan Aduri
Abstract:
Influence diffusion has been central to the study of propagation of information in social networks, where influence is typically modeled as a binary property of entities: influenced or not influenced. We introduce the notion of attitude, which, as described in social psychology, is the degree by which an entity is influenced by the information. We present an information diffusion model that quanti…
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Influence diffusion has been central to the study of propagation of information in social networks, where influence is typically modeled as a binary property of entities: influenced or not influenced. We introduce the notion of attitude, which, as described in social psychology, is the degree by which an entity is influenced by the information. We present an information diffusion model that quantifies the degree of influence, i.e., attitude of individuals, in a social network. With this model, we formulate and study attitude maximization problem. We prove that the function for computing attitude is monotonic and sub-modular, and the attitude maximization problem is NP-Hard. We present a greedy algorithm for maximization with an approximation guarantee of $(1-1/e)$. Using the same model, we also introduce the notion of "actionable" attitude with the aim to study the scenarios where attaining individuals with high attitude is objectively more important than maximizing the attitude of the entire network. We show that the function for computing actionable attitude, unlike that for computing attitude, is non-submodular and however is \emph{approximately submodular}. We present approximation algorithm for maximizing actionable attitude in a network. We experimentally evaluated our algorithms and study empirical properties of the attitude of nodes in network such as spatial and value distribution of high attitude nodes.
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Submitted 25 October, 2020;
originally announced October 2020.
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Quasi two-dimensional magnetism in spin-$\frac{1}{2}$ square lattice compound Cu[C$_6$H$_2$(COO)$_4$][H$_3$N-(CH$_2$)$_2$-NH$_3$]$\cdot$3H$_2$O
Authors:
S. Guchhait,
S. Baby,
M. Padmanabhan,
A. Medhi,
R. Nath
Abstract:
We report the crystal growth and structural and magnetic properties of quasi two-dimensional $S=1/2$ quantum magnet Cu[C$_6$H$_2$(COO)$_4$][H$_3$N-(CH$_2$)$_2$-NH$_3$]$\cdot$3H$_2$O. It is found to crystallize in a monoclinic structure with space group $C2/m$. The CuO$_4$ plaquettes are connected into a two-dimensional framework in the $ab$-plane through the anions of [C$_6$H$_2$(COO)$_4$]$^{4-}$…
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We report the crystal growth and structural and magnetic properties of quasi two-dimensional $S=1/2$ quantum magnet Cu[C$_6$H$_2$(COO)$_4$][H$_3$N-(CH$_2$)$_2$-NH$_3$]$\cdot$3H$_2$O. It is found to crystallize in a monoclinic structure with space group $C2/m$. The CuO$_4$ plaquettes are connected into a two-dimensional framework in the $ab$-plane through the anions of [C$_6$H$_2$(COO)$_4$]$^{4-}$ (pyromellitic acid). The [H$_3$N-(CH$_2$)$_2$-NH$_3$]$^{2+}$$\cdot$3H$_2$O groups are located between the layers and provide a weak interlayer connection via hydrogen (H...O) bonds. The temperature dependent magnetic susceptibility is well described by $S=1/2$ frustrated square lattice ($J_1-J_2$) model with nearest-neighbor interaction $J_1/k_{\rm B} \simeq 5.35$ K and next-nearest-neighbor interaction $J_2/k_{\rm B} \simeq -0.01$ K. Even, our analysis using frustrated rectangular lattice ($J_{1a,b}-J_2$) model confirms almost isotropic nearest-neighbour interactions ($J_{\rm 1a}/k_{\rm B} \simeq 5.31$ K and $J_{\rm 1b}/k_{\rm B} \simeq 5.38$ K) in the $ab$-plane and $J_2/k_{\rm B}\simeq-0.24$ K. Further, the isothermal magnetization at $T=1.9$ K is also well described by a non-frustrated square lattice model with $J_1/k_{\rm B} \simeq 5.2$ K. Based on the $J_2/J_1$ ratio, the compound can be placed in the Néel antiferromagnetic state of the $J_1 - J_2$ phase diagram. No signature of magnetic long-range-order was detected down to 2 K.
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Submitted 28 August, 2020;
originally announced August 2020.
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Efficient and Secure Flash-based Gaming CAPTCH
Authors:
Monther Aldwairi,
Suaad Mohammed,
Megana Lakshmi Padmanabhan
Abstract:
With the growth of connectivity to smart grids, new applications, and the changing interaction between customer and energy clouds, clouds are more vulnerable to denial-of-service attacks. Efficient detection methods are required to authenticate, detect and control attackers. Completely Automated Public Turing test to tell Computers and Humans Apart, CAPTCHA, is one efficient tool to thwart denial…
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With the growth of connectivity to smart grids, new applications, and the changing interaction between customer and energy clouds, clouds are more vulnerable to denial-of-service attacks. Efficient detection methods are required to authenticate, detect and control attackers. Completely Automated Public Turing test to tell Computers and Humans Apart, CAPTCHA, is one efficient tool to thwart denial of service attacks. The server presents the user with a client puzzle to solve in order to gain access to the service or website. The puzzle should be hard enough for computers, but easy for humans to solve. Several methods have been suggested including the popular image-based, as well as video-based, and text-based CAPTCHAs. In this paper, we present a new Flash-based gaming CAPTCHA to differentiate bots from humans. We propose a drag and drop client puzzle where the user will play a simple game to answer a visual question. Our method turns out to be convenient, easy for users and challenging for bots. Additionally, it has gaming aspect, which makes it interesting to users of all age groups.
