Tight-binding model with sublattice-asymmetric spin-orbit coupling for square-net nodal line Dirac semimetals
Authors:
Gustavo S. Orozco-Galvan,
Amador Garcia-Fuente,
Salvador Barraza-Lopez
Abstract:
We study a 4-orbital tight-binding (TB) model for ZrSiS from the square sublattice generated by the Si atoms. After studying three other alternatives, we endow such model with a new effective spin-orbit coupling (SOC) consistent with {\em ab initio} dispersions around the Fermi energy ($E_F$) in four systematic steps: (1) We calculate the electronic dispersion of bulk ZrSiS using an implementation…
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We study a 4-orbital tight-binding (TB) model for ZrSiS from the square sublattice generated by the Si atoms. After studying three other alternatives, we endow such model with a new effective spin-orbit coupling (SOC) consistent with {\em ab initio} dispersions around the Fermi energy ($E_F$) in four systematic steps: (1) We calculate the electronic dispersion of bulk ZrSiS using an implementation of density-functional theory (DFT) based on numeric atomic orbitals [{\em J. Phys.: Condens. Matter} {\bf 14}, 2745 (2002)] in which on-site and off-site SOC can be told apart. As a result, we determine that local SOC-induced band gaps around $E_F$ are predominantly created by the on-site contribution. (2) Gradually reducing the atomic basis set size, we then create an electronic band structure with 16 orbitals per unit cell (u.c.) which retains the qualitative features of the dispersion around $E_F$, including SOC-induced band gaps. (3) Zr is the heaviest element on this compound and it has a non-negligible contribution to the electronic dispersion around $E_F$; we show that it provides the strongest contribution to the SOC-induced band gap. (4) Using Löwdin partitioning approach, we project the effect of SOC onto the 4-orbital Hamiltonian. This way, we facilitate an effective SOC interaction that was explicitly informed by {\em ab initio} input.
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Submitted 13 December, 2023; v1 submitted 6 April, 2023;
originally announced April 2023.
Thermally-driven phase transitions in freestanding low-buckled silicene, germanene, and stanene
Authors:
John M. Davis,
Gustavo S. Orozco-Galvan,
Salvador Barraza-Lopez
Abstract:
Low-buckled silicene, germanene, and stanene are group$-IV$ graphene allotropes. They form a honeycomb lattice out of two interpenetrating ($A$ and $B$) triangular sublattices that are vertically separated by a small distance $Δ_z$. The atomic numbers $Z$ of silicon, germanium, and tin are larger to carbon's ($Z_C=6$), making them the first experimentally viable two-dimensional topological insulat…
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Low-buckled silicene, germanene, and stanene are group$-IV$ graphene allotropes. They form a honeycomb lattice out of two interpenetrating ($A$ and $B$) triangular sublattices that are vertically separated by a small distance $Δ_z$. The atomic numbers $Z$ of silicon, germanium, and tin are larger to carbon's ($Z_C=6$), making them the first experimentally viable two-dimensional topological insulators. Those materials have a twice-energy-degenerate atomistic structure characterized by the buckling direction of the $B$ sublattice with respect to the $A$ sublattice [whereby the $B-$atom either protrudes {\em above} ($Δ_z>0$) or {\em below} ($Δ_z<0$) the $A-$atoms], and the consequences of that energy degeneracy on their elastic and electronic properties have not been reported thus far. Here, we uncover {\em ferroelastic, bistable} behavior on silicene, which turns into an {\em average} planar structure at about 600 K. Further, the creation of electron and hole puddles obfuscates the zero-temperature SOC induced band gaps at temperatures as low as 200 K, which may discard silicene as a viable two-dimensional topological insulator for room temperature applications. Germanene, on the other hand, never undergoes a low-buckled to planar 2D transformation, becoming amorphous at around 675 K instead, and preserving its SOC-induced bandgap despite of band broadening. Stanene undergoes a transition onto a crystalline 3D structure at about 300 K, preserving its SOC-induced electronic band gap up to that temperature. Unlike what is observed in silicene and germanene, stanene readily develops a higher-coordinated structure with a high degree of structural order. The structural phenomena is shown to have deep-reaching consequences for the electronic and vibrational properties of those two dimensional topological insulators.
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Submitted 14 March, 2023;
originally announced March 2023.