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Submitted 9 April, 2020;
originally announced April 2020.
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Tuning of Fermi Contour Anisotropy in GaAs (001) 2D Holes via Strain
Authors:
Insun Jo,
M. A. Mueed,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
R. Winkler,
Medini Padmanabhan,
M. Shayegan
Abstract:
We demonstrate tuning of the Fermi contour anisotropy of two-dimensional (2D) holes in a symmetric GaAs (001) quantum well via the application of in-plane strain. The ballistic transport of high-mobility hole carriers allows us to measure the Fermi wavevector of 2D holes via commensurability oscillations as a function of strain. Our results show that a small amount of in-plane strain, on the order…
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We demonstrate tuning of the Fermi contour anisotropy of two-dimensional (2D) holes in a symmetric GaAs (001) quantum well via the application of in-plane strain. The ballistic transport of high-mobility hole carriers allows us to measure the Fermi wavevector of 2D holes via commensurability oscillations as a function of strain. Our results show that a small amount of in-plane strain, on the order of $10^{-4}$, can induce significant Fermi wavevector anisotropy as large as 3.3, equivalent to a mass anisotropy of 11 in a parabolic band. Our method to tune the anisotropy \textit{in situ} provides a platform to study the role of anisotropy on phenomena such as the fractional quantum Hall effect and composite fermions in interacting 2D systems.
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Submitted 26 May, 2017;
originally announced May 2017.
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Structural and magnetic properties of spin-$1/2$ dimer compound Cu$_2$(IPA)$_2$(DMF)(H$_2$O) with a large spin gap
Authors:
S. Thamban,
U. Arjun,
M. Padmanabhan,
R. Nath
Abstract:
We present the synthesis and a detailed investigation of structural and magnetic properties of metal-organic compound Cu$_2$(IPA)$_2$(DMF)(H$_2$O) by means of x-ray diffraction, magnetization, and heat capacity measurements. Single crystals of the title compound were synthesized by judicious selection of organic ligand and employing a selective hydrothermal reaction route. It crystallizes in an or…
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We present the synthesis and a detailed investigation of structural and magnetic properties of metal-organic compound Cu$_2$(IPA)$_2$(DMF)(H$_2$O) by means of x-ray diffraction, magnetization, and heat capacity measurements. Single crystals of the title compound were synthesized by judicious selection of organic ligand and employing a selective hydrothermal reaction route. It crystallizes in an orthorhombic structure with space group $Cmca$. The structural analysis revealed that two Cu$^{2+}$ ions are held together by the organic component (-O-C-O-) in a square paddle-wheel to form spin dimers which are aligned perpendicular to each other and are further coupled through organic ligands (isophthalic acid) forming two-dimensional layers. Temperature dependent magnetic susceptibility $χ(T)$ could be described well using spin-$1/2$ dimer model. The spin susceptibility $χ_{\rm spin} (T)$ shows an exponential decrease in the low temperature region, below the broad maximum, confirming the singlet ground state with a large spin gap of $Δ/k_{\rm B} \simeq 409$~K. The heat capacity $C_{\rm p}$ measured as a function of temperature also confirms the absence of magnetic long-range-order down to 2~K.
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Submitted 17 March, 2017;
originally announced March 2017.
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Transference of Fermi Contour Anisotropy to Composite Fermions
Authors:
Insun Jo,
K. A. Villegas Rosales,
M. A. Mueed,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
R. Winkler,
Medini Padmanabhan,
M. Shayegan
Abstract:
There has been a surge of recent interest in the role of anisotropy in interaction-induced phenomena in two-dimensional (2D) charged carrier systems. A fundamental question is how an anisotropy in the energy-band structure of the carriers at zero magnetic field affects the properties of the interacting particles at high fields, in particular of the composite fermions (CFs) and the fractional quant…
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There has been a surge of recent interest in the role of anisotropy in interaction-induced phenomena in two-dimensional (2D) charged carrier systems. A fundamental question is how an anisotropy in the energy-band structure of the carriers at zero magnetic field affects the properties of the interacting particles at high fields, in particular of the composite fermions (CFs) and the fractional quantum Hall states (FQHSs). We demonstrate here tunable anisotropy for holes and hole-flux CFs confined to GaAs quantum wells, via applying \textit{in situ} in-plane strain and measuring their Fermi wavevector anisotropy through commensurability oscillations. For strains on the order of $10^{-4}$ we observe significant deformations of the shapes of the Fermi contours for both holes and CFs. The measured Fermi contour anisotropy for CFs at high magnetic field ($α_\mathrm{CF}$) is less than the anisotropy of their low-field hole (fermion) counterparts ($α_\mathrm{F}$), and closely follows the relation: $α_\mathrm{CF} = \sqrt{α_\mathrm{F}}$. The energy gap measured for the $ν= 2/3$ FQHS, on the other hand, is nearly unaffected by the Fermi contour anisotropy up to $α_\mathrm{F} \sim 3.3$, the highest anisotropy achieved in our experiments.
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Submitted 25 January, 2017; v1 submitted 23 January, 2017;
originally announced January 2017.
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Tuning of magnetic frustration in $S=1/2$ Kagomé lattices {[Cu$_{3}$(CO$_{3}$)$_{2}$$(bpe)_{3}$](ClO$_{4}$)$_2$}$_{n}$ and {[Cu$_{3}$(CO$_{3}$)$_{2}$$(bpy)_{3}$](ClO$_{4}$)$_2$}$_{n}$ through rigid and flexible ligands
Authors:
M. O. Ajeesh,
A. Yogi,
M. Padmanabhan,
R. Nath
Abstract:
Single crystalline and polycrystalline samples of $S=1/2$ Kagomé lattices {[Cu$_{3}$(CO$_{3}$)$_{2}$$(bpe)_{3}$](ClO$_{4}$)$_2$}$_{n}$ and {[Cu$_{3}$(CO$_{3}$)$_{2}$$(bpy)_{3}$](ClO$_{4}$)$_2$}$_{n}$, respectively were synthesized. Their structural and magnetic properties were characterized by means of x-ray diffraction and magnetization measurements. Both compounds crystalize in a hexagonal struc…
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Single crystalline and polycrystalline samples of $S=1/2$ Kagomé lattices {[Cu$_{3}$(CO$_{3}$)$_{2}$$(bpe)_{3}$](ClO$_{4}$)$_2$}$_{n}$ and {[Cu$_{3}$(CO$_{3}$)$_{2}$$(bpy)_{3}$](ClO$_{4}$)$_2$}$_{n}$, respectively were synthesized. Their structural and magnetic properties were characterized by means of x-ray diffraction and magnetization measurements. Both compounds crystalize in a hexagonal structure (space group $P-6$) consisting of CuO$_4$ Kagomé layers in the $ab$-plane but linked along $c$ direction through either rigid $bpy$ or flexible $bpe$ ligands to form 3D frame works. Magnetic measurements reveal that both the compounds undergo ferromagnetic ordering ($T_{\rm C}$) at low temperatures and the $T_{\rm C}$ and the extent of frustration could be tuned by changing the nature of the pillar ligands. {[Cu$_{3}$(CO$_{3}$)$_{2}$$(bpe)_{3}$](ClO$_{4}$)$_2$}$_{n}$ which is made up of flexible $bpe$ ligands has a $T_{\rm C}$ of 5.7 K and a Curie-Weiss temperature ($θ_{\rm CW}$) of -39.7 K giving rise to a frustration parameter of $\frac{|θ_{\rm CW}|}{T_{\rm C}} \simeq$ 6.96. But the replacement of $bpe$ by a more rigid and electronically delocalized $bpy$ ligand leads to an enhanced $T_{\rm C} \simeq$ 9.3 K and a reduced frustration parameter of $\frac{|θ_{\rm CW}|}{T_{\rm C}} \simeq$ 3.54.
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Submitted 18 September, 2014;
originally announced September 2014.
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Quasi-two-dimensional $S=1/2$ magnetism of Cu[C$_6$H$_2$(COO)$_4$][C$_2$H$_5$NH$_3$]$_2$
Authors:
R. Nath,
M. Padmanabhan,
S. Baby,
A. Thirumurugan,
D. Ehlers,
M. Hemmida,
H. -A. Krug von Nidda,
A. A. Tsirlin
Abstract:
We report structural and magnetic properties of the spin-$\frac12$ quantum antiferromagnet Cu[C$_6$H$_2$(COO)$_4$][C$_2$H$_5$NH$_3$]$_2$ by means of single-crystal x-ray diffraction, magnetization, heat capacity, and electron spin resonance (ESR) measurements on polycrystalline samples, as well as band-structure calculations. The triclinic crystal structure of this compound features CuO$_4$ plaque…
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We report structural and magnetic properties of the spin-$\frac12$ quantum antiferromagnet Cu[C$_6$H$_2$(COO)$_4$][C$_2$H$_5$NH$_3$]$_2$ by means of single-crystal x-ray diffraction, magnetization, heat capacity, and electron spin resonance (ESR) measurements on polycrystalline samples, as well as band-structure calculations. The triclinic crystal structure of this compound features CuO$_4$ plaquette units connected into a two-dimensional framework through anions of the pyromellitic acid [C$_6$H$_2$(COO)$_4$]$^{4-}$. The ethylamine cations [C$_2$H$_5$NH$_3]^+$ are located between the layers and act as spacers. Magnetic susceptibility and heat capacity measurements establish a quasi-two-dimensional, weakly anisotropic and non-frustrated spin-$\frac12$ square lattice with the ratio of the couplings $J_a/J_c\simeq 0.7$ along the $a$ and $c$ directions, respectively. No clear signatures of the long-range magnetic order are seen in thermodynamic measurements down to 1.8\,K. However, the gradual broadening of the ESR line suggests that magnetic ordering occurs at lower temperatures. Leading magnetic couplings are mediated by the organic anion of the pyromellitic acid and exhibit a non-trivial dependence on the Cu--Cu distance, with the stronger coupling between those Cu atoms that are further apart.
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Submitted 26 June, 2015; v1 submitted 29 July, 2014;
originally announced July 2014.
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A nearly relaxation-free opto-electronic memory from ultra-thin graphene-MoS$_2$ binary hybrids
Authors:
Kallol Roy,
Medini Padmanabhan,
Srijit Goswami,
T. Phanindra Sai,
Gopalakrishnan Ramalingam,
Srinivasan Raghavan,
Arindam Ghosh
Abstract:
Ultra-thin planar heterostructures of graphene and other two-dimensional crystals have recently attracted much interest. Very high carrier mobility in a graphene-on-boron nitride assembly is now well-established, but it has been anticipated that appropriately designed hybrids could perform other tasks as well. A heterostructure of graphene and molybdenum disulphide (MoS$_2$) is expected to be sens…
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Ultra-thin planar heterostructures of graphene and other two-dimensional crystals have recently attracted much interest. Very high carrier mobility in a graphene-on-boron nitride assembly is now well-established, but it has been anticipated that appropriately designed hybrids could perform other tasks as well. A heterostructure of graphene and molybdenum disulphide (MoS$_2$) is expected to be sensitive to photo illumination due to the optical bandgap in MoS$_2$. Despite significant advances in device architectures with both graphene and MoS$_2$, binary graphene-MoS$_2$ hybrids have not been realized so far, and the promising opto-electronic properties of such structures remain elusive. Here we demonstrate experimentally that graphene-on-MoS$_2$ binary heterostructures display an unexpected and remarkable persistent photoconductivity under illumination of white light. The photoconductivity can not only be tuned independently with both light intensity and back gate voltage, but in response to a suitable combination of light and gate voltage pulses the device functions as a re-writable optoelectronic switch or memory. The persistent, or `ON', state shows virtually no relaxation or decay within the the experimental time scales for low and moderate photoexcitation intensity, indicating a near-perfect charge retention. A microscopic model associates the persistence with strong localization of carriers in MoS$_2$. These effects are also observable at room temperature, and with chemical vapour deposited graphene, and hence are naturally scalable for large area applications.
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Submitted 5 September, 2013;
originally announced September 2013.
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Magnetization and spin dynamics of the spin S=1/2 hourglass nanomagnet Cu5(OH)2(NIPA)4*10H2O
Authors:
R. Nath,
A. A. Tsirlin,
P. Khuntia,
O. Janson,
T. Foerster,
M. Padmanabhan,
J. Li,
Yu. Skourski,
M. Baenitz,
H. Rosner,
I. Rousochatzakis
Abstract:
We report a combined experimental and theoretical study of the spin S=1/2 nanomagnet Cu5(OH)2(NIPA)4*10H2O (Cu5-NIPA). Using thermodynamic, electron spin resonance and 1H nuclear magnetic resonance measurements on one hand, and ab initio density-functional band-structure calculations, exact diagonalizations and a strong coupling theory on the other, we derive a microscopic magnetic model of Cu5-NI…
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We report a combined experimental and theoretical study of the spin S=1/2 nanomagnet Cu5(OH)2(NIPA)4*10H2O (Cu5-NIPA). Using thermodynamic, electron spin resonance and 1H nuclear magnetic resonance measurements on one hand, and ab initio density-functional band-structure calculations, exact diagonalizations and a strong coupling theory on the other, we derive a microscopic magnetic model of Cu5-NIPA and characterize the spin dynamics of this system. The elementary five-fold Cu2+ unit features an hourglass structure of two corner-sharing scalene triangles related by inversion symmetry. Our microscopic Heisenberg model comprises one ferromagnetic and two antiferromagnetic exchange couplings in each triangle, stabilizing a single spin S=1/2 doublet ground state (GS), with an exactly vanishing zero-field splitting (by Kramer's theorem), and a very large excitation gap of Δ~68 K. Thus, Cu5-NIPA is a good candidate for achieving long electronic spin relaxation (T1) and coherence (T2) times at low temperatures, in analogy to other nanomagnets with low-spin GS's. Of particular interest is the strongly inhomogeneous distribution of the GS magnetic moment over the five Cu2+ spins. This is a purely quantum-mechanical effect since, despite the non-frustrated nature of the magnetic couplings, the GS is far from the classical collinear ferrimagnetic configuration. Finally, Cu5-NIPA is a rare example of a S=1/2 nanomagnet showing an enhancement in the nuclear spin-lattice relaxation rate 1/T1 at intermediate temperatures.
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Submitted 9 April, 2013;
originally announced April 2013.
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Electrochemical integration of graphene with light absorbing copper-based thin films
Authors:
Medini Padmanabhan,
Kallol Roy,
Gopalakrishnan Ramalingam,
Srinivasan Raghavan,
Arindam Ghosh
Abstract:
We present an electrochemical route for the integration of graphene with light sensitive copper-based alloys used in optoelectronic applications. Graphene grown using chemical vapor deposition (CVD) transferred to glass is found to be a robust substrate on which photoconductive Cu_{x}S films of 1-2 um thickness can be deposited. The effect of growth parameters on the morphology and photoconductivi…
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We present an electrochemical route for the integration of graphene with light sensitive copper-based alloys used in optoelectronic applications. Graphene grown using chemical vapor deposition (CVD) transferred to glass is found to be a robust substrate on which photoconductive Cu_{x}S films of 1-2 um thickness can be deposited. The effect of growth parameters on the morphology and photoconductivity of Cu_{x}S films is presented. Current-voltage characterization and photoconductivity decay experiments are performed with graphene as one contact and silver epoxy as the other.
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Submitted 26 March, 2012;
originally announced March 2012.
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Effective Mass and Spin Susceptibility of Dilute Two-Dimensional Holes in GaAs
Authors:
YenTing Chiu,
Medini Padmanabhan,
T. Gokmen,
J. Shabani,
E. Tutuc,
M. Shayegan,
R. Winkler
Abstract:
We report effective hole mass ($m^{*}$) measurements through analyzing the temperature dependence of Shubnikov-de Haas oscillations in dilute (density $p \sim 7 \times 10^{10}$ cm$^{-2}$, $r_{s} \sim 6$) two-dimensional (2D) hole systems confined to a 20 nm-wide, (311)A GaAs quantum well. The holes in this system occupy two nearly-degenerate spin subbands whose $m^{*}$ we measure to be $\sim $ 0.2…
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We report effective hole mass ($m^{*}$) measurements through analyzing the temperature dependence of Shubnikov-de Haas oscillations in dilute (density $p \sim 7 \times 10^{10}$ cm$^{-2}$, $r_{s} \sim 6$) two-dimensional (2D) hole systems confined to a 20 nm-wide, (311)A GaAs quantum well. The holes in this system occupy two nearly-degenerate spin subbands whose $m^{*}$ we measure to be $\sim $ 0.2 (in units of the free electron mass). Despite the relatively large $r_{s}$ in our 2D system, the measured $m^{*}$ is in good agreement with the results of our energy band calculations which do not take interactions into account. We hen apply a sufficiently strong parallel magnetic field to fully depopulate one of the spin subbands, and measure $m^{*}$ for the populated subband. We find that this latter $m^{*}$ is surprisingly close to the $m^{*}$ we measure in the absence of the parallel field. We also deduce the spin susceptibility of the 2D hole system from the depopulation field, and conclude that the susceptibility is enhanced by about 50% relative to the value expected from the band calculations.
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Submitted 5 March, 2012; v1 submitted 22 June, 2011;
originally announced June 2011.
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Transference of Transport Anisotropy to Composite Fermions
Authors:
T. Gokmen,
Medini Padmanabhan,
M. Shayegan
Abstract:
When interacting two-dimensional electrons are placed in a large perpendicular magnetic field, to minimize their energy, they capture an even number of flux quanta and create new particles called composite fermions (CFs). These complex electron-flux-bound states offer an elegant explanation for the fractional quantum Hall effect. Furthermore, thanks to the flux attachment, the effective field vani…
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When interacting two-dimensional electrons are placed in a large perpendicular magnetic field, to minimize their energy, they capture an even number of flux quanta and create new particles called composite fermions (CFs). These complex electron-flux-bound states offer an elegant explanation for the fractional quantum Hall effect. Furthermore, thanks to the flux attachment, the effective field vanishes at a half-filled Landau level and CFs exhibit Fermi-liquid-like properties, similar to their zero-field electron counterparts. However, being solely influenced by interactions, CFs should possess no memory whatever of the electron parameters. Here we address a fundamental question: Does an anisotropy of the electron effective mass and Fermi surface (FS) survive composite fermionization? We measure the resistance of CFs in AlAs quantum wells where electrons occupy an elliptical FS with large eccentricity and anisotropic effective mass. Similar to their electron counterparts, CFs also exhibit anisotropic transport, suggesting an anisotropy of CF effective mass and FS.
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Submitted 28 September, 2010;
originally announced September 2010.
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Temperature dependence of piezoresistance of composite Fermions with a valley degree of freedom
Authors:
T. Gokmen,
Medini Padmanabhan,
M. Shayegan
Abstract:
We report transport measurements of composite Fermions at filling factor $ν=3/2$ in AlAs quantum wells as a function of strain and temperature. In this system the composite Fermions possess a valley degree of freedom and show piezoresistance qualitatively very similar to electrons. The temperature dependence of the resistance (R) of composite Fermions shows a metallic behavior (dR/dT > 0) for smal…
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We report transport measurements of composite Fermions at filling factor $ν=3/2$ in AlAs quantum wells as a function of strain and temperature. In this system the composite Fermions possess a valley degree of freedom and show piezoresistance qualitatively very similar to electrons. The temperature dependence of the resistance (R) of composite Fermions shows a metallic behavior (dR/dT > 0) for small values of valley polarization but turns insulating (dR/dT < 0) as they are driven to full valley polarization. The results highlight the importance of discrete degrees of freedom in the transport properties of composite Fermions and the similarity between composite Fermions and electrons.
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Submitted 15 August, 2010;
originally announced August 2010.
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Contrast between spin and valley degrees of freedom
Authors:
T. Gokmen,
Medini Padmanabhan,
M. Shayegan
Abstract:
We measure the renormalized effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we control their distribution between two spin and two valley subbands. We observe a marked contrast between the spin and valley degrees of freedom: When electrons occupy two spin subbands, m* strongly depends on the valley occupation, but not vice versa. Combining our m*…
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We measure the renormalized effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we control their distribution between two spin and two valley subbands. We observe a marked contrast between the spin and valley degrees of freedom: When electrons occupy two spin subbands, m* strongly depends on the valley occupation, but not vice versa. Combining our m* data with the measured spin and valley susceptibilities, we find that the renormalized effective Lande g-factor strongly depends on valley occupation, but the renormalized conduction-band deformation potential is nearly independent of the spin occupation.
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Submitted 15 August, 2010;
originally announced August 2010.
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Composite fermion valley polarization energies: Evidence for particle-hole asymmetry
Authors:
Medini Padmanabhan,
Tayfun Gokmen,
Mansour Shayegan
Abstract:
In an ideal two-component two-dimensional electron system, particle-hole symmetry dictates that the fractional quantum Hall states around $ν= 1/2$ are equivalent to those around $ν= 3/2$. We demonstrate that composite fermions (CFs) around $ν= 1/2$ in AlAs possess a valley degree of freedom like their counterparts around $ν= 3/2$. However, focusing on $ν= 2/3$ and 4/3, we find that the energy need…
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In an ideal two-component two-dimensional electron system, particle-hole symmetry dictates that the fractional quantum Hall states around $ν= 1/2$ are equivalent to those around $ν= 3/2$. We demonstrate that composite fermions (CFs) around $ν= 1/2$ in AlAs possess a valley degree of freedom like their counterparts around $ν= 3/2$. However, focusing on $ν= 2/3$ and 4/3, we find that the energy needed to completely valley polarize the CFs around $ν= 1/2$ is considerably smaller than the corresponding value for CFs around $ν= 3/2$ thus betraying a particle-hole symmetry breaking.
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Submitted 7 March, 2010;
originally announced March 2010.
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Ferromagnetic Fractional Quantum Hall States in a Valley-Degenerate Two-Dimensional Electron System
Authors:
Medini Padmanabhan,
T. Gokmen,
M. Shayegan
Abstract:
We study a two-dimensional electron system where the electrons occupy two conduction band valleys with anisotropic Fermi contours and strain-tunable occupation. We observe persistent quantum Hall states at filling factors $ν= 1/3$ and 5/3 even at zero strain when the two valleys are degenerate. This is reminiscent of the quantum Hall ferromagnet formed at $ν= 1$ in the same system at zero strain…
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We study a two-dimensional electron system where the electrons occupy two conduction band valleys with anisotropic Fermi contours and strain-tunable occupation. We observe persistent quantum Hall states at filling factors $ν= 1/3$ and 5/3 even at zero strain when the two valleys are degenerate. This is reminiscent of the quantum Hall ferromagnet formed at $ν= 1$ in the same system at zero strain. In the absence of a theory for a system with anisotropic valleys, we compare the energy gaps measured at $ν= 1/3$ and 5/3 to the available theory developed for single-valley, two-spin systems, and find that the gaps and their rates of rise with strain are much smaller than predicted.
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Submitted 7 January, 2010;
originally announced January 2010.
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Density dependence of valley polarization energy for composite fermions
Authors:
Medini Padmanabhan,
T. Gokmen,
M. Shayegan
Abstract:
In two-dimensional electron systems confined to wide AlAs quantum wells, composite fermions around the filling factor $ν$ = 3/2 are fully spin polarized but possess a valley degree of freedom. Here we measure the energy needed to completely valley polarize these composite fermions as a function of electron density. Comparing our results to the existing theory, we find overall good quantitative a…
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In two-dimensional electron systems confined to wide AlAs quantum wells, composite fermions around the filling factor $ν$ = 3/2 are fully spin polarized but possess a valley degree of freedom. Here we measure the energy needed to completely valley polarize these composite fermions as a function of electron density. Comparing our results to the existing theory, we find overall good quantitative agreement, but there is an unexpected trend: The measured composite fermion valley polarization energy, normalized to the Coulomb energy, decreases with decreasing density.
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Submitted 3 July, 2009; v1 submitted 2 July, 2009;
originally announced July 2009.
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Effective mass suppression upon complete spin-polarization in an isotropic two-dimensional electron system
Authors:
T. Gokmen,
Medini Padmanabhan,
K. Vakili,
E. Tutuc,
M. Shayegan
Abstract:
We measure the effective mass (m*) of interacting two-dimensional electrons confined to a 4.5 nm-wide AlAs quantum well. The electrons in this well occupy a single out-of-plane conduction band valley with an isotropic in-plane Fermi contour. When the electrons are partially spin polarized, m* is larger than its band value and increases as the density is reduced. However, as the system is driven…
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We measure the effective mass (m*) of interacting two-dimensional electrons confined to a 4.5 nm-wide AlAs quantum well. The electrons in this well occupy a single out-of-plane conduction band valley with an isotropic in-plane Fermi contour. When the electrons are partially spin polarized, m* is larger than its band value and increases as the density is reduced. However, as the system is driven to full spin-polarization via the application of a strong parallel magnetic field, m* is suppressed down to values near or even below the band mass. Our results are consistent with the previously reported measurements on wide AlAs quantum wells where the electrons occupy an in-plane valley with an anisotropic Fermi contour and effective mass, and suggest that the effective mass suppression upon complete spin polarization is a genuine property of interacting two-dimensional electrons.
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Submitted 5 May, 2009;
originally announced May 2009.
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Effective mass suppression in a ferromagnetic two-dimensional electron liquid
Authors:
Reza Asgari,
T. Gokmen,
B. Tanatar,
Medini Padmanabhan,
M. Shayegan
Abstract:
We present numerical calculations of the electron effective mass in an interacting, ferromagnetic, two-dimensional electron system. We consider quantum interaction effects associated with the charge-density fluctuation induced many-body vertex corrections. Our theory, which is free of adjustable parameters, reveals that the effective mass is suppressed (relative to its band value) in the strong…
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We present numerical calculations of the electron effective mass in an interacting, ferromagnetic, two-dimensional electron system. We consider quantum interaction effects associated with the charge-density fluctuation induced many-body vertex corrections. Our theory, which is free of adjustable parameters, reveals that the effective mass is suppressed (relative to its band value) in the strong coupling limit, in good agreement with the results of recent experimental measurements.
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Submitted 3 June, 2009; v1 submitted 19 February, 2009;
originally announced February 2009.
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Parallel Magnetic Field Tuning of Valley Splitting in AlAs Two-Dimensional Electrons
Authors:
T. Gokmen,
Medini Padmanabhan,
O. Gunawan,
Y. P. Shkolnikov,
K. Vakili,
E. P. De Poortere,
M. Shayegan
Abstract:
We demonstrate that, in a quasi-two-dimensional electron system confined to an AlAs quantum well and occupying two conduction-band minima (valleys), a parallel magnetic field can couple to the electrons' orbital motion and tune the energies of the two valleys by different amounts. The measured density imbalance between the two valleys, which is a measure of the valley susceptibility with respect…
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We demonstrate that, in a quasi-two-dimensional electron system confined to an AlAs quantum well and occupying two conduction-band minima (valleys), a parallel magnetic field can couple to the electrons' orbital motion and tune the energies of the two valleys by different amounts. The measured density imbalance between the two valleys, which is a measure of the valley susceptibility with respect to parallel magnetic field, is enhanced compared to the predictions of non-interacting calculations, reflecting the role of electron-electron interaction.
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Submitted 19 November, 2008; v1 submitted 19 November, 2008;
originally announced November 2008.
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Enhancement of valley susceptibility upon complete spin-polarization
Authors:
Medini Padmanabhan,
T. Gokmen,
M. Shayegan
Abstract:
Measurements on a two-dimensional electron system confined to an AlAs quantum well reveal that for a given electron density the valley susceptibility, defined as the change in valley population difference per unit strain, is enhanced as the system makes a transition from partial to full spin polarization. This observation is reminiscent of earlier studies in which the spin susceptibility of AlAs…
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Measurements on a two-dimensional electron system confined to an AlAs quantum well reveal that for a given electron density the valley susceptibility, defined as the change in valley population difference per unit strain, is enhanced as the system makes a transition from partial to full spin polarization. This observation is reminiscent of earlier studies in which the spin susceptibility of AlAs electrons was observed to be higher in a single-valley system than its two-valley counterpart.
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Submitted 12 October, 2008;
originally announced October 2008.
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Dependence of Effective Mass on Spin and Valley Degrees of Freedom
Authors:
T. Gokmen,
Medini Padmanabhan,
M. Shayegan
Abstract:
We measure the effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we change the conduction-band valley occupation and the spin polarization via the application of strain and magnetic field, respectively. Compared to its band value, m* is enhanced unless the electrons are fully valley and spin polarized. Incidentally, in the fully spin- and valley-…
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We measure the effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we change the conduction-band valley occupation and the spin polarization via the application of strain and magnetic field, respectively. Compared to its band value, m* is enhanced unless the electrons are fully valley and spin polarized. Incidentally, in the fully spin- and valley-polarized regime, the electron system exhibits an insulating behavior.
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Submitted 10 October, 2008;
originally announced October 2008.
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Effective mass suppression in dilute, spin-polarized two-dimensional electron systems
Authors:
Medini Padmanabhan,
T. Gokmen,
N. C. Bishop,
M. Shayegan
Abstract:
We report effective mass (m*) measurements, via analyzing the temperature dependence of the Shubnikov-de Haas oscillations, for dilute, interacting, two-dimensional electron systems (2DESs) occupying a single conduction-band valley in AlAs quantum wells. When the 2DES is partially spin-polarized, m* is larger than its band value, consistent with previous results on various 2DESs. However, as we…
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We report effective mass (m*) measurements, via analyzing the temperature dependence of the Shubnikov-de Haas oscillations, for dilute, interacting, two-dimensional electron systems (2DESs) occupying a single conduction-band valley in AlAs quantum wells. When the 2DES is partially spin-polarized, m* is larger than its band value, consistent with previous results on various 2DESs. However, as we fully spin polarize the 2DES by subjecting it to strong parallel magnetic fields, m* is unexpectedly suppressed and falls even below the band mass.
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Submitted 8 July, 2008;
originally announced July 2008.
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Spin Susceptibility of Interacting Two-dimensional Electrons with Anisotropic Effective Mass
Authors:
T. Gokmen,
Medini Padmanabhan,
E. Tutuc,
M. Shayegan,
S. De Palo,
S. Moroni,
Gaetano Senatore
Abstract:
We report measurements of the spin susceptibility in dilute (rs up to 10) AlAs two-dimensional (2D) electrons occupying a single conduction-band valley with an anisotropic in-plane Fermi contour, characterized by longitudinal and transverse effective masses, ml and mt. As the density is decreased, the spin susceptibility is significantly enhanced over its band value, reflecting the role of inter…
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We report measurements of the spin susceptibility in dilute (rs up to 10) AlAs two-dimensional (2D) electrons occupying a single conduction-band valley with an anisotropic in-plane Fermi contour, characterized by longitudinal and transverse effective masses, ml and mt. As the density is decreased, the spin susceptibility is significantly enhanced over its band value, reflecting the role of interaction. Yet the enhancement is suppressed compared to the results of quantum Monte Carlo based calculations that take the finite thickness of the electron layer into account but assume an isotropic effective mass equal to sqrt(ml.mt). Proper treatment of an interacting 2D system with an anisotropic effective mass therefore remains a theoretical challenge.
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Submitted 8 November, 2007;
originally announced November 2007.
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Valley polarization and susceptibility of composite fermions around nu=3/2
Authors:
N. C. Bishop,
M. Padmanabhan,
K. Vakili,
Y. P. Shkolnikov,
E. P. De Poortere,
M. Shayegan
Abstract:
We report magnetotransport measurements of fractional quantum Hall states in an AlAs quantum well around Landau level filling factor nu = 3/2, demonstrating that the quasiparticles are composite Fermions (CFs) with a valley degree of freedom. By monitoring the valley level crossings for these states as a function of applied symmetry-breaking strain, we determine the CF valley susceptibility and…
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We report magnetotransport measurements of fractional quantum Hall states in an AlAs quantum well around Landau level filling factor nu = 3/2, demonstrating that the quasiparticles are composite Fermions (CFs) with a valley degree of freedom. By monitoring the valley level crossings for these states as a function of applied symmetry-breaking strain, we determine the CF valley susceptibility and polarization. The data can be explained well by a simple Landau level fan diagram for CFs, and are in nearly quantitative agreement with the results reported for CF spin polarization.
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Submitted 8 June, 2007;
originally announced June 2007.
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Spin-valley phase diagram of the two-dimensional metal-insulator transition
Authors:
O. Gunawan,
T. Gokmen,
K. Vakili,
M. Padmanabhan,
E. P. De Poortere,
M. Shayegan
Abstract:
Using symmetry breaking strain to tune the valley occupation of a two-dimensional (2D) electron system in an AlAs quantum well, together with an applied in-plane magnetic field to tune the spin polarization, we independently control the system's valley and spin degrees of freedom and map out a spin-valley phase diagram for the 2D metal-insulator transition. The insulating phase occurs in the qua…
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Using symmetry breaking strain to tune the valley occupation of a two-dimensional (2D) electron system in an AlAs quantum well, together with an applied in-plane magnetic field to tune the spin polarization, we independently control the system's valley and spin degrees of freedom and map out a spin-valley phase diagram for the 2D metal-insulator transition. The insulating phase occurs in the quadrant where the system is both spin- and valley-polarized. This observation establishes the equivalent roles of spin and valley degrees of freedom in the 2D metal-insulator transition.
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Submitted 19 September, 2006;
originally announced September 2006.
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High-mobility AlAs quantum wells with out-of-plane valley occupation
Authors:
K. Vakili,
Y. P. Shkolnikov,
E. Tutuc,
E. P. De Poortere,
M. Padmanabhan,
M. Shayegan
Abstract:
Employing state-of-the-art molecular beam epitaxy techniques to grow thin, modulation-doped AlAs quantum wells, we have achieved a low temperature mobility of 5.5 m$^2$/Vs with out-of-plane occupation, an order of magnitude improvement over previous studies. However, due to the narrow well width, mobilities are still limited by scattering due to interface roughness disorder. We demonstrate the s…
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Employing state-of-the-art molecular beam epitaxy techniques to grow thin, modulation-doped AlAs quantum wells, we have achieved a low temperature mobility of 5.5 m$^2$/Vs with out-of-plane occupation, an order of magnitude improvement over previous studies. However, due to the narrow well width, mobilities are still limited by scattering due to interface roughness disorder. We demonstrate the successful implementation of a novel technique utilizing thermally-induced, biaxial, tensile strain that forces electrons to occupy the out-of-plane valley in thicker quantum wells, reducing interface roughness scattering and allowing us to achieve mobilities as high as 8.8 m$^2$/Vs.
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Submitted 2 June, 2006;
originally announced June 2006.
